CN1949456A - Composite chemically mechanical polishing method - Google Patents
Composite chemically mechanical polishing method Download PDFInfo
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- CN1949456A CN1949456A CN 200510113717 CN200510113717A CN1949456A CN 1949456 A CN1949456 A CN 1949456A CN 200510113717 CN200510113717 CN 200510113717 CN 200510113717 A CN200510113717 A CN 200510113717A CN 1949456 A CN1949456 A CN 1949456A
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Abstract
The invention is a combined chemical-mechanical polishing method, firstly primarily polishing a to-be-flattened layer by first polishing disc in the first polisher platform; successively further polishing the layer by second polishing disc in the second polisher platform; and finally polishing the layer by third polishing disc in the same machine platform.
Description
Technical field
The present invention relates to the manufacture method of a kind of chemical mechanical polishing method and semiconductor structure, relate in particular to the manufacture method of a kind of composite chemically mechanical polishing method and shallow slot isolation structure and intraconnections.
Background technology
In semiconductor process techniques, flattening surface is an important technology handling the high density photoetching, because the flat surfaces that does not have height to rise and fall causes scattering in the time of can avoiding exposing, to reach accurate design transfer (pattern transer).Chemical mechanical polishing method uniquely can provide large scale integrated circuit (very-large scale integration for present, VLSI), even very lagre scale integrated circuit (VLSIC) (ultra-large scale integration, ULSI) a kind of technology of technology " comprehensive planarization (global planarization) ", therefore, the flatening process of wafer all is to finish with CMP (Chemical Mechanical Polishing) process at present.
(fixed abrasive CMP, FACMP) board is the normal at present chemical-mechanical polishing mathing platform that uses in fixed abrasive grains chemico-mechanical polishing.In fixed abrasive grains chemical-mechanical polishing mathing platform, have two polishing disks; mechanical arm will treat that earlier flatness layer places on the polishing disk that has than the rough polishing particle; carry out preliminary polishing, and then this is treated that flatness layer places another polishing disk that has than the fine polishing particle further to polish.Though it is preferable with the effect that fixed abrasive grains chemical-mechanical polishing mathing platform carries out flatening process; but because board by comparison with general free-standing abrasive grains chemico-mechanical polishing (non-fixedabrasive CMP); polishing speed is slower; per hour production capacity is only 8; and fixed abrasive grains chemical-mechanical polishing mathing playscript with stage directions body with and the consumptive material price very expensive, thereby expended a large amount of production costs.
Summary of the invention
The purpose of this invention is to provide a kind of composite chemically mechanical polishing method; utilization is carried out flatening process in conjunction with free-standing abrasive grains chemical-mechanical polishing mathing platform and fixed abrasive grains chemical-mechanical polishing mathing platform; can increase work efficiency, and then improve production capacity, and reduce production costs.
Another object of the present invention provides a kind of manufacture method of shallow slot isolation structure,, can increase work efficiency and increases production capacity the insulating barrier planarization with fixed abrasive grains chemical-mechanical polishing mathing platform and free-standing abrasive grains chemical-mechanical polishing mathing platform.
A further object of the present invention provides a kind of manufacture method of intraconnections, with fixed abrasive grains chemical-mechanical polishing mathing platform and free-standing abrasive grains chemical-mechanical polishing mathing platform conductor layer is polished, and improves output to increase operating efficiency.
The present invention proposes a kind of composite chemically mechanical polishing method, and it is first in first polishing machine platform, treats flatness layer with first polishing disk and carries out a tentatively polishing.Then, in second polishing machine platform, treat flatness layer and carry out a polishing step.Wherein, above-mentioned first polishing machine platform and second polishing machine platform are inequality.This polishing step is to treat flatness layer with second polishing disk earlier to polish.Then, in same board, treat flatness layer with the 3rd polishing disk and polish.
According to the described composite chemically mechanical polishing method of the embodiment of the invention, the first above-mentioned polishing machine platform is a free-standing abrasive grains chemical-mechanical polishing mathing platform.
According to the described composite chemically mechanical polishing method of the embodiment of the invention, the second above-mentioned polishing machine platform is fixed abrasive grains chemical-mechanical polishing mathing platform.
According to the described composite chemically mechanical polishing method of the embodiment of the invention, the polishing speed of the first above-mentioned polishing disk is greater than the polishing speed of second polishing disk and the 3rd polishing disk.
According to the described composite chemically mechanical polishing method of the embodiment of the invention, the polishing speed of the second above-mentioned polishing disk equates in fact with the polishing speed of the 3rd polishing disk.
The present invention also proposes a kind of manufacture method of shallow slot isolation structure, and it is that a substrate is provided earlier.Then, on substrate, form the hard mask layer of patterning.Then, be mask with the hard mask layer of patterning, in substrate, form irrigation canals and ditches.Next, on the hard mask layer of patterning and in the irrigation canals and ditches, form insulating barrier.Afterwards, in first polishing machine platform, insulating barrier is carried out a preliminary polishing step with first polishing disk.Then, in second polishing machine platform, insulating barrier is carried out a polishing step.Above-mentioned first polishing machine platform and second polishing machine platform are inequality.This polishing step is with second polishing disk insulating barrier to be polished earlier, then, in same board, with the 3rd polishing disk insulating barrier is polished, with the insulating barrier on the hard mask layer of removing patterning.Afterwards, remove the hard mask layer of patterning.
According to the manufacture method of the described shallow slot isolation structure of the embodiment of the invention, the first above-mentioned polishing machine platform is a free-standing abrasive grains chemical-mechanical polishing mathing platform.
According to the manufacture method of the described shallow slot isolation structure of the embodiment of the invention, the second above-mentioned polishing machine platform is fixed abrasive grains chemical-mechanical polishing mathing platform.
According to the manufacture method of the described shallow slot isolation structure of the embodiment of the invention, the polishing speed of the first above-mentioned polishing disk is greater than the polishing speed of second polishing disk and the 3rd polishing disk.
According to the manufacture method of the described shallow slot isolation structure of the embodiment of the invention, the polishing speed of the second above-mentioned polishing disk equates in fact with the polishing speed of the 3rd polishing disk.
According to the manufacture method of the described shallow slot isolation structure of the embodiment of the invention, the above-mentioned employed abrasive grains of first polishing machine platform comprises silicon dioxide (SiO
2), and the employed abrasive grains of second polishing machine platform comprises ceria (CeO
2).According to the manufacture method of the described shallow slot isolation structure of the embodiment of the invention, the material of the hard mask layer of above-mentioned patterning is a silicon nitride.
The present invention reintroduces a kind of manufacture method of intraconnections, and it is that a substrate is provided earlier.Then, on substrate, form dielectric layer.Then, in dielectric layer, form opening.Next, in opening with on the dielectric layer, form conductor layer.Afterwards, in first polishing machine platform, conductor layer is tentatively polished with first polishing disk.Then, with first polishing machine platform, second polishing machine platform inequality in conductor layer is carried out polishing step.This polishing step is with second polishing disk conductor layer to be polished earlier, then, in same board, with the 3rd polishing disk conductor layer is polished, to remove the conductor layer on the dielectric layer.
According to the manufacture method of the described intraconnections of the embodiment of the invention, the first above-mentioned polishing machine platform is a free-standing abrasive grains chemical-mechanical polishing mathing platform.
According to the manufacture method of the described intraconnections of the embodiment of the invention, the second above-mentioned polishing machine platform is fixed abrasive grains chemical-mechanical polishing mathing platform.
According to the manufacture method of the described intraconnections of the embodiment of the invention, the polishing speed of the first above-mentioned polishing disk is greater than the polishing speed of second polishing disk and the 3rd polishing disk.
According to the manufacture method of the described intraconnections of the embodiment of the invention, the polishing speed of the second above-mentioned polishing disk equates in fact with the polishing speed of the 3rd polishing disk.
According to the manufacture method of the described intraconnections of the embodiment of the invention, above-mentioned conductor layer is a metal level.
According to the manufacture method of the described intraconnections of the embodiment of the invention, the material of above-mentioned metal level is a copper.
The present invention is when carrying out CMP (Chemical Mechanical Polishing) process; utilize free-standing abrasive grains chemical-mechanical polishing mathing platform apace polished layer to be carried out preliminary polishing earlier; utilize fixed abrasive grains chemical-mechanical polishing mathing platform further to polish again; and the polishing speed of two polishing disks in the fixed abrasive grains chemical-mechanical polishing mathing platform is identical in fact; therefore with the flatening process that composite chemically mechanical polishing method of the present invention was carried out, its uniformity is higher.In addition, the present invention adopts free-standing abrasive grains chemical-mechanical polishing mathing platform to carry out chemico-mechanical polishing in conjunction with fixed abrasive grains chemical-mechanical polishing mathing platform, has preferable operating efficiency, and then can increase production capacity.And, because free-standing abrasive grains chemical-mechanical polishing mathing playscript with stage directions body and consumptive material price thereof are lower, more can reduce production costs.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the flow chart of steps according to the composite chemically mechanical polishing method that the embodiment of the invention illustrated;
Fig. 2 A to Fig. 2 E is the flow process profile according to the manufacture method of the shallow slot isolation structure that the embodiment of the invention illustrated;
Fig. 3 A to Fig. 3 D is the flow process profile according to the manufacture method of the intraconnections that the embodiment of the invention illustrated.
The main element symbol description
100～104: step
200,300: substrate
202: the hard mask layer of patterning
204: irrigation canals and ditches
206,206a, 206b: insulating barrier
208: shallow slot isolation structure
302: dielectric layer
304: opening
306,306a, 306b: conductor layer
308: metal interconnecting
Embodiment
Fig. 1 is the flow chart of steps according to the composite chemically mechanical polishing method that the embodiment of the invention illustrated.Please refer to Fig. 1, at first, in step 100, in first polishing machine platform, treat flatness layer and carry out a preliminary polishing step.Wherein, first polishing machine platform is a free-standing abrasive grains chemical-mechanical polishing mathing platform, and polishing disk can be single-deck or polydisc.This board is fit to be used for carry out preliminary planarization, and this board itself and its consumptive material such as abrasive grains etc., and price is lower, can reduce production costs.
Then, the flatness layer for the treatment of that finishes preliminary planarization is taken out, place second polishing machine platform.This second polishing machine platform and above-mentioned first polishing machine platform are inequality, and it for example is fixed abrasive grains chemical-mechanical polishing mathing platform, and polishing disk is a polydisc, for example is four dishes.In step 102, in second polishing machine platform, earlier treating flatness layer with a polishing disk further polishes, the polishing speed of this polishing disk is lower than the polishing speed of the polishing disk in first polishing machine platform, but the uniformity behind the polished layer of its polishing is higher than the polishor of polishing disk institute in first polishing machine platform.
Then, in step 104, similarly in second board, will treat that flatness layer places on another polishing disk, treats flatness layer with this polishing disk and polishes.In second board, the polishing speed of two polishing disks is equal in fact, and the polishing speed of representing the two is in certain limit.
What deserves to be mentioned is, when carrying out preliminary polishing, because lower for the requirement of the uniformity, use polishing velocity very fast, and the lower free-standing abrasive grains chemical-mechanical polishing mathing platform of the price of board own, can reduce production costs.Afterwards; when further polishing; then use fixed abrasive grains chemical-mechanical polishing mathing platform; because two polishing disk polishing speeds in this board about equally; therefore polish simultaneously with this two polishing disk, but speed production speed, and then improve prouctiveness; and the polishing uniformity of this board is preferable, has also promoted product quality simultaneously.Following examples are to make shallow slot isolation structure and intraconnections with composite chemically mechanical polishing method of the present invention.
Fig. 2 A to Fig. 2 E is the flow process profile according to the manufacture method of the shallow slot isolation structure that the embodiment of the invention illustrated.Please refer to Fig. 2 A, at first, provide a substrate 200, on the substrate 200 the hard mask layer 202 with patterning define irrigation canals and ditches 204, and in and hard mask layer 202 at patterning on and formed insulating barrier 206 in the irrigation canals and ditches 204, the material of insulating barrier 206 for example is a silicon dioxide.In addition, the material of the hard mask layer of patterning for example is a silicon nitride.
Then, please refer to Fig. 2 B, in first polishing machine platform, insulating barrier 206 is carried out preliminary polishing, form insulating barrier 206a to remove the part that height rises and falls in the insulating barrier 206.First polishing machine platform is a free-standing abrasive grains chemical-mechanical polishing mathing platform, and polishing disk can be single-deck or polydisc.In one example, employed abrasive grains is a silicon dioxide, and the polishing speed for the treatment of flatness layer on the polishing disk for example is 3500 /min.
Next, please refer to Fig. 2 C, wafer is taken out, place second polishing machine platform inequality, insulating barrier 206a is polished further, to form insulating barrier 206b with a polishing disk with first polishing machine platform.Second polishing machine platform is fixed abrasive grains chemical-mechanical polishing mathing platform, and polishing disk is a polydisc, for example is four dishes.
Afterwards, please refer to Fig. 2 D, in same board, insulating barrier 206b is polished, form shallow slot isolation structure 208 with the insulating barrier 206b on the hard mask layer 202 of removing patterning with another polishing disk.The polishing speed of two polishing disks is equal in fact, and the polishing speed of representing the two is in certain limit, and all less than first polishing disk.In one example, employed abrasive grains is a ceria, and its polishing speed for example is between 50 /min to 1500 /min, more preferably between 200 /min to 800 /min.Use abrasive grains to be ceria, with general silicon dioxide abrasive grains by comparison, have higher polishing for insulating barrier and select ratio, and be 3% through the unevenness after the polishing, be good also than the unevenness 6% after general abrasive grains polishing.Afterwards, please refer to Fig. 2 E, remove the hard mask layer 202 of patterning.
Below will carry out the making of intraconnections with described board of the foregoing description and method.
Fig. 3 A to Fig. 3 D is the flow process profile according to the manufacture method of the intraconnections that the embodiment of the invention illustrated.Please refer to Fig. 3 A, at first, provide a substrate 300.Then, on substrate 300, form dielectric layer 302.Then, in dielectric layer 302, form opening 304.Next, in opening 304 with on the dielectric layer 302, form conductor layer 306.Wherein, conductor layer 306 for example is a metal level, and its material for example is a copper.
Then, please refer to Fig. 3 B, in first polishing machine platform, conductor layer 306 is carried out preliminary polishing, form conductor layer 306a to remove the part that height rises and falls in the conductor layer 306.Next, please refer to Fig. 3 C, conductor layer 306a is taken out, place second polishing machine platform inequality, conductor layer 306a is polished further, to form conductor layer 306b with a polishing disk with first polishing machine platform.Afterwards, please refer to Fig. 3 D, in same board, conductor layer 306b is polished, form metal interconnecting 308 to remove the conductor layer 306b on the dielectric layer 302 with another polishing disk.
In sum; the present invention is when carrying out flatening process; utilize more cheap free-standing abrasive grains chemical-mechanical polishing mathing platform apace polished layer to be carried out preliminary polishing earlier; utilize the preferable fixed abrasive grains chemical-mechanical polishing mathing platform of the uniformity further to polish again, so the uniformity is higher.In addition, free-standing abrasive grains chemical-mechanical polishing mathing platform is carried out flatening process in conjunction with fixed abrasive grains chemical-mechanical polishing mathing platform, can reach per hour 18 production capacity.And, because free-standing abrasive grains chemical-mechanical polishing mathing playscript with stage directions body and consumptive material price thereof are lower, more can reduce production costs.
Though the present invention discloses as above with embodiment; right its is not in order to qualification the present invention, any those skilled in the art, under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (19)
1. composite chemically mechanical polishing method comprises:
In one first polishing machine platform, treat that to one flatness layer carries out a preliminary polishing step with one first polishing disk; And
In one second polishing machine platform this is treated that flatness layer carries out a polishing step, wherein this first polishing machine platform and this second polishing machine platform are inequality, and this polishing step comprises:
With one second polishing disk this is treated that flatness layer polishes; And
With one the 3rd polishing disk this is treated that flatness layer polishes.
2. composite chemically mechanical polishing method as claimed in claim 1, wherein this first polishing machine platform is a free-standing abrasive grains chemical-mechanical polishing mathing platform.
3. composite chemically mechanical polishing method as claimed in claim 1, wherein this second polishing machine platform is fixed abrasive grains chemical-mechanical polishing mathing platform.
4. composite chemically mechanical polishing method as claimed in claim 1, wherein the polishing speed of this first polishing disk is greater than the polishing speed of this second polishing disk and the 3rd polishing disk.
5. composite chemically mechanical polishing method as claimed in claim 1, wherein the polishing speed of this second polishing disk equates in fact with the polishing speed of the 3rd polishing disk.
6. the manufacture method of a shallow slot isolation structure comprises:
One substrate is provided;
On this substrate, form the hard mask layer of a patterning;
Hard mask layer with this patterning forms irrigation canals and ditches for being masked in this substrate;
Form an insulating barrier on the hard mask layer of this patterning and in these irrigation canals and ditches;
In one first polishing machine platform, this insulating barrier is carried out a preliminary polishing step with one first polishing disk;
In one second polishing machine platform this insulating barrier is carried out a polishing step, wherein this first polishing machine platform and this second polishing machine platform are inequality, and this polishing step comprises:
With one second polishing disk this insulating barrier is polished; And
With one the 3rd polishing disk this insulating barrier is polished, with this insulating barrier on the hard mask layer of removing this patterning; And
Remove the hard mask layer of this patterning.
7. the manufacture method of shallow slot isolation structure as claimed in claim 6, wherein this first polishing machine platform is a free-standing abrasive grains chemical-mechanical polishing mathing platform.
8. the manufacture method of shallow slot isolation structure as claimed in claim 6, wherein this second polishing machine platform is fixed abrasive grains chemical-mechanical polishing mathing platform.
9. the manufacture method of shallow slot isolation structure as claimed in claim 6, wherein the polishing speed of this first polishing disk is greater than the polishing speed of this second polishing disk and the 3rd polishing disk.
10. the manufacture method of shallow slot isolation structure as claimed in claim 6, wherein the polishing speed of this second polishing disk equates in fact with the polishing speed of the 3rd polishing disk.
11. the manufacture method of shallow slot isolation structure as claimed in claim 6, wherein the employed abrasive grains of this first polishing machine platform comprises silicon dioxide, and the employed abrasive grains of this second polishing machine platform comprises ceria.
12. the manufacture method of shallow slot isolation structure as claimed in claim 6, wherein the material of the hard mask layer of this patterning comprises silicon nitride.
13. the manufacture method of an intraconnections comprises:
One substrate is provided;
On this substrate, form a dielectric layer;
In this dielectric layer, form an opening;
In this opening with on this dielectric layer, form a conductor layer;
In one first polishing machine platform, this conductor layer is polished with one first polishing disk; And
In one second polishing machine platform this conductor layer is carried out a polishing step, wherein this first polishing machine platform and this second polishing machine platform are inequality, and this polishing step comprises:
With one second polishing disk this conductor layer is polished; And
With one the 3rd polishing disk this conductor layer is polished, to remove this conductor layer on this dielectric layer.
14. the manufacture method of intraconnections as claimed in claim 13, wherein this first polishing machine platform is a free-standing abrasive grains chemical-mechanical polishing mathing platform.
15. the manufacture method of intraconnections as claimed in claim 13, wherein this second polishing machine platform is fixed abrasive grains chemical-mechanical polishing mathing platform.
16. the manufacture method of intraconnections as claimed in claim 13, wherein the polishing speed of this first polishing disk is greater than the polishing speed of this second polishing disk and the 3rd polishing disk.
17. the manufacture method of intraconnections as claimed in claim 13, wherein the polishing speed of this second polishing disk equates in fact with the polishing speed of the 3rd polishing disk.
18. the manufacture method of intraconnections as claimed in claim 13, wherein this conductor layer comprises a metal level.
19. the manufacture method of intraconnections as claimed in claim 18, wherein the material of this metal level comprises copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101137178A CN100414666C (en) | 2005-10-14 | 2005-10-14 | Composite chemically mechanical polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101137178A CN100414666C (en) | 2005-10-14 | 2005-10-14 | Composite chemically mechanical polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1949456A true CN1949456A (en) | 2007-04-18 |
| CN100414666C CN100414666C (en) | 2008-08-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101137178A Expired - Fee Related CN100414666C (en) | 2005-10-14 | 2005-10-14 | Composite chemically mechanical polishing method |
Country Status (1)
| Country | Link |
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| CN (1) | CN100414666C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102079063A (en) * | 2009-12-01 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | Chemical and mechanical grinding method |
| CN104175211A (en) * | 2014-08-20 | 2014-12-03 | 上海华力微电子有限公司 | Grinding method capable of preventing microcosmic scratches during chemical mechanical grinding |
| CN107398779A (en) * | 2016-05-18 | 2017-11-28 | 上海新昇半导体科技有限公司 | A kind of final polishing method of wafer |
| CN110303419A (en) * | 2019-08-05 | 2019-10-08 | 西安奕斯伟硅片技术有限公司 | A kind of polissoir and method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6573173B2 (en) * | 1999-07-13 | 2003-06-03 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
| US7041599B1 (en) * | 1999-12-21 | 2006-05-09 | Applied Materials Inc. | High through-put Cu CMP with significantly reduced erosion and dishing |
| US6589099B2 (en) * | 2001-07-09 | 2003-07-08 | Motorola, Inc. | Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry |
| US20040235398A1 (en) * | 2003-05-08 | 2004-11-25 | Thornton Brian S. | Chemical mechanical planarization method and apparatus for improved process uniformity, reduced topography and reduced defects |
-
2005
- 2005-10-14 CN CNB2005101137178A patent/CN100414666C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102079063A (en) * | 2009-12-01 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | Chemical and mechanical grinding method |
| CN102079063B (en) * | 2009-12-01 | 2013-09-18 | 中芯国际集成电路制造(上海)有限公司 | Chemical and mechanical grinding method |
| CN104175211A (en) * | 2014-08-20 | 2014-12-03 | 上海华力微电子有限公司 | Grinding method capable of preventing microcosmic scratches during chemical mechanical grinding |
| CN107398779A (en) * | 2016-05-18 | 2017-11-28 | 上海新昇半导体科技有限公司 | A kind of final polishing method of wafer |
| CN110303419A (en) * | 2019-08-05 | 2019-10-08 | 西安奕斯伟硅片技术有限公司 | A kind of polissoir and method |
| CN110303419B (en) * | 2019-08-05 | 2021-06-22 | 西安奕斯伟硅片技术有限公司 | Polishing equipment and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100414666C (en) | 2008-08-27 |
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Granted publication date: 20080827 Termination date: 20091116 |