CN1886873A - 具有散热片的光电元件 - Google Patents
具有散热片的光电元件 Download PDFInfo
- Publication number
- CN1886873A CN1886873A CNA2004800351229A CN200480035122A CN1886873A CN 1886873 A CN1886873 A CN 1886873A CN A2004800351229 A CNA2004800351229 A CN A2004800351229A CN 200480035122 A CN200480035122 A CN 200480035122A CN 1886873 A CN1886873 A CN 1886873A
- Authority
- CN
- China
- Prior art keywords
- photoelectric cell
- temperature
- fin
- time constant
- variations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 8
- 238000005057 refrigeration Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims 1
- 230000005693 optoelectronics Effects 0.000 abstract 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10355602 | 2003-11-28 | ||
DE10355602.8 | 2003-11-28 | ||
DE102004004097.4 | 2004-01-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1886873A true CN1886873A (zh) | 2006-12-27 |
Family
ID=34625335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2004800351229A Pending CN1886873A (zh) | 2003-11-28 | 2004-11-24 | 具有散热片的光电元件 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN1886873A (de) |
DE (1) | DE102004004097A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007017113A1 (de) * | 2007-01-31 | 2008-08-07 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements |
DE102008057963A1 (de) * | 2008-11-19 | 2010-05-27 | Lorenzen, Dirk, Dr. | Strahlungsquelle mit einer Wärmeübertragungsvorrichtung und Verfahren zum Betrieb der Strahlungsquelle |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19506093C2 (de) * | 1995-02-22 | 2000-12-07 | Dilas Diodenlaser Gmbh | Diodenlaserbauelement |
DE10229712B4 (de) * | 2002-07-02 | 2009-06-25 | Jenoptik Laserdiode Gmbh | Halbleitermodul |
DE10234704A1 (de) * | 2002-07-30 | 2004-02-19 | Osram Opto Semiconductors Gmbh | Halbleitervorrichtung mit Kühlelement |
-
2004
- 2004-01-27 DE DE102004004097A patent/DE102004004097A1/de not_active Withdrawn
- 2004-11-24 CN CNA2004800351229A patent/CN1886873A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
DE102004004097A1 (de) | 2005-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1819377A (zh) | 具有可调节脉冲重复频率的无源q开关激光器 | |
US5548605A (en) | Monolithic microchannel heatsink | |
CN106067432B (zh) | 用于切割晶元的方法和设备 | |
CN1309826A (zh) | 激光系统的脉冲控制 | |
WO2007084341A3 (en) | Hysteretic mems thermal device and method of manufacture | |
CN1604410A (zh) | 激光二级管模块、激光器设备和激光加工设备 | |
US8599890B2 (en) | Systems and methods for laser pulse equalization | |
WO2006033909A3 (en) | Diode-pumped solid-state laser with self-maintained multi-dimensional optimization | |
WO2005081865A3 (en) | Power optimization for operation of optoelectronic device with thermoelectric cooler | |
WO2006133238A3 (en) | Method for cooling semiconductor laser diodes and light emitting diodes | |
CN101640372B (zh) | 一种单巴条液体制冷激光器及其制备方法 | |
JP2017056469A (ja) | レーザ加工方法及びレーザ加工装置 | |
CN1886873A (zh) | 具有散热片的光电元件 | |
CN101330195A (zh) | 一种大功率半导体激光器的烧结方法 | |
Lauer et al. | Advances in performance and beam quality of 9xx-nm laser diodes tailored for efficient fiber coupling | |
CN1447450A (zh) | 热电模块 | |
CN101640378B (zh) | 新型低成本水平阵列液体制冷半导体激光器及其制备方法 | |
CN1845401A (zh) | 半导体激光器泵浦光源的驱动方法 | |
Jing et al. | Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics | |
JP2007512690A (ja) | ヒートシンクを備えた発光光電素子 | |
CN201450226U (zh) | 新型低成本水平阵列液体制冷半导体激光器 | |
Feeler et al. | Reliability of high-power QCW arrays | |
Wolff et al. | Reliability of high-power diode laser bars in industrial applications | |
JP2010258432A (ja) | ペルチェ素子の駆動装置および駆動方法 | |
Lauer et al. | High power T-Bars with narrow in-plane far-field angle |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |