CN1941399A - Organic electroluminescent display device - Google Patents
Organic electroluminescent display device Download PDFInfo
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- CN1941399A CN1941399A CN 200610139363 CN200610139363A CN1941399A CN 1941399 A CN1941399 A CN 1941399A CN 200610139363 CN200610139363 CN 200610139363 CN 200610139363 A CN200610139363 A CN 200610139363A CN 1941399 A CN1941399 A CN 1941399A
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- photomask
- organic electroluminescence
- display device
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- film
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Abstract
The invention prevents a photocurrent due to external light and a variation in characteristics of transistors or a failure by a short circuit due to the influence of a back channel. A light shield film (70) made of a nonconductive material is formed on an insulation substrate (10). A back gate insulation film (11) is formed covering the light shield film (70). An active layer (33) is formed on this back gate insulation film (11). A gate insulation film (12) is formed covering the active layer (33), and a gate electrode (31) is formed on the gate insulation film (12). The light shield film (70) is disposed covering the active layer (33) with the back gate insulation film (11) interposed therebetween, having a function of shielding the active layer (33) from external light entering through the insulation substrate (10).
Description
Technical field
[0001] the present invention relates to the organic electroluminescence display device and method of manufacturing same that a kind of each pixel all possesses thin-film transistor.
Background technology
[0002] in recent years, use the organic EL display of organic electroluminescence assembly (being designated hereinafter simply as [organic el element]) to be developed to replace CRT and LCD display unit as the self-luminous assembly.Especially develop, each pixel possesses active-matrix (active matrix) the type organic EL display of the thin-film transistor (being designated hereinafter simply as [TFT]) that corresponding video signal drives organic el element.
[0003] TFT is formed on the glass substrate.Therefore, radiation by this glass substrate and bottom-emission (Bottom Emission) type organic EL display from the light of organic el element in, extraneous light is incident upon the active layers of TFT by glass substrate.If this extraneous light is strong, then in active layers, excite charge carrier (carrier), photoelectric current (leakage current during standby (offleak current)) can be flowed through between the source drain, owing to produce crosstalk (Cross talk) etc., so there is the problem of demonstration contrast deterioration.
[0004] therefore, such as patent documentation 1 record, known have a kind ofly by being provided for covering the photomask of the extraneous light that is incident upon the TFT active layers, suppresses the technology of the generation of photoelectric current.
Patent documentation 1: the spy opens the 2004-134356 communique
[0005] yet, if form photomask, have because the oppositely influence of raceway groove (back channel) and characteristic (for example critical value) change that produces TFT with electric conducting material, perhaps produce and show bad problem because of the short circuit of photomask and active layers.
Summary of the invention
[0006] therefore, organic electroluminescence display device and method of manufacturing same involved in the present invention is characterized in that: possessing has: be formed on the insulated substrate, emit the electroluminescence part of light by the aforementioned dielectric substrate; And the thin-film transistor of the aforementioned electroluminescence part of driving, aforementioned thin-film transistor possesses and has: be formed at the semiconductor layer on the aforementioned dielectric substrate; Be formed on the aforementioned dielectric substrate, be used to cover the photomask that is incident upon the extraneous light of aforesaid semiconductor layer by the aforementioned dielectric substrate by non-conducting material constituted; Be sandwiched in the back grid dielectric film between aforementioned photomask and the aforesaid semiconductor layer; The gate insulating film that forms in the mode of the channel region that covers the aforesaid semiconductor layer; And be formed at gate electrode on the aforementioned gate insulating film.
[0007] according to organic electroluminescence display device and method of manufacturing same involved in the present invention, because the photomask that is covered the extraneous light of the semiconductor layer that is incident upon thin-film transistor by made being used to of non-conducting material is set, so can suppress the photoelectric current that produces because of extraneous light, can prevent that influence because of reverse raceway groove from causing the change and the poor short circuit of transistor characteristic simultaneously.Can prevent to show bad by said structure.
Description of drawings
[0023] Fig. 1 is the plane graph of the pixel of the related organic EL display of the present invention the 1st embodiment.
Fig. 2 (a) and Fig. 2 (b) are the pixel cutaway views of the related organic EL display of the present invention the 1st embodiment.
Fig. 3 is the amplification view of the pixel selection of Fig. 1 with TFT.
Fig. 4 is the pixel planes figure of the related organic El device of the present invention the 2nd embodiment.
Fig. 5 is the pixel cutaway view of the related organic El device of the present invention the 2nd embodiment.
Fig. 6 is the graph of relation between the cut-off current that produces when being incident upon the TFT active layers of the thickness of photomask and extraneous light.
[0024] [primary clustering symbol description]
10 insulated substrates, 11 back grid dielectric films
12 gate insulating films, 15 interlayer dielectrics
17 complanation dielectric films, 30 pixel selection TFT
31 gate electrodes, 32 gate insulating films
33 active layers 33c, 43c channel region
33d, 43d drain electrode 33s, 43s source electrode
36 drain electrodes 40 drive uses TFT
41 gate electrodes, 43 active layers
51 signal lines, 52 utmost point holding wires
53 driving power supply lines 54 keep capacitance electrode line
55 capacitance electrodes 56 keep electric capacity
60 organic el elements, 61 anode layers
62 hole transmission layers, 63 luminescent layers
64 electron transfer layers, 65 cathode layers
70,80 photomasks, 100 pixels
Embodiment
[the 1st embodiment]
[0008] follows, the pixel structure about the related organic EL display of the embodiment of the invention is described.Fig. 1 is the pixel planes figure of organic EL display, and Fig. 2 (a) is the cutaway view of A-A line in Fig. 1, and Fig. 2 (b) is the cutaway view of B-B line in Fig. 1.
[0009] as shown in Figure 1, corresponding signal line 51 is formed with pixel 100 with the crosspoint of drain signal line 52, and these pixels 100 are with rectangular configuration.Dispose in the pixel 100: organic el element 60; The pixel selection that is used to control the sequential that supplies an electric current to this organic el element 60 with the TFT table and in 30; Supply an electric current to the driving TFT 40 of organic el element 60; And maintenance electric capacity 56.
[0010] pixel selection is the capacitance electrode 55 that constitutes electric capacity with source electrode 33s double as between maintenance capacitance electrode line 54 of TFT 30, be connected to the gate electrode 41 that drives with TFT 40 simultaneously, drive the anode layer 61 that is connected to organic el element 60 with the source electrode 43s of TFT 40, the opposing party 43d that drains is connected in the driving power supply line 53 that is supplied to organic el element 60 current sources.
[0011] moreover, keep capacitance electrode line 54 and signal line 51 configured in parallel.This maintenance capacitance electrode line 54 is made of institutes such as chromium, via gate insulating film 12, with capacitance electrode 55 that the source electrode 33s of TFT 30 is connected between be formed for accumulating the electric capacity of electric charge.This maintenance electric capacity 56 is used to keep being applied to driving be provided with the voltage on the gate electrode 41 of TFT 40.
[0012] then, with reference to Fig. 2 above-mentioned pixel selection TFT 30 is described.On the insulated substrate 10 that constitutes by quartz glass, alkali-free glass etc., form photomask 70 by non-conductive material constituted.Non-conducting material is amorphous silicon (amorphous silicon is hereinafter referred to as [a-Si]) preferably, but in addition also can be silicon nitride thing (SiNx) or contain epoxy resin of pigment such as black etc.The photomask 70 that is made of a-Si amasss method (chemical vapordeposition by chemical gaseous phase Shen; CVD) etc. the a-Si film is given film forming, and make by patterning (Patterning).Afterwards, form to cover photomask 70 and by SiO
2The back grid dielectric film 11 that individual layer or laminated film constituted of film, SiNx film.
[0013] on this back grid dielectric film 11, forms the a-Si film by CVD method etc. once more.To this a-Si film irradiating laser, its dissolving is recrystallized being called polysilicon film (hereinafter referred to as [p-Si film]), and with this p-Si film as active layers 33.On this active layers 33, be formed with SiO
2The individual layer of film, SiNx film or laminated film with as gate insulating film 12, and are formed with on this gate insulating film 12 by Cr (chromium), the Mo gate electrodes that refractory metal constituted 31 such as (molybdenums).The active layers 33 of gate electrode 31 belows becomes channel region 33c.
[0014] dispose aforementioned photomask 70 in the mode that back grid dielectric film 11 is sandwiched in therebetween and covers active layers 33, its effect is to cover the extraneous light that will be incident upon active layers 33 by insulated substrate 10.The photoelectric current that produces because of extraneous light, owing to mainly result from the edge of TFT channel region 33c, so photomask 70 preferably, as shown in Figure 3,2 μ m are all expanded coming up than the edge of channel region 33c in its each edge, thereby improve shaded effect.
[0015] in addition, when photomask 70 is made of a-Si, its thickness preferably 250A above, below the 600A.It is in order to ensure shading rate that thickness is set at more than the 250A; Thickness is set at below the 600A, be owing to understand variation with the lining of back grid dielectric film during the thickness thickening, and when making the active layers crystallization by laser radiation, in dissolving, the process that recrystallizes, it is inhomogeneous and be easy to generate the bad situations such as broken string that cause because of the difference of height of photomask that thickness can become.
[0016] in addition, on whole on gate insulating film 12 and the active layers 33, form with SiO
2Film, SiN film and SiO
2The interlayer dielectric 15 of the sequential laminating of film.Be provided with drain electrode 36 (drain signal line 52) at interlayer dielectric 15, the contact hole that this drain electrode 36 is provided with at correspondence drain electrode 33d is filled with Al metals such as (aluminium).In addition, on interlayer dielectric 15, be formed with driving power supply line 53.On this driving power supply line 53, be formed with by organic resin and constitute and be used to make the surface to be the complanation dielectric film 17 on plane.
[0017] then, describe with TFT 40 driving with reference to Fig. 2 (b).On aforementioned dielectric substrate 10, be formed with the active layers 43 that its polycrystallization is formed by to a-Si film irradiating laser in regular turn, gate insulating film 12, and by gate electrodes that refractory metal constituted 41 such as Cr, Mo, this active layers 43 is provided with channel region 43c, and source electrode 43s that is provided with in the both sides of this channel region 43c and drain electrode 43d.In addition, on whole on gate insulating film 12 and the active layers 43, form interlayer dielectric 15, fill metals such as Al by the contact hole that is provided with at correspondence drain electrode 43d, thereby configuration is connected in the driving power supply line 53 of driving power.And on whole, be formed with complanation dielectric film 17.And, forming contact hole in the position of the corresponding source electrode 43s of this complanation dielectric film 17, the transparency electrode that is made of ITO that will contact with source electrode 43s by this contact hole that is the anode layer 61 of organic el element are arranged on the complanation dielectric film 17.This anode layer 61 separates formation at each display pixel with island.
[0018] organic el element 60 is the structures that form according to the following order lamination: by ITO (indium tin oxide; Indium Tin Oxide) anode layer that transparency electrode constituted 61 such as; Comprise by MTDATA (4, two (the 3-methyl phenyl phenyl amino) biphenyl of 4-) (4,4-bis (3-methylphenylphenylamino) biphenyl) the 1st hole transmission layer that is constituted, and by TPD (4,4,4-three (3-methyl phenyl phenyl amino) triphenylamine) (4,4,4-tris (3-methylphenylphenyl amino)) hole-transporting layer 62 of the 2nd hole-transporting layer that is constituted triphenylamine); The luminescent layer 63 that is constituted by the Bebq2 that contains quinoline a word used for translation (two) ketone (Quinacridone) derivative (10-benzo [h] quinoline-beryllium complex) (10-benzo[h] quinolinol-berylliumcomplex); By the electron transfer layer 64 that Bebq2 constituted; And the cathode layer 65 that constituted of magnesium indium alloy or aluminium or aluminium alloy.Organic el element 60 in luminescent layer inside will from anode layer 61 injected holes with combine again from cathode layer 65 injected electrons, excite the organic molecule that is used to form luminescent layer, and produce exciton.Spontaneous photosphere emits beam in the process of (radiative deactivation) is deactivated in this exciton radiation, and this light is outside and luminous by insulated substrate 10 directives from transparent anode layer 61.
[0019] drive with TFT 40 about this, also can be provided with aforementioned pixel selection with the same light shield layer of the photomask 70 of TFT30.
[the 2nd embodiment]
The result of the photoelectric current that is produced when [0020] Fig. 6 shows investigation to the light of TFT irradiation 900001x.The photoelectric current that will produce when will not have photomask is made as 1.0, shows with the relative value with respect to this.Though the photomask about thickness 200A also has the effect of shading, when using the photomask more than the thickness 400A, hiding optical activity can uprise, when thickness 600A is above, hide optical activity and can change height, when the about 2000A of thickness, can obtain the screening optical activity equal with metal film.Thereby, even when using the photomask of non-conductor film, also wish to adopt the thicker photomask of thickness sometimes.Yet, can produce the lining problem of active layers as previously mentioned.
[0021] therefore, among the 2nd embodiment active layers 33 being reached capacitance electrode 55 integral body that link to each other with this active layers 33 is covered.That is, cover the polysilicon film integral body that becomes one with active layers.Fig. 4 is a plane graph, and Fig. 5 is the cutaway view of A-A line in Fig. 4.Photomask 70 in photomask 80 to the 1 embodiment was big, element numbers and the 1st embodiment were general.As above-mentioned when carrying out shading, owing to can not produce the problem of the lining deterioration of polysilicon film, thus compare with the 1st embodiment, can the thickening thickness, thus can obtain the photomask of high light-proofness.In the present embodiment, consider light shielding ability, the difficulty of film forming, the lining of difference of height etc., the thickness of photomask is preferably 400A to 2000A.
[0022] and, in the present embodiment, constitute pixel selection and become one with the semiconductor layer that constitutes maintenance electric capacity, so photomask is set in the mode of covering the semiconductor layer integral body that becomes one with the semiconductor layer of TFT.Yet these photomasks or have driving beyond the pixel selection TFT with TFT or when being used in the TFT of other purposes when being connected with distribution etc. and being island and separating, can also on each assembly photomask be set.
Claims (8)
1. organic electroluminescence display device and method of manufacturing same, it is characterized by: possessing has: be formed on the insulated substrate, emit the organic electroluminescence assembly of light by described insulated substrate; And in order to drive the thin-film transistor of described organic electroluminescence assembly;
Described thin-film transistor possesses and has: be formed at the semiconductor layer on the described insulated substrate; Be formed on the described insulated substrate, be used to cover the photomask that is incident upon the extraneous light of described semiconductor layer by described insulated substrate by what non-conducting material constituted; Be sandwiched in the back grid dielectric film between described photomask and the described semiconductor layer; In the mode of the channel region that covers described semiconductor layer and the gate insulating film that forms; And be formed at gate electrode on the described gate insulating film.
2. organic electroluminescence display device and method of manufacturing same according to claim 1, wherein, described non-conducting material is an amorphous silicon.
3. organic electroluminescence display device and method of manufacturing same according to claim 2, wherein, the thickness of described photomask is more than 250A, below the 600A.
4. organic electroluminescence display device and method of manufacturing same according to claim 1, wherein, described photomask is expanded more than the 2 μ m from the edge of described channel region.
5. organic electroluminescence display device and method of manufacturing same according to claim 1 wherein, to cover the mode of described semiconductor layer integral body, disposes described photomask.
6. organic electroluminescence display device and method of manufacturing same according to claim 5, wherein, the thickness of described photomask is more than 400A, below the 2000A.
7. organic electroluminescence display device and method of manufacturing same according to claim 5, wherein, described photomask covers the semiconductor layer integral body that becomes one with the semiconductor layer that constitutes thin-film transistor.
8. organic electroluminescence display device and method of manufacturing same according to claim 5, wherein, described photomask covers and constitutes the semiconductor layer that keeps electric capacity or other TFT.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005277300 | 2005-09-26 | ||
| JP2005277300 | 2005-09-26 | ||
| JP2006091900 | 2006-03-29 |
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| Publication Number | Publication Date |
|---|---|
| CN1941399A true CN1941399A (en) | 2007-04-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610139363 Pending CN1941399A (en) | 2005-09-26 | 2006-09-25 | Organic electroluminescent display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054432A (en) * | 2009-10-30 | 2011-05-11 | 佳能株式会社 | Light-emitting device |
| CN102184965A (en) * | 2010-01-15 | 2011-09-14 | 佳能株式会社 | Method of driving transistor and device including transistor driven by the method |
-
2006
- 2006-09-25 CN CN 200610139363 patent/CN1941399A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054432A (en) * | 2009-10-30 | 2011-05-11 | 佳能株式会社 | Light-emitting device |
| CN102184965A (en) * | 2010-01-15 | 2011-09-14 | 佳能株式会社 | Method of driving transistor and device including transistor driven by the method |
| CN102184965B (en) * | 2010-01-15 | 2014-12-10 | 佳能株式会社 | Method of driving transistor and device including transistor driven by the method |
| US9373724B2 (en) | 2010-01-15 | 2016-06-21 | Canon Kabushiki Kaisha | Method of driving transistor and device including transistor driven by the method |
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