CN1897362A - Production of micro-connector and its terminal shape - Google Patents
Production of micro-connector and its terminal shape Download PDFInfo
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- CN1897362A CN1897362A CNA200510084259XA CN200510084259A CN1897362A CN 1897362 A CN1897362 A CN 1897362A CN A200510084259X A CNA200510084259X A CN A200510084259XA CN 200510084259 A CN200510084259 A CN 200510084259A CN 1897362 A CN1897362 A CN 1897362A
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Abstract
A minisize connector and the method of the terminal shape, the minisize connector includes: the base, the covering piece and the inserting piece, the base combine with the covering piece as the mother end, the inserting piece inserts between the base and the covering piece as the father end, reduces the distance of the terminal and the size of the whole body, provides the effects that are the low inserting force, the low static actuating force effect and the fixing inserting piece. The invention is: the anti-electromagnetic interference, the adjustable terminal impedance, the low cost.
Description
Technical field
The invention relates to a kind of electric connection technology, particularly about the method for making of a kind of micro connector and terminal shape thereof.
Background technology
The function of general common connector is to provide separable interface, connects subsystem, transmission signals or the power supply of electronic system inside.Because the application of connector for a long time, the quantity of relevant patent is quite huge, and for example United States Patent (USP) the 4th, 176, No. 900, the 4th, 330, No. 163, the 4th, 630, No. 874, the 4th, 636, No. 021, the 4th, 684, No. 194, the 5th, 092, No. 789, the 5th, 172, No. 050, No. the 6th, 817,776, patent and TaiWan, China patent of invention are announced No. 595826 and TaiWan, China utility model patent certificate M260896 case etc.
In order to keep stable contact interface when electronic system is moved, existing connector can produce forward contact force (Normal contact force) at contact interface.Yet, owing to the pin that designs on the connector that integrated circuit and printed circuit board (PCB) use now is more and more, can when assembling, produce high insertion force (Insertion force), as United States Patent (USP) the 4th, 176, No. 900 cases.And, in order to reduce insertion force, often must sacrifice the forward contact force; But when the forward contact force is not enough, just can improve contact impedance, cause the decay of signal bigger.Therefore, the someone design a kind of zero insertion force (Zero Insertion Force, connector ZIF), as United States Patent (USP) the 5th, 092, No. 789 cases.
United States Patent (USP) the 5th, 092, No. 789 case is provided with the lever that is connected between the seat of honour and following, just this lever is depressed after inserting central processing unit (CPU), this seat of honour is moved forward with respect to this following, make this slot of following seize the CPU pin on both sides by the arms so that positive force to be provided.But, though this connector wants to solve the contradiction that needs high forward contact force and low insertion force in the conventional art simultaneously, make and the metal terminal stamping technology but be limited by the traditional mechanical mould, minimum terminal pitch can only reach 0.3mm, can't do more microminiaturized design.
Can't do the problem that miniaturized design more causes to connector for solving above-mentioned classical production process, in the 365th page to the 376th page in the 13rd the 2nd chapter of MEMS (micro electro mechanical system) periodical (Journal of Micro electromechanical Systems) that people such as Michael P.Larsson and Richard R.A.Syms published in April, 2004, deliver separable electrical connector (Self-Aligning MEMS In-Line Separable Electrical Connector) in a kind of autoregistration microcomputer electric wire.Different with the connector of above-mentioned application conventional art manufacturing is that this connector is to utilize micro electronmechanical processing procedure to make, and has automatic aligning guide design.
But because the male and female terminal of above-mentioned connector can produce friction when inserting, the integrality in the time of not only can destroying signal and transmit, and be unfavorable for the design of the sub-connector of multiterminal.Simultaneously, this existing connector and no resistance (Impedance) matching Design can impact the frequency range that transmits signal.In addition, using the connector that this technology makes does not consider how to prevent and treat Electromagnetic Interference (Electro magnetic Interference EMI), causes the normal operation of other device of noise jamming that produces between device.And this existing connector does not design suitable holding structure yet, cause the male and female terminal can't be smoothly to inserting or to situations such as the termination contact after inserting are bad.Therefore, this existing connector effect that can provide also needs to improve.
Simultaneously, existing MEMS (micro electro mechanical system) (MEMS) assembly must be earlier through routing in conjunction with or the tin chou processing procedure such as close, with assembly with just can finish the assembly function test after detection clamp is connected, be every test suite once just must with routing in conjunction with or the mode package assembling that closes of tin chou once, not only can't repeat work (Rework), and the dependence test jig can't utilize again, so cause testing time and cost waste.In addition, above-mentioned prior art has high insertion force mostly, can cause wearing and tearing to terminal.And, may produce thermal effect because of high temperature in the processing procedure, be bent downwardly discharging female terminal structure terminal in season, can't finish the signal of telecommunication when inserting at the male and female terminal and connect; Perhaps, can make the female terminal warpage that makes progress, cause female terminal by bending damage (Kinking effect) when inserting at the male and female terminal.
Since above-mentioned prior art have high insertion force, overall dimensions excessive, be unfavorable for designing the sub-connector of multiterminal, no resistance matching Design, no Electromagnetic Interference control design and do not have holding structure design, therefore, how to solve the various shortcoming that prior art is derived, become present urgency problem to be solved in fact.
Summary of the invention
For overcoming the shortcoming of above-mentioned prior art, main purpose of the present invention is to provide a kind of method for making with micro connector and terminal shape thereof of low insertion force, reaches the effect of dwindling overall dimensions when dwindling terminal pitch.
Another object of the present invention is to provide a kind of method for making with micro connector and terminal shape thereof of low electrostatically actuated power.
A further object of the present invention is to provide a kind of method for making with micro connector and terminal shape thereof of the function of seizing on both sides by the arms.
Another purpose of the present invention is to provide a kind of method for making that has the electromagnetic interference prevention effect and can adjust the micro connector and the terminal shape thereof of terminal impedance.
Another purpose again of the present invention is to provide a kind of method for making that reduces the micro connector and the terminal shape thereof of manufacturing cost.
Of the present invention again again a purpose be to provide a kind of method for making of saving the micro connector and the terminal shape thereof of testing time and cost.
Of the present invention in addition again a purpose be to provide a kind of method for making with micro connector and terminal shape thereof of repetition ability to work.
Also another purpose of the present invention is to provide a kind of method for making that can improve the micro connector and the terminal shape thereof of design flexibility.
For reaching above-mentioned and other purpose, the invention provides the method for making of a kind of micro connector and terminal shape thereof.This micro connector comprises: base is provided with first conductive connection part and barb portion; Cover piece is located on this base, and forms first gap between this first conductive connection part and this barb portion; And insert, be plugged in this first gap, and fix, and be provided with second conductive connection part of corresponding this first conductive connection part of power supply property connection by this barb portion.
This base is to be made by silicon, and the end of this first conductive connection part and this barb portion is crooked arcuate structure up.This first conductive connection part is made of a plurality of female terminal.This barb portion is at least one shell fragment.This cover piece is provided with first recess, a plurality of second recess and the 3rd recess, wherein, this second recess is formed at this first recess bottom surface, this second recess is a plurality of potholes, and these a plurality of potholes are periodic arrangement, the cup depth of the 3rd recess makes between this cover piece and this first conductive connection part and this barb portion and also forms first gap greater than this first recess.This cover piece is the structure of being made by silicon.This cover piece also can be to should first clearance margin forming a chamfering.This second conductive connection part is made of a plurality of male terminal, and this cover piece combines as female end with this base, and this insert is a male end.Wherein, this connector is to utilize glue or adopt the combination of manufacture of semiconductor that this cover piece is combined with this base
The present invention also provides a kind of method that is used to make the terminal shape of above-mentioned micro connector, and this method comprises: this first conductive connection part and this barb portion form crooked arcuate structure up through plasma treatment.The step that this first conductive connection part and this barb portion are carried out plasma treatment then comprises: the light shield that is provided with opening is provided; This opening is aimed at the plasma treatment zone of this first conductive connection part and/or this barb portion; And this plasma treatment zone carried out plasma treatment.Wherein, be to carry out plasma treatment with ammonia or equivalent compound.
Prior art must be sacrificed the forward contact force in order to lower insertion force, make contact impedance improve, so that signal attenuation is bigger; The present invention can provide the base of low insertion force (Lower insertion force) and cover piece as female end, and can adopt low electrostatically actuated power, can not influence the forward contact force, and can improve density (High density) is set, more can be with vertical connection (Vertical connections) reduction means size.Therefore, except can solve in the prior art can't miniaturized design shortcoming, when dwindling terminal pitch, reach the effect of dwindling overall dimensions, this have the base of barb portion and this have recess and and base between form the gap designs such as cover piece also can provide respectively and seize function on both sides by the arms, control group (Impedance control) and control produce electromagnetic interference (EMIshielding), solved prior art no resistance matching Design, do not considered to prevent and treat Electromagnetic Interference and design frequency range that holding structure impacts is not arranged, produce noise jamming and cause public affairs, female terminal can't be smoothly to inserting or to situations such as the termination contact after inserting are bad.
Simultaneously, use the present invention and can before component package, test (Test) and pre-burning (Burn-in), solved prior art must with routing in conjunction with or the tin chou processing procedure such as close and carry out component package, just can finish System Functional Test and dependence test jig and can't utilize the waste testing time of causing and the shortcoming of cost again, the present invention also can needn't cancel when needs are changed any assembly whole system or platform only need to change this assembly and get final product.Therefore, the present invention can reduce manufacturing cost, can save testing time and cost, and has repetition ability to work (Ability of rework).
In addition, the present invention is not limited to solve the category of big capacity memory applications (Mass memoryapplications), connects (Chip connections) applicable to all chip types.And this base can be the structure of being made by silicon, and high heat-sinking capability (High-powerdissipation capability) and higher reliability (High reliability) are provided whereby.In addition, use the present invention and also can integrate other driving component (Passive components), controller (Controllers) and buffer (Buffers), can be widely used in industry, and flexible design and make relevant apparatus and platform according to demand.
So, the present invention can reach the effect of dwindling overall dimensions when dwindling terminal pitch, make the method for making of micro connector of the present invention and terminal shape thereof have low electrostatically actuated power, seize function on both sides by the arms, adjust impedance, prevent and treat the effect of electromagnetic interference, manufacturing cost be can reduce again and testing time and cost saved, has the repetition ability to work especially, solved the high insertion force that prior art exists, overall dimensions is excessive, be unfavorable for designing the sub-connector of multiterminal, the no resistance matching Design, the nonreactive Electromagnetic Interference, problems such as no holding structure and waste testing time and cost, the micro connector that effectively utilizes low insertion force and low electrostatic force to activate has improved product quality, has more the flexibility of design and can improve industrial utilization.
Description of drawings
Fig. 1 is the STRUCTURE DECOMPOSITION schematic diagram of micro connector embodiment 1 of the present invention;
Fig. 2 is the schematic diagram that relation is set between base among Fig. 1 and the cover piece;
Fig. 3 A and Fig. 3 B are the structural representations of cover piece among Fig. 1;
Fig. 3 C and Fig. 3 D are respectively the schematic diagrames that relation is set between this cover piece second recess and first recess and this base first conducting connecting part;
Fig. 4 is the structural representation of insert among Fig. 1;
Fig. 5 A to Fig. 5 P is the processing procedure schematic diagram of the terminal shape method for making of the micro connector among the embodiment 1;
Fig. 6 applies the schematic diagram that voltage produces the static braking;
Fig. 7 is that this insert has inserted the structural representation between this cover piece and this base;
Fig. 8 A and Fig. 8 B are the structural representations after the micro connector of Fig. 1 is assembled;
Fig. 9 is the processing procedure schematic diagram that carries out plasma treatment;
Figure 10 A and Figure 10 B are the experimental result schematic diagrames of Fig. 9 plasma treatment;
Figure 11 A to Figure 11 C is the structural representation of the different execution modes of base;
Figure 12 is the schematic diagram of drawing according to the embodiment of the invention 2;
Figure 13 A and Figure 13 B are the schematic diagrames of the application examples 1 of embodiment;
Figure 14 A and Figure 14 B are the schematic diagrames that application examples 2 of the present invention is drawn;
Figure 15 is the schematic diagram that application examples 3 according to the present invention is drawn;
Figure 16 A and Figure 16 B are the schematic diagrames of comparative example 1, show, compare the encapsulating structure of application examples 1 and application examples 2 prior aries;
Figure 17 is the schematic diagram of the application examples 4 of embodiment; And
Figure 18 A and Figure 18 B are the schematic diagrames of comparative example 2, demonstration, comparison application examples 4
The encapsulating structure of prior art.
Embodiment
Following embodiment further describes viewpoint of the present invention, but is not to limit category of the present invention anyways.
Embodiment 1
Fig. 1 to Figure 11 C is embodiment 1 drafting according to the method for making of micro connector of the present invention and terminal shape thereof.As shown in Figure 1, this micro connector 1 comprises base 11, cover piece 13 and insert 15.
This base 11 is provided with first conductive connection part 111 and barb portion 113.In present embodiment 1, this base 11 can be made by the material such as silicon, and this first conductive connection part 111 can be made of a plurality of female terminals, and 113 in this barb portion can for example be a shell fragment, and makes the end of this first conductive connection part 111 and this barb portion 113 be crooked arcuate structure up.The method for making that forms this first conductive connection part 111 and this barb portion 113 about this base 11 will be described in detail in the back.
As shown in Figure 2, this cover piece 13 is located on this base 11, and and this first conductive connection part 111 and this barb portion 113 between form a clearance G 1 (first gap), and this cover piece 13 also can be the structure of making by such as the material of silicon.Wherein, can utilize the combination of glue or employing manufacture of semiconductor, this cover piece 13 is interosculated with this base 11.
Shown in Fig. 3 A and Fig. 3 B, this cover piece 13 also is provided with first recess 131, a plurality of second recess 133 and the 3rd recess 135.This second recess 133 is formed on this first recess, 131 bottom surfaces, and shown in Fig. 3 C, this second recess 133 for example can be a plurality of potholes of periodic arrangement, except can increasing integrally-built rigidity, more can provide anti electromagnetic wave to disturb the effect of (EMI); Above-mentioned effect is based on photonic crystal energy gap (Photonic crystal band gap) theory, and for example United States Patent (USP) the 5th, 923, and No. 225 cases are about to this principle and are applied on the printed circuit board (PCB), so no longer describe.The cup depth of the 3rd recess 135 is then greater than this first recess 131, makes to form this clearance G 1 between this cover piece 13 and this first conductive connection part 111 and this barb portion 113, also can be used as insert 15 and base 11 simultaneously, the usefulness of location when cover piece 13 combines.Because this cover piece 13 is provided with this first recess 131, therefore, shown in Fig. 3 D, also forms a clearance G 2 (second gap) between this cover piece 13 and this first conductive connection part 111; Like this, just can by this clearance G 2 controls first conductive connection part 111 rear ends not with the impedance of second conductive connection part, 151 contact portions, the impedance matching before and after making.
This insert 15 is to plug to insert in this clearance G 1, and by these barb portion 113 fixing, location (being detailed later), and can design such as COMS circuit, MEMS assembly (Device) or other variation on this insert 15.As shown in Figure 4, this insert 15 is provided with second conductive connection part 151 that can corresponding electrically connect this first conductive connection part 111 and the recess 153 to should barb portion 113 being provided with.This second conductive connection part 151 can be made of a plurality of male terminals, and 113 in this barb portion can for example be the structure with trip function.Wherein, this cover piece 13 and this base 11 can be in conjunction with as female ends, and 15 of this inserts can be male end.
In present embodiment 1, this base 11 can be selected to be formed by for example processing procedure shown in Fig. 5 A to Fig. 5 P.But, owing to can form this first conductive connection part 111 and this barb portion 113 at this base 11 simultaneously, also can form this first conductive connection part 111 at this base 11 respectively, again this barb portion 113 is combined in this base 11, institute thinks simplifies accompanying drawing and makes explanation more succinct understandable, is described herein in this part that only should first conductive connection part 111 be formed on this base 11.
Shown in Fig. 5 A, a wafer 10 at first is provided, this wafer 10 can be such as the silicon on the insulating barrier (Silicon On Insular, SOI) wafer, and comprise silicon substrate 101, be located on this silicon substrate 101 and be silicon dioxide (SiO
2) insulating barrier 103 and be located at silicon layer 105 on this insulating barrier 103.Then, use light shield that this wafer 10 is carried out etching, shown in Fig. 5 B, expose outside the insulating barrier 103 of wafer 10 parts.Afterwards, shown in Fig. 5 C, utilize mode on this wafer 10, to form photoresist layer 20 such as rotary coating (Spincoating).Next, use light shield to carry out patterning process, shown in Fig. 5 D, only stay local photoresist layer 20 on these wafer 10 surfaces.Subsequently, on this wafer 10 and this photoresist layer 20, carry out for example sputter process, form the metal level 30 shown in Fig. 5 E.Then, lift off the metal level 30 on (Lift-off) this photoresist layer 20 and this photoresist layer 20, shown in Fig. 5 F, expose outside local wafer 10 surfaces, the promptly predetermined plasma treatment zone 107 that forms as first conductive connection part 111 of terminal.Afterwards, shown in Fig. 5 G, plasma treatment (Plasma treatment) is carried out in the plasma treatment zone 107 of this first conductive connection part 111, control the curvature in the plasma treatment zone 107 of this first conductive connection part 111.
Next, remove this metal level 30, shown in Fig. 5 H, expose outside this wafer 10 and this end 107.Subsequently, shown in Fig. 5 I, on this wafer 10 and this plasma treatment zone 107, form such as silicon nitride (Si in for example mode of deposition (Deposit)
xN
y) insulating barrier 40.Then, use light shield to carry out patterning process, remove the insulating barrier 40 of part silicon nitride, form the pattern 50 shown in Fig. 5 J.Afterwards, utilize mode again, be shown in as Fig. 5 K and form photoresist layer 60 on this pattern 50 such as rotary coating.Next, use light shield to carry out patterning process, shown in Fig. 5 L, remove local photoresist layer 60, expose outside local pattern 50.Subsequently, shown in Fig. 5 M, carry out for example sputter process, form metal level 70, cover this photoresist layer 60 and this pattern 50.Then, shown in Fig. 5 N, remove local metal level 70, expose outside pattern local among Fig. 5 L 50 part in addition.Afterwards, shown in Fig. 5 O, remove local this insulating barrier 103.At last, shown in Fig. 5 P, be coated with such as hydrogen peroxide (H in the part that removes local this insulating barrier 103
2O
2) or the insulating polymeric material of Parylene as insulating barrier 80, avoid short circuit.
Like this, just, can form as shown in Figure 2 this first conductive connection part 111 and the arcuate structure of these barb portion 113 endways bendings.
Because this base 11 is conductive layer (i.e. this silicon substrate 101 and silicon layer 105) up and down, the centre is insulating barrier (i.e. this insulating barrier 103), therefore, as shown in Figure 6, when applying voltage by upper and lower conductive layer, can produce electrostatically actuated (Electrostatic Actuation) power, terminal is fitted up and down.Therefore, just can make this first conductive connection part 111 and this barb portion 113 ends be bent downwardly respectively.Wherein,, just can produce actuation effect, so this electrostatically actuated power is low electrostatically actuated power so only need apply lower voltage because this first conductive connection part 111 and this barb portion 113 accepted plasma treatment respectively.At this moment, just this insert 15 can be inserted, and adopt sliding contact (Sliding contact), avoid in the prior art male and female terminal can produce abrasion (Wear) problem of frictional force when inserting, and can avoid Kinking effect.After inserting this insert 15, just can stop to apply voltage.So, as shown in Figure 7, the end of this first conductive connection part 111 and this barb portion 113 returns to original shape (position) respectively, this first conductive connection part 111 electrically connects with second conductive connection part 151 of this insert 15, and 113 in this barb portion can seize the recess 153 of this insert 15 on both sides by the arms.Just shown in Fig. 8 A and Fig. 8 B, this cover piece 13 is located on this base 11 after the assembling, and 15 of this inserts can low insertion force plug in the gap between this cover piece 13 and this base 11.
In the above description, the mode of carrying out plasma treatment can be provided with a light shield 21 as shown in Figure 9 on this first conductive connection part 111, and makes the opening 211 of this light shield 21 aim at the plasma treatment zone 107 of these first conductive connection parts 111, with such as ammonia (NH
3) or other equivalent compound plasma treatment is carried out in the plasma treatment zone 107 of this first conductive connection part 111, form needed shape whereby, i.e. the arcuate structure of endways bending.Similarly, when forming this barb portion 113, also plasma treatment is carried out in the plasma treatment zone that forms this barb portion 113, control the curvature of this barb portion 113.Simultaneously, in the experimental result shown in Figure 10 A and Figure 10 B, can select and be best suited for result of the present invention, for example the X among Figure 10 B
1=160 or 180.
Simultaneously, though the base 11 in the foregoing description 1 is to be that example describes so that two barb portions 113 to be set, but being not as limit, for example also can be the structure shown in Figure 11 A, Figure 11 B or Figure 11 C, makes base 11 ' and 11 " can possess flexibility in the design according to different needs.Wherein, can change the quantity that is provided with of this barb portion 113 by changing photomask structure, be not to be subjected to be provided with among the embodiment 1 two barb portions 113 to limit.
In addition, the actual number of various recesses described in the method for making of micro connector of the present invention and terminal shape thereof with the position is set, can design according to actual needs, be not with 1 described exceeding of the foregoing description; Processing mode of taking in the processing procedure and step also can be selected other equivalence techniques and order for use.
Embodiment 2
Figure 12 draws according to embodiments of the invention 2.Wherein, the assembly identical or approximate with the foregoing description 1 represent with identical or approximate element numbers, and omit detailed narration, makes the explanation of this case clearer understandable.
Different with the foregoing description 1 is that the cover piece 13 of present embodiment is should form a chamfering 137 in clearance G 1 edge 135 pairs of its 3rd recesses, makes this insert 15 be easier to insert between this cover piece 13 and this base 11.Certainly, have in the affiliated technical field and know the knowledgeable usually as can be known, the size of this chamfering 137 is not to exceed with described in the present embodiment.Insertion force is more reduced.
Application examples 1
Figure 13 A and Figure 13 B are that application examples 1 according to the present invention is drawn.Wherein, same as the previously described embodiments or approximate assembly is to represent with identical or approximate element numbers, and omits detailed narration, makes the explanation of this case clearer understandable.
As shown in FIG. 13A, different with the foregoing description is the terminal such as cmos circuit 90 can be inserted as the base 11 of female end and the gap location between the cover piece 13.Like this, this micro connector can be used as the application of integrated circuit three-dimension packaging, and the three-dimension packaging that can avoid tradition to utilize routing or tin chou to close mode can't repeat the shortcoming of work.
Simultaneously, shown in Figure 13 B, this base 11 and cover piece 13 exceed with Figure 13 A in that the assembling mode of this cmos circuit is also non-, can adjust as required or design.Therefore, this micro connector has more flexibility than prior art in design.
Hence one can see that, utilizes micro connector of the present invention can develop into the three-dimension packaging method that integrated circuit can repeat work.
Application examples 2
Figure 14 A and Figure 14 B are that application examples 2 according to the present invention is drawn.Wherein, same as the previously described embodiments or approximate assembly is to represent with identical or approximate element numbers, and omits detailed narration, makes the explanation of this case clearer understandable.
Shown in Figure 14 A, when micro connector of the present invention is applied in such as circuit board or silicon substrate surperficial, this insert 15 is with unsettled poor with its surface formation one little height, can increase whole height a little like this, and the existence of this difference in height may cause also insert 15 to cause flexural deformation because of being suspended state.Therefore, as shown in Figure 14B, can be arranged with a recess that is enough to hold this micro connector on the surface such as circuit board or silicon substrate, make this base 11 be arranged in this recess, 15 of this inserts keep flushing with the surface of circuit board.Like this, just, can reduce overall dimensions.Simultaneously, as shown in Figure 14B, when need storehouse multilayer micro connector, each layer micro connector also can keep flushing, and makes overall dimensions remain on minimum state.
Application examples 3
As shown in figure 15, can be with the gap location that inserts such as the terminal of MEMS actuator (Actuator) 92 as 13 of the base 11 of female end and cover pieces.Like this, when the MEMS actuator function is tested, do not need just can finish System Functional Test through encapsulation earlier as prior art, and this micro connector is reusable, unlike prior art, must scrap detection clamp, significantly reduce required testing time and the cost of prior art.
Hence one can see that, utilizes micro connector of the present invention can develop into MEMS module testing platform.Therefore, in the future as long as the electric connection pin potential energy and the micro connector compatibility of MEMS assembly must tentatively not encapsulate and can carry out the test of assembly correlated performance, and reusable this micro connector, significantly save testing time and cost.
Comparative example 1
Figure 16 A and Figure 16 B are the schematic diagrames of more above-mentioned application examples 1 and application examples 2, and wherein, Figure 16 A is the three-dimension packaging part (3D package) of the box-like encapsulation of tin chou, and Figure 16 B then is the three-dimension packaging part of the box-like encapsulation of thread tacking.
Compare with Figure 16 A and Figure 16 B, the three-dimension packaging part shown in Figure 13 A to Figure 14 B when need are changed wherein any assembly, can take out the assembly of required replacing easily except having more design flexibility; But the three-dimension packaging part of Figure 16 A and Figure 16 B then because of the reason of packaged type, can only all cancel, and can't repeat work.Therefore, use the present invention and can reduce manufacturing cost, and have the repetition ability to work.
Simultaneously, the three-dimension packaging part of Figure 16 A not only can't be changed assembly as required because cooperate the box-like packaged type of tin chou, therefore can only all cancel, and for cooperating packaged type to make overall dimensions bigger.But the present invention is the overall dimensions of reduction device relatively then, and only needs to change the assembly that wherein damages, and needn't all cancel.
In addition, be example with modal routing in conjunction with packaged type, the three-dimension packaging part of Figure 16 B uses the bonding wire (Wire) such as inductance, can produce higher noise at ground plane.Therefore, the integrality when transmitting for inhibit signal must increase other filtering unit in the bonding wire rear end and eliminate noise, also increases the area that assembly takies simultaneously.By contrast, the present invention then can accomplish impedance matching, does not need to use filtering unit, and then can omit and eliminate the required assembly of noise and dwindle the shared area of assembly, so can reduce cost relatively.
Application examples 4
Figure 17 is that application examples 4 according to the present invention is drawn.Wherein, same as the previously described embodiments or approximate assembly is to represent with identical or approximate element numbers, and narration no longer in detail, and only part is revised in explanation, makes the feature of this case clearer and more definite.
Improve multi-chip module (the Multi Chip Module that develops inadequately for solving one chip integrated level and function, MCM), now can combine with above-mentioned three-dimension packaging part, as shown in figure 17, base 11 of the present invention and cover piece 13 can be combined into the multi-chip module 100 of three-dimension packaging.
Comparative example 2
Figure 18 A and Figure 18 B are the schematic diagrames of more above-mentioned application examples 4, and wherein, Figure 18 A and Figure 18 B are the multi-chip modules of the box-like three-dimension packaging of thread tacking.
The three-dimension packaging part is following trend in conjunction with multi-chip module, at present still in the three-dimension packaging mode of the box-like encapsulation of tin chou, but compare with Figure 18 A and Figure 18 B, multi-chip module shown in Figure 11 is except can changing wherein any assembly as required, more can dwindle overall dimensions, and micro connector can take the micro electronmechanical batch of mode of production to make.Therefore, use the present invention and take faster mode to make, further reduce manufacturing cost, also can dwindle overall dimensions.
Compared with prior art, be to adopt low insertion force, contactless abrasion, also do not have the structure of Kinking effect between the male and female terminal of micro connector of the present invention.Simultaneously, because may command through the terminal shape of plasma treatment, only need use low electrostatically actuated voltage just can produce actuation effect.In addition, use the present invention and can suitably control positive force, do not need to sacrifice positive force and yield to low insertion force as prior art.And, the present invention utilizes the SOI wafer to carry out the method for making handling ease of control terminal shape, low cost of manufacture not only, more because the overall dimensions of connector is not subjected to the restriction of relevant processing procedure, dwindle overall dimensions when dwindling terminal pitch, accomplish more microminiaturized design, so avoided the shortcoming of prior art.
Moreover the present invention is provided with the barb portion with the function of seizing on both sides by the arms, can make the MEMS connector (Latchable MEMS connector) that can seize on both sides by the arms.Controllable impedance simultaneously, has certain interval between cover piece of the present invention and the terminal, so can be provided; And cover piece of the present invention also is provided with a plurality of recesses based on the photon crystal structure design, so EMI shielding (EMI Shielding) can be provided.In addition, micro connector of the present invention can be assembled (Easyassembly) easily, and use micro connector of the present invention and have flexibility (Design versatility) in many designs, more can change any member wherein as required, possess the ability of the work of repetition.
Claims (18)
1. a micro connector is characterized in that, this connector comprises:
Base is provided with first conductive connection part and barb portion;
Cover piece is located on this base, and forms first gap between this first conductive connection part and this barb portion; And
Insert is plugged in this first gap, and is fixed by this barb portion, and is provided with second conductive connection part of corresponding this first conductive connection part of power supply property connection.
2. micro connector as claimed in claim 1 is characterized in that this base is made by silicon.
3. micro connector as claimed in claim 1 is characterized in that, this first conductive connection part and this barb portion are crooked arcuate structure up.
4. micro connector as claimed in claim 1 is characterized in that, this first conductive connection part is to be made of a plurality of female terminals.
5. micro connector as claimed in claim 1 is characterized in that, this barb portion is at least one shell fragment.
6. micro connector as claimed in claim 1 is characterized in that, this cover piece is provided with first recess, a plurality of second recess and the 3rd recess.
7. micro connector as claimed in claim 6 is characterized in that, this second recess is formed at this first recess bottom surface.
8. micro connector as claimed in claim 6 is characterized in that, this second recess is a plurality of potholes.
9. micro connector as claimed in claim 8 is characterized in that, these a plurality of potholes are periodic arrangement.
10. micro connector as claimed in claim 6 is characterized in that, the cup depth of the 3rd recess makes between this cover piece and this first conductive connection part and this barb portion and also forms second gap greater than this first recess.
11. micro connector as claimed in claim 1 is characterized in that, this cover piece is also to should first clearance margin forming a chamfering.
12. micro connector as claimed in claim 1 is characterized in that, this cover piece is the structure of being made by silicon.
13. micro connector as claimed in claim 1 is characterized in that, this second conductive connection part is to be made of a plurality of male terminals.
14. micro connector as claimed in claim 1 is characterized in that, this cover piece combines as female end with this base, and this insert is a male end.
15. micro connector as claimed in claim 1 is characterized in that, this connector is to utilize glue or adopt the combination of manufacture of semiconductor that this cover piece is combined with this base.
16. a method for making that is used to make the terminal shape of micro connector as claimed in claim 3 is characterized in that, this first conductive connection part and this barb portion form crooked arcuate structure up through plasma treatment.
17. method for making as claimed in claim 16 is characterized in that, this first conductive connection part and this barb portion are carried out plasma treatment.
18. method for making as claimed in claim 16 is characterized in that, the step of this plasma treatment comprises:
The light shield that is provided with opening is provided;
This opening is aimed at the plasma treatment zone of this first conductive connection part and/or this barb portion; And
Plasma treatment is carried out in this plasma treatment zone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510084259XA CN100495828C (en) | 2005-07-15 | 2005-07-15 | Micro-connector and its terminal shape production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510084259XA CN100495828C (en) | 2005-07-15 | 2005-07-15 | Micro-connector and its terminal shape production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1897362A true CN1897362A (en) | 2007-01-17 |
| CN100495828C CN100495828C (en) | 2009-06-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200510084259XA Active CN100495828C (en) | 2005-07-15 | 2005-07-15 | Micro-connector and its terminal shape production method |
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| Country | Link |
|---|---|
| CN (1) | CN100495828C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101394036B (en) * | 2007-09-21 | 2010-12-15 | 财团法人工业技术研究院 | Micro connector and manufacturing method therefor |
| CN101414715B (en) * | 2007-10-19 | 2011-01-19 | 财团法人工业技术研究院 | Miniature connector and preparation method thereof |
| CN105265028B (en) * | 2013-07-02 | 2016-08-24 | 捷锐士阿希迈公司(以奥林巴斯美国外科技术名义) | Mixing interconnection |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI721881B (en) * | 2020-05-06 | 2021-03-11 | 技嘉科技股份有限公司 | Cable concentrator and electronic device having the same |
-
2005
- 2005-07-15 CN CNB200510084259XA patent/CN100495828C/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101394036B (en) * | 2007-09-21 | 2010-12-15 | 财团法人工业技术研究院 | Micro connector and manufacturing method therefor |
| CN101414715B (en) * | 2007-10-19 | 2011-01-19 | 财团法人工业技术研究院 | Miniature connector and preparation method thereof |
| CN105265028B (en) * | 2013-07-02 | 2016-08-24 | 捷锐士阿希迈公司(以奥林巴斯美国外科技术名义) | Mixing interconnection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100495828C (en) | 2009-06-03 |
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