CN1885369A - Glue sealing method and glue sealing structure for preventing moisture infiltration - Google Patents
Glue sealing method and glue sealing structure for preventing moisture infiltration Download PDFInfo
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- CN1885369A CN1885369A CN 200510079098 CN200510079098A CN1885369A CN 1885369 A CN1885369 A CN 1885369A CN 200510079098 CN200510079098 CN 200510079098 CN 200510079098 A CN200510079098 A CN 200510079098A CN 1885369 A CN1885369 A CN 1885369A
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Abstract
The invention relates to a sealing method and sealing structure, for avoiding water gas penetration, wherein said sealing method comprises: first, using frame adhesive to connect two base plates with micrometer space between them; then using the first sealing adhesive with low-viscosity to fill said space and cover part exposed circuit on one base board; then, using the second sealing adhesive to cover the first sealing adhesive and cover another exposed circuit on the base plate; therefore, the dual-layer sealing adhesive can fully be filled into the space to confirm the reliability test. With said invention, the product quality will be not affected, when used in high-temperature high-wet condition.
Description
Technical field
The present invention relates to a kind of glue sealing method and glue sealing structure that is used to prevent the aqueous vapor infiltration, especially refer to that a kind of first road sealing by low-viscosity with after being filled in the micron order gap between two substrates, relends by the second road sealing to be covered in glue sealing method and the glue sealing structure that aqueous vapor is infiltrated that prevent in this first road sealing.
Background technology
Present stage flat display module sealing manufacturing process all uses silicones (silicone) or silica gel (tuffy) to protect integrated circuit to engage the exposed external electrode circuit in (IC Bonding) (for example: COG, TAB, COF etc.) back; stoping the aqueous vapor infiltration or external force injures the electrode circuit and cause electric conductivity bad, and then guarantee the fiduciary level that product uses.
Generally speaking, known manufacturing process is utilized artificial hand to be coated with mode silicones or silica gel is coated the electrode circuit exposed part of product after the integrated circuit joint is finished, and makes the sclerosis of glue material to protect exposed external electrode circuit after leaving standstill a period of time.
Yet product is under the state of hot and humid operation, and Chang Rongyi is not good because of the moisture resistance of adhesive material (Silicone orTuffy), makes the electrode circuit be subjected to the infiltration of aqueous vapor, and produces the phenomenon of galvanic corrosion and the situation that opens circuit; Perhaps because of aqueous vapor infiltration influence, cause separating out of material and form the situation of two line shorts.
See also shown in Figure 1, its be between known two plate bases with the glue sealing structure synoptic diagram of chip.By among the figure as can be known, known panel manufacturing process all can produce the micron order gap A that varies in size after two plate base 1a, 2a engage by frame glue 3a, generally speaking be about 5～7 microns (μ m) in STN Super TN type (STN), thin film transistor (TFT) (TFT) or low tempterature poly silicon (LTPS) manufacturing process; In Organic Light Emitting Diode (OLED) manufacturing process, be about 10～20 microns (μ m).In addition, the mode of utilizing integrated circuit to engage is engaged in a chip 4a on this substrate 2a, and one sealing 5a is covered on the exposed external electrode circuit.
Yet, in subsequent module sealing manufacturing process, on business know the relation of the glue material characteristic of sealing 5a, and can't really this micron-sized micron order gap A be filled up, so when reliability testing (hot and humid operation), aqueous vapor (can't be filled up the space that is produced with this gap A) easily by this path and be infiltrated, and damages phenomenon and produce circuit.
Therefore, as from the foregoing, with the glue sealing method and the glue sealing structure of chip, on reality is used, obviously have inconvenience and defective, and remain to be improved between above-mentioned known two plate bases.
Summary of the invention
In order to address the above problem, the invention provides a kind of glue sealing method and glue sealing structure that is used to prevent the aqueous vapor infiltration, to guarantee product reliability in the use.At first, the present invention adopts the first road UV glue (the urethane acrylate oligomer mixes (Polyurethane acrylate oligomer mixture) series), filling the micron order gap between two substrate films, and through specific UV cured (UV-cured) manufacturing process with this first road UV glue that hardens; Then, reach other exposed external electrode circuit with the second road sealing (can be Silicone/Tuffy/UV glue) on the first road UV glue to cover.But the therefore micron order gap between the present invention's complete filling two substrates, and more can guarantee the reliability of products test by this double-deck sealing mode, even use under hot and humid environment, the quality of product can not be affected yet.
For solving the problems of the technologies described above, according to wherein a kind of scheme of the present invention, provide a kind of glue sealing method that is used to prevent the aqueous vapor infiltration, its step comprises: at first, to connect two plate bases, wherein produce micron-sized gap by frame glue between this two plate base; Then, be exposed to circuit on the substrate wherein by the first road sealing of a low-viscosity to fill the gap between this two plate base and to cover a part; Then, be exposed to circuit on the substrate wherein by one second road sealing to be covered in this first road sealing and to cover another part.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this substrate is face glass (glass panel) or colored filter (color filter).
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this micron-sized gap is about 5～7 microns (μ m) in STN Super TN type (STN), thin film transistor (TFT) (TFT) or low tempterature poly silicon (LTPS) manufacturing process.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this micron-sized gap is about 10～20 microns (μ m) in Organic Light Emitting Diode (OLED) manufacturing process.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein the viscosity of this first road sealing and this second road sealing is all 100-300 centipoise (cp).
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, this first road sealing ultraviolet photo-curing glue that is low-viscosity wherein, this ultraviolet photo-curing glue is UV glue that the urethane acrylate oligomer mixes (Polyurethane acrylate oligomer mixture) series.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, after wherein this first road sealing is finished, further comprise step: by specific UV cured (UV-cured) manufacturing process, with this first road sealing of hardening of ultraviolet light (UV) radiation modality.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this first road sealing be low-viscosity silicones (silicone) or silica gel (tuffy).
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this second road sealing is silicones (silicone), silica gel (tuffy) or ultraviolet photo-curing glue (UV glue).
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this first road sealing and the second road sealing are all the ultraviolet photo-curing glue (UV glue) of low-viscosity.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, after wherein this second road sealing is finished, further comprise step: by specific UV cured (UV-cured) manufacturing process, with ultraviolet light (UV) radiation modality harden this first road sealing and this second road sealing.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, before wherein this first road sealing is filled, further comprise step: with a chip join therein on the substrate.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this frame glue is to be arranged between this two plate base in the mode around sealing.
For solving the problems of the technologies described above, according to wherein a kind of scheme of the present invention, provide a kind of glue sealing method that is used to prevent the aqueous vapor infiltration, its step comprises: at first, to connect two plate bases, wherein produce micron-sized gap by frame glue between this two plate base; Then, be exposed to circuit on the substrate wherein by the ultraviolet photo-curing glue (UV glue) of a low-viscosity to fill the gap between this two plate base and to cover a part; Then, by specific UV cured (UV-cured) manufacturing process, with ultraviolet light (UV) radiation modality this ultraviolet photo-curing glue that hardens; At last, be exposed to circuit on the substrate wherein by one second road sealing to be covered in this first road sealing and to cover another part.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this substrate is face glass (glass panel) or colored filter (color filter).
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this micron-sized gap is about 5～7 microns (μ m) in STN Super TN type (STN), thin film transistor (TFT) (TFT) or low tempterature poly silicon (LTPS) manufacturing process.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this micron-sized gap is about 10～20 microns (μ m) in Organic Light Emitting Diode (OLED) manufacturing process.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein the viscosity of this first road sealing and this second road sealing is all 100-300 centipoise (cp).
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this second road sealing is silicones (silicone), silica gel (tuffy) or ultraviolet photo-curing glue (UV glue).
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, after wherein this second road sealing is finished, further comprise step: by specific UV cured (UV-cured) manufacturing process, with this second road sealing of hardening of ultraviolet light (UV) radiation modality.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, before wherein this first road sealing is filled, further comprise step: with a chip join therein on the substrate.
Prevent the glue sealing method that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this frame glue is to be arranged between this two plate base in the mode around sealing.
For solving the problems of the technologies described above, according to wherein a kind of scheme of the present invention, provide a kind of glue sealing structure that is used to prevent the aqueous vapor infiltration, it comprises: first road sealing of at least two plate bases, frame glue, a low-viscosity and one second road sealing.Wherein, this frame glue is around being arranged between this two plate base, and produces micron-sized gap between this two plate base; The first road sealing of this low-viscosity is filled in the gap between this two plate base and covers a part and is exposed to circuit on the substrate wherein; And this second road sealing is covered on this ultraviolet photo-curing glue and covers another part and is exposed to the wherein circuit of a substrate.
Prevent the glue sealing structure that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this substrate is face glass (glass panel) or colored filter (color filter).
Prevent the glue sealing structure that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this micron-sized gap is about 5～7 microns (μ m) in STN Super TN type (STN), thin film transistor (TFT) (TFT) or low tempterature poly silicon (LTPS) manufacturing process.
Prevent the glue sealing structure that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this micron-sized gap is about 10～20 microns (μ m) in Organic Light Emitting Diode (OLED) manufacturing process.
Prevent the glue sealing structure that aqueous vapor is infiltrated according to above-mentioned being used to, wherein the viscosity of this first road sealing and this second road sealing is all 100-300 centipoise (cp).
Prevent the glue sealing structure that aqueous vapor is infiltrated according to above-mentioned being used to, this first road sealing ultraviolet photo-curing glue (UV glue) that is low-viscosity wherein, this second road sealing is silicones (silicone) or silica gel (tuffy).
Prevent the glue sealing structure that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this first road sealing and the second road sealing are all the silicones (silicone) or the silica gel (tuffy) of low-viscosity.
Prevent the glue sealing structure that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this first road sealing and the second road sealing are all the ultraviolet photo-curing glue (UV glue) of low-viscosity.
Prevent the glue sealing structure that aqueous vapor is infiltrated according to above-mentioned being used to, comprise that further one is bonded on the chip on the substrate wherein.
Prevent the glue sealing structure that aqueous vapor is infiltrated according to above-mentioned being used to, wherein this frame glue is to be arranged between this two plate base in the mode around sealing.
Reach technology, means and the effect that predetermined purpose is taked for further illustrating the present invention, see also following about detailed description of the present invention and accompanying drawing, purpose of the present invention, feature and characteristics can obtain deeply and concrete understanding thus, yet accompanying drawing only provides reference and explanation usefulness, is not to be used for the present invention is limited.
Description of drawings
Fig. 1 be between known two plate bases with the glue sealing structure of chip;
Fig. 2 is the synoptic diagram that the present invention is used to prevent the glue sealing structure that aqueous vapor is infiltrated;
Fig. 3 is the process flow diagram that the present invention is used to prevent first embodiment of the glue sealing method that aqueous vapor is infiltrated;
Fig. 4 is the process flow diagram that the present invention is used to prevent second embodiment of the glue sealing method that aqueous vapor is infiltrated; And
Fig. 5 is the process flow diagram that the present invention is used to prevent the 3rd embodiment of the glue sealing method that aqueous vapor is infiltrated.
Wherein, description of reference numerals is as follows:
Known:
1a, 2a substrate 3a frame glue 4a chip
5a sealing A micron order gap
The present invention:
1,2 substrates, 3 frame glue, 4 chips
5 first road sealings, 6 second road sealing A micron order gaps
Embodiment
See also shown in Figure 2ly, it is the synoptic diagram that the present invention is used to prevent the glue sealing structure that aqueous vapor is infiltrated.By among the figure as can be known, the invention provides a kind of glue sealing structure that is used to prevent that aqueous vapor from infiltrating, it includes: at least two plate bases 1,2, frame glue 3, first road sealing 5 of at least one chip 4, one low-viscosities and one second road sealing 6.
Wherein, this substrate 1,2 can be face glass (glass panel) or colored filter (colorfilter).This frame glue 3 is to be arranged at 1,2 of this two plate bases in the mode around sealing, wherein 1,2 of this two plate bases produce micron-sized gap A, and this micron-sized gap A is about 5～7 microns (μ m) in STN Super TN type (STN), thin film transistor (TFT) (TFT) or low tempterature poly silicon (LTPS) manufacturing process; This micron-sized gap is about 10～20 microns (μ m) in Organic Light Emitting Diode (OLED) manufacturing process.In addition, the mode that this chip 4 can utilize integrated circuit to engage is to be engaged on this substrate 2.
Moreover the first road sealing 5 of this low-viscosity is filled in the micron order gap A of 1,2 of this two plate bases and is covered in a part and is exposed to circuit on this substrate 2.This second road sealing 6 is covered in this first road sealing 5 and covers the circuit that another part is exposed to this substrate 2.Wherein, this first road sealing 5 can be the ultraviolet photo-curing glue (UV glue) of low-viscosity, and this second road sealing 6 can be silicones (silicone) or silica gel (tuffy); Or this first road sealing 5 and the second road sealing 6 are all the silicones (silicone) or the silica gel (tuffy) of low-viscosity; Or this first road sealing 5 and the second road sealing 6 be all the ultraviolet photo-curing glue (UV glue) of low-viscosity, and wherein this ultraviolet photo-curing glue is UV glue that the urethane acrylate oligomer mixes (Polyurethane acrylate oligomer mixture) series.In addition, the viscosity of this first road sealing 5 and this second road sealing 6 is all 100-300 centipoise (cp).
See also shown in Figure 3ly, it is the process flow diagram that the present invention is used to prevent first embodiment of the glue sealing method that aqueous vapor is infiltrated.By in the process flow diagram as can be known, the invention provides a kind of glue sealing method that is used to prevent that aqueous vapor from infiltrating, its step comprises: at first, to connect two plate bases 1,2, wherein 1,2 of this two plate bases produce micron-sized gap A (S100) by frame glue 3; Then, the first road sealing 5 by a low-viscosity also covers a part of circuit (S102) that is exposed on this substrate 2 with the gap A that fills 1,2 of this two plate bases; Then, be exposed to circuit (S104) on this substrate 2 by one second road sealing 6 to be covered in this first road sealing 5 and to cover another part.Wherein, this first road sealing 5 and this second road sealing 6 all can be by selecting arbitrarily among silicones (silicone), silica gel (tuffy) or ultraviolet photo-curing glue (UV glue) three of low-viscosity, this twice sealing 5,6 can be identical glue material, also can be different glue materials.In addition, before this first road sealing 5 is filled, further comprise step: a chip 4 is bonded on this substrate 2.
See also shown in Figure 4ly, it is the process flow diagram that the present invention is used to prevent second embodiment of the glue sealing method that aqueous vapor is infiltrated.By in the process flow diagram as can be known, the invention provides a kind of glue sealing method that is used to prevent that aqueous vapor from infiltrating, its step comprises: at first, to connect two plate bases 1,2, wherein 1,2 of this two plate bases produce micron-sized gap A (S200) by frame glue 3; Then, the ultraviolet photo-curing glue (UV glue) by a low-viscosity also covers a part of circuit (S202) that is exposed on this substrate 2 with the gap A that fills 1,2 of this two plate bases; Then, by specific UV cured (UV-cured) manufacturing process, with the harden ultraviolet photo-curing glue (S204) of this low-viscosity of ultraviolet light (UV) radiation modality; At last, by one second road sealing 6 with on the ultraviolet photo-curing glue that is covered in this low-viscosity and cover another part and be exposed to circuit (S206) on this substrate 2.
Wherein, wherein this second road sealing 6 is silicones (silicone), silica gel (tuffy) or ultraviolet photo-curing glue (UV glue).If this second road sealing 6 is a ultraviolet photo-curing glue, then after the second road sealing step S206 finishes, further comprise step: by specific UV cured (UV-cured) manufacturing process, with ultraviolet light (UV) radiation modality harden this ultraviolet photo-curing glue and this second road sealing.
See also shown in Figure 5ly, it is the process flow diagram that the present invention is used to prevent the 3rd embodiment of the glue sealing method that aqueous vapor is infiltrated.By in the process flow diagram as can be known, the invention provides a kind of glue sealing method that is used to prevent that aqueous vapor from infiltrating, its step comprises: at first, to connect two plate bases 1,2, wherein 1,2 of this two plate bases produce micron-sized gap A (S300) by frame glue 3; Then, the ultraviolet photo-curing glue (UV glue) by one first road low-viscosity also covers a part of circuit (S302) that is exposed on this substrate 2 with the gap A that fills 1,2 of this two plate bases; Then, be exposed to circuit (S304) on this substrate 2 by one second road ultraviolet photo-curing glue to be covered on this first road ultraviolet photo-curing glue and to cover another part; At last, by specific UV cured (UV-cured) manufacturing process, with ultraviolet light (UV) radiation modality harden simultaneously ultraviolet photo-curing glue and this second road ultraviolet photo-curing glue (S306) of this first road low-viscosity.
In sum, but the micron order gap A of 1,2 of the present invention's complete filling two substrates, and more can guarantee the reliability of products test by this double-deck sealing mode, even use under hot and humid environment, the quality of product can not be affected yet.
The above only is the detailed description and the accompanying drawing of the specific embodiment of one of the best of the present invention, but feature of the present invention is not limited thereto, and is not that protection scope of the present invention should be as the criterion with the claim scope of enclosing in order to restriction the present invention.All closing in the embodiment of the spirit variation similar with it of claim scope of the present invention all should be contained in the category of the present invention; Those skilled in the art in the field of the invention, can think easily and variation or modify all can be encompassed in the claim scope of the present invention.
Claims (32)
1, a kind of glue sealing method that is used to prevent the aqueous vapor infiltration, its step comprises:
To connect two plate bases, wherein produce micron-sized gap by frame glue between this two plate base;
Be exposed to circuit on the substrate wherein by the first road sealing of a low-viscosity to fill the gap between this two plate base and to cover a part; And
Be exposed to circuit on the substrate wherein by one second road sealing to be covered in this first road sealing and to cover another part.
2, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 1, wherein this substrate is face glass or colored filter.
3, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 1, wherein this micron-sized gap is about 5～7 microns in STN Super TN type, thin film transistor (TFT) or low tempterature poly silicon manufacturing process.
4, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 1, wherein this micron-sized gap is about 10～20 microns in Organic Light Emitting Diode manufacturing process.
5, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 1, wherein the viscosity of this first road sealing and this second road sealing is all the 100-300 centipoise.
6, the glue sealing method that is used to prevent that aqueous vapor from infiltrating as claimed in claim 1, this first road sealing ultraviolet photo-curing glue that is low-viscosity wherein, this ultraviolet photo-curing glue is the UV glue that the urethane acrylate oligomer mixes series.
7, the glue sealing method that is used to prevent that aqueous vapor from infiltrating as claimed in claim 6 after wherein this first road sealing is finished, further comprises step: by specific UV cured manufacturing process, with this first road sealing of hardening of UV-irradiation mode.
8, the glue sealing method that is used to prevent that aqueous vapor from infiltrating as claimed in claim 1, wherein this first road sealing be low-viscosity silicones or silica gel.
9, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 1, wherein this second road sealing is silicones, silica gel or ultraviolet photo-curing glue.
10, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 1, wherein this first road sealing and the second road sealing are all the ultraviolet photo-curing glue of low-viscosity.
11, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 10, after wherein this second road sealing is finished, further comprise step: by specific UV cured manufacturing process, with UV-irradiation mode harden this first road sealing and this second road sealing.
12, the glue sealing method that is used to prevent that aqueous vapor from infiltrating as claimed in claim 1 before wherein this first road sealing is filled, further comprises step: with a chip join therein on the substrate.
13, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 1, wherein this frame glue is to be arranged between this two plate base in the mode around sealing.
14, a kind of glue sealing method that is used to prevent the aqueous vapor infiltration, its step comprises:
To connect two plate bases, wherein produce micron-sized gap by frame glue between this two plate base;
Be exposed to circuit on the substrate wherein by the ultraviolet photo-curing glue of a low-viscosity to fill the gap between this two plate base and to cover a part;
By specific UV cured manufacturing process, with UV-irradiation mode this ultraviolet photo-curing glue that hardens; And
Be exposed to circuit on the substrate wherein by one second road sealing to be covered on this ultraviolet photo-curing glue and to cover another part.
15, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 14, wherein this substrate is face glass or colored filter.
16, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 14, wherein this micron-sized gap is about 5～7 microns in STN Super TN type, thin film transistor (TFT) or low tempterature poly silicon manufacturing process.
17, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 14, wherein this micron-sized gap is about 10～20 microns in Organic Light Emitting Diode manufacturing process.
18, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 14, wherein the viscosity of this first road sealing and this second road sealing is all the 100-300 centipoise.
19, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 14, wherein this second road sealing is silicones, silica gel or ultraviolet photo-curing glue.
20, the glue sealing method that is used to prevent that aqueous vapor from infiltrating as claimed in claim 19 after wherein this second road sealing is finished, further comprises step: by specific UV cured manufacturing process, with this second road sealing of hardening of UV-irradiation mode.
21, the glue sealing method that is used to prevent that aqueous vapor from infiltrating as claimed in claim 14 before wherein this first road sealing is filled, further comprises step: with a chip join therein on the substrate.
22, the glue sealing method that is used to prevent the aqueous vapor infiltration as claimed in claim 14, wherein this frame glue is to be arranged between this two plate base in the mode around sealing.
23, a kind of glue sealing structure that is used to prevent the aqueous vapor infiltration, it comprises:
At least two plate bases;
Frame glue, it wherein produces micron-sized gap around being arranged between this two plate base between this two plate base;
The first road sealing of one low-viscosity, it is filled in the gap between this two plate base and covers a part and is exposed to circuit on the substrate wherein; And
One second road sealing, it is covered in this first road sealing and covers another part and is exposed to the wherein circuit of a substrate.
24, the glue sealing structure that is used to prevent the aqueous vapor infiltration as claimed in claim 23, wherein this substrate is face glass or colored filter.
25, the glue sealing structure that is used to prevent the aqueous vapor infiltration as claimed in claim 23, wherein this micron-sized gap is about 5～7 microns in STN Super TN type, thin film transistor (TFT) or low tempterature poly silicon manufacturing process.
26, the glue sealing structure that is used to prevent the aqueous vapor infiltration as claimed in claim 23, wherein this micron-sized gap is about 10～20 microns in Organic Light Emitting Diode manufacturing process.
27, the glue sealing structure that is used to prevent the aqueous vapor infiltration as claimed in claim 23, wherein the viscosity of this first road sealing and this second road sealing is all the 100-300 centipoise.
28, the glue sealing structure that is used to prevent that aqueous vapor from infiltrating as claimed in claim 23, this first road sealing ultraviolet photo-curing glue that is low-viscosity wherein, this second road sealing is silicones or silica gel.
29, the glue sealing structure that is used to prevent the aqueous vapor infiltration as claimed in claim 23, wherein this first road sealing and the second road sealing are all the silicones or the silica gel of low-viscosity.
30, the glue sealing structure that is used to prevent the aqueous vapor infiltration as claimed in claim 23, wherein this first road sealing and the second road sealing are all the ultraviolet photo-curing glue of low-viscosity.
31, the glue sealing structure that is used to prevent that aqueous vapor from infiltrating as claimed in claim 23 comprises that further one is bonded on the chip on the substrate wherein.
32, the glue sealing structure that is used to prevent the aqueous vapor infiltration as claimed in claim 23, wherein this frame glue is to be arranged between this two plate base in the mode around sealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510079098 CN1885369A (en) | 2005-06-24 | 2005-06-24 | Glue sealing method and glue sealing structure for preventing moisture infiltration |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510079098 CN1885369A (en) | 2005-06-24 | 2005-06-24 | Glue sealing method and glue sealing structure for preventing moisture infiltration |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1885369A true CN1885369A (en) | 2006-12-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510079098 Pending CN1885369A (en) | 2005-06-24 | 2005-06-24 | Glue sealing method and glue sealing structure for preventing moisture infiltration |
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| CN (1) | CN1885369A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124268A (en) * | 2014-07-21 | 2014-10-29 | 京东方科技集团股份有限公司 | Organic light emitting diode (OLED) display panel and manufacture method thereof |
| CN105328969A (en) * | 2014-08-11 | 2016-02-17 | 上海和辉光电有限公司 | Package substrate manufacturing method and package substrate |
| CN108153064A (en) * | 2018-01-15 | 2018-06-12 | 张家港康得新光电材料有限公司 | The glue sealing method of display screen frame |
| CN108336245A (en) * | 2018-01-09 | 2018-07-27 | 友达光电股份有限公司 | Flexible electronic device and manufacturing method thereof |
-
2005
- 2005-06-24 CN CN 200510079098 patent/CN1885369A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124268A (en) * | 2014-07-21 | 2014-10-29 | 京东方科技集团股份有限公司 | Organic light emitting diode (OLED) display panel and manufacture method thereof |
| WO2016011709A1 (en) * | 2014-07-21 | 2016-01-28 | 京东方科技集团股份有限公司 | Organic light emitting diode display panel and manufacturing method therefor |
| CN105328969A (en) * | 2014-08-11 | 2016-02-17 | 上海和辉光电有限公司 | Package substrate manufacturing method and package substrate |
| CN108336245A (en) * | 2018-01-09 | 2018-07-27 | 友达光电股份有限公司 | Flexible electronic device and manufacturing method thereof |
| CN108153064A (en) * | 2018-01-15 | 2018-06-12 | 张家港康得新光电材料有限公司 | The glue sealing method of display screen frame |
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