CN1892196A - Electronic component testing system - Google Patents
Electronic component testing system Download PDFInfo
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- CN1892196A CN1892196A CN200510083533.1A CN200510083533A CN1892196A CN 1892196 A CN1892196 A CN 1892196A CN 200510083533 A CN200510083533 A CN 200510083533A CN 1892196 A CN1892196 A CN 1892196A
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Abstract
Electronic assembly test system uses measured granular temperature as part of test record according to at least one crystal grain of chip emissive light, or used as crystal grain temperature-controlled base. The present invention uses measuring crystal grain temperature mode to substitute public known temperature detector indirect mode, simplifying chip test operational temperature control system, improving crystal grain temperature control validity and increasing test reliability. Mainly part of said invention includes one crystal grain test device for testing at least one item of granular function or quality; and one temperature detector metering granular temperature according to crystal grain emissive light. Temperature detector can connect with crystal grain testing device, said invented test system radiates illuminator emissive beam of light to chip or crystal grain to execute heating, said test system capable of using for other electronic assembly.
Description
Technical field
The present invention is the system of relevant IC semiconductor test, the system of at least one crystal grain of especially relevant test one wafer, and the more particularly relevant light that uses is to measure the electronic assembly test system of die temperature.
Background technology
The wafer sort operation needs-temperature control system usually, with Fig. 1 and Fig. 2 known wafer sort temperature control system is described now.Top person is a top view among Fig. 1, and the below person is a side view, and wherein wafer 1 places-carrier 3, and wafer 1 comprises many crystal grain 2.Fig. 2 is the synoptic diagram of the temperature control system of known wafer sort operation, and wherein Temperature Detector 5 is measured the temperature of carrier 3 (carrying tested wafer, tested wafer as shown in Figure 1); Carrier temperature controller 10 is according to the measured value of Temperature Detector 5, and control heater 4 is to carrier 3 heating; On the other hand, cooling controller 11 is according to carrier 3 temperature with cooling device 6, and control cooling device 6 is gone into, gone out 7, the 9 pairs of carriers 3 in loop and cool off via cooling.
By above-mentioned Fig. 1, Fig. 2 as can be known, if the measured value of Temperature Detector 5 can not accurately react the temperature of tested crystal grain, then carrier temperature controller 10 can't correctly make the temperature of tested crystal grain (if for example the 2 selected surveys of Fig. 1 crystal grain) close in the condition of setting with cooling controller 11, and this can cause the serious deviation of test result.By the above fact as can be known, existing wafer operation is difficult to adapt to the requirement of precision, because wherein wafer contacts carrier 3, other adjacent crystal grain of tested crystal grain 2 contacts, for tested crystal grain 2, wafer and carrier 3 as same big heat radiator, the heat that tested crystal grain 2 is produced because of input test voltage, electric current etc. is waved diffusing, can not correctly conduct to Temperature Detector (Temperature Detector is that contact carrier 3 is to measure temperature).
Now with Fig. 3 a, Fig. 3 b illustration, prove that known wafer sort scheme can not measure the actual temperature of tested crystal grain.Among Fig. 3 a-(300mm) wafer 1 during diameter 12 (places-loading end of the carrier of copper material, carrier as shown in Figure 1, it is not shown in Fig. 3), in the distance center of circle (center wafer) 61 is 122.5mm part 62, put a focus (75 ℃ of temperature, size 12 * 12mm), and 61 be 140mm and be evenly distributed (45 angles of being separated by) in A in the distance center of circle, B, C, D, E, F, G, the point of 8 positions such as H, and 61 be 105mm and be evenly distributed (45 angles of being separated by) in a in the distance center of circle, b, c, d, e, f, g, the point of 8 positions such as h, each with thermometer measure it, measurement result is shown in Fig. 3 b.Among Fig. 3 b, the temperature value that indicates one by one from left to right along transverse axis is represented the temperature measurement result of positions such as A, a, B, b, C, c, D, d, E, e, F, f, G, g, H, h respectively.According to shown in Fig. 3 b as can be known, at two positions A apart from this focus (75 ℃ of temperature) 17.5mm, a temperature neither to 25.4 ℃, apart from this focus (75 ℃ of temperature) each position B greater than 17.5mm, C, D, E, F, G, H, b, c, d, e, f, g, the temperature of h etc. is neither to 25.1 ℃, significantly be lower than 75 ℃ of focus all, this shows: the cooling effect of carrier and wafer integral body can have a strong impact on the measurement of tested crystal grain true temperature, make the temperature control of tested crystal grain unrealistic, also just can not support accurate wafer sort, even the temperature conditions that allows general wafer sort substantial deviation set.
Weakness in view of known wafer sort, the present invention develops a kind of scheme, and it directly measures the temperature of tested crystal grain according to the light emitted line of tested crystal grain, needn't be limited by the cooling effect of carrier and wafer integral body, effectively promote the reliability and the degree of accuracy of wafer sort.Be relevant to the preceding case in the technology of the present invention field, as United States Patent (USP) 5,198,752,6,605,955,6,288,561,6,802,368,6,771, No. 086 etc., the temperature of tested crystal grain is controlled the temperature value that all non-basis is directly measured crystal grain, also all be limited by the weakness of above-mentioned known wafer sort certainly.
Summary of the invention
One of the object of the invention is, a kind of scheme is provided, and in the wafer sort operation, directly measures the temperature of tested crystal grain.
Two of the object of the invention is, a kind of scheme is provided, and in the wafer sort operation, measures the actual temperature of tested crystal grain, as the some of test record.
Three of the object of the invention is, a kind of scheme is provided, and in the wafer sort operation, directly measures the temperature of tested crystal grain, as the basis of tested die temperature control.
Four of the object of the invention is, simplifies the temperature control system of wafer sort operation.
Five of the object of the invention is, improves the validity of the tested crystal grain temperature control of wafer sort operation.
Six of the object of the invention is, promotes fiduciary level, the degree of accuracy of wafer sort.
One typical example of the electronic assembly test system of the present invention's development, it is the semiconductor test macro, at least one crystal grain (tested crystal grain) for test one wafer, the typical example of this semiconductor test system comprises: a carrying tool, a disk for example, for this wafer of carrying, can be metal material or other material; One crystal grain test tool comprises a crystal grain contactor, and this crystal grain test tool is among both at least one such as the function of this crystal grain of test, quality, and this crystal grain contactor is for this crystal grain of contact, this crystal grain is imported, derives voltage, electric current etc.; And a Temperature Detector, with this crystal grain distance of being separated by, measure the temperature of this crystal grain according to a kind of light that this crystal grain sent.The result of the temperature of above-mentioned this crystal grain of measurement can be as the some of test record, or as the basis of this die temperature control.With the measuring value of the temperature of this crystal grain some as test record, or in order to control the relevant operations such as temperature of this crystal grain, can artificially carry out, or by subsidiary execution of this crystal grain test tool (for example this crystal grain test tool comprises a processor in order to carry out), or, can borrow wired or wireless execution to be electrically connected between this crystal grain test tool, Temperature Detector or processor or the like by additional ppu execution.
In the above-mentioned semiconductor test system, if this Temperature Detector is to be an infrared temperature detecting device, then it receives the infrared ray that this crystal grain sends and measures the temperature of this crystal grain.As long as this crystal grain is to there being a light to pass through the path between this Temperature Detector, allow this Temperature Detector of arrival that this light that this crystal grain sends is borrowed, this Temperature Detector can be positioned at the same side or the opposition side of this carrying tool with this wafer, for example: if this Temperature Detector and this wafer are positioned at the same side of this carrying tool, and this crystal grain has at least one position between this Temperature Detector being a space, then this space constitutes a light and passes through the path, advances and arrives this Temperature Detector for this crystal grain emitted light; If both lay respectively at the opposition side of this carrying tool this Temperature Detector and this wafer etc., then this carrying tool must comprise a printing opacity partly at least, this printing opacity is partly between this crystal grain and this Temperature Detector, pass through the path as a light, arrive this Temperature Detector for this crystal grain emitted light passes through.
Above-mentioned semiconductor test system, can more comprise a temperature compensator, this Temperature Detector sends a temperature indication signal according to the measurement of this die temperature again, whether this crystal grain test tool has begun to test this crystal grain according to it is sent a test mode indicator signal, this temperature compensator to should the test mode indicator signal, this temperature indication signal and calorify this crystal grain.
In the above-mentioned semiconductor test system, if both are positioned at the same side of this carrying tool this Temperature Detector and this wafer etc., and this crystal grain has at least one position to pass through the path to constituting a light between this Temperature Detector, this crystal grain emitted light of confession is advanced and is arrived this Temperature Detector, then the position of this Temperature Detector is not limited, and just, this Temperature Detector can join with this crystal grain test tool, or in be built in this crystal grain test tool, or be loaded on other any position.
If will be built in this crystal grain test tool in above-mentioned this Temperature Detector, then constitute another typical example of the semiconductor test system of the present invention's development, it also is that it comprises at least one crystal grain (tested crystal grain) of test one wafer: a carrying tool, for this wafer of carrying; One test tool, comprise a semiconductor tester (a for example crystal grain tester) and a Temperature Detector, this crystal grain tester is among both at least one such as the function of this crystal grain of test, quality, this crystal grain tester has terminal this crystal grain of contact that supplies, this end is to there being a light to pass through the path between this Temperature Detector, the size that this light passes through the path meets a light path setting value, allow that a kind of light that this crystal grain sends arrives this Temperature Detector, this Temperature Detector measures the temperature of this crystal grain according to this light.Above-mentioned this semiconductor tester can be divided into a body, an outstanding spicule and should end, should give prominence to spicule between this body and this end, if this light path setting value satisfies a condition: make this end pass through the some in path and should give prominence between the spicule between this light, then tested crystal grain inevitable some be connected this light and pass through the path, and a kind of light that tested crystal grain sent just can pass through this light and pass through the path and arrive this Temperature Detector.
Above-mentioned semiconductor test system, wherein this semiconductor tester has a function: obtain an attribute test record behind the test semiconductor, this Temperature Detector has a function: when this semiconductor tester is carried out test, pass through the path via this light and receive a kind of light, and obtain a measured temperature according to this light, this test has a function again: send a test result according to this attribute test record with this measured temperature.This semiconductor tester also can have an effect: obtain a functional test record behind the test semiconductor, and this test tool also can have an effect: send a test result according to this functional test record with this measured temperature.This Temperature Detector also can have another function again: send a temperature compensation signal when this measured temperature is outside a temperature setting range, starts a temperature control mechanism/system.
The test macro of the present invention's development needn't be subject to semiconductor test, and can reach test in general electronic package, so typical example again of the test macro of the present invention's development, be for test one electronic package (for example semiconductor subassembly or comprise the assembly of integrated circuit) or the like, it is main partly to be: an electronic assembly tester, among both at least one such as the function of this electronic package of test, quality; And a Temperature Detector, with this electronic package distance of being separated by, measure the temperature of this electronic package according to the light that this electronic package sent.Above-mentioned this electronic assembly tester has an end, this end is to there being a light to pass through the path between this Temperature Detector, the size that this light passes through the path meets a light path setting value, this light path setting value satisfies a condition: when this end of this electronic assembly tester contacts a tested assembly, this tested assembly has at least one position emitted light, can pass through the path through this light and arrive this Temperature Detector.In fact, the test macro of the present invention's development needn't be subject to that a kind of assembly, as long as tested assembly can send the light that can react self-temperature, just: if the light that tested assembly sends, can be as the basis of measuring tested assembly temperature.
The test macro of the present invention's development is because the temperature survey of tested assembly is with the existing indirect mode of direct replacement, so can simplify temperature control system, the validity of improvement temperature control, brilliant fiduciary level, the degree of accuracy of surveying of lifting.
Description of drawings
Fig. 1, Fig. 2, Fig. 3 a, Fig. 3 b illustrate known case;
Represent embodiment for first kind of Fig. 4 a explanation semiconductor test system of the present invention;
A kind of representative embodiment of the type of heating of Fig. 4 b explanation semiconductor test system of the present invention;
Fig. 5 illustrates that second kind of semiconductor test system of the present invention is represented embodiment;
Fig. 6 semiconductor test system of the present invention is described the third represent embodiment;
Fig. 7 illustrates that the 4th kind of semiconductor test system of the present invention is represented embodiment.
Embodiment
For ease of explaining orally with reference to the accompanying drawings, each component size ratio of icon of the present invention may not be fully corresponding to actual user.
Now illustrate that with reference to figure 4a first kind of semiconductor test system of the present invention is represented embodiment, it is at least one crystal grain 2 of test one wafer 1, and it comprises: a carrying tool 3, for this wafer 1 of carrying; One crystal grain test tool 12 comprises a crystal grain contactor 13, and this crystal grain test tool 12 is among both at least one such as the function of each crystal grain of testing wafer 1, quality, and this crystal grain contactor 13 is for contact this crystal grain 2 (tested crystal grain); And a Temperature Detector 14, with this crystal grain 2 distance 24 (for example one section space length) of being separated by, a kind of light (not being shown in figure) that is sent according to this crystal grain 2 measures the temperature of this crystal grain 2.
In the above-mentioned semiconductor test system, one position of this crystal grain 2 between this Temperature Detector 14 if a linear columnar gap is arranged (center line of this columnar gap is a straight line, length is corresponding to this distance 24, because of very easily understanding, so this columnar gap is not shown in figure), then this linear columnar gap can be passed through path 34 as a light, allows that this light that this crystal grain 2 is sent arrives this Temperature Detector 14.Though among Fig. 4, allow that it is linear columnar gap that light that this light that this crystal grain sends arrives this Temperature Detector passes through path 34, but the present invention allows that the light that light that a tested crystal grain is sent arrives a Temperature Detector passes through the path, to be subject to not be the space to necessity, more unnecessary being subject to is the linear columnar gap, unique conditional: have a light to pass through the path and allow light that tested crystal grain sent advance to receive by Temperature Detector 14, and be measured the temperature of tested crystal grain by can be allowed Temperature Detector 14 by Temperature Detector 14 received light, for example to pass through the path can be a light penetrating object to this light, or one section linear or tortuous optical fiber.
Fig. 4 b is depicted as semiconductor test system of the present invention and utilizes illuminator (for example: bulb, fluorescent tube) 23 to carry out a kind of embodiment that heating is risen wafer 1 or tested crystal grain 2 temperature, and this illuminator 23 sends a light beam 29 directive wafers 1 or tested crystal grain 2.Though diagram light beam 29 can be regarded as passing through carrying tool 3, obviously light beam 29 also can needn't necessarily pass through carrying tool 3 from direct directive wafer of other angles or tested crystal grain.The function of illuminator 23, Temperature Detector 14 etc. is integrated to control the temperature of tested crystal grain 2.For example: this Temperature Detector 14 has some functions: when this semiconductor tester is carried out test, pass through the path via this light and receive a kind of light (tested crystal grain 2 sends), and obtain a measured temperature according to this light, and when this measured temperature is outside a temperature setting range, send a temperature compensation signal, start a temperature control mechanism/system, control illuminator 23 go out heat, this temperature setting range is the setting value of the temperature range of being allowed when tested for crystal grain 2.
Above-mentioned semiconductor test system preferably more comprises a driver (easily understanding so be not shown in figure), in order to drive this carrying tool 3, make this crystal grain 2 arrive a tested position (easily understanding) so be not shown in figure, this tested position is to a end (easily understanding so is not shown in figure) that should crystal grain contactor 13, is convenient to allow these crystal grain contactor 13 contacts.
Now illustrate that with reference to figure 5 second kind of semiconductor test system of the present invention is represented embodiment, it also is at least one crystal grain 2 (tested crystal grain) for test one wafer 1, it comprises a carrying tool 3, one crystal grain test tool 12, an and Temperature Detector 15, carrying tool 3 is for this wafer 1 of carrying, and comprise a printing opacity partly (not being shown in figure) at least, this printing opacity is partly between this crystal grain 2 and this Temperature Detector 15,, a kind of light (not being shown in figure) that this crystal grain 2 sent arrives this Temperature Detector 15 for passing through, this light that allows Temperature Detector 15 be sent according to this crystal grain 2 measures the temperature of this crystal grain 2, crystal grain test tool 12 comprises a crystal grain contactor 13, this crystal grain test tool 12 is for the function of each crystal grain of testing wafer 1, among both at least one such as quality, this crystal grain contactor 13 is for these crystal grain 2 (tested person person) of contact.This printing opacity of carrying tool 3 partly (not being shown in figure) can constitute with quartzy, and perhaps the integral body of carrying tool 3 all constitutes with quartzy.Because the space also can allow the light that tested crystal grain sent pass through, so Temperature Detector 15 can contact or not contact carrying tool 3 (can with this printing opacity partly be separated by a space).
Now represent embodiment with reference to the third of figure 6 explanation semiconductor test system of the present invention, on behalf of the difference of embodiment, itself and first kind shown in Figure 4 be: a Temperature Detector 16 shown in Figure 6 joins with crystal grain test tool 12, and a Temperature Detector 14 shown in Figure 4 separates with crystal grain test tool 12.This crystal grain contactor 13 of Fig. 6 has at least one terminal 19 for this crystal grain 2 of contact, and this end 19 has a light to pass through path 36 between this Temperature Detector 16.When test one crystal grain (for example Fig. 6 crystal grain 2), end 19 these tested crystal grain of contact of this crystal grain contactor 13 pass through to arrive this Temperature Detector 16 so this light passes through the light of allowing that this tested crystal grain sends in path 36.
Now illustrate that with reference to figure 7 the 4th kind of semiconductor test system of the present invention is represented embodiment, on behalf of the difference of embodiment, itself and shown in Figure 6 the third be: be built in this crystal grain test tool 12 in the Temperature Detector 17 shown in Figure 7, and a Temperature Detector 16 shown in Figure 6 joins with crystal grain test tool 12.The end 19 of this crystal grain contactor 13 of Fig. 7 has a light to pass through path 37 between this Temperature Detector 17, when test one crystal grain (for example Fig. 7 crystal grain 2), end 19 these tested crystal grain of contact of this crystal grain contactor 13 pass through to arrive this Temperature Detector 17 so this light passes through the light of allowing that this tested crystal grain sends in path 37.This light passes through tool 12 can be all tested in path 37 at crystal grain outside, or some is in crystal grain test tool 12 outsides, another is partly in crystal grain test tool 12 inside, unique conditional: have a light to pass through the path and allow light that tested crystal grain sent advance to receive, and be measured the temperature of tested crystal grain by can be allowed Temperature Detector 17 by Temperature Detector 17 received light by Temperature Detector 17.
If with above-mentioned Fig. 6, this crystal grain test tool 12 of Fig. 7 is divided into a test bodies, one outstanding spicule (being equivalent to this crystal grain contactor 13), an and test terminal (end 19 that is equivalent to this crystal grain contactor 13), then this test bodies and this test end lays respectively at the two-phase heterodoxy of this outstanding spicule, just should test between the end between this test bodies and this by outstanding spicule, so satisfy a condition: make that this test is terminal to be given prominence between the spicule with being somebody's turn to do between its (just light passes through path 36 or 37) is a part of as long as this light passes through path 36 or 37 etc., when then testing a crystal grain, this tested crystal grain inevitable some be connected this light and pass through path 36 or 37, and the light that this tested crystal grain sent just can pass through light and pass through path 36 or 37 to arrive Temperature Detector 16 or 17.
Claims (28)
1. electronic assembly test system, at least one crystal grain for test one wafer is characterized in that,
This electronic assembly test system comprises:
One carrying tool is for this wafer of carrying;
One crystal grain test tool comprises a crystal grain contactor, and this crystal grain test tool is among both at least one such as the function of this crystal grain of test, quality, and this crystal grain contactor is for this crystal grain of contact; And
One Temperature Detector with this crystal grain distance of being separated by, measures the temperature of this crystal grain according to a kind of light that this crystal grain sent.
2. electronic assembly test system as claimed in claim 1 is characterized in that, wherein this Temperature Detector is to be an infrared temperature detecting device, and this infrared temperature detecting device receives the infrared ray that this crystal grain sends and measures the temperature of this crystal grain.
3. electronic assembly test system as claimed in claim 1 is characterized in that, wherein this carrying tool comprises a printing opacity partly at least, and this printing opacity partly between this crystal grain and this Temperature Detector, arrives this Temperature Detector for this light passes through.
4. electronic assembly test system as claimed in claim 3 is characterized in that, wherein this Temperature Detector has one at interval to this carrying.
5. electronic assembly test system as claimed in claim 3 is characterized in that, wherein this printing opacity partly is to be made of quartzy institute.
6. electronic assembly test system as claimed in claim 1 is characterized in that, wherein at least one position is arranged is a space to the straight line path of this Temperature Detector to this crystal grain.
7. electronic assembly test system as claimed in claim 6 is characterized in that, wherein this crystal grain test tool and this Temperature Detector space that is separated by.
8. electronic assembly test system as claimed in claim 6 is characterized in that, wherein this crystal grain test tool and this Temperature Detector join.
9. electronic assembly test system as claimed in claim 6 is characterized in that, wherein is built in this crystal grain test tool in this Temperature Detector.
10. electronic assembly test system as claimed in claim 1 is characterized in that, wherein this crystal grain test tool and this Temperature Detector join, and this crystal grain contactor has terminal this crystal grain of contact that supplies, and this end is to there being a light to pass through the path between this Temperature Detector.
11. electronic assembly test system as claimed in claim 10 is characterized in that, wherein to pass through the path be a space to this light.
12. electronic assembly test system as claimed in claim 10 is characterized in that, wherein to pass through the path be a columnar gap to this light, and the center line of this columnar gap is a straight line.
13. electronic assembly test system as claimed in claim 1 is characterized in that, wherein is built in this crystal grain test tool in this Temperature Detector, the end of this crystal grain contactor is to there being a light to pass through the path between this Temperature Detector.
14. electronic assembly test system as claimed in claim 13 is characterized in that, wherein to pass through the path be a space to this light.
15. electronic assembly test system as claimed in claim 13 is characterized in that, wherein to pass through the path be a columnar gap to this light, and the center line of this columnar gap is a straight line.
16. electronic assembly test system as claimed in claim 1 is characterized in that, more comprises a driver, in order to drive this carrying tool, makes this crystal grain arrive a tested position, this tested position is to a end that should the crystal grain contactor.
17. electronic assembly test system as claimed in claim 1 is characterized in that, more comprises an illuminator, in order to send a light beam, the temperature of this crystal grain is risen.
18. electronic assembly test system as claimed in claim 17 is characterized in that, wherein this carrying tool is a light-transmitting materials, and this light beam that this illuminator sends calorifies this wafer through this carrying tool.
19. electronic assembly test system as claimed in claim 1, it is characterized in that, more comprise a temperature compensator, wherein this Temperature Detector sends a temperature indication signal again, this crystal grain test tool sends a test mode indicator signal, this temperature compensator to should the test mode indicator signal, this temperature indication signal and calorify this crystal grain.
20. an electronic assembly test system, at least one crystal grain for test one wafer is characterized in that this electronic assembly test system comprises:
One carrying tool is for this wafer of carrying; And
One test tool, comprise a crystal grain tester and a Temperature Detector, this crystal grain tester is among both at least one such as the function of this crystal grain of test, quality, this crystal grain tester has terminal this crystal grain of contact that supplies, this end is to there being a light to pass through the path between this Temperature Detector, this light passes through the path and arrives this Temperature Detector in order to allow a kind of light that this crystal grain sends when this end contacts this crystal grain, and this Temperature Detector measures the temperature of this crystal grain according to this light.
21. an electronic assembly test system is characterized in that, comprises:
One carrying tool is for the carrying semiconductor; And
One test tool comprises a semiconductor tester and a Temperature Detector, and this semiconductor tester has an end, and this end is to there being a light to pass through the path between this Temperature Detector, and the size that this light passes through the path meets a light path setting value.
22. electronic assembly test system as claimed in claim 21 is characterized in that, wherein this semiconductor tester comprises a body and an outstanding spicule, and this outstanding spicule is between this body and this end.
23. electronic assembly test system as claimed in claim 22 is characterized in that, wherein this light path setting value satisfies a condition: make this end pass through the some in path and be somebody's turn to do between this light and give prominence between the spicule.
24. electronic assembly test system as claimed in claim 21, it is characterized in that, wherein this semiconductor tester has a function: obtain an attribute test record behind the test semiconductor, this Temperature Detector has a function: when this semiconductor tester is carried out test, pass through the path via this light and receive a kind of light, and obtain a measured temperature according to this light, this test tool sends a test result according to this attribute test record with this measured temperature.
25. electronic assembly test system as claimed in claim 21, it is characterized in that, wherein this semiconductor tester has an effect: obtain a functional test record behind the test semiconductor, this Temperature Detector has a function: when this semiconductor tester is carried out test, pass through the path via this light and receive a kind of light, and obtain a measured temperature according to this light, this test tool sends a test result according to this functional test record with this measured temperature.
26. electronic assembly test system as claimed in claim 21, it is characterized in that, wherein this Temperature Detector has a function: pass through the path via this light and receive a kind of light, and obtain a measured temperature according to this light, when this measured temperature is outside a temperature setting range, send a temperature compensation signal again.
27. an electronic assembly test system is characterized in that, comprises:
One electronic assembly tester, among both at least one of the function, quality etc. of test one electronic package, this electronic assembly tester has an end in order to contact an electronic package;
One Temperature Detector is measured the temperature of this electronic package in order to a kind of light that is sent according to an electronic package; And
One light passes through the path, and between this end and this Temperature Detector, the size that this light passes through the path meets a light path setting value.
28. electronic assembly test system as claimed in claim 27 is characterized in that, more comprises a carrying tool, for supporting an electronic package.
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| CN200510083533.1A CN1892196A (en) | 2005-07-08 | 2005-07-08 | Electronic component testing system |
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| CN200510083533.1A CN1892196A (en) | 2005-07-08 | 2005-07-08 | Electronic component testing system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103185855A (en) * | 2011-12-27 | 2013-07-03 | 英业达股份有限公司 | Test equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103185855A (en) * | 2011-12-27 | 2013-07-03 | 英业达股份有限公司 | Test equipment |
| CN103185855B (en) * | 2011-12-27 | 2016-02-10 | 英业达股份有限公司 | Testing equipment |
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