CN100483735C - Transistor electrode structure, and pixel structure and display device comprising same - Google Patents

Transistor electrode structure, and pixel structure and display device comprising same Download PDF

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CN100483735C
CN100483735C CN 200610141673 CN200610141673A CN100483735C CN 100483735 C CN100483735 C CN 100483735C CN 200610141673 CN200610141673 CN 200610141673 CN 200610141673 A CN200610141673 A CN 200610141673A CN 100483735 C CN100483735 C CN 100483735C
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width
electrode
transistor
region
substantially
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CN 200610141673
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CN1937242A (en
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方国龙
林友民
甘丰源
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友达光电股份有限公司
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Abstract

本发明揭示一种晶体管的电极结构和包括该电极结构的像素结构及显示装置。 The present invention discloses an electrode structure of a transistor and a pixel structure including the electrode structure and a display device. 该晶体管的电极结构包括第一电极和第二电极。 The electrode structure comprises a first transistor and a second electrode. 该第一电极具有至少两个第一区域和至少一个第二区域。 At least two of the first electrode having a first area and at least a second region. 各该第一区域互相平行且具有第一宽度,该第二区域具有第二宽度,并连接所述第一区域,以便于界定出具有开口的空间。 Each of the first region having a first width and parallel to each other, the second region having a second width, and connecting the first region, so as to define a space opening. 该第一宽度实质上大于该第二宽度。 The first width is substantially greater than the second width.

Description

晶体管的电极结构和包括该结构的像素结构及显示装置 And the electrode structure comprises a pixel structure of the structure of a transistor and a display device

技术领域 FIELD

本发明涉及一种电极结构,更详细来说,涉及一种薄膜晶体管的电极结构。 The present invention relates to an electrode structure, and more specifically, relates to an electrode structure of a thin film transistor.

背景技术 Background technique

近年来,平面显示器的发展越来越迅速,已经逐渐取代传统的阴极射线 In recent years, development of flat panel displays more quickly, it has gradually replaced conventional cathode ray

管显示器。 Tube display. 现今的平面显示器主要有下列几种:有机发光二极管显示器(Organic Light-Emitting Diodes Display; OLED)、等离子体显示器(Plasma Display Panel; PDP)、液晶显示器(Liquid Crystal Display; LCD)以及场发射显示器(Field Emission Display; FED)等。 Today's flat panel display main are the following: an organic light emitting diode display (Organic Light-Emitting Diodes Display; OLED), a plasma display (Plasma Display Panel; PDP), liquid crystal display (Liquid Crystal Display; LCD) and a field emission display ( Field Emission Display; FED) and the like. 其中控制这些平面显示器中每个像素开启与关闭的薄膜晶体管(TFT),即为这些平面显示器中相当关键性的元件之一。 Wherein the control plane of each pixel display opening and a thin film transistor (TFT) is closed, one of these flat panel displays is the relatively critical element.

如图1所示, 一般薄膜晶体管的电极结构1包括栅极电极10、源极电极11、漏极电极12及半导体层13。 1, the electrode structure of a general thin film transistor comprises a gate electrode 10, source electrode 11, the drain electrode 12 and the semiconductor layer 13. 该半导体层13形成在该栅极电极10之上, 该源极电极11和该漏极电极12形成在该半导体层13的部分上,且彼此分隔并分别与该栅极电极IO部分重迭。 The semiconductor layer 13 is formed over the gate electrode 10, the source electrode 11 and the drain electrode 12 is formed on a portion of the semiconductor layer 13, and are spaced from each other and overlap with the gate electrode portion IO. 一般而言,源极电极宽度LS和漏极电极宽度LD都约为4微米,利用这种尺寸的电极结构的薄膜晶体管,完成控制像素的开启与关闭的功能。 In general, the source electrode and the drain electrode width LS LD widths are about 4 microns, a thin film transistor using an electrode structure of this size, complete control of the pixel on and off functions.

然而,在电流由漏极电极12流至源极电极11时,由漏极电极12的圓弧部分15流出的电流仅能流入源极电极11的圆头部分14;但是源极电极11的圓头部分14对于漏极电极12的圓弧部分15而言,其相对重迭区域非常有限,且此圓头部分14极易受到工艺变异的影响,进而阻止正常电流传输。 However, a current flows from the drain electrode 12 to the source electrode 11, a current flows from the drain electrode 15 of the arc portion 12 can only flow into the ball portion 14 of the source electrode 11; however, the source electrode 11 of circular head portion 14 to the arcuate portion of the drain electrode 12 in terms of 15, the relative overlap area is very limited, and this round portion 14 is highly susceptible to process variations, thereby preventing transmission of the normal current. 此将严重影响电流量,且造成电流不稳定。 This will seriously affect the amount of current and unstable current.

因此要如何增加并稳定漏极电极12流向源极电极11的电流量,以使显示器的TFT电性传输无虞且较为稳定,即为需要努力和改善的目标。 How to increase and thus stabilize the drain electrode 12 to the source electrode 11 of the current, so that the electrical transmission TFT displays no fear and more stable, and the target is the need to work to improve.

发明内容本发明的目的在于提供一种晶体管的电极结构,通过改变其中两个电极的相对尺寸关系,以提高并稳定电极间所传递的电流量。 Object of the present invention is to provide an electrode structure of a transistor, wherein by changing the relationship between the relative sizes of the two electrodes, in order to improve and stabilize the current between the electrodes passed.

上述电极结构,包括第一电极和第二电极。 The electrode structure comprising a first electrode and a second electrode. 该第一电极具有至少两个第一区域和至少一个第二区域。 At least two of the first electrode having a first area and at least a second region. 各该第一区域互相平行且具有第一宽度,该第 Each of the first region having a first width and parallel to each other, the first

二区域具有第二宽度,并连接该第一区域,以便于界定出具有开口的空间。 The second region having a second width, and connected to the first region, so as to define a space opening. 该第二电极透过该开口,设置在部分该空间中。 The second electrode through the opening, disposed in the space portion. 其中,该第一宽度实质上大于该第二宽度。 Wherein the first width is substantially greater than the second width.

实现上述目的的另一种实施方式,是该电极结构,包括第一电极和第二电极。 Another embodiment to achieve the above object, that the electrode structure comprises a first electrode and a second electrode. 该第一电极具有至少两个第一区域和至少一个第二区域。 At least two of the first electrode having a first area and at least a second region. 各该第一区域互相平行且具有第一宽度,该第二区域具有第二宽度,并连接该第一区域, 以便于界定出具有开口的空间。 Each of the first region having a first width and parallel to each other, the second region having a second width, and connected to the first region, so as to define a space opening. 该第二电极具有本体和端部区域,该端部区域透过该开口,设置在部分该空间中,而该端部区域的宽度比该本体的宽度大。 The second electrode having a body portion and an end region, the end region of the through opening, provided in the space portion, and the width of the end region larger than the width of the body.

本发明的另一目的在于提供一种像素结构,包括前段所述的任一晶体管的电极结构。 Another object of the present invention is to provide a pixel structure, an electrode structure comprising a transistor according to any of the preceding paragraph.

本发明的另一目的在于提供一种显示装置,包括前段所述的任一晶体管的电极结构。 Another object of the present invention is to provide a display device, comprising an electrode structure of a transistor according to any of the preceding paragraph.

本发明通过改变晶体管的电极结构中的电极宽度来提高并稳定电极间所传递的电流,且使得电极间沟道长度仍然可以保持在设计法则的规定中。 The present invention is to increase the current flowing between the electrodes and delivered through the electrode width of the electrode structure stable transistor is changed, and such that the channel length between electrodes may be maintained at a predetermined still in the design rules. 如此一来,即可在不改变设计法则的规定下,实现提高并稳定电流量的目的。 In this way, you can not change the law under the provisions designed to achieve the purpose of improving and stabilizing the amount of current.

在参阅附图及随后描述的实施方式后,该技术领域的普通技术人员便可了解本发明的其它目的,以及本发明的技术手段和实施方式。 After referring to the accompanying drawings and embodiments to be described later, the art of ordinary skill in the art can understand the other objects of the present invention, as well as technology and embodiments of the present invention.

附图说明 BRIEF DESCRIPTION

图1为现有薄膜晶体管的电极结构示意图; 图2A为本发明电极结构第一实施例的示意图; 1 is a schematic electrode structure of a conventional thin film transistor; FIG. 2A is a schematic view of a first embodiment of the electrode structure of the present invention;

图2B为本发明电极结构第一实施例中,连接部位在另一位置的示意图; 图3A为本发明电极结构第二实施例的示意图; The electrode structure of FIG. 2B in the first embodiment of the present invention, a schematic view of another connecting portion in position; FIG. 3A is a schematic diagram of an electrode structure of a second embodiment of the invention;

图3B为本发明电极结构第二实施例中,连接部位在另一位置的示意图; 图4A为本发明电极结构第三实施例的示意图;及图4B为本发明的第三实施例中,连接部位在另一位置的示意图;图5为不同晶体管间,其漏极电极电流ID对漏极电极电压VD的实验曲线图; 3B, a second embodiment of the present invention, the electrode structure of the embodiment, the connecting portion of the schematic diagram of another position; FIG. 4A is a schematic view of a third embodiment of an electrode structure of the invention; FIG. 4B and the third embodiment of the present invention, the connection in another portion of the schematic position; FIG. 5 is a different transistor having a drain electrode current ID experimental plot of the drain voltage VD of the electrode;

图6为不同晶体管间,其漏极电极电流ID对漏极电极电压VD的另一实验曲线图;和 FIG 6 is a different transistor having a drain electrode current ID another experimental plot of the drain voltage VD of the electrode; and

图7为本发明的电极结构与显示装置间的关系示意图, Apparatus showing the relationship between an electrode structure of the present invention and FIG. 7 shows

简单符号说明 Simple Symbol Description

l二 薄膜晶体管的电极结构 10: 栅极电极 L two electrode structures 10 of the thin film transistor: the gate electrode

11: 源极电极 12: 漏极电极 11: source electrode 12: drain electrode

13: 半导体层 14: 源极电极的圓头部分 13: round portion of the source electrode: semiconductor layer 14

15: 漏极电极的圓弧部分 LS: 源极电极宽度 15: drain electrode arc portion LS: a source electrode width

LD: 漏极电极宽度 2r 晶体管的电极结构 LD: the width of the electrode structure of the drain electrode of transistor 2r

20: 栅极电极 21: 源极电极 20: gate electrode 21: source electrode

22: 漏极电极 23: 预定材料层 22: drain electrode 23: a predetermined material layer

220、 221:第一区域 222: 第二区域 220, 221: first area 222: second region

223: 连接部 LS: 源极电极宽度 223: connecting portion LS: a source electrode width

LD1: 第一宽度 LD2: 第二宽度 LD1: a first width LD2: second width

3: 晶体管的电极结构 30: 栅极电极 3: an electrode structure of the transistor 30: gate electrode

31: 源极电极 32: 漏极电极 31: source electrode 32: drain electrode

33: 预定材料层 310: 本体 33: a predetermined material layer 310: main body

311: 端部区域 320、 321:第一区域 311: end region 320, 321: a first area

322: 第二区域 323: 连接部 322: second region 323: connecting portion

4: 晶体管之电极结构 40: 栅极电极 4: an electrode structure of a transistor 40: gate electrode

41: 源极电极 42: 漏极电极 41: source electrode 42: drain electrode

43: 预定材料层 410: 本体 43: a predetermined material layer 410: main body

411: 端部区域 420、 421:第一区域 411: end region 420, 421: a first area

422: 第二区域 423: 连接部 422: second region 423: connecting portion

7: 显示装置 71: 像素结构 7: Display device 71: a pixel structure

LSI: 端部区域宽度 LS2: 本体宽度 LSI: end zone width LS2: width of the body

LD1: 第一宽度 LD2: 第二宽度具体实施方式 LD1: LD2 first width: the width of the second embodiment DETAILED DESCRIPTION

为便于理解,所述的第一电极和第二电极都以较常见实施方式的漏极与源极进行说明。 For ease of understanding, the first and second electrodes are more common to the drain and source electrode embodiment will be described.

本发明的第一实施例如图2A及图2B所示,为一种晶体管的电极结构2, 其包括栅极电极20、源极电极21、漏极电极22和预定材料层23。 For example, a first embodiment of the present invention shown in FIG. 2A and FIG. 2B, an electrode structure of a transistor 2, which includes a gate electrode 20, source electrode 21, the drain electrode 2322 and a predetermined material layer. 预定材料层23形成在栅极电极20之上,源极电极21和漏极电极22形成在部分的预定材料层23上,且彼此分隔并分别与栅极电极20部分重迭。 Predetermined material layer 23 is formed over the gate electrode 20, source electrode 21 and the drain electrode 22 are formed on a predetermined portion of the material layer 23, and are spaced from each other and overlap the portion of the gate electrode 20. 漏极电极22 具有两个第一区域220、221、一个第二区域222和连接部223。 The drain electrode 22 has two first regions 220, 221, 222 and a second region of the connecting portion 223. 第一区域220、 221互相平行,并且都具有第一宽度LDl,第二区域222具有第二宽度LD2, 并连接第一区域220、 221,用以使漏极电极22界定出具有开口的空间。 A first region 220, 221 parallel to each other, and having a first width LDL, a second region 222 having a second width LD2, and connecting a first region 220, 221 to the drain electrode 22 defines a space having an opening. 而在本实施例当中,第一宽度LD1实质上大于第二宽度LD2。 In the present embodiment, among the first width is substantially greater than the second width LD1 LD2.

第一实施例所述的晶体管的电极结构2其中一种方式如图2A所展示, 将漏极电极22的连接部223连接到第二区域222。 Electrode structure of the first embodiment of the transistor according to one embodiment 2 shown in FIG. 2A, the second region 223 is connected to the connection portion 222 of the drain electrode 22. 而另一种方式则如图2B 所展示,将漏极电极22的连接部223连接到第一区域220。 The other way is shown in FIG. 2B, the first region 223 is connected to the connection portion 220 of the drain electrode 22. 而在本实施例之中,源极电极21的宽度LS实质上与第一宽度LD1相等。 In the embodiment in the present embodiment, the source electrode is substantially equal to the width of the LS 21 and the first width LD1.

第一实施例各种l^t将进行如下的例示说明:第一宽度LD1和源极电极21的宽度LS实质上为4微米,第二宽度LD2实质上为2微米至3.8微米。 The first embodiment of the various l ^ t as follows for illustrative: width LS LD1 first width and the source electrode 21 is substantially 4 micrometers, a second width substantially LD2 2 microns to 3.8 microns. 因此,第一宽度LD1与第二宽度LD2实质上相差0.2微米至2微米;源极电极21的宽度LS与第二宽度LD2实质上相差0.2微米至2微米,换句话说, 第二宽度LD1实质上等于第一宽度LD1减去至少0.2微米的差异,可用下列方程式来表示:LD2=LDl-n,其中,n为大于或等于0.2的自然数。 Thus, the first width and the second width LD1 LD2 differ substantially 0.2 to 2 microns; width LS and the source electrode 21 is substantially the second width difference LD2 0.2 to 2 microns, in other words, the substance of the second width LD1 a first width equal to the difference LD1 subtract at least 0.2 microns, expressed in the following equation: LD2 = LDl-n, where, n-natural number greater than or equal to 0.2. 举例而言,若n-0.2,LD14,则LD2-3.8;若nl,LDl-4,则LD2-3;若n=0.4, LD1=5,则LD2^.6;若11=1.25, LD1=4,贝'J LD2-2.75,若11=1, LDl-3, 则LD2-2,可依设计的需求来加以改变,且需注意的是第二宽度LD1,也可以源极电极21的宽度LS减去至0.2微米的差异,可用下列方程式来表示: LD2=LS-n,其中,n为大于或等于0.2的自然数,在此不再赘言。 For example, if n-0.2, LD14, the LD2-3.8; if nl, LDl-4, the LD2-3; if n = 0.4, LD1 5, the LD2 ^ .6 =; if 11 = 1.25, LD1 = 4, shell 'J LD2-2.75, if 11 = 1, LDl-3, is a LD2-2, according to design needs to be changed, and the second width is noted that LD1, may be the source electrode 21, the width subtracting the difference LS to 0.2 microns, can be represented by the following equation: LD2 = LS-n, where, n-natural number greater than or equal to 0.2, which is not to say. 经过计算可以得知,第一宽度LD1与第二宽度LD2的比值实质上为1.05至2;源极电极21的宽度LS与第二宽度LD2的比值实质上也为1.05至2。 After calculation can be known, the first width and the second width LD1 LD2 ratio substantially from 1.05 to 2; the source electrode and the width of the LS 21 of the second width is substantially the ratio of LD2 is also from 1.05 to 2.

本发明的第二实施例如图3A和图3B所示,为一种晶体管的电极结构3, 其包括栅极电极30、源极电极31、漏极电极32和预定材料层33。 The second embodiment of the present invention is shown in FIGS. 3A and 3B, the electrode structure of a transistor 3, including a gate electrode 30, source electrode 31, drain electrode 32 and a predetermined material layer 33. 预定材料层33形成在栅极电极30之上,源极电极31和漏极电极32形成在部分的预定材料层33上,且彼此分隔并分别与栅极电极30部分重迭。 Predetermined material layer 33 is formed over the gate electrode 30, source electrode 31 and the drain electrode 32 is formed on a predetermined portion of the material layer 33, and are spaced from each other and overlap the portion of the gate electrode 30. 漏极电极32 具有两个第一区域320、321、一个第二区域322及连接部323。 The drain electrode 32 has two first regions 320, 321, 322, and a second region of the connecting portion 323. 第一区域320、 321互相平行,并且都具有第一宽度LD1,第二区域322具有第二宽度LD2, 并连接第一区域320、 321,用以使漏极电极32界定出具有开口的空间。 A first region 320, 321 parallel to each other, and having a first width LD1, a second region 322 having a second width LD2, and connecting a first region 320, 321, the drain electrode 32 to define a space having an opening. 源极电极31具有本体310和端部区域311,端部区域311设置在部分的漏极电极32所界定的具有开口的空间。 The source electrode 31 has a body portion 310 and the end regions 311, end region 311 is provided in a space having an opening portion of the drain electrode 32 is defined. 而在本实施例当中,第一宽度LD1实质上等于第二宽度LD2,端部区域311的宽度LSI比本体310的宽度LS2大, 且端部区域311的宽度LS1实质上大于第一宽度LD1和第二宽度LD2。 In the present embodiment, among the first width is substantially equal to the second width LD1 LD2, the width of the LSI 311 of the end region larger than the width of the body 310 LS2 and LS1 is the width of the end region 311 is substantially larger than the first width and LD1 a second width LD2.

第二实施例所述的晶体管的电极结构3其中一种方式如图3A所展示, 将漏极电极32的连接部323连接到第二区域322。 The second embodiment of the electrode structure of the transistor 3 in FIG. 3A one embodiment illustrated, the connection portion 323 connecting the drain electrode 32 to the second region 322. 而另一种方式则如图3B 所展示,将漏极电极32的连接部323连接到第一区域320。 The other way is shown in FIG. 3B, the connector 323 is connected to the first region 320 of the drain electrode 32.

第二实施例的各种参数将进行如下的例示说明:第一宽度LD1和第二宽度LD2实质上为4微米,源极电极31的端部区域311的宽度LS1实质上为4.2微米至8微米,源极电极31的本体310的宽度LS2实质上为4微米至6微米。 Various parameters of the second embodiment will be explained as exemplified: a first width and second width LD1 LD2 substantially 4 m, the end region 31 of the source electrode 311 LS1 width substantially 4.2 to 8 microns , the source electrode 31 of the width of the body LS2 310 is substantially 4 to 6 microns. 因此,端部区域311的宽度LS1与本体310的宽度LS2实质上相差0.2微米至4微米;端部区域311的宽度LS1与第一宽度LD1实质上相差0.2微米至4微米。 Thus, the width of the end regions 311 LS2 LS1 and the width of the body 310 differ substantially 0.2 to 4 microns; width of the end region 311 of the first width LD1 LS1 differ substantially 0.2 to 4 microns. 换句话说,端部区域311的宽度LS1实质上等于本体LS2 加上至少0.2微米的差异,可用下列方程式来表示:LS1= LS2+n,其中,n 为大于或等于0.2的自然数。 In other words, the end region 311 of a width substantially equal to the difference LS1 LS2 body plus at least 0.2 microns, expressed in the following equation: LS1 = LS2 + n, where, n-natural number greater than or equal to 0.2. 举例而言,若11=0.2, LS2=4,则LS1=4.2;若n=l,LS2=4,贝'J LS1=5;若n=0.2, LS2=6,贝'J LS1=6.2;若n-1.25, LS2=4, 则LS1=5.25,若11=1, LS2=3,则LS1=4,可依设计的需求来加以改变,且需注意的是,端部区域311的宽度LSI也可以第一宽度LD1加上至少0.2 微米的差异,可用下列方程式来表示:LSl=LDl+n,其中,n为大于或等于0.2的自然数,在此不再赘言。 For example, if 11 = 0.2, LS2 = 4, then LS1 = 4.2; if n = l, LS2 = 4, Tony 'J LS1 = 5; if n = 0.2, LS2 = 6, Tony' J LS1 = 6.2; If the n-1.25, LS2 = 4, then LS1 = 5.25, if 11 = 1, LS2 = 3, then LS1 = 4, according to design needs to be changed, and should be noted that, the width of the end region 311 of the LSI LD1 first width may be at least 0.2 microns plus the difference, represented in the following equation: LSl = LDl + n, where, n-natural number greater than or equal to 0.2, which is not to say. 经过计算可以得知,端部区域311的宽度LS1 与本体310的宽度LS2的比值实质上为1.03至2;端部区域311的宽度LS1 与第一宽度LD1的比值实质上为1.05至2。 After calculation can be known, the end region 311 of the width LS2 LS1 and the width of the body 310 is substantially the ratio of 1.03 to 2; the width of the end region 311 of the first LS1 LD1 width ratio substantially from 1.05 to 2.

本发明的第三实施例如图4A及图4B所示,为一种晶体管的电极结构4, 其包括栅极电极40、源极电极41、漏极电极42及预定材料层43。 The third embodiment of the present invention is shown in FIGS. 4A and 4B, the electrode structure of a transistor 4, including a gate electrode 40, source electrode 41, the drain electrode 42 and a predetermined material layer 43. 预定材料层43形成在栅极电极40之上,源极电极41和漏极电极42形成在部分的预定材料层43上,且彼此分隔并分别与栅极电极40部分重迭。 Predetermined material layer 43 is formed over the gate electrode 40, source electrode 41 and the drain electrode 42 is formed on a predetermined portion of the layer of material 43, and are spaced from each other and overlap with portions of the gate electrode 40. 漏极电极42 具有两个第一区域420、 421 、 一个第二区域422和连接部423 。 The drain electrode 42 has two first regions 420, 421, 422 and a second region of the connecting portion 423. 第一区域420、421互相平行,并且都具有第一宽度LDl,第二区域422具有第二宽度LD2, 并连接第一区域420、 421,用以使漏极电极42界定出具有开口的空间。 A first region 420, 421 parallel to each other, and having a first width LDL, a second region 422 having a second width LD2, and connecting a first region 420, 421 to the drain electrode 42 defines a space having an opening. 源极电才及41具有本体410和端部区域411,端部区域411 i殳置在部分的漏极电极42所界定的具有开口的空间。 Before and 41 electrically source body 410 having a region 411 and an end portion, the end portion of the spatial region 411 I Shu disposed in the drain electrode portion 42 having an opening defined. 而在本实施例当中,第一宽度LD1实质上大于第二宽度LD2,端部区域411的宽度LS1比本体410的宽度LS2大, 且端部区域411的宽度LS1实质上大于第一宽度LD1。 In the present embodiment, among the first width is substantially greater than the second width LD1 LD2, LS1 width of the end region 411 is larger than the width of the body 410 LS2, LS1 and the width of the end portion of the first region 411 is substantially greater than the width LD1.

第三实施例所述的晶体管的电极结构4其中一种方式如图4A所展示, 将漏极电极42的连接部423连接到第二区域422。 Electrode structure of a transistor according to the third embodiment shown in FIG 4, one of the ways illustrated 4A, the second region 423 is connected to the connection portion 422 of the drain electrode 42. 而另一种方式则如图4B 所展示,将漏极电极42的连接部423连接到第一区域420。 The other way is illustrated in FIG. 4B, the connector 423 is connected to the first region 420 of the drain electrode 42.

第三实施例的各种参数将进行如下的例示说明:第一宽度LD1实质上为4微米,第二宽度LD2实质上为2微米至3.8微米,源极电极41的端部区域411的宽度LSI实质上为4.2微米至8微米,源极电极41的本体410 的宽度LS2实质上为4微米至6微米。 Various parameters of the third embodiment will be explained as exemplified: a first substantially 4 m width LD1, LD2 second width substantially 2 microns to 3.8 microns, the source electrode 41 and the width of the end region of the LSI 411 substantially 4.2 to 8 microns, the width of the source electrode 41 LS2 body 410 is substantially 4 to 6 microns. 因此,端部区域411的宽度LS1与本体410的宽度LS2实质上相差0.2微米至2微米;端部区域411的宽度LS1 与第一宽度LD1实质上相差2.2微米至4微米;第一宽度LD1与第二宽度LD2实质上相差0.2微米至2微米。 Thus, the end region 411 of the width LS2 LS1 and the width of the body 410 differ substantially 0.2 to 2 microns; width LS1 and the first end region 411 width LD1 differ substantially 2.2 to 4 microns; LD1 and a first width LD2 second width substantially differ 0.2 to 2 microns. 换句话说,端部区域411的宽度LS1实质上等于本体LS2加上至少0.2微米的差异,可用下列方程式来表示:LS1= LS2+n,其中,n为大于或等于0.2的自然数。 In other words, the width of the end portion LS1 region 411 is substantially equal to the difference body LS2 plus at least 0.2 microns, expressed in the following equation: LS1 = LS2 + n, where, n-natural number greater than or equal to 0.2. 举例而言,若n=0.2, LS2=4, 则LS 1=4.2;若11=1, LS2=4,则LS1=5;若n=0.2, LS2=6,则LS1=6.2;若n=1.25, LS2=4,贝'J LS1=5.25,若n二l, LS2=3,贝'J LS1=4,可依i殳计的需求来加以改变,且需注意的是端部区域411的宽度LSl,也可以第一宽度LDl 加上至少0.2微米的差异,可用下列方程式来表示:LS1= LDl+n,其中,n 为大于或等于0.2的自然数,在此不再赘言。 For example, if n = 0.2, LS2 = 4, then the LS 1 = 4.2; if 11 = 1, LS2 = 4, then LS1 = 5; if n = 0.2, LS2 = 6, then LS1 = 6.2; if n = 1.25, LS2 = 4, Tony 'J LS1 = 5.25, if n = l, LS2 = 3, shellfish' J LS1 = 4, i Shu meter needs to follow to be varied and is noted that the end region 411 of the LS1 width, the first width may be at least 0.2 microns LDL plus the difference, represented in the following equation: LS1 = LDl + n, where, n-natural number greater than or equal to 0.2, which is not to say. 第二宽度LD1实质上等于第一宽度LD1减上至少0.2微米的差异,可用下列方程式来表示:LD2=LDl-n, 其中,n为大于或等于0.2的自然数。 The second width is substantially equal to the first width LD1 LD1 the difference is at least 0.2 micron reduction, expressed in the following equation: LD2 = LDl-n, where, n-natural number greater than or equal to 0.2. 举例而言,若n=0.2, LD1=4,则LD2=3.8; 若n=l, LD1=4,贝ll UD2=3;若n=0.4, LD1=5,贝'J LD2=4.6;若n=1.25, LD1=4, 贝寸LD2二2.75,若11=1, LD1=3,贝'J LD2=2,可依设计的需求来加以改变,且需注意的是第二宽度LDl,也可以本体LS2减去至0.2微米的差异,可用下列方程式来表示:LD2=LS2-n,其中,n为大于或等于0.2的自然数,在此不再赘言。 For example, if n = 0.2, LD1 = 4, the LD2 = 3.8; if n = l, LD1 = 4, shell ll UD2 = 3; if n = 0.4, LD1 5, Tony 'J LD2 = 4.6 =; if n = 1.25, LD1 = 4, LD2 two 2.75-inch shell, if 11 = 1, LD1 = 3, shellfish 'J LD2 = 2, according to design needs to be changed, and the second width is noted that the LDL, also LS2 difference by subtracting the body to be 0.2 m, represented in the following equation: LD2 = LS2-n, where, n-natural number greater than or equal to 0.2, which is not to say. 经过计算可以得知,端部区域411的宽度LS1与本体410的宽度LS2的比值实质上为0.7至2;端部区域411的宽度LS1与第一宽度LD1的比值实质上为1.05至2;第一宽度LD1与第二宽度LD2的比值实质上则为1.05至2。 After calculation can be known, LS2 ratio of the width 411 of the body 410 LS1 width end region substantially from 0.7 to 2; LS1 width of the end region 411 and the LD1 of the ratio of the first width is substantially from 1.05 to 2; the first a ratio of the width of the second width LD1 LD2 was substantially 1.05 to 2.

图5和图6是展示各种不同形式的晶体管,在控制像素开启与关闭时的漏极电极电流(ID)对漏极电极电压(VD)曲线图;其中,图5是展示像素为全暗时,ID对VD的曲线图,图6则展示像素单位面积的发光强度为5000尼特(nit)时,ID对VD的曲线图。 Figures 5 and 6 show various forms of the transistor, the drain electrode of the graph of the voltage (VD) in the drain electrode current (ID) when controlling the on and off pixels; wherein, Fig. 5 is a dark pixel for the whole when, on the ID of VD graph, FIG 6 shows the light emission intensity of pixels per unit area of ​​5000 nit (nit), ID is a graph of the VD.

详细地讲,参阅图5,元件符号510、 511、 512为栅极电极电压(VG) 为10伏特时,各种不同形式的晶体管的ID对VD曲线,其中元件符号510 为使用图1的电极结构1的晶体管,元件符号511为使用图2A的电极结构2的晶体管,元件符号512为使用图4A的电极结构4的晶体管。 In detail, referring to Figure 5, reference numerals 510, 511, 512 a gate electrode voltage (VG) is 10 volts, the transistors of the various forms of ID VD curve, wherein the reference numerals used for the electrode 510 of FIG. 1 transistor structure 1, reference numerals 511 using an electrode structure of a transistor in FIG. 2A, reference numerals 512 to 2 using an electrode structure of the transistor 4 in FIG. 4A. 元件符号520、 521、 522是VG为20伏特时,各种不同形式的晶体管的ID对VD曲线,同样的,元件符号520、 521、 522分别为使用图l的电极结构l、图2A 的电极结构2、图4A的电极结构4的晶体管。 Element symbols 520, 521, 522 is the VG is 20 volts, the transistors of the various forms of ID VD curve of the same, reference numerals 520, 521, 522 respectively, the electrode structure of Figure l l using the electrode of FIG. 2A the structure electrode 2, a transistor 4 of FIG. 4A. 元件符号530、 531、 532是VG为30伏特的类似结果。 Element symbols 530, 531, 532 are similar to the results of VG 30 volts.

参阅图6,元件符号610、 611、 612为栅极电极电压(VG)为10伏特时,各种不同形式的晶体管的ID对VD曲线,其中元件符号610为使用图1 的电极结构1的晶体管,元件符号611为使用图2A的电极结构2的晶体管, 元件符号612为使用图4A的电极结构4的晶体管。 Referring to Figure 6, reference numerals 610, 611, 612 when the gate electrode voltage (VG) of 10 volts, a variety of different forms of ID to VD curve of the transistor, wherein the reference numerals 610 of FIG. 1 using the electrode structure of the transistor 1 , reference numerals 611 using an electrode structure of a transistor in FIG. 2A, reference numerals 612 to 2 using an electrode structure of the transistor 4 in FIG. 4A. 元件符号620、 621、 622 是VG为20伏特时,各种不同形式的晶体管的ID对VD曲线,同样的,元件符号620、 621、 622分别为使用图1的电极结构1、图2A的电极结构2、 图4A的电极结构4的晶体管。 Element symbols 620, 621, 622 is the VG is 20 volts, the transistors of the various forms of ID VD curve, similar, reference numerals 620, 621, 622 respectively, using an electrode structure of an electrode 1 of FIG. 1, FIG. 2A the structure electrode 2, a transistor 4 of FIG. 4A. 元件符号630、 631、 632是VG为30伏特的类似结果。 Element symbols 630, 631, 632 are similar to the results of VG 30 volts.

进行前述各种不同实验中,电极结构的晶体管的参考尺寸如下:使用图1的电极结构1的晶体管的源极电极11的宽度LS和漏极电极12的宽度LD 都为4微米。 For the various experiments, the transistor size of the reference electrode structure is as follows: the source electrode of the transistor of the electrode structure of FIG. 1 1 LS 11 and the width of the width of the drain electrode 12 are LD 4 microns. 使用图2A的电极结构2的晶体管的源极电极21的宽度LS和漏极电极22的第一宽度LD1都为4微米,而漏极电极22的第二宽度LD2 则为3微米。 FIG 2A structure the source electrode of transistor 2 and the source electrode width of the first width LD1 21 LS drain electrode 22 are 4 microns, and the width of the drain electrode 22 of the second LD2 is 3 microns. 使用图4A的电极结构4的晶体管的源极电极41的本体410 的宽度LS2和漏极电极42的第一宽度LD1都为4微米,源极电极41的端部区域411的宽度LS1为5微米,而漏极电极42的第二宽度LD2则为3微米。 LS1 5 microns width end region of FIG. 4A electrode structure of the source of the transistor 41, the source electrode 4 LS2 width of the body 410 and the drain electrode of the first width LD1 42 are 4 microns, the source electrode 41 of the 411 while the drain electrode of the second width LD2 42 is 3 microns.

由前述的图5和图6可以得知,相对于现有技术(图1),使用具有本发明特征电极结构(如第2A、 4A图)的晶体管,足以明显地提高电极间(即上迷的漏极电极和源极电极间)所传递的电流量。 Can be known from the above-described FIGS. 5 and 6, with respect to the prior art (FIG. 1), using an electrode structure having features of the present invention (e.g., the first 2A, 4A in FIG.) Of the transistor, enough to significantly improve the inter-electrode (i.e., the above- drain electrode and the source between the electrodes) the amount of current delivered.

参阅图7,前段所述的第一实施例和第二实施例的晶体管的电极结构2、 3、 4均可以使用于一种显示装置7中,该显示装置7包括像素结构71,像素结构71中还包括信号线(未图标),均与漏极电极22、 32的连接部223、 323连接。 Referring to Figure 7, the electrode structure of the transistor according to the preceding first embodiment and the second embodiment 2, 3, 4 can be used in a display device 7, the display device 7 comprises a pixel structure 71, the structure of the pixel 71 also includes a signal line (not shown) are connected to the drain electrode 22, the connecting portion 32 of the 223, 323. 前述的显示装置包括屏幕、电视、笔记型计算机、触控式面板(touch panel)、携带式电子产品的显示屏(如:移动电话、数字相机、数字录像机、 数字影音拨放机、数字秘书(如:PDA(个人数字助理)、黑莓机(black berry) 或其它类似的产品)、掌上型游戏机(如:GameBoy、 PSP(playstationportable)、 NintendoDS Lite或其它类似的游戏机))、汽车影音装置、户外或室内显示板、 户外或室内指示板等各种可供显示的显示装置。 The display device includes a screen, television, laptop computer, touch panel (touch panel), the portable electronic display products (such as: mobile phones, digital cameras, digital video recorders, digital audio and video Bofang, a digital Secretary ( such as: PDA (personal digital assistant), Blackberry (black berry) or other similar products), handheld game consoles (such as: GameBoy, PSP (playstationportable), NintendoDS Lite or other similar gaming machines)), car audio and video devices display means for displaying various outdoor or indoor display panel, outdoors or indoors for indicating plate. 除了上述的显示装置运用类型之外,也包括不同种类的显示装置,所述显示装置包括有机发光二极管显示器(Organic Light-Emitting Diodes Display; OLED)、等离子体显示器(Plasma Display Panel; PDP)、液晶显示器(Liquid Crystal Display; LCD)以及场发射显示器(Field Emission Display; FED)等。 In addition to the use of display device types, including different types of display device, said display device comprises an organic light emitting diode display (Organic Light-Emitting Diodes Display; OLED), a plasma display (Plasma Display Panel; PDP), liquid crystal a display (Liquid Crystal display; LCD) and a field emission display (field emission display; FED) and the like. 以上叙述仅就本发明的特征电极结构予以说明,关于像素结构、显示装置等一舦基本架构,因非属本案特征, 且也为本技术领域普通技术人员可予理解的技术架构,在本案中则不另赘述。 Far above recited features of the electrode structure of the present invention to be described, and the structure of the pixel, a display apparatus or the like Tai basic structure, characterized by a non-metal case, and are also known to those of ordinary skill in the art may be appreciated technical architecture, in this case It is not repeated herein.

再者,必需说明的是,上述实施例的附图,均以趋近于U型为漏极电极的范例,然而漏极电极的型态并不限于此,只要能被本发明实施例的描述所涵盖者(如C型或其它方式),均为可以替代的方案。 Furthermore, it is necessary that the description, the drawings of the embodiments described above, are examples of approaches to the U-shaped drain electrode, the drain electrode patterns but is not limited to this, embodiments of the present invention can be described covered by (e.g., C-shaped, or otherwise), alternative solutions are possible. 并且,该电极结构可适用的晶体管类型,包括底栅型(如:背沟道蚀刻型(BCE)、蚀刻终止型(Etching-stopper))、顶栅型(top-gate)或其它类似的类型。 Further, the electrode structure is applicable type transistor, comprising a bottom gate type (eg: a back channel etch (BCE), the etch stop type (Etching-stopper)), a top-gate (top-gate), or other similar types of . 此外,上述本发明实施例的预定材料层,以半导体层为范例说明,然而也并不限于该型态,也可包括介电层或上述的组合。 Further, a predetermined material layer according to embodiments of the present invention to be described as an example of the semiconductor layer, but is not limited to this type, or a combination thereof may also comprise a dielectric layer. 半导体层的材料包括非晶硅、多晶硅、微晶硅、 单晶硅或上述的组合,且半导体层也可掺杂N型掺杂剂、P型掺杂剂或上述的组合。 Material of the semiconductor layer comprises amorphous silicon, polycrystalline silicon, microcrystalline silicon, monocrystalline silicon, or combinations thereof, and the semiconductor layer may be doped with an N type dopant, P-type dopant or a combination thereof. 当半导体层掺杂掺杂剂时,该掺杂剂可为水平式掺杂或垂直式掺杂在部分的半导体层中,并且,该掺杂子的浓度也可随着其水平式或垂直式方向增加或减少。 When the semiconductor layer is doped with a dopant, the dopant may be doped to horizontal or vertical portion of the doped semiconductor layer, and the concentration of the promoter may also be doped with its horizontal or vertical increase or decrease direction. 然而,半导体层也可区分为数个分层,且前述的掺杂剂也可掺杂于至少一个分层中。 However, the semiconductor layer may be divided into several strata, and the dopant may be doped with at least one hierarchy. 介电层的材料包括氮化硅、氧化硅、氮氧化硅、有机化合物或上述的组合。 Material of the dielectric layer include silicon nitride, silicon oxide, silicon oxynitride, an organic compound or a combination thereof. 另外,上述实施例的附图,均以栅极电极20、 30、 40的宽度实质上大于预定材料层23、 33、 43的宽度为实施范例,然而,该栅极电极20、 30、 40的宽度也可实质上小于或等于预定材料层23、 33、 43的宽度。 Further, the above-described embodiments of the drawings, are the width of the gate electrode 20, 30, 40 is substantially greater than a predetermined material layer 23, width 33, 43 of the example embodiment, however, the gate electrode 20, 30, 40 width can be substantially smaller than or equal to a predetermined material layer 23, width 33, 43. 换言之, 栅极电极20、 30、 40的面积实质上大于预定材料层23、 33、 43的面积为实 In other words, the area of ​​the gate electrode 20, 30, 40 is substantially greater than a predetermined material layer 23, the area 33, 43 is solid

施范例,然而,该栅极电极20、 30、 40的面积也可实质上小于或等于预定材料层23、 33、 43的面积。 Shi example, however, the area of ​​the gate electrode 20, 30, 40 may also be substantially smaller than or equal to a predetermined area of ​​the layer of material 23, 33, 43. 此外,上述实施例的附图都是以第一宽度LD1、 源极电极21的宽度LS、源极电极31、 41的本体310、 410的宽度LS2都以4微米为实施范例和实验数据说明之,然而,只要能符合本发明所述的设计规则(design rule)并满足机器的分辨率(resolution),则电极结构所述的部分, 如:第一宽度LD1、源极电极21的宽度LS、源极电极31、 41的本体310、 410的宽度LS2都可使用其它尺寸大小,如:3微米、3.5微米、2微米、1 微米、1.25微米或其它的尺寸大小。 Further, the figures are based on the above-described embodiments a first width LD1, the width of the source electrode of the LS 21, the source electrode 31, the width of the body 41 LS2 310, 410 are described in the exemplary embodiment 4 micrometers and experimental data However, as long as the design rule compliance (design rule) according to the present invention is the machine satisfies resolution (resolution), the portion of the electrode structure, such as: a first width LD1, the width of the source electrode of the LS 21, the source electrode 31, the width of the body 41 LS2 310, 410 of other sizes may be used, such as: 3 microns, 3.5 micron, 2 micron, 1 micron, 1.25 micron, or other size.

由上述可知,本发明在制造晶体管时,通过改变原本晶体管电极结构中的固定电极宽度,来提高并稳定电极间(即上述的漏极和源极间)所传递的电流量,且使得电极间沟道长度仍然可以保持在业界设计法则的定义中,例如漏极电极22、 32、 42与源极电极21、 31、 41之间的距离仍保持在4微米。 From the foregoing, the present invention, when manufacturing a transistor, by changing the fixed electrode width of the electrode structure had a transistor, to improve and stabilize the current between the electrodes (i.e., above the drain to source) transmitted, and between the electrodes such that still maintained in the channel length can be defined design rules in industry, for example, the drain electrodes 22, 32, 42 and the source electrode 21, 31, the distance 41 remained at between 4 [mu] m. 如此一来,即可在不改变设计法则下,也可达到所需的技术突破目的。 In this way, you can not change the design under the law, but also to achieve the required technological breakthroughs purpose.

上述的实施例仅用来例举本发明的实施方式,以及阐释本发明的技术特征,并非用来限制本发明的范围。 The above examples merely example embodiments of the present invention, and explain features of the invention and are not intended to limit the scope of the invention. 任何本领域的技术人员可轻易完成的改变或其等同物均属于本发明所主张的范围,本发明的权利范围应以权利要求为准。 Anyone skilled in the art can easily complete the changes or equivalents thereof belong to the scope of the claimed invention, the scope of the invention as claimed in the claims should prevail.

Claims (30)

1、一种晶体管的电极结构,包括:第一电极,具有:至少两个第一区域,互相平行,且各该第一区域具有第一宽度;和至少一个第二区域,具有第二宽度,并连接所述第一区域,以便于界定出具有开口的空间;以及第二电极,透过该开口,设置在部分该空间中;其中,该第一宽度实质上大于该第二宽度,其中该第一宽度与该第二宽度的比值实质上为1.05至2。 1, an electrode structure of a transistor, comprising: a first electrode, comprising: at least two first regions, parallel to each other, and each of the first region having a first width; and at least one second region having a second width, and connecting the first region so as to define a space having an opening; and a second electrode through the opening, is provided in a portion of the space; wherein the first width is substantially greater than the second width, wherein the a ratio of the first width and the second width is substantially from 1.05 to 2.
2、 如权利要求1所述的晶体管的电极结构,其中该第一电极还具有连接部,与所述第一区域的其中之一连接。 2, the electrode structure as claimed in claim 1 transistor, wherein the first electrode further has a connecting portion connected to one of the first region.
3、 如权利要求1所述的晶体管的电极结构,其中该第一电极还具有与该第二区域连接的连接部。 3. The electrode arrangement of claim 1, claim transistor, wherein the first electrode further has a connecting portion connected to the second region.
4、 如权利要求1所述的晶体管的电极结构,其中该第一宽度与该第二宽度实质上相差0.2至2微米。 4. The electrode arrangement of claim 1, claim transistor, wherein the first width and the second width substantially differ 0.2 to 2 microns.
5、 如权利要求1所述的晶体管的电极结构,其中该第二电极的宽度实质上等于第一宽度。 5. The electrode arrangement of claim 1, claim transistor, wherein the second electrode is substantially equal to the width of the first width.
6、 如权利要求5所述的晶体管的电极结构,其中该第二电极的宽度与该第二宽度的比值实质上为1.05至2。 6, an electrode structure as claimed in claim 5, wherein a transistor, wherein the ratio of the width to the second width of the second electrode is substantially from 1.05 to 2.
7、 如权利要求5所述的晶体管的电极结构,其中该第二电极的宽度与该第二宽度实质上相差0.2至2微米。 7, electrode structure as claimed in claim 5, wherein the transistors, wherein the width and the second width of the second electrode differ substantially 0.2 to 2 microns.
8、 如权利要求1所述的晶体管的电极结构,其中该第一宽度实质上为4 微米。 8, the electrode structure as claimed in claim 1 transistor, wherein the first width is substantially 4 m.
9、 如权利要求1所述的晶体管的电极结构,其中该第二宽度实质上为2 至3.8微米。 9, the electrode structure as claimed in claim 1 transistor, wherein the second width is substantially 2 to 3.8 microns.
10、 一种晶体管的电极结构,包括: 第一电极,具有:至少两个第一区域,互相平行,且各该第一区域具有第一宽度;和至少一个第二区域,具有第二宽度,且连接所述第一区域,以便于界定出具有开口的空间;以及第二电极,具有本体和端部区域,该端部区域透过该开口,设置在部分该空间中;其中,该端部区域的宽度比该本体的宽度大,其中该第一宽度与该第二宽度的比值实质上为1.05至2。 10, the electrode structure of a transistor, comprising: a first electrode, comprising: at least two first regions, parallel to each other, and each of the first region having a first width; and at least one second region having a second width, and connecting the first region so as to define a space having an opening; and a second electrode having a body portion and an end region, the end region of the through opening, is provided in a portion of the space; wherein the end portion the width of the region is larger than the width of the body, wherein a ratio of the first width and the second width is substantially from 1.05 to 2.
11、 如权利要求10所述的晶体管的电极结构,其中该端部区域的宽度与该本体的宽度的比值实质上为1.03至2。 11, the electrode structure as claimed in claim 10, transistor, and wherein the ratio of the width of the body portion of the end region of a width substantially 1.03 to 2.
12、 如权利要求10所述的晶体管的电极结构,其中该本体的宽度实质上为4至6微米。 12, the electrode structure of the transistor according to claim 10, wherein the body is substantially the width of 4-6 microns.
13、 如权利要求10所述的晶体管的电极结构,其中该端部区域的宽度实质上为4.2至8微米。 13, the electrode structure of the transistor according to claim 10, wherein the width of the end regions is substantially 4.2 to 8 microns.
14、 如权利要求10所述的晶体管的电极结构,其中该第一宽度实质上大于该第二宽度。 14, the electrode structure of the transistor according to claim 10, wherein the first width is substantially greater than the second width.
15、 如权利要求10所述的晶体管的电极结构,其中该第一宽度实质上为4孩t米。 15, the electrode structure of the transistor according to claim 10, wherein the first width is substantially 4 m t children.
16、 如权利要求10所述的晶体管的电极结构,其中该第二宽度实质上为2至3.8微米。 16, the electrode structure of the transistor according to claim 10, wherein the second width is substantially 2 to 3.8 microns.
17、 如权利要求10所述的晶体管的电极结构,其中该端部区域的宽度与该本体的宽度实质上相差0.2至4微米。 17, the electrode structure of the transistor according to claim 10, wherein the width of the body portion end region differ substantially from 0.2 to 4 micrometers.
18、 如权利要求10所述的晶体管的电极结构,其中该端部区域的宽度实质上大于该第一宽度。 18, the electrode structure of the transistor according to claim 10, wherein the width of the end regions is substantially greater than the first width.
19、 如权利要求10所述的晶体管的电极结构,其中该端部区域的宽度与该第一宽度的比值实质上为1.05至2。 19, the electrode structure of the transistor according to claim 10, wherein the ratio of the width to the width of the first end region substantially from 1.05 to 2.
20、 如权利要求10所述的晶体管的电极结构,其中该端部区域的宽度与该第一宽度实质上相差0.2微米至4微米。 20, the electrode structure as claimed in claim 10, transistor, wherein a width of the first width of the end regions differ substantially 0.2 to 4 microns.
21、 如权利要求10所述的晶体管的电极结构,其中该第一电极还具有连接部,与所述第一区域的其中之一连接。 21, the electrode structure of the transistor according to claim 10, wherein the first electrode further has a connecting portion, one of said first region wherein the connection.
22、 如权利要求10所述的晶体管的电极结构,其中该第一电极还具有与该第二区域连接的连接部。 22, the electrode structure of the transistor according to claim 10, wherein the first electrode further has a connecting portion connected to the second region.
23、 一种像素结构,包括如权利要求1所述的晶体管的电极结构。 23, a pixel structure includes a transistor according to claim 1 as an electrode structure.
24、 如权利要求23所述的像素结构,其中该第一电极还具有与所述第一区域的其中之一连接的连接部。 24. The pixel structure as claimed in claim 23, wherein the first electrode connecting portion having a further one of said first region wherein the connection.
25、 如权利要求24所述的像素结构,还包括与该连接部连接的信号线。 25. The pixel structure as claimed in claim 24, further comprising a signal line connected to the connection portion.
26、 如权利要求23所述的像素结构,其中该第一电极还具有与该第二区域连接的连接部。 26. The pixel structure as claimed in claim 23, wherein the first electrode further has a connecting portion connected to the second region.
27、 如权利要求26所述的像素结构,还包括与该连接部连接的信号线。 27. The pixel structure as claimed in claim 26, further comprising a signal line connected to the connection portion.
28、 一种像素结构,包括如权利要求IO所述的晶体管的电极结构。 28, a pixel structure includes a transistor as claimed in claim IO said electrode structure.
29、 一种显示装置,包括如权利要求1所述的晶体管的电极结构。 29. A display apparatus comprising an electrode structure of a transistor according to claim 1.
30、 一种显示装置,包括如权利要求IO所述的晶体管的电极结构。 30. A display device comprising an electrode structure as claimed in claim IO said transistor.
CN 200610141673 2006-10-09 2006-10-09 Transistor electrode structure, and pixel structure and display device comprising same CN100483735C (en)

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