CN101388401B - Diode driving resistor conversion memory cell and manufacturing method thereof - Google Patents
Diode driving resistor conversion memory cell and manufacturing method thereof Download PDFInfo
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- CN101388401B CN101388401B CN2008102019011A CN200810201901A CN101388401B CN 101388401 B CN101388401 B CN 101388401B CN 2008102019011 A CN2008102019011 A CN 2008102019011A CN 200810201901 A CN200810201901 A CN 200810201901A CN 101388401 B CN101388401 B CN 101388401B
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Abstract
The invention discloses a diode driving resistance conversion memory cell and a production method thereof, which comprises a base, a first conductive type semiconductor which is arranged on the base, a storage cell with resistance conversion capability which is arranged on the semiconductor and an electrode which is arranged on the resistance conversion storage cell, wherein the surface of the first conductive type semiconductor which is adjacent with the storage cell is provided with a second conductive type doping, the second conductive type doping and the first conductive type semiconductor which is not doped can form a driving diode structure, thereby conducting the gate and driving for the upper storage cell. The invention makes memory materials disperse into the semiconductor through the diffusion technology to form the diode structure, in order to greatly increase the storage concentration of the memory, has simple technology and low cost, and can improve the market competitiveness of the diode driving resistance conversion memory cell.
Description
Technical field
The invention belongs to microelectronic, relate to a kind of diode driving resistor conversion memory cell and manufacturing approach thereof.
Background technology
High density, high-performance semiconductor memory, particularly nonvolatile memory are the foundation stones of future information technology development, still all play an important role in the national economy in daily life, have vast market.At present, the kind of memory mainly comprises: static memory (SRAM), dynamic memory (DRAM), disk, flash memory (Flash), ferroelectric memory etc.; And other memories, for example phase transition storage, resistance random access memory, electric probe storage system etc. have also received extensive studies and concern as the candidate of memory of future generation.
The basic principle of phase transition storage and resistance random access memory is to utilize that the reversible variation of storage medium between high resistance and low resistance realizes the storage of data " 1 " and " 0 " in the device; Because resistance is expected to realize that through the signal of telecommunication control approximate continuous changes; So the quasi-resistance transit storage is expected to realize multistage storage, thereby significantly promote the information storage capability of memory.The advantage of electric resistance transition memory also comprises high speed, high data retention ability and low cost, is expected to part or significantly replaces face difficult flash memory at present along with improving of technology node, therefore has huge market potential.
In highdensity electric resistance transition memory, adopting diode to replace present field-effect transistor becomes trend, because diode has less size than field-effect transistor, can significantly promote the storage density of memory.Current, make diode and need spend bigger cost, also increased the unit cost of electric resistance transition memory, thereby developed the diode fabricating method that a kind of technology is easy, cost is low and become one of present main direction of studying.
Phase-change materials such as GeSbTe that widely adopts in the existing electric resistance transition memory and SbTe have semi-conductive characteristic; Pass through method of diffusion; Sb in the above-mentioned material or Te are diffused in the semiconductor, can realize the n type of semi-conducting material (like silicon) is mixed.Therefore, can adopt the diffusion effect of storage medium to make diode, storage medium has dual function in this type of electric resistance transition memory like this: i.e. memory function and diffusing, doping function.And according to a patent application (application number: 200810201407.5 of the applicant (Shanghai Inst. of Microsystem and Information Technology, Chinese Academy of Sci) in application on October 20th, 2008; Denomination of invention: " stibium containing material is as the application of resistance conversion storage material "; Inventor: people such as Zhang Ting); Stibium containing material also has the resistance translation function; And Sb has become n type doping method commonly used on a kind of semiconductor production line to the doping of silicon, and therefore, adopting stibium containing material to make the electric resistance transition memory that diode drives also becomes possibility.Resistor conversion memory cell manufacturing process in order to the top manufactured is simple, and cost will have competitiveness.
Summary of the invention
Technical problem to be solved by this invention is: a kind of diode driving resistor conversion memory cell and manufacturing approach thereof are provided.
For solving the problems of the technologies described above, the present invention adopts following technical scheme.
A kind of diode driving resistor conversion memory cell, said memory cell comprise substrate, are arranged on suprabasil first conductive type semiconductor, are arranged on the memory cell with resistance transfer capability on the semiconductor and are arranged on the electrode on the resistor conversion memory unit; Said first conductive type semiconductor is a P type semiconductor; The surface that said first conductive type semiconductor is adjacent with memory cell is stored the unit atom through diffuseing to form the second conduction type doped region; The said second conduction type doped region is N type zone; The said second conduction type doped region forms the P-N knot with first conductive type semiconductor that is not doped, and constitutes diode structure; The material of said memory cell is the material with resistance transfer capability;
Said memory cell is:
A) Sb
3.6Te phase-change material, Sb after diffusion technology in the phase-change material and Te atom diffusion form n type zone in p type doped silicon;
Or b) the Sb material of mixing Si that is formed by suprabasil p type Si atom diffusion by the interface with resistance transfer capability, and in this material the atomic percent of Sb atom between 40%～100%;
Or c) the Sb material of mixing Ti that is formed by the Ti atom diffusion in the electrode by the interface with resistance transfer capability, and in this material the atomic percent of Sb atom between 40%～100%;
Or d) GeSbTe phase-change material, the Ge after diffusion technology in the phase-change material, Sb and Te atom diffusion form n type zone in p type doped silicon.
As another kind of preferred version of the present invention, said memory cell with resistance transfer capability is twin-stage memory cell or multi-level memory cell.
As another preferred version of the present invention, said memory cell with resistance transfer capability is a phase-change memory cell.
As another preferred version of the present invention, the material of said electrode is one or more among W, Ti, TiN, Al, Cu, TiW, Ni, the Ag.
As another preferred version of the present invention, said semiconductor is Si.
A kind of manufacturing approach of diode driving resistor conversion memory cell comprises the steps:
1) in substrate, make first conductive type semiconductor, said first conductive type semiconductor is a P type semiconductor;
2) above first conductive type semiconductor, make the storage medium unit with resistance transfer capability, the material of said storage medium unit is the material with resistance transfer capability; Said memory cell is: a) Sb
3.6Te phase-change material, Sb after diffusion technology in the phase-change material and Te atom diffusion form n type zone in p type doped silicon; Or b) the Sb material of mixing Si that is formed by suprabasil p type Si atom diffusion by the interface with resistance transfer capability, and in this material the atomic percent of Sb atom between 40%～100%; Or c) the Sb material of mixing Ti that is formed by the Ti atom diffusion in the electrode by the interface with resistance transfer capability, and in this material the atomic percent of Sb atom between 40%～100%; Or d) GeSbTe phase-change material, the Ge after diffusion technology in the phase-change material, Sb and Te atom diffusion form n type zone in p type doped silicon;
3) on storage medium, make electrode;
4) through diffusion technology storage medium is diffused in first conductive type semiconductor; Formation is to the second conduction type doped region of first conductive type semiconductor near surf zone; The said second conduction type doped region is N type zone, and second conduction type of formation mixes and the first conductivity regions semiconductor that is not doped constitutes the driving diode structure.
As a kind of preferred version of the present invention, said step 1) adopts ion implantation or catalysis revulsion.
As another kind of preferred version of the present invention, said storage medium with resistance transfer capability is to adopt the signal of telecommunication to realize the storage medium of resistance conversion.
As another preferred version of the present invention, said storage medium with resistance transfer capability is for itself having the phase-change material of resistance transfer capability.
As another preferred version of the present invention, the manufactured materials of said electrode is one or more among W, Ti, TiN, Al, Cu, TiW, Ni, the Ag.
As another preferred version of the present invention, said semiconductor is Si.
Beneficial effect of the present invention is: it provides a kind of manufacturing approach of diode driving resistor conversion memory cell; And the technology of this method is easy; Can increase substantially the storage density of memory; Reduce cost, strengthen the market competitiveness of diode driving resistor conversion memory cell.
Description of drawings
Do further explain below in conjunction with the accompanying drawing specific embodiments of the invention.
Fig. 1 is the structural representation of the diode driving resistor conversion memory cell of phase-change material for a kind of storage medium;
Fig. 2 is the structural representation of the diode driving resistor conversion memory cell of stibium containing material for a kind of storage medium;
Fig. 3 is the structural representation of the diode driving resistor conversion memory cell of stibium containing material for another kind of storage medium;
Fig. 4 is the structural representation of the diode driving resistor conversion memory cell of phase-change material for another kind of storage medium;
Fig. 5 is the structural representation of the diode driving resistor conversion memory cell of stibium containing material for another storage medium;
Fig. 6 A-D is that storage medium shown in Figure 2 is the manufacture process of the diode driving resistor conversion memory cell of stibium containing material;
Fig. 7 A-H is that a kind of storage medium is the manufacture process of the diode driving resistor conversion memory cell of phase-change material.
The primary clustering symbol description:
1,6,18,24,25 is dielectric material;
2,7,14,19,26, be P type heavily doped silicon, foreign atom is B;
3,16 be electrode TiW;
4,27,36 be Sb
3.6The Te phase-change material;
15 is the GeSbTe phase-change material;
5,17,29 be the phase-change material n type zone that the Sb in the material and Te atom diffusion form in the p type silicon after diffusion technology;
8,13,21,28,37 be electrode Ti;
9,20,27 be the Sb material;
10,23 be Sb and be diffused into the n type doped regions that forms in the silicon;
11,22,30 be electrode Ti and be diffused into the Sb zone of mixing Ti that forms among the Sb;
31, substrate;
32, square opening;
33, Ni film;
34, deposition B doped amorphous silicon;
35, polysilicon;
38, be the phase-change material n type zone that the Sb in the material and Te atom diffusion form in the polysilicon after diffusion technology.
Embodiment
Embodiment one
A kind of diode driving resistor conversion memory cell comprises substrate, is arranged on suprabasil first conductive type semiconductor, is arranged on the memory cell with resistance transfer capability on the semiconductor and is arranged on the electrode on the resistor conversion memory unit; Said first conductive type semiconductor is a P type semiconductor; The surface that said first conductive type semiconductor is adjacent with memory cell has second conduction type and mixes; The zone that said second conduction type doping forms is N type zone, and said second conduction type mixes and first conductive type semiconductor formation that is not doped drives diode structure.Said memory cell with resistance transfer capability is a phase-change memory cell, and the material of said memory cell is the material with resistance transfer capability, and the material of said electrode is TiW.As shown in Figure 1, a kind of storage medium is the structure of the diode driving resistor conversion memory cell of phase-change material, comprises a diode and a memory cell, i.e. 1D1R structure.Among the figure, 1 is dielectric material, and 2 is p type doped silicon, and foreign atom is B, and 3 is electrode TiW, and 4 is Sb
3.6The Te phase-change material; 5 is the phase-change material 4 n type zone that the Sb in the material and Te atom diffusion form in the p type doped silicon 2 after diffusion technology; Phase-change material 5 has formed diode jointly with p type doped silicon 2, and the diode of formation and phase-change material 4 have formed the 1D1R structure.In the application of memory chip, also need peripheral drive circuit.
Embodiment two
The difference of present embodiment and embodiment one is; Said storage medium unit with resistance transfer capability be by the interface by semiconductor or/and have the memory cell that the stibium containing material of resistance transfer capability is processed after the atom diffusion in the electrode; The atomic percent of antimony atoms is between 40%～100% in the stibium containing material, and the material of said electrode is Ti.Like Fig. 2, shown in 3; A kind of storage medium is the structure of the diode driving resistor conversion memory cell of stibium containing material; The difference of this element structure and Fig. 1 is; What this structure adopted is not phase-change material, but adopts the diffusing, doping that obtains electrode material to have the storage medium of resistance transfer capability afterwards just now.Among the figure, 6 is dielectric material, and 7 is the silicon that p type B mixes; 8 is the Ti electrode, and 9 is the Sb material, and 10 are diffused into the n type doped regions that forms in the silicon for Sb; N type doped regions 10 has formed diode jointly with the silicon 7 that p type B mixes; The 11 Sb zones of mixing Ti that form in the Sb for the Ti electrode diffusion, the Sb that Ti mixes has the resistance transfer capability, can be used as memory cell.N type doped regions 10 has formed the 1D1R structure jointly with silicon 7 diode that forms and the Sb layer 11 of mixing Ti that p type B mixes.Certainly, among this figure, diffusion zone also can occur in the following interface of Sb material, and is as shown in Figure 3, and 12 among the figure can be used as memory cell equally for the Sb zone of mixing Si that the Si atom diffusion forms in the Sb.
Embodiment three
As shown in Figure 4; Another kind of storage medium is the structure of the diode driving resistor conversion memory cell of GeSbTe phase-change material; Be the area of the area of GeSbTe storage medium 15 greater than heavy doping p type silicon 14 with the difference of Fig. 1, be " mushroom " shape structure, 16 is the TiW electrode material; 18 is dielectric material, and 17 are the phase-change material comprehensive doping effect that the Ge in the material, Sb and Te atom diffusion form in the p type silicon after the diffusion technology zone that is the n type.
Embodiment four
As shown in Figure 5; Another storage medium is that structure and the difference of Fig. 2 of the diode driving resistor conversion memory cell of stibium containing material is the area of the area of Sb storage medium 20 greater than heavy doping p type silicon 19; And form be diffused into the Sb zone 22 of mixing Ti that forms in the Sb material 20 through electrode Ti21 and have the resistance transfer capability; Its area of plane is identical with electrode Ti 21, and p type silicon 19 has formed diode structure with n type zone 23, and 24 is dielectric material among the figure.
Embodiment five
A kind of manufacturing approach of diode driving resistor conversion memory cell comprises the steps: 1) manufacturing first conductive type semiconductor in substrate; 2) above first conductive type semiconductor, make storage medium with resistance transfer capability; 3) on storage medium, make electrode; 4) through diffusion technology the part of atoms in the storage medium is diffused in first conductive type semiconductor; Formation is mixed to second conduction type of first conductive type semiconductor near surf zone, and the second conduction type doped region of formation constitutes the driving diode structure with the semiconductor of first conduction type that is not doped.Said step 1) adopts ion implantation or catalysis revulsion.Said storage medium with resistance transfer capability is to adopt the signal of telecommunication to realize the storage medium of resistance conversion.Said storage medium with resistance transfer capability is the stibium containing material that the interface has the resistance transfer capability after by the atom diffusion in semiconductor, the electrode, and the atomic percent of antimony atoms is between 40%～100% in the stibium containing material.
Fig. 6 A-D is the manufacture process of the diode driving resistor conversion memory cell of stibium containing material for making storage medium shown in Figure 2.At first, manufacturing hole array in substrate, the sectional view of unit are shown in Fig. 6 A, and wherein 25 is dielectric material, and 26 is In doped p type silicon.Deposition Sb material 27 adopts chemical mechanical polishing method that redundance is skimmed, and obtains the structure shown in Fig. 6 B after the planarization.Make electrode, electrode material is W, shown in Fig. 6 C.In temperature is annealing 10 hours in the annealing furnace of Ar gas shiled of 350 degree, obtains the structure illustrated like Fig. 6 D, and wherein, 29 for antimony material 27 is diffused into the zone of the n type that forms in the p type silicon 26, and P type doped silicon 26 forms diode structures with n type zone 29; And the zone that 30 Sb that form in the antimony material 27 for the W atom diffusion in the electrode mix W has the resistance transfer capability.So, just, produced the cellular construction of a kind of diode driving resistor conversion memory as shown in Figure 2.
Embodiment six
The difference of present embodiment and embodiment five is that said storage medium with resistance transfer capability is for itself having the phase-change material of resistance transfer capability, and the material of said electrode is TiW.Fig. 7 A-H is that a kind of storage medium is the manufacture process of the diode driving resistor conversion memory cell of phase-change material.At first, in substrate 31, make square opening 32, sectional view (has omitted the circuit of below, has not had but do not represent) shown in Fig. 7 A.Vapour deposition Ni film 33 adopts back carving technology, and the unnecessary Ni film of surface and cell wall is removed, and obtains the structural representation shown in Fig. 7 B.Deposition B doped amorphous silicon 34 is shown in Fig. 7 C.After annealing in process, obtain polysilicon 35 by means of the induction of Ni film 33, shown in Fig. 7 D.Adopt chemico-mechanical polishing again and return carving technology, obtain the structure shown in Fig. 7 E.Fill Sb
3Te phase-change material 36 is used the chemico-mechanical polishing planarization, obtains the structure shown in Fig. 7 F.And then make electrode 37, shown in Fig. 7 G.Adopt diffusion technology, make between phase-change material and the polysilicon and spread, obtain the structure like Fig. 7 H, 38 is Sb
3The zone of the n type that Sb in the Te phase-change material and Te atom diffusion form in the polysilicon 35, n type zone 38 has formed diode with p type zone 35, is used to drive the memory cell 36 of top.
The present invention is diffused into storage material through diffusion technology and forms diode structure in the semiconductor; Thereby increase substantially the storage density of memory; And technology of the present invention is easy, and cost has competitiveness, can strengthen the market competitiveness of diode driving resistor conversion memory cell.
Here description of the invention and application is illustrative, is not to want with scope restriction of the present invention in the above-described embodiments.Here the distortion of the embodiment that is disclosed and change are possible, and the replacement of embodiment is known with the various parts of equivalence for those those of ordinary skill in the art.Those skilled in the art are noted that; Under the situation that does not break away from spirit of the present invention or substantive characteristics; The present invention can be with other forms, structure, layout, ratio, and realizes with other elements, material and parts, as; The manufactured materials of electrode is not limited to the material in the foregoing description, can be among W, Ti, TiN, Al, Cu, TiW, Ni, the Ag one or more; Certainly, can also be other materials.
Claims (10)
1. diode driving resistor conversion memory cell, it is characterized in that: said memory cell comprises substrate, is arranged on suprabasil first conductive type semiconductor, is arranged on the memory cell with resistance transfer capability on the semiconductor and is arranged on the electrode on the resistor conversion memory unit; Said first conductive type semiconductor is a P type semiconductor; The surface that said first conductive type semiconductor is adjacent with memory cell is stored the unit atom through diffuseing to form the second conduction type doped region; The said second conduction type doped region is N type zone; The said second conduction type doped region forms the P-N knot with first conductive type semiconductor that is not doped, and constitutes diode structure; The material of said memory cell is the material with resistance transfer capability;
Said memory cell is:
A) Sb
3.6Te phase-change material, Sb after diffusion technology in the phase-change material and Te atom diffusion form n type zone in p type doped silicon;
Or b) the Sb material of mixing Si that is formed by suprabasil p type Si atom diffusion by the interface with resistance transfer capability, and in this material the atomic percent of Sb atom between 40%～100%;
Or c) the Sb material of mixing Ti that is formed by the Ti atom diffusion in the electrode by the interface with resistance transfer capability, and in this material the atomic percent of Sb atom between 40%～100%;
Or d) GeSbTe phase-change material, the Ge after diffusion technology in the phase-change material, Sb and Te atom diffusion form n type zone in p type doped silicon.
2. diode driving resistor conversion memory cell according to claim 1 is characterized in that: said memory cell with resistance transfer capability is to adopt the signal of telecommunication to realize the memory cell of resistance conversion.
3. diode driving resistor conversion memory cell according to claim 1 is characterized in that: said memory cell with resistance transfer capability is twin-stage memory cell or multi-level memory cell.
4. diode driving resistor conversion memory cell according to claim 1 is characterized in that: said memory cell with resistance transfer capability is a phase-change memory cell.
5. diode driving resistor conversion memory cell according to claim 4 is characterized in that: the material of said electrode is one or more among W, Ti, TiN, Al, Cu, TiW, Ni, the Ag.
6. the manufacturing approach of diode driving resistor conversion memory cell according to claim 1, it is characterized in that: said method comprises the steps:
1) in substrate, make first conductive type semiconductor, said first conductive type semiconductor is a P type semiconductor;
2) above first conductive type semiconductor, make the storage medium unit with resistance transfer capability, the material of said storage medium unit is the material with resistance transfer capability; Said memory cell is: a) Sb
3.6Te phase-change material, Sb after diffusion technology in the phase-change material and Te atom diffusion form n type zone in p type doped silicon; Or b) the Sb material of mixing Si that is formed by suprabasil p type Si atom diffusion by the interface with resistance transfer capability, and in this material the atomic percent of Sb atom between 40%～100%; Or c) the Sb material of mixing Ti that is formed by the Ti atom diffusion in the electrode by the interface with resistance transfer capability, and in this material the atomic percent of Sb atom between 40%～100%; Or d) GeSbTe phase-change material, the Ge after diffusion technology in the phase-change material, Sb and Te atom diffusion form n type zone in p type doped silicon;
3) on storage medium, make electrode;
4) through diffusion technology storage medium is diffused in first conductive type semiconductor; Formation is to the second conduction type doped region of first conductive type semiconductor near surf zone; The said second conduction type doped region is N type zone, and second conduction type of formation mixes and the first conductivity regions semiconductor that is not doped constitutes the driving diode structure.
7. the manufacturing approach of diode driving resistor conversion memory cell according to claim 6 is characterized in that: said step 1) employing ion implantation or catalysis revulsion.
8. the manufacturing approach of diode driving resistor conversion memory cell according to claim 6 is characterized in that: said storage medium with resistance transfer capability is to adopt the signal of telecommunication to realize the storage medium of resistance conversion.
9. the manufacturing approach of diode driving resistor conversion memory cell according to claim 6, it is characterized in that: said storage medium with resistance transfer capability is for itself having the phase-change material of resistance transfer capability.
10. the manufacturing approach of diode driving resistor conversion memory cell according to claim 9, it is characterized in that: the manufactured materials of said electrode is one or more among W, Ti, TiN, Al, Cu, TiW, Ni, the Ag.
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| CN102268738A (en) * | 2011-07-13 | 2011-12-07 | 中国科学院上海微系统与信息技术研究所 | Sb-Te-Ti phase-change storage material |
| CN115102965B (en) * | 2022-05-25 | 2024-06-25 | 弥费科技(上海)股份有限公司 | SECSGEM communication conversion system and method for semiconductor material storage equipment |
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