CN1929160A - Method and structure for improving property of phase-changing storage - Google Patents
Method and structure for improving property of phase-changing storage Download PDFInfo
- Publication number
- CN1929160A CN1929160A CN 200510098763 CN200510098763A CN1929160A CN 1929160 A CN1929160 A CN 1929160A CN 200510098763 CN200510098763 CN 200510098763 CN 200510098763 A CN200510098763 A CN 200510098763A CN 1929160 A CN1929160 A CN 1929160A
- Authority
- CN
- China
- Prior art keywords
- pattern
- phase
- layer pattern
- phase change
- changing storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Semiconductor Memories (AREA)
Abstract
This invention provides one method and structure to improve phase change memory characteristics, which comprises the following steps: providing one baseboard and forming one bottom electrode pattern on baseboard; forming one phase changed pattern on bottom electrode pattern; forming one medium pattern onto phase change pattern; forming one isolation structure between medium layer and pattern open; depositing one upper electrode onto medium pattern.
Description
Technical field
The present invention relates to a kind of improvement method and structure of Ovonics unified memory bulk properties, refer to a kind of method and structure of improving existing phase transition storage characteristic especially.
Background technology
Ovonics unified memory (Ovonic Unified Memory; OUM) theory was put forward by ECD (Energy Conversion Devices) company in generation nineteen sixty, the said firm finds that in phase-transition material crystalline state has significantly different with amorphous optical property and conductance, but can carry out inverse conversion fast, have the effect and the purposes of switch (Switching)/storage (Memory).And the know-why of Ovonics unified memory has been to use a chalcogenide (a kind of electroconductive glass) to be connected with an electrode, and with the core of described chalcogenide as storage, by current flow heats electrode or phase-transition material itself, provide state to change necessary energy, the conversion that different operating currents can make this type of material not stop between crystalline state and amorphous state, and its crystallization or noncrystalline state still can be retained after relative operating current condition stops down.Non-volatile, height reads signal, high density, height is write the characteristic of wiping number of times and low-work voltage/electric current, is quite potential non-volatility memorizer so Ovonics unified memory has.Produced Ovonics unified memory then can be widely used in wanting cube little, at a low price, but is not high portable electronic product to rate request.
Existing Ovonics unified memory is the subject matter of desire solution in the preparation, and the firstth, how to dwindle contact area with the reduction power consumption, the secondth, how when dwindling contact area, still to keep the good operating characteristic of memory cell (memorycell).
In the patented technology document, delivered some relevant Ovonics unified memory preparation technology patents and be used for reducing the phase change memory electrodes contact area to solve the consumption problem of energy, reach and reduce that the phase change memory electrode contact surface is long-pending a SOME METHODS, first method such as the United States Patent (USP) the 6545287th that Intel proposed " use alternative deposition to form phase change memory cell (Using selective deposition toform phase-change memory cells) ", the United States Patent (USP) the 6635951st " the small-sized electrode (Small electrode for chalcogenide memories) that is used for chalcogen compound memory " that United States Patent (USP) the 6744088th " phase-change memory of plane mixing layer (Phase change memory device on a planar compositelayer) " and Micron propose discloses in preparation process, the technology that adds etching and cmp is used for reducing the Ovonics unified memory electrode contact surface with generation spacer block (spacer) and amasss, please refer to Fig. 1, it is for using alternative deposition to form the schematic diagram of phase change memory cell, from icon, can find out and insert phase change layer 10 with bend mode, it is because not exclusively form the space in the process of inserting probably that yet PC is not suitable for inserting, and causes breaking phenomena to make conductive effect relatively poor.
But these above-mentioned patents are all the service recorder layer material and fill out the hole, and recording layer material can only use physical vapour deposition (PVD) (Physical Vapor Deposition at present; PVD) fill out the hole, and be not a good hole material of filling out, be easy to generate the unsettled situation of interface character.
Second method, " having the pointed multidigit single cell storage element that contacts " as the United States Patent (USP) the 6746892nd " the low heat leakage and small area of contact mixed electrode (Low heat loss and small contactarea composition electrode for a phase change media memory device) that are used for phase change media storage device " that HP proposed and the United States Patent (USP) USRE37259 that ECD proposed discloses in preparation process, increase the bottom electrode of the etching adjusting process pointed to produce (taperedpoint) of repeated multiple times, long-pending to be used for the reducing Ovonics unified memory electrode contact surface, this manufacture process is very complicated, how to produce minimum tip, aim at exposure repeatedly and etching all is very big problem.
The 3rd method, disclose in preparation process as United States Patent (USP) the 6646297th " the bottom electrode insulation (Lower electrode isolation in a double-wide trench) of double width groove " that Ovonyx proposed and the United States Patent (USP) the 6437383rd " the dual channel insulation and the manufacture method (Dual trench isolation for a phase change memorv celland method of making same) thereof that are used for the phase change torage cell " that Intel proposed, increase groove, etching, technologies such as the different adjustment of sidewall height difference, it is long-pending that the bottom electrode of trenched side-wall (trench/sidewall) is used for reducing the Ovonics unified memory electrode contact surface, the sectional area of each manufacturing sidewall is not necessarily identical, and after making groove, the both sides sidewall has only energy usefulness on one side, relatively accounts for area.
The 4th kind of method, be to deliver the contact that utilizes the electrode film side by samsung, the method can reduce to increase the degree of difficulty of subsequent technique because of film thickness, the mask alignment control degree influences the contact area size of side greatly, difficult the dwindling simultaneously therefore of the width of electrode film, length may influence dwindling of memory cell area in addition, influences the density of memory, please refer to Fig. 2, it is existing memory cell structural representation, and its heating region concentrates on below the phase change layer 10.
Summary of the invention
For solving above-mentioned existing shortcoming, the object of the present invention is to provide a kind of method and structure of improving property of phase-changing storage.
The invention provides under the ability of existing semiconductor preparing process, improve the manufacture method and the structure of property of phase-changing storage performance, can be when dwindling different layers storeroom contact area, it is stable to reach element characteristic, technology is simple, reduces the purpose of using electric current and operand power.
In order to reach above-mentioned purpose, the present invention proposes a kind of method of improving property of phase-changing storage, and this method comprises: a substrate is provided; Form a bottom electrode pattern on described substrate; Form a phase change layer pattern on described bottom electrode pattern; Form a dielectric layer pattern on described phase change layer pattern; Form a spacer block structure between described dielectric layer pattern opening; And deposition one top electrode pattern is on described dielectric layer pattern.
Described method also further comprises: add at least one adhesion layer, at least one heating layer or at least one etching stop layer in the either side of described phase change layer pattern.
Described phase change layer pattern is a horizontal type film.
Described interval block structured forms technology, is to realize by secondarily etched.
Described deposition one top electrode pattern process utilizes chemical gaseous phase depositing process to realize.
Described phase change layer pattern and top electrode are filled out the structure that the cavity portion pattern is an inverted T-shaped shape.
The present invention also proposes a kind of structure of improving property of phase-changing storage, and it comprises: a substrate; One bottom electrode pattern is formed on the described substrate; One phase change layer pattern is formed on the described bottom electrode pattern; One dielectric layer pattern is formed on the described phase change layer pattern; One spacer block structure is formed between the described dielectric layer pattern opening; And a top electrode pattern, be deposited on the described dielectric layer pattern.
Described structure also further comprises the either side that at least one adhesion layer, at least one heating layer or at least one etching stopping series of strata make an addition to described phase change layer pattern.
Described phase change layer pattern is a horizontal type film.
Described phase change layer pattern and top electrode are filled out the structure that the cavity portion pattern is an inverted T-shaped shape.
The present invention also provides a kind of structure of improving property of phase-changing storage, and it comprises: a substrate; One bottom electrode pattern is formed on the described substrate; One phase change layer pattern is formed on the described bottom electrode pattern; One dielectric layer pattern is formed on the described phase change layer pattern; A plurality of adhesion layers are formed at the upper and lower sides of described phase change layer pattern; One spacer block structure is formed between the described dielectric layer pattern opening; And a top electrode pattern, be deposited on the described dielectric layer pattern.
Described adhesion layer is heating layer or etching stop layer.
Described phase change layer pattern is a horizontal type film.
Described phase change layer pattern and top electrode are filled out the structure that the cavity portion pattern is an inverted T-shaped shape.
The present invention not only can solve the shortcoming on the prior art, even have the contact area that reduces top electrode and recording layer, to dwindle the element operation current density, can use former the design's mask, save manufacture difficulty, technology is simple and can use metal to fill out the characteristics that the hole solves the shape influence.
Description of drawings
Fig. 1 is the existing schematic diagram that uses alternative deposition with formation phase change memory cell;
Fig. 2 is existing memory cell structural representation; And
Fig. 3 improves the bottom electrode pattern preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention;
Fig. 4 improves the phase change layer pattern preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention;
Fig. 5 improves the dielectric layer pattern preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention;
Fig. 6 improves the etch areas space preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention;
Fig. 7 improves another dielectric layer pattern of covering preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention;
Fig. 8 improves the spacer block structure preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention;
Fig. 9 improves the top electrode pattern preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention;
Figure 10 improves another embodiment of the phase change layer pattern of property of phase-changing storage for the present invention.
The main element symbol description:
Phase change layer pattern 10 substrates 12
Etching stop layer (or an adhesion layer) 22,24
Embodiment
Reach technology, method and the effect that set purpose is taked in order further to understand the present invention, see also following about detailed description of the present invention and accompanying drawing, can have deeply and concrete understanding purpose of the present invention, feature and characteristics thus, yet appended graphic only be used to provide reference and explanation are not to be used for the present invention is limited.
On many semiconductor preparing process, the characteristic performance of element usually is with size very big correlation to be arranged, the present invention proposes a kind of manufacture method of improving the memory characteristics performance, and the practice simply but can be kept and dwindle the effect that contact area is saved operand power originally.
Please refer to Fig. 3, it improves the bottom electrode pattern preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention, form a bottom electrode pattern 14 on a substrate 12, layout has the driving element of memory cell on the wherein said substrate 12, and this technology is the preceding process operation of CMOS simultaneously; Fig. 4 improves the phase change layer pattern preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention, on described bottom electrode pattern 14, form a phase change layer pattern 10, wherein said phase change layer pattern 10 can be the shape that forms a horizontal growth and patterned films with depositional mode, another embodiment can be and adds at least one adhesion layer, at least one heating layer or at least one etching stop layer are in the either side of described phase change layer pattern 10, so that etching opening or metal adhere to or improve heating efficiency, this moment, minimum contact area and thermal source district were positioned at the top of described phase change layer pattern 10.
Fig. 5 forms a dielectric layer pattern 16 for the dielectric layer pattern process implementing illustration intention that the present invention improves property of phase-changing storage on described phase change layer pattern 10 and described bottom electrode pattern 14; As shown in Figure 6, Fig. 6 utilizes general lithographic technique to etch a regional space in described dielectric layer pattern 16 for the etch areas space preparation technology embodiment schematic diagram that the present invention improves property of phase-changing storage; Thereafter as shown in Figure 7, Fig. 7 covers another dielectric layer pattern 17 of one deck for another dielectric layer pattern of covering preparation technology embodiment schematic diagram that the present invention improves property of phase-changing storage on described dielectric layer pattern 16; Then as shown in Figure 8, Fig. 8 improves the spacer block structure preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention, utilize general lithographic technique etc. to the described dielectric layer pattern 17 of etching, form a spacer block structure 20 because of waiting result to etching to cause on the described regional space in described dielectric layer pattern 16, with definition contact area size.
Fig. 9 improves the top electrode pattern preparation technology embodiment schematic diagram of property of phase-changing storage for the present invention, on the described dielectric layer pattern 16 and be filled between the described spacer block structure 20 deposition one top electrode pattern 18, so can increase and fill out the hole ability and avoid the loose contact situation, the similar inverted T-shaped shape of overall structure, metal tip is arranged equally, can dwindle contact area, wherein said depositing operation can use a chemical vapour deposition (CVD) (Chemical Vapor Deposition; CVD) method is finished.
Figure 10 improves another embodiment of the phase change layer pattern 10 of property of phase-changing storage for the present invention; next side forms to lose a moment at least and stops layer (or an at least one adhesion layer or a zone of heating) 22,24 in described phase change layer pattern 10; the effect of wherein said etching stop layer 22,24 (or described adhesion layer or zone of heating) is when the action that waits to the described dielectric layer pattern 17 of etching, to protect described phase change layer pattern 10 can not be etched, increase the adhesive force of phase change layer material and storeroom up and down or to increase heating efficiency.
The present invention innovates part and is and will moves on to the below in order to the recording layer material of filling out the hole in the prior art, become the film of a horizontal growth and pattern, fill out the hole and use the contact area that the upper/lower electrode metal material dwindles this instead, adopt this structure first can eliminate recording layer material and be not suitable for the shortcoming of filling out the hole, second can improve the interface characteristic that recording layer material and electrode metal connect face (can add adhesion layer if necessary between recording layer material and electrode material, heating layer or etching stop layer), the 3rd can use the metallochemistry vapour deposition to fill out the hole, solve physical vapour deposition (PVD) and fill out the not good problem of hole ability, increased the manufacturability of dwindling after the contact area greatly, make contact area down micro, raising component fabrication rate of finished products and characteristic performance again.
The present invention compared with prior art is the difference of primary structure, the equal position of the minimum contact area of metal and phase-transition material is below phase-change material layer in the traditional structure, the present invention then reverses this traditional structure, the minimum contact area position that makes metal and phase-transition material is above phase-change material layer, keep the planarization of phase-transition material, the preferable hole ability of filling out of collocation metal material is improved the memory characteristics performance, and the adjustment of filling out the hole ability can be adjusted the depth-to-width ratio in hole by the deposit thickness that changes dielectric layer, and the size of adjusting the hole with the thickness that changes the spacer block film realizes.
Contact area in order to dwindle really between phase-transition material and bottom electrode, can use spacer block technology, light displacement (Photo-Shift) technology or other technology to make small contact area, in order to increase adhesive force and heating efficiency, can insert between phase-transition material and levels electrode layer and adhere to heating layer to promote the performance of memory cell (cell) characteristic.
The present invention not only can solve the shortcoming on the prior art, even have the contact area that reduces top electrode and recording layer, to dwindle the element operation current density, can use former the design's mask, save manufacture difficulty, technology is simple and can use metal to fill out the characteristics that the hole solves the shape influence.
In sum, the present invention can provide a kind of far different in traditional design by above-mentioned disclosed technology really, can improve whole use value greatly.
But above-mentioned disclosed graphic, explanation; only be embodiments of the invention; all personnel that are familiar with the technology of the present invention can do other all improvement according to above-mentioned explanation, and these change and still to belong to the scope that invention spirit of the present invention and the present invention ask for protection.
Claims (14)
1. a method of improving property of phase-changing storage is characterized in that, comprising:
One substrate is provided;
Form a bottom electrode pattern on described substrate;
Form a phase change layer pattern on described bottom electrode pattern;
Form a dielectric layer pattern on described phase change layer pattern;
Form a spacer block structure between described dielectric layer pattern opening; And
Deposit a top electrode pattern on described dielectric layer pattern.
2. the method for improving property of phase-changing storage according to claim 1 is characterized in that, also further comprises: add at least one adhesion layer, at least one heating layer or at least one etching stop layer in the either side of described phase change layer pattern.
3. the method for improving property of phase-changing storage according to claim 1 is characterized in that, described phase change layer pattern is a horizontal type film.
4. the method for improving property of phase-changing storage according to claim 1 is characterized in that, described interval block structured forms technology, realizes by secondarily etched.
5. the method for improving property of phase-changing storage according to claim 1 is characterized in that, described deposition one top electrode pattern process utilizes chemical gaseous phase depositing process to realize.
6. the method for improving property of phase-changing storage according to claim 1 is characterized in that, described phase change layer pattern and top electrode are filled out the structure that the cavity portion pattern is an inverted T-shaped shape.
7. structure of improving property of phase-changing storage is characterized in that comprising:
One substrate;
One bottom electrode pattern is formed on the described substrate;
One phase change layer pattern is formed on the described bottom electrode pattern;
One dielectric layer pattern is formed on the described phase change layer pattern;
One spacer block structure is formed between the described dielectric layer pattern opening; And
One top electrode pattern is deposited on the described dielectric layer pattern.
8. the structure of improving property of phase-changing storage according to claim 7 is characterized in that, also further comprises the either side that at least one adhesion layer, at least one heating layer or at least one etching stopping series of strata make an addition to described phase change layer pattern.
9. the structure of improving property of phase-changing storage according to claim 7 is characterized in that, described phase change layer pattern is a horizontal type film.
10. the structure of improving property of phase-changing storage according to claim 7 is characterized in that, described phase change layer pattern and top electrode are filled out the structure that the cavity portion pattern is an inverted T-shaped shape.
11. a structure of improving property of phase-changing storage is characterized in that, comprising:
One substrate;
One bottom electrode pattern is formed on the described substrate;
One phase change layer pattern is formed on the described bottom electrode pattern;
One dielectric layer pattern is formed on the described phase change layer pattern;
A plurality of adhesion layers are formed at the upper and lower sides of described phase change layer pattern;
One spacer block structure is formed between the described dielectric layer pattern opening; And
One top electrode pattern is deposited on the described dielectric layer pattern.
12. the structure of improving property of phase-changing storage according to claim 11 is characterized in that, described adhesion layer is heating layer or etching stop layer.
13. the structure of improving property of phase-changing storage according to claim 11 is characterized in that, described phase change layer pattern is a horizontal type film.
14. the structure of improving property of phase-changing storage according to claim 11 is characterized in that, described phase change layer pattern and top electrode are filled out the structure that the cavity portion pattern is an inverted T-shaped shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510098763 CN1929160A (en) | 2005-09-07 | 2005-09-07 | Method and structure for improving property of phase-changing storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510098763 CN1929160A (en) | 2005-09-07 | 2005-09-07 | Method and structure for improving property of phase-changing storage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1929160A true CN1929160A (en) | 2007-03-14 |
Family
ID=37859035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510098763 Pending CN1929160A (en) | 2005-09-07 | 2005-09-07 | Method and structure for improving property of phase-changing storage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1929160A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275282A (en) * | 2011-03-17 | 2017-10-20 | 美光科技公司 | Semiconductor structure and the method for forming semiconductor structure |
-
2005
- 2005-09-07 CN CN 200510098763 patent/CN1929160A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275282A (en) * | 2011-03-17 | 2017-10-20 | 美光科技公司 | Semiconductor structure and the method for forming semiconductor structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20070040159A1 (en) | Manufacturing method and structure for improving the characteristics of phase change memory | |
| WO2021003904A1 (en) | Phase change memory and manufacturing method thereof | |
| US20120061637A1 (en) | 3-d structured nonvolatile memory array and method for fabricating the same | |
| CN1828922A (en) | Phase change memory devices and fabrication methods thereof | |
| TW201010152A (en) | Memory array with diode driver and method for fabricating the same | |
| CN1574410A (en) | Semiconductor memory device and method of fabricating the same | |
| JP2008153624A (en) | Carbon filament memory and method for forming it | |
| CN100530739C (en) | Phase change memory unit with loop phase change material and its making method | |
| CN1819295A (en) | Memory cell and method of forming same, memory cell array and operating method thereof | |
| CN1828923A (en) | Phase change memory devices and fabrication methods thereof | |
| WO2014040358A1 (en) | Tisin material layer-containing phase-change memory unit and manufacturing method therefor | |
| WO2012126186A1 (en) | Resistance variable memory and fabricating method thereof | |
| CN110212088B (en) | Two-dimensional material phase change memory cell | |
| CN1933207A (en) | Phase transformation memory storing unit and producing method thereof | |
| CN103682089A (en) | High-speed, high-density and lower power consumption phase-change memory unit and preparation method thereof | |
| CN111029362B (en) | Preparation method of three-dimensional integrated circuit structure of high-density phase change memory | |
| CN103187523B (en) | Semiconductor device and manufacturing method thereof | |
| CN101339921B (en) | Manufacturing method of bi-polar transistor array isolated by double shallow slots | |
| US20120007033A1 (en) | Phase-change memory device and method of manufacturing the same | |
| CN1929160A (en) | Method and structure for improving property of phase-changing storage | |
| CN101459129B (en) | Self-aligning Schottky diode and corresponding resistor conversion memory production method | |
| CN113594199B (en) | Phase change memory, control method and manufacturing method thereof | |
| KR100701157B1 (en) | Non-volatile memory device having phase change material and method of manufacturing the same | |
| CN101388401B (en) | Diode driving resistor conversion memory cell and manufacturing method thereof | |
| CN101882617B (en) | Schottky diode, semiconductor memory and manufacturing technology thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |