CN1894438A - Method and system for forming a film of material using plasmon assisted chemical reactions - Google Patents
Method and system for forming a film of material using plasmon assisted chemical reactions Download PDFInfo
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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Abstract
The present disclosure methods and systems that provide heat, via at least Photon-Electron resonance, also known as excitation, of at least a particle utilized, at least in part, to initiate and/or drive at least one catalytic chemical reaction. In some implementations, the particles are structures or metallic structures, such as nanostructures. The one or more metallic structures are heat at least as a result of interaction of incident electromagnetic radiation, having particular frequencies and/or frequency ranges, with delocalized surface electrons of the one or more particles. This provides a control of catalytic chemical reactions, via spatial and temporal control of generated heat, on the scale of nanometers as well as a method by which catalytic chemical reaction temperatures are provided.
Description
The cross reference of related application
The application requires the right of priority of the U.S. Provisional Application No.60/529869 of the common transfer submitted on December 15th, 2003, and by reference it is incorporated into this.
Background of invention
The present invention relates to handle material particularly microstructure or nanostructure and application thereof.More specifically, the present invention uses deposition technique to form the method and the resulting structures of nanostructure and microstructure for various application widely provide.Only as example, such deposition technique can be used to form one or more and plant films in the manufacturing of the electron device of for example unicircuit.But will be appreciated that the present invention has purposes widely.The present invention can be used for etching, strengthens chemical reaction, or the like.In addition, the present invention can be used for comprising various fields such as life science, chemistry, petrochemical industry, electronics.
For many years, microelectronics has been penetrated into all respects of modern day life.In early days, RobertN.Noyce has invented unicircuit, and this describes in U.S. Patent No. 2981877 " SemiconductorDevice-and-Lead Structure " to some extent.Unicircuit develops into millions of even hundred million the assembly on the small pieces silicon materials of being assemblied in from the minority electrons element.Such unicircuit has been loaded into many conventional apparatus for example automobile, computer, medical facilities even toy for children, and it is controlled.
The performance of tradition unicircuit and complexity are considerably beyond people's the initial imagination.In order to improve complexity and current densities (that is, but on the given chip area packaged device quantity), the size of minimum device feature is also referred to as device " geometry ", and it is more and more littler to become along with the update of unicircuit.Increase current densities and not only improved the complexity and the performance of unicircuit, and concerning the human consumer, also reduced price.
The producing apparatus of unicircuit or chip can spend several hundred million even multi-million dollar.Each producing apparatus can be handled a certain amount of wafer, and each wafer has the unicircuit of some amount thereon.Therefore, diminish, can on each wafer, assemble more devices, thereby increase the output of producing apparatus by making the unicircuit individual devices.Make devices get smaller have very much a challenge, reason is that every kind of technology that integrated manufacturing is adopted all has the limit.That is to say that given technology only to effective on a certain characteristic dimension, then need change technology or device Butut to littler characteristic dimension usually.And, because there is technological limits in the more and more faster design of requirement on devices to specific traditional technology and material.
An example of such technology is chemical vapour deposition, is commonly referred to CVD.More specifically, CVD is considered to one of cheapest method of expense, and it is used for high throughput, high-quality thin film deposition that electronics, photoelectron and MEMS device are made.In traditional CVD reactor, for example, the precursor of vaporize contacts with hot substrate, causes deposition near this surface generation chemical reaction on hot substrate surface or very.Sedimental composition depends on precursor and reactor environment.For example, use the titanium precursor can on substrate, form metal titanium membrane, or in reactor, exist under the condition of suitable oxygen partial pressure, can form titanium oxide TiO
2Film.In order to form electronic circuit, CVD uses with photoetching process usually.For example, with CVD deposition material film.Etch structure by this film.But repeated deposition and etch process are to form complex construction.
Other CVD technology also is suggested.An example of these CVD technology is laser assisted CVDs.Heated traditional C VD is different with entire substrate, and laser assisted CVD (LCVD) uses laser focusing to come a bit carrying out local heating to appropriate C VD temperature of reaction on the substrate.Usually, laser-light spot size is number micron number magnitude.Because local heating, the response path in the steam is three-dimensional, and growth velocity is than the high several magnitude of traditional C VD.The typical growth speed of LCVD is the little meter per second of 5-20.Yet laser spots requires high-power laser source usually, and this makes that efficient is low and cost is high.By the focus of translation light beam, can mark line, point and bar.Although CVD and LCVD have obtained certain success, but still there are a lot of limitation.That is to say that the live width that these technologies obtain often can't be less than predetermined amount, i.e. the diffraction of light limit.In addition, the film quality variation with line widths shrink usually.These and other limitation will particularly hereinafter be described in this manual in more detail.
Find out by above-mentioned, need a kind of improvement technology of handling material.
Summary of the invention
According to the present invention, provide the technology that material particularly relates to microstructure or nanostructure and application thereof of handling that relates to.More specifically, the present invention uses deposition technique to form the method and the resulting structures of nanostructure and microstructure for various application widely provide.Only as example, such deposition technique can be used to form one or more and plant film in the manufacturing of electron device (for example unicircuit).But will be appreciated that the present invention has purposes widely.The present invention can be used for etching, strengthens chemical reaction, or the like.In addition, the present invention can be used for comprising various fields such as life science, chemistry, petrochemical industry, electronics.
We know that many material synthesis method need the energy of heat form usually.For instance, chemical vapour deposition is to be used for material synthetic routine techniques.Such method adopts the heat that is produced by the photoelectric interaction in nano-scale structure to be used as the thermal source of such chemical vapour deposition usually.Particularly, the electromagnetic radiation that the present invention includes the light form of using selected frequency and/or range of frequency is controlled and is used for the relative temperature of nano size particles of synthetic materials.Preferably, according to embodiment, the simple light source that the present invention also allows to use for example laser and traditional optical device is with the power density that is starkly lower than other technology heating arrangement optionally.In some embodiments, the present invention can carry out spatial control to the material building-up reactions on nanoscale.The present invention also can carry out the time control of high level to the temperature of synthesis technique.These and other characteristic will particularly hereinafter specifically describe in this manual.
In a kind of embodiment, the invention provides the method for using plasman assistant chemical vapor deposition or similar technology to form material membrane.This method comprises provides the substrate with surf zone.Preferably, substrate is (comprising multiwalled) such as Silicon Wafer, III/V family material, silicon-on-insulator, germanium, quartz, glass.This method comprise form one or more that be in above the part surface zone plant particles (for example, metal, semi-conductor, organically, isolator).Preferably, described one or more kind particles have thermal property, for example keep the ability of thermal gradient between particle itself and surrounding environment.According to embodiment, preferably, particle by plasman excite etc. the strong cartridge that becomes incident radiation (far be better than surrounding medium, thus particle than surrounding medium more consumingly with a certain amount of absorbing radiation).Therefore, particle is heated with respect to its environment.By particle and surrounding medium are used the next quantitatively stronger absorption of the Maxwell equation that determines the electromagnetic radiation behavior.Especially, with the Maxwell equation be applied to the scattering of small-particle can be at Mie find in the theoretical and expansion (according to embodiment, the term of clearly not narrating its expansion as herein described, Mie theory, to comprise its expansion), this theory can be used to describe the absorption of particle to electromagnetic energy.Also can be by spectrography to the measurement that experimentizes of this sorption.
This method is included in one or more adjacent domains of planting particle and (for example applies reactive materials, any reactive element or compound, gas, liquid, solid) and with the electromagnetic radiation with pre-selected frequency and/or range of frequency (for example, laser source, other energy source) to described one or more plant particles and shine.This method comprises that one or more that will have a thermal property by the described at least effect of electromagnetic radiation with pre-selected frequency plant the temperature of particles and rise to selected temperature (for example, temperature of reaction) at least.This method is planted the chemical reaction of inducing reaction property of the temperature material of particle owing to having improved one or more at least, forms material membrane thereby cause by reactive materials.In a kind of embodiment, term " particle " can form the structure that is pre-existing in definite space and geometric configuration, and we are called " pre-shape (pre-form) " according to embodiment.
In another kind of embodiment, the invention provides the another kind of method that causes chemical reaction with electromagnetic radiation.This method comprises provides one or more to plant particle.Preferably, described one or more kind particles have thermal property.This method is included in and applies reactive materials in one or more adjacent domains of planting particles and with the electromagnetic radiation with pre-selected frequency described one or more kind particles are shone.This method comprises that one or more that will have a thermal property by the described at least effect of electromagnetic radiation with pre-selected frequency plant the temperature of particles and rise to selected temperature at least, and, form material membrane by reactive materials thereby cause owing to having improved the chemical reaction that one or more plant inducing reaction property of the temperature material of particles at least.In a kind of embodiment, term " particle " can form the structure that is pre-existing in definite space and geometric configuration, and we are called " pre-shape " according to embodiment.
In another embodiment, the invention provides the method for handling material with chemical reaction.In a kind of embodiment, this method is come initiating chamical reaction by using electromagnetic radiation to add hot particle (for example, pre-shape), thereby the material deposition is provided.This method comprises that shining one or more with electromagnetic radiation source plants particle, and this electromagnetic radiation source has preset frequency.Thereby this method comprises the heat energy that makes one or more plant the part of particle and increases the local temperature of this part that improves one or more kind particles.The increase of heat energy is enough to cause the chemical reaction of one or more the kind materials in one or more adjacent domains of planting particle.In a kind of embodiment, term " particle " can form the structure that is pre-existing in definite space and geometric configuration, and we are called " pre-shape " according to embodiment.
In addition, the invention provides the method that forms material membrane with chemical vapour deposition.This method comprises provides the substrate that comprises at least a metal Nano structure pattern (for example, pre-shape), and this metal nano mechanism is made by selected material.This method comprises the plasmon resonance frequency of the selected material of determining nanostructure, and with the electromagnet source with preset frequency under the plasmon resonance frequency excitation portion selected material so that the heat energy increase of selected material.This method is included in and applies one or more kind precursors on the substrate that comprises the selected material that excites with the plasmon resonance frequency, and at selective deposition film to the small part selected material.
Depend on embodiment, the present invention also provides one or more following characteristics, and these particularly hereinafter have further description in this manual.
1. according to embodiment, the invention provides a kind of method, this method adopts the plasman in the metal Nano structure to excite as generating the means that local temperature distributes or causes the local heating that is enough to initiating chamical reaction.
2. according to embodiment, the plasman that the present invention also is included in the metal Nano structure excites the pre-shape that comprises the metal Nano structure on the substrate with local heating in the CVD reactor.Concise and to the point sequence of steps is as follows:
A. progressively form the template (we are called pre-shape) of metal Nano structure, the regular array of the gold particle that forms by any effective ways for example, method includes but not limited to the beamwriter lithography and the nanometer marking, perhaps provide on it and (for example formed the metallics pattern, regular array, random dispersion or arrange arbitrarily) substrate of (that is pre-shape).
B. at given material, at interval, size of particles etc., calculate plasma resonance frequency (for example, or range of frequency).
C. use the light source of suitable frequency scope to heat nanostructure.But this for example can be by making the inswept substrate in laser focusing source or realizing by the diffusing source that designs the whole metallicss of a kind of simultaneous excitation.
D. in the CVD reactor, carry out step (c) so that the precursor of vaporize contacts with hot substrate, and deposition obtains by the definite pattern of pre-shape.The material of actual deposition depends on precursor and other envrionment conditions.
3. according to another kind of embodiment, the present invention also comprises the CVD based on plasman that is used for the generating structure ferroelectric membranc.
4. specifically use (for example any CVD technology), compare with traditional C VD reactor and can carry out spatial control better.In addition, also can reach better technology controlling and process by the control light source, heat produces sooner, dissipates also sooner.According to embodiment, preferably, the mode that pre-shape produces heat effect is controlled the pattern deposition by the pattern and the electromagnetic radiation of following pre-shape.
Depend on embodiment, the present invention includes in these characteristics one or more.Obviously, those of ordinary skill in the art recognizes many variations, improvement and replacement.
Compare with conventional art, the present invention has lot of advantages.For example, present technique provides the wieldy technology that relies on conventional art.In some embodiments, this method provides higher device yield (in the tube core number of every wafer).In addition, the invention provides the technology compatible, and need not legacy equipment or technology are sexually revised as essence with conventional process techniques.Preferably, the present invention is for the integrated technology of improving that provides is provided under tens nanometer or littler design specifications.And, the invention provides optionally film forming, it is about below half micron or less than 1 nanometer that its live width depends on the embodiment scope.In addition, according to preferred embodiment, the present invention includes and to use method and the resulting structures of implanting (implant) than the stricter control of conventional process technology (for example traditional chemical vapour deposition).And, the method and the resulting structures that the invention provides wherein plasman auxiliary treatment atarting material film formation and the film of the last gained of pre-shape is controlled.According to embodiment, such film has similar or identical geometry with pre-shape and is used for exciting the electromagnetic radiation of pre-shape to provide by using to control seclected time.Depend on embodiment, can reach in these advantages one or more.These and other advantage particularly hereinafter has further description in this manual.
With reference to following detailed and accompanying drawing, can be familiar with other purpose of the present invention, characteristics and advantage more all sidedly.
Description of drawings
Fig. 1 is the simplified flow chart of the deposition method of one embodiment of the present invention;
Fig. 2-4 is the simplified cross-sectional view of the deposition method of one embodiment of the present invention;
Fig. 5 is the simplified flow chart of the another kind of deposition method of one embodiment of the present invention;
Fig. 6-8 is the simplified cross-sectional view of the another kind of deposition method of one embodiment of the present invention;
Fig. 9-11 is the reduced graph of the equipment of one embodiment of the present invention;
Figure 12-14 is the diagram of the technology relevant with the example of some embodiment of the present invention;
Figure 15-19 is the diagram of the technology relevant with the example of other embodiments of the present invention;
Figure 20 is the reduced graph of the relation of the golden nanometer particle delustring spectrum of a kind of embodiment of the present invention and energy.
Embodiment
The invention provides the technology that the technology of handling material particularly relates to microstructure or nanostructure and application thereof that relates to.More specifically, the present invention uses deposition technique to form the method and the resulting structures of nanostructure and microstructure for various application widely provide.Only as example, such deposition technique can be used to form one or more and plant films in the manufacturing of the electron device of for example unicircuit.But will be appreciated that the present invention has purposes widely.The present invention can be used for etching, strengthens chemical reaction, or the like.In addition, the present invention can be used for comprising various fields such as life science, chemistry, petrochemical industry, electronics.
Adopt the plasmon resonance frequency technology of one embodiment of the present invention to come the method for manufactured materials film to be summarized as follows:
1. the substrate with surf zone is provided;
2. on the part surface zone, form one or more and plant particle (having thermal property) (a kind of substrate is provided, and this substrate has (or embedding) on the part surface zone one or more plant particle (for example, pre-shape), replace above-mentioned steps 1 and 2);
3. in the adjacent domain of described one or more kind particles, apply reactive materials;
4. shine described one or more kind particles with electromagnetic radiation at selected area of space with pre-selected frequency;
5. the temperature of described one or more with thermal property being planted particle by the described at least effect of electromagnetic radiation with pre-selected frequency rises to selected temperature at least;
6. owing to the chemical reaction of inducing reaction property of the temperature material that has improved described one or more kind particles at least, form material membrane by reactive materials thereby cause; With
7. by required other step of carrying out.
The above-mentioned steps sequence provides the method according to the formation material membrane of one embodiment of the present invention.As mentioned above, this method has been used one group of step, comprises the method for utilizing electromagnetic radiation and one or more particles above the surf zone to form material membrane.Under the prerequisite that does not break away from claim scope of the present invention, can provide other alternative method by the order that increases step, removes one or more step or change one or more step.The further details of this method can particularly hereinafter find in this manual.
Fig. 1 is the simplified flow chart of the deposition method of one embodiment of the present invention.This schema only should not limit the scope of claim for diagram.Those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.Fig. 2-4 is the simplified cross-sectional view of the deposition method of one embodiment of the present invention.These figure are example only, and should not limit the scope of claim.Those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.As shown in the figure, this method starts from beginning (step 101), and this method provides uses plasman assistant chemical vapor deposition or similar technology to form the method for material membrane.
This method comprises provides substrate (step 103) 200, and this substrate has surf zone 201, as shown in Figure 2.Preferably, substrate is a Silicon Wafer.The substrate of other type comprises electro-conductive material, insulating material, other semiconductor material, multilayer material etc.Electro-conductive material can include but not limited to doped semiconductor materials, doped-glass, metal and other suitable material.Oxide compound or nitride or other material that insulating material includes but not limited to glass, quartz, pottery and has insulation characterisitic (for example, heat insulation characteristics, electrical insulation characteristics).Semiconductor material includes but not limited to silicon, germanium, III/V family element etc.Surf zone can be smooth, odd-shaped, or its combination.Surf zone can be patterning or do not have any pattern.Alternatively, this method remains on preset temperature with substrate.Preferably, preset temperature is lower than the temperature of reaction of described one or more kind particles and reactive materials, and this will be described in more detail below.Obviously, those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.
According to embodiment, this method is included in and forms (step 105) one or more kind particles 301 above the part surface zone and/or the metallics substrate is provided, and has the pre-shape of pre-shape and/or embedded part substrate on this substrate.Preferably, described one or more kind particles have thermal property, for example the chemical activation energy.Described one or more kind particles form the film of a kind of material or multiple material.Described one or more kind particles are as the precursor that forms material membrane.In a kind of embodiment, described one or more kind particles can be semiconductor material, insulating material, metal, organic materials, or its combination.Preferably, described one or more kind particles are metallic substance.Metallic substance can be selected from gold (Au), copper (Cu), silver (Ag), titanium (Ti), aluminium (Al), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), iron (Fe), tungsten (W), nickel (Ni), with listed other metal of periodictable, the arbitrary combination of above-mentioned metal etc.In a kind of embodiment, described one or more kind particles are characterised in that its length is extremely about 100 nanometers of 1 nanometer, but also can have other size.Described one or more kind particles also can comprise single-particle, multiparticle, particle beam (comprising silk) and combination thereof.Particle can form pattern or not have any pattern at substrate surface.Obviously, those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.
This method be included in described one or more plant in the adjacent domain of particles and apply reactive materials 303 (or step 107), as shown in Figure 3.Preferably, reactive materials is on particle membrane and be in contact with it.Reactive materials under given or chosen temperature with described one or more plant particle generation chemical reactions.This temperature be with described one or more plant the related activation energy of reacting phase between particles and the reactive materials.Activation energy is that initiation reaction forms the required least energy level of product (being material membrane) here.In an embodiment, reactive materials is gas form, liquid form, plasma body, solid form or its combination.Preferably, use electromagnetic energy to come initiation reaction, hereinafter this is described in detail.
Referring to Fig. 4, this method comprises that the feature of this electromagnetic radiation is the one or more frequencies with preliminary election with described one or more the kind particles of electromagnetic radiation irradiation 404 (step 111).Electromagnetic radiation can be from patterning (pattern) or flood (flood) source.Electromagnetic radiation can be derived from laser source, for example HeNe, argon, carbonic acid gas, any suitable lamp (flood or patterning), sun power etc.Preferably, depend on embodiment, the pre-selected frequency scope is that about 200nm is to about 30000nm.This method comprises that the temperature of described one or more with thermal property being planted particle by the described at least effect of electromagnetic radiation with pre-selected frequency rises to selected temperature (step 115) at least.In an embodiment, this influence is the resonance effect and/or the photoelectric interaction of described one or more kind particles, and this makes the heat energy of described one or more kind particles increase.Here, this method forms material membrane thereby cause by reactive materials owing to the chemical reaction (step 117) of inducing reaction property of the temperature material that has improved described one or more kind particles at least.One preferred embodiment in, the temperature of rising has caused reaction because with described one or more plant particles/or the area of space of pre-shape structurally associated in overcome the activation energy of reaction.According to an embodiment, other area of space beyond the pre-shape remains on below the activation energy, can not initiating chamical reaction, and this makes these zones not form any film.In a preferred implementation, the material membrane that present method forms has selected thickness.Depend on embodiment, can comprise other step (step 121).Present method stops in step 123.
The above-mentioned steps sequence provides the method according to the formation material membrane of one embodiment of the present invention.As mentioned above, this method has been used one group of step, comprises the method for utilizing electromagnetic radiation and one or more particles above the surf zone to form material membrane.Under the prerequisite that does not break away from claim scope of the present invention, can provide other alternative method by the order that increases step, removes one or more step or change one or more step.
Only as example, the invention provides the alternative that causes chemical reaction with electromagnetic radiation, this method is similar to above-mentioned embodiment to a certain extent.This method comprises provides one or more to plant particle, and preferably, described one or more kind particles have thermal property.Described one or more plant that particles can be on the substrate, in the substrate or in the fluid medium.Depend on embodiment, this fluid medium can be liquid, gas, steam, or its combination.Liquid can be organic liquid, petroleum base material, metal or water-based fluid (comprising pure water, salt etc.).Gas can be organic gas, petroleum base material, water material, non-reactive material, rare gas element (for example, nitrogen, argon gas), air (for example, oxygen, nitrogen), oxygen-enriched environment and combination thereof etc.Steam can be organic steam, petroleum-based fluids, water material, air, oxygen-enriched environment, inert environments, non-reacted environment and combination thereof etc.Obviously, also can be the arbitrary combination of above-mentioned substance, and other material.
Next, this method is included in described one or more adjacent domains of planting particles and applies reactive materials, and with described one or more the kind particles of the electromagnetic radiation irradiation with pre-selected frequency.This method comprises that the temperature of described one or more with thermal property being planted particle by the described at least effect of electromagnetic radiation with pre-selected frequency rises to selected temperature at least.This method comprises owing to the chemical reaction of inducing reaction property of the temperature material that has improved described one or more kind particles at least, forms material membrane thereby cause by reactive materials.Perhaps, can provide electromagnetic radiation to form to reactive materials with atarting material.Perhaps, depend on embodiment, can provide electromagnetic radiation to reactive materials and described one or more kind particles, to cause film forming.Obviously, those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.
The above-mentioned steps sequence provides the method according to the formation material membrane of one embodiment of the present invention.As mentioned above, this method has been used one group of step, comprise utilize electromagnetic radiation and above the surf zone or one or more particles in fluid, solid or its combination form the method for material membrane.Under the prerequisite that does not break away from claim scope of the present invention, can provide other alternative method by the order that increases step, removes one or more step or change one or more step.Other method according to embodiment of the present invention particularly hereinafter is provided in this specification sheets.
The method that the chemical vapour deposition of employing one embodiment of the present invention forms material membrane can be summarized as follows:
1. the substrate that comprises at least a metal Nano structure pattern is provided, and wherein nanostructure is made by selected material;
2. determine the plasmon resonance frequency of the selected materials of nanostructure;
3. with electromagnet source excitation portion selected material under the plasmon resonance frequency with preset frequency;
4. the heat energy of selected material is increased;
5. one or more being planted precursor is applied to above the substrate that is included in the selected material that excites under the plasmon resonance frequency;
6. to the small part selected material, causing optionally film deposition; With
7. by required other step of carrying out.
The above-mentioned steps sequence provides a kind of method according to the embodiment of the present invention.Under the prerequisite that does not break away from claim scope of the present invention, can provide other alternative method by the order that increases step, removes one or more step or change one or more step.The further details of this method can particularly hereinafter find in this manual.
Fig. 5 is the simplified flow chart of the another kind of deposition method of one embodiment of the present invention.This schema only should not limit the scope of claim for diagram.Those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.Fig. 6-8 is the simplified cross-sectional view of the another kind of deposition method of one embodiment of the present invention.These figure are example only, and should not limit the scope of claim.Those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.Shown in the simplified flow chart of Fig. 5, this method 500 provides uses chemical vapour deposition to form the method for material membrane, and it starts from beginning (step 501).
The pattern 603 that provides substrate 601 (step 503), this substrate to comprise at least a metal Nano structure of being made by selected material is provided this method.Preferably, substrate is a Silicon Wafer.The substrate of other type comprises electro-conductive material, insulating material, other semiconductor material, multilayer material etc.Electro-conductive material can include but not limited to those materials that this paper mentions, and the material beyond this specification sheets.Insulating material includes but not limited to those materials that this paper mentions, and the material beyond this specification sheets.Semiconductor material can comprise silicon, germanium, any III/V family's material and combination thereof etc., and other material of mentioning of this paper.Metallic substance can be selected from gold (Au), copper (Cu), silver (Ag), titanium (Ti), aluminium (Al), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), iron (Fe), tungsten (W), nickel (Ni) and listed other metal of periodictable and combination thereof etc.In a kind of embodiment, the patterning nanostructure is characterised in that its length is extremely about 100 nanometers of 1 nanometer, but also can have other size.Alternatively, this method remains on preset temperature with substrate and patterning nanostructure.Preferably, preset temperature is lower than the temperature of reaction of patterning nanostructure and reactive materials, and this will be described in more detail below.Obviously, those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.
This method comprises the plasmon resonance frequency (step 505) of the selected materials of determining nanostructure.In a kind of embodiment, the plasmon resonance frequency is the frequency of conduction electrons collective oscillation.As example, if the light property of known particle and surrounding medium then can obtain the plasmon resonance frequency by the Mie theory.For complex construction, also must know the geometrical shape and/or the arrangement mode of particle.Also can come measuring plasmon resonance frequency by spectrographic technique.Obviously, those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.And, should be to the explanation that is defined as the restriction scope of the invention herein.
Next, shown in the reduced graph of Fig. 7, this method comprises with the electromagnet source 701 excitation portion selected material (step 507) under the plasmon resonance frequency with preset frequency.Electromagnetic radiation can be from patterning or flood source.Electromagnetic radiation can get self-excitation light source, for example HeNe, Ar
++Or laser diode, or the like.Preferably, depend on embodiment, the scope of pre-selected frequency is that about 200nm is to about 30000nm.Should be noted that with respect to pulse laser continuous output laser (CW) is preferred.Obviously, can there be other variation, improvement and replacement.
This method comprises that the heat energy that makes selected material increases (step 509), and this electromagnetic energy with selected frequency is relevant.Heat energy is relevant with the activation energy of selected material and one or more kind precursors.Preferably, also the specific temperature of reaction with selected material and one or more kind precursor formation material membranes is relevant for heat energy.As will be described below, this method comprises that one or more are planted precursor 703 is applied to above the substrate that is included in the selected material that excites under the plasmon resonance frequency (step 511), thereby at selective deposition film 801 (step 513) to the small part selected material.Depend on embodiment, also can comprise other step.This method stops in step 515.Obviously, can there be other variation, improvement and replacement.
The above-mentioned steps sequence provides the method according to the formation material membrane of one embodiment of the present invention.As mentioned above, this method has been used one group of step, comprises the method for utilizing electromagnetic radiation and the predefine pattern metal nanostructure above the substrate to form material membrane.Under the prerequisite that does not break away from claim scope of the present invention, can provide other alternative method by the order that increases step, removes one or more step or change one or more step.
Only, the invention provides other method of handling material membrane as example.This method comprises that shining one or more with electromagnetic radiation source plants particle, and this electromagnetic radiation source has preset frequency.This method comprises that the heat energy that makes one or more kind particles of part increases the local temperature with one or more the kind particles of described part that raise.The increase of heat energy is enough to cause the chemical reaction of one or more materials in the adjacent domain of one or more kind particles of described part.Obviously, can there be other variation, improvement and replacement.
The above-mentioned steps sequence provides a kind of method according to the embodiment of the present invention.Under the prerequisite that does not break away from claim scope of the present invention, can provide other alternative method by the order that increases step, removes one or more step or change one or more step.Can particularly hereinafter find in this manual about further details according to the system of one embodiment of the present invention.
Fig. 9-11 is the reduced graph of the equipment of one embodiment of the present invention.These figure are example only, and should not limit the scope of claim of the present invention.Those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.Referring to Fig. 9,, the invention provides the equipment 900 of handling substrate according to one embodiment of the present invention.As shown in the figure, this equipment comprises sample table 901, and sample is arranged on it.Depend on embodiment, sample table is generally x-y platform and/or x-y-z platform.Sample table remains in the chamber 903.Depend on embodiment, this chamber can be connected with vacuum pump 905 to produce vacuum environment.Perhaps, depend on embodiment, this chamber can remain barometric point or high pressure, or its combination.
According to embodiment, this equipment comprises electromagnetic radiation source, and for example laser source 909.Depend on embodiment, laser source can be argon, helium, carbonic acid gas and other source (comprising non-laser source), or its combination.Laser source is connected to polarizer 911, and this polarizer 911 is connected to optical gate 913, and optical gate 913 mechanically or optical mode stops laser beam and/or allow laser beam to pass arrives mirror 915.Depend on embodiment, this mirror carries out certain adjustment to laser beam.Depend on embodiment, laser beam passes microscope 917 and focuses to certain part of certain feature of sample by collimator 921.
In a kind of embodiment, microscope is connected to image capture device 919.Depend on embodiment, this image capture device is preferably charge coupled device (CCD) photographic camera etc.In a kind of embodiment, the CCD photographic camera comprises at least 160 * 120 pixel or more, to obtain high resolving power.According to embodiment, the CCD photographic camera is connected to the video monitor 923 that comprises demonstration and calculating device.According to embodiment, also show computer system 1010, it is used for equipment is monitored.
According to one embodiment of the present invention, Figure 10 is the reduced graph of computer system 1010 that is used to monitor the system of Fig. 9.This figure is an example only, and should not limit the scope of claim of the present invention.Those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.As shown in the figure, computer system 1010 comprises display unit 1020, display screen 1030, cabinet 1040, keyboard 1050, scanner and mouse 1070.Mouse 1070 and keyboard 1050 representatives " user input apparatus ".Mouse 1070 comprises button 1080, is used to select the button on the graphical user interface device.The example of other user input apparatus is touch-screen, light pen, spike ball, data glove, microphone or the like.
This system only represents and realizes a type systematic of the present invention.The system of many other types and configuration is applicable to the present invention, and this is conspicuous to those skilled in the art.In a kind of preferred implementation, computer system 1010 comprises based on Pentium
TMComputer, the Windows of operation Microsoft company
TMNT or XP operating system.Yet without departing from the scope of the invention, those of ordinary skill in the art can make this system be applicable to other operating system and framework easily.As noted, mouse 1070 can have one or more button, and for example button 1080.Adorn common computer module in the cabinet 1040, for example disc driver, treater, storing device etc.Storing device includes but not limited to disc driver, tape, solid-state memory, magnetic bubble memory etc.Cabinet 1040 can comprise additional firmware, and for example I/O (I/O) interface card is used for computer system 1010 is linked to each other with external device (ED), external memory storage, other computer or add-on peripheral device, and this further describes hereinafter.
According to one embodiment of the present invention, Figure 11 is the detail drawing of the hardware element of computer system shown in Figure 10.This figure is an example only, and should not limit the scope of claim of the present invention.Those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.As shown in the figure, comprise basic subsystem in the computer system 1010.In embodiment, interconnect by system bus 1075 between the subsystem.Also show add-on subsystem among the figure, for example printer 1074, keyboard 1078, fixed disk, watch-dog 1076 of linking to each other with display adapter 1082 etc.Peripheral unit can be connected with computer system by any means known in the art (for example serial port 1077) with I/O (I/O) device (it is connected to I/O controller 1071).For example, serial port 1077 can be used for computer system is linked to each other with modulator-demodulator unit 1081 (linking to each other by its Wide area network with for example Internet), mouse input device or scanner.Interconnection by system bus allows central processing unit 1073 and each subsystem to communicate, and control is from the execution of the instruction of system memory 1072 or fixed disk 1079 and the message exchange between the subsystem.Those of ordinary skill in the art can easily realize interconnecting and other layout of subsystem.System memory and fixed disk are the examples of the tangible medium of storage computer program, and the tangible medium of other type comprises floppy disk, portable hard drive, optical storage media (for example CD-ROM and barcode), semiconductor memory (for example flash memory), read-only storage (ROM) and powered battery storer.
In a kind of preferred implementation, the invention provides the system that forms material membrane with chemical vapour deposition or other technology (for example etching etc.).This system has one or more storer, has the various computer codes of realizing function described herein in the storer.This system has and is used for and will comprises the substrate transport of pattern of at least a metal Nano structure that contains selected material to indoor code.This system has and is used for having the selected material of electromagnet source excitation portion under the plasmon resonance frequency of selected material of preset frequency so that the code that this selected material heat energy increases by use.This system also has following code: is used for applying one or more above the substrate of the selected material that under being included in the plasmon resonance frequency, excites and plants precursors, thus selective deposition film and keep other zone of substrate not deposit simultaneously on described part selected material only.Depend on embodiment, can have other variation, improvement and replacement.
Though above be illustrated, will be appreciated that to have many variations, replacement and improvement with the particular hardware feature.For example, any hardware characteristics can further be made up or be separated.These features can partly realize with combining of software by software or hardware.Depend on concrete application, hardware and software can be by further integrated or less integrated.
Embodiment:
In order to verify principle of the present invention and operation, we provide embodiments of the invention with the chemical vapour deposition environment.These embodiment only are illustrative, and should not limit the scope of claim.Those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.Information as a setting, we provide about the traditional chemical vapour deposition relevant with method and system of the present invention and the information of application thereof.One of purpose of this CVD research is that nanostructure is carried out part control.It is unusual ideal that ferroelectric material is used for nonvolatile memory.Yet, have challenge aspect the manufacturing ferroelectric material even size array.Traditional C VD only provides random deposition technology, thereby has limitation.
In the present embodiment, the local heating of metal Nano structure in the CVD environment (for example particle on the substrate, line or its array) resonates by activated plasma oscillator in these structures and causes, rather than as coming the local heating substrate by laser focusing among the LCVD.When the delocalized electron in light wave and the metal interacts, produce plasmon resonance, and under resonant frequency, the major portion of light projectile energy is absorbed by particle and causes heating.Can reach the temperature that is suitable for the CVD growth with medium light intensity.
Figure 12 is the synoptic diagram of this technology: in the CVD environment, and activated plasma oscillator resonance in the metal nano particles array (redness) of incident light (green arrow) on substrate.Particle is heated, and deposition (sap green) only takes place adding on the hot particle.(Figure 12 bottom is an enlarged view.) as shown in Figure 3, also can go up growth in the 3-dimensional metal structure (for example coiling) of complexity.Using the metal lower layer structure is favourable to ferroelectrics, and reason is that lower metal can serve as necessary electrode.As Figure 14, can be in not carrying out etched single growth technique deposited capacitances device device (metal-dielectric medium-metal).The embodiment of other method of the present invention sees below.
In another embodiment, we have formed various nanostructures with chemical vapour deposition technique.We confirmed directly 10,20 and 40nm Au nanoparticle on depositing Ti O
2CVD.Obviously, can there be other variation, improvement and replacement.
As far as we know, this is first the plasman heating to be applied to CVD, and we have adopted plasman assisted CVD (plasmon assisted CVD, title PACVD).Be used for sedimentary laser power density than low several orders of magnitude of conventional laser assisted CVD.Diameter be 10,20 and the nanoparticle of 40nm from solution deposition to Silicon Wafer, Figure 15 is the SEM image of sedimentary particle.Deposition is at random, and settled density is about 100 particles/μ m
2
These wafers are placed miniature CVD reactor, and reactor can also can be other reactor as above-mentioned.Precursor is Ti[(OCH (CH
3)
2)
2[C
11H
19O
2]
2, the reason of selecting it is its vapour pressure height at a lower temperature.The plasmon resonance frequency of 20nm Au particle is 640nm on the Silicon Wafer.(should be noted that and do not remove original SiO
2Thin layer.) with the micro objective of 10X HeNe laser beam (632nm) is focused to spot size near 10 μ m.Sample unit is installed on the computer-controlled XY translation stage.Make laser power in 10 to 100/AW, change by the rotation polarizer of regulating on the light path.The electronics optical gate also is set with the control exposure on light path.The LabView program is used for control position, exposure and laser power, and record bubbler and cell temperature and cell pressure.Time shutter that is used to write by prolongation and increase the grid that laser power forms 500 exposure areas by the top end of to.Precursor Ti[(OCH (CH
3)
2)
2[C
11H
19O
2]
2Take from the LCVD document with the dividing potential drop of oxygen.Bubbler is remained on 130 ℃, and a small amount of Ar flows so that the pressure in this unit reaches 1.5 millibars (mbar).O
2Stream increases to 2.0mbar with cell pressure.Sedimental size depends on size of particles, power and exposure and changes.Sedimental size range is that micron is to nanometer scale.Figure 16 is the sedimental SEM image of sedimentary micron-scale for the first time on 20nm Au particle.The exposure and the power of this settling array are higher, and the micron-scale feature is rational.Light beam spot is about 10 μ m, TiO
2Absorption under 632nm can be ignored, and it has high thermal conductivity.Raman spectrum shows that a lot of features are actually the TiO with anatase octahedrite or rutile form
2, and some settling comprises TiO
2Mixture with the unreacted precursor.In this sample, we find that settling is the bar of diameter 10 μ m, height 40 μ m.Figure 17 shows the nanoscale settling made from lower power and exposure on similar 20nm particle.Figure 18 shows the nanoscale settling on the 40nm Au particle.Figure 19 shows the nanoscale settling of certain limit on the 10nm Au particle.Therefore, we verify certain methods according to the foregoing description of embodiment of the present invention by using.These embodiment only are illustrative, and should not limit the scope of claim.Those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.
Depend on embodiment, because specific interaction, heating effect can be significant.Compare with massive structure, the heating effect that is caused by the photoelectric interaction in the nanoparticle is significant.The temperature of metal is relevant with the mean kinetic energy of conduction electrons, and incidence electromagnetic radiation can cause the electronic oscillation in zone, metallic surface, thereby improves mean kinetic energy.The kinetic energy of surface electronic finally passes to electronics (main body electronics) beyond the surface with to a certain degree random fashion.This is the basis of radiation heating.Yet if electromagnetic radiation is under the plasmon resonance frequency, surface electronic generation collective oscillation or resonance, heating will be maximized.Can't in the main body electronics of decision macrostructure, excite such resonance.Although the light of off-resonance frequency can cause heating, not as using the heating efficiency height of resonant frequency.
Along with scantlings of the structure reduces, specific surface area improves, and specific surface area is proportional to 1/R, and wherein R is the radius of particle.Especially, nanoparticle is because the specific surface area height has more substantial surface electronic with respect to the main body electronics.It has been generally acknowledged that this makes electromagnetic radiation can heat nanoparticle expeditiously under the plasmon resonance frequency.
In order to explain the influence of plasma resonance, we provide the delustring spectrum of golden nanometer particle, and this can support our discovery.Figure 20 is the reduced graph of the relation of the golden nanometer particle delustring spectrum of a kind of embodiment of the present invention and energy.This figure only is illustrative, and should not limit the scope of claim.Those of ordinary skill in the art will be appreciated that a lot of variations, improvement and replacement.Single particle, spherical cluster are drawn the relation curve of dullness and energy, and employing comprises that the Mie theory of multipole (L＜=10) calculates.As can be seen, the dullness of near-resonance has almost improved an order of magnitude.Dullness has been considered the absorption and the scattering of light.No matter how to distribute in scattering and between absorbing, heat energy is maximum under resonant frequency, and this has supported our discovery.Exist such mechanism though we think, depend on embodiment, can also have other variation, improvement and replacement.
In addition, above-mentioned preferred implementation also can be used other technology at deposition.For example, the present invention can be used for etch layer, and this layer is to go up sedimentary by traditional C VD (or plasman assisted CVD as herein described) pre-shape (particle is by the substrate of required pattern distribution on it).In a kind of embodiment, after deposition is treated etched layer, can cause that in the adjacent domain of pre-shape particle local temperature (and/or electric field) raises with the present invention, this makes settled layer be removed in the particle adjacent domain by fusing, distillation or other physical action.Obviously, can there be other variation, improvement and replacement.
It is also understood that embodiment as herein described and embodiment only are the illustrative purpose.As mentioned above, according to embodiment, direct depositional texture film under space scale that the present invention can provide at the geometric properties by pre-shape and the characteristic.According to embodiment, though described deposition, also can provide the chemical reaction of other form, use technology of the present invention optionally to improve the temperature of particle and/or pre-shape structure.Various according to improvement of the present invention with change and will be given those skilled in the art by hint, and will be comprised in the scope of the application's spirit and claims.
Claims (63)
1. form the method for material membrane with the plasman assistant chemical vapor deposition, described method comprises:
The substrate that comprises surf zone is provided;
Form one or more and plant particle on the described surf zone of part, described one or more kind particles have thermal property;
In the adjacent domain of described one or more kind particles, apply reactive materials;
With described one or more the kind particles of electromagnetic radiation irradiation, described electromagnetic radiation has pre-selected frequency;
The temperature of described one or more with thermal property being planted particle by the described at least effect of electromagnetic radiation with described pre-selected frequency rises to selected temperature at least;
By improving the chemical reaction that described one or more temperature of planting particles cause described reactive materials at least, form material membrane by described reactive materials thereby cause.
2. method as claimed in claim 1, wherein said one or more kind particles comprise metallic substance.
3. method as claimed in claim 2, wherein said metallic substance is selected from gold, copper, silver, titanium, aluminium, Ni, Pd, Pt, Rh, Ir and Fe.
4. method as claimed in claim 1, wherein said influence are the resonance effect of described one or more kind particles, and described resonance effect causes the heat energy of described one or more kind particles to increase.
5. method as claimed in claim 1, wherein said electromagnetic radiation comes self-excitation light source.
6. method as claimed in claim 1, the scope of wherein said pre-selected frequency are that about 200 nanometers are to about 30000 nanometers.
7. method as claimed in claim 1, wherein said surface comprises material.
8. method as claimed in claim 1, the feature of wherein said one or more kind particles are that length is that 1 nanometer is to about 100 nanometers.
9. method as claimed in claim 1, wherein said chemical reaction is caused by preset temperature.
10. method as claimed in claim 1, wherein said reactive materials contacts with described one or more kind particles.
11. method as claimed in claim 1, wherein said surf zone comprise the pattern that is formed by described one or more kind particles, described pattern is a feature with pre-shape structure, and described pre-shape structure is on described substrate or embeds in it.
12. method as claimed in claim 1 also comprises forming the described material membrane with selected thickness.
13. method as claimed in claim 1, wherein said reactive materials are gas form.
14. method as claimed in claim 1, wherein said reactive materials are liquid form.
15. method as claimed in claim 1, wherein said reactive materials are plasma body.
16. method as claimed in claim 1, wherein said reactive materials are solid form.
17. method as claimed in claim 1 also comprises described substrate is remained on preset temperature.
18. method as claimed in claim 1, wherein said selected temperature are the temperature of reaction of described reactive materials.
19. cause that with electromagnetic radiation chemical reaction forms the method for material membrane, described method comprises:
Provide one or more to plant particle, described one or more kind particles have thermal property;
In the adjacent domain of described one or more kind particles, apply reactive materials;
With described one or more the kind particles of electromagnetic radiation irradiation, described electromagnetic radiation has pre-selected frequency;
The temperature of described one or more with thermal property being planted particle by the described at least effect of electromagnetic radiation with described pre-selected frequency rises to selected temperature at least;
By improving the chemical reaction that described one or more temperature of planting particles cause described reactive materials at least, form material membrane by described reactive materials thereby cause.
20. as the method for claim 19, wherein said one or more kind particles comprise metallic substance.
21. as the method for claim 20, wherein said metallic substance is selected from gold, copper, silver, titanium, aluminium, Ni, Pd, Pt, Rh, Ir and Fe.
22. as the method for claim 19, wherein said influence is the resonance effect of described one or more kind particles, described resonance effect causes the heat energy of described one or more kind particles to increase.
23. as the method for claim 19, wherein said electromagnetic radiation comes self-excitation light source.
24. as the method for claim 19, the scope of wherein said pre-selected frequency is that about 200 nanometers are to about 30000 nanometers.
25., wherein described one or more kind particles are provided on the substrate surface area as the method for claim 19.
26. as the method for claim 19, the feature of wherein said one or more kind particles is that length is that 1 nanometer is to about 100 nanometers.
27. as the method for claim 19, wherein said chemical reaction causes under described preset temperature.
28. as the method for claim 19, wherein said reactive materials contacts with described one or more kind particles.
29., also comprise forming described material membrane with selected thickness as the method for claim 19.
30. as the method for claim 19, wherein said reactive materials is a gas form.
31. as the method for claim 19, wherein said reactive materials is a liquid form.
32. as the method for claim 19, wherein said reactive materials is a plasma body.
33. as the method for claim 19, wherein said selected temperature is the temperature of reaction relevant with described reactive materials.
34. with the method for chemical reaction processing material, described method comprises:
Shine one or more with electromagnetic radiation source and plant particle, described electromagnetic radiation source has preset frequency; With
Make the local temperature of the heat energy increase of one or more parts of planting particle with the described part of described one or more the kind particles that raise.
Wherein the increase of heat energy be enough to described one or more plant in the adjacent domain of described part of particles and cause the chemical reaction that one or more plant materials.
35. as the method for claim 34, wherein said one or more kind particles comprise metallic substance.
36. as the method for claim 35, wherein said metallic substance is selected from gold, copper, silver, titanium, aluminium, Ni, Pd, Pt, Rh, Ir and Fe.
37. as the method for claim 34, the increase of wherein said heat energy is to be provided by described one or more resonance effect of planting particles, described resonance effect is derived from the described preset frequency of described electromagnetic radiation source.
38. as the method for claim 34, wherein said electromagnetic radiation comes self-excitation light source.
39. as the method for claim 34, the scope of wherein said preset frequency is that about 200 nanometers are to about 30000 nanometers.
40., wherein described one or more kind particles are provided on the substrate surface area as the method for claim 34.
41. as the method for claim 34, the feature of wherein said one or more kind particles is that length is that 1 nanometer is to about 100 nanometers.
42. as the method for claim 34, wherein said chemical reaction causes under preset temperature.
43. as the method for claim 34, wherein said one or more kind materials are gas form.
44. as the method for claim 34, wherein said one or more kind materials are liquid form.
45. as the method for claim 34, wherein said one or more kind materials are plasma body.
46. as the method for claim 34, the described part of wherein said one or more kind particles is all of described one or more kind particles.
47. as the method for claim 34, the described part of wherein said one or more kind particles is regional areas of described one or more kind particles.
48. as the method for claim 34, wherein the local temperature of Sheng Gaoing is a temperature of reaction.
49. as the method for claim 34, the adjacent domain of wherein said one or more kind particles is on described one or more kind particles and is in contact with it.
50. with the method for chemical vapour deposition formation material membrane, described method comprises:
The substrate that comprises at least a metal Nano structure pattern is provided, and described metal Nano structure comprises selected material;
Determine the plasmon resonance frequency of the described selected material of described nanostructure;
With the electromagnet source with preset frequency under described plasmon resonance frequency the described selected material of excitation portion so that the heat energy of described selected material increase;
Apply one or more above the described substrate of the described selected material that under being included in described plasmon resonance frequency, excites and plant precursor; With
Selective deposition film on described at least part selected material.
51. as the method for claim 50, wherein said selective deposition is caused by the preset temperature of the described selected material that the heat energy increase causes.
52. as the method for claim 50, wherein said substrate is maintained at indoor.
53. as the method for claim 50, wherein said material membrane is a ferroelectric film.
54. as the method for claim 50, wherein said one or more kind precursors are applied in during exciting described selected material under the described plasmon resonance frequency.
55. as the method for claim 50, wherein said part selected material is all of described nanostructure.
56. as the method for claim 50, wherein said selected material is gold, copper, silver, titanium, aluminium, Ni, Pd, Pt, Rh, Ir and Fe.
57. as the method for claim 50, wherein said electromagnetic radiation comes self-excitation light source.
58. as the method for claim 50, the scope of wherein said preset frequency is that about 200 nanometers are to about 30000 nanometers.
59. as the method for claim 50, the feature of wherein said nanostructure is that length is that 1 nanometer is to about 100 nanometers.
60. as the method for claim 50, wherein said one or more kind precursors are gas form.
61. as the method for claim 50, wherein said one or more kind precursors are plasma body.
62. as the method for claim 50, wherein said substrate is maintained at about room temperature and following temperature.
63. as the method for claim 50, the increase of wherein said heat energy is the local heat energy increase to described selected material.
64. with the system of chemical vapour deposition formation material membrane, described system comprises one or more storer, described one or more storer comprises:
The substrate transport that is used for comprising at least a metal Nano structure pattern is to indoor code, and wherein said metal Nano structure comprises selected material;
The electromagnet source that is used for having preset frequency under the plasmon resonance frequency of described selected material the described selected material of excitation portion so that the code that the heat energy of described selected material increases; With
Be used for applying one or more above the described substrate of the described selected material that under being included in described plasmon resonance frequency, excites and plant precursors, thus selective deposition film and keep other zone of described substrate that sedimentary code does not take place simultaneously on described part selected material only.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US52986903P | 2003-12-15 | 2003-12-15 | |
| US60/529,869 | 2003-12-15 | ||
| US11/006,457 | 2004-12-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1894438A true CN1894438A (en) | 2007-01-10 |
Family
ID=34710144
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800373092A Pending CN1894438A (en) | 2003-12-15 | 2004-12-14 | Method and system for forming a film of material using plasmon assisted chemical reactions |
| CNA2004800373641A Pending CN101090990A (en) | 2003-12-15 | 2004-12-14 | Electromagnetic control of chemical catalysis |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800373641A Pending CN101090990A (en) | 2003-12-15 | 2004-12-14 | Electromagnetic control of chemical catalysis |
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|---|---|
| EP (1) | EP1694822A2 (en) |
| JP (1) | JP2007525315A (en) |
| KR (1) | KR20070026370A (en) |
| CN (2) | CN1894438A (en) |
| AU (1) | AU2004305048A1 (en) |
| CA (1) | CA2549475A1 (en) |
| WO (1) | WO2005060635A2 (en) |
| ZA (1) | ZA200604251B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101799420A (en) * | 2010-03-10 | 2010-08-11 | 中国科学院光电技术研究所 | Metal micro-nano structure for enhancing molecular Raman scattering |
| CN101519184B (en) * | 2008-02-29 | 2012-05-23 | 财团法人工业技术研究院 | Method for manufacturing application substrate through photo-thermal effect |
| CN102517566A (en) * | 2011-12-16 | 2012-06-27 | 姜谦 | Method for selectively depositing atom layer to film by spray head device |
| US8323553B2 (en) | 2008-01-31 | 2012-12-04 | Industrial Technology Research Institute | Method for manufacturing a substrate with surface structure by employing photothermal effect |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2999753B1 (en) * | 2013-05-21 | 2018-07-25 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Thermally curable coating systems |
| ES2881679T3 (en) * | 2018-06-14 | 2021-11-30 | Fundacio Inst De Ciencies Fotòniques | A method and a system for self-healing an object |
| WO2023123069A1 (en) * | 2021-12-29 | 2023-07-06 | 陆一平 | Method for adjusting electromagnetic wave reaction on surface of material, and combined structure thereof |
| WO2023123067A1 (en) * | 2021-12-29 | 2023-07-06 | 陆一平 | Method and combined structure for forming and adjusting surface plasma pattern of material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100382879B1 (en) * | 2000-09-22 | 2003-05-09 | 일진나노텍 주식회사 | Method of synthesizing carbon nanotubes and apparatus being used therein. |
-
2004
- 2004-12-14 KR KR1020067014444A patent/KR20070026370A/en not_active Application Discontinuation
- 2004-12-14 CA CA002549475A patent/CA2549475A1/en not_active Abandoned
- 2004-12-14 AU AU2004305048A patent/AU2004305048A1/en not_active Abandoned
- 2004-12-14 JP JP2006544100A patent/JP2007525315A/en active Pending
- 2004-12-14 CN CNA2004800373092A patent/CN1894438A/en active Pending
- 2004-12-14 ZA ZA200604251A patent/ZA200604251B/en unknown
- 2004-12-14 EP EP04818015A patent/EP1694822A2/en not_active Withdrawn
- 2004-12-14 CN CNA2004800373641A patent/CN101090990A/en active Pending
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8323553B2 (en) | 2008-01-31 | 2012-12-04 | Industrial Technology Research Institute | Method for manufacturing a substrate with surface structure by employing photothermal effect |
| CN101519184B (en) * | 2008-02-29 | 2012-05-23 | 财团法人工业技术研究院 | Method for manufacturing application substrate through photo-thermal effect |
| CN101799420A (en) * | 2010-03-10 | 2010-08-11 | 中国科学院光电技术研究所 | Metal micro-nano structure for enhancing molecular Raman scattering |
| CN101799420B (en) * | 2010-03-10 | 2012-02-29 | 中国科学院光电技术研究所 | Manufacturing method of metal micro-nano structure for enhancing molecular Raman scattering |
| CN102517566A (en) * | 2011-12-16 | 2012-06-27 | 姜谦 | Method for selectively depositing atom layer to film by spray head device |
| CN102517566B (en) * | 2011-12-16 | 2015-02-04 | 姜谦 | Method for selectively depositing atom layer to film by spray head device |
Also Published As
| Publication number | Publication date |
|---|---|
| ZA200604251B (en) | 2008-05-28 |
| CA2549475A1 (en) | 2005-07-07 |
| CN101090990A (en) | 2007-12-19 |
| JP2007525315A (en) | 2007-09-06 |
| KR20070026370A (en) | 2007-03-08 |
| WO2005060635A2 (en) | 2005-07-07 |
| WO2005060635A3 (en) | 2007-05-03 |
| EP1694822A2 (en) | 2006-08-30 |
| AU2004305048A1 (en) | 2005-07-07 |
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