CN1886820A - Infrared radiating element and gas sensor using the same - Google Patents
Infrared radiating element and gas sensor using the same Download PDFInfo
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- CN1886820A CN1886820A CN 200480034906 CN200480034906A CN1886820A CN 1886820 A CN1886820 A CN 1886820A CN 200480034906 CN200480034906 CN 200480034906 CN 200480034906 A CN200480034906 A CN 200480034906A CN 1886820 A CN1886820 A CN 1886820A
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Abstract
Disclosed is an infrared light emitting device (A) comprising a semiconductor substrate (1), a heat insulating layer (2) having a heat conductivity sufficiently lower that that of the semiconductor substrate (1) and formed on one surface of the semiconductor substrate (1) in the thickness direction, a lamellar heating layer (3) having a heat conductivity and electrical conductivity higher than those of the heat insulating layer (2) and formed on the heat insulating layer (2), and a pair of pads (4) formed on the heating layer (3) for electrical conduction. The semiconductor substrate (1) is composed of a silicon substrate. The heat insulating layer (2) and the heating layer (3) are composed of porous silicon layers having different porosities, and the porous silicon layer for the heating layer (3) has a lower porosity than that for the heat insulating layer (2). By using such an infrared light emitting device (A) as the infrared radiation source in a gas sensor, there can be realized an infrared radiation source having a prolonged life.
Description
Technical field
The present invention relates to a kind of infrared radiating element and the gas sensor that uses it.
Background technology
Provide the analyzer of polytype use source of infrared radiation, for example infrared gas analyser.The typical source of infrared radiation that is used for this type of analyzer is a Halogen lamp LED.But, Halogen lamp LED is very big and the life-span is shorter, therefore is difficult to use it for the small-sized gas sensor that utilizes infra-red detection gas.
Therefore, as the source of infrared radiation that can miniaturization, the infrared radiating element that utilizes micro-processing technology to form (for example is developed in many places, referring to the open No.9-153640 of Japanese unexamined patent publication No. ([0027]-[0028] section, Fig. 2), the open No.2000-236110 of Japanese unexamined patent publication No. ([0017]-[0019] section, Fig. 1 and 2) and the open No.10-294165 of Japanese unexamined patent publication No. ([0014]-[0015] section, Fig. 1)).
In above patent document, disclosed a kind of infrared radiating element of so-called micro-bridge structure, it comprises support substrates and strides across the wire heater of described support substrates, and this support substrates is by using micro-processing technology and formed by silicon substrate etc. and being the form of rectangular frame.In infrared radiating element with this class micro-bridge structure, launch infrared ray by the Joule heat that produces for the energising of wire heater from the wire heater, and this infrared radiating element can be made response rapidly to the on/off state of the electric current of the heater of flowing through, because heater is surrounded by air, so the thermal capacity difference between heater and its environment can access increase.
But, in above-mentioned infrared radiating element with micro-bridge structure, heater is easy to breakage, and it may be melted by heat, because heater is linear, and only the supported substrate supports in two ends of heater.
Summary of the invention
In view of the above problems, the object of the present invention is to provide a kind of and conventional infrared radiating element to compare and can have long-life infrared radiating element, and the gas sensor that uses this kind infrared radiating element.
Infrared radiating element of the present invention comprises: Semiconductor substrate; The porous heat insulation layer is formed on the surface of described Semiconductor substrate and has the thermal conductivity littler than Semiconductor substrate; And be formed at heating layer on the described heat insulation layer, its have than the big thermal conductivity of described heat insulation layer and conductivity and when the energising emission infrared ray.
Therefore,, launch ultrared heating layer during energising and form flat shape and be supported on the porous heat insulation layer because in this infrared radiating element, thus the amount of infrared radiation might be improved, and might prolong the life-span of infrared radiating element.
Preferably, Semiconductor substrate is a silicon substrate, and heat insulation layer and heating layer are porous silicon layer, and heating layer has the porosity littler than heat insulation layer.More preferably, the porosity of heating layer is 2-45%, and the porosity of heat insulation layer is 40-80% and bigger more than 10% than heating layer.
More preferably, described heating layer is mixed with impurity, make conductivity become and be higher than described silicon substrate, and its temperature coefficient of resistance become on the occasion of.
Heating layer can be the carbon-coating with conductivity, perhaps has the amorphous silicon layer of conductivity by doping impurity.Preferably, described amorphous silicon layer higher doping content on having on the face side than heat insulation layer side.
Further preferably, on the surface of heating layer, form many projectioies and depression.
Further preferably, on the surface of described heating layer, pile up a plurality of layers, be used to limit the ultrared wave band that is transmitted into the outside.
Further preferably, on the apparent surface of Semiconductor substrate, pile up reflectance coating, described reflectance coating will be from heating layer to the infrared reflection of semiconductor-substrate side emission to the heating layer side.
Further preferably, on the apparent surface of Semiconductor substrate, provide the thermal insulation member of thermal conductivity less than Semiconductor substrate.
Further preferably, heating layer is formed on the heat insulation layer via the insulating barrier of conductivity less than described heat insulation layer.
Description of drawings
Fig. 1 is the schematic sectional view according to the infrared radiating element of the embodiment of the invention.
Fig. 2 is used to explain the ultrared figure that is launched by the infrared radiating element of Fig. 1.
Fig. 3 is the circuit diagram that drive circuit one example of the infrared radiating element that is used for Fig. 1 is shown.
Fig. 4 A is the amplification sectional view of preferable shape of heating layer of the infrared radiating element of Fig. 1.
Fig. 4 B is the amplification sectional view of preferable shape of heating layer of the infrared radiating element of Fig. 1.
Fig. 5 A is the figure of preferable shape of heating layer that is used for the infrared radiating element of key-drawing 1.
Fig. 5 B is the figure of preferable shape of heating layer that is used for the infrared radiating element of key-drawing 1.
Fig. 6 is the schematic sectional view of infrared radiating element according to the preferred embodiment of the invention.
Fig. 7 is the schematic sectional view of infrared radiating element according to the preferred embodiment of the invention.
Fig. 8 is the schematic sectional view of infrared radiating element according to the preferred embodiment of the invention.
Fig. 9 is the schematic sectional view of infrared radiating element according to the preferred embodiment of the invention.
Figure 10 is the basic configuration figure of the gas sensor of use infrared radiating element of the present invention.
Embodiment
To be described in greater detail with reference to the attached drawings infrared radiating element of the present invention (A) hereinafter.
Infrared radiating element of the present invention (A) is a kind of by launching ultrared infrared radiating element for heating layer 3 energisings heating heating layer 3 from heating layer 3.In infrared radiating element (A), heat insulation layer 2 be formed at Semiconductor substrate 1 along on the surface of thickness direction (promptly, on the upper surface among Fig. 1), this heat insulation layer 2 porous and have fully little thermal conductivity than Semiconductor substrate 1, heating layer 3 is formed on the heat insulation layer 2, and heating layer 3 has bigger thermal conductivity and bigger conductivity for thin layer (plane) form and than heat insulation layer 2, and the paired pad that is used to switch on (electrode) 4 is formed at heating layer 3.Semiconductor substrate 1 has rectangular planar shape, and heat insulation layer 2 and heating layer 3 also all have rectangular planar shape.Paired pad 4 is made by the metal material such as gold, and contacts with heating layer 3 at the two ends of heating layer 3.
As for the yardstick of infrared radiating element (A), for example, the thickness of Semiconductor substrate 1 is 625 μ m before forming heat insulation layer 2 and heating layer 3, and the thickness of heat insulation layer 2 is 50 μ m, and the thickness of heating layer 3 is 1 μ m, and the thickness of pad 4 is 0.1 μ m.Preferably, the thickness of heat insulation layer 2 is 50 μ m or bigger, and the thickness of heating layer 3 is 3 μ m or littler.
In the infrared radiating element (A) of as above configuration, because the heating layer 3 as heater is forms of plane (thin layer), and be the form of line unlike conventional infrared radiating element, therefore can increase ultrared emission measure, and therefore can prolong the life-span of infrared radiating element by the amount of radiation that reduces per unit area.In addition, because the whole surface of heating layer 3 all is supported on the heat insulation layer 2, so compare with all supported conventional structure in linear heater two ends, heating layer 3 is damaged hardly, therefore can prolong the life-span of infrared radiating element.Moreover, supported because heating layer 3 has the heat insulation layer 2 of high porosity, thus heating layer 3 near supported under the conditions of air, the thermal capacity difference between heating layer 3 and the environment becomes big thus, infrared radiating element can have good thermo-responsive.
In infrared radiating element (A), from the temperature decision according to heating layer 3 of the ultrared peak wavelength of heating layer 3 emission, peak wavelength can be expressed by following equation:
λ=2898/T (equation 1)
Wherein λ represents peak wavelength, and T represents the absolute temperature [K] of heating layer 3.
That is, in this embodiment, constitute pseudo-black matrix as first porous silicon layer of heating layer 3, and the absolute temperature of heating layer 3 and meet Wien (Wien) displacement law from the ultrared peak wavelength of heating layer 3 emissions.For example, when the degree of depth with each micropore of first porous silicon layer is set at three times of internal diameter of each micropore or when bigger, then heating layer 3 can be regarded as the ultrared pseudo-black matrix of emission, as black body radiation.Therefore, as shown in Figure 2, be applied to the voltage between the paired pad 4 and change the absolute temperature T (that is, by changing the Joule heat that produces by heating layer 3) of heating layer 3 from external source, can change from the ultrared peak wavelength of heating layer 3 emissions by modulation.For example, when the voltage of about 300V is applied between the paired pad 4, can emission peak wavelength be the infrared ray of about 3 μ m-4 μ m.
In addition, when at room temperature (300[K]) when input power is applied to heating layer 3, the temperature lift-off value Δ T[K of heating layer 3] can express in order to following equation:
Δ T=2fe/ β (equation 2)
Wherein the f representative is applied to the input power of heating layer 3, and e represents the emissivity of heating layer 3, and β represents the thermal conductivity [W/K] of heating layer 3.
For example, when the absolute temperature T of heating layer 3 is 700[K] time, can obviously find out from equation 1, be about 4 μ m from the ultrared peak wavelength λ of heating layer 3 emissions, and can know from Fig. 2 and to find out, along with the absolute temperature T rising of heating layer 3, peak wavelength λ moves to short wavelength side, and the ultrared radiant energy of 4 mum wavelengths increases.Therefore, when forming heating layer 3 to meet following relation:
ΔT＝2fe/β≥400
∴β≤fe/200，
Just might give off the infrared ray of 4 mum wavelengths of higher radiant energy.
As for the input voltage that gives heater 3, the frequency f of the alternating voltage that heater 3 can respond [Hz] (in other words, the temperature of heater 3 can change in response to input voltage frequency) can be expressed by following equation:
F=a/ (π Qt
2) (equation 3)
T[m wherein] thickness of expression heat insulation layer 2, a[W/ (mK)] thermal conductivity of expression heat insulation layer 2, Q[J/ (m
3K)] thermal capacity of expression heater 3.
Therefore, when forming heat insulation layer 2 when meeting following the relation:
f＝a/(πQt
2)≥10
∴a≥10πQt
2
Just might make frequency (f) be 10Hz or higher.
Fig. 3 shows an example of the drive circuit that is used to drive infrared radiating element (A).In this drive circuit, stride power supply 21 and connect the series circuit of thyristor Th, inductor L, resistor R 1 and resistor R 2, and stride resistor R 2 connection infrared radiating elements (A).Power supply 21 comprises DC power supply and strides the capacitor that DC power supply is connected.Drive circuit also has controller 22, exports control signal to the grid of thyristor when the voltage of this controller 22 at the capacitor two ends of power supply 21 surpasses predetermined threshold.When slave controller 22 during to thyristor output control signal, thyristor Th is unlocked, and applies voltage thus between the pad 4 of infrared radiating element (A), and heating layer 3 heatings are the emission infrared ray also.By the threshold value of appropriate change controller 22, might change the voltage that is applied to infrared radiating element (A), therefore might control from the ultrared peak wavelength of infrared radiating element (A) emission.
In a preferred embodiment, heavy doping impurity in heating layer 3, make the conductivity of heating layer 3 become to be higher than Semiconductor substrate 1 and temperature coefficient of resistance become on the occasion of.Usually, porous silicon layer has high resistivity, and temperature coefficient of resistance be on the occasion of, so need between paired pad 4, apply high voltage with the heating porous silicon layer.And in addition, the electric current of paired pad 4 increases rapidly because the resistance of porous silicon layer along with temperature raises and step-down, is therefore flowed through, and hot controllability is by deterioration.Therefore, by heavy doping impurity in heating layer 3 so as the conductivity of heating layer 3 to be become be higher than Semiconductor substrate 1 and temperature coefficient of resistance become on the occasion of, the resistance of heating layer 3 raises along with temperature and increases, the current value that flows to heating layer 3 reduces, and becomes thus to be easy to control the temperature of heating layer 3.Specifically, for example, after forming first porous silicon layer and second porous silicon layer, by the ion injection foreign ion is injected first porous silicon layer and carry out annealing in process.By just can forming like this heavy doping zone of heating of the character with low-resistivity and metalloid, this character promptly has than the high conductivity of Semiconductor substrate 1 and has the character of positive temperature coefficient of resistance.Annealing in process can be undertaken by implanting impurity ion in the plan part of first porous silicon layer before forming first porous silicon layer and second porous silicon layer.Perhaps, if the temperature coefficient of resistance of heating layer 3 is positive, preferably utilize constant-current supply between pad 4, to flow through electric current as power supply.In this case, although the resistance of heating layer 3 reduces along with the rising of heating layer 3 temperature, hot controllability is improved, because the voltage between the pad 4 has also reduced.
Further preferably in the surface of heating layer 3, form for example many projectioies and the depression shown in Fig. 4 A and 4B by etching etc.In this case, the surface area of heating layer 3 increases, and might increase thus from the amount of the infrared radiation of heating layer 3 emissions.
Further preferably, form infrared radiating element and make the degree of depth of each micropore become 1/4 of peak wavelength λ, wherein micropore is that the part of the Semiconductor substrate 1 that formed by silicon substrate by anodic oxidation obtains.For example, shown in Fig. 5 A and 5B, use after the alkaline solution etching anodic oxidation just comprise KOH etc. and wherein the surface of the porous silicon layer 3 ' that is not exposed of loose structure (that is porosity that should the surface is little), make the depth H of each micropore become λ/4.In this case, can improve the amount of infrared radiation by the light wave effect.
As shown in Figure 6, further preferably on the surface of heating layer 3, pile up a plurality of layers 5, be used to limit the ultrared wave band that is transmitted into the outside.In this case, the infrared ray that this a plurality of layer 5 only can the transmission specific band, and the infrared radiation that can limit the wavelength outside the specific band is to outside.
As shown in Figure 7, further preferably, pile up reflectance coating 6 on the lower surface of Semiconductor substrate 1, it comprises multilayer and the infrared ray of launching from heating layer 3 to heating layer 3 one lateral reflections.More preferably, in Semiconductor substrate 1, form hollow space 1b.Medium among the hollow space 1b is an air.In this case, shown in the arrow among Fig. 7, be reflected coating 6 reflections to heating layer 3 one sides to the infrared ray of Semiconductor substrate 1 one sides emissions, can increase thus from the amount of the infrared radiation of the surface emitting of heating layer 3 from heating layer 3.Reflectance coating 6 is not limited to multilayer, but can be formed by the metal film of reflected infrared ray.
As shown in Figure 8, further preferably, the thermal insulation member 7 that thermal conductivity is littler than Semiconductor substrate is provided on the lower surface of Semiconductor substrate 1, and thermal insulation member 7 is fixed to basal component 8 by the adhesive that is used for chips incorporate.If by chips incorporate infrared radiating element (A) is fixed to basal component such as the metallic matrix of potting dress and lead frame, some heat that produce in the heating layer 3 may be dispersed into the certain thickness of heat insulation layer 2 by heat insulation layer 2, Semiconductor substrate 1 and basal component.This heat radiation may cause the response speed deterioration when zone of heating 3 energisings.Therefore,, apparent surface's heat radiation can be suppressed, therefore response speed can be improved from Semiconductor substrate 1 by thermal insulation member 7 is provided.Thermal insulation member 7 can be the insulating glass substrate, perhaps the porous silicon layer (porous semiconductor layer) that forms of the part of the apparent surface by for example anodic oxidation Semiconductor substrate 1.
As shown in Figure 9, heating layer 3 can be formed on the heat insulation layer 2 via the insulating barrier 9 of conductivity less than heat insulation layer 2.By insulating barrier 9 is provided, the leakage current of the Semiconductor substrate 1 of flowing through in the time of can being suppressed to heating layer 3 energisings more can improve response speed thus and reduce power consumption.As the material of insulating barrier 9,, then can adopt SiO if silicon substrate is used as Semiconductor substrate 1
2, Si
3N
4Deng.
Figure 10 shows with the gas sensor of infrared radiating element (A) as the source of infrared radiation.This gas sensor comprises: the shell 13 that is filled with gas; The source of infrared radiation 11, it has infrared radiating element (A) and is used for infrared to the shell 13 that is filled with gas; Light receiving element 12 is used to receive the infrared ray that passes the shell 13 that is filled with gas; Two speculums 14 and 15, they are placed in the shell 13 that is filled with gas relative to one another, in order to reflected infrared ray, make light receiving element 12 can receive from the source of infrared radiation 11 and are transmitted into infrared ray the shell 13 that is filled with gas; The control circuit (not shown) is used to control the output (amount of radiation, radiated time etc.) of the source of infrared radiation 11, and is used for calculating gas concentration based on the output of light receiving element 12; And the display (not shown), be used to show the gas concentration that calculates by control circuit.This gas sensor comes the concentration of target gas by the ultrared absorptivity of measuring absorbing wavelength, and wherein absorbing wavelength is by the molecular structure decision of object gas.
Because this gas sensor has been equipped infrared radiating element (A) as the source of infrared radiation 11, so might prolong the life-span of whole sensor.In addition, because infrared radiating element (A) is very sensitive, amount of radiation reaches the used time of scheduled volume and is shortened in predetermined space, and light receiving element 12 can be exported the accurate signal corresponding to concentration.If control circuit is equipped with the wavelength regulation device and is used to change the voltage that is applied to heating layer 3 and changes from the Infrared wavelength of heating layer 3 emission, just can measure the concentration of multiple gases.
Though heating layer 3 is based on porous silicon formation in above explanation, heating layer 3 is not limited to this.For example, the angle consideration from improving thermal endurance and mechanical strength and reducing resistance can form heating layer 3 by the carbon-coating that has conductivity by doping.As carbon-coating, can adopt the multiple carbon-coating that comprises amorphous carbon, graphite, class graphitic carbon, diamond and diamond-like-carbon.Especially, when adopting graphite or class graphitic carbon, compare, might reduce the resistance of carbon-coating with the situation that adopts amorphous carbon, diamond and diamond-like-carbon.
Perhaps, consider, can form heating layer 3 by the amorphous silicon layer that has conductivity by doping from the angle of improving mechanical strength and reduction resistance.Preferably, amorphous silicon layer has higher doping impurity concentration in its face side than on heat insulation layer 2 one sides.In this case, the electrorheological of the heating layer 3 of flowing through must be easy to flow on the face side of heating layer 3, thereby compares the effective thickness attenuation of heating layer 3 and can improve response with the situation that whole amorphous silicon layer evenly mixes.As substituting of amorphous silicon layer, can adopt the noncrystal semiconductor layer of making by the semi-conducting material except that Si.
Though being used as the conduction type of the silicon substrate of Semiconductor substrate 1 can be P type or N type, the preferred P type silicon substrate that uses is as Semiconductor substrate 1, because P type silicon substrate is easy to have big porosity when making loose structure by anodic oxidation.Current density in the time of can suitably determining anodic oxidation Semiconductor substrate 1 part according to the conduction type of Semiconductor substrate 1 and conductivity.
The material of Semiconductor substrate 1 is not limited to Si, can also be the semi-conducting material that another kind can become porous by anodic oxidation, for example Ge, SiC, GaP, GaAs and InP.
Claims (13)
1. infrared radiating element comprises:
Semiconductor substrate;
Be formed at the lip-deep porous heat insulation layer of described Semiconductor substrate, described heat insulation layer has the thermal conductivity littler than described Semiconductor substrate;
Be formed on the described heat insulation layer and by energising and launch ultrared heating layer, described heating layer has thermal conductivity and the conductivity bigger than described heat insulation layer.
2. infrared radiating element as claimed in claim 1, wherein
Described Semiconductor substrate is a silicon substrate,
Described heat insulation layer and described heating layer are porous silicon layer,
Described heating layer has the porosity littler than described heat insulation layer.
3. infrared radiating element as claimed in claim 2, wherein
The porosity of described heating layer is 2-45%,
The porosity of described heat insulation layer is 40-80% and bigger more than 10% than the porosity of described heating layer.
4. infrared radiating element as claimed in claim 2, wherein
Described heating layer is mixed with impurity, makes conductivity become to be higher than described silicon substrate, and its temperature coefficient of resistance become on the occasion of.
5. infrared radiating element as claimed in claim 1, wherein
Described heating layer is formed by the carbon-coating with conductivity.
6. infrared radiating element as claimed in claim 1, wherein
Described heating layer is formed by the amorphous silicon layer that has conductivity by doping.
7. infrared radiating element as claimed in claim 6, wherein
Described amorphous silicon layer higher doping content on having on the face side than heat insulation layer side.
8. infrared radiating element as claimed in claim 1, wherein
In the surface of described heating layer, form many projectioies and depression.
9. infrared radiating element as claimed in claim 1, wherein
A plurality of layers are stacked on the surface of described heating layer, are used to limit the ultrared wave band that is transmitted into the outside.
10. infrared radiating element as claimed in claim 1, wherein
Reflectance coating is stacked on the apparent surface of described Semiconductor substrate,
Described reflectance coating will be from described heating layer to the infrared reflection of semiconductor-substrate side emission to the heating layer side.
11. infrared radiating element as claimed in claim 1, wherein
On the apparent surface of described Semiconductor substrate, provide the thermal insulation member of thermal conductivity less than described Semiconductor substrate.
12. infrared radiating element as claimed in claim 1, wherein
Described heating layer is formed at less than the insulating barrier of described heat insulation layer on the described heat insulation layer via conductivity.
13. a gas sensor comprises:
The source of infrared radiation is used for launching infrared ray at predetermined space;
Optical pickup apparatus is used to receive described infrared ray;
Control device utilizes the absorption of object gas to judge based on the output of described optical pickup apparatus and has or not object gas;
Wherein
The described source of infrared radiation is an infrared radiating element as claimed in claim 1.
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|---|---|---|---|
| JP2003366366 | 2003-10-27 | ||
| JP366366/2003 | 2003-10-27 | ||
| JP156835/2004 | 2004-05-26 |
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|---|---|
| CN1886820A true CN1886820A (en) | 2006-12-27 |
| CN100562971C CN100562971C (en) | 2009-11-25 |
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| US8345896B2 (en) | 2008-12-30 | 2013-01-01 | Beijing Funate Innovation Technology Co., Ltd. | Thermoacoustic device |
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| CN102034467B (en) * | 2009-09-25 | 2013-01-30 | 北京富纳特创新科技有限公司 | Sound production device |
| US8249280B2 (en) | 2009-09-25 | 2012-08-21 | Beijing Funate Innovation Technology Co., Ltd. | Thermoacoustic device |
| US8494187B2 (en) | 2009-11-06 | 2013-07-23 | Tsinghua University | Carbon nanotube speaker |
| US8457331B2 (en) | 2009-11-10 | 2013-06-04 | Beijing Funate Innovation Technology Co., Ltd. | Thermoacoustic device |
| US8811631B2 (en) | 2009-11-16 | 2014-08-19 | Beijing Funate Innovation Technology Co., Ltd. | Thermoacoustic device |
| CN103229590A (en) * | 2010-10-12 | 2013-07-31 | 马克卡车公司 | Heated sensor element for mixed gas and liquid environments |
| CN104272086A (en) * | 2012-05-09 | 2015-01-07 | 松下知识产权经营株式会社 | Infrared radiation element |
| CN104142359A (en) * | 2014-07-18 | 2014-11-12 | 苏州能斯达电子科技有限公司 | MEMS gas sensor and machining method thereof |
| CN104142359B (en) * | 2014-07-18 | 2016-08-31 | 苏州能斯达电子科技有限公司 | A kind of MEMS gas sensor and processing method thereof |
| CN108291743A (en) * | 2015-10-26 | 2018-07-17 | 京瓷株式会社 | Hot light inverting element |
| US10408499B2 (en) | 2015-10-26 | 2019-09-10 | Kyocera Corporation | Thermophoto conversion element |
| CN108291743B (en) * | 2015-10-26 | 2020-02-18 | 京瓷株式会社 | Thermo-optic conversion element |
| CN109688648A (en) * | 2019-01-09 | 2019-04-26 | 江苏华旦科技有限公司 | A kind of infrared emittance |
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