CN1941448A - Self-rotary valve electromagnetic resistor based on hard magnetic material and its production - Google Patents
Self-rotary valve electromagnetic resistor based on hard magnetic material and its production Download PDFInfo
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- CN1941448A CN1941448A CN200510086523.3A CN200510086523A CN1941448A CN 1941448 A CN1941448 A CN 1941448A CN 200510086523 A CN200510086523 A CN 200510086523A CN 1941448 A CN1941448 A CN 1941448A
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- 239000000696 magnetic material Substances 0.000 title claims description 67
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- 238000005859 coupling reaction Methods 0.000 claims abstract description 46
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 34
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- 230000005291 magnetic effect Effects 0.000 claims description 190
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- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 claims description 8
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Abstract
The invention is concerned with spin valve magnetoresistance device using for hard magnetism material. It relates to an underlay and its cushion layer, and there are hard magnetism layer, the first soft magnetism layer, non-magnetism metal conducting layer or insulated layer, the second soft magnetism layer and cover layer. The hard magnetism layer is made up of ferromagnetic material with high remanence and big coercive force. The soft magnetism layer is made up of ferromagnetic material with high spin polarization ratio and small coercive force. This device relates to ferromagnetic/antiferromagnetic coupling layer between the hard magnetism layer and the first soft magnetism layer. The said hard magnetism layer is complex hard magnetism layer, while the second soft magnetism layer is complex soft magnetism layer. This device is made up by vacuum plating method to form the said layer on the monocrystal underlay in turn. It owns high stability of heat without the thermal diffusion of Mn, and is fit for giant magnetoresistance device and tunnelling magnetoresistance device.
Description
Technical field
The present invention relates to a kind of magneto-resistance device with spin valve structure, specifically relate to a kind of based on magneto-resistance device with spin valve structure with hard magnetic material pinning soft magnetic material, and preparation method thereof.
Background technology
Since people such as Baibich in 1988 found giant magnetoresistance effect (GMR) in the Fe/Cr multilayer film since, this effect was by extensive and deep research.Dieny in 1991 propose a kind of giant magnetoresistance device of spin valve structure, and its core texture comprises four layers, is followed successively by from the bottom to top: an inverse ferric magnetosphere, first ferromagnetic layer, nonmagnetic metal separator and second ferromagnetic layer.This structure is because it has big magneto-resistor ratio and little upset field, being applied in computer magnetic playback head and the Magnetic Sensor by success.Nineteen ninety-five, T.Miyazaki and J.S.Moodera have independently obtained under the room temperature 18% and 10% TMR ratio respectively in MTJ (MTJ).Perfect through development, the MTJ of main flow has also adopted the sandwich structure of spin valve type, its core texture still is four layers, and different with the giant magnetoresistance device of spin valve structure is, (thickness is 1～2nm) to have replaced the nonmagnetic metal separator to use a thin insulating barrier.These magneto-resistance devices with spin valve structure have following characteristics: 1. in the scope of little magnetic field (about 100 oersteds), magnetic reversal can not take place and keep the initial magnetization direction constant in first ferromagnetic layer; 2. second ferromagnetic layer can freely overturn and realize disposing with the parallel and antiparallel magnetization of first ferromagnetic layer; 3. provide less Resistance states (" 0 ") during the parallel magnetization of first ferromagnetic layer, provide bigger Resistance states (" 1 ") during antiparallel magnetization with second ferromagnetic layer.
Having the antiferromagnetic pinning material in the magneto-resistance device of above-mentioned spin valve structure, mainly is that to utilize the Mn based on exchange bias effect be that antiferromagnet is formed, as Ir
18Mn
72, Pt
50Mn
50, Fe
50Mn
50, Ni
50Mn
50, they can provide bigger bias-field.But after these antiferromagnet film material deposition preparations, generally need under specific temperature, anneal and to form antiferromagnetic preferably phase structure.And, can cause the thermal stability of magneto-resistance device to descend because the Mn atom is easy to generate the thermal diffusion to ferromagnetic layer, that is to say that magneto-resistor ratio can sharply descend when high temperature (representative value is greater than 300 ℃) heat treatment.
Summary of the invention
The magneto-resistance device that the objective of the invention is to overcome existing Mn and be the spin valve structure that antiferromagnet forms needs anneal under specific temperature, and because the defective that the magneto-resistance device thermal stability that the thermal diffusion meeting of Mn atom causes descends, thereby provide a kind of based on the spin valve structure of hard magnetic material pinning, do not have the thermal diffusion of Mn and magneto-resistance device with high thermal stability, and preparation method thereof.
The objective of the invention is to realize by the following technical solutions:
The invention provides a kind of self-rotary valve electromagnetic resistor spare based on hard magnetic material, comprise: a substrate and on resilient coating, on described resilient coating, deposited hard magnetic layer (hereinafter to be referred as HM), first soft magnetosphere (hereinafter to be referred as FM1), nonmagnetic metal conductive layer (hereinafter to be referred as NM) or insulating barrier (hereinafter to be referred as I), second soft magnetosphere (hereinafter to be referred as FM2) and cover layer successively.
Described substrate is MgO, Al
2O
3, GaAs, SrTiO
3, LaAlO
3, or Si;
Described resilient coating is Ru, Cr, and Cu, Pt, Au, Ag, Fe, Ta, Mo, Zr, Nb or their mixture are formed;
The thickness of described resilient coating is 5～50nm;
Described hard magnetic layer is that remanence ratio is higher, and the ferromagnetic material that coercive force is bigger is formed, and for example coercive force specifically comprises at the material of 1～3KOe: Co
xPt
1-xAlloy, wherein 0.3＜x＜0.8; [Co (t
1Nm)/Pt (t
2Nm)]
NPeriodic multilayer film, wherein 0.3＜t
1＜0.7,0.8＜t
2＜1.5, N represents number of cycles; SmCo
yAlloy, wherein 3.0＜y＜9.0; NdFeB permanent magnetism, wherein Nd content is 14～30at%, and B content is 6～8at%, and all the other are Fe; Fe
zPt
1-zAlloy, wherein 0.3＜z＜0.8; Preferably, as Co
0.4Pt
0.6, Nd
0.15Fe
0.77B
0.08, Fe
0.5Pt
0.5
Described hard magnetic layer thickness is 4～20nm;
Described soft magnetosphere FM1 and FM2 are the spin polarizability height, and the less ferromagnetic material of coercive force is formed, and comprising: Co, Fe, Ni or their mixture, or amorphous Co
100-x-yFe
xB
y(0＜x＜100,0＜y≤20), or Heusler alloy are as Co
2MnSi, Co
2Cr
0.6Fe
0.4Al; The preferred Co of soft magnetosphere material
90Fe
10, Co
75Fe
25, Co
40Fe
40B
20, or Ni
78Fe
22
The thickness of described soft magnetosphere is 3～10nm;
Described nonmagnetic metal conductive layer is Ru, Cu, and Ag, Au, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc or their mixture are formed;
Described nonmagnetic metal conductive layer thickness is 2～5nm;
Described insulating barrier is that oxide is formed, and described oxide comprises: Al
2O
3, AlN, MgO, Ta
2O
5, HfO
2
The thickness of described insulating barrier is 0.7nm～3nm;
Described cover layer is Pt, Ru, and Ta or their mixture are formed;
Described tectal thickness is 4～6nm.
Self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention also is included in the ferromagnetic/antiferromagnetic coupling layer (hereinafter to be referred as P/AP) between the hard magnetic layer and first soft magnetosphere.
Described ferromagnetic/the antiferromagnetic coupling layer is Ru, Au, Cu, Ag, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc, Ir, Rh or their mixture are formed;
Described ferromagnetic/thickness of antiferromagnetic coupling layer is 0.7～2.5nm.
Self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention, wherein said hard magnetic layer can also be by the first hard magnetic material layer (hereinafter to be referred as HM1), the compound hard magnetic layer that the second ferromagnetic/antiferromagnetic coupling layer (hereinafter to be referred as AP2) and the second hard magnetic material layer (hereinafter to be referred as HM3) are formed; HM1 and HM3 form antiferromagnetic coupling by AP2, constitute closed magnetic circuit, make this compound hard magnetic layer more can resist the effect of external magnetic field and magnetized state is more stable, pinning effect to above-mentioned first soft magnetosphere is stronger, and, since should be compound the inner formation of hard magnetic layer closed magnetic circuit, will arrive minimumly to the magnetostatic effect of second soft magnetosphere, more help second soft magnetosphere and freely respond external magnetic field.
Hard magnetic material layer in the described compound hard magnetic layer (HM1 layer and HM3 layer) is to be made of the material that constitutes aforementioned hard magnetic layer; The thickness of each hard magnetic layer is 4～20nm;
Second ferromagnetic/antiferromagnetic coupling layer in the described compound hard magnetic layer is Ru, Au, and Cu, Ag, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc, Ir, Rh or their mixture are formed; Its thickness is 0.7～2.5nm.
Self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention, wherein said second soft magnetosphere can also be by the 3rd soft magnetosphere (hereinafter to be referred as FM3), the composite soft-magnetic layer that the 3rd ferromagnetic/antiferromagnetic coupling layer (hereinafter to be referred as AP3) and the 4th soft magnetosphere (hereinafter to be referred as FM4) constitute; FM3 and FM4 form antiferromagnetic coupling by AP3.
Soft magnetosphere in the described composite soft-magnetic layer (FM3 and FM4) is made of the material that constitutes aforementioned soft magnetosphere; The thickness of each soft magnetosphere is 3～10nm;
The 3rd ferromagnetic/antiferromagnetic coupling layer in the described composite soft-magnetic layer is Ru, Au, and Cu, Ag, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc, Ir, Rh or their mixture are formed; Its thickness is 0.7～2.5nm.
The invention provides a kind of preparation method of above-mentioned self-rotary valve electromagnetic resistor spare based on hard magnetic material, it forms resilient coating, hard magnetic layer, first soft magnetosphere, nonmagnetic metal conductive layer or insulating barrier, second soft magnetosphere and cover layer successively for adopt the method for vacuum coating on single crystalline substrate, and the vacuum degree of described vacuum coating is better than 10
-5Pa; Specifically comprise following step:
1) adopt conventional magnetically controlled sputter method on substrate, to prepare resilient coating;
2) underlayer temperature is set in 300～800 ℃, the induced magnetic field that adds a size and be 100～500Oe adopts conventional magnetically controlled sputter method growth hard magnetic layer on resilient coating;
3) with step 2) deposition that obtains the substrate of hard magnetic layer from vacuum coating equipment, take out, adopt VSM to make the easy magnetizing axis of hard magnetic layer; Particularly, change the direction of sample with respect to the VSM scanning magnetic field, it is best to choose remanence ratio from the M-H curve, and its corresponding sample easily axle provides reference for following step with VSM scanning magnetic field direction conllinear and with its demarcation on substrate; Usually, the easy axle of sample is along a certain crystal orientation of single crystalline substrate;
4) with step 2) deposition that obtains the substrate temperature of hard magnetic layer be set at room temperature, and with the induced magnetic field direction setting of vacuum coating equipment easy axis direction conllinear to the hard magnetic layer of determining with step 3), the induced magnetic field size is 50～100 oersteds, after treating temperature stabilization, deposit first soft magnetosphere thereon;
5) keep room temperature, the induced magnetic field direction is constant, adopts conventional magnetically controlled sputter method deposit the nonmagnetic metal conductive layer on first soft magnetosphere, or the method for using plasma oxidation, directly deposits or reactive sputtering depositing insulating layer on first soft magnetosphere;
For insulating barrier is Al
2O
3Or during AlN: at first adopt the method for conventional magnetron sputtering on first soft magnetosphere, to form the Al layer that a thickness is 0.8～1.5nm, then sample is imported in another chamber under the condition of not destroying vacuum, feed high-purity O
2/ N
2With the mist of high-purity Ar gas, wherein O
2/ N
2With the volume ratio of Ar be 1: 3, select the Target low-power, as 10W, the method for using plasma oxidation makes this Al layer change Al into then
2O
3Or AlN layer;
For insulating barrier is MgO, Ta
2O
5Or HfO
2The time: can adopt directly deposition or of conventional magnetron sputtering at O
2Reactive sputtering obtains the corresponding insulation layer in the atmosphere;
6) keep room temperature, the induced magnetic field direction is constant, deposition second soft magnetosphere on nonmagnetic metal conductive layer or insulating barrier;
7) keep room temperature, remove induced magnetic field or keep the induced magnetic field direction constant, sedimentary cover on second soft magnetosphere.
The preparation method of above-mentioned self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention also is included in before the step 4), the ferromagnetic/antiferromagnetic coupling layer of deposition on hard magnetic layer.
The preparation method of above-mentioned self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention, described step 2) be according to conventional method, grow successively on substrate first hard magnetic layer, the second ferromagnetic/antiferromagnetic coupling layer and second hard magnetic layer obtain a compound hard magnetic layer.
The preparation method of above-mentioned self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention, described step 6) is according to conventional method, keep room temperature, the induced magnetic field direction is constant, on nonmagnetic metal conductive layer or insulating barrier, deposit the 3rd soft magnetosphere successively, the 3rd ferromagnetic/antiferromagnetic coupling layer and the 4th soft magnetosphere obtains a composite soft-magnetic layer.
Above-mentioned self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention can be used for giant magnetoresistance (GMR) device and tunneling magnetic resistance (TMR) device.
With traditional be that the magneto-resistance device of the spin valve structure of antiferromagnet pinning is compared based on Mn, above-mentioned magneto-resistance device with spin valve structure provided by the invention has following advantage:
1, the magneto-resistance device of the spin valve structure based on hard magnetic material provided by the invention is by introducing high-coercive force, the hard magnetic material of high square ratio, greatly improved the adverse field of high spinning polarizability soft magnetosphere, the rotation of the direction of magnetization does not take place in this layer in less yard scope, thereby can be used as the reference layer of spin valve structure.
2, the magneto-resistance device of the spin valve structure based on hard magnetic material provided by the invention is by introducing the antiferromagnetic coupling layer, in the adverse field that has improved the high spinning polarizability soft magnetosphere, hard magnetic layer and high spinning polarizability soft magnetosphere interact by antiferromagnetic coupling, make the direction of magnetization of the two tend to arranged anti-parallel.
3, the magneto-resistance device of the spin valve structure based on hard magnetic material provided by the invention makes this structure can stand the annealing in process of higher temperature owing to can get rid of the existence of Mn, that is to say that the thermal stability of this structure is improved.
4, the magneto-resistance device of the spin valve structure based on hard magnetic material provided by the invention since do not exist traditional Mn be the antiferromagnet minimum thickness that becomes phase restriction (just, antiferromagnetic physical efficiency produces the minimum thickness of robust pinning effect, representative value is 10nm), this structure applications in CPP structure (Current perpendicular to plane) thus spin valve structure in will provide little series resistance to improve magneto-resistor ratio greatly.
5, the magneto-resistance device of the spin valve structure based on hard magnetic material provided by the invention is by selecting suitable single crystalline substrate and resilient coating and optimized substrate growth temperature, can realize that hard magnetic layer grows with extensional mode, be formed on the high spinning polarizability soft magnetosphere on this hard magnetic layer, therefore can have the crystal phase that depends on selected hard magnetic layer crystal structure, for the exploitation of monocrystalline spin valve structure provides more wide space.
6, the hard magnetic material that uses of the magneto-resistance device of the spin valve structure based on hard magnetic material provided by the invention has adjustable crystal structure, thereby growth soft magnetosphere thereon can have abundanter crystal structure, and the flexible adjustability of soft magnetosphere crystal structure provides new expanding space for the optimization of self-rotary valve electromagnetic resistor spare.
Embodiment
Embodiment 1,
Adopting conventional magnetically controlled sputter method, is that vacuum degree is better than 10 on the substrate Si of 1mm at thickness
-5Pa, underlayer temperature is set at room temperature, and deposit thickness is the resilient coating Ru of 45nm, underlayer temperature is set at 500 ℃ then, induced magnetic field size 500Oe, deposit thickness is the hard magnetic layer Co of 8nm
30Pt
70The easy axis direction of described hard magnetic layer is according to technical scheme steps 3) described in method determine, the substrate that has been about to deposit hard magnetic layer takes out from vacuum coating equipment, change the direction of sample with respect to the VSM scanning magnetic field, it is best to choose remanence ratio from the M-H curve, and its corresponding sample easily axle provides reference for following step with VSM scanning magnetic field direction conllinear and with its demarcation on substrate; The easy axis direction of this hard magnetic layer is the direction along induced magnetic field.
Keep the induced magnetic field size and Orientation, this substrate temperature that has deposited hard magnetic layer be set at room temperature, treat temperature stabilization after, deposit thickness is the first soft magnetosphere Co of 4nm thereon
50Fe
50
Keep room temperature, the induced magnetic field size and Orientation is constant, and deposit thickness is the second soft magnetosphere Co of nonmagnetic metal conductive layer Cu, the 4nm of 2.5nm more thereon
75Fe
25, 5nm cover layer Ta, obtain the self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention.Be worth pointing out, when above-mentioned nonmagnetic metal conductive layer of deposition and cover layer, also can not adopt induced magnetic field.
This self-rotary valve electromagnetic resistor spare is worked as follows: the above-mentioned self-rotary valve electromagnetic resistor spare for preparing in vacuum coating is constant owing to the induced magnetic field direction, first soft magnetosphere is identical with the second soft magnetosphere direction of magnetization, and this moment, electric current transmitted corresponding low resistance state along face direction (or vertical face direction).When adding a less magnetic field that is antiparallel to the induced magnetic field direction (representative value is 100 oersteds), make the direction of magnetization of soft magnetosphere be inverted to outer field direction, this moment, first soft magnetosphere was opposite with the second soft magnetosphere direction of magnetization, and electric current transmits corresponding high-resistance state along face (or vertical face direction).
Embodiment 2～4,
According to the method for embodiment 1, sputter grown buffer layer, hard magnetic layer, first soft magnetosphere, nonmagnetic metal conductive layer or insulating barrier, second soft magnetosphere and cover layer successively on the substrate of 1nm, wherein hard magnetic material is selected the Co of Co composition 0.3＜x＜0.8
xPt
1-xAlloy, the composition based on the self-rotary valve electromagnetic resistor spare of hard magnetic material that makes is listed in table 1.The easy axis direction of described hard magnetic layer is determined according to the method among the embodiment, is specially the direction along induced magnetic field.
Table 1, based on the composition of the self-rotary valve electromagnetic resistor spare of hard magnetic material
| Embodiment | Substrate | Resilient coating | Hard magnetic layer | First soft magnetosphere | Separator | Second soft magnetosphere | Cover layer | ||||||
| Composition | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | |
| 1 | Si | Ru | 50 | Co 30Pt 70 | 8 | Co 50Fe 50 | 4 | Cu | 2.5 | Co 75Fe 25 | 4 | Ta | 5 |
| 2 | MgO | Cr | 40 | Co 40Pt 60 | 7 | Co 90Fe 10 | 4 | Ta 2O 5 | 1 | Co 50Fe 50 | 4 | Pt | 6 |
| 3 | LaAlO 3 | Au | 6 | Co 70Pt 30 | 8 | Co 40Fe 40B 20 | 4 | Ag | 2.6 | Co 60Fe 20B 20 | 4 | Au | 5 |
| 4 | Al 2O 3 | Pt | 30 | Co 25Pt 75 | 8 | Ni 80Fe 20 | 5 | MgO | 2.5 | Ni 80Fe 20 | 4 | Ru | 5 |
The self-rotary valve electromagnetic resistor spare of embodiment 2～4 preparations is worked by the mode of embodiment 1.
Embodiment 5～8,
According to the method for embodiment 1, on the substrate of 1nm, vacuum degree is better than 10
-5Pa, induced magnetic field size 400Oe, sputter grown buffer layer, hard magnetic layer, first soft magnetosphere, nonmagnetic metal conductive layer or insulating barrier, second soft magnetosphere and cover layer, the wherein Fe of hard magnetic material selection Fe composition 0.3＜x＜0.8 successively
xPt
1-xAlloy, the composition based on the self-rotary valve electromagnetic resistor spare of hard magnetic material that makes is listed in table 2.The easy axis direction of described hard magnetic layer is determined according to the method among the embodiment 1, is specially the direction along induced magnetic field.
Table 2, based on the composition of the self-rotary valve electromagnetic resistor spare of hard magnetic material
| Embodiment | Substrate | Resilient coating | Hard magnetic layer | First soft magnetosphere | Separator | Second soft magnetosphere | Cover layer | ||||||
| Composition | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | |
| 5 | Al 2O 3 | Ru | 5 | Fe 30Pt 70 | 8 | Co 55Fe 45 | 4 | Cu | 2.5 | Co 75Fe 25 | 4 | Ta | 5 |
| 6 | LaAlO 3 | Cr | 5 | Fe 40Pt 60 | 7 | Co 90Fe 10 | 4 | Al 2O 3 | 1 | Co 50Fe 50 | 4 | Pt | 5 |
| 7 | MgO | Ta | 6 | Fe 70Pt 30 | 8 | Co 40Fe 40B 20 | 4 | Ag | 2.6 | Co 60Fe 20B 20 | 4 | Au | 5 |
| 8 | GaAs | Pt | 5 | Fe 25Pt 75 | 8 | Ni 80Fe 20 | 5 | HfO 2 | 2.5 | Ni 78Fe 22 | 4 | Ru | 5 |
The self-rotary valve electromagnetic resistor spare of embodiment 5～8 preparations is worked by the mode of embodiment 1.
Embodiment 9～12
According to the method for embodiment 1, on the substrate of 1nm, vacuum degree is better than 10
-5Pa, the induced magnetic field size is 100Oe, successively sputter grown buffer layer, hard magnetic layer, first soft magnetosphere, nonmagnetic metal conductive layer or insulating barrier, second soft magnetosphere and cover layer, wherein hard magnetic material selection [Co (t
1Nm)/Pt (t
2Nm)]
NPeriodic multilayer film, wherein 0.3＜t
1＜0.7,0.8＜t
2＜1.5, it is 10～20 that the repetition period is counted N, and the composition based on the self-rotary valve electromagnetic resistor spare of hard magnetic material that makes is listed in table 3.The easy axis direction of described hard magnetic layer is determined according to the method among the embodiment 1, is specially the direction along induced magnetic field.
Table 3, based on the composition of the self-rotary valve electromagnetic resistor spare of hard magnetic material
| Embodiment | Substrate | Resilient coating | Hard magnetic layer | First soft magnetosphere | Separator | Second soft magnetosphere | Cover layer | |||||||
| Composition | Composition | Thickness (nm) | Composition | Cycle | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | ||
| Pt (t 2nm) | Co (t 1nm) | |||||||||||||
| 9 | Al 2O 3 | Ru | 5 | 1.0 | 0.4 | 12 | Co 55Fe 45 | 4 | Cu | 2.5 | Co 75Fe 25 | 4 | Ta | 5 |
| 10 | LaAlO 3 | Cr | 5 | 1.2 | 0.5 | 10 | Co 90Fe 10 | 4 | Al 2O 3 | 1 | Co 50Fe 50 | 4 | Pt | 5 |
| 11 | MgO | Ta | 6 | 1.3 | 0.55 | 12 | Co 40Fe 40B 20 | 4 | Ag | 2.6 | Co 60Fe 20B 20 | 4 | Au | 5 |
| 12 | Si | Pt | 5 | 1.5 | 0.7 | 18 | Ni 80Fe 20 | 5 | MgO | 2.5 | Ni 78Fe 22 | 4 | Ru | 5 |
The self-rotary valve electromagnetic resistor spare of embodiment 9～12 preparations is worked by the mode of embodiment 1.
Embodiment 13～16
Adopting conventional magnetically controlled sputter method, is that vacuum degree is better than 10 on the substrate Si of 1mm at thickness
-5Pa, induced magnetic field size 500Oe, under room temperature, deposit thickness is the resilient coating Ru of 5nm, underlayer temperature is set at 500 ℃ then, deposit thickness is the hard magnetic layer Co of 8nm
30Pt
70The easy axis direction of described hard magnetic layer is determined according to the method among the embodiment 1, is specially the direction along induced magnetic field.
Underlayer temperature is set at room temperature, treat temperature stabilization after, deposit thickness is the ferromagnetic/antiferromagnetic coupling layer Ru of 0.8nm and the first soft magnetosphere Co of 4nm successively thereon
50Fe
50
Keep room temperature, the induced magnetic field direction is constant, and deposit thickness is that nonmagnetic metal conductive layer Cu, the thickness of 2.5nm is the second soft magnetosphere Co of 4nm more thereon
75Fe
25, thickness is the cover layer Ta of 5nm, obtains the self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention.
This self-rotary valve electromagnetic resistor spare is worked as follows: Zhi Bei self-rotary valve electromagnetic resistor spare according to the method described above, because the hard magnetic layer and the first soft magnetosphere antiferromagnetic coupling, the two direction of magnetization is opposite, because the induced magnetic field direction is constant, the direction of magnetization of first soft magnetosphere and second soft magnetosphere is opposite, and this moment, electric current transmitted corresponding high-resistance state along face (or vertical face).When adding one when being antiparallel to the less magnetic field of induced magnetic field direction (representative value is 100 oersteds), the second soft magnetosphere direction of magnetization is inverted to outer magnetic field direction, and this moment, electric current transmitted corresponding low resistance state along face (or vertical face).
Embodiment 14～16
According to the method for embodiment 13, on the substrate of 1nm, vacuum degree is better than 10
-5Pa, the induced magnetic field size is 500Oe, sputter grown buffer layer, hard magnetic layer, ferromagnetic/the antiferromagnetic coupling layer, first soft magnetosphere, nonmagnetic metal conductive layer or insulating barrier, second soft magnetosphere and cover layer successively, wherein hard magnetic material is selected the Co of Co composition 0.3＜x＜0.8
xPt
1-xAlloy, the composition based on the self-rotary valve electromagnetic resistor spare of hard magnetic material that makes is listed in table 4.The easy axis direction of described hard magnetic layer is determined according to the method among the embodiment 1, is specially the direction along induced magnetic field.
Table 4, based on the composition of the self-rotary valve electromagnetic resistor spare of hard magnetic material
| Embodiment | Substrate | Resilient coating | Hard magnetic layer | Ferromagnetic/the antiferromagnetic coupling layer | First soft magnetosphere | Separator | Second soft magnetosphere | Cover layer | |||||||
| Composition | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | |
| 13 | Si | Ru | 5 | Co 30Pt 70 | 8 | Ru | 0.8 | Co 50Fe 50 | 4 | Cu | 2.5 | Co 75Fe 75 | 4 | Ta | 5 |
| 14 | MgO | Cu | 6 | Co 40Pt 60 | 9 | Ir | 0.9 | Co 90Fe 10 | 4 | Al 2O 3 | 1 | Co 50Fe 50 | 4 | Pt | 5 |
| 15 | LaAlO 3 | Cr | 5 | Co 70Pt 30 | 6 | Rh | 1.1 | Co 40Fe 40B 20 | 4 | Ag | 2.6 | Co 60Fe 20B 20 | 4 | Au | 5 |
| 16 | Al 2O 3 | Ta | 5 | Co 25Pt 75 | 10 | Cu | 0.85 | Ni 80Fe 20 | 5 | MgO | 2.5 | Ni 80Fe 20 | 4 | Ru | 5 |
The self-rotary valve electromagnetic resistor spare of embodiment 14～16 preparations is worked by the mode of embodiment 13.
Embodiment 17～20
According to the method for embodiment 13, on the substrate of 1nm, vacuum degree is better than 10
-5Pa, the induced magnetic field size is 400Oe, sputter grown buffer layer, hard magnetic layer, ferromagnetic/the antiferromagnetic coupling layer, first soft magnetosphere, nonmagnetic metal conductive layer or insulating barrier, second soft magnetosphere and cover layer successively, wherein hard magnetic material is selected the Fe of Fe composition 0.3＜x＜0.8
xPt
1-xAlloy, the composition based on the self-rotary valve electromagnetic resistor spare of hard magnetic material that makes is listed in table 5.The easy axis direction of described hard magnetic layer is determined according to the method among the embodiment 1, is specially the direction along induced magnetic field.
Table 5, based on the composition of the self-rotary valve electromagnetic resistor spare of hard magnetic material
| Embodiment | Substrate | Resilient coating | Hard magnetic layer | Ferromagnetic/the antiferromagnetic coupling layer | First soft magnetosphere | Separator | Second soft magnetosphere | Cover layer | |||||||
| Composition | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | |
| 17 | Si | Fe | 5 | Fe 30Pt 70 | 8 | Cr | 1.65 | Co 50Fe 50 | 4 | Cu | 2.5 | Co 75Fe 75 | 4 | Ta | 6 |
| 18 | MgO | Ag | 6 | Fe 40Pt 60 | 9 | Al | 1.85 | Co 90Fe 10 | 4 | Al 2O 3 | 1 | Co 50Fe 50 | 5 | Pt | 4 |
| 19 | LaAlO 3 | Cr | 5 | Fe 70Pt 30 | 6 | Pd | 1.6 | Co 40Fe 40B 20 | 5 | Ag | 2.6 | Co 60Fe 20B 20 | 4 | Au | 5 |
| 20 | Al 2O 3 | Ta | 5 | Fe 25Pt 75 | 10 | Zr | 1.7 | Ni 80Fe 20 | 5 | MgO | 2.5 | Ni 80Fe 20 | 6 | Ru | 3 |
The self-rotary valve electromagnetic resistor spare of embodiment 17～20 preparation is worked by following mode: Zhi Bei self-rotary valve electromagnetic resistor spare according to the method described above, because the hard magnetic layer and the first soft magnetosphere ferromagnetic coupling, the two direction of magnetization is identical, because the induced magnetic field direction is constant, first soft magnetosphere is identical with the direction of magnetization of second soft magnetosphere, and this moment, electric current transmitted corresponding low resistance state along face (or vertical face).When adding one when being antiparallel to the less magnetic field of induced magnetic field direction (representative value is 100 oersteds), the second soft magnetosphere direction of magnetization is inverted to outer magnetic field direction, and this moment, electric current transmitted corresponding high-resistance state along face (or vertical face).
Embodiment 21～24
According to the method for embodiment 13, on the substrate of 1nm, vacuum degree is better than 10
-5Pa, the induced magnetic field size is 100Oe, sputter grown buffer layer, hard magnetic layer, ferromagnetic/the antiferromagnetic coupling layer, first soft magnetosphere, nonmagnetic metal conductive layer or insulating barrier, second soft magnetosphere and cover layer successively, wherein hard magnetic material is selected [Co (t
1Nm)/Pt (t
2Nm)]
NPeriodic multilayer film, wherein 0.3＜t
1＜0.7,0.8＜t
2＜1.5, it is 10～20 that the repetition period is counted N, and the composition based on the self-rotary valve electromagnetic resistor spare of hard magnetic material that makes is listed in table 6.The easy axis direction of described hard magnetic layer is determined according to the method among the embodiment 1, is specially the direction along induced magnetic field.
Table 6, based on the composition of the self-rotary valve electromagnetic resistor spare of hard magnetic material
| Embodiment | Substrate | Resilient coating | Hard magnetic layer | Ferromagnetic/the antiferromagnetic coupling layer | First soft magnetosphere | Separator | Second soft magnetosphere | Cover layer | ||||||||
| Composition | Composition | Thickness (nm) | Composition | Cycle | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | ||
| Pt (t 2nm) | Co (t 1nm) | |||||||||||||||
| 21 | Si | Ru | 5 | 1.0 | 0.4 | 8 | Pt | 0.7 | Co 50Fe 50 | 4 | Cu | 2.5 | Co 75Fe 25 | 4 | Ta | 6 |
| 22 | MgO | Pt | 6 | 1.2 | 0.5 | 9 | Ag | 1.3 | Co 90Fe 10 | 4 | Al 2O 3 | 1 | Co 50Fe 50 | 5 | Pt | 4 |
| 23 | LaAlO 3 | Cr | 4 | 1.3 | 0.55 | 6 | Au | 1.0 | Co 40Fe 40B 20 | 5 | Ag | 2.6 | Co 60Fe 20B 20 | 4 | Au | 5 |
| 24 | Al 2O 3 | Ta | 5 | 1.5 | 0.7 | 10 | Ti | 0.85 | Ni 80Fe 20 | 5 | MgO | 2.5 | Ni 78Fe 22 | 6 | Ru | 3 |
The self-rotary valve electromagnetic resistor spare of embodiment 21～24 preparations is worked by the mode of embodiment 13.
Embodiment 25,
Adopt conventional magnetically controlled sputter method, at Si (100) substrate, vacuum degree is better than 10
-5Pa is heated to 600 ℃ with substrate, and deposit thickness is the resilient coating Cr of 20nm, and resulting by this method Cr layer has (100) orientation; Do not change underlayer temperature, deposit thickness is the hard magnetic layer Sm of 10nm on described Cr resilient coating
2Co
7Then underlayer temperature is set at room temperature, deposit thickness is the antiferromagnetic coupling layer Ru of 0.8nm; With size is that the induced magnetic field direction setting of 100Oe is to Si[001] axially, primary depositing thickness is the first soft magnetosphere Co of 4nm
75Fe
25, thickness is that nonmagnetic metal conductive layer Cu, the thickness of 2.5nm is the second soft magnetosphere Co of 4nm
75Fe
25, and thickness be the cover layer Ta of 5nm.
Wherein, the direction of induced magnetic field is to determine as follows:
1) at Si (100) substrate, vacuum degree is better than 10
-5Pa is heated to 600 ℃ with substrate, and deposit thickness is the resilient coating Cr of 20nm, and resulting by this method Cr layer has (100) orientation; Underlayer temperature is returned to room temperature, and deposit thickness is the hard magnetic layer Sm of 10nm on described Cr resilient coating
2Co
7Deposit thickness is the cover layer Ta of 5nm on described hard magnetic layer.
2) sample is taken out from vacuum, go up its magnetization curve of measurement at VSM (vibrating specimen magnetometer), if Si (100) substrate [100] direction of principal axis β is a zero degree with respect to the VSM magnetic direction, in 0～90 degree, choose β=0,15,30,45,60,75,90, observe relatively more corresponding magnetization curve, find out the curve of squareness good (dM/dH (Hc) is big), hard magnetic layer can be determined in corresponding β angle.
The Sm that obtains by said method
2Co
7Present good crystal structure and uniaxial anisotropy, be specially Si[001] ‖ Cr[011] ‖ Sm
2Co
7[1 100], especially, described Sm
2Co
7[1 100] direction is its easy axis direction.
The self-rotary valve electromagnetic resistor spare of this embodiment preparation is worked by the mode of embodiment 13.
Embodiment 26,
Adopt conventional magnetically controlled sputter method, at MgO (100) substrate, vacuum degree is better than 10
-5Pa is heated to 600 ℃ with substrate, and deposit thickness is the resilient coating Cr of 40nm, and resulting by this method Cr layer has (100) orientation; Underlayer temperature is set to 420 ℃, and deposit thickness is the hard magnetic layer SmCo of 10nm on described Cr resilient coating
5The easy axis direction of described hard magnetic layer is determined according to the method among the embodiment 1, is specially along MgO[110] direction of principal axis.Underlayer temperature is set to room temperature, and deposit thickness is the antiferromagnetic coupling layer Ru of 0.8nm on described hard magnetic layer; With size is that the induced magnetic field of 100Oe is set to MgO[110] axially, deposit thickness is the first soft magnetosphere Co of 10nm
2MnSi; Thickness is the nonmagnetic metal conductive layer Au of 2.5nm; Thickness is the second soft magnetosphere Co of 5nm
60Fe
20B
20And thickness is the cover layer Ta of 5nm.
The self-rotary valve electromagnetic resistor spare of this embodiment preparation is worked by the mode of embodiment 13.
Embodiment 27,
Adopt the method for conventional magnetron sputtering, vacuum degree is better than 10
-5Pa, underlayer temperature is set in room temperature, induced magnetic field size 500Oe, be deposition successively on the Si substrate of 1mm at thickness: thickness is the resilient coating Mo of 10nm; Thickness is the hard magnetic layer Nd of 16nm
14Fe
78B
8Substrate is risen to 650 ℃ with 30 ℃/min of heating rate, made the sample in-situ annealing 1 hour; The easy axis direction of described hard magnetic layer is determined according to the method among the embodiment 1, is specially the direction along induced magnetic field; Substrate is set to room temperature with 30 ℃/min of rate of temperature fall, successively deposition: thickness is the first soft magnetosphere Fe of 4nm
25Co
75Thickness is the nonmagnetic metal conductive layer Cu of 2.5nm; Thickness is the two soft magnetosphere Co of 4nm
90Fe
10And thickness is the cover layer Ta of 4nm.
The self-rotary valve electromagnetic resistor spare of this embodiment preparation is worked by the mode of embodiment 1.
Embodiment 28～31
According to the method for embodiment 27, on the substrate of 1nm, vacuum degree is better than 10
-5Pa, the induced magnetic field size is 500Oe, sputter grown buffer layer, hard magnetic layer, first soft magnetosphere, nonmagnetic metal conductive layer or insulating barrier, second soft magnetosphere and cover layer successively, wherein hard magnetic material is selected NdFeB, wherein the atomic percent of Nd is at 14～30at%, the B atomic percent is at 6～8at%, and all the other are Fe, and the composition based on the self-rotary valve electromagnetic resistor spare of hard magnetic material that makes is listed in table 7.The easy axis direction of described hard magnetic layer is determined according to the method among the embodiment 1, is specially the direction along induced magnetic field.
Table 7, based on the composition of the self-rotary valve electromagnetic resistor spare of hard magnetic material
| Embodiment | Substrate | Resilient coating | Hard magnetic layer | Underlayer temperature T (℃) | First soft magnetosphere | Separator | Second soft magnetosphere | Cover layer | ||||||
| Composition | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | ||
| 28 | Si | Mo | 10 | Nd 14Fe 78B8 | 16 | 650 | Fe 25Co 75 | 4 | Cu | 2.5 | Co 90Fe 10 | 5 | Ta | 4 |
| 29 | MgO | Ru | 5 | Nd 18Fe 75B 7 | 18 | 700 | NiMnSb | 6 | Ag | 2.6 | NiMnSb | 4 | Pt | 4 |
| 30 | Al1 2O 3 | Zr | 6 | Nd 22Fe 72B 6 | 17 | 780 | Co 2MnSi | 8 | HfO 2 | 1.5 | Co 40Fe 40B 20 | 6 | Ru | 5 |
| 31 | SrTiO 3 | Nb | 8 | Nd 28Fe 66B 6 | 12 | 620 | Co 2Cr 0.6Fe 0.4Al | 5 | Cr | 2.4 | Co 50Fe 50 | 4 | Ta | 4 |
Embodiment 28～31 works by embodiment 1 described mode.
Embodiment 32
Adopting conventional magnetically controlled sputter method, is that vacuum degree is better than 10 on the substrate Si of 1mm at thickness
-5Pa, underlayer temperature is set at room temperature, and deposit thickness is the resilient coating Ru of 45nm, underlayer temperature is set at 500 ℃ then, induced magnetic field size 500Oe, deposit thickness is the first hard magnetic layer Co of 8nm
50Pt
50The easy axis direction of described hard magnetic layer is according to technical scheme steps 3) described in method determine, the substrate that has been about to deposit hard magnetic layer takes out from vacuum coating equipment, change the direction of sample with respect to the VSM scanning magnetic field, it is best to choose remanence ratio from the M-H curve, and its corresponding sample easily axle provides reference for following step with VSM scanning magnetic field direction conllinear and with its demarcation on substrate; The easy axis direction of this hard magnetic layer is the direction along induced magnetic field.
Keep underlayer temperature, deposit thickness is second ferromagnetic/antiferromagnetic coupling layer Ru of 0.8nm on described hard magnetic layer, and then with the induced magnetic field turnback, deposit thickness is the second hard magnetic layer Co of 6nm
50Pt
50
Keep the induced magnetic field size and Orientation, this substrate temperature that has deposited hard magnetic layer be set at room temperature, treat temperature stabilization after, deposit thickness is the first soft magnetosphere Co of 4nm thereon
75Fe
25
Keep room temperature, the induced magnetic field size and Orientation is constant, and deposit thickness is the second soft magnetosphere Co of nonmagnetic metal conductive layer Cu, the 4nm of 2.5nm more thereon
50Fe
50, 5nm cover layer Ta, obtain the self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention.Be worth pointing out, when above-mentioned nonmagnetic metal conductive layer of deposition and cover layer, also can not adopt induced magnetic field.
This embodiment works by embodiment 1 described mode.
Embodiment 33～35
According to the method for embodiment 32, the composition based on the self-rotary valve electromagnetic resistor spare of hard magnetic material that makes is listed in table 8.
Embodiment 36
Adopting conventional magnetically controlled sputter method, is that vacuum degree is better than 10 on the substrate Si of 1mm at thickness
-5Pa, underlayer temperature is set at room temperature, and deposit thickness is the resilient coating Ru of 45nm, underlayer temperature is set at 500 ℃ then, induced magnetic field size 500Oe, deposit thickness is the first hard magnetic layer Co of 8nm
40Pt
60The easy axis direction of described hard magnetic layer is according to technical scheme steps 3) described in method determine, the substrate that has been about to deposit hard magnetic layer takes out from vacuum coating equipment, change the direction of sample with respect to the VSM scanning magnetic field, it is best to choose remanence ratio from the M-H curve, and its corresponding sample easily axle provides reference for following step with VSM scanning magnetic field direction conllinear and with its demarcation on substrate; The easy axis direction of this hard magnetic layer is the direction along induced magnetic field.
Keep underlayer temperature, deposit thickness is second ferromagnetic/antiferromagnetic coupling layer Ru of 0.8nm on described hard magnetic layer, and then with the induced magnetic field turnback, deposit thickness is second hard magnetic layer, 2 Co of 6nm
40Pt
60
Keep the induced magnetic field size and Orientation, this substrate temperature that has deposited hard magnetic layer be set at room temperature, treat temperature stabilization after, deposit thickness is the ferromagnetic/antiferromagnetic coupling layer Ru of 8 dusts and the first soft magnetosphere Co that thickness is 4nm successively thereon
75Fe
25
Keep room temperature, the induced magnetic field size and Orientation is constant, and deposit thickness is the nonmagnetic metal conductive layer Cu of 2.5nm more thereon.
Keep room temperature, the induced magnetic field size and Orientation is constant, and deposit thickness is the 3rd soft magnetism FM3 layer Co of 6nm thereon
50Fe
50, thickness is that the 3rd ferromagnetic/antiferromagnetic coupling layer AP3 layer Ru, the thickness of 0.8nm is the 4th soft magnetism FM4 layer Co of 4nm
50Fe
50Above-mentioned three layers of FM3/AP3/FM4 constitute the composite soft-magnetic layer, and it is a compound free layer.FM3 layer and FM4 layer are by AP3 layer antiferromagnetic coupling.
Keep room temperature, the induced magnetic field size and Orientation is constant, and deposit thickness is the cover layer Ta of 4nm thereon, obtains the self-rotary valve electromagnetic resistor spare based on hard magnetic material provided by the invention.Be worth pointing out, when above-mentioned nonmagnetic metal conductive layer of deposition and cover layer, also can not adopt induced magnetic field.
Embodiment 37～40
According to the method for embodiment 36, the composition based on the self-rotary valve electromagnetic resistor spare of hard magnetic material that makes is listed in table 9.
This self-rotary valve electromagnetic resistor spare is worked as follows: the above-mentioned self-rotary valve electromagnetic resistor spare for preparing in vacuum coating, if the induced magnetic field direction of the described HM1 layer of regulation preparation is for to the right, because HM1 layer and HM2 layer antiferromagnetic coupling, the HM2 layer and the first soft magnetosphere antiferromagnetic coupling, the direction of magnetization of HM1 is for left, the first soft magnetosphere direction of magnetization is for to the right, because the FM3 layer thickness is greater than the thickness of FM4 layer in the described composite soft-magnetic layer, and FM3 layer and FM4 layer antiferromagnetic coupling, so the FM3 layer direction of magnetization to the right, the FM4 layer direction of magnetization left.Because resistance value depends near first soft magnetosphere of described separator and the relative direction of magnetization of FM3 layer.First soft magnetosphere is identical with the direction of magnetization of FM3 layer when not adding external magnetic field, and electric current transmits corresponding low resistance state along face direction (or vertical face direction).When adding a less magnetic field that is antiparallel to the induced magnetic field direction (representative value is 100 oersteds), make that the direction of magnetization of FM3 layer is inverted to outer magnetic field direction in the described compound free layer, the FM4 layer owing to and FM3 layer antiferromagnetic coupling keep the antiparallel direction of magnetization with FM3.This moment, first soft magnetosphere was opposite with the FM3 layer direction of magnetization, and electric current transmits corresponding high-resistance state along face (or vertical face direction).
Table 8, based on the composition of the self-rotary valve electromagnetic resistor spare of hard magnetic material
| Embodiment | Substrate | Resilient coating | Compound hard magnetic layer | Underlayer temperature T (℃) | First soft magnetosphere | Separator | Second soft magnetosphere | Cover layer | ||||||||||
| Composition | Thickness (nm) | HM1 | AP2 | HM3 | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | ||||||
| Composition | Thickness (nm) | Composition | Thickness (nm) | Composition | Thickness (nm) | |||||||||||||
| 32 | Si | Mo | 10 | Nd 14Fe 78B 8 | 14 | Ru | 0.8 | Nd 14Fe 78B 8 | 16 | 650 | Fe 25Co 75 | 4 | Cu | 2.5 | Fe 25Co 75 | 4 | Ta | 4 |
| 33 | MgO | Ru | 5 | Fe 50Pt 50 | 16 | Rh | 0.9 | Fe 50Pt 50 | 18 | 700 | NiMnSb | 6 | Ag | 2.6 | NiMnSb | 4 | Pt | 4 |
| 34 | Al 2O 3 | Zr | 6 | SmCo 5 | 14 | Ir | 1.2 | SmCo 5 | 17 | 650 | Co 2MnSi | 8 | HfO 2 | 1.5 | Co 2MnSi | 5 | Ru | 5 |
| 35 | SrTiO 3 | Nb | 8 | Sm 2Co 7 | 9 | Pd | 0.95 | Sm 2Co 7 | 12 | 620 | Co 2Cr 0.6Fe 0.4Al | 5 | Cr | 2.4 | Co 2Cr 0.6Fe 0.4Al | 4 | Ta | 4 |
Table 9, based on the composition of the self-rotary valve electromagnetic resistor spare of hard magnetic material
| Embodiment | Substrate | Resilient coating | Compound hard magnetic layer | Underlayer temperature T (℃) | Ferromagnetic/the antiferromagnetic coupling layer | First soft magnetosphere | Separator | The composite soft-magnetic layer | Cover layer | |||||||||||||||
| Composition | Thickness nm | HM1 | AP2 | HM3 | Composition | Thickness nm | Composition | Thickness nm | Composition | Thickness nm | FM3 | AP3 | FM4 | Composition | Thickness nm | |||||||||
| Composition | Thickness nm | Composition | Thickness nm | Composition | Thickness nm | Composition | Thickness nm | Composition | Thickness nm | Composition | Thickness nm | |||||||||||||
| 32 | Si | Mo | 10 | Nd 14Fe 78B 8 | 14 | Ru | 0.8 | Nd 14Fe 78B 8 | 16 | 650 | Ru | 0.8 | Fe 25Co 75 | 4 | Cu | 2.5 | Co 50Fe 50 | 4 | Ru | 0.8 | Co 50Fe 50 | 3 | Ta | 4 |
| 33 | MgO | Ru | 5 | Fe 50Pt 50 | 16 | Rh | 0.9 | Fe 50Pt 50 | 18 | 700 | Rh | 2.1 | NiMnSb | 6 | Ag | 2.6 | Co 40Fe 40B 20 | 5 | Rh | 0.9 | Co 40Fe 40B 20 | 3.5 | Pt | 4 |
| 34 | Al 2O 3 | Zr | 6 | SmCo 5 | 14 | Ir | 1.2 | SmCo 5 | 17 | 650 | Ir | 1.2 | Co 2MnSi | 8 | HfO 2 | 1.5 | Co 2MnSi | 8 | Ir | 1.1 | Co 2MnSi | 6.5 | Ru | 5 |
| 35 | SrTiO 3 | Nb | 8 | Sm 2Co 7 | 9 | Pd | 0.95 | Sm 2Co 7 | 12 | 620 | Pd | 0.9 | Co 2Cr 0.6Fe 0.4Al | 5 | Cr | 2.4 | Co 2Cr 0.6Fe 0.4Al | 9 | Pd | 0.9 | Co 2Cr 0.6Fe 0.4Al | 6 | Ta | 4 |
Claims (10)
1, a kind of self-rotary valve electromagnetic resistor spare based on hard magnetic material comprises: a substrate and on resilient coating, on described resilient coating, deposited hard magnetic layer, first soft magnetosphere, nonmagnetic metal conductive layer or insulating barrier, second soft magnetosphere and cover layer successively.
2, the self-rotary valve electromagnetic resistor spare based on hard magnetic material as claimed in claim 1 is characterized in that:
Described substrate is MgO, Al
2O
3, GaAs, SrTiO
3, LaAlO
3, or Si;
Described resilient coating is Ru, Cr, and Cu, Pt, Au, Ag, Fe, Ta, Mo, Zr, Nb or their mixture are formed; The thickness of described resilient coating is 5～50nm;
Described hard magnetic layer is Co
xPt
1-xAlloy, wherein 0.3＜x＜0.8; Or [Co (t
1Nm)/Pt (t
2Nm)]
NPeriodic multilayer film, wherein 0.3＜t
1＜0.7,0.8＜t
2＜1.5, N represents number of cycles; Or SmCo
yAlloy, wherein 3.0＜y＜9.0; Or NdFeB permanent magnetism, wherein Nd content is 14～30at%, and B content is 6～8at%, and all the other are Fe; Or Fe
zPt
1-zAlloy, wherein 0.3＜z＜0.8; Described hard magnetic layer thickness is 4～20nm;
Described soft magnetosphere is: Co, Fe, Ni or their mixture; Or amorphous Co
100-x-yFe
xB
y, 0＜x＜100,0＜y≤20 wherein; Or Heusler alloy; The thickness of described soft magnetosphere is 3～10nm;
Described nonmagnetic metal conductive layer is Ru, Cu, and Ag, Au, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc or their mixture are formed; Described nonmagnetic metal conductive layer thickness is 2～5nm;
Described insulating barrier is: Al
2O
3, AlN, MgO, Ta
2O
5, HfO
2The thickness of described insulating barrier is 0.7nm～3nm;
Described cover layer is Pt, Ru, and Ta or their mixture are formed; Described tectal thickness is 4～6nm.
3, the self-rotary valve electromagnetic resistor spare based on hard magnetic material as claimed in claim 1 is characterized in that: also be included in the ferromagnetic/antiferromagnetic coupling layer between the hard magnetic layer and first soft magnetosphere.
4, the self-rotary valve electromagnetic resistor spare based on hard magnetic material as claimed in claim 3 is characterized in that: described ferromagnetic/the antiferromagnetic coupling layer is Ru, Au, Cu, Ag, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc, Ir, Rh or their mixture are formed; Described ferromagnetic/thickness of antiferromagnetic coupling layer is 0.7～2.5nm.
5, the self-rotary valve electromagnetic resistor spare based on hard magnetic material as claimed in claim 1 is characterized in that: described hard magnetic layer is by the first hard magnetic material layer, the compound hard magnetic layer that the second ferromagnetic/antiferromagnetic coupling layer and the second hard magnetic material layer are formed;
Hard magnetic material layer in the described compound hard magnetic layer is Co
xPt
1-xAlloy, wherein 0.3＜x＜0.8; Or [Co (t
1Nm)/Pt (t
2Nm)]
NPeriodic multilayer film, wherein 0.3＜t
1＜0.7,0.8＜t
2＜1.5, N represents number of cycles; Or SmCo
yAlloy, wherein 3.0＜y＜9.0; Or NdFeB permanent magnetism, wherein Nd content is 14～30at%, and B content is 6～8at%, and all the other are Fe; Or Fe
zPt
1-zAlloy, wherein 0.3＜z＜0.8; The thickness of each hard magnetic layer is 4～20nm;
Second ferromagnetic/antiferromagnetic coupling layer in the described compound hard magnetic layer is Ru, Au, and Cu, Ag, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc, Ir, Rh or their mixture are formed; Its thickness is 0.7～2.5nm.
6, the self-rotary valve electromagnetic resistor spare based on hard magnetic material as claimed in claim 1 is characterized in that: described second soft magnetosphere is by the 3rd soft magnetosphere, the composite soft-magnetic layer that the 3rd ferromagnetic/antiferromagnetic coupling layer and the 4th soft magnetosphere constitute;
Soft magnetosphere in the described composite soft-magnetic layer is: Co, Fe, Ni or their mixture; Or amorphous Co
100-x-yFe
xB
y, 0＜x＜100,0＜y≤20 wherein; Or Heusler alloy; The thickness of each soft magnetosphere is 3～10nm;
The 3rd ferromagnetic/antiferromagnetic coupling layer in the described composite soft-magnetic layer is Ru, Au, and Cu, Ag, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc, Ir, Rh or their mixture are formed; Its thickness is 0.7～2.5nm.
7, the preparation method of the described self-rotary valve electromagnetic resistor spare based on hard magnetic material of a kind of claim 1, it forms resilient coating, hard magnetic layer, first soft magnetosphere, nonmagnetic metal conductive layer or insulating barrier, second soft magnetosphere and cover layer successively for adopt the method for vacuum coating on single crystalline substrate, and the vacuum degree of described vacuum coating is better than 10
-5Pa; Specifically comprise following step:
1) adopt conventional magnetically controlled sputter method on substrate, to prepare resilient coating;
2) underlayer temperature is set in 300～800 ℃, the induced magnetic field that adds a size and be 100～500Oe adopts conventional magnetically controlled sputter method growth hard magnetic layer on resilient coating;
3) with step 2) deposition that obtains the substrate of hard magnetic layer from vacuum coating equipment, take out, adopt VSM to make the easy magnetizing axis of hard magnetic layer;
4) with step 2) deposition that obtains the substrate temperature of hard magnetic layer be set at room temperature, and with the induced magnetic field direction setting of vacuum coating equipment easy axis direction conllinear to the hard magnetic layer of determining with step 3), the induced magnetic field size is 50～100 oersteds, after treating temperature stabilization, deposit first soft magnetosphere thereon;
5) keep room temperature, the induced magnetic field direction is constant, adopts conventional magnetically controlled sputter method deposit the nonmagnetic metal conductive layer on first soft magnetosphere, or the method for using plasma oxidation, directly deposits or reactive sputtering depositing insulating layer on first soft magnetosphere;
6) keep room temperature, the induced magnetic field direction is constant, deposition second soft magnetosphere on nonmagnetic metal conductive layer or insulating barrier;
7) keep room temperature, remove induced magnetic field or keep the induced magnetic field direction constant, sedimentary cover on second soft magnetosphere.
8, the preparation method of the self-rotary valve electromagnetic resistor spare based on hard magnetic material as claimed in claim 7 is characterized in that: also be included in before the step 4) the ferromagnetic/antiferromagnetic coupling layer of deposition on hard magnetic layer.
9, the preparation method of the self-rotary valve electromagnetic resistor spare based on hard magnetic material as claimed in claim 7, it is characterized in that: described step 2) be according to conventional method, grow successively on substrate first hard magnetic layer, the second ferromagnetic/antiferromagnetic coupling layer and second hard magnetic layer obtain a compound hard magnetic layer.
10, the preparation method of the self-rotary valve electromagnetic resistor spare based on hard magnetic material as claimed in claim 7, it is characterized in that: described step 6) is according to conventional method, keep room temperature, the induced magnetic field direction is constant, on nonmagnetic metal conductive layer or insulating barrier, deposit the 3rd soft magnetosphere successively, the 3rd ferromagnetic/antiferromagnetic coupling layer and the 4th soft magnetosphere obtains a composite soft-magnetic layer.
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|---|---|---|---|
| CNB2005100865233A CN100452471C (en) | 2005-09-27 | 2005-09-27 | Self-rotary valve electromagnetic resistor based on hard magnetic material and its production |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100865233A CN100452471C (en) | 2005-09-27 | 2005-09-27 | Self-rotary valve electromagnetic resistor based on hard magnetic material and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1941448A true CN1941448A (en) | 2007-04-04 |
| CN100452471C CN100452471C (en) | 2009-01-14 |
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ID=37959377
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| CNB2005100865233A Expired - Fee Related CN100452471C (en) | 2005-09-27 | 2005-09-27 | Self-rotary valve electromagnetic resistor based on hard magnetic material and its production |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104801720A (en) * | 2015-03-23 | 2015-07-29 | 湖北大学 | Production method and application of half-metallic Heusler alloy Co2FeAl nanowire |
| CN105954692A (en) * | 2016-04-26 | 2016-09-21 | 中国科学院物理研究所 | Magnetic sensor with improved sensitivity and linearity |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH09274710A (en) * | 1996-04-04 | 1997-10-21 | Fujitsu Ltd | Spin valve magneto-resistive effect head, its manufacture and magnetic recorder |
| US5966323A (en) * | 1997-12-18 | 1999-10-12 | Motorola, Inc. | Low switching field magnetoresistive tunneling junction for high density arrays |
| JP2005534198A (en) * | 2002-07-26 | 2005-11-10 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Magnetoresistive layer system and sensor element comprising the layer system |
| JP3836788B2 (en) * | 2002-12-26 | 2006-10-25 | 株式会社東芝 | Magnetoresistive element, magnetoresistive head, and magnetic recording / reproducing apparatus |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104801720A (en) * | 2015-03-23 | 2015-07-29 | 湖北大学 | Production method and application of half-metallic Heusler alloy Co2FeAl nanowire |
| CN105954692A (en) * | 2016-04-26 | 2016-09-21 | 中国科学院物理研究所 | Magnetic sensor with improved sensitivity and linearity |
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