CN1944268A - Method for preparing gallium nitride nano crystal using sol-gel method - Google Patents
Method for preparing gallium nitride nano crystal using sol-gel method Download PDFInfo
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- CN1944268A CN1944268A CN 200610016271 CN200610016271A CN1944268A CN 1944268 A CN1944268 A CN 1944268A CN 200610016271 CN200610016271 CN 200610016271 CN 200610016271 A CN200610016271 A CN 200610016271A CN 1944268 A CN1944268 A CN 1944268A
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- gallium nitride
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Abstract
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Claims (1)
- A kind of method with the Prepared by Sol Gel Method gallium nitride nano crystal is characterized in that the preparation method carries out in two steps:The first step is for adopting Prepared by Sol Gel Method gallium oxide/agraphitic carbon mixture, and operation steps is: 1) the gallium nitrate solid is dissolved into weight percent concentration and is in 62% the concentrated nitric acid, the ammoniacal liquor that drips saturation concentration is in solution, and making its pH value is 7.5-8.2; When 2) solution being heated to 80 ℃, slowly add the citric acid solid powder in solution, present transparent thickly up to solution, continue to stir again 2 hours, stop heating then, become clear gel behind the naturally cooling; 3) clear gel is placed retort furnace, descended dry 15-45 minute for 400 ℃, obtain canescence multilayer sprills and be gallium oxide/agraphitic carbon mixture in temperature;Second step: utilize the high-temperature tubular vacuum oven to prepare gallium nitride nano crystal, operation steps is: in the aluminum oxide porcelain boat of the cleaning of 1) gallium oxide/agraphitic carbon mix powder being packed into, powder is evenly spread out in porcelain boat bottom, then porcelain boat is pushed in the horizontal vitrified pipe of vacuum oven and be positioned at the high-temperature zone, middle part; 2) be connected with tubular type vacuum oven ferrule and with vacuum unit, the air in the vent pipe charges into ammonia then, and makes ammonia flow continually and steadily at 80ml/min; 3) setting tubular type vacuum oven temperature is 850~950 ℃, and vitrified pipe is warming up to design temperature, and temperature rise rate is 8 ℃/min, and insulation is 1 hour after temperature reaches set(ting)value, closes ammonia air-flow and furnace power then; 4) in the tubular type vacuum oven, feed argon gas and make argon flow amount continually and steadily at 100ml/min, treat that vitrified pipe naturally cools to room temperature after, take out aluminium oxide boat, the product that makes is the gallium nitride nano crystal of yellow powder powder.
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CNB2006100162711A CN100410179C (en) | 2006-10-25 | 2006-10-25 | Method for preparing gallium nitride nano crystal using sol-gel method |
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CNB2006100162711A CN100410179C (en) | 2006-10-25 | 2006-10-25 | Method for preparing gallium nitride nano crystal using sol-gel method |
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CN1944268A true CN1944268A (en) | 2007-04-11 |
CN100410179C CN100410179C (en) | 2008-08-13 |
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CNB2006100162711A Expired - Fee Related CN100410179C (en) | 2006-10-25 | 2006-10-25 | Method for preparing gallium nitride nano crystal using sol-gel method |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105483828A (en) * | 2015-12-24 | 2016-04-13 | 成都新柯力化工科技有限公司 | Preparation method for improving quality of gallium nitride crystals |
CN105502313A (en) * | 2015-12-24 | 2016-04-20 | 成都新柯力化工科技有限公司 | Method for preparing gallium nitride nanocrystals by using twin-screw extruder |
CN105543968A (en) * | 2015-12-21 | 2016-05-04 | 成都新柯力化工科技有限公司 | Low-cost method for preparing gallium nitride crystal |
CN107364838A (en) * | 2017-06-19 | 2017-11-21 | 南开大学 | The preparation method of the gallium nitride nano material of iron series element doping |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CA1071068A (en) * | 1975-03-19 | 1980-02-05 | Guy-Michel Jacob | Method of manufacturing single crystals by growth from the vapour phase |
CN1182039C (en) * | 2002-08-20 | 2004-12-29 | 浙江大学 | Rod-like polycrystal GaN and its two-step prepn process |
CN1291909C (en) * | 2002-10-17 | 2006-12-27 | 中国科学技术大学 | Hot synthetic preparation of metastable rock salt phase nano gallium nitride in solvent |
JP4034261B2 (en) * | 2003-11-25 | 2008-01-16 | 北川工業株式会社 | Method for producing group III nitride |
CN1319852C (en) * | 2005-12-15 | 2007-06-06 | 太原理工大学 | High purity gallium nitride nanometer line preparation method |
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2006
- 2006-10-25 CN CNB2006100162711A patent/CN100410179C/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105543968A (en) * | 2015-12-21 | 2016-05-04 | 成都新柯力化工科技有限公司 | Low-cost method for preparing gallium nitride crystal |
CN105543968B (en) * | 2015-12-21 | 2018-06-05 | 江苏锡沂高新区科技发展有限公司 | A kind of method that low cost prepares gallium nitride |
CN105483828A (en) * | 2015-12-24 | 2016-04-13 | 成都新柯力化工科技有限公司 | Preparation method for improving quality of gallium nitride crystals |
CN105502313A (en) * | 2015-12-24 | 2016-04-20 | 成都新柯力化工科技有限公司 | Method for preparing gallium nitride nanocrystals by using twin-screw extruder |
CN105502313B (en) * | 2015-12-24 | 2018-06-05 | 上海欣鑫化工有限公司 | A kind of method that gallium nitride nano crystal is prepared using double screw extruder |
CN107364838A (en) * | 2017-06-19 | 2017-11-21 | 南开大学 | The preparation method of the gallium nitride nano material of iron series element doping |
CN107364838B (en) * | 2017-06-19 | 2019-12-03 | 南开大学 | The preparation method of the gallium nitride nano material of iron series element doping |
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CN100410179C (en) | 2008-08-13 |
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Assignee: Tianjin Ranyue Environmental Protection Innovative Technology Co., Ltd. Assignor: China National Academy Nanotechnology & Engineering Contract record no.: 2010120000122 Denomination of invention: Method for preparing gallium nitride nano crystal using sol-gel method Granted publication date: 20080813 License type: Exclusive License Open date: 20070411 Record date: 20100910 |
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Effective date of registration: 20151125 Address after: 300457, room 306, building C4, Tian Da Science Park, No. fourth, 80 Avenue, Tianjin economic and Technological Development Zone Patentee after: Tianjin Zhongtian Genon Technology Co. Ltd. Address before: 300457 No. fourth, 80 Avenue, Tianjin economic and Technological Development Zone Patentee before: China National Academy Nanotechnology & Engineering |
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