CN1943084A - Nitride compound semiconductor element and production method therefor - Google Patents
Nitride compound semiconductor element and production method therefor Download PDFInfo
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- CN1943084A CN1943084A CN200580011771.XA CN200580011771A CN1943084A CN 1943084 A CN1943084 A CN 1943084A CN 200580011771 A CN200580011771 A CN 200580011771A CN 1943084 A CN1943084 A CN 1943084A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Abstract
A nitride compound semiconductor element comprising a substrate (1) having an upper surface and a lower surface, and a semiconductor laminate structure (40) supported on the upper surface of the substrate (1), the substrate (1) and the semiconductor laminate structure (40) having at least two cleavage surfaces. At least one cleavage inducing member (3) in contact with either one of the two cleavage surfaces is provided, and the size, in a direction parallel to the cleavage surface, of the cleavage inducing member (3) is smaller than the size, in a direction parallel to the cleavage surface, of the upper surface of the substrate (1).
Description
Technical field
The present invention relates to nitride semiconductor device and manufacture method thereof.
Background technology
For forming with general formula I n
xGa
yAl
zThe band gap of the nitride-based semiconductor of N (wherein, x+y+z=1,0≤x≤1,0≤y≤1,0≤z≤1) expression by adjusting the composition ratio of each element, can have the size corresponding with blue light or ultraviolet light.For this reason, studying the light-emitting components such as semiconductor laser that possess nitride-based semiconductor as active layer energetically.
Fig. 1 has represented the crystal structure of nitride-based semiconductor.Nitride-based semiconductor has the crystal structure of hexagonal crystal system as shown in Figure 1.Thus, top (interarea) be made as (0001) face and when the resonator end face being made as the semiconductor laser of formation of M face (1-100) when making, then be easy to not to be A face, but produce cleavage along crystal face from 30 ° of A face tilts along vertical with these faces.Consequently, be not only when the cleavage of carrying out along the A face, and when carrying out along the cleavage of M face (1-100) and forming the resonator end face, all can have easily in 60 ° the direction of having tilted from M face (1-100) to produce problem of cracks.
Because this kind problem, all the time, it is very difficult making the nitride semiconductor device with level and smooth resonator end face.
And, owing to do not have cleavage fissure as the widely used sapphire substrate of the substrate of nitride semiconductor device in the past, therefore carried out following trial, promptly, when formation has possessed the semiconductor laser of sapphire substrate,, rule along the M face by nitride semiconductor layer one side from growing at sapphire substrate, on nitride semiconductor layer, form scar, make that the formation of cleavage surface is more easy.
Patent documentation 1: the spy opens the 2000-058972 communique
But, according to described conventional art,, therefore be easy to generate " burr ", " fragment ", " end check " etc. owing to utilize line or scribing (dicing) in nitride semiconductor layer, to form scar, thus the problem that has the manufactured materials utilance to reduce.In addition,, therefore produce scar or concavo-convex at resonator end face (light emergence face) owing to be easy to generate the distortion or the crystal defect of active layer, thus the problem that also has optical characteristics or reliability to reduce.
In addition, on substrate, form when having reduced the lateral crystal growth layer of defect concentration,, also have the situation that scar can not arrive substrate even begin to carry out the edge line from the nitride semiconductor layer side.In addition, be present in air gap between lateral crystal growth layer and the substrate or insulating film layer, therefore be easy to generate peeling off of crystal, also have the situation that produces damage owing to be that mechanical strength is low, the zone of fragility.Thus, particularly under the situation of growth lateral crystal growth layer on the substrate, utilize method in the past to be difficult to obtain good resonator face.
Summary of the invention
The present invention finishes in order to solve described problem, and its main purpose is, nitride semiconductor device and the manufacture method thereof that can carry out cleavage with good stock utilization are provided.
Nitride semiconductor device of the present invention is to possess: above having and below substrate, by the semiconductor laminated structure that supports above of described substrate, the nitride semiconductor device that described substrate and semiconductor laminated structure have 2 cleavage surfaces at least, possess with described 2 cleavage surfaces in any one at least one cleavage triggering component that joins, the size of the direction parallel with described cleavage surface of described cleavage triggering component is less than the size of the top direction parallel with described cleavage surface of described substrate.
In preferred embodiment, have the shape of rectangle above the described substrate, described cleavage member is arranged at least one place at 4 top angles of described substrate.
In preferred embodiment, described semiconductor laminated structure possesses the laser resonator structure that described cleavage surface plays a role as the resonator end face, and the resonator length direction size of described cleavage triggering component is below half of resonator length.
In preferred embodiment, described cleavage triggering component is littler than the rectangle of 180 μ m * 50 μ m.
In preferred embodiment, the number of described cleavage triggering component is arranged along the resonator length direction more than 2, and the interval of adjacent cleavage triggering component is at more than 80% of resonator length on the resonator length direction.
In preferred embodiment, described cleavage triggering component is formed by the mask layer in the top or described semiconductor laminated structure that is formed at described substrate.
In preferred embodiment, described cleavage triggering component is formed by the space that is formed in the described semiconductor laminated structure.
In preferred embodiment, on described substrate described, be formed with groove, described mask layer is positioned at the top of described groove.
In preferred embodiment, described mask layer is formed by the material of the crystal growth of the semiconductor layer that suppresses to constitute described semiconductor laminated structure.
In preferred embodiment, described mask layer by be selected from by silicon, aluminium, titanium, niobium, zirconium, tantalum any one oxide or at least a material in the group that constitutes of nitride, gold, platinum, aluminium, nickel, palladium and titanium form.
In preferred embodiment, described cleavage triggering component is configured in the both sides of the laser guided wave road part in the described semiconductor laminated structure.
In preferred embodiment, described semiconductor laminated structure comprises: n type nitride semiconductor layer and p type nitride semiconductor layer, be located in the active layer between described n type nitride semiconductor layer and the p type nitride semiconductor layer.
In preferred embodiment, described substrate is a nitride-based semiconductor.
In preferred embodiment, on described substrate described and below described, be formed with pair of electrodes.
The manufacture method of nitride semiconductor device of the present invention is to have possessed to have top and following substrate, manufacture method by the nitride semiconductor device of the semiconductor laminated structure that supports above of described substrate, comprise: the operation of preparing to be used to be divided into the wafer of described substrate, growth constitutes the operation of each semiconductor layer of described semiconductor laminated structure on described wafer, by described wafer and semiconductor laminated structure cleavage being formed the operation of the cleavage surface of described semiconductor laminated structure, also comprise the operation that a plurality of cleavage triggering components is arranged in the position that should form described cleavage surface.
In preferred embodiment, the operation of arranging described cleavage triggering component comprises: pile up dielectric film operation, form and be arranged in the operation that regulation should form a plurality of mask layers on the straight line of position of described resonator end face by described dielectric film being carried out patterning.
In preferred embodiment, described mask layer is formed on the interarea of described wafer.
In preferred embodiment, described mask layer is formed in the described semiconductor laminated structure.
According to the present invention, owing to cause cleavage along cleavage triggering component, therefore what can solve that cleavage for the hexagonal crystal system nitride-based semiconductor becomes problem is being easy to generate problem of cracks with respect to the M face along 60 ° of directions, forms level and smooth resonator end face easily.
In addition, according to the present invention, because therefore the formation of the distortion of the scar of the burr that is easy to generate can be suppressed at cleavage time the, fragment, resonator end face or concavo-convex, active layer, crystal defect etc. can also obtain the optical characteristics of final resulting semiconductor laser and the effect that electrical characteristic improves.
Description of drawings
Fig. 1 is the stereogram in the crystal face orientation of expression nitride-based semiconductor.
Fig. 2 (a) to (c) is the process profile of the manufacture method of the formation of mask layer of expression embodiments of the present invention 1 and nitride-based semiconductor stromatolithic structure 40.
Fig. 3 (a) and (b) be the profile of the relation of expression mask layer of embodiments of the present invention 1 and nitride-based semiconductor stromatolithic structure 40.
Fig. 4 be indication cycle's property arranged the schematic diagram of wafer of the mask layer of embodiments of the present invention 1.
Fig. 5 is the vertical view of shape of the mask layer of expression embodiments of the present invention 1.
Fig. 6 (a) be indication cycle's property arranged the vertical view of wafer of the mask layer of embodiments of the present invention 1, (b) be the vertical view of the semiconductor laser cut apart of expression.
Fig. 7 (a) to (i) is the process profile of the course of processing of the nitride semiconductor device of expression embodiments of the present invention 1.
Fig. 8 is the schematic diagram of method of separation of the nitride semiconductor device of expression embodiments of the present invention 1.
Fig. 9 is the vertical view of the laser bar that utilizes a cleavage formation of expression embodiments of the present invention 1.
Figure 10 is the schematic diagram of nitride semiconductor device after the secondary cleavage of expression embodiments of the present invention 1.
Figure 11 is the top view of installation form of the nitride semiconductor device of expression embodiments of the present invention 1.
Figure 12 (a) and (b) be the schematic diagram of a cleavage of nitride semiconductor device of the comparative example of expression embodiments of the present invention 1.
Figure 13 (a) to (i) is the process profile of the manufacture method of expression embodiments of the present invention 2.
Figure 14 is the figure of formation of the GaN wafer 1 of expression embodiments of the present invention 3.
Figure 15 is the figure of formation of the GaN wafer 1 of expression embodiments of the present invention 3.
Figure 16 is the figure of the nitride semiconductor device of expression embodiments of the present invention 4.
Figure 17 (a) and (b), (c) are respectively the vertical views with difform mask layer (cleavage triggering component).
Figure 18 is the optical microscope photograph that has formed the cleavage surface of end check.
Figure 19 is the optical microscope photograph that is illustrated near the section of the sample that is formed with thick epitaxially grown layer in the zone of mask layer.
Figure 20 is the optical microscope photograph of the cleavage that breaks away from from the row of mask layer with rectangular shape of expression.
Figure 21 (a) is the vertical view of the easy cleavage deviation in driction that the schematically shows crystal cleavage when becoming the cleavage triggering component that striated extends, and (b) is the vertical view of the cleavage when schematically showing the discontinuous orientation of easy cleavage deviation in driction cleavage triggering component of crystal.
Wherein, 1 ... wafer, 3 ... cleavage triggering component (mask layer), 18 ... light-guide wave path, 23 ... p side distribution, 24 ... n side distribution, 27 ... groove, 30 ... high defect density regions, 40 ... semiconductor laminated structure
Embodiment
Nitride semiconductor device of the present invention possesses: have above and below substrate, by the semiconductor laminated structure that supports above of substrate, substrate and semiconductor laminated structure have 2 cleavage surfaces at least.
Among the present invention, because more easy, be provided with " cleavage triggering component ", therefore in the major part of each semiconductor element of final made, will have cleavage triggering component (at least a portion) for " cleavage " that make the crystal that carries out in the manufacturing process.In each cleavage triggering component of each semiconductor element and 2 cleavage surfaces any one joined.That is, cleavage triggering component of the present invention does not have the size that extends to the opposing party from a side of 2 cleavage surfaces being in the relation that is parallel to each other.The size of the direction parallel with cleavage surface of cleavage triggering component is less than the size of the top direction parallel with cleavage surface of substrate.That is, cleavage triggering component of the present invention has the size that contacts with the part of cleavage surface, and the edge does not laterally extend to the end from the end on cleave plane.
Below, will be in the reference accompanying drawing, the execution mode 1 of nitride semiconductor device of the present invention is described.Nitride semiconductor device of the present invention preferably utilizes the semiconductor laser of cleavage surface as the resonator end face, yet also can be light-emitting component or transistor that LED (Light Emitting Diode) waits other.Though the semiconductor element beyond the semiconductor laser does not utilize cleavage surface as the resonator end face, yet if can utilize cleavage that hard nitride is separated into chip with good stock utilization, advantages such as manufacturing is more easy is arranged.
(execution mode 1)
At first,, the manufacture method of the nitride semi-conductor laser of present embodiment is described in Fig. 2 (e) at reference Fig. 2 (a).Part sectioned view when Fig. 2 (a) is main operation to Fig. 2 (e).Illustrated part in fact only has the part of the wafer of the size about diameter 50mm.
Shown in Fig. 2 (a), be the GaN wafer 1 of (0001) face above preparing, coating photoresist film 2 on GaN wafer 1.And the section of the GaN wafer 1 that is manifested from Fig. 2 (a) to Fig. 2 (d) is M (1-100) face, utilizes a cleavage to expose.＜11-20〉direction is on the paper of figure, and is parallel with top (0001) of GaN wafer 1.
By carry out exposure and development with known photo-mask process, will shown in Fig. 2 (b), carry out patterning to photoresist film 2 to photoresist film 2.The photoresist film 2 that pattern has been handled has a plurality of peristomes of periodically arranging on the direction of being expert at and being listed as 2 '.The shape of peristome 2 ', size and position can at random be set by the design of employed photomask in the exposure of change photo-mask process.In the present embodiment, determine the configuration of peristome 2 ' in the mode of stipulating " cleavage triggering component 3 " shown in Figure 4.The details of formation shown in Figure 4 will be narrated in the back.
Then, shown in Fig. 2 (c), on photoresist mask 2, pile up silicon dioxide (SiO
2) film 3 '.The major part of silicon dioxide film 3 ' is positioned on the photoresist mask 2, and a part contacts in peristome 2 ' with above the GaN wafer 1.The accumulation of silicon dioxide film 3 ' for example can utilize the ECR sputtering method to carry out.After this,, lift from, shown in Fig. 2 (d), form the cleavage triggering component 3 that constitutes by silicon dioxide like that by organic solutions such as photoresist film 2 usefulness acetone are removed.
Then, form the stromatolithic structure 40 of nitride-based semiconductor on by the GaN wafer 1 of the state above periodically being arranged at a plurality of cleavage triggering components 3.In the present embodiment, utilize organic metal vapor phase growth (MOVPE) method, growth is with In
xGa
yAl
zThe layer of the nitride-based semiconductor of N (wherein, x+y+z=1,0≤x≤1,0≤y≤1,0≤z≤1) expression.Specifically, on GaN wafer 1, form the semiconductor laminated structure 40 shown in Fig. 2 (e).
Below, will be in reference Fig. 2 (e), the manufacturing process of the semiconductor laminated structure 40 of present embodiment is described.
At first, the GaN wafer 1 that has formed cleavage triggering component 3 is in the above remained on the pedestal in the reacting furnace of MOVPE device.After this, reacting furnace is warmed up to about 1000 ℃, the quantity delivered of supplying with simultaneously as unstrpped gas is the trimethyl gallium (TMG) of 7sccm and the ammonia (NH that quantity delivered is 7.5slm
3) gas, as the hydrogen of carrier gas, and supply with silane (SiH as n type dopant
4) gas, growth thickness is about 1 μ m and the Si impurity concentration is about 1 * 10
18Cm
-3N type GaN layer 10.
At this moment, on the zone that covers by cleavage triggering component 3 in the middle of on GaN wafer 1, the crystal growth that does not directly produce n type GaN.But because the n type GaN that grows the zone that is not covered by cleavage triggering component 3 in the middle of above GaN wafer 1 is along laterally growing on the surface of cleavage triggering component 3, so the surface of cleavage triggering component 3 is also by 10 covering of n type GaN layer.
Thereafter, when also supplying with trimethyl aluminium (TMA), growth is about 1.5 μ m and the Si impurity concentration is about 5 * 10 by thickness
17Cm
-3 n type Al
0.05Ga
0.95The n type coating layer 11 that N constitutes.Grown by thickness be about 120nm and Si impurity concentration be about 1 * 10 thereafter,
18Cm
-3The first smooth guide layer 12 that constitutes of n type GaN after, temperature be reduced to be about 800 ℃, carrier gas is changed to nitrogen from hydrogen, supply with trimethyl indium (TMI) and TMG, growth is about the In of 3nm by thickness
0.1Ga
0.9Quantum well that N constituted (3 layers) and thickness are about the In of 9nm
0.02Ga
0.98The multiple quantum trap active layer 13 that N barrier layer (2 layers) constitutes.
Once more the temperature in the reacting furnace is warming up to and is about 1000 ℃, carrier gas is reverted to hydrogen from nitrogen, at the bis-cyclopentadienyl magnesium (Cp that supplies with as p type dopant
2Mg) gas the time, growth is about 10nm by thickness and the Mg impurity concentration is about 5 * 10
17Cm
-3P type Al
0.15Ga
0.85The cap layer (cap layer) 14 that N constitutes.
Then, growth is about 120nm and the Mg impurity concentration is about 1 * 10 by thickness
18Cm
-3The second smooth guide layer 15 that constitutes of p type GaN.Thereafter, growth is about 0.5 μ m and impurity concentration is about 5 * 10 by thickness
17Cm
-3P type Al
0.05Ga
0.95The p type coating layer 16 that N constitutes.At last, growth is about 0.1 μ m and the Mg impurity concentration is about 1 * 10 by thickness
18Cm
-3The p type contact layer 17 that constitutes of p type GaN.
And, by adjusting the crystal growth condition of n type GaN layer 10 or other semiconductor layer, can also be not the surface of cleavage triggering component 3 not be covered fully, residual under the state that makes it to expose.Fig. 3 (a) has represented the semiconductor laminated structure 40 that forms under the condition that does not produce crystal growth on the cleavage triggering component 3.
Among Fig. 2 (e), though with the top smooth mode record of n type GaN layer 10, yet according to the having or not of cleavage triggering component 3, the concavo-convex situation of formation is very common on n type GaN layer 10.Under opposite extreme situations, as previously mentioned, on cleavage triggering component 3, also can make n type GaN layer 10 have zero size partly.In addition, also can form on the cleavage triggering component 3 have with other zone on the n type GaN layer 10 of thickness thickness about equally of part.
In the example shown in Fig. 2 (e), in the middle of the semiconductor laminated structure 40 be positioned at cleavage triggering component 3 directly over part 30 (below be called " high defect density zone ".) crystallinity relatively worsen.Thus, grow in the semiconductor laminated structure 40 on the GaN wafer 1, the existence because of cleavage triggering component 3 or high defect density zone 30 has produced local stress.Owing on straight line, form the very big stress in this kind part, and on prescribed direction, cause cleavage easily.
Cleavage triggering component 3 do not need directly to be formed at wafer 1 above, also can be formed on certain layer of each semiconductor layer 10～16 shown in Fig. 2 (c).Fig. 3 (b) has schematically shown the example that has disposed cleavage triggering component 3 in semiconductor laminated structure 40.
Like this,, utilize the arrangement of cleavage triggering component 3, can in semiconductor laminated structure 40, periodically produce distortion according to present embodiment.But, when the thickness of cleavage triggering component 3 is excessive, because its influence might also produce very big distortion in active layer.In order not make this kind distortion become excessive, as long as the thickness of cleavage triggering component 3 is made as below the 0.5 μ m.
But according to the shape or the position of cleavage triggering component 3, thickness also can be set at the value that surpasses 0.5 μ m.Particularly, when as Fig. 3 (a) and (b), cleavage triggering component 3 is not covered by semiconductor, and under situation about seeing above semiconductor laminated structure 40, cleavage triggering component 3 exposes and can observe the time, the thickness of cleavage triggering component 3 is arbitrarily.
Below, will be in reference Fig. 4, the formation of cleavage triggering component 3 is elaborated.
The cleavage triggering component 3 of present embodiment not to be forming the zone 18 ' mode of intersecting with being formed at light-guide wave path in the semiconductor laminated structure 40, along＜11-20〉direction periodically arranges.At＜11-20〉in the direction 2 adjacent cleavage triggering components 3 distance setting for the laser component that finally obtains＜11-20 the roughly the same value of direction size.In the present embodiment, because each laser component＜11-20〉the direction size is about 400 μ m, therefore＜and 11-20〉arrangement pitches of cleavage triggering component 3 of direction also is set at 400 μ m.
On the other hand, cleavage triggering component 3＜1-100 the arrangement pitches of direction is set at the value that equates with the resonator length of each laser component.In the present embodiment, because resonator length is about 600 μ m, so cleavage triggering component 3＜1-100〉arrangement pitches of direction also is set at 600 μ m.
The flat shape of each cleavage triggering component 3 for example is a square (size: 10 μ m * 10 μ m).Like this, on wafer 1, arrange, just can on correct position, once reach the secondary cleavage along line 25 and line 26 by comparing enough little cleavage triggering component 3 with the size of each laser component.As long as being positioned at the position (line 25 and line 26) that should cause cleavage, the arrangement of cleavage triggering component 3 goes up, need be with certain periodic arrangement.But, owing to preferably form zone 18 ' mode and dispose to avoid light-guide wave path, so preferred cycle ground is arranged.
Cleavage because be so that (1-100) mode exposed as cleavage surface of face along＜11-20 direction carries out, so cleavage triggering component 3＜1-100 the size of direction preferably compares enough little with resonator length.This be because, when cleavage triggering component 3＜1-100 during direction oversize, then be difficult to the position position of direction (＜the 1-100 〉) of regulation cleavage surface.So, cleavage triggering component 3＜1-100 the size of direction need be below half of resonator length, in the preferred resonator below 20%.Below the preferred 150 μ m of the absolute value of this size, more preferably below the 50 μ m.
On the other hand, cleavage triggering component 3＜11-20 direction size also can with＜1-100 the size of direction compares relatively bigger.Cleavage triggering component 3＜11-20〉size of direction is by guaranteeing that cleavage causes effect, and the decision of the viewpoint of distortion that reduces in light-guide wave path, to produce or density of defects.Thus, cleavage triggering component 3＜11-20 more than the gravel size decision 5 μ m of direction, can be compared to most from laser component＜11-20 deducted the guided wave road the direction size the value of width (＜11-20〉direction size) littler.Cleavage triggering component 3＜11-20〉below the above 180 μ m of the preferred 5 μ m of typical dimensions of direction.
Fig. 5 has represented the preferred example of the flat shape of cleavage triggering component 3.As shown in Figure 5, when cleavage triggering component 3 at＜11-20 have major axis on the direction, two ends are sharp-pointed and when forming acute angle, just are easy to be suppressed at from＜11-20〉direction of 60 ° of deviations in driction produces the situation in crack.And the shape of cleavage triggering component 3 and configuration are not limited to described example.
And line 25 shown in Figure 4 is by being arranged in＜11-20〉the row regulation of a plurality of cleavage triggering components 3 on the direction, on this line 25, will produce one time cleavage.Thus, cleavage triggering component 3＜1-100〉arrangement pitches of direction preferably is set at resonator length and equates, cleavage triggering component 3＜11-20〉the then not Stimulated Light device size of component restriction of arrangement pitches of direction.Promptly, as long as cleavage triggering component 3 is positioned on the line 25, and is disposed at light-guide wave path and forms in the zone in addition, zone 18 ', then do not need as described above, along＜11-20 direction is with certain periodic arrangement.
Fig. 6 has schematically shown the formation of utilizing cleavage and secondary to separate the chip of cutting apart in the reason wafer.1 of each chip that state before Fig. 6 (a) expression is cut apart, Fig. 6 (b) expression have been cut apart.
In the example shown in Fig. 6 (b), though on the position of crosscut cleavage triggering component 3, produce cleavage, yet cleavage surface does not need crosscut cleavage triggering component 3, also can be formed at cleavage triggering component 3 near.When shown in Fig. 6 (b), produce when once reaching the secondary cleavage in the mode of crosscut cleavage triggering component 3, then in each chip of the semiconductor laser that finally obtains, will contain the fragment of 4 cleavage triggering components 3 at tetra-pack.But each semiconductor laser need not contain the fragment of 4 cleavage triggering components 3 at tetra-pack.According to the position of cleavage, (fragment or integral body) number of contained cleavage triggering component 3 can change in each semiconductor laser.Under opposite extreme situations, certain specific semiconductor laser can have finally 1 situation that cleavage triggering component 3 does not contain.In such cases, in certain semiconductor laser adjacent with this semiconductor laser, bad land does not comprise at least 1 cleavage triggering component 3.
The material of cleavage triggering component 3 is not limited to SiO
2, also can be insulants such as silicon nitride.Preferably by be selected from by silicon, aluminium, titanium, niobium, zirconium, tantalum any one oxide or at least a material in the group that constitutes of nitride, gold, platinum, aluminium, nickel, palladium and titanium form.
Cleavage triggering component 3 not only can be an insulant so long as can cause optionally that for the nitride-based semiconductor stacked in order to constitute laser configuration the material of growth gets final product, and also can be metal.In addition, also can with respect to the nitride semiconductor crystal of being grown, form different semiconductors.In addition, cleavage triggering component 3 also can be by inject the rotten part that ion etc. produces in nitride semiconductor crystal layer.If for example with stacked nitride semiconductor crystal and aluminium form different aluminum gallium nitride (Al
xGa
yN: wherein, x+y=1,0≤x≤1,0≤y≤1) use as cleavage triggering component 3, then because at nitride semiconductor crystal and Al
xGa
yThermal coefficient of expansion difference in the N mask layer produces stress difference on the interface, so the cleavage of back operation will more easily be carried out.For Al
xGa
yThe Al of N mask layer forms, and preferably the Al of coating layer forms big.Because Al
xGa
yThe Al of N mask layer forms big more, and then the coefficient of thermal expansion in the c face is just big more, therefore can produce very big stress difference.
Below, will when reference Fig. 7 (a) arrives Fig. 7 (i), the execution mode of making the method for semiconductor laser by the wafer 1 of the semiconductor laminated structure 40 that has formed Fig. 2 (e) be described.
At first, shown in Fig. 7 (a), on semiconductor laminated structure 40, formed insulating barrier 19 after, be coated with photoresist film 20 thereon.Then, in photo-mask process, carry out the exposure and the development of photoresist film 20, shown in Fig. 7 (b), form photoresist mask 20 '.Photoresist mask 20 ' has the pattern that regulation light-guide wave path shown in Figure 4 forms the striped in zone 18 '.By with the part hydrofluoric acid solution etching that is not covered in the middle of the dielectric film 19, will shown in Fig. 7 (c), top (the p type contact layer 17) of semiconductor laminated structure 40 be exposed by photoresist mask 20 '.
After shown in Fig. 7 (d), photoresist mask 20 ' being removed, shown in Fig. 7 (e), the part that film 19 ' covers that is not insulated in the middle of the top of semiconductor stromatolithic structure 40 is carried out etching.This can be by being loaded into wafer 1 in the dry-etching device, carries out anisotropic dry-etching and carry out.Till anisotropic etching proceeds to and makes that a part (nubbin) that is positioned at the p type semiconductor layer on the active layer reaches about thickness 100nm.
By as Fig. 7 (f) shown in insulating barrier 19 ' removed, just can form by p type contact layer 17 and Al thereafter,
0.05Ga
0.95The carinate light-guide wave path 18 that N coating layer 16 constitutes.The bearing of trend of this light-guide wave path 18 is＜1-100 〉.
Then, shown in Fig. 7 (g), the zone in addition, zone that forms n type electrode is used by SiO
2After the dielectric film 21 that constitutes covers,, n type contact layer is exposed by carrying out dry-etching.When removing dielectric film 21, promptly obtain the structure shown in Fig. 7 (h).
Then, shown in Fig. 7 (i), piled up the dielectric film 22 that the electricity that is used to carry out p side and n side separates after, the parts that are positioned on the p type contact layer in the middle of the dielectric film 22 are removed with hydrofluoric acid solution.On the part of having removed dielectric film 22 successively form n lateral electrode 23 and p lateral electrode 24 thereafter.The structure that n lateral electrode 23 for example has molybdenum (Mo), platinum (Pt), gold (Au) stacked, p lateral electrode 24 have for example had the structure of palladium (Pd), Pt and Au stacked.
Below, will at reference Fig. 8 in Figure 10, cleavage and installation procedure be elaborated.
At first, grind the back side of GaN wafer 1, with the reduced thickness of the integral body of semiconductor laminated structure 40 and wafer 1 to being about about 100 μ m.Then, to carry out the mode of a cleavage along line shown in Figure 8 25, use not shown device stress application.At this moment, the stress that produces on the interface of cleavage triggering component 3 and nitride semiconductor layer is released, along being arranged in＜11-20〉cleavage triggering component 3 on the direction causes cleavage.Thus, just can be suppressed at the generation in the crack on 60 ° the direction, make the laser bar of level and smooth resonator end face with M face (1-100).Like this, in the present embodiment, owing to utilize the existence of cleavage triggering component 3, will be difficult to take place blocking of laser bar that the generation by described crackle causes, the laser bar that therefore just can extend, thus can reduce manufacturing cost, the raising stock utilization.
Then, on two sides of the resonator end face of the laser bar (Fig. 9) that utilizes cleavage to obtain or a side, formed by SiO
xAnd TiO
xBehind the dielectric multilayer film that constitutes,, just from each laser bar, be separated into chip of laser shown in Figure 10 (each semiconductor laser) by carrying out secondary cleavage along line 26.Each semiconductor laser possesses the chip of cutting apart from GaN wafer 1 as substrate.
Then, on the fin 28 that constitutes by carborundum (SiC), each semiconductor laser is set, their p side is partly contacted, utilize terminal conjunction method to carry out distribution by scolding tin.At this moment, utilize cleavage triggering component 3 to be present in situation on the certain location of laser component, the effect of the alignment mark in the time of can making cleavage triggering component 3 performances as installation procedure.
Preferably as shown in figure 11, so that laser component edge＜1-100 above fin 28〉mode that direction is outstanding carries out soldering.In the example shown in Figure 11, the cleavage triggering component 3 that is disposed at light ejaculation end face side is in from fin 28 along the state that crosses out.Owing to utilize this kind configuration, scolding tin will be difficult to be attached on the light emergence face, can suppress light is penetrated the pollution of end face, so the mounting material utilance improves.
Utilize the laser component of described method manufacturing to have level and smooth resonator face, at room temperature, when threshold current 30mA, 50mW export, can confirm to carry out continuous agitation, demonstrated the life-span more than 1000 hours with operating current 60mA.
In addition, the laser component of present embodiment is owing near tensile stress cleavage triggering component 3 is released, and therefore near the resonator end face, band gap is relatively large, and formation can suppress " the window zone " of light absorption.Consequently, the light that can realize high output penetrates.And though the distance between cleavage triggering component 3 and ridge very in short-term, the Stress Release effect uprises, yet the possibility of importing defective also uprises in light emergence face.Thus, cleavage triggering component 3 is in the scope of 2～50 μ m with the distance setting of vallum line, for example is set at about 5 μ m.
Therefore in the described example,,, also can utilize the cutting of laser etc. along line 26 because the face beyond the resonator end face needs not be cleavage surface though also carry out cleavage along line 26.
(comparative example)
Figure 12 (a) reaches the experimental result of (b) having represented to have carried out for the wafer of making as a comparative example a cleavage.Not forming beyond cleavage triggering component 3 this point if this comparative example is removed, then is to utilize and wafer to the identical method making of the illustrated method of execution mode 1.
Figure 12 (a) represented comparative example wafer above.When using the cleavage device, when the direction of the line 25 in figure is carried out a cleavage, then on 60 ° direction, produce the crack with respect to the M face, shown in Figure 12 (b), laser bar 50 is on the way blocked.Thus, compare with the rod of execution mode 1, can only obtain the laser bar 50 of the length about 1/5, stock utilization is extremely low.In addition, because it is also uneven to utilize the light of a cleavage formation to penetrate end face, so the operating current height, life time is also short.
(execution mode 2)
Below,, the execution mode 2 of nitride semi-conductor laser of the present invention is described in Figure 13 (i) at reference Figure 13 (a).
At first, shown in Figure 13 (a), be the GaN wafer 1 of (0001) face above preparing, coating photoresist film 2 on GaN wafer 1.The section of the GaN wafer 1 that is manifested among Figure 13 (a)～Figure 13 (i) is M (1-100) face.＜11-20〉direction is on the paper of figure, and is parallel with top (0001) of GaN wafer 1.
By carry out exposure and development with known photo-mask process, will shown in Figure 13 (b), carry out patterning to photoresist film 2 to photoresist film 2.The photoresist film 2 that pattern has been handled have periodic arrangement two-dimensionally a plurality of peristomes 2 '.The shape of peristome 2 ', size and position can be by the change photo-mask process exposure the time employed photomask and at random setting.In the present embodiment, determine the configuration of peristome 2 ' in the mode of the arrangement of stipulating cleavage triggering component shown in Figure 43.
Then, shown in Figure 13 (c), on photoresist mask 2, pile up silicon dioxide film 3 '.The major part of silicon dioxide film 3 ' is positioned on the photoresist mask 2, and a part contacts in peristome 2 ' with above the GaN wafer 1.The accumulation of silicon dioxide film 3 ' for example can utilize the ECR sputtering method to carry out.
Then,, lift from, form the cleavage triggering component 3 shown in Figure 13 (d) by organic solutions such as photoresist film 2 usefulness acetone are removed.
Then, after cleavage triggering component 3 has been grown GaN layer 4 on by the GaN wafer 1 of the state above periodically being arranged in, GaN wafer 1 is taken out from reacting furnace, form the dielectric film 5 of selecting growth usefulness on the top of GaN layer 4.The SiO of the dielectric film 5 of present embodiment about by the thickness 100nm that utilizes plasma CVD equipment to pile up
2Form.
Then, in photo-mask process, after being coated with photoresist film 6 on the dielectric film 5,, shown in Figure 13 (f), form the photoresist film 6 ' that is treated to striated by exposing and developing.The width that this photoresist film 6 ' has each striped is that 3 μ m, arrangement pitches are the pattern of 18 μ m.The bearing of trend of striped and GaN wafer 1＜1-100〉direction is parallel.
Then, photoresist film 6 ' as etching mask, by the exposed portions serve of dielectric film 5 is removed with hydrofluoric acid solution, shown in Figure 13 (g), is formed the isolation masks 5 ' of striated.As Figure 13 (h) shown in, utilize organic solutions such as acetone photoresist film 6 ' removed thereafter.
Then, select growth in order to make GaN layer 7, the substrate that will pile up the dielectric film 5 ' of striated once more remains on the pedestal of reacting furnace of described MOVPE device.After this, in the hydrogen atmosphere of pressure 200Torr, be warmed up to and be about 1000 ℃, TMG by supplying with 7sccm simultaneously and the NH of 7.5slm
3Gas, as the hydrogen of carrier gas, just can shown in Figure 13 (i), select to select growing GaN layer 7 on the growth mask pattern.
The exposed division of GaN layer 4 plays a role as the Seed portion 9 of crystal growth.The dislocation density of Seed portion 9 equates with the dislocation density of GaN wafer 1, is about 1 * 10
6/ cm
3But the dislocation density of the cross growth crystalline region of GaN layer 7 (wing portion) is reduced to about 1 * 10
5/ cm
3
Below, by carrying out and the operation identical operation illustrated, make the semiconductor laser of present embodiment to execution mode 1.In the present embodiment, owing to be set at the bearing of trend of light-guide wave path 18 parallel with the bearing of trend of striated dielectric film 5 ', therefore light-guide wave path 18 is just avoided high Seed portion 8 of dislocation density and crystal combination portion 9, is formed in the selection growth district that dislocation density has been reduced.Like this, just can reduce operating current, life-saving.
According to present embodiment, except the effect of execution mode 1, owing to can also obtain to reduce the effect of the dislocation density of selecting grown layer, so the life-span of laser component was brought up to more than 2000 hours.
(execution mode 3)
Below, will the execution mode 3 of nitride semi-conductor laser of the present invention be described.
In the present embodiment, on the GaN wafer 1 before the growing nitride semiconductor crystal, periodically form groove, on groove, form mask layer (cleavage triggering component 3) in vertical with light-guide wave path and Uncrossed mode.
At first, on the GaN wafer 1 that with (0001) face is interarea, pile up photoresist film, utilize photoetching, along the nitride semiconductor layer that forms thereafter＜11-20 direction is vertical with light-guide wave path and photoresist is not removed with about 400 μ m across with being partitioned into the wave wire.Photoresist film as etching mask, is carried out dry-etching with the dry-etching device to GaN wafer exposed division, as shown in figure 14, the arrangement of a plurality of grooves 27 of formation on GaN wafer 1.Each groove 27 has the size that vertical about 2 μ m * horizontal 10 μ m, the degree of depth are about 2 μ m, is preferably formed as on the dysgenic positions such as near can not causing crystal modification to the light-guide wave path that forms thereafter.The section parallel of groove 27 with (11-20) face be shaped as the V word.Groove 27 is preferably in＜11-20〉extend more longways on the direction, form the top of acute angle at its two ends.
Then, as shown in figure 15, in groove 27, form cleavage triggering component 3.The formation method of cleavage triggering component 3 is with identical to the illustrated method of execution mode 1.But, in the present embodiment,, yet between cleavage triggering component 3 and groove 27, also can produce dislocation a little preferably so that the mode of the aligned in position of the position of cleavage triggering component 3 and groove 27 is implemented mask alignment accurately.
Thereafter operation is not owing to identical to the illustrated operation of execution mode 1, therefore repeat explanation here.
In the present embodiment, owing under cleavage triggering component 3, form groove 27, so easier initiation cleavage, thereby the level and smooth resonator end face of easier formation.
(execution mode 4)
Below, the execution mode 4 of nitride semi-conductor laser of the present invention is described.
In the present embodiment, as shown in figure 16, use n type GaN wafer 1, form n type electrode 24 overleaf.In the present embodiment, after having formed light-guide wave path 18, begin thickness with integral body from the back side of GaN wafer 1 and be ground to and reach about about 70 μ m.According to cleavage initiating method in the past, because damaged easily when the substrate that to mechanical property is fragility uses line and scribing, stock utilization is low, therefore needs to make substrate thickness to remain about 100 μ m in the operation of grinding.But, in the present embodiment,, therefore substrate thickness further can be reduced owing to do not use line and scribing etc.When can the attenuate substrate,, therefore can expect the effect that life-span of laser component prolongs because the radiating efficiency of laser component integral body improves.
In the present embodiment, have conductive of n-type GaN wafer 1, therefore as shown in figure 16, can directly form n lateral electrode 24 at the back side of GaN wafer 1 owing to use.
And, though when the pattern that carries out n lateral electrode 24 in the mode in the zone of avoiding taking place cleavage and secondary cleavage is handled, when cleavage, just can prevent peeling off of n lateral electrode 24, yet also can form n lateral electrode 24 on the whole at the back side of n type GaN wafer 1.
In the present embodiment,, therefore can realize the miniaturization of laser component, can make laser component with low cost because electrode is formed at the back side of GaN wafer 1.
(embodiment)
Shape and size to cleavage triggering component are carried out various changes, estimated cleavage well whether.Below, the manufacture method of sample used among the embodiment is described.
At first, prepare the GaN wafer of thickness 400 μ m, form the cleavage triggering component that constitutes by dielectric film at its interarea.Specifically, the GaN wafer has been carried out cleaning with acetone, sulfone, methyl alcohol and buffered hydrofluoric acid (BHF) after, utilize the ECR sputter equipment, piled up SiN layer (lower floor) and SiO successively
2Layer (upper strata).SiO
2The thickness of layer and SiN layer is set at 10nm and 100nm or 10nm and 500nm respectively.
Then, these laminate are utilized photoetching technique and etching technique have carried out the pattern processing.SiN layer and SiO
2The etching of layer is to utilize to use CF
4The dry-etching of (carbon tetrafluoride) gas carries out.Thereafter, clean (acetone+sulfuric acid aquae hydrogenii dioxidi), formed the cleavage triggering component of required form, the cleavage triggering component of present embodiment plays a role as the mask layer of selecting growth usefulness in the epitaxial growth operation of next carrying out.Below, the cleavage triggering component of present embodiment is called " mask layer ".
Figure 17 (a) has represented the flat shape of the mask layer that forms in the present embodiment respectively to (c).Figure 17 (a) and (b) mask layer of expression with hexagonal flat shape are along＜11-20〉the direction shape that is in line arranges.For at one end having towards＜11-20〉limit on the summit of direction and＜11-20 the angle that forms between the direction, in the example of Figure 17 (a), be set at 30 degree, in the example of Figure 17 (b), be set at 60 degree.The mask layer that Figure 17 (c) has represented to have rectangular flat shape is along＜11-20〉the direction shape that is in line arranges.
Figure 17 (a) and (c) shown in mask layer in, with＜11-20〉the parallel limit of direction compares all relative longer with other limit.
Table 1 has represented to have the size (sample No.1～6) of the mask layer of the shape shown in Figure 17 (a).Table 2 has represented to have the size (sample No.7～12) of the mask layer of the shape shown in Figure 17 (b).Table 3 has represented to have the size (sample No.13～24) of the mask layer of the shape shown in Figure 17 (c).For each sample, the thickness of mask layer is set at two kinds of 100nm and 500nm as previously mentioned.
[table 1]
| Hexagon (30deg) | ||
| No. | <11-20>×<1-100> [μm][μm] | The |
| 1 | 10×5[μm] | ○ |
| 2 | 50×5 | ○ |
| 3 | 50×10 | ○ |
| 4 | 180×5 | ○ |
| 5 | 180×10 | ○ |
| 6 | 180×50 | ○ |
[table 2]
| Hexagon (60deg) | ||
| No. | <11-20>×<1-100> [μm][μm] | The result |
| 7 | 10×5 | ○ |
| 8 | 50×5 | ○ |
| 9 | 50×10 | ○ |
| 10 | 180×5 | ○ |
| 11 | 180×10 | ○ |
| 12 | 180×50 | ○ |
[table 3]
| Quadrangle | |||||
| No. | <11-20>×<1-100> [μm][μm] | The result | No. | <11-20>×<1-100> [μm][μm] | The |
| 13 | 3×5 | × | 19 | 50×5 | ○ |
| 14 | 3×10 | × | 20 | 50×10 | ○ |
| 15 | 5×5 | × | 21 | 50×50 | ○ |
| 16 | 10×5 | ○ | 22 | 180×5 | ○ |
| 17 | 10×10 | ○ | 23 | 180×10 | ○ |
| 18 | 10×50 | ○ | 24 | 180×50 | × |
And, each represented each mask layer＜11-20 direction size,＜1-100 the size of direction.For example in the sample No.6 shown in the table 1, mask layer＜11-20〉direction is of a size of 180 μ m,＜1-100〉direction is of a size of 50 μ m.
In the present embodiment, a plurality of mask layers that will have described shape and a size on wafer with the spacing arrangement of 400 μ m.The number that is arranged in 1 mask layer on the straight line is 30.
Then, utilize the MOVPE method to carry out the optionally epitaxial growth of nitride-based semiconductor.Specifically, wafer is cleaned with BHF, at the SiO that passes through the mask layer upper strata
2Carry out Wet-type etching and after clean SiN mask surface is exposed, utilize the MOVPE reacting furnace to form to have the semiconductor laminated structure of double-heterostructure.The condition of the growth that growth conditions is carried out during with the semiconductor laminated structure 40 that forms shown in Fig. 2 (e) is identical.
In the present embodiment, the surface of mask layer is made of SiN, in its surface grown semiconductor layer not basically.But, when the size of mask layer when 5 μ m are following, utilize cross growth, the top major part of mask layer is covered by semiconductor layer.The thickness of the semiconductor laminated structure of coverage mask layer is also different, owing to be present on the mask layer, has formed recess in the above.
Wafer to the semiconductor laminated structure that formed formation like this on interarea begins to grind from rear side, the thickness adjusted of wafer is about 100 μ m after, utilize edge line and the disrumpent feelings cleavage of carrying out, estimated cleavage well whether.
The evaluation result of sample No.1～24 has been represented on the rightest hurdle from table 1 to table 3.The mark of " zero " in " result " hurdle of each table means the rod that utilizes cleavage can make length 12mm rightly.On the other hand, the mark of " * " means that cleavage surface breaks away from the row of mask layer, can't make the rod of length 12mm rightly.
In the sample 13～15 of table 3, cleavage is not carried out rightly.Its reason is because mask layer undersized.Figure 18 is that the planar dimension of expression mask layer is little, the optical microscope photograph of the section of the sample of the row of cleavage surface disengaging mask layer.As can see from Figure 18, on cleavage surface, be formed with the end check.But, even the size of mask layer is little,, use when having the mask layer of hexagonal shape when shown in table 1 and table 2, also can carry out cleavage rightly.
Under the rectangular situation of being shaped as of mask layer, as shown in table 3, as＜1-100〉size of direction when above, then can't normally carry out cleavage to 50 μ m greatly.
From above result as can be seen, mask layer preferably has the shape that has the summit on the direction parallel with cleavage surface.When using the mask layer of the shape (for example rectangle or square) that does not have this kind summit, preferably its size is set in the appropriate scope.
Figure 19 represents because the planar dimension of mask layer is excessive, so near the optical microscope photograph of the section of the sample of uneven thickness one change of the epitaxial loayer the mask layer.Because when mask layer becomes excessive, then might in semiconductor laminated structure, produce and be out of shape etc., so mask layer preferably makes the size less than 180 μ m * 50 μ m, be more preferably less than the size of 10 μ m * 30 μ m.In addition, the thickness of mask layer for example can be set at the following value arbitrarily of 1.0 μ m.And, under typical situation, after cleavage, remain in the only about half of size that mask layer at least a portion at 4 angles of chip will have described size.
Figure 20 is the optical microscope photograph that expression has formed the substrate interarea after the cleavage of sample of the mask layer with relatively large size.Though the flat shape at mask layer is under the dimetric situation, cleavage surface breaks away from the row of mask layer, yet is under the hexagonal situation in the flat shape of mask layer, can carry out cleavage rightly.
As described above, among the present invention, by with cleavage triggering component on wafer intermittently and linearity ground arrange, just the enough good stock utilizations of energy be carried out cleavage.
Shown in Figure 21 (a), when on wafer, being formed on groove 300 grades of extending more continuously on should the face of cleavage, if its extending direction departs from the easy cleavage surface of crystal slightly, then cleavage surface will depart from the extending direction of groove greatly, thereby loses the meaning that cleavage triggering component is set.On the other hand, shown in Figure 21 (b), when cleavage triggering component 3 is arranged discontinuously, depart from, can prevent that also cleavage surface breaks away from the situation of the orientation of cleavage triggering component greatly even between its orientation and easy cleavage direction, produce.
And, also can after the epitaxial growth operation that is through with, mask layer be removed by utilizing etching, form the space in the part that had mask layer.After this kind etching, when carrying out cleavage, then the space will play a role as cleavage triggering component.
Utilize possibility on the industry
Nitride semi-conductor laser of the present invention can expect that the short wavelength light source that is difficult to the GaN substrate of cleavage as use produces in batches with laser instrument.
Claims (18)
1. nitride semiconductor device, possess above having and below substrate and by the semiconductor laminated structure that supports above of described substrate, described substrate and semiconductor laminated structure have 2 cleavage surfaces at least, wherein,
Possess with described 2 cleavage surfaces in any one at least one cleavage triggering component that joins, the size of the direction parallel with described cleavage surface of described cleavage triggering component is less than the size of the top direction parallel with described cleavage surface of described substrate.
2. nitride semiconductor device according to claim 1 wherein, has the shape of rectangle above the described substrate, described cleavage member is arranged at least one place at 4 top angles of described substrate.
3. nitride semiconductor device according to claim 1, wherein, described semiconductor laminated structure possesses the laser resonator structure that described cleavage surface plays a role as the resonator end face,
The resonator length direction size of described cleavage triggering component is below half of resonator length.
4. nitride semiconductor device according to claim 1, wherein, described cleavage triggering component has the little size of rectangle than 180 μ m * 50 μ m.
5. nitride semiconductor device according to claim 1, wherein, the number of described cleavage triggering component is arranged along the resonator length direction more than 2,
The interval of adjacent cleavage triggering component is at more than 80% of resonator length on the resonator length direction.
6. nitride semiconductor device according to claim 1, wherein, described cleavage triggering component is formed by the mask layer in the top or described semiconductor laminated structure that is formed at described substrate.
7. nitride semiconductor device according to claim 1 and 2, wherein, described cleavage triggering component is formed by the space that is formed in the described semiconductor laminated structure.
8. nitride semiconductor device according to claim 6 wherein, is formed with groove on described substrate described, described mask layer is positioned at the top of described groove.
9. nitride semiconductor device according to claim 6, wherein, described mask layer is formed by the material of the crystal growth of the semiconductor layer that suppresses to constitute described semiconductor laminated structure.
10. nitride semiconductor device according to claim 6, wherein, described mask layer by be selected from by silicon, aluminium, titanium, niobium, zirconium, tantalum any one oxide or at least a material in the group that constitutes of nitride, gold, platinum, aluminium, nickel, palladium and titanium form.
11. nitride semiconductor device according to claim 3, wherein, described cleavage triggering component is configured in the both sides of the laser guided wave road part in the described semiconductor laminated structure.
12. nitride semiconductor device according to claim 1, wherein, described semiconductor laminated structure comprises: n type nitride semiconductor layer and p type nitride semiconductor layer and be located in described n type nitride semiconductor layer and p type nitride semiconductor layer between active layer.
13. nitride semiconductor device according to claim 1, wherein, described substrate is a nitride-based semiconductor.
14. nitride semiconductor device according to claim 9 wherein, is formed with pair of electrodes on described substrate described and below described.
15. the manufacture method of a nitride semiconductor device, be possessed have above and below substrate and by the manufacture method of the nitride semiconductor device of the semiconductor laminated structure that supports above of described substrate, comprising:
Preparation be used to be divided into the wafer of described substrate operation,
The operation of each semiconductor layer of the described semiconductor laminated structure of the formation of on described wafer, growing,
By described wafer and semiconductor laminated structure cleavage being formed the operation of the cleavage surface of described semiconductor laminated structure,
Also comprise the operation that a plurality of cleavage triggering components is arranged in the position that should form described cleavage surface.
16. manufacture method according to claim 15, wherein, the operation of arranging described cleavage triggering component comprises:
The operation of accumulation dielectric film,
Form and be arranged in the operation that regulation should form a plurality of mask layers on the straight line of position of described resonator end face by described dielectric film being carried out patterning.
17. manufacture method according to claim 16, wherein, described mask layer is formed on the interarea of described wafer.
18. manufacture method according to claim 16, wherein, described mask layer is formed in the described semiconductor laminated structure.
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| JP300907/2004 | 2004-10-15 | ||
| JP2004300907 | 2004-10-15 |
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| WO2007074688A1 (en) * | 2005-12-26 | 2007-07-05 | Matsushita Electric Industrial Co., Ltd. | Nitride compound semiconductor element and method for manufacturing same |
| JP5060732B2 (en) * | 2006-03-01 | 2012-10-31 | ローム株式会社 | LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING THE LIGHT EMITTING ELEMENT |
| JP2008235790A (en) * | 2007-03-23 | 2008-10-02 | Mitsubishi Electric Corp | Manufacturing method of semiconductor light element |
| WO2009069286A1 (en) * | 2007-11-27 | 2009-06-04 | Sophia School Corporation | Iii nitride structure and method for manufacturing iii nitride structure |
| JP5237764B2 (en) * | 2008-11-10 | 2013-07-17 | スタンレー電気株式会社 | Manufacturing method of semiconductor device |
| KR101064068B1 (en) | 2009-02-25 | 2011-09-08 | 엘지이노텍 주식회사 | Manufacturing method of light emitting device |
| CN102714152B (en) * | 2010-01-19 | 2015-04-01 | 夏普株式会社 | Functional element and manufacturing method of same |
| CN103681969B (en) * | 2013-12-12 | 2016-05-25 | 上海师范大学 | A kind of based on SiC substrate photoconductive switch preparation method |
| JP6430009B2 (en) * | 2015-07-07 | 2018-11-28 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| US10930559B2 (en) | 2017-04-12 | 2021-02-23 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device |
| JP6504319B1 (en) * | 2018-03-29 | 2019-04-24 | 三菱電機株式会社 | Semiconductor device manufacturing method |
| CN113964252A (en) * | 2020-07-21 | 2022-01-21 | 苏州晶湛半导体有限公司 | Semiconductor structure and preparation method thereof |
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| US5604763A (en) | 1994-04-20 | 1997-02-18 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor laser diode and method for producing same |
| JP3892519B2 (en) | 1997-02-21 | 2007-03-14 | 株式会社東芝 | Method for manufacturing compound semiconductor light emitting device |
| EP0874405A3 (en) * | 1997-03-25 | 2004-09-15 | Mitsubishi Cable Industries, Ltd. | GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
| JP2861991B2 (en) | 1997-10-20 | 1999-02-24 | 日亜化学工業株式会社 | Method of manufacturing gallium nitride based compound semiconductor chip |
| JP3805883B2 (en) | 1997-12-26 | 2006-08-09 | 東芝電子エンジニアリング株式会社 | Gallium nitride based semiconductor wafer, gallium nitride based semiconductor device, and manufacturing method thereof |
| JPH11340576A (en) * | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | Gallium nitride based semiconductor device |
| JP2000040856A (en) | 1998-07-23 | 2000-02-08 | Sony Corp | Semiconductor element, semiconductor laser and fabrication thereof |
| JP2000058972A (en) | 1998-08-04 | 2000-02-25 | Nichia Chem Ind Ltd | Nitride semiconductor laser element |
| JP2000174334A (en) | 1998-12-02 | 2000-06-23 | Mitsubishi Cable Ind Ltd | Manufacture of gallium nitride semiconductor element |
| JP3988018B2 (en) * | 2001-01-18 | 2007-10-10 | ソニー株式会社 | Crystal film, crystal substrate and semiconductor device |
| JP2004262757A (en) * | 2001-04-24 | 2004-09-24 | Sony Corp | Nitride semiconductor, semiconductor element, and their manufacture methods |
| US6939730B2 (en) | 2001-04-24 | 2005-09-06 | Sony Corporation | Nitride semiconductor, semiconductor device, and method of manufacturing the same |
| JP2003008143A (en) | 2001-06-18 | 2003-01-10 | Sony Corp | Multi-beam semiconductor laser device |
| JP2003051636A (en) | 2001-08-06 | 2003-02-21 | Sony Corp | Semiconductor device and manufacturing method therefor |
| JP2003163375A (en) | 2001-11-29 | 2003-06-06 | Sanyo Electric Co Ltd | Nitride semiconductor element and its manufacturing method |
| JP3753077B2 (en) | 2002-02-07 | 2006-03-08 | 日本電気株式会社 | Semiconductor multilayer film, semiconductor device using the same, and manufacturing method thereof |
| US6890785B2 (en) | 2002-02-27 | 2005-05-10 | Sony Corporation | Nitride semiconductor, semiconductor device, and manufacturing methods for the same |
| JP2003282543A (en) | 2002-03-26 | 2003-10-03 | Matsushita Electric Ind Co Ltd | Method of dry-etching gallium-nitride based compound semiconductor |
| JP2004288846A (en) * | 2003-03-20 | 2004-10-14 | Mitsubishi Electric Corp | High frequency package |
| JP4561038B2 (en) | 2003-03-20 | 2010-10-13 | 日亜化学工業株式会社 | Method of manufacturing nitride semiconductor device |
| US7338827B2 (en) | 2003-03-25 | 2008-03-04 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor laser and method for fabricating the same |
| JP2004336040A (en) * | 2003-04-30 | 2004-11-25 | Osram Opto Semiconductors Gmbh | Method of fabricating plurality of semiconductor chips and electronic semiconductor baseboard |
-
2005
- 2005-10-13 US US11/568,481 patent/US8093685B2/en not_active Expired - Fee Related
- 2005-10-13 JP JP2006540973A patent/JP4901477B2/en not_active Expired - Fee Related
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- 2005-10-13 WO PCT/JP2005/018881 patent/WO2006041134A1/en active Application Filing
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- 2011-08-19 US US13/213,362 patent/US20110304025A1/en not_active Abandoned
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| WO2006041134A1 (en) | 2006-04-20 |
| JPWO2006041134A1 (en) | 2008-05-22 |
| US20110304025A1 (en) | 2011-12-15 |
| CN100454693C (en) | 2009-01-21 |
| US20130122693A1 (en) | 2013-05-16 |
| JP4901477B2 (en) | 2012-03-21 |
| US20080042244A1 (en) | 2008-02-21 |
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