CN1924563A - Method for measuring several critical strain values of metal membrane at test current - Google Patents
Method for measuring several critical strain values of metal membrane at test current Download PDFInfo
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- CN1924563A CN1924563A CN 200610104579 CN200610104579A CN1924563A CN 1924563 A CN1924563 A CN 1924563A CN 200610104579 CN200610104579 CN 200610104579 CN 200610104579 A CN200610104579 A CN 200610104579A CN 1924563 A CN1924563 A CN 1924563A
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Abstract
This invention discloses one current load metal film stretching stress value test describing method, which comprises the following steps: processing current load and micro force stretching on the good metal film of interface; during this process recording the metal film stress curve and resistance change curve; acquiring the crack percentage stress curve through micro analysis by observing metal film. The current load metal film and flexible base board system invalid threshold system is composed of three threshold stress, such as the stress from resistance change to stress curve from linear phase to non-linear conversion; micro crack percentage stress curve back reducing as zero theory into threshold extension stress; resistance change to stress curve resistance runaway time into threshold crack unstable stress.
Description
Technical field
The present invention relates to the metallic film material in the industries such as microelectronics, particularly method for measuring several critical strain values of metal membrane at test current.
Background technology
Flexible circuit board is widely used in VLSI (very large scale integrated circuit) and the microelectromechanical systems (MEMS), and generally the metallic film material (as copper Cu and aluminium Al) that connects up as metallization promptly is deposited on and forms metallic film/flexible base, board system on this flexible base, board.As engineering metal construction membraneous material, its plasticity or critical breaking strain are important index very, can be used for material safety design and life prediction.Especially for the membraneous material in the microelectronics industry, owing to be subjected to the current load effect, its plastic yield and critical strain will present the variation that makes new advances.
Under the current load effect, easier realization coupling stretches between metallic film and the flexible base, board, and metallic film will show a kind of plastic yield mode very uniformly, be different from common local deformation unstability failure mode.Therefore, for current load effect metal membrane/flexible base, board system, be badly in need of setting up the critical strain values measuring technology of film.Up to now, the measuring method of relevant metallic film critical strain had not seen that report was arranged, and only was the measurement that has realized macroscopic yield intensity.Measurement as for each performance parameter under the current load does not also realize especially.The present invention will improve innovation to this.
Summary of the invention
The objective of the invention is to overcome above-mentioned prior art deficiency, provide-kind of method for measuring several critical strain values of metal membrane at test current, this method is simple, measure accurately, but each critical strain values of the different current load metal membranes of quantitative measurment is in order to design reference.
Because the quantity of underbead crack and distribution can reflect by the resistance variations of material in the metal material, therefore in metallic film/flexible base, board system is stretched loading and record resistance variations-strain curve, the microstructure of observing metallic film in the drawing process by optical microscope or flying-spot microscope continuously changes, determine micro-crack percentage, draw the change curve of micro-crack percentage, determine critical strain by the unique point on this curve and the resistance variations-strain curve with strain.
Technical scheme of the present invention is carried out according to the following steps:
(1) adopt the magnetron sputtering deposition method with deposit metal films on the polyimide flexible base, board, its elastic strain 〉=2%; Thickness of metal film 200 nanometers-20 micron; Deposition process parameters is: sputtering power 120-180W; Sputtering bias-voltage-60--80V; Background air pressure 3.0 * 10
-3-4.5 * 10
-3Pa; Operating air pressure Ar0.1-0.3Pa;
(2) metallic film power on load to apply by range be that the constant current source of 12V acts directly on two free ends of metallic film and realizes that current density range is 1 * 10
3-1 * 10
4A/m
2
(3) adopting range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the relative changes delta of resistance test measuring apparatus metal thin film resistor=(R-R
0)/R
0, R wherein
0The resistance value of metallic film before being to stretch, R is the resistance value of metallic film in the drawing process) with the variation of strain stress in the drawing process; Promptly obtain ε
iAnd ε
c
(4) microstructure of observing metallic film in the drawing process continuously by flying-spot microscope changes, and draws the change curve of micro-crack percentage f with strain stress, promptly obtains ε
p
Wherein, resistance variations on resistance variations-strain curve is defined as critical crack germinating strain stress from linear stage to the strain of nonlinear phase changing moment
iThe anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack expansion strain stress
pSharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
c
The present invention compares with original technology, the present invention mainly contains the improvement of two aspects, be to be implemented in to measure mechanical property when applying current load on the metallic film on the one hand, the opposing party is each critical strain that can measure film under the different current loads, can realize the damage and the fracture process of analog current loading metal membrane artificially, and quantitative measurement inefficacy critical strain, to determine the critical conditions under the current load effect metal membrane homogeneous deformation condition, the sudden generation of losing efficacy of prevention current load effect metal membrane.
Description of drawings
Fig. 1 (a) is a method of testing structure side view of the present invention;
Fig. 1 (b) is a method of testing structure vertical view of the present invention.
Below in conjunction with embodiment content of the present invention is further elaborated.
Embodiment
With reference to accompanying drawing 1 (a) and (b), metallic film 1 two ends that are deposited on the polyimide matrix are clamped by little puller system dop 2 respectively, and little puller system dop 2 contacts electrical loading apparatus respectively toward external metallic film 1 both sides free end, to apply current load.
Embodiment 1:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt the magnetron sputtering deposition method with metal Cu thin film deposition on the polyimide flexible base, board, thickness of metal film 200 nanometers; Deposition process parameters is: sputtering power 120W; Sputtering bias-voltage-60V; Background air pressure 3.0 * 10
-3Pa; Operating air pressure (Ar) 0.1Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 1 * 10
3A/m
2The employing range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the variation of the relative changes delta of resistance test measuring apparatus metal thin film resistor with strain stress in the drawing process; The microstructure of observing metallic film in the drawing process by flying-spot microscope continuously changes, and draws micro-crack percentage f-strain stress curve.The anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack germinating strain stress
iResistance variations on resistance variations-strain curve is defined as critical crack expansion strain stress from linear stage to the strain of nonlinear phase changing moment
pSharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
cDetermine ε respectively by measuring curve
i=4.2%; ε
p=4.3%; ε
c=5.6%.
Embodiment 2:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt the magnetron sputtering deposition method with metal Cu thin film deposition on the polyimide flexible base, board, thickness of metal film 500 nanometers; Deposition process parameters is: sputtering power 180W; Sputtering bias-voltage-80V; Background air pressure 4.5 * 10
-3Pa; Operating air pressure (Ar) 0.3Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 2 * 10
3A/m
2The employing range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the variation of the relative changes delta of resistance test measuring apparatus metal thin film resistor with strain stress in the drawing process; The microstructure of observing metallic film in the drawing process by flying-spot microscope continuously changes, and draws micro-crack percentage f-strain stress curve.The anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack germinating strain stress
iResistance variations on resistance variations-strain curve is defined as critical crack expansion strain stress from linear stage to the strain of nonlinear phase changing moment
pSharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
cDetermine ε respectively by measuring curve
i=5.1%; ε
p=5.25%; ε
c=6.1%.
Embodiment 3:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt the magnetron sputtering deposition method with metal Cu thin film deposition on the polyimide flexible base, board, 10 microns of thickness of metal film; Deposition process parameters is: sputtering power 160W; Sputtering bias-voltage-70V; Background air pressure 4.0 * 10
-3Pa; Operating air pressure (Ar) 0.2Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 4 * 10
3A/m
2The employing range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the variation of the relative changes delta of resistance test measuring apparatus metal thin film resistor with strain stress in the drawing process; The microstructure of observing metallic film in the drawing process by flying-spot microscope continuously changes, and draws micro-crack percentage f-strain stress curve.The anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack germinating strain stress
iResistance variations on resistance variations-strain curve is defined as critical crack expansion strain stress x from linear stage to the strain of nonlinear phase changing moment; Sharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
cDetermine ε respectively by measuring curve
i=5.8%; ε
p=5.9%; ε
c=6.7%.
Embodiment 4:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt the magnetron sputtering deposition method with metal Cu thin film deposition on the polyimide flexible base, board, 20 microns of thickness of metal film; Deposition process parameters is: sputtering power 140W; Sputtering bias-voltage-75V; Background air pressure 3.0 * 10
-3Pa; Operating air pressure (Ar) 0.2Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 6 * 10
3A/m
2The employing range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the variation of the relative changes delta of resistance test measuring apparatus metal thin film resistor with strain stress in the drawing process; The microstructure of observing metallic film in the drawing process by flying-spot microscope continuously changes, and draws micro-crack percentage f-strain stress curve.The anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack germinating strain stress
iResistance variations on resistance variations-strain curve is defined as critical crack expansion strain stress from linear stage to the strain of nonlinear phase changing moment
pSharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
cDetermine ε respectively by measuring curve
i=6.2%; ε
p=6.3%; ε
c=7.1%.
Embodiment 5:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt the magnetron sputtering deposition method with metal Cu thin film deposition on the polyimide flexible base, board, thickness of metal film 700 nanometers; Deposition process parameters is: sputtering power 120W; Sputtering bias-voltage-70V; Background air pressure 3.0 * 10
-3Pa; Operating air pressure (Ar) 0.2Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 8 * 10
3A/m
2The employing range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the variation of the relative changes delta of resistance test measuring apparatus metal thin film resistor with strain stress in the drawing process; The microstructure of observing metallic film in the drawing process by flying-spot microscope continuously changes, and draws micro-crack percentage f-strain stress curve.The anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack germinating strain stress
iResistance variations on resistance variations-strain curve is defined as critical crack expansion strain stress from linear stage to the strain of nonlinear phase changing moment
pSharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
cDetermine ε respectively by measuring curve
i=6.6%; ε
p=6.8%; ε
c=7.9%.
Embodiment 6:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt the magnetron sputtering deposition method with metal Cu thin film deposition on the polyimide flexible base, board, thickness of metal film 500 nanometers; Deposition process parameters is: sputtering power 150W; Sputtering bias-voltage-65V; Background air pressure 3.5 * 10
-3Pa; Operating air pressure (Ar) 0.3Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 1 * 10
4A/m
2The employing range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the variation of the relative changes delta of resistance test measuring apparatus metal thin film resistor with strain stress in the drawing process; The microstructure of observing metallic film in the drawing process by flying-spot microscope continuously changes, and draws micro-crack percentage f-strain stress curve.The anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack germinating strain stress
iResistance variations on resistance variations-strain curve is defined as critical crack expansion strain stress from linear stage to the strain of nonlinear phase changing moment
pSharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
cDetermine ε respectively by measuring curve
i=6.9%; ε
p=7.0%; ε
c=8.7%.
Embodiment 7:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt the magnetron sputtering deposition method with metal A l thin film deposition on the polyimide flexible base, board, thickness of metal film 500 nanometers; Deposition process parameters is: sputtering power 120W; Sputtering bias-voltage-70V; Background air pressure 3.0 * 10
-3Pa; Operating air pressure (Ar) 0.2Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 1 * 10
4A/m
2The employing range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the variation of the relative changes delta of resistance test measuring apparatus metal thin film resistor with strain stress in the drawing process; The microstructure of observing metallic film in the drawing process by flying-spot microscope continuously changes, and draws micro-crack percentage f-strain stress curve.The anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack germinating strain stress
iResistance variations on resistance variations-strain curve is defined as critical crack expansion strain stress from linear stage to the strain of nonlinear phase changing moment
pSharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
cDetermine ε respectively by measuring curve
i=6.2%; ε
p=6.0%; ε
c=8.5%.
Embodiment 6:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt the magnetron sputtering deposition method with metal A g thin film deposition on the polyimide flexible base, board, thickness of metal film 500 nanometers; Deposition process parameters is: sputtering power 120W; Sputtering bias-voltage-70V; Background air pressure 3.0 * 10
-3Pa; Operating air pressure (Ar) 0.2Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 1 * 10
4A/m
2The employing range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the variation of the relative changes delta of resistance test measuring apparatus metal thin film resistor with strain stress in the drawing process; The microstructure of observing metallic film in the drawing process by flying-spot microscope continuously changes, and draws micro-crack percentage f-strain stress curve.The anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack germinating strain stress
iResistance variations on resistance variations-strain curve is defined as critical crack expansion strain stress from linear stage to the strain of nonlinear phase changing moment
pSharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
cDetermine ε respectively by measuring curve
i=7.1%; ε
p=7.3%; ε
c=8.9%.
Embodiment 6:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt the magnetron sputtering deposition method with metal Fe thin film deposition on the polyimide flexible base, board, thickness of metal film 500 nanometers; Deposition process parameters is: sputtering power 120W; Sputtering bias-voltage-70V; Background air pressure 3.0 * 10
-3Pa; Operating air pressure (Ar) 0.2Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 1 * 10
4A/m
2The employing range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the variation of the relative changes delta of resistance test measuring apparatus metal thin film resistor with strain stress in the drawing process; The microstructure of observing metallic film in the drawing process by flying-spot microscope continuously changes, and draws micro-crack percentage f-strain stress curve.The anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack germinating strain stress
iResistance variations on resistance variations-strain curve is defined as critical crack expansion strain stress from linear stage to the strain of nonlinear phase changing moment
pSharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
cDetermine ε respectively by measuring curve
i=6.7%; ε
p=6.8%; ε
c=8.2%.
Claims (1)
1, method for measuring several critical strain values of metal membrane at test current is characterized in that, may further comprise the steps:
(1) adopt the magnetron sputtering deposition method with deposit metal films on the polyimide flexible base, board, its elastic strain 〉=2%; Thickness of metal film 200 nanometers-20 micron; Deposition process parameters is: sputtering power 120-180W; Sputtering bias-voltage-60--80V; Background air pressure 3.0 * 10
-3-4.5 * 10
-3Pa; Operating air pressure Ar 0.1-0.3Pa;
(2) metallic film power on load to apply by range be that the constant current source of 12V acts directly on two free ends of metallic film and realizes that current density range is 1 * 10
3-1 * 10
4A/m
2
(3) adopting range is stress σ-strain stress curve that little puller system of 250N is measured metallic film in metallic film/flexible base, board system, adopts the relative changes delta of resistance test measuring apparatus metal thin film resistor=(R-R
0)/R
0, R wherein
0The resistance value of metallic film before being to stretch, R is the resistance value of metallic film in the drawing process) with the variation of strain stress in the drawing process; Promptly obtain ε
iAnd ε
c
(4) microstructure of observing metallic film in the drawing process continuously by flying-spot microscope changes, and draws the change curve of micro-crack percentage f with strain stress, promptly obtains ε
p
Wherein, resistance variations on resistance variations-strain curve is defined as critical crack germinating strain stress from linear stage to the strain of nonlinear phase changing moment
iThe anti-theoretical strain that pushes away when being zero of micro-crack percentage in micro-crack percentage-strain curve is defined as critical crack expansion strain stress
pSharp increase strain is constantly taken place in resistance on resistance variations-strain curve be defined as critical crack unstability strain stress
c
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101045791A CN100561209C (en) | 2006-09-15 | 2006-09-15 | Method for measuring several critical strain values of metal membrane at test current |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101045791A CN100561209C (en) | 2006-09-15 | 2006-09-15 | Method for measuring several critical strain values of metal membrane at test current |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1924563A true CN1924563A (en) | 2007-03-07 |
| CN100561209C CN100561209C (en) | 2009-11-18 |
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ID=37817290
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101045791A Expired - Fee Related CN100561209C (en) | 2006-09-15 | 2006-09-15 | Method for measuring several critical strain values of metal membrane at test current |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226163B (en) * | 2008-01-22 | 2010-11-10 | 西安交通大学 | Method for measuring metallic film fatigue life on a flexible substrate |
| CN101236189B (en) * | 2008-01-29 | 2012-01-04 | 西安交通大学 | Device and method for measuring metal film stress evolution when loading current |
| CN105466777A (en) * | 2015-12-14 | 2016-04-06 | 成都慧成科技有限责任公司 | Method for detecting pressure resistant performance of microporous film |
| CN109443932A (en) * | 2019-01-02 | 2019-03-08 | 西安建筑科技大学 | A kind of test device and operation method of film elongation strain |
| CN109632630A (en) * | 2017-10-09 | 2019-04-16 | 深圳先进技术研究院 | The test method and test equipment of battery pole piece adhesive force |
| CN110161081A (en) * | 2019-04-11 | 2019-08-23 | 浙江清华柔性电子技术研究院 | Conductive film bend resistance performance measurement method and measuring device |
| CN111351702A (en) * | 2020-03-19 | 2020-06-30 | 中国科学院金属研究所 | Method for determining fracture strain of flexible substrate metal film |
| CN113281165A (en) * | 2021-06-30 | 2021-08-20 | 燕山大学 | Limit test fixture and method for high-strength steel plate fracture in complex tension-compression path |
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- 2006-09-15 CN CNB2006101045791A patent/CN100561209C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226163B (en) * | 2008-01-22 | 2010-11-10 | 西安交通大学 | Method for measuring metallic film fatigue life on a flexible substrate |
| CN101236189B (en) * | 2008-01-29 | 2012-01-04 | 西安交通大学 | Device and method for measuring metal film stress evolution when loading current |
| CN105466777A (en) * | 2015-12-14 | 2016-04-06 | 成都慧成科技有限责任公司 | Method for detecting pressure resistant performance of microporous film |
| CN105466777B (en) * | 2015-12-14 | 2017-12-05 | 成都慧成科技有限责任公司 | A kind of method for detecting the pressure-resistant performance of microporous barrier |
| CN109632630A (en) * | 2017-10-09 | 2019-04-16 | 深圳先进技术研究院 | The test method and test equipment of battery pole piece adhesive force |
| CN109443932A (en) * | 2019-01-02 | 2019-03-08 | 西安建筑科技大学 | A kind of test device and operation method of film elongation strain |
| CN110161081A (en) * | 2019-04-11 | 2019-08-23 | 浙江清华柔性电子技术研究院 | Conductive film bend resistance performance measurement method and measuring device |
| CN111351702A (en) * | 2020-03-19 | 2020-06-30 | 中国科学院金属研究所 | Method for determining fracture strain of flexible substrate metal film |
| CN111351702B (en) * | 2020-03-19 | 2021-10-15 | 中国科学院金属研究所 | Method for determining fracture strain of flexible substrate metal film |
| CN113281165A (en) * | 2021-06-30 | 2021-08-20 | 燕山大学 | Limit test fixture and method for high-strength steel plate fracture in complex tension-compression path |
| CN113281165B (en) * | 2021-06-30 | 2022-09-06 | 燕山大学 | Limit test fixture and method for high-strength steel plate fracture in complex tension-compression path |
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