CN1949083A - Photoetching machine table, developing apparatus and developing process thereof - Google Patents
Photoetching machine table, developing apparatus and developing process thereof Download PDFInfo
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- CN1949083A CN1949083A CN 200610138025 CN200610138025A CN1949083A CN 1949083 A CN1949083 A CN 1949083A CN 200610138025 CN200610138025 CN 200610138025 CN 200610138025 A CN200610138025 A CN 200610138025A CN 1949083 A CN1949083 A CN 1949083A
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Abstract
The invention supplies developing unit and method. The unit includes one platform, one base plate has exposed photoresist layer, and one fluid injector injected the developer to the base plate at the first time to develop the exposed photoresist and injected one fluid to the base plate at the second time to clean it. Thus it can process pre-cleaning and pre-developing for the photoresist to avoid the under developing. The critical dimension of the processed whole base plate tends to consistent. This can greatly improve developing technology yield.
Description
Technical field
The present invention relates to photoetching process, particularly the used device of development step.
Background technology
When making electronic package, photoetching process is a most important ring.The layout (layout) that how human eye can be discerned copies on the assembly of the circuit with micron/nano grade, needs to rely on the quality of photoetching process.Photoetching process generally comprises following step: substrate cleans, coating photoresist, soft baking soft bake), exposure, develop, carry out subsequent technique such as hard baking (hard bake), ion injection, ion processing or etching, removal photoresist.In order to obtain better lithographic results, according to prior art improvement photoresist method for making, the exposure flow process of improvement stepper, even select different exposure light sources.
Most improvement focuses on that still photoresist is formed or the step of exposure front and back, and has ignored the influence that development step is brought assembly.For instance, Figure 1A-1D is the common developing method of prior art.At first shown in Figure 1A, with platform (not shown) supporting substrate 10, its upper surface is the photoresist 11 that one deck has exposed.Be developer solution injector 12 above substrate 10, it moves to left end with the right-hand member of fixed rate by substrate 10, and injects developer solution formation development liquid layer 14 to substrate 10 tops, shown in Figure 1B.
It should be noted that because developer solution injector 12 moves to left end from the right-hand member of substrate 10 needs a period of time, so the time of developing in substrate 10 two ends is different.Substrate 10 is big more, and then the mistiming of substrate 10 two ends development is big more.The photoresist of substrate 10 right-hand members may produce the phenomenon of developing, and the photoresist of substrate 10 left ends is still underdevelop.This will cause substrate 10 two ends critical dimension (criticaldimension, CD) inconsistent, reduced the yield rate of integrated artistic.And this part loss can't remedy by improving exposure technology.
Shown in Fig. 1 C, by deionized water injector 15 water is injected on the substrate 10 then, rotary plate 10 makes water diffuse to the edge simultaneously.Can learn that water diffuses to the edge by the central authorities of substrate 10 needs a period of time, cause the flushing early of substrate 10 central authorities and underdevelop, the later flushing in edge and cross and develop.This step also makes the central authorities of substrate 10 and edge critical dimension inconsistent, has also reduced the integrated artistic yield rate.
At last, shown in Fig. 1 D, unloading ionized water injector 15 is removed moisture on the substrate 10 in rotation (spin on) monoblock substrate 10 modes, stays the photoresist 16 of patterning.Owing on this substrate 10, make one line construction, need above together photoetching process usually, therefore, Figure 1B and Fig. 1 C step cause the inconsistent problem of critical dimension constantly to accumulate.
Therefore, how to improve the inconsistent problem of the critical dimension on substrate that development step causes,, become the target that needs to make great efforts improvement so that the critical dimension on the substrate is more consistent.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of developing apparatus and developing method thereof, cross the problem of the photoresist developing deficiency of development and back development to avoid the pre-photoresist that develops, and the critical dimension of full wafer substrate will be reached unanimity, significantly improve the yield rate of developing process.Purpose one of of the present invention is to provide a kind of developing apparatus, comprises platform, and in order to supporting substrate, and substrate surface has the photoresist layer that has exposed; One fluid injector moves with respect to substrate, and injects developer solution photoresist layer to develop and to have exposed to the substrate in the very first time, and second time inject fluid to the substrate to clean this substrate.
Another object of the present invention is to provide a kind of photoetching equipment, comprise an above-mentioned developing apparatus and an exposure device.
A further object of the present invention is to provide a kind of developing method of developing apparatus, and this developing apparatus comprises the platform in order to supporting substrate, and substrate surface has photoresist layer and the fluid injector that has exposed, and moves with respect to substrate.This method be included in the very first time inject photoresist layer that developer solution exposed to develop to the substrate and second time inject fluid to the substrate with cleaning base plate.
Above-mentioned purpose for a better understanding of the present invention, feature and advantage describe in detail below with reference to preferred embodiments and drawings.
Description of drawings
Figure 1A-1D is the developing process synoptic diagram of prior art;
Fig. 2 A-2E is the developing process synoptic diagram of the embodiment of the invention; And
Fig. 3 A-3C is the structural representation of the fluid injector of the embodiment of the invention.
Wherein, Reference numeral:
1 platform; 3 accumulator tanks;
10,20 substrates; 11,21 photoresists that exposed;
12 developer solution injectors; 14,24 development liquid layers;
15 deionized water injectors; 16, the photoresist of 26 patternings;
22 fluid injectors; 22A, 22B fluid injector;
25 fluid layers; 31 efferent ducts;
32A, 32B input pipe; 35A developer solution accumulator tank;
35B fluid storage groove.
Embodiment
In embodiments of the present invention, shown in Fig. 2 A, at first with platform 1 fixing base 20.There is the photoresist 21 that has exposed substrate 20 tops, accumulator tank 3 can be set to reclaim the organic solvent that uses in unexposed photoresist or the developing process down.It above the photoresist 21 that has exposed fluid injector 20 of the present invention.
It shown in Fig. 2 B the vertical view of Fig. 2 A.The material of substrate 20 comprises light transmissive material (as: glass, quartz or materials similar), light-proof material (as: silicon, pottery or materials similar) or pliability material (as: plastics, rubber, polyesters, polyalkenes, polyamides class or materials similar or above-mentioned mixing), and embodiments of the invention are to be example with the glass substrate.In addition, substrate 20 lip-deep structures can be any one decks of circuit structure or filter sheet structure.Be the photoresist 21 that has exposed on the surface of substrate 20, and be a fluid injector 22 on the substrate 20, and move, to inject developer solution photoresist 21 to develop and to have exposed to the substrate 20 with respect to substrate 20.First end by substrate 20 begins to inject developer solution, moves second end of fluid injector to substrate 20 with fixed rate.Yet embodiments of the invention are that to move to left end with fluid injector 22 from right-hand member be embodiment, also can move to right-hand member by left end, or move to the other end from other end, are not limited to this at this.Shown in Fig. 2 C, evenly be coated with development liquid layer 24 on the full wafer substrate 20 then.Fluid injector 22 injects the angle of developer solution to substrate 20, is essentially 45 degree, yet is not limited to this.The composition of developer solution is decided on photoresist, and for instance, preferably, the developer solution of positive photoetching rubber is the liquid of meta-alkalescence; The developer solution of negative photoresist preferably, is organic solvent (as: toluene, benzene, acetone or other solvent or above-mentioned mixing).
Before explaining subsequent technique, below first talk about the detailed construction of free flow body injector 22.As shown in Figure 3A, fluid injector 22 has several efferent ducts 31, input pipe 32A, 32B and is connected to efferent duct 31 and is positioned at input pipe 32A, 32B and the operation valve 37 of developer solutions or fluid is injected in the junction of efferent duct 31 in order to control fluid injector 22.Input pipe 32A is connected to developer solution accumulator tank 35A, and input pipe 32B is connected to the fluid storage groove.Except the design of Fig. 3 A, fluid injector 22 also can be the design of Fig. 3 B.In Fig. 3 B, fluid injector 22 is divided into two sub-fluid injector 22A and 22B, is connected to developer solution accumulator tank 35A and fluid separately and injects groove 35B, to provide developer solution and fluid respectively to substrate.Though sub-fluid injector 22A among Fig. 3 B and 22B also can be shown in Fig. 3 C for alternately arranging, sub-fluid injector 22A and 22B perhaps are the mix and match of the two arrangement mode side by side.
It should be noted that, if adopt the fluid injector 22 of Fig. 3 A, be preferably in the step of execution graph 2D before, earlier fluid injector 22 is removed to outside the substrate, thereby carry out the developer solution flush away of a pre-implantation step, pollute to avoid follow-up fluid to be subjected to developer solution with efferent duct 31 remnants.
Then shown in Fig. 2 D, fluid injector 22 injects fluids and form fluid layer 25 cleaning base plates 20 to substrate 20, and the same when injecting developer solution, moves to the left end of substrate 20 with fixed rate from the right-hand member of substrate 20.Those skilled in the art can according to size of substrate, the rete that will develop not parameters such as (as: metal level comprise sweep trace, data line, common electrode, black matrix, pixel electrode or circuit structure, dielectric layer comprise insulation course, etch stop layer or protective seam, active layer comprise that channel layer or ohmic contact layer, organic layer comprise gap, orientation control structure or overlayer), photoresist kind adjust rate travel.Generally speaking, fluid injector translational speed is to equal 80mm/sec in fact, yet embodiments of the invention are not limited to this, and the fluid injector can be in fact equates or does not wait in the translational speed of second time with the fluid injector in the translational speed of the very first time.In other words, the fluid injector is in the very first time, moves to the required time of the other end from an end of substrate and can be in fact equates or do not wait in the translational speed of second time with the fluid injector.Move to the required time of the other end from an end of substrate, should look reason recited above and the design change.And the time of injecting fluid can be identical or different with the time of injecting developer solution, decide on arts demand.Fluid injector 22 injects the angle of developer solution to substrate 20, is less than or equal to 90 degree in fact, preferably, equals 45 degree in fact, yet, and not subject to the limits.General common fluid comprises water, air or organic solvent, or above-mentioned combination.If the combination of adopting water and air is as fluid, the volume ratio of air then preferably is in fact greater than the volume ratio of water.If adopt air as fluid, then can not form the fluid layer 25 shown in Fig. 2 D.This step is a committed step of the present invention, because the part of developing is cleaned earlier earlier, can solve the different partly different problems of its critical dimension in the prior art.
Be spin-dried for step shown in the last execution graph 2E, the photoresist 26 of removing 22 remaining fluid of substrate and staying patterning is to finish whole developing process.Must it should be noted that at this,, then not too need to carry out this and be spin-dried for step if the cleaning step of Fig. 2 D adopts air or the easy organic solvent of doing as fluid.
In addition, developing apparatus of the present invention can be integrated into photoetching equipment with the exposure device (not shown).
In addition, must it should be noted that, the moving direction of the described substrate of the foregoing description, be preferably the moving direction that is different from this fluid injector, for example the fluid injector moves to second direction and substrate is motionless, the fluid injector is motionless and substrate moves to second direction or fluid injector from first direction moves to second direction and substrate moves to first direction from second direction from first direction from first direction, but is not limited thereto.Also can be identical with the moving direction of described fluid injector.
Though more than the invention discloses several preferred embodiments, it is not in order to qualification the present invention, and the those of ordinary skill in any affiliated technical field without departing from the spirit and scope of the present invention, can be done change arbitrarily and modification to the present invention.Therefore protection scope of the present invention should be as the criterion with following claims institute restricted portion.
Claims (25)
1. a developing apparatus is characterized in that, comprising:
One platform, in order to support a substrate, the surface of described substrate has a photoresist layer that has exposed;
One fluid injector moves with respect to described substrate, and a very first time inject a developer solution to the described substrate with the described photoresist layer that has exposed that develops, and one second time inject a fluid to the described substrate to clean described substrate.
2. developing apparatus according to claim 1 is characterized in that, described fluid injector comprises:
At least one efferent duct;
At least two input pipes are connected to described efferent duct, and described input pipe provides described developer solution and described fluid to described efferent duct respectively; And
One operation valve is positioned at the junction of described efferent duct and described input pipe.
3. developing apparatus according to claim 1 is characterized in that, described fluid injector comprises a plurality of first sub-fluid injector and a plurality of second sub-fluid injector, and described demonstration liquid and described fluid are provided respectively.
4. developing apparatus according to claim 3 is characterized in that, the described first sub-fluid injector and the described second sub-fluid injector are alternately arranged.
5. developing apparatus according to claim 3 is characterized in that, the described first sub-fluid injector and the described second sub-fluid injector are side by side.
6. developing apparatus according to claim 1 is characterized in that, described fluid injector injects described developer solution or described fluid to the angle of described substrate and is 45 degree in fact.
7. developing apparatus according to claim 1 is characterized in that, described fluid injector is identical or different in fact in the speed of second time at speed and the described fluid injector of the very first time.
8. developing apparatus according to claim 1 is characterized in that, described fluid comprises water, air, organic solvent or above-mentioned combination.
9. developing apparatus according to claim 8 is characterized in that, described fluid is the combination of water and air, and the volume ratio of air is greater than the volume ratio of water.
10. developing apparatus according to claim 1 is characterized in that, the moving direction of described substrate is different with the moving direction of described fluid injector.
11. developing apparatus according to claim 1 is characterized in that, comprises that also an accumulator tank is positioned under the described platform.
12. a photoetching equipment is characterized in that, comprises a described developing apparatus of claim 1 and an exposure device.
13. the developing method of a developing apparatus, it is characterized in that described developing apparatus comprises that the surface of described substrate has a photoresist layer that has exposed and a fluid injector in order to support a platform of a substrate, and move with respect to described substrate, described method comprises:
The very first time inject a developer solution to the described substrate with the described photoresist layer that has exposed that develops; And
Second time inject a fluid to the described substrate to clean described substrate.
14. the developing method of developing apparatus according to claim 13 is characterized in that, described fluid injector comprises:
At least one efferent duct is to inject described developer solution or described fluid to described substrate;
At least two input pipes are connected to described efferent duct, and described input pipe provides described developer solution and described fluid to described efferent duct respectively; And
One operation valve is positioned at the junction of described efferent duct and described input pipe.
15. the developing method of developing apparatus according to claim 14, it is characterized in that, inject described developer solution to described substrate and inject described fluid to the described substrate between, also comprise moving away to described fluid injection device outside the described substrate and carrying out a pre-output step.
16. the developing method of developing apparatus according to claim 13 is characterized in that, described fluid injector comprises a plurality of first sub-fluid injector and a plurality of second sub-fluid injector, and described demonstration liquid and described fluid are provided respectively.
17. the developing method of developing apparatus according to claim 16 is characterized in that, the described first sub-fluid injector and the described second sub-fluid injector are alternately arranged.
18. the developing method of developing apparatus according to claim 16 is characterized in that, the described first sub-fluid injector and the described second sub-fluid injector are side by side.
19. the developing method of developing apparatus according to claim 13 is characterized in that, described fluid injector injects described developer solution or described fluid and is 45 degree in fact to the angle of described substrate.
20. the developing method of developing apparatus according to claim 13 is characterized in that, it is identical or different in fact to the time on the described substrate with the described fluid of injection to the time on the described substrate to inject described developer solution.
21. the developing method of developing apparatus according to claim 13 is characterized in that, described fluid comprises water, air, organic solvent or above-mentioned combination.
22. the developing method of developing apparatus according to claim 21 is characterized in that, described fluid is the volume ratio of the volume ratio of the combination of water and air and air greater than water.
23. the developing method of developing apparatus according to claim 13 is characterized in that, comprises that also one is spin-dried for step, to remove described substrate institute remaining fluid.
24. the developing method of developing apparatus according to claim 13 is characterized in that, comprises that also an accumulator tank is positioned under the described platform.
25. the developing method of developing apparatus according to claim 13 is characterized in that, the moving direction of described substrate is different with the moving direction of described fluid injector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610138025 CN1949083A (en) | 2006-11-02 | 2006-11-02 | Photoetching machine table, developing apparatus and developing process thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610138025 CN1949083A (en) | 2006-11-02 | 2006-11-02 | Photoetching machine table, developing apparatus and developing process thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1949083A true CN1949083A (en) | 2007-04-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610138025 Pending CN1949083A (en) | 2006-11-02 | 2006-11-02 | Photoetching machine table, developing apparatus and developing process thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064459A (en) * | 2013-03-18 | 2014-09-24 | 三星显示有限公司 | Laser Beam Annealing Apparatus And Method Of Controlling Same |
| CN107422610A (en) * | 2017-07-20 | 2017-12-01 | 武汉华星光电技术有限公司 | A kind of motherboard exposure method |
| WO2023097453A1 (en) * | 2021-11-30 | 2023-06-08 | 深圳华大生命科学研究院 | Pre-developing system and use method therefor |
-
2006
- 2006-11-02 CN CN 200610138025 patent/CN1949083A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064459A (en) * | 2013-03-18 | 2014-09-24 | 三星显示有限公司 | Laser Beam Annealing Apparatus And Method Of Controlling Same |
| CN107422610A (en) * | 2017-07-20 | 2017-12-01 | 武汉华星光电技术有限公司 | A kind of motherboard exposure method |
| CN107422610B (en) * | 2017-07-20 | 2019-09-24 | 武汉华星光电技术有限公司 | A kind of motherboard exposure method |
| WO2023097453A1 (en) * | 2021-11-30 | 2023-06-08 | 深圳华大生命科学研究院 | Pre-developing system and use method therefor |
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Open date: 20070418 |