CN1929718A - Improved electrodes, inner layers, capacitors, electronic devices and methods of making thereof - Google Patents
Improved electrodes, inner layers, capacitors, electronic devices and methods of making thereof Download PDFInfo
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- CN1929718A CN1929718A CN 200610121261 CN200610121261A CN1929718A CN 1929718 A CN1929718 A CN 1929718A CN 200610121261 CN200610121261 CN 200610121261 CN 200610121261 A CN200610121261 A CN 200610121261A CN 1929718 A CN1929718 A CN 1929718A
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Abstract
A method of embedding thick-film fired-on-foil capacitors includes entirely covering the dielectric with an encapsulating electrode to avoid cracking in the dielectric due to shrinkage and temperature coefficient of expansion differences between the electrode and dielectric.
Description
Background
The application requires the priority of the U.S. Provisional Application No.60/692119 of 20 submissions June in 2005.
Technical field
The present technique field is the capacitor of imbedding in the printed substrate (PWB).More specifically, the present technique field comprises by the capacitor of imbedding in the printed substrate of thick film dielectrics and electrode manufacturing.
Technical background of the present invention
The capacitor of implementing the flush type high capacitance density in printed substrate can reduce circuit size and improve circuit performance.Typically, capacitor is imbedded in the panel stacked and that connect by interconnection circuit; Stacked panel forms multilayer printed circuit board.Usually stacked panel is called by " internal layer panel ".
The passive electric circuit element of imbedding in the printed substrate that forms by sintering on the paper tinsel (fired-on-foil) technology is known.By deposit and drying at least one deck thick-film dielectric layer on metal foil substrate, subsequently by deposit and dry thick-film electrode material to the thick-film capacitor dielectric layer, and subsequently under copper thick film firing condition the sintering capacitor arrangement form " sintering (separately fired-on-foil) on the paper tinsel discretely " capacitor.(proxy number EL-0495 (co-sintering of subregion) (cofired divisional) discloses this technology for the U.S. Patent Application Publication No.U.S.2004/0099999 A1 of Borland and U.S.2004/023361 A1.
Behind the sintering, the goods that form are laminated to the preimpregnation dielectric layer, but and the etching metal paper tinsel comprise the internal layer panel of thick-film capacitor with formation with the circuit that forms electrode for capacitors and any association.The internal layer panel of then the inner layer surface flaggy being folded and is interconnected to other is to form multilayer printed circuit board.
Thick-film dielectric should have high-k (K) behind the sintering.By being mixed with glass dust and mixture is distributed to thick film silk screen printing carrier, high-k powder (" function phase (functional phase) ") forms the high K thick-film dielectric adhesive paste that is suitable for silk screen printing.According to its composition, glass can be glassy state or crystalline state.
During the thick-film dielectric sintering, before reaching the highest sintering temperature, the glass ingredient of dielectric material is softening and mobile.During remaining on the maximum temperature that forms the capacitor arrangement of sintering on the paper tinsel, its coalescent and sealing function phase.Glass crystallization subsequently is to be precipitated as the phase of any needs.
Copper is the preferred material that forms electrode.By being mixed and mixture is distributed to thick film silk screen printing carrier with a small amount of glass dust, copper powder forms the thick film copper electrode adhesive paste that is fit to silk screen printing.But the big temperature expansion coefficient (TCE) between thick film copper and the thick-film capacitor dielectric medium is poor, and the difference in shrinkage during sintering usually causes the tensile stress in the dielectric in the outside around the electrode.Tensile stress can cause electrode dielectric rupture on every side shown in Figure 1A and Figure 1B.Under extreme case, break to extend downward Copper Foil always.Because this breaking can influence the long-term reliability of capacitor, therefore this breaking is undesirable.It is favourable that minimizing causes the instead of capacitor structural design of this situation of breaking.
The inventor provides and has formed on electrode and internal layer, the flush type thick film paper tinsel sintering capacitor and be formed on the new method of avoiding this printed substrate that breaks in the dielectric.In addition, the inventor has developed electrode, internal layer, capacitor and the printed circuit board (PCB) that is formed by these methods.
Summary of the invention
First execution mode of the present invention is a method of imbedding capacitor at formation, comprising: metal forming is provided; On metal forming, form dielectric layer; On whole described dielectric layer and to small part, form first electrode on the described metal forming; And the described capacitor of imbedding of sintering; The etching metal paper tinsel is to form second electrode.
Second embodiment of the invention is at the method for making device, comprising: metal forming is provided; On metal forming, form dielectric, thus, form the component side and the paper tinsel side of described metal forming; Forming first electrode on the whole dielectric and on the part metals paper tinsel; The component side of metal forming is laminated at least one preimpregnation material; The etching metal paper tinsel is to form second electrode, and wherein first enclosed electrode, dielectric and second electrode form capacitor.
The present invention is further at using above-mentioned various devices and the capacitor that forms with the method for describing in detail below that emphasize of the present invention.In addition, the present invention is directed to and comprise the present invention's device with capacitor that describe in detail below that describe in detail above.
Accompanying drawing is described
Detailed description will be with reference to following accompanying drawing, wherein:
Figure 1A-1B is described on the paper tinsel of conventional prior art design the observed view that breaks in the sintering capacitor.
Fig. 2 A-2K describe to make to have the sequence of views of method that sintering on the paper tinsel is imbedded the printed substrate of capacitor, and sintering is imbedded capacitor and had whole dielectric the printing electrode of covering on this paper tinsel.
Fig. 3 A-3J describe to make to have the sequence of views of method that sintering on the paper tinsel is imbedded the printed substrate of capacitor, and sintering is imbedded capacitor and had the dielectric isolation layer around the dielectric and cover whole dielectric printing electrode on this paper tinsel.
Fig. 4 A-4L describe to make to have the sequence of views that sintering on the paper tinsel is imbedded the transform method (description among Fig. 3 A-3J relatively) of the printed substrate of capacitor, and sintering is imbedded capacitor and had the insulating barrier around the dielectric and cover whole dielectric printing electrode on this paper tinsel.
Fig. 5 A-5O describe to make to have the sequence of views of method of printed substrate that sintering on the paper tinsel is imbedded the capacitor of two dielectric layers, this capacitor has printing electrode of whole first and second dielectric layers of covering, and wherein separator also is used as the barrier layer to prevent that capacitor dielectric is by chemical etching.
Fig. 6 A-6K describe to make to have the sequence of views of transform method of printed substrate that sintering on the paper tinsel is imbedded the capacitor of two dielectric layers, and this capacitor has and covers printing electrode of whole first and second dielectric layers.
According to common practice, the various features of accompanying drawing needn't be mapped in proportion.The size of various features can enlarge or dwindle more clearly to describe embodiments of the present invention.
Embodiment
First execution mode is a kind of method of making the single dielectric layer capacitor arrangement of sintering on the paper tinsel, comprising: metal forming is provided; On metal forming, form capacitor dielectric; Forming first electrode on the whole dielectric and on the some or all of metal forming and sintering capacitor arrangement under copper thick film firing condition.
According to second execution mode, a kind of method of making the single dielectric layer capacitor arrangement of sintering on the paper tinsel comprises: metal forming is provided; On metal forming, form dielectric isolation layer; In the sealing that produces by dielectric isolation layer, forming capacitor dielectric on the metal forming; Forming first electrode on the whole dielectric and on the some or all of dielectric isolation layer, and under copper thick film firing condition the sintering capacitor arrangement.
According to the 3rd execution mode, the distortion of second execution mode, a kind of method of making the single dielectric layer capacitor arrangement of sintering on the paper tinsel comprises: metal forming is provided; On metal forming, form dielectric isolation layer; In the sealing that produces by dielectric isolation layer, forming capacitor dielectric on the metal forming; Forming first electrode on the whole dielectric and on the some or all of dielectric isolation layer and on the part metals paper tinsel, and under copper thick film firing condition the sintering capacitor arrangement.
According to the 4th execution mode, a kind of method of making the capacitor arrangement of two dielectric layers of sintering on the paper tinsel comprises: metal forming is provided; On metal forming, form dielectric isolation layer; In the sealing that produces by dielectric isolation layer, forming capacitor dielectric on the metal forming; Forming first electrode on the whole dielectric and on the some or all of dielectric isolation layer and on the part metals paper tinsel, and under copper thick film firing condition sintering first capacitor arrangement; On first electrode, form second capacitor dielectric; Form to cover second electrode of whole second capacitor dielectric and SI semi-insulation separator and part paper tinsel, and under copper thick film firing condition this structure of sintering.
According to the 5th execution mode, a kind of method of making the capacitor arrangement of two dielectric layers of sintering on the paper tinsel comprises: the goods that first execution mode is provided; On first electrode, form dielectric isolation layer so that it forms the closed area; Form second capacitor dielectric on first electrode in the closed area that limits by separator and on the part separator; Form to cover second electrode of whole second capacitor dielectric and SI semi-insulation separator, and under copper thick film firing condition this structure of sintering.
According to another execution mode, a kind ofly make the method that sintering on the paper tinsel is imbedded the capacitor internal layer, comprise: the component side of sintering capacitor arrangement on the paper tinsel is laminated to preimpregnation material and etching metal paper tinsel to form first and second electrodes in the first execution mode situation, perhaps first, second in the second execution mode situation and third electrode.
According to further execution mode; A kind of manufacturing includes but not limited to have the method for device that sintering on the paper tinsel is imbedded the multilayer printed circuit board of capacitor, and this method comprises that the interior-layer layer that sintering on the paper tinsel is imbedded capacitor is laminated to other preimpregnation material and forms and passes at least one path of preimpregnation material to connect at least one electrode.
According to above-mentioned execution mode, electrode covers whole dielectric and encapsulated dielectric.Enclosed electrode is provided with pressure to avoid tensile stress on dielectric all sizes.This can produce sintering capacitor on the paper tinsel that avoids breaking so that the capacitor that avoids breaking is embedded in the multilayer printed circuit board inboard.In addition, separator also can be used as the barrier layer to prevent that capacitor dielectric is by chemical etching in the above-described embodiment.Improved the reliability of capacitor thus.
When describing according to the formation of printed substrate when of the present invention, those skilled in the art can understand that embodiments of the present invention encapsulate on comprising plug-in unit (interposer), printed substrate, multi-chip module, area array package (areaarray package), system and system in all be useful in the various devices that encapsulate.
The present invention further at a kind of method of making device, comprising: the metal forming with component side and paper tinsel side is provided; On metal forming, form dielectric isolation layer; Form dielectric on metal forming, wherein dielectric is insulated separator around also contact with it; On the whole dielectric,, form enclosed electrode thus forming first electrode on the SI semi-insulation separator and on the part metals paper tinsel; The component side of metal forming is laminated at least a preimpregnation material; The etching metal paper tinsel is to form second electrode, and wherein first enclosed electrode, dielectric and second electrode form capacitor.
Further execution mode of the present invention is at a kind of device, comprise: imbed at least one capacitor in one deck dielectric material at least, this capacitor comprises: metal forming, at least one deck dielectric material, and first electrode, wherein said first electrode forms by covering whole ground floor dielectric material and printing electrode of part metals paper tinsel; The second layer dielectric material adjacent with first electrode; And form and second electrode adjacent with second layer dielectric material with described ground floor dielectric material by metal forming.
In further execution mode, the present invention is directed to a kind of device, comprise: imbed at least one capacitor in one deck dielectric material at least, this capacitor comprises: metal forming, at least one deck dielectric material, dielectric isolation layer and first electrode, wherein said first electrode forms by covering the described dielectric material of whole ground floor, SI semi-insulation separator and printing electrode of part metals paper tinsel; The second layer dielectric material adjacent with dielectric isolation layer with first electrode; And form and second electrode adjacent with second layer dielectric material with described ground floor dielectric material by described metal forming.
After the detailed description of execution mode, those skilled in the art can understand advantage and other advantage and the benefit of various other execution modes of the present invention of stating above below reading.
Fig. 2 A-2K describes the first method that is manufactured on the multilayer printed circuit board of imbedding capacitor 2000 (Fig. 2 K) that has sintering capacitor on the paper tinsel on the metallic foil pattern, wherein prints electrode to cover whole dielectric and part metals paper tinsel.For describing purpose, describe two of formation as Fig. 2 A-2K and imbed capacitor.But, can on paper tinsel, form one, two, three or more capacitors by the method for in this specification, describing.Emphasize to have only the formation of a described capacitor for simplifying the description of writing down below.Fig. 2 A-2D and 2F-2I and 2K are the sectional views on the front.Fig. 2 E is the top plane view of Fig. 2 D.Fig. 2 J is the ground plan of Fig. 2 I.
In Fig. 2 A, provide metal forming 210.Metal forming 210 can be obtain usually in industry a kind of.For example, metal forming 210 can be the copper of copper, copper-invar-copper, invar, nickel, nickel plating or has other material and alloy above the fusing point of thick film adhesive paste sintering temperature.The paper tinsel that is fit to comprises the paper tinsel that mainly comprises copper, is generally used for the Copper Foil of multilayer printed circuit board industry as the Copper Foil of the Copper Foil of reverse process (reverse treated), aftertreatment and other.For example, the thickness of metal forming 210 can be in the scope of about 1-100 micron.Other thickness range comprises the 3-75 micron, more specifically the 12-36 micron.The corresponding about 1/3oz of these thickness ranges is between the 1oz Copper Foil.
In some embodiments, sintering back up 212 comes preliminary treatment paper tinsel 210 to paper tinsel 210 by applying also.Back up 212 is shown as the face coat among Fig. 2 A, and can be the relatively thin layer that is applied to the component side surface of paper tinsel 210.Back up 212 adheres to metal forming 210 and the layer that is deposited on the back up 212 preferably.For example, form back up 212 by adhesive paste being applied on the paper tinsel 210 of the temperature sintering of the fusing point that is lower than paper tinsel 210.The back up adhesive paste can be printed as the whole lip-deep opening coating of paper tinsel 210, perhaps is printed on the selection area of paper tinsel 210.Usually more economical is at this back up adhesive paste of printing on the selection area of paper tinsel 210 rather than on whole paper tinsel 210.But, because the glass content (content) in the back up stops the oxide etch of Copper Foil 210, if but therefore use the doped sintered then whole surface of preferred coated paper tinsel 210 of oxygen in conjunction with Copper Foil 210.
A kind of thick film copper adhesive paste that is suitable as back up is (open among people's such as Borland the U. S. application No.10/801326; Proxy number EL-0545 incorporates into here with incorporated by reference) have a following component (mass percent):
Copper powder 58.4
Glass A 1.7
Cuprous oxide powder 5.8
Carrier 11.7
TEXANOL solvent 12.9
Surfactant 0.5
Amount to 91.0
In these components,
Glass A comprises: component Pb
5Ge
3O
11Lead germanium oxide
Carrier comprises: ethyl cellulose N200 11%
TEXANOL 89％
Surfactant comprises: VARIQUAT CC-9NS surfactant
TEXANOL obtains from Eastman chemical company.VARIQUAT CC-9NS obtains from Ashland company.
Barium titanate powder 68.55
Lithium fluoride 1.0
Barium fluoride 1.36
Zinc fluoride 0.74
Glass A 10.25
Glass B 1.0
Glass C 1.0
Carrier 5.9
TEXANOL solvent 8.7
Oxidant 1.0
Phosphate wetting agent 0.5
Amount to 100.00
In these components,
Glass A comprises: component Pb
5Ge
3O
11Lead germanium oxide
Glass B comprises: Pb
4BaGe
1.5Si
1.5O
11
Glass C comprises: Pb
5GeSiTiO
11
Carrier comprises: ethyl cellulose N200 11%
TEXANOL solvent 89%
Oxidant comprises: barium nitrate powder 84%
Carrier 16%
In Fig. 2 C, on whole second layer of capacitor dielectric 225 and near the part metals paper tinsel the capacitor dielectric periphery, form conductive material layer 230 forming first electrode, and dry.For example, form conductive material layer 230 by silk screen printing thick film metal adhesive paste on second layer of capacitor dielectric 225.The adhesive paste that is used to form back up 212 also is applicable to and forms conductive material layer 230.
Co-sintering first layer of capacitor dielectric 220, second layer of capacitor dielectric 225 and form the first conductive material of electrodes layer 230 then, the structure that forms with sintering together.In the front view of Fig. 2 D, shown the structure division behind the sintering.Owing to effectively removed border between the capacitor dielectric 220 and 225 in co-sintering, so sintering can cause the single capacitor dielectric 228 that formed by capacitor dielectric 220 and 225.The top electrode 232 of sealed capacitor dielectric layer 228 is also formed by the co-sintering step.When from the end face fluoroscopic observation shown in Fig. 2 E, the surface area of capacitor dielectric 228 is less than the surface area of conductive material layer 232.When on the Copper Foil under about 900 ℃ maximum temperature in nitrogen sintering in the time of 10 minutes, the capacitor dielectric 228 of formation has about 3000 dielectric constant and approximate 2.5% dissipation factor.Other sintering condition can be used for obtaining the individual material properties of capacitor dielectric 228.
In Fig. 2 F,, in covering, first electrode 232 faces the capacitor dielectric 228 of preimpregnation material with preimpregnation material 240 stacked paper tinsels with first electrode 232.For example, in standard printed substrate technology, use the FR4 preimpregnation to carry out stacked.In one embodiment, can use 106 epoxy preimpregnation.For example, the stacked condition of Shi Heing is about 1 hour 185 ℃ of 208psig in the vacuum chamber that is extracted into 28 inches of mercury.The opposition side that paper tinsel 250 is applied to laminated material 240 is to be provided for producing the surface of circuit.Silicone rubber press pad discharges thin slice with the glass that smooth PTFE fills and contacts with 250 with paper tinsel 210, in case stop ring epoxy resins and laminated plate are bonded together.Laminated material 240 can be the dielectric material of any kind, for example, standard epoxy, high Tg epoxy resin, polyimides, polytetrafluoroethylene, cyanate ester resin, potting resin are (filled resin system), BT epoxy resin and other resin and the lamination that insulation is provided between circuit layer.
With reference to figure 2G, after stacked, photoresist is applied to paper tinsel 210 and paper tinsel 250.Image conversion and development photoresist are to form photoresist figure 260 and 262.
With reference to figure 2H, etched foil 210 and 250, and use, for example, standard printed substrate process conditions are peeled off photoresist 260 and 262, to form the goods shown in Fig. 2 I.The second condenser foil electrode 218 that etching forms the groove 215 in the paper tinsel 210 and causes isolating with the remainder and first electrode 232 of paper tinsel.The second condenser foil electrode 218, dielectric 228 and first electrode 232 form capacitor 200.The copper packing 217 and 219 that etch process is also produced with the weld pad (pad) of the path that connects electrode for capacitors 232 by paper tinsel 210.Circuit 252,254,256 is also formed by paper tinsel 250.
Fig. 2 J is the ground plan of goods shown in Fig. 2 I.In Fig. 2 J, show two capacitors 200 that form by etched trench 215 in paper tinsel 210.This numeral is exemplary, still, and according to the capacitor that can form any number at the execution mode of this discussion by paper tinsel.Fig. 2 J describes two capacitors 200 of analog structure, and still, present embodiment allows to form the capacitor of different size and/or shape.
With reference to figure 2K, with other lamination and Copper Foil to being laminated to the goods shown in Fig. 2 I and holing and electroplate little path 2010 and 2020.Add photoresist to outer copper layer and image conversion and development.Use standard printed wiring condition then, etching outer copper foil and peel off remaining photoresist is to finish printed substrate 2000.
The preparation technology who describes be applicable to outer adjacent layer of printed circuit board (PCB) 2000 in have four metal level printed substrates 2000 shown in Fig. 2 K that imbeds capacitor 200.But, can change preparation order and printed substrate and can have any number of plies.Also can be with the random layer that capacitor is arranged on multilayer board of imbedding according to present embodiment.The replacement that also can be used as little path 2020 is electroplated in the machine drilling of through-out pathway, with connecting circuit and condenser foil electrode 232.
Fig. 3 A-3J describes to make has the second method of the multilayer printed circuit board 3000 (Fig. 3 J) of imbedding capacitor, this is imbedded capacitor and has sintering capacitor on the paper tinsel on the metallic foil pattern, wherein prints electrode to cover whole dielectric and SI semi-insulation separator.For the purpose of illustration, as Fig. 3 A-3J two formation of imbedding capacitor have been described.But the method for describing by this specification can form one, two, three or more a plurality of capacitor on paper tinsel.In order to simplify, following description is at the only formation of a described capacitor.Fig. 3 A and 3C-3J are the profiles of facing.Fig. 3 B is the top plane view of Fig. 3 A.
In Fig. 3 A, provide metal forming 310.Metal forming 310 can be the type of describing usually in first execution mode, and similarly sintering back up 312 carries out preliminary treatment to paper tinsel 310 by applying also with the description of first execution mode.
In Fig. 3 D, form and dry conductive material layer 330 on whole second dielectric materials layer 325 and on the SI semi-insulation separator 313.For example, form conductive material layer 330 by the silk screen printing thick film metal adhesive paste of describing in the first embodiment on second dielectric materials layer 325.
Co-sintering dielectric isolation layer 313, first layer of capacitor dielectric 320, second layer of capacitor dielectric 325 and form the first conductive material of electrodes layer 330 then, the structure that forms with sintering together.Fig. 3 E represents the front view of the structure division behind the sintering.Owing to effectively removed the border between the capacitor dielectric 320 and 325 in the co-sintering, so sintering can cause the single capacitor dielectric 328 that formed by capacitor dielectric 320 and 325.The dielectric isolation layer 314 that is connected to single capacitor dielectric 328 is formed by sintering.The top electrode 332 of sealed capacitor dielectric layer 328 is also formed by sintering step.The surface area of capacitor dielectric 328 is less than the surface area of conductive material layer 332.When on the Copper Foil under about 900 ℃ maximum temperature in nitrogen sintering in the time of 10 minutes, the capacitor dielectric 328 of formation can have about 3000 dielectric constant and approximate 2.5% dissipation factor.Other sintering condition can be used for obtaining the individual material properties of capacitor dielectric 328.
In Fig. 3 F,, in covering, first electrode 332 faces the capacitor dielectric 328 of preimpregnation material with preimpregnation material 340 stacked paper tinsels with first electrode 332.Material and the technology described in available first execution mode are carried out stacked.The opposition side that paper tinsel 350 is applied to laminated material 340 is to be provided for producing the surface of circuit.
With reference to figure 3G, after stacked, photoresist is applied to paper tinsel 310 and paper tinsel 350.The image conversion and the photoresist that develops are to form photoresist figure 360.In this preparation section this stage needn't image conversion and development paper tinsel 350 on photoresist 362, composition Copper Foil 350 in last outer layer process usually.
With reference to figure 3I, other lamination 345 and Copper Foil 370 can be laminated to the goods shown in Fig. 3 H.With reference to figure 3J, hole and electroplate little path 3010 and punch path 3020.Add photoresist to outer copper layer 350 and 370 also image conversion and developments.Then and use standard printed wiring condition, the etching outer copper foil is to produce circuit 385 and to peel off remaining photoresist, to finish the printed substrate 3000 shown in Fig. 3 J.
The preparation technology who describes is suitable for having the printed substrate 3000 of the three-layer metal layer of imbedding capacitor 300 in the intermediate layer of printed circuit board (PCB) 3000.But, can change preparation order and printed substrate 3000 and can have any number of plies.Also can be with the random layer that capacitor is arranged on multilayer board of imbedding according to present embodiment.
Fig. 4 A-4L describes and makes a kind of optional method with multilayer printed circuit board 4000 (Fig. 4 L) of imbedding capacitor, imbed capacitor and have sintering capacitor on the paper tinsel on the metallic foil pattern, wherein printing electrode covers whole dielectric, SI semi-insulation separator and part metals paper tinsel, and separator also is used as the barrier layer so that prevent the capacitor dielectric chemical etching in imbedding capacitor.For describing purpose, as having described two formation of imbedding capacitor among Fig. 4 A-4L.But, on paper tinsel, can form one, two, three or more a plurality of capacitor by the method for describing in this specification, for simplifying, following description is at only forming a described capacitor.Fig. 4 A and 4C-4E and 4G-4I and 4K-4L are the profiles of facing.Fig. 4 B is the top plane view of Fig. 4 A.Fig. 4 F is the ground plan of Fig. 4 E, and Fig. 4 J is the ground plan of Fig. 4 I.
In Fig. 4 A, provide metal forming 410.Metal forming 410 can be for the type usually described in first execution mode and is also described similar by applying and sintering back up 412 carries out preliminary treatment to paper tinsel 410 to first execution mode.
In Fig. 4 D, form electric conducting material 430 and dry on whole second dielectric materials layer 425, on the SI semi-insulation separator 413 and on the part metals paper tinsel 410.For example, the silk screen printing thick film metal adhesive paste of describing in by first execution mode on second dielectric materials layer 425 forms conductive material layer 430.
Co-sintering dielectric isolation layer 413, first layer of capacitor dielectric 420, second layer of capacitor dielectric 425 and form the first conductive material of electrodes layer 430 then, the structure that forms with sintering together.Fig. 4 E represents the front view of the structure division behind the sintering.Owing to effectively removed the border between the capacitor dielectric 420 and 425 in the co-sintering, so sintering can cause the single capacitor dielectric 428 that formed by capacitor dielectric 420 and 425.Dielectric isolation layer 414 is formed by separator 413 and connects single capacitor dielectric 428.The top electrode 432 of sealed capacitor dielectric layer 428 is also formed by the co-sintering step.The top plane view of Fig. 4 F displayed map 4E goods.The surface area of capacitor dielectric 428 is less than the surface area of conductive material layer 432.When on the Copper Foil under about 900 ℃ maximum temperature in nitrogen sintering in the time of 10 minutes, the capacitor dielectric 428 of formation can have about 3000 dielectric constant and approximate 2.5% dissipation factor.Other sintering condition can be used for obtaining the individual material properties of capacitor dielectric 428.
In Fig. 4 G,, in covering, first electrode 432 faces the capacitor dielectric 428 of preimpregnation material with preimpregnation material 440 stacked paper tinsels with first electrode 432.Material and the technology described in available first execution mode are carried out stacked.The opposition side that paper tinsel 450 is applied to laminated material 440 is to be provided for producing the surface of circuit.
With reference to figure 4H, after stacked, photoresist is applied to paper tinsel 410 and paper tinsel 450.The image conversion and the photoresist that develops are to form photoresist figure 460.In this preparation section this stage needn't image conversion and development paper tinsel 450 on photoresist 462, composition Copper Foil 450 in last outer layer process usually.
With reference to figure 4K, other lamination 445 and Copper Foil 470 are laminated to the goods shown in Fig. 4 I.With reference to figure 4L, boring is also electroplated punch path 4010 and 4020.Add photoresist to outer copper layer 450 and 470 also image conversion and developments.Use standard printed wiring condition then, the etching outer copper foil is to produce circuit 485 and to peel off remaining photoresist, to finish printed substrate 4000.
The preparation technology who describes is suitable for having the printed substrate of the three-layer metal layer of imbedding capacitor 400 in the intermediate layer of printed circuit board (PCB) 4000.But, can change preparation order and printed substrate 4000 and can have any number of plies.Also can be with the random layer that capacitor is arranged on multilayer board of imbedding according to present embodiment.
Fig. 5 A-5O describes to make has a kind of method of the multilayer printed circuit board 5000 (Fig. 5 O) of imbedding capacitor, imbed the capacitor that capacitor has two dielectric layers of sintering on the paper tinsel on the metallic foil pattern, wherein print first electrode and cover whole first dielectric layer, part isolated insulation layer and part metals paper tinsel, and second print electrode cover whole second dielectric layer by layer, SI semi-insulation separator and part metals paper tinsel.For describing purpose, two formation of imbedding capacitor have been described among Fig. 5 A-6O.But, on paper tinsel, can form one, two, three or more a plurality of capacitor by the method for describing in this specification.For simplifying, following description is at the only formation of a described capacitor.Fig. 5 A, 5C-5D, 5F-5L and 5N-5O are the profiles of facing.Fig. 5 B is the top plane view of Fig. 5 A, and Fig. 5 E is the top plane view of Fig. 5 D, and Fig. 5 M is the ground plan of Fig. 5 L.
In Fig. 5 A, provide metal forming 510.Metal forming 510 can be the type described usually in first execution mode, and also to can first execution mode describe similar by applying and sintering back up 512 carries out preliminary treatment to paper tinsel 510.
In Fig. 5 D, on whole second dielectric materials layer 525, forming electric conducting material 530 and dry on the SI semi-insulation separator 513 and on the part metals paper tinsel 510 and on another part of dielectric isolation layer 513.For example, on second dielectric materials layer 425, form conductive material layer 530 by the silk screen printing thick film metal adhesive paste of describing in the first embodiment.Fig. 5 E represents to form the top plane view of goods.
Co-sintering dielectric isolation layer 513, first layer of capacitor dielectric 520, second layer of capacitor dielectric 525 and form the first conductive material of electrodes layer 530 then, the structure that forms with sintering together.Fig. 5 F represents the front view of the structure division behind the sintering.Owing to effectively removed the border between the capacitor dielectric 520 and 525 in the co-sintering, so sintering can cause the single capacitor dielectric 528 that formed by capacitor dielectric 520 and 525.Dielectric isolation layer 514 forms and is connected to single capacitor dielectric 528 by separator 513.The top electrode 532 of sealed capacitor dielectric layer 528 is also formed by the co-sintering step.The surface area of capacitor dielectric 528 is less than the surface area of conductive material layer 532.When on the Copper Foil under about 900 ℃ maximum temperature in nitrogen sintering in the time of 10 minutes, the capacitor dielectric 528 of formation can have about 3000 dielectric constant and approximate 2.5% dissipation factor.Other sintering condition can be used for obtaining the individual material properties of capacitor dielectric 528.
With reference to figure 5G, the deposit capacitors dielectrics is to form capacitor dielectric 534 on first electrode 532.Deposit second capacitor dielectric 535 and dry on first capacitor dielectric 534.In another embodiment, the single-layer capacitor dielectric can be deposited to and two layers 534 and 535 identical thickness.On whole capacitor device dielectric layer 535, form conductive layer 536.Shown in Fig. 5 H front view, conductive layer 536 is extending on the capacitor dielectric 535 and on the SI semi-insulation separator 514 and on the paper tinsel 510.
The structure that co-sintering capacitor dielectric 534, second capacitor dielectric 535, conductive layer 536 form with sintering together under copper thick film firing condition then.Fig. 5 I represents the front view of the structure division behind the sintering.Owing to effectively removed the border between the capacitor dielectric 534 and 535 in the co-sintering, so sintering can cause the single capacitor dielectric 538 that formed by capacitor dielectric 534 and 535.Sintering also forms the top electrode 532 of sealed capacitor dielectric layer 538.When on the Copper Foil under about 900 ℃ maximum temperature in nitrogen sintering in the time of 10 minutes, the capacitor dielectric 538 of formation can have about 3000 dielectric constant and approximate 2.5% loss factor.Other sintering condition can be used for obtaining the individual material properties of capacitor dielectric 538.
In Fig. 5 J, with have cover in the face of the preimpregnation material 540 stacked paper tinsels 510 of second electrode 539 of the dielectric 538 of preimpregnation material.For example, use material and the technology described in first execution mode to carry out stacked.The opposition side that paper tinsel 550 is applied to laminated material 540 is to provide the surface that produces circuit.
After stacked, photoresist is applied to paper tinsel 510 and 550.Image conversion and development photoresist are to form the photoresist 560 of composition shown in Fig. 5 K.In this preparation section at this stage not photoresist 562 on image conversion and the development paper tinsel 550, composition Copper Foil 550 in last outer layer process usually.
With reference to figure 5N, other lamination 545 and Copper Foil 570 are laminated to the goods shown in Fig. 5 L.Hole then and electroplating ventilating hole path 5010 and 5020.Then photoresist is applied to outer copper foil 510 and 570.The image conversion and the photoresist that develops, etching Copper Foil and peel off remaining photoresist to finish the external circuit that is formed in the goods shown in Fig. 5 O.Plate can be accepted extra processing, decolours coated with finishing circuit board 5000 as anti-.
The preparation technology who describes is adapted at having the three-layer metal layer printed substrate of imbedding capacitor 500 in the intermediate layer of printed substrate 5000.But, can change preparation order and printed substrate 5000 and can have any number of plies.Will be according to the random layer that capacitor is arranged on multilayer printed circuit board of imbedding of present embodiment.
Fig. 6 A-6K describes and makes the another kind of optional method with multilayer printed circuit board 6000 (Fig. 4 K) of imbedding capacitor, imbed two dielectric layer capacitors that capacitor has sintering on the paper tinsel on the metallic foil pattern, wherein Yin Shua first electrode covers whole first dielectric layer and part metals paper tinsel, and second prints electrode and cover whole second dielectric layer and SI semi-insulation barrier layer.For the purpose of illustration, as Fig. 6 A-6K two formation of imbedding capacitor have been described.But, on paper tinsel, can form one, two, three or more a plurality of capacitor by the method for describing in this specification.For simplifying, the only formation of a described capacitor is emphasized in following description.Fig. 6 A-6B, 6D-6H and 6J and 6K are the profiles of facing.Fig. 6 C is that top plane view and Fig. 6 I of Fig. 6 B is the ground plan of Fig. 6 H.
In Fig. 6 A, provide the goods of representing usually as among Fig. 2 D.Be deposited on the electrode 632 that covers whole capacitor device dielectric 628 dielectric isolation layer 633 and drying.Fig. 6 C represents to form the top plane view of goods.Dielectric isolation layer 633 forms sealing on enclosed electrode 632.The dielectric isolation layer that is fit to can be the glass ingredient of the insulation filling that can not break during with the copper co-sintering under copper thick film firing condition.In Fig. 6 D, in the sealing that the capacitors dielectrics of describing in first execution mode is deposited on first electrode 632 and forms by dielectric isolation layer 633, to form capacitor dielectric 634.Be deposited on first capacitor dielectric 634 second capacitor dielectric 635 and drying.In optional execution mode, but the deposit of single-layer capacitor dielectric is and two layers 634 and 635 thickness that equate.Use the electric conducting material of describing in first execution mode on whole capacitor device dielectric layer 635, to form conductive layer 636.Conductive layer 636 is extending on the capacitor dielectric 635 and on the SI semi-insulation separator 633.
Co-sintering dielectric isolation layer 633, capacitor dielectric 634, second capacitor dielectric 635 and conductive layer 636 under copper thick film firing condition then, the structure that forms with sintering together.Fig. 6 E represents the front view of the structure division behind the sintering.Owing to effectively removed the border between the capacitor dielectric 634 and 635 in the co-sintering, so sintering can cause the single capacitor dielectric 638 that formed by capacitor dielectric 634 and 635.Sintering also causes the dielectric isolation layer 637 that can not break in sintering process.The top electrode 639 of sealed capacitor dielectric layer 638 also forms in the co-sintering step.When on the Copper Foil under about 900 ℃ maximum temperature in nitrogen sintering in the time of 10 minutes, the capacitor dielectric 638 of formation can have about 3000 dielectric constant and approximate 2.5% dissipation factor.Other sintering condition can be used for obtaining the individual material properties of capacitor dielectric 638.
In Fig. 6 F, with have cover in the face of the preimpregnation material 640 stacked paper tinsels 610 of second electrode of the dielectric 638 of preimpregnation material.For example, use material and the technology described in first execution mode to carry out stacked.The opposition side that paper tinsel 650 is applied to laminated material 640 is to provide the surface that produces circuit.
After stacked, photoresist is applied to paper tinsel 610 and 650.Image conversion and development photoresist are to form the photoresist 660 of composition shown in Fig. 6 G.In this preparation section at this stage not photoresist 662 on composition and the development paper tinsel 650, composition Copper Foil 650 in last outer layer process usually.
Fig. 6 I is the ground plan of goods shown in Fig. 6 H.In Fig. 6 I, two capacitor arrangements 600 are shown as etched trench 615 formation in paper tinsel 610.But this number is exemplary, and can form the capacitor of any number according to the execution mode of this paper discussion.Fig. 6 I has described two capacitors 600 of analog structure, and still, present embodiment allows to form the capacitor of different size and/or shape.
With reference to figure 6J, other lamination 645 and Copper Foil 670 are laminated to the goods shown in Fig. 6 H.Hole then and electroplate punch path 6010 and little path 6020.Then photoresist is applied to outer copper foil 610 and 670.The image conversion and the photoresist that develops, etching Copper Foil and peel off remaining photoresist to finish the external circuit in the goods shown in Fig. 6 K.Plate can be accepted extra processing, decolours coated with forming circuit board 6000 as anti-.
The preparation technology who describes is fit to have has the three-layer metal layer printed substrate of imbedding capacitor 600 in the intermediate layer of printed substrate 6000.But, can change preparation section and printed substrate 6000 can have any number of plies.Will be according to the random layer that capacitor is arranged on multilayered printed circuit of imbedding of present embodiment.
In the above-described embodiment, the thick film adhesive paste can comprise the trickle separating particles of pottery, glass, metal or other solid.Described particle has 1 micron or littler size, and is dispersed in and comprises that described condensate is dissolved in the mixture of dispersant and organic solvent in polymeric " organic carrier ".
Thick-film dielectric can have high-k (K) behind the sintering.For example, form high K thick film dielectrics in the thick film silk screen printing carrier by high-k powder (" function phase ") being mixed with alloy and glass dust and mixture being distributed to.During sintering, before reaching the highest sintering temperature, softening and mobile, the coalescent and sealing of the glass ingredient of capacitor material forms the function phase of sintering capacitor composition.
High K function comprises general formula ABO mutually
3Perovskite, as crystallization brium carbonate (BT), lead zirconate titanate (PZT), lanthanumdoped lead zirconate-lead titanate (PLZT), niobic acid magnesium lead (PMN) and barium strontium titanate (BST).Because brium carbonate is not used for the influence of the reducing condition of sintering process relatively, so brium carbonate is used for, and the application of sintering is favourable on the Copper Foil.
Typically, with respect to high K function phase, the thick film glass composition of dielectric material is an inertia, and is used for together tight bond composite material (composite) substantially and with capacitor composite material and substrate bonding.Preferably only use a small amount of glass so that the dielectric constant of high K function phase is not undue dilution.For example, glass can be calcium-aluminium-borosilicate, lead-barium-borosilicate, magnesium-aluminium-silicate, boric acid rare earth slaine (rare earthborate) or other analogous components.Because dilution effect is significantly little and the high-k of maintenance composite material, the therefore preferred glass that uses with relative high dielectric constant.Compound Pb
5Ge
3O
11Lead germanium oxide glass be ferroelectric glass, it has approximate 150 dielectric constant and therefore is fit to.The variant of lead germanium oxide also is fit to.For example, available barium partly substitutes plumbous, and partly substitutes germanium with silicon, zirconium and/or titanium.
The adhesive paste that is used to form electrode layer can be based on the metal powder of copper, nickel, silver, silver-palladium composition, or the mixing of these compounds.Preferably copper efflorescence compound.
Chemistry and physical characteristic by metal substrate melt temperature, electrode melt temperature and dielectric composition limit the sintering temperature that needs.For example, the one group of sintering condition that is suitable in the above-mentioned execution mode is the nitrogen sintering process that has 10 minute residence time in about 900 ℃ maximum temperature.
The present invention is detailed description and described the present invention the preceding.In addition, the preferred implementation that open just the present invention who shows and describe selectes, but can understand the present invention can use various other in conjunction with, distortion and environment and can in the technology of the same case of the scope of the notion of the present invention of this statement, above-mentioned instruction and/or association area and knowledge, change and distortion.
The execution mode of describing on this is further explained known practice best mode of the present invention, and can make those skilled in the art use the present invention according to the needs of application in practice with this or other execution mode and various distortion.Therefore, the form of the present invention disclosed herein that is not limited to is described.And, refer to the appended claim of structure comprising optional execution mode, and indeterminate being limited in the detailed description.
Example
Prepared and had PWB (printed substrate) substrate of imbedding capacitor, wherein imbedded the screen printing electrode that capacitor has complete encapsulated dielectric.The 4-layer is designed for the PWB structure that ceramic capacitor is trapped in layer 2 (L2).At first, make the internal layer that comprises L2/L3, stacked with layer 1 and 4 then to finish the PWB lamination.The Copper Foil of loz.NT-TOI is used for L2.The TOI paper tinsel is that one-sided no zinc is handled anodized foil, and is designed to provide on the wide region of organic substrate strong cohesive force.As a result, the internal layer with capacitor does not need to carry out oxidation processes, to guarantee the enough adhesions to the 1080 FR4 preimpregnation that are used to build plate.All used the low of 125psi to laminate at internal layer and last lamination, to avoid causing any mechanical damage to ceramic capacitor.Capacitor height is approximately 35 μ m, and comprises the screen printing electrode of complete encapsulated dielectric of 10 μ m and the ceramic dielectric of 20 μ m.Two groups of FR4 in the plate of finishing in every layer are～150 μ m.
Finish outside onboard is ENIG (electrodeless Ni/Au).With all copper of highly basic etchant etching.Little path is used for and will imbeds the copper pad that capacitor is connected to substrate surface.
Prepared and amounted to 39 PWB panels of finishing.Each panel all has six styles, and described style has the capacitor that contains the design of being discussed in this patent.Each style has 18 capacitors.
Claims (17)
1. the method for capacitor is imbedded in a formation, comprising:
Metal forming is provided;
On described metal forming, form dielectric layer;
On whole described dielectric layer and to small part, form first electrode on the described metal forming; And
The described capacitor of imbedding of sintering;
The described metal forming of etching is to form second electrode.
2. described method as claimed in claim 1 is characterized in that, described method also is included on the described metal forming and forms before the described dielectric layer, forms dielectric isolation layer on described metal forming.
3. described method as claimed in claim 1 is characterised in that described method also is included on the described dielectric layer and forms dielectric isolation layer.
4. as claim 2 or 3 each described methods, be characterised in that described method also comprises:
On described first electrode, form second capacitor dielectric;
Whole described second capacitor dielectric and to small part described dielectric isolation layer and form next electrode on the described metal forming to small part, form two dielectric layer structures thus; And the described structure of sintering.
5. method as claimed in claim 4 is characterised in that described method also comprises;
On described first electrode, form second dielectric isolation layer.
6. capacitor, it is formed by each described method of claim 1 to 5.
7. device, it comprises the capacitor of claim 6.
8. method of making device comprises:
Metal forming is provided;
On described metal forming, form dielectric, therefore, form the component side and the paper tinsel side of described metal forming;
Forming first electrode on the whole dielectric and on the part metals paper tinsel;
The component side of metal forming is laminated at least a preimpregnation material;
The etching metal paper tinsel is to form second electrode, and wherein first enclosed electrode, dielectric and second electrode form capacitor.
9. method as claimed in claim 8 is characterized in that, described method comprises:
In one or more preimpregnation materials that connect capacitor, form one or more paths.
10. device comprises:
At least one is embedded in the capacitor in one deck dielectric material at least, and this capacitor comprises:
Metal forming, one deck dielectric material and first electrode at least, wherein said first electrode forms by covering whole ground floor dielectric material and printing electrode of part metals paper tinsel;
The second layer dielectric material adjacent with first electrode; And
Form and second electrode adjacent with second layer dielectric material by metal forming with described ground floor dielectric material.
11. a method of making device comprises:
Metal forming with component side and paper tinsel side is provided;
On metal forming, form dielectric isolation layer;
On metal forming, form dielectric, wherein dielectric layer be insulated separator around and contact with dielectric isolation layer;
On the whole dielectric,, form enclosed electrode thus forming first electrode on the SI semi-insulation separator and on the part metals paper tinsel;
The component side of metal forming is laminated at least a preimpregnation material;
The etching metal paper tinsel is to form second electrode, and wherein first enclosed electrode, dielectric and second electrode form capacitor.
12. method as claimed in claim 11 is characterized in that, described insulating barrier also is used as the barrier layer to prevent etch chemistries contacting capacitor dielectric.
13. method as claimed in claim 11 is characterized in that, device layer is laminated at least a other preimpregnation material behind the etching metal paper tinsel.
14. method as claimed in claim 13, described method comprises:
In the preimpregnation material that connects capacitor, form one or more paths.
15. a device comprises:
Imbed at least one capacitor of one deck dielectric material at least, this capacitor comprises:
Metal forming, one deck dielectric material, dielectric isolation layer and first electrode at least, wherein said first electrode is formed by the ground floor, SI semi-insulation separator and the printing electrode of part metals paper tinsel that cover whole described dielectric material;
The second layer dielectric material adjacent with dielectric isolation layer with first electrode; And
Form and second electrode adjacent with second layer dielectric material by described metal forming with described ground floor dielectric material.
16. a device, it is formed by each described method in the claim 8,11 or 14.
17., it is characterized in that described device is selected from system and the interior system of encapsulation in plug-in unit, printed substrate, multi-chip module, area array package, the encapsulation as claim 7,10 or 15 each described devices.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69211905P | 2005-06-20 | 2005-06-20 | |
| US60/692,119 | 2005-06-20 | ||
| US11/453,496 | 2006-06-15 |
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|---|---|
| CN1929718A true CN1929718A (en) | 2007-03-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200610121261 Pending CN1929718A (en) | 2005-06-20 | 2006-06-20 | Improved electrodes, inner layers, capacitors, electronic devices and methods of making thereof |
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| CN (1) | CN1929718A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102737834A (en) * | 2011-04-11 | 2012-10-17 | 佳邦科技股份有限公司 | Conductive structure with embedded electrode, solid capacitor with embedded electrode and manufacture method thereof |
| CN102768907A (en) * | 2011-05-04 | 2012-11-07 | 佳邦科技股份有限公司 | Solid state capacitor and manufacturing device thereof |
-
2006
- 2006-06-20 CN CN 200610121261 patent/CN1929718A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102737834A (en) * | 2011-04-11 | 2012-10-17 | 佳邦科技股份有限公司 | Conductive structure with embedded electrode, solid capacitor with embedded electrode and manufacture method thereof |
| CN102737834B (en) * | 2011-04-11 | 2015-06-24 | 佳邦科技股份有限公司 | Conductive structure with embedded electrode, solid capacitor with embedded electrode and manufacture method thereof |
| CN102768907A (en) * | 2011-05-04 | 2012-11-07 | 佳邦科技股份有限公司 | Solid state capacitor and manufacturing device thereof |
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Open date: 20070314 |