CN1953217A - Gallium arsenide-based 1.5 micron quantum well structure and its epitaxial growth method - Google Patents
Gallium arsenide-based 1.5 micron quantum well structure and its epitaxial growth method Download PDFInfo
- Publication number
- CN1953217A CN1953217A CNA2005100866397A CN200510086639A CN1953217A CN 1953217 A CN1953217 A CN 1953217A CN A2005100866397 A CNA2005100866397 A CN A2005100866397A CN 200510086639 A CN200510086639 A CN 200510086639A CN 1953217 A CN1953217 A CN 1953217A
- Authority
- CN
- China
- Prior art keywords
- gaas
- barrier layer
- quantum well
- layer
- nanometers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention relates to a gallium arsenide-base 1.5-micrometer quantum trap structure. Wherein, it is multilayer characterized in that it comprises a GaAs transition layer; the first GaAs barrier layer on the transition layer; the first GaNAs barrier layer on the first GaAs barrier layer; one GaInNAsSb quantum trap layer on the first GaNAs barrier layer; the second GaNAs barrier layer on the GaInNAsSb quantum trap layer; the second GaAs barrier layer on the second GaNAs barrier layer; one GaAs cover layer on the second GaAs barrier layer.
Description
Technical field
The present invention relates to gallium indium nitrogen arsenic antimony (GaInNAsSb)/gallium nitrogen arsenic (GaNAs)/GaAs (GaAs) quantum well structure and the epitaxial growth method thereof of a kind of emission wavelength, be meant a kind of GaAs based 1.5 micron quantum well structure and epitaxial growth method thereof especially at 1.5 micron wavebands.
Background technology
GaAs based 1.5 micron quantum well structure is the basic structure of making 1.5 micrometer semiconductor lasers, and 1.5 micrometer semiconductor lasers are core optical devices in the trunk fiber communication system.Commercial product is InGaAsP (InGaAsP)/indium phosphide (InP) laser at present, because the refractive index difference of InGaAsP and InP is very little, to the restriction deficiency of active area charge carrier, causes laser temperature stability bad, and maximum characteristic temperature is only about 70K.Be difficult to prepare the laser of vertical cavity surface emission type simultaneously with the InGaAsP/InP material.Therefore studying Novel GaAs base near-infrared light-emitting material is the important topic in present photoelectron research and development field.Since finding that the GaInNAs quantum-well materials has the long emission wavelength characteristic, 1.5 microns GaAs based quantum well materials become long wavelength laser important research focus.Its superiority is: this quantum well system can improve device temperature characterisitic, reduce power consumption, can use simultaneously the stronger gallium aluminium arsenic (AlGaAs) of active area carrier confinement as integument and ducting layer, make the device architecture design more flexible.Also compatible mutually with GaAs base microelectronic component technology, be easy to prepare vertical cavity surface emitting laser.
The GaAs based quantum well material that how to obtain at present promptly have high-luminous-efficiency and intensity, can expand its emission wavelength to 1.5 micron waveband simultaneously again is the prerequisite condition of various devices such as preparation laser, detector.How to design quantum well structure, optimization growth parameter(s) etc. and become core technology.
Summary of the invention
The objective of the invention is to, proposed a kind of GaAs based 1.5 micron quantum well structure and epitaxial growth method thereof, can increase substantially luminous intensity, and realize doing sharp continuously the penetrating of laser room temperature of active layer with this quantum well structure.
A kind of GaAs based 1.5 of the present invention micron quantum well structure, this structure is a sandwich construction, it is characterized in that, comprising:
One GaAs transition zone;
One the one GaAs barrier layer, a GaAs barrier layer is produced on the GaAs transition zone;
One the one GaNAs barrier layer, a GaNAs barrier layer are produced on the GaAs barrier layer;
One GaInNAsSb quantum well layer, this GaInNAsSb quantum well layer are produced on the GaNAs barrier layer;
One the 2nd GaNAs barrier layer, the 2nd GaNAs barrier layer is produced on the GaInNAsSb quantum well layer;
One the 2nd GaAs barrier layer, the 2nd GaAs barrier layer are produced on the 2nd GaNAs barrier layer;
One GaAs cover layer, this GaAs cover layer is produced on the 2nd GaAs barrier layer.
Wherein the thickness of this GaAs transition zone is 300 nanometers.
Wherein the thickness of a GaAs barrier layer is 50 nanometers.
Wherein the thickness of a GaNAs barrier layer is 20 nanometers.
Wherein the thickness of this GaInNAsSb quantum well is 7 nanometers.
Thickness 20 nanometers of the 2nd GaNAs barrier layer wherein.
Wherein the thickness of this second GaAs barrier layer is 50 nanometers.
Wherein the tectal thickness of this GaAs is 100 nanometers.
The epitaxial growth method of a kind of GaAs based 1.5 of the present invention micron quantum well structure is characterized in that, comprises the steps:
Step 1: first growth GaAs transition zone, reduce after the growth temperature growth the one GaAs barrier layer on the GaAs transition zone then;
Step 2: growth the one GaNAs barrier layer on a GaAs barrier layer, the GaInNAsSb quantum well layer of growing then covers growth the 2nd GaNAs barrier layer again;
Step 3: growth the 2nd GaAs barrier layer and GaAs cover layer on the 2nd GaNAs barrier layer;
Step 4: annealing in process, finish the making of device.
Wherein the thickness of this GaAs transition zone is 300 nanometers.
Wherein the thickness of a GaAs barrier layer is 50 nanometers.
Wherein the thickness of a GaNAs barrier layer is 20 nanometers.
Wherein the thickness of this GaInNAsSb quantum well is 7 nanometers.
Thickness 20 nanometers of the 2nd GaNAs barrier layer wherein.
Wherein the thickness of this second GaAs barrier layer is 50 nanometers.
Wherein the tectal thickness of this GaAs is 100 nanometers.
Wherein said annealing in process is meant that will afterwards reduce temperature by heating up earlier implements annealing in process to quantum well.
Description of drawings
The present invention is divided into quantum well structure design and molecular beam epitaxy accretion method, and the embodiment of a quantum-well laser, comprises structural design and molecular beam epitaxial growth technology.Below in conjunction with accompanying drawing in detail the present invention is described in detail, wherein:
Fig. 1 is quantum well structure (stratiform) figure;
Fig. 2 is quantum-well laser structure (stratiform) figure;
Fig. 3 is quantum well light at room temperature fluorescence (PL) spectrogram;
Fig. 4 is quantum-well laser injection current power output (I-P) and current/voltage (I-V) performance diagram;
Fig. 5 is the sharp spectrum of penetrating of quantum well.
Embodiment
See also shown in Figure 1, a kind of GaAs based 1.5 of the present invention micron quantum well structure 10, this structure is a sandwich construction, comprising:
One GaAs transition zone 11, the thickness of this GaAs transition zone 11 are 300 nanometers, and this GaAs is layer 11 excessively, plays the effect of smooth substrate damage, smooth surface;
One the one GaAs barrier layer, 12, the one GaAs barrier layers 12 are produced on the GaAs transition zone 11, and the thickness of a GaAs barrier layer 12 is 50 nanometers, and this GaAs barrier layer 12 forms a face of the energy barrier of lower two layers;
One the one GaNAs barrier layer, 13, the one GaNAs barrier layers 13 are produced on the GaAs barrier layer 12, and the thickness of a GaNAs barrier layer 13 is 20 nanometers, and potential barrier band rank of one deck quantum well were excessive under this GaNAs barrier layer 13 constituted;
One GaInNAsSb quantum well layer 14, this GaInNAsSb quantum well layer 14 are produced on the GaNAs barrier layer 13, and the thickness of this GaInNAsSb quantum well 14 is 7 nanometers, and this GaInNAsSb quantum well layer 14 is most crucial quantum well layer;
One the 2nd GaNAs barrier layer 15, the 2nd GaNAs barrier layer 15 is produced on the GaInNAsSb quantum well layer 14, thickness 20 nanometers of the 2nd GaNAs barrier layer 15, this 2nd GaNAs barrier layer 15 is symmetrical in a GaNAs layer, and the opposite side potential barrier band rank that constitute quantum well layer are excessive;
One the 2nd GaAs barrier layer, 16, the two GaAs barrier layers 16 are produced on the 2nd GaNAs barrier layer 15, and the thickness of this second GaAs barrier layer 16 is 50 nanometers, and this 2nd GaAs barrier layer 16 is the symmetrical barrier layer of a GaAs barrier layer;
One GaAs cover layer 17, this GaAs cover layer 17 are produced on the 2nd GaAs barrier layer 16, and the thickness of this GaAs cover layer 17 is 100 nanometers, and this GaAs cover layer 17 is an isolated protective layer.
Please shown in Figure 1 in conjunction with consulting again, the epitaxial growth method of a kind of GaAs based 1.5 of the present invention micron quantum well structure comprises the steps:
Step 1: first growth GaAs transition zone 11, reduce after the growth temperature growth the one GaAs barrier layer 12 on GaAs transition zone 11 then, the thickness of this GaAs transition zone 11 is 300 nanometers, the thickness of a GaAs barrier layer 12 is 50 nanometers;
Step 2: growth the one GaNAs barrier layer 13 on a GaAs barrier layer 12, the GaInNAsSb quantum well layer 14 of growing then, cover growth the 2nd GaNAs barrier layer 15 again, the thickness of the one GaNAs barrier layer 13 is 20 nanometers, the thickness of this GaInNAsSb quantum well 14 is 7 nanometers, thickness 20 nanometers of the 2nd GaNAs barrier layer 15;
Step 3: growth the 2nd GaAs barrier layer 16 and GaAs cover layer 17 on the 2nd GaNAs barrier layer 15, the thickness of this second GaAs barrier layer 16 is 50 nanometers, the thickness of this GaAs cover layer 17 is 100 nanometers;
Step 4: annealing in process, described annealing in process is meant that will afterwards reduce temperature by heating up earlier implements annealing in process to quantum well, finishes the making of device.
Embodiment
GaAs based 1.5 micron quantum well layer structure of the present invention and molecular beam epitaxial method, as shown in Figure 1, explanatory note is as follows:
The thickness of GaAs transition zone 11 is 300 nanometers.
On the excessive layer 11 of GaAs is a GaAs barrier layer 12, and thickness is 50 nanometers.
Be a GaNAs barrier layer 13 on a GaAs barrier layer 12, thickness is 20 nanometers.
Be GaInNAsSb quantum well layer 14 on a GaNAs barrier layer 13, thickness is 7 nanometers.
Be the 2nd GaNAs barrier layer 15 on GaInNAsSb quantum well layer 14, thickness is 20 nanometers.
Be second GaAs barrier layer 16 on the 2nd GaNAs barrier layer 15, thickness is 50 nanometers.
Be GaAs cover layer 17 on the 2nd GaAs barrier layer 16, thickness is 100 nanometers.
Table 1: quantum well structure and molecular beam epitaxial growth technical parameter thereof
| The number of plies | The epitaxial loayer title | Thickness (nanometer) | Underlayer temperature (℃)/annealing temperature (℃) |
| Layer 6 | The GaAs cover layer | 100 | The 700-580 cooling, 1 minute 580-700 of 7 minutes time, 700 ℃ of annealing heats up 7 minutes time |
| Layer 6 | The 2nd GaAs barrier layer | 50 | 380-580 heats up |
| Layer 5 | The 2nd GaNAs barrier layer | 20 | 380 |
| The 4th layer | The InGaNAsSb quantum well | 7 | 380 |
| The 3rd layer | The one GaNAs barrier layer | 20 | 380 |
| The second layer | The one GaAs barrier layer | 50 | The 580-380 cooling |
| Ground floor | The GaAs transition zone | 300 | 580 |
| N+GaAs (100) substrate | |||
This table has been illustrated the thickness of each layer, contained element, underlayer temperature (growth temperature) and annealing temperature etc. according to quantum well stratiform structure.
Embodiments of the invention are to adopt a kind of laser structure of above-mentioned quantum well structure as the laser active layer, as shown in Figure 2, and the molecular beam epitaxy embodiment of this laser 20 of growing.
The GaAs transition zone is mixed Si (N type), and concentration is 3-5E+18/cm
3, thickness is 300 nanometers;
The one AlGaAs is layer 21 excessively, and the Al component increases to 50% from 0% linearity.Mix Si (N type), concentration is 1-3E+18/cm
3, thickness 50 nanometers;
The one Al
0.5Ga
0.5As ducting layer 22 is mixed Si (N type), and thickness is 1500 nanometers;
The 2nd AlGaAs is layer 23 excessively, and Al component linearity reduces to 0, mixes Si (N type), and thickness is 50 nanometers.
The one GaAs barrier layer 24, thickness 50 nanometers;
The one GaNAs barrier layer 25, thickness 20 nanometers;
GaInNAsSb quantum well 26, thickness are 7 nanometers;
The 2nd GaNAs barrier layer 27, thickness 20 nanometers;
The 2nd GaAs barrier layer 28, thickness are 50 nanometers;
The 3rd AlGaAs transition zone 29, the Al component increases from 0%-50% is linear, and thickness is 50 nanometers;
The 2nd AlGaAs ducting layer 30 is mixed Be (P type), concentration 1-3E+18/cm
3, thickness 1500 nanometers;
The 4th AlGaAs is layer 31 excessively, and the Al component reduces from the 50%-0% linearity, mixes Be (P type), and concentration is 1-3E+18/cm
3, thickness 50 nanometers;
The one GaAs contact layer 32 is mixed Be (P type), concentration 1-3E+19/cm
3, thickness 150 nanometers;
The 2nd GaAs contact layer 33 is mixed Be (P type), concentration 3-5E+19/cm
3, thickness 40 nanometers.
Embodiment 1
Table 2:1.5 micron quantum well laser structure
| The number of plies | The epitaxial loayer title | Thickness (nanometer) | Doping content/cm 3 | Underlayer temperature ℃ | Explain |
| 13 | The 2nd GaAs contact layer | 40 | p +3-5 E+19 | 580 | Mix the Be contact |
| 12 | The one GaAs contact layer | 150 | p +1-3 E+19 | 580 | Mix the Be contact |
| 11 | The 4th Al xGa 1-xAs (x=0.5 ~ 0.0) is layer excessively | 50 | p +1-3 E+18 | 580 | Al component linear change |
| 10 | The 2nd Al 0.5Ga 0.5The As ducting layer | 1500 | p +1-3 E+18 | 580 | Mix the Be waveguide |
| 9 | The 3rd Al xGa 1-xAs (x=0.0 ~ 0.5) is layer excessively | 50 | 1 minute 580-700 of 700-580 cooling 700 annealing heats up | Al component linear change | |
| The 2nd GaAs barrier layer | 50 | 380-580 heats up | Potential barrier | ||
| 8 | The 2nd GaNAs barrier layer | 20 | 380 380 380 | Potential barrier | |
| 7 | The InGaNAsSb quantum well | 7 | Quantum well | ||
| 6 | The one GaNAs barrier layer | 20 | Potential barrier | ||
| 5 | The one GaAs barrier layer | 50 | 380 | Potential barrier | |
| 4 | The 2nd Al xGa 1-xAs (x=0.5 ~ 0.0) is layer excessively | 50 | n +1-3 E+18 | The 580-380 cooling | Al component linear change |
| 3 | The one Al 0.5Ga 0.5The As ducting layer | 1500 | n +1-3 E+18 | 580 | Mix the Si waveguide |
| 2 | The one Al xGa 1-xAs (x=0.0 ~ 0.5) is layer excessively | 50 | n +1-3 E+18 | 580 | Al component linear change |
| 1 | The excessive layer of GaAs | 300 | n +3-5 E+18 | 580 | Mix the Si transition |
| N +GaAs (100) substrate | N type substrate | ||||
This table indicates component, underlayer temperature (growth temperature), the annealing temperature of each layer, doping content and type (N type or P type) etc. according to the quantum-well laser layer structure.
Adopt the epitaxial layer structure and the molecular beam epitaxial growth technical parameter of the quantum-well materials of the present invention's design, by accurate control molecular beam epitaxial growth condition, component, epitaxy layer thickness etc., can realize under the room temperature luminously greater than the high strength of 1.5 micron wavebands, its light at room temperature fluorescent line as shown in Figure 3.Its injection current-power output (I-P) characteristic and current-voltage characteristic (I-V) curve as shown in Figure 4, Fig. 5 penetrates spectral line for room temperature swashs continuously.
Claims (17)
1, a kind of GaAs based 1.5 micron quantum well structure, this structure is a sandwich construction, it is characterized in that, comprising:
One GaAs transition zone;
One the one GaAs barrier layer, a GaAs barrier layer is produced on the GaAs transition zone;
One the one GaNAs barrier layer, a GaNAs barrier layer are produced on the GaAs barrier layer;
One GaInNAsSb quantum well layer, this GaInNAsSb quantum well layer are produced on the GaNAs barrier layer;
One the 2nd GaNAs barrier layer, the 2nd GaNAs barrier layer is produced on the GaInNAsSb quantum well layer;
One the 2nd GaAs barrier layer, the 2nd GaAs barrier layer are produced on the 2nd GaNAs barrier layer;
One GaAs cover layer, this GaAs cover layer is produced on the 2nd GaAs barrier layer.
2, by the described GaAs based 1.5 of claim 1 micron quantum well structure, it is characterized in that wherein the thickness of this GaAs transition zone is 300 nanometers.
3, by the described GaAs based 1.5 of claim 1 micron quantum well structure, it is characterized in that wherein the thickness of a GaAs barrier layer is 50 nanometers.
4, by the described GaAs based 1.5 of claim 1 micron quantum well structure, it is characterized in that wherein the thickness of a GaNAs barrier layer is 20 nanometers.
5, by the described GaAs based 1.5 of claim 1 micron quantum well structure, it is characterized in that wherein the thickness of this GaInNAsSb quantum well is 7 nanometers.
6, by the described GaAs based 1.5 of claim 1 micron quantum well structure, it is characterized in that, wherein thickness 20 nanometers of the 2nd GaNAs barrier layer.
7, by the described GaAs based 1.5 of claim 1 micron quantum well structure, it is characterized in that wherein the thickness of this second GaAs barrier layer is 50 nanometers.
8, by the described GaAs based 1.5 of claim 1 micron quantum well structure, it is characterized in that wherein the tectal thickness of this GaAs is 100 nanometers.
9, a kind of epitaxial growth method of GaAs based 1.5 micron quantum well structure is characterized in that, comprises the steps:
Step 1: first growth GaAs transition zone, reduce after the growth temperature growth the one GaAs barrier layer on the GaAs transition zone then;
Step 2: growth the one GaNAs barrier layer on a GaAs barrier layer, the GaInNAsSb quantum well layer of growing then covers growth the 2nd GaNAs barrier layer again;
Step 3: growth the 2nd GaAs barrier layer and GaAs cover layer on the 2nd GaNAs barrier layer;
Step 4: annealing in process, finish the making of device.
10, by the epitaxial growth method of the described GaAs based 1.5 of claim 9 micron quantum well structure, it is characterized in that wherein the thickness of this GaAs transition zone is 300 nanometers.
11, by the epitaxial growth method of the described GaAs based 1.5 of claim 9 micron quantum well structure, it is characterized in that wherein the thickness of a GaAs barrier layer is 50 nanometers.
12, by the epitaxial growth method of the described GaAs based 1.5 of claim 9 micron quantum well structure, it is characterized in that wherein the thickness of a GaNAs barrier layer is 20 nanometers.
13, by the epitaxial growth method of the described GaAs based 1.5 of claim 9 micron quantum well structure, it is characterized in that wherein the thickness of this GaInNAsSb quantum well is 7 nanometers.
14, by the epitaxial growth method of the described GaAs based 1.5 of claim 9 micron quantum well structure, it is characterized in that, wherein thickness 20 nanometers of the 2nd GaNAs barrier layer.
15, by the epitaxial growth method of the described GaAs based 1.5 of claim 9 micron quantum well structure, it is characterized in that wherein the thickness of this second GaAs barrier layer is 50 nanometers.
16, by the epitaxial growth method of the described GaAs based 1.5 of claim 9 micron quantum well structure, it is characterized in that wherein the tectal thickness of this GaAs is 100 nanometers.
By the epitaxial growth method of the described GaAs based 1.5 of claim 9 micron quantum well structure, it is characterized in that 17, wherein said annealing in process is meant that will afterwards reduce temperature by heating up earlier implements annealing in process to quantum well.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100866397A CN100382347C (en) | 2005-10-20 | 2005-10-20 | Gallium arsenide-based 1.5 micron quantum well structure and its epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100866397A CN100382347C (en) | 2005-10-20 | 2005-10-20 | Gallium arsenide-based 1.5 micron quantum well structure and its epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1953217A true CN1953217A (en) | 2007-04-25 |
| CN100382347C CN100382347C (en) | 2008-04-16 |
Family
ID=38059424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100866397A Expired - Fee Related CN100382347C (en) | 2005-10-20 | 2005-10-20 | Gallium arsenide-based 1.5 micron quantum well structure and its epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100382347C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103368074A (en) * | 2013-07-18 | 2013-10-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor laser active area, semiconductor laser and manufacturing method thereof |
| LT6045B (en) | 2013-09-26 | 2014-06-25 | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | Semiconductor saturable absorber mirror |
| WO2015143902A1 (en) * | 2014-03-24 | 2015-10-01 | 厦门市三安光电科技有限公司 | Multi-quantum well structure and light-emitting diode using same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4095306B2 (en) * | 2002-01-18 | 2008-06-04 | 株式会社リコー | Semiconductor light emitting device, manufacturing method thereof, and optical transmission system |
| JP2004296845A (en) * | 2003-03-27 | 2004-10-21 | Ricoh Co Ltd | Quantum well structure, semiconductor light emitting element, optical transmitting module, and optical transmission system |
| JP2004207380A (en) * | 2002-12-24 | 2004-07-22 | Furukawa Electric Co Ltd:The | Surface emitting laser element, transceiver, optical transceiver, and optical communication system using the same |
| JP4617684B2 (en) * | 2004-02-24 | 2011-01-26 | ソニー株式会社 | Semiconductor laser element |
-
2005
- 2005-10-20 CN CNB2005100866397A patent/CN100382347C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103368074A (en) * | 2013-07-18 | 2013-10-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor laser active area, semiconductor laser and manufacturing method thereof |
| CN103368074B (en) * | 2013-07-18 | 2015-12-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor laser active area, semiconductor laser and preparation method thereof |
| LT6045B (en) | 2013-09-26 | 2014-06-25 | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | Semiconductor saturable absorber mirror |
| WO2015143902A1 (en) * | 2014-03-24 | 2015-10-01 | 厦门市三安光电科技有限公司 | Multi-quantum well structure and light-emitting diode using same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100382347C (en) | 2008-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Campbell et al. | Recent advances in avalanche photodiodes | |
| US9513436B2 (en) | Semiconductor device | |
| Wei et al. | InAs/GaAs quantum dot narrow ridge lasers epitaxially grown on SOI substrates for silicon photonic integration | |
| CN1780004A (en) | Vertical cavity photoelectric device containing tunnel junction | |
| CN108666867B (en) | Laser for outputting hollow light beam and manufacturing method thereof | |
| US5608753A (en) | Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material | |
| CN100382347C (en) | Gallium arsenide-based 1.5 micron quantum well structure and its epitaxial growth method | |
| Duan et al. | Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes | |
| Yuan et al. | A buried ridge stripe structure InGaAsP-Si hybrid laser | |
| US9755403B2 (en) | Controlling the emission wavelength in group III-V semiconductor laser diodes | |
| JP2003519438A (en) | Radiation source | |
| US7049641B2 (en) | Use of deep-level transitions in semiconductor devices | |
| Qiao et al. | Monolithic fabrication of InGaAs/GaAs/AlGaAs multiple wavelength quantum well laser diodes via impurity-free vacancy disordering quantum well intermixing | |
| US20040013146A1 (en) | Laser diode with a low absorption diode junction | |
| Camacho-Aguilera et al. | Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers | |
| Todaro et al. | 1.31 μ m InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemical-vapor deposition | |
| US20060226440A1 (en) | Use of deep-level transitions in semiconductor devices | |
| Carrington et al. | Midinfrared InAsSbN/InAs Multiquantum Well Light‐Emitting Diodes | |
| US20210408324A1 (en) | Enhanced room temperature mid-ir leds with integrated semiconductor 'metals' | |
| CN1786107A (en) | 1.3 micron high density guantum point structure and its preparation method | |
| Lu et al. | Mid-infrared interband cascade light-emitting diodes with InAs/GaAsSb superlattices on InAs substrates | |
| Sun et al. | Optimal Design of High-Speed Electro-Absorption Modulated Laser Based on Double Stack Active Layer Structure | |
| Hatzopoulos et al. | Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding | |
| Snyman et al. | Increasing the efficiency of p+ np+ injection-avalanche Si CMOS LEDs (450nm–750nm) by means of depletion layer profiling and reach-through techniques | |
| JPH04199587A (en) | Optical semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080416 Termination date: 20091120 |