CN1892420B - Mask for continuously transverse solidifying technology and method for forming polycrystal silicon layer - Google Patents
Mask for continuously transverse solidifying technology and method for forming polycrystal silicon layer Download PDFInfo
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- CN1892420B CN1892420B CN200510082849A CN200510082849A CN1892420B CN 1892420 B CN1892420 B CN 1892420B CN 200510082849 A CN200510082849 A CN 200510082849A CN 200510082849 A CN200510082849 A CN 200510082849A CN 1892420 B CN1892420 B CN 1892420B
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- 238000005516 engineering process Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 3
- 229910052710 silicon Inorganic materials 0.000 title description 3
- 239000010703 silicon Substances 0.000 title description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 57
- 229920005591 polysilicon Polymers 0.000 claims abstract description 30
- 239000012528 membrane Substances 0.000 claims description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 238000005499 laser crystallization Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 230000004927 fusion Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000035784 germination Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- Thin Film Transistor (AREA)
Abstract
The present invention disclose a mask used in continue transverse direction solidifying technology for generating one crystallizing boundary dispersive polysilicon film. The present invention mask atleast contains one first zone, one second zone, and one third zone, wherein first zone and third zone being transparent, second zone being shading, first zone surrounded in second zone and first and second zone having basically same periphery shape, third zone and first zone having same periphery shape, and third zone and first zone and second zone parallel configured in one predetermined direction. Said invention has advantages of utilizing mask pattern complemental concept, designing out at least two crystal grain directional polysilicon pattern, through controlling mask plurality of shadingzone and photic zone pattern area size to obtain perfect grain boundary.
Description
Technical field
The present invention relates to the mask that uses in a kind of polysilicon membrane technology, particularly a kind of continuously transverse solidifying technology produces the mask of the polysilicon membrane that a crystalline boundary disperses, and is the polysilicon of a kind of mask and formation thereof concretely.
Background technology
Thin film transistor (TFT) (Thin Film Transistor; TFT) be widely used on the active LCD, wherein the material of thin film transistor (TFT) use has two types of amorphous silicon (amorphous-silicon) and polysilicons (poly-silicon) usually.
In LCD was made, polycrystalline silicon material had many characteristics that are better than amorphous silicon material.As, polysilicon has bigger crystal grain (grain), and electronics moves freely in polysilicon easily, so the electron mobility of polysilicon (mobility) is higher than amorphous silicon.The reaction time of the polycrystalline SiTFT made from polysilicon is faster than amorphous silicon film transistor.In the LCD of equal resolution, the substrate area that use polycrystalline SiTFT (poly-Si TFT) takies has improved the aperture opening ratio of liquid crystal panel less than the substrate area of using amorphous silicon film transistor to take.Under identical brightness, use the LCD (poly-Si TFT LCD) of polycrystalline SiTFT can use the backlight that hangs down wattage, reach the requirement of low power consumption.
At present, use low temperature polycrystalline silicon technology (Low Temperature Poly-Silicon mostly; LTPS) make polysilicon membrane on substrate, low temperature polycrystalline silicon technology is as thermal source with excimer laser (Excimer Laser).Shine (irradiate) when laser light and have on the substrate of amorphous silicon membrane, amorphous silicon membrane absorbs the energy of excimer laser and is transformed into polysilicon membrane.
Continuously transverse solidifying (Sequential Lateral Solidification; SLS) technology is a kind of polysilicon formation technology of utilizing quasi-molecule laser annealing to develop.Use laser to produce the laser of given shape by mask, after the first road laser crystallization goes out the crystal grain of horizontal growth, the a part of region overlapping of the second road laser radiation and the first road crystal region, by the irradiation amorphous silicon region, it can be the crystalline particle that crystal seed becomes to grow long column shape with the first road crystallization polysilicon membrane that the silicon thin film in laser radiation zone, second road begins after the fusion.
Figure 1A is depicted as one and uses the continuously transverse solidifying method to make the side diagrammatic cross-sectional view of polysilicon membrane.Shown in Figure 1A, an amorphous silicon membrane 11 is formed on the substrate 10 by chemical vapor deposition (CVD) or sputtering method (sputtering), and a mask 2 is arranged at the top of amorphous silicon membrane 11.Shown in Figure 1B, mask 2 comprises a plurality of strip photic zones 21 and a plurality of strip shading region 22.One LASER Light Source can be shone different zones progressively to obtain the poly-silicon pattern of cross growth with stepping on amorphous silicon membrane 11 according to the parallel stepping of direction that is parallel to photic zone 21 and shading region 22 rectangular capable pattern minor axises to scanning.
Fig. 1 C is depicted as through mask 2 resulting poly-silicon pattern structural representations.The grain boundary 111 that the polysilicon that is obtained by mask 2 obtains (grain boundary) is perpendicular to the direction of crystal grain-growth.Show according to experimental result: the channel of thin film transistor (TFT) can have better electrical performance when parallel with the crystal grain-growth direction, otherwise if transistorized channel is vertical with the crystal grain-growth direction, it is electrically then relatively poor.Therefore, the thin film transistor (TFT) channel on the panel often all must be pressed single direction and arrange, and this has many inconvenience for circuit design.
Therefore, the problem that how to solve the wiring design of the crystallization direction influence that runs in the SLS technological process is to be one of striving direction of relevant practitioner.
Summary of the invention
The object of the present invention is to provide a kind of polysilicon membrane mask, to be applied to continuously transverse solidifying technology, to produce the polysilicon membrane that a crystalline boundary is disperseed.
Another object of the present invention is to provide a kind of mask that is applied to continuously transverse solidifying technology, to produce poly-silicon pattern with at least two kinds of grain orientation.
The invention provides a kind of mask that is applied to continuously transverse solidifying technology, in order to produce the polysilicon membrane that a crystalline boundary is disperseed.Mask of the present invention comprises at least: a first area, a second area and one the 3rd zone.Wherein first area and the 3rd regional printing opacity, the second area shading.The first area be centered around second area around, and first area and second area have substantially the same peripheral shape.The 3rd zone has identical peripheral shape with the first area, and presses a predetermined direction configured in parallel with first area and second area.
The present invention also provides a kind of using mask to form the method for a polysilicon layer, it is characterized in that, comprises:
One laser crystallization processes for the first time provides a laser beam to see through described mask and scans an amorphous silicon membrane; Change the relative position of described mask and described laser beam flying direction; And a laser crystallization processes for the second time, provide a laser beam to see through described mask and scan described amorphous silicon membrane; Wherein, described laser alignment after-sun is that the direction of described first area to described the 3rd zone along described mask moves when the irradiation area of described amorphous silicon membrane.
In sum, mask in the application SLS technology that the present invention discloses is a notion of utilizing the graphic design complementation on the mask, design the poly-silicon pattern that can produce at least two kinds of grain orientation, and by a plurality of shading regions and the photic zone pattern area size on the control mask, to obtain perfect grain boundary.
Description of drawings
Figure 1A is the side diagrammatic cross-sectional view that a use continuously transverse solidifying method is made polysilicon membrane;
Figure 1B is an employed mask front schematic view among Figure 1A;
The poly-silicon pattern structural representation of Fig. 1 C for obtaining by the mask among Figure 1B;
Fig. 2 is the mask schematic top plan view of a preferred embodiment of the present invention;
Fig. 3 forms the schematic flow sheet of a polysilicon layer in the SLS technology for the mask of using the present invention's exposure;
Fig. 4 A～Fig. 4 B is the poly-silicon pattern synoptic diagram that mask forms among Fig. 2;
Mask forms poly-silicon pattern channel configuration synoptic diagram to Fig. 4 C among Fig. 2 in order to use;
Fig. 5 A～Fig. 5 B is the poly-silicon pattern synoptic diagram that mask forms among Fig. 2;
Another preferred embodiment pattern synoptic diagram of mask that Fig. 6 discloses for the present invention;
Fig. 7 A～Fig. 7 B is the poly-silicon pattern synoptic diagram that mask forms among Fig. 6;
Fig. 8 is another preferred embodiment pattern synoptic diagram of the mask of the present invention's exposure;
Fig. 9 A～Fig. 9 B is the poly-silicon pattern synoptic diagram that mask forms among Fig. 8;
Another preferred embodiment pattern synoptic diagram of mask that Figure 10 discloses for the present invention.
The primary clustering symbol description
10 substrates, 11 amorphous silicon membranes, 2 masks
21 photic zones, 22 shading regions, 111 grain boundaries
3 masks, 31 first areas, 32 second areas
33 the 3rd regional 3a thin film transistor (TFT) channel 3b gate lines
4 masks, 41 first areas, 42 second areas
43 the 3rd regional 5 masks, 51 first areas
52 second areas 53 the 3rd regional 6 masks
62 second areas 63 the 3rd zone, 61 first areas
66 the 6th zones, 65 the 5th zones, 64 the 4th zones
68 Section Eight territories, 67 SECTOR-SEVEN territories
Embodiment
The present invention has disclosed a kind of mask that is applied to continuously transverse solidifying technology (SLS), in order to produce the polysilicon membrane that a crystalline boundary is disperseed.Below in conjunction with accompanying drawing and a plurality of specific embodiments, describe mask of the present invention in detail.
Be illustrated in figure 2 as the mask schematic top plan view of a preferred embodiment of the present invention.Mask 3 among Fig. 2 comprises at least: a first area 31, a second area 32, and one the 3rd zone 33.Wherein, first area 31 and the 3rd zone 33 are printing opacity, and 32 of second areas are shading.
First area 31 be centered around second area 32 around, and first area 31 and second area 32 have substantially the same peripheral shape.The 3rd zone 33 has identical peripheral shape with first area 31, and in the present embodiment, the peripheral shape in above-mentioned three zones is a rectangular configuration.And the 3rd zone 33 and first area 31 and second area 32 are with a predetermined direction configured in parallel.
Mask of the present invention is applied in the described continuously transverse solidifying technology of prior art among Figure 1A, to reach the purpose that produces the polysilicon membrane that a crystalline boundary disperses.Figure 3 shows that the mask of using the present invention's exposure in the SLS technology to form the schematic flow sheet of a polysilicon layer, comprises at least:
Step S301: 33 pairs one amorphous silicon membranes in first area 31 or the 3rd zone that provide a laser beam flying to see through mask 3 carry out a laser crystallization technology for the first time;
Step S302: change the relative position of mask 3 and laser beam flying direction, the method that wherein changes the relative position of mask 3 and laser beam flying direction comprises: mobile mask 3 or mobile laser beam flying direction can change according to the situation of operation board;
Step S303: provide a laser beam to see through mask 3 scannings same amorphous silicon membrane is carried out a laser crystallization technology for the second time.Wherein, the laser after-sun moves to the 3rd regional 33 directions along the first area 31 of mask 3, or is moved by the 3rd direction of zone 33 to first area 31 in the corresponding step 301 of irradiation area of amorphous silicon membrane.
Fig. 4 A, Fig. 4 B are depicted as by above-mentioned mask 3 and the produced polysilicon membrane of technology.Fig. 4 A is depicted as step S301 finish for the first time laser crystallization technology after, the poly-silicon pattern that presents on the amorphous silicon membrane.Because the crystal silicon after the fusion has the characteristic that begins into germination from low temperature, therefore can form the poly-silicon pattern that the grain boundary shown in Fig. 4 A disperses.When the laser crystallization technology second time that technology enters step S303, when the shading region on the mask 3 just is opposite with photic zone, then can finish the poly-silicon pattern shown in Fig. 4 B.
Among the above-mentioned steps S302, change the relative position of mask 3 and laser beam flying direction, when the side that moves for the direction of first area 31 to the 3rd zone 33 along mask 3 moves, can obtain the poly-silicon pattern shown in Fig. 4 A～Fig. 4 B; If move by the 3rd direction of zone 33 to first area 31, then can obtain the poly-silicon pattern shown in Fig. 5 A～Fig. 5 B. the mask pattern that the present invention discloses is used to obtain the poly-silicon pattern that the grain boundary disperses, has the crystal grain of both direction crystallization at least, no matter the irradiation sequence of laser why, so long as in regular turn zones of different is progressively shone, all can obtain the present invention and wish the purpose that reaches.
The mask pattern of the present invention's design is the notion by the similar pattern complementation, designs different lightproof areas and transmission region.What deserves to be mentioned is, when making multidirectionalization of poly-silicon pattern grain boundary, make the well-balanced perfection of crystal grain-growth, have clever thought on the size design of mask pattern of the present invention.Mask 3 with Fig. 2 is an example, and wherein the area size in the 3rd zone 33 is between between the area of the area of first area 31 and second area 32.This is at the first time of laser technology and for the second time in the laser crystallization technology when mobile mask and laser position, causes laser reirradiation transmission region.Because the zone of lower temperature when the border of second area 22 shading regions is the amorphous silicon fusion, meeting crystallization faster, thereby cause the bad probability of crystal grain crystallization to improve, thus laser reirradiation transmission region with regional area fusion once again to reach the grain boundary more perfect purpose of growing up.
The mask that utilizes the present invention to disclose can become to grow the crystalline membrane of two kinds of directions, cooperates the double-gate film transistor to obtain evenly and excellent electrical property.Be depicted as thin film transistor (TFT) channel (channel) 3a and gate line (gate line) the 3b synoptic diagram of the poly-silicon pattern configuration of using mask 3 formation as Fig. 4 C.
The mask that the present invention discloses is applied in and can obtains the polysilicon membrane that a crystalline boundary is disperseed in the continuously transverse solidifying technology, and the pattern form that uses on the mask is unrestricted.As long as can overlapping, the frame shape shape that design can be produced at least two kinds of directions and arbitrary shape simultaneously is used in the mask pattern of the present invention.Fig. 6 and Figure 8 shows that the pattern synoptic diagram of two other preferred embodiment of the mask that the present invention discloses.Mask 4 among Fig. 6 comprises first area 41, second area 42 and the 3rd zone 43, and the design of relative position and optical characteristics are identical with above-mentioned mask 3, and just the peripheral shape in first area 41, second area 42 and the 3rd zone 43 of mask 4 be a circle.Mask 4 is applied in the poly-silicon pattern that can obtain in the SLS technology shown in Fig. 7 A～Fig. 7 B.Similarly, utilize the mask 5 among Fig. 8, the peripheral shape in its first area 51, second area 52 and the 3rd zone 53 is a triangle, can obtain the poly-silicon pattern shown in Fig. 9 A～Fig. 9 B.
The lightproof area in the mask that discloses among the present invention in the mask pattern and the number of transmission region are not limited.As long as design can be produced at least two kinds of directions simultaneously, the frame shape of a plurality of same shapes just can overlap and be used in the mask pattern of the present invention.Another preferred embodiment synoptic diagram of mask that discloses for the present invention as shown in figure 10.Mask 6 among Figure 10 comprises: a first area 61, a second area 62, one the 3rd zone 63, one the 4th zone 64, one the 5th zone 65, one the 6th zone 66, a SECTOR-SEVEN territory 67, an and Section Eight territory 68.Wherein first area 61, the 3rd zone 63, the 4th zone 64, SECTOR-SEVEN territory 67, and Section Eight territory 68 be photic zone; Second area 62, the 5th zone 65, and the 6th zone 66 be shading region, the basic peripheral shape of above-mentioned zone is a rectangle.
Be equal to other embodiment design concept, utilize the difference of each interregional area size of the pattern in the mask 6 to make laser reirradiation transmission region.For example, the area in the 6th zone 66 is between the area in second area 62 areas and the 4th zone 64, and the area in Section Eight territory 68 is between the area in the 4th regional 64 areas and the 5th zone 65.
Compared with the prior art, the mask of using in the SLS technology of the present invention's exposure has following following properties and advantage:
1. utilize the notion of the graphic design complementation on the mask, design the poly-silicon pattern that to make at least two kinds of grain orientation.
2. by a plurality of shading regions and photic zone pattern area size on the control mask, can obtain perfect grain boundary.
Above-listed detailed description is that the foregoing description is not to be used to limit protection scope of the present invention at the specifying of preferred embodiment of the present invention, and does not everyly break away from the equivalence that the technology of the present invention does and implements or change, all should be contained in the protection domain of this case.
Claims (9)
1. a mask that is applied to continuously transverse solidifying technology is characterized in that, mask is in order to produce the polysilicon membrane that a crystalline boundary is disperseed, and described mask comprises:
One first area is printing opacity;
One second area is complete shading, wherein said first area be fully enclosed in described second area around, described first area has substantially the same peripheral shape with described second area; And
One the 3rd zone, be printing opacity, has identical peripheral shape with described first area, and described the 3rd zone and described first area and described second area be with a predetermined direction configured in parallel, and the area in described the 3rd zone is between the area of the area of described first area and described second area.
2. mask as claimed in claim 1 is characterized in that, also comprises:
One the 4th zone is printing opacity; Wherein, described second area is fully enclosed in around the described four-range, and described second area has identical peripheral shape with described the 4th zone.
3. mask as claimed in claim 2 is characterized in that, also comprises:
One the 5th zone is complete shading; Wherein, described the 3rd zone be fully enclosed in described the 5th zone around, described the 3rd zone has identical peripheral shape with described the 5th zone, and the area in described the 5th zone is between the area and described four-range area of described second area.
4. mask as claimed in claim 3 is characterised in that, also comprises:
One the 6th zone is printing opacity; Wherein, described the 5th zone be fully enclosed in described the 6th zone around, described the 5th the zone have identical peripheral shape with described the 6th zone.
5. mask as claimed in claim 1 is characterized in that, the peripheral shape of described first area and described second area is a triangle.
6. mask as claimed in claim 1 is characterized in that, the peripheral shape of described first area and described second area is circular.
7. mask as claimed in claim 1 is characterized in that, the peripheral shape of described first area and described second area is oval.
8. mask as claimed in claim 1 is characterized in that, the peripheral shape of described first area and described second area is a rectangle.
9. use the method that mask as claimed in claim 1 forms a polysilicon layer for one kind, it is characterized in that, comprise:
One laser crystallization processes for the first time provides a laser beam to see through described mask and scans an amorphous silicon membrane;
Change described mask and described laser beam flying direction, move described mask or move both wherein a kind of of described laser beam flying direction; And
One laser crystallization processes for the second time provides a laser beam to see through described mask and scans described amorphous silicon membrane;
Wherein, described laser alignment after-sun is that the direction of described first area to described the 3rd zone along described mask moves when the irradiation area of described amorphous silicon membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510082849A CN1892420B (en) | 2005-07-08 | 2005-07-08 | Mask for continuously transverse solidifying technology and method for forming polycrystal silicon layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510082849A CN1892420B (en) | 2005-07-08 | 2005-07-08 | Mask for continuously transverse solidifying technology and method for forming polycrystal silicon layer |
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| Publication Number | Publication Date |
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| CN1892420A CN1892420A (en) | 2007-01-10 |
| CN1892420B true CN1892420B (en) | 2010-05-05 |
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| CN200510082849A Expired - Fee Related CN1892420B (en) | 2005-07-08 | 2005-07-08 | Mask for continuously transverse solidifying technology and method for forming polycrystal silicon layer |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101221902B (en) * | 2008-02-03 | 2010-11-24 | 友达光电股份有限公司 | Mask used for continuous side direction crystal growing technology and laser crystallization method |
| KR20120048240A (en) * | 2010-11-05 | 2012-05-15 | 삼성모바일디스플레이주식회사 | Crystallization apparatus, crystallization method, and method of manufacturing organic light emitting display apparatus using sequential lateral solidification |
| CN104576438B (en) * | 2013-10-29 | 2018-02-13 | 昆山国显光电有限公司 | A kind of apparatus and method for preparing polysilicon membrane |
| CN109270743B (en) * | 2018-11-13 | 2024-02-13 | 成都京东方显示科技有限公司 | Mask plate for photo-alignment and mask set for photo-alignment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW527732B (en) * | 2001-08-21 | 2003-04-11 | Samsung Electronics Co Ltd | Masks for forming polysilicon and methods for manufacturing thin film transistor using the masks |
| JP2005175463A (en) * | 2003-11-19 | 2005-06-30 | Samsung Electronics Co Ltd | Crystallization mask, crystallizing method using the same and manufacturing method of thin film transistor mimetic diagram containing the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW527732B (en) * | 2001-08-21 | 2003-04-11 | Samsung Electronics Co Ltd | Masks for forming polysilicon and methods for manufacturing thin film transistor using the masks |
| JP2005175463A (en) * | 2003-11-19 | 2005-06-30 | Samsung Electronics Co Ltd | Crystallization mask, crystallizing method using the same and manufacturing method of thin film transistor mimetic diagram containing the same |
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| CN1892420A (en) | 2007-01-10 |
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