CN1937242A - Transistor electrode structure, and pixel structure and display device comprising same - Google Patents
Transistor electrode structure, and pixel structure and display device comprising same Download PDFInfo
- Publication number
- CN1937242A CN1937242A CN 200610141673 CN200610141673A CN1937242A CN 1937242 A CN1937242 A CN 1937242A CN 200610141673 CN200610141673 CN 200610141673 CN 200610141673 A CN200610141673 A CN 200610141673A CN 1937242 A CN1937242 A CN 1937242A
- Authority
- CN
- China
- Prior art keywords
- width
- electrode
- electrode structure
- transistorized
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 235000017848 Rubus fruticosus Nutrition 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 244000078534 Vaccinium myrtillus Species 0.000 description 2
- 235000021029 blackberry Nutrition 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
Abstract
The electrode structure of the transistor includes first electrode and second electrode. The first electrode possesses at least two pieces of first area and at least one piece of second area. Being parallel to each other, first area possesses first width. Possessing second width, the second area is connected to the first area in order to define space with opening. The first width is larger than second width actually.
Description
Technical field
The present invention relates to a kind of electrode structure, in more detail, relate to a kind of electrode structure of thin-film transistor.
Background technology
In recent years, the development of flat-panel screens is more and more rapider, has replaced traditional cathode-ray tube display gradually.Flat-panel screens now mainly contains following several: organic light emitting diode display (Organic Light-Emitting Diodes Display; OLED), plasma scope (PlasmaDisplay Panel; PDP), LCD (Liquid Crystal Display; LCD) and Field Emission Display (Field Emission Display; FED) etc.Wherein control the thin-film transistor (TFT) that each pixel opens and closes in these flat-panel screens, be one of quite critical element in these flat-panel screens.
As shown in Figure 1, the electrode structure 1 of general thin-film transistor comprises gate electrode 10, source electrode 11, drain electrode 12 and semiconductor layer 13.This semiconductor layer 13 is formed on this gate electrode 10, and this source electrode 11 and this drain electrode 12 are formed on the part of this semiconductor layer 13, and separate and overlap with these gate electrode 10 parts respectively.Generally speaking, source electrode width LS and drain electrode width LD are about 4 microns, utilize the thin-film transistor of this electrodes sized structure, finish the function of the open and close of control pixel.
Yet when electric current flow to source electrode 11 by drain electrode 12, the electric current that is flowed out by the circular arc portion 15 of drain electrode 12 only can flow into the round end part 14 of source electrode 11; But the round end part 14 of source electrode 11 is for the circular arc portion 15 of drain electrode 12, and its zone that overlaps relatively is very limited, and this round end part 14 very easily is subjected to the influence of technology variation, and then stops the normal current transmission.This will have a strong impact on the magnitude of current, and cause the electric current instability.
Therefore will how to increase and stable drain electrode 12 flows to the magnitude of current of source electrode 11, not have anxiety and comparatively stable so that the TFT of display electrically transmits, being needs the target of making great efforts and improving.
Summary of the invention
The object of the present invention is to provide a kind of transistorized electrode structure, by changing the wherein relative size relation of two electrodes, to improve the magnitude of current that is also transmitted between stabilized electrodes.
Above-mentioned electrode structure comprises first electrode and second electrode.This first electrode has at least two first areas and at least one second area.Respectively this first area is parallel to each other and have first width, and this second area has second width, and connects this first area, so that define the space with opening.This second electrode sees through this opening, is arranged in this space of part.Wherein, this first width is in fact greater than this second width.
Realizing the another kind of execution mode of above-mentioned purpose, is this electrode structure, comprises first electrode and second electrode.This first electrode has at least two first areas and at least one second area.Respectively this first area is parallel to each other and have first width, and this second area has second width, and connects this first area, so that define the space with opening.This second electrode has body and end regions, and this end regions sees through this opening, be arranged in this space of part, and the width of this end regions is bigger than the width of this body.
Another object of the present invention is to provide a kind of dot structure, comprise the described arbitrary transistorized electrode structure of leading portion.
Another object of the present invention is to provide a kind of display unit, comprise the described arbitrary transistorized electrode structure of leading portion.
The present invention improves the electric current that is also transmitted between stabilized electrodes by the electrode width that changes in the transistorized electrode structure, and makes that raceway groove length still can remain in the regulation of Design Rule between electrode.Thus, can under the regulation that does not change Design Rule, realize improving the also purpose of stable electrical flow.
Behind the execution mode of consulting accompanying drawing and describing subsequently, those skilled in the art just can understand other purpose of the present invention, and technological means of the present invention and execution mode.
Description of drawings
Fig. 1 is the electrode structure schematic diagram of existing thin-film transistor;
Fig. 2 A is the schematic diagram of electrode structure first embodiment of the present invention;
Fig. 2 B is among electrode structure first embodiment of the present invention, and connecting portion is at the schematic diagram of another location;
Fig. 3 A is the schematic diagram of electrode structure second embodiment of the present invention;
Fig. 3 B is among electrode structure second embodiment of the present invention, and connecting portion is at the schematic diagram of another location;
Fig. 4 A is the schematic diagram of electrode structure the 3rd embodiment of the present invention; And
Fig. 4 B is in the third embodiment of the present invention, and connecting portion is at the schematic diagram of another location;
Fig. 5 is between the different crystal pipe, and its drain electrode electric current I D is to the experimental curve diagram of drain electrode voltage VD;
Fig. 6 is between the different crystal pipe, and its drain electrode electric current I D is to another experimental curve diagram of drain electrode voltage VD; With
Fig. 7 is the schematic diagram that concerns between electrode structure of the present invention and display unit.
The simple symbol explanation
1: the electrode structure 10 of thin-film transistor: gate electrode
11: source electrode 12: drain electrode
13: semiconductor layer 14: the round end part of source electrode
15: the circular arc portion LS of drain electrode: source electrode width
LD: drain electrode width 2: transistorized electrode structure
20: gate electrode 21: source electrode
22: drain electrode 23: the predetermined material layer
220,221: first area 222: second area
223: connecting portion LS: the source electrode width
LD1: the first width LD2: second width
3: transistorized electrode structure 30: gate electrode
31: source electrode 32: drain electrode
33: predetermined material layer 310: body
311: end regions 320,321: first area
322: second area 323: connecting portion
4: the electrode structure 40 of transistor: gate electrode
41: source electrode 42: drain electrode
43: predetermined material layer 410: body
411: end regions 420,421: first area
422: second area 423: connecting portion
7: display unit 71: dot structure
LS1: end regions width LS2: body width
LD1: the first width LD2: second width
Embodiment
For ease of understanding, described first electrode and second electrode all describe with the drain electrode and the source electrode of more common execution mode.
The first embodiment of the present invention is a kind of transistorized electrode structure 2 shown in Fig. 2 A and Fig. 2 B, it comprises gate electrode 20, source electrode 21, drain electrode 22 and predetermined material layer 23.Predetermined material layer 23 is formed on the gate electrode 20, and source electrode 21 and drain electrode 22 are formed on the predetermined material layer 23 of part, and separate and overlap with gate electrode 20 parts respectively.Drain electrode 22 has 220,221, second areas 222 in two first areas and connecting portion 223.First area 220,221 is parallel to each other, and all has the first width LD1, and second area 222 has the second width LD2, and connects first area 220,221, uses so that drain electrode 22 defines the space with opening.And in the middle of present embodiment, the first width LD1 is in fact greater than the second width LD2.
First embodiment wherein a kind of mode of described transistorized electrode structure 2 such as Fig. 2 A show, the connecting portion 223 of drain electrode 22 is connected to second area 222.Another kind of mode then shows as Fig. 2 B, and the connecting portion 223 of drain electrode 22 is connected to first area 220.And among present embodiment, the width LS of source electrode 21 equates with the first width LD1 in fact.
The various parameters of first embodiment will be carried out following illustrating: the width LS of the first width LD1 and source electrode 21 is essentially 4 microns, and the second width LD2 is essentially 2 microns to 3.8 microns.Therefore, the first width LD1 and the second width LD2 differ 0.2 micron to 2 microns in fact; The width LS of source electrode 21 and the second width LD2 differ 0.2 micron to 2 microns in fact.In other words, the second width LD1 equals the first width LD1 in fact and deducts at least 0.2 micron difference, and available following equation is represented: LD2=LD1-n, wherein, n is the natural number more than or equal to 0.2.For example, if n=0.2, LD1=4, then LD2=3.8; If n=1, LD1=4, then LD2=3; If n=0.4, LD1=5, then LD2=4.6; If n=1.25, LD1=4, then LD2=2.75, if n=1, LD1=3, then LD2=2 can come change according to the demand of design, and be noted that the second width LD1, width LS that also can source electrode 21 deducts to 0.2 micron difference, and available following equation is represented: LD2=LS-n, wherein, n is the natural number more than or equal to 0.2, in this superfluous words no longer.Can learn that through calculating the ratio of the first width LD1 and the second width LD2 is essentially 1.05 to 2; The width LS of source electrode 21 and the ratio of the second width LD2 in fact also are 1.05 to 2.
The second embodiment of the present invention is a kind of transistorized electrode structure 3 shown in Fig. 3 A and Fig. 3 B, it comprises gate electrode 30, source electrode 31, drain electrode 32 and predetermined material layer 33.Predetermined material layer 33 is formed on the gate electrode 30, and source electrode 31 and drain electrode 32 are formed on the predetermined material layer 33 of part, and separate and overlap with gate electrode 30 parts respectively.Drain electrode 32 has 320,321, second areas 322 in two first areas and connecting portion 323.First area 320,321 is parallel to each other, and all has the first width LD1, and second area 322 has the second width LD2, and connects first area 320,321, uses so that drain electrode 32 defines the space with opening.Source electrode 31 has body 310 and end regions 311, and end regions 311 is arranged on the space with opening that drain electrode 32 is partly defined.And in the middle of present embodiment, the first width LD1 equals the second width LD2 in fact, and the width LS1 of end regions 311 is bigger than the width LS2 of body 310, and the width LS1 of end regions 311 is in fact greater than the first width LD1 and the second width LD2.
Second embodiment wherein a kind of mode of described transistorized electrode structure 3 such as Fig. 3 A show, the connecting portion 323 of drain electrode 32 is connected to second area 322.Another kind of mode then shows as Fig. 3 B, and the connecting portion 323 of drain electrode 32 is connected to first area 320.
The various parameters of second embodiment will be carried out following illustrating: the first width LD1 and the second width LD2 are essentially 4 microns, the width LS1 of the end regions 311 of source electrode 31 is essentially 4.2 microns to 8 microns, and the width LS2 of the body 310 of source electrode 31 is essentially 4 microns to 6 microns.Therefore, the width LS2 of the width LS1 of end regions 311 and body 310 differs 0.2 micron to 2 microns in fact; The width LS1 of end regions 311 and the first width LD1 differ 2.2 microns to 4 microns in fact.In other words, the width LS1 of end regions 311 equals the difference that body LS2 adds at least 0.2 micron in fact, and available following equation is represented: LS1=LS2+n, wherein, n is the natural number more than or equal to 0.2.For example, if n=0.2, LS2=4, then LS1=4.2; If n=1, LS2=4, then LS1=5; If n=0.2, LS2=6, then LS1=6.2; If n=1.25, LS2=4, then LS1=5.25, if n=1, LS2=3, then LS1=4 can come change according to the demand of design, and be noted that, the width LS1 of end regions 311 also can add at least 0.2 micron difference by the first width LD1, and available following equation is represented: LS1=LD1+n, wherein, n is the natural number more than or equal to 0.2, in this superfluous words no longer.Can learn that through calculating the ratio of the width LS1 of end regions 311 and the width LS2 of body 310 is essentially 1.03 to 1.33; The width LS1 of end regions 311 and the ratio of the first width LD1 are essentially 1.55 to 2.
The third embodiment of the present invention is a kind of transistorized electrode structure 4 shown in Fig. 4 A and Fig. 4 B, it comprises gate electrode 40, source electrode 41, drain electrode 42 and predetermined material layer 43.Predetermined material layer 43 is formed on the gate electrode 40, and source electrode 41 and drain electrode 42 are formed on the predetermined material layer 43 of part, and separate and overlap with gate electrode 40 parts respectively.Drain electrode 42 has 420,421, second areas 422 in two first areas and connecting portion 423.First area 420,421 is parallel to each other, and all has the first width LD1, and second area 422 has the second width LD2, and connects first area 420,421, uses so that drain electrode 42 defines the space with opening.Source electrode 41 has body 410 and end regions 411, and end regions 411 is arranged on the space with opening that drain electrode 42 is partly defined.And in the middle of present embodiment, the first width LD1 is in fact greater than the second width LD2, and the width LS1 of end regions 411 is bigger than the width LS2 of body 410, and the width LS1 of end regions 411 is in fact greater than the first width LD1.
The 3rd embodiment wherein a kind of mode of described transistorized electrode structure 4 such as Fig. 4 A show, the connecting portion 423 of drain electrode 42 is connected to second area 422.Another kind of mode then shows as Fig. 4 B, and the connecting portion 423 of drain electrode 42 is connected to first area 420.
The various parameters of the 3rd embodiment will be carried out following illustrating: the first width LD1 is essentially 4 microns, the second width LD2 is essentially 2 microns to 3.8 microns, the width LS1 of the end regions 411 of source electrode 41 is essentially 4.2 microns to 8 microns, and the width LS2 of the body 410 of source electrode 41 is essentially 4 microns to 6 microns.Therefore, the width LS2 of the width LS1 of end regions 411 and body 410 differs 0.2 micron to 2 microns in fact; The width LS1 of end regions 411 and the first width LD1 differ 2.2 microns to 4 microns in fact; The first width LD1 and the second width LD2 differ 0.2 micron to 2 microns in fact.In other words, the width LS1 of end regions 411 equals the difference that body LS2 adds at least 0.2 micron in fact, and available following equation is represented: LS1=LS2+n, wherein, n is the natural number more than or equal to 0.2.For example, if n=0.2, LS2=4, then LS1=4.2; If n=1, LS2=4, then LS1=5; If n=0.2, LS2=6, then LS1=6.2; If n=1.25, LS2=4, then LS1=5.25, if n=1, LS2=3, then LS1=4 can come change according to the demand of design, and be noted that the width LS1 of end regions 411, also can add at least 0.2 micron difference by the first width LD1, available following equation is represented: LS1=LD1+n, wherein, n is the natural number more than or equal to 0.2, in this superfluous words no longer.The second width LD1 equal in fact the first width LD1 subtract at least 0.2 micron difference, available following equation is represented: LD2=LD1-n, wherein, n is the natural number more than or equal to 0.2.For example, if n=0.2, LD1=4, then LD2=3.8; If n=1, LD1=4, then LD2=3; If n=0.4, LD1=5, then LD2=4.6; If n=1.25, LD1=4, then LD2=2.75, if n=1, LD1=3, then LD2=2 can come change according to the demand of design, and be noted that the second width LD1, also can deduct to 0.2 micron difference by body LS2, available following equation is represented: LD2=LS2-n, wherein, n is the natural number more than or equal to 0.2, in this superfluous words no longer.Can learn that through calculating the ratio of the width LS1 of end regions 411 and the width LS2 of body 410 is essentially 1.03 to 1.33; The width LS1 of end regions 411 and the ratio of the first width LD1 are essentially 1.55 to 2; The ratio of the first width LD1 and the second width LD2 in fact then is 1.05 to 2.
Fig. 5 and Fig. 6 show various multi-form transistors, and the drain electrode electric current (ID) when the control pixel opens and closes is to drain electrode voltage (VD) curve chart; Wherein, Fig. 5 shows that ID was to the curve chart of VD when pixel was dark entirely, and Fig. 6 shows then when the luminous intensity of pixel unit area is 5000 nits (nit) that ID is to the curve chart of VD.
At length say, consult Fig. 5, when component symbol 510,511,512 is 10 volts for gate electrode voltage (VG), various multi-form transistorized ID are to the VD curve, wherein component symbol 510 is the transistor of the electrode structure 1 of use Fig. 1, component symbol 511 is the transistor of the electrode structure 2 of use Fig. 2 A, and component symbol 512 is the transistor of the electrode structure 4 of use Fig. 4 A.Component symbol the 520,521, the 522nd is when VG is 20 volts, various multi-form transistorized ID are to the VD curve, same, component symbol 520,521,522 is respectively the transistor of electrode structure 4 of electrode structure 2, Fig. 4 A of the electrode structure 1 that uses Fig. 1, Fig. 2 A.Component symbol the 530,531, the 532nd, VG are 30 volts similar results.
Consult Fig. 6, when component symbol 610,611,612 is 10 volts for gate electrode voltage (VG), various multi-form transistorized ID are to the VD curve, wherein component symbol 610 is the transistor of the electrode structure 1 of use Fig. 1, component symbol 611 is the transistor of the electrode structure 2 of use Fig. 2 A, and component symbol 612 is the transistor of the electrode structure 4 of use Fig. 4 A.Component symbol the 620,621, the 622nd is when VG is 20 volts, various multi-form transistorized ID are to the VD curve, same, component symbol 620,621,622 is respectively the transistor of electrode structure 4 of electrode structure 2, Fig. 4 A of the electrode structure 1 that uses Fig. 1, Fig. 2 A.Component symbol the 630,631, the 632nd, VG are 30 volts similar results.。
Carry out in the aforementioned various different experiments, the transistorized reference dimension of electrode structure is as follows: the width LS of the transistorized source electrode 11 of the electrode structure 1 of use Fig. 1 and the width LD of drain electrode 12 are 4 microns.The width LS of the transistorized source electrode 21 of the electrode structure 2 of use Fig. 2 A and the first width LD1 of drain electrode 22 are 4 microns, and the second width LD2 of drain electrode 22 then is 3 microns.The width LS2 of the body 410 of the transistorized source electrode 41 of the electrode structure 4 of use Fig. 4 A and the first width LD1 of drain electrode 42 are 4 microns, the width LS1 of the end regions 411 of source electrode 41 is 5 microns, and the second width LD2 of drain electrode 42 then is 3 microns.
Can learn by aforesaid Fig. 5 and Fig. 6, with respect to prior art (Fig. 1), use has the transistor of feature electrode structure of the present invention (as 2A, 4A figure), is enough to improve significantly between electrode the magnitude of current that (be above-mentioned between drain electrode and source electrode) transmitted.
Consult Fig. 7, the transistorized electrode structure 2,3,4 of described first embodiment of leading portion and second embodiment all can be used in a kind of display unit 7, this display unit 7 comprises dot structure 71, also comprise holding wire (not icon) in the dot structure 71, all be connected with the connecting portion 223,323 of drain electrode 22,32.Aforesaid display unit comprises screen, TV, mobile computer, touch panel (touchpanel), display screen (as: the mobile phone of portable electric product, digital camera, digital VTR, digital audio-video is dialled the machine of putting, digital secretary (as: PDA (personal digital assistant), blackberry (black berry) or other similar products like), handheld game device (as: GameBoy, PSP (playstation portable), Nintendo DS Lite or other similar game machine)), the automobile AV device, outdoor or indoor display panel, outdoor or indoor indicator boards etc. are various for the display unit that show.Except above-mentioned display unit utilization type, also comprise different types of display unit, described display unit comprises organic light emitting diode display (Organic Light-Emitting Diodes Display; OLED), plasma scope (PlasmaDisplay Panel; PDP), LCD (Liquid Crystal Display; LCD) and Field Emission Display (Field Emission Display; FED) etc.More than narration is only illustrated with regard to feature electrode structure of the present invention, about general basic framework such as dot structure, display unit, because of non-this pattern characteristics of genus, and the Technical Architecture that also can give understanding for present technique field those of ordinary skill, in this case, then do not give unnecessary details in addition.
Moreover, must it should be noted that the accompanying drawing of the foregoing description, be the example of drain electrode all to level off to the U type, yet the kenel of drain electrode is not limited to this, as long as can be the scheme that can substitute by the description person of containing of the embodiment of the invention (as C type or alternate manner).And this electrode structure transistor types applicatory comprises bottom gate type (as: back of the body channel-etch type (BCE), etch-stop type (Etching-stopper)), top gate type (top-gate) or other similar type.In addition, the predetermined material layer of the invention described above embodiment is the example explanation with the semiconductor layer, yet also is not limited to this kenel, also can comprise dielectric layer or above-mentioned combination.The material of semiconductor layer comprises amorphous silicon, polysilicon, microcrystal silicon, monocrystalline silicon or above-mentioned combination, but and also doped N-type dopant, P type dopant or above-mentioned combination of semiconductor layer.When the semiconductor layer doped dopant, this dopant can be horizontal doping or rectilinear being entrained in the semiconductor layer partly, and concentration of this son that mixes also can be along with its horizontal or rectilinear direction increase or minimizing.Yet semiconductor layer also can be divided into several layerings, and aforesaid dopant also can be doped at least one layering.The material of dielectric layer comprises silicon nitride, silica, silicon oxynitride, organic compound or above-mentioned combination.
In addition, the accompanying drawing of the foregoing description, all the width with gate electrode 20,30,40 serves as to implement example greater than the width of predetermined material layer 23,33,43 in fact, yet the width of this gate electrode 20,30,40 also can be less than or equal to the width of predetermined material layer 23,33,43 in fact.In other words, the area of gate electrode 20,30,40 is the enforcement example greater than the area of predetermined material layer 23,33,43 in fact, yet the area of this gate electrode 20,30,40 also can be less than or equal to the area of predetermined material layer 23,33,43 in fact.In addition, the accompanying drawing of the foregoing description all is with the first width LD1, the width LS of source electrode 21, source electrode 31,41 body 310,410 width LS2 serves as that enforcement example and experimental data illustrate it with 4 microns, yet, as long as can meet design rule of the present invention (design rule) and satisfy the resolution (resolution) of machine, the described part of electrode structure then, as: the first width LD1, the width LS of source electrode 21, source electrode 31,41 body 310,410 width LS2 can use other size, as: 3 microns, 3.5 micron, 2 microns, 1 micron, 1.25 micron or other size.
From the above, the present invention is when making transistor, by changing the fixed electrode width in the script transistor electrodes structure, improve and stabilized electrodes between (be above-mentioned between drain electrode and source electrode) magnitude of current of being transmitted, and make that raceway groove length still can remain in the definition of industry Design Rule between electrode, for example the distance between drain electrode 22,32,42 and the source electrode 21,31,41 still remains on 4 microns.Thus, can not change under the Design Rule, also can reach required technological break-through purpose.
The above embodiments only are used for exemplifying embodiments of the present invention, and explain technical characterictic of the present invention, are not to be used for limiting the scope of the invention.Any those skilled in the art can unlabored change or its equivalent scope of all belonging to the present invention and being advocated, and interest field of the present invention should be as the criterion with claim.
Claims (32)
1, a kind of transistorized electrode structure comprises:
First electrode has:
At least two first areas, parallel to each other, and respectively this first area has first width; With
At least one second area has second width, and connects described first area, so that define the space with opening; And
Second electrode sees through this opening, is arranged in this space of part; Wherein, this first width is in fact greater than this second width.
2, transistorized electrode structure as claimed in claim 1, wherein this first electrode also has connecting portion, is connected with one of them of described first area.
3, transistorized electrode structure as claimed in claim 1, wherein this first electrode also has the connecting portion that is connected with this second area.
4, transistorized electrode structure as claimed in claim 1, wherein the ratio of this first width and this second width is essentially 1.05 to 2.
5, transistorized electrode structure as claimed in claim 1, wherein this first width and this second width differ 0.2 to 2 micron in fact.
6, transistorized electrode structure as claimed in claim 1, wherein the width of this second electrode equals first width in fact.
7, transistorized electrode structure as claimed in claim 6, wherein the ratio of the width of this second electrode and this second width is essentially 1.05 to 2.
8, transistorized electrode structure as claimed in claim 6, wherein the width of this second electrode and this second width differ 0.2 to 2 micron in fact.
9, transistorized electrode structure as claimed in claim 1, wherein this first width is essentially 4 microns.
10, transistorized electrode structure as claimed in claim 1, wherein this second width is essentially 2 to 3.8 microns.
11, a kind of transistorized electrode structure comprises:
First electrode has:
At least two first areas, parallel to each other, and respectively this first area has first width; With
At least one second area has second width, and connects described first area, so that define the space with opening; And
Second electrode has body and end regions, and this end regions sees through this opening, is arranged in this space of part; Wherein, the width of this end regions is bigger than the width of this body.
12, transistorized electrode structure as claimed in claim 11, wherein the ratio of the width of the width of this end regions and this body is essentially 1.03 to 1.33.
13, transistorized electrode structure as claimed in claim 11, wherein the width of this body is essentially 4 to 6 microns.
14, transistorized electrode structure as claimed in claim 11, wherein the width of this end regions is essentially 4.2 to 8 microns.
15, transistorized electrode structure as claimed in claim 11, wherein this first width is in fact greater than this second width.
16, transistorized electrode structure as claimed in claim 11, wherein the ratio of this first width and this second width is essentially 1.05 to 2.
17, transistorized electrode structure as claimed in claim 11, wherein this first width is essentially 4 microns.
18, transistorized electrode structure as claimed in claim 11, wherein this second width is essentially 2 to 3.8 microns.
19, transistorized electrode structure as claimed in claim 11, wherein the width of the width of this end regions and this body differs 0.2 to 2 micron in fact.
20, transistorized electrode structure as claimed in claim 11, wherein the width of this end regions is in fact greater than this first width.
21, transistorized electrode structure as claimed in claim 11, wherein the ratio of the width of this end regions and this first width is essentially 1.55 to 2.
22, transistorized electrode structure as claimed in claim 11, wherein the width of this end regions and this first width differ 2.2 microns to 4 microns in fact.
23, transistorized electrode structure as claimed in claim 11, wherein this first electrode also has connecting portion, is connected with one of them of described first area.
24, transistorized electrode structure as claimed in claim 11, wherein this first electrode also has the connecting portion that is connected with this second area.
25, a kind of dot structure comprises transistorized electrode structure as claimed in claim 1.
26, dot structure as claimed in claim 25, wherein this first electrode also has one of them connecting portion that is connected with described first area.
27, dot structure as claimed in claim 26 also comprises the holding wire that is connected with this connecting portion.
28, dot structure as claimed in claim 25, wherein this first electrode also has the connecting portion that is connected with this second area.
29, dot structure as claimed in claim 28 also comprises the holding wire that is connected with this connecting portion.
30, a kind of dot structure comprises transistorized electrode structure as claimed in claim 11.
31, a kind of display unit comprises transistorized electrode structure as claimed in claim 1.
32, a kind of display unit comprises transistorized electrode structure as claimed in claim 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101416734A CN100483735C (en) | 2006-10-09 | 2006-10-09 | Transistor electrode structure, and pixel structure and display device comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101416734A CN100483735C (en) | 2006-10-09 | 2006-10-09 | Transistor electrode structure, and pixel structure and display device comprising same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1937242A true CN1937242A (en) | 2007-03-28 |
| CN100483735C CN100483735C (en) | 2009-04-29 |
Family
ID=37954630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101416734A Expired - Fee Related CN100483735C (en) | 2006-10-09 | 2006-10-09 | Transistor electrode structure, and pixel structure and display device comprising same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100483735C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212024A (en) * | 2018-12-05 | 2019-09-06 | 友达光电股份有限公司 | Thin film transistor (TFT) |
-
2006
- 2006-10-09 CN CNB2006101416734A patent/CN100483735C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212024A (en) * | 2018-12-05 | 2019-09-06 | 友达光电股份有限公司 | Thin film transistor (TFT) |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100483735C (en) | 2009-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103218970B (en) | Active matrix organic light emitting diode (AMOLED) pixel unit, driving method and display device | |
| JP2020115230A (en) | Display | |
| CN104036725B (en) | Image element circuit and its driving method, organic electroluminescence display panel and display device | |
| EP3624102A1 (en) | Display panel, display device and compensation method | |
| US20180233082A1 (en) | Pixel circuit and method for driving the same, and display apparatus | |
| CN103413524B (en) | Organic light-emitting diode pixel circuit, method for driving same and display device | |
| US9928776B2 (en) | Readout circuit and organic light emitting display device having the same | |
| CN102651196B (en) | Drive circuit and drive method of AMOLED (Active Matrix Organic Light-Emitting Diode), and display device | |
| CN103913865B (en) | Display device | |
| CN104021754B (en) | A kind of image element circuit, organic EL display panel and display device | |
| US20140192038A1 (en) | Oled pixel driving circuit | |
| EP3220382A1 (en) | Pixel circuit, driving method, and display device | |
| CN203502926U (en) | Organic light emitting diode pixel circuit and display device | |
| CN105206221A (en) | Pixel driving circuit, driving method, array substrate and display device | |
| CN103137067A (en) | Organic light emitting diode display device and method of driving the same | |
| WO2016023311A1 (en) | Pixel drive circuit, pixel drive method and display apparatus | |
| US10615244B2 (en) | OLED display panel having reset signal lines to reset pixel units and display device with the same | |
| JP2016522434A (en) | External compensation induction circuit, induction method thereof, and display device | |
| CN104078004B (en) | Image element circuit and display device | |
| CN101777304A (en) | Display apparatus and electronic apparatus | |
| CN109785797A (en) | A kind of novel AMOLED pixel circuit | |
| CN105096837B (en) | A kind of image element circuit and its driving method, display panel and display device | |
| CN107369412B (en) | Pixel circuit, driving method thereof and display device | |
| CN101577085A (en) | Display apparatus, display-apparatus driving method and electronic instrument | |
| US11056063B2 (en) | Pixel circuit and driving method therefor, and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090429 |