CN1940131A - Production of thin film by chemical gas-phase deposition - Google Patents
Production of thin film by chemical gas-phase deposition Download PDFInfo
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- CN1940131A CN1940131A CN 200510100091 CN200510100091A CN1940131A CN 1940131 A CN1940131 A CN 1940131A CN 200510100091 CN200510100091 CN 200510100091 CN 200510100091 A CN200510100091 A CN 200510100091A CN 1940131 A CN1940131 A CN 1940131A
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Abstract
This invention involves a chemical vapor deposition of thin films prepared device, including a stove tube, a heating device for heating the tube and a carrier in the tube for placing the basement of the film. An acute angle was installed between the carrier and the tube.
Description
[technical field]
(Chemical Vapor Deposition, CVD) device of preparation film relates in particular to the device that a kind of chemical Vapor deposition process prepares carbon nano-tube film to the present invention relates to a kind of chemical Vapor deposition process.
[background technology]
Carbon nanotube is a kind of tubular graphene, and it is found in 1991 by Japanology personnel Iijima, sees also " Helical Microtubules of Graphitic Carbon ", S Iijima, Nature, Vol.354, P.56 (1991).Because it has performances such as extremely excellent conduction, one-way heat conduction, and causes people's extensive concern, the preparation method of carbon nanotube also is the emphasis of scientific research always.
The method for preparing carbon nanotube has arc discharge method (Arc Discharge), laser disappear molten method (LaserAblation), chemical Vapor deposition process etc., can't the grow up carbon nanotube of film like of preceding two kinds of methods, the carbon nanotube of film like and the CVD method can directly be grown up.Growing up has the substrate of film like carbon nanotube can directly apply to electronic component, and need not to do the film forming aftertreatment again, but need guarantee the homogeneity of carbon nano-tube film.As being applied to the substrate of field emission component, its homogeneity is very important.Consider from processing procedure and component size in addition, the uniform film thickness performance when to reach increase of batch process quantity and substrate size increase also is very important.
See also Fig. 1, typical C VD method growth carbon nanotube equipment comprises that a heating unit 11, a Quartz stove tube 12, are arranged at being used to place and waiting to grow up the carrier 13 of carbon nanotube substrate 14 in the Quartz stove tube.General carrier 13 adopts flat, and substrate 14 lies against on the carrier 13.
This kind device is for small size substrate such as mobile phone faceplate etc., its film forming uniformity coefficient perhaps can reach requirement when monolithic was produced, but for large size panel such as liquid crystal display or notebook computer screen etc., perhaps the large-scale boiler tube of batch output increase then can't obtain good homogeneous.
See also Fig. 2, during batch process, a plurality of substrates 25 place on the carrier 24, carbon-source gas enters boiler tube by inlet 222, when carbon-source gas during near substrate 25, because the resistance on carbon-source gas and substrate 25 surfaces can form a gaseous diffusion frictional belt 26 on substrate 25 surfaces, this gaseous diffusion frictional belt 26 can disappear along with carbon-source gas enters finally, but because the existence in gaseous diffusion frictional belt 26,222 far away more from inlet, it is long more that carbon-source gas self-diffusion frictional belt 26 diffuses to time on substrate 25 surfaces, under the certain situation of total reaction time, then be used to grow up time of carbon nanotube is also few more, and the carbon nano-tube film thickness that becomes to grow is more little.Substrate 25 sizes are big more or batch output is big more, and this kind effect is obvious more.
In view of this, provide a kind of can be implemented in large-size substrate and increase the preparation facilities that can become to grow the high carbon nano-tube film of homogeneity under the situations such as batch process quantity particularly important.
[summary of the invention]
Below will illustrate and a kind ofly can be implemented in large-size substrate and increase the preparation facilities that can become to grow the high carbon nano-tube film of homogeneity under the situations such as batch process quantity with embodiment.
The preparation facilities of this carbon nano-tube film comprises that heating unit and that a boiler tube, is used to heat this boiler tube is arranged at the carrier of placing the carbon nanotube substrate of waiting to grow up when being used to prepare carbon nanotube in this boiler tube, wherein this carrier and this boiler tube setting radially in an acute angle.
Than prior art, carrier and boiler tube setting radially in an acute angle in the preparation facilities of described carbon nano-tube film.Thereby during the preparation carbon nano-tube film, the bases gas communication sectional area far away more from inlet is more little, its gas flow rate is also fast more, and gaseous diffusion boundary layer thickness and flow velocity are inversely proportional to, promptly,, the gaseous diffusion boundary layer thickness is reduced because gas flow rate is accelerated from entering the mouth more at a distance, thereby obtain the uniform gaseous diffusion of thickness frictional belt, finally obtain the uniform carbon nano-tube film of a thickness.
[description of drawings]
Fig. 1 is the preparation facilities synoptic diagram of prior art carbon nano-tube film.
Fig. 2 is the preparation facilities gaseous diffusion interlayer synoptic diagram of prior art carbon nano-tube film.
Fig. 3 is the preparation facilities first embodiment diagrammatic cross-section of carbon nano-tube film of the present invention.
Fig. 4 is the preparation facilities first embodiment carrier structure diagrammatic cross-section of carbon nano-tube film of the present invention.
Fig. 5 is the preparation facilities second embodiment diagrammatic cross-section of carbon nano-tube film of the present invention.
[specific embodiment]
Below in conjunction with the preparation facilities that illustrates a kind of carbon nano-tube film:
Seeing also Fig. 3, is preparation facilities first embodiment of described carbon nano-tube film, and it heating unit 31 and one that comprises that a boiler tube 32, is used for furnace tubing 32 is arranged to be used in the boiler tube place waits to grow up the carrier 33 of substrate 34 of carbon nanotube.
Have an inlet 322 on the boiler tube 32, boiler tube 32 is formed and is got final product by stable chemical performance, resistant to elevated temperatures material, and material is preferably quartzy.It is outer near the outer surface of furnace tube places that heating unit 31 is arranged at boiler tube 32, but the reaction chamber in its furnace tubing 32 and the boiler tube get final product, preferably, heating unit 31 closely outside boiler tube 32 to reach the uniform heating effect.
In the present embodiment, 322 feed carbon-source gas in boiler tube by entering the mouth, on behalf of carbon-source gas, arrow flow among the figure, when carbon-source gas flow to from the nearest substrate 34 of inlet 322, begins to produce a gaseous diffusion frictional belt 36.Because carrier 33 and boiler tube 32 setting radially in an acute angle, carbon-source gas is forced to upwards climb along carrier, and it is far away more from inlet 322, then the space of carrier 33 tops is more little, therefore gas flow rate is also fast more, and gaseous diffusion frictional belt 36 thickness and gas flow rate are inversely proportional to, therefore gaseous diffusion frictional belt 36 thickness from inlet 322 substrate 34 tops far away decrease, thereby form the uniform gaseous diffusion of thickness frictional belt 36 in substrate 34 tops, finally make the uniform carbon nano-tube film of a thickness.
Seeing also Fig. 5, is preparation facilities second embodiment of carbon nano-tube film of the present invention, and than first embodiment, it further comprises a setting device 51, and it is used to regulate angle between carrier 53 and the base 55.In the present embodiment, this angle of inclination setting device 51 comprises a base 55 and a back up pad 56, and an end of carrier 53 is provided with a rotating shaft 536, and rotating shaft 536 is installed on first end 554 of base 55, thereby carrier 53 can 536 rotate around the shaft.And back up pad 56 can will support certain angle between carrier 53 and the base 55.For preventing that back up pad from slipping, preferred, can on carrier 53 and base 55 opposing second surface 532, form at least one upper support groove 534, an end of back up pad 56 can be stuck in the upper support groove 534.Preferably, can form support slot 552 at least once on the relative side of base 55 and second surface 532, an end of back up pad 56 can be stuck in the lower support groove 552.Be more preferably, be formed with at least one upper support groove 534 and corresponding at least one lower support groove 552 respectively on the relative side of the second surface 532 of carrier 53 and base 55 and carrier 53, the two ends of back up pad 56 are stuck in respectively in upper support groove 534 and the lower support groove 552.Back up pad 56 is stuck in 552 of different upper support grooves 534 and lower support grooves, perhaps adopts the back up pad 56 of different heights, can change 55 angles of carrier 53 and base.
In the present embodiment, can according to preparation during carbon nanotube different condition utilize back up pad 56 to regulate carrier 53 and 55 angles of base, make the gaseous diffusion boundary layer thickness more be tending towards even.Thereby this device all can make the uniform carbon nano-tube film of thickness to various preparation conditions.
Originally stating among the embodiment with the preparation carbon nano-tube film is example explanation the present invention, be appreciated that when utilizing other method to prepare carbon nano-tube film, can form the gaseous diffusion frictional belt at the substrate surface place equally, utilize device of the present invention, can make the film of a uniform film thickness equally.
Claims (12)
1. the device of a production of thin film by chemical gas-phase deposition, it heating unit and one that comprises that a boiler tube, is used to heat this boiler tube is arranged at the carrier that is used to place substrate in this boiler tube, the setting radially in an acute angle of this carrier and this boiler tube.
2. the device of production of thin film by chemical gas-phase deposition as claimed in claim 1 is characterized in that angulation is between 15 °-75 ° between this carrier and this boiler tube are radially.
3. the device of production of thin film by chemical gas-phase deposition as claimed in claim 1 is characterized in that this boiler tube has an inlet, and this carrier comprises a first surface in the face of inlet.
4. the device of production of thin film by chemical gas-phase deposition as claimed in claim 3 is characterized in that being formed with the baffle plate that is used to prevent the substrate landing on this carrier first surface.
5. the device of production of thin film by chemical gas-phase deposition as claimed in claim 3 is characterized in that being formed with the antiskid groove that is complementary with substrate on this carrier first surface.
6. the device of production of thin film by chemical gas-phase deposition as claimed in claim 5, the degree of depth that it is characterized in that this antiskid groove is less than substrate thickness.
7. the device of production of thin film by chemical gas-phase deposition as claimed in claim 1, it further comprises a setting device, be used to regulate carrier and boiler tube radially between angle.
8. the device of production of thin film by chemical gas-phase deposition as claimed in claim 7, it is characterized in that this setting device comprises a base and a back up pad, one end of this carrier is coupling on an end of base, and this back up pad is supported between this carrier and this base, makes carrier and base angled.
9. the device of production of thin film by chemical gas-phase deposition as claimed in claim 8 is characterized in that this carrier has the second surface in the face of base, is formed with at least one upper support groove on this second surface.
10. the device of production of thin film by chemical gas-phase deposition as claimed in claim 9 is characterized in that this back up pad one end is stuck in this upper support groove.
11. the device of production of thin film by chemical gas-phase deposition as claimed in claim 8 is characterized in that being formed with on the relative side with carrier of this base relative at least one lower support groove.
12. the device of production of thin film by chemical gas-phase deposition as claimed in claim 11 is characterized in that this back up pad one end is stuck in the described lower support groove.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510100091 CN1940131A (en) | 2005-09-30 | 2005-09-30 | Production of thin film by chemical gas-phase deposition |
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| CN 200510100091 CN1940131A (en) | 2005-09-30 | 2005-09-30 | Production of thin film by chemical gas-phase deposition |
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| CN1940131A true CN1940131A (en) | 2007-04-04 |
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| CN 200510100091 Pending CN1940131A (en) | 2005-09-30 | 2005-09-30 | Production of thin film by chemical gas-phase deposition |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106517147A (en) * | 2016-12-09 | 2017-03-22 | 北京科技大学 | Method and device for preparing carbon nanotube array thermal interface material with high purity and high heat conductivity |
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2005
- 2005-09-30 CN CN 200510100091 patent/CN1940131A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106517147A (en) * | 2016-12-09 | 2017-03-22 | 北京科技大学 | Method and device for preparing carbon nanotube array thermal interface material with high purity and high heat conductivity |
| CN106517147B (en) * | 2016-12-09 | 2018-07-27 | 北京科技大学 | Prepare the method and device of high-purity highly-conductive hot carbon nano pipe array thermal interfacial material |
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Open date: 20070404 |