CN1871683A

CN1871683A - Electron emitting element, electron emitting device, display and light source

Info

Publication number: CN1871683A
Application number: CNA2004800234691A
Authority: CN
Inventors: 武内幸久; 七泷努; 大和田岩
Original assignee: NGK Insulators Ltd
Current assignee: NGK Insulators Ltd
Priority date: 2004-12-28
Filing date: 2004-12-28
Publication date: 2006-11-29
Also published as: WO2006070446A1

Abstract

Electron emitting element with electrode on the glass substrate, the emitting electrode which composed by dielectric film formed on the low electrode and up electrode formed on the emitting electrode. Applying driven voltage for emitting electronic between up-lower electrode. At least the up electrode with multiple through are on the emitting electrode, the edge of the through and surface of the emitting electrode leaved from the emitting electrode.

Description

Electron emitting element, electron emitting device, display and light source

Technical field

The electron emitting element that the present invention relates on glass substrate, form, have a plurality of these electron emitting elements electron emitting device, use the display of this electron emitting device and use the light source of described electron emitting device.

Background technology

Recently, electron emitting device has cathode electrode and anode electrode, is applied in the such various application of field-emitter display (FED) or back light.In the occasion that is suitable for FED, arrange a plurality of electron emitting elements with two-dimensional approach, with a plurality of fluorophor of predetermined distance difference configuration plane to these electron emitting elements.

Existing example as this electron emitting element, patent documentation 1～5 is for example arranged, but because they do not use dielectric in emitter portion, so exist in and need processing and forming or microfabrication between the electrode of opposite, must apply high voltage for penetrating electronics, in addition, there is such problem: panel production process complexity, manufacturing cost height.

Therefore, consider to constitute emitter, penetrate, narrated various arguments in the non-patent literature 1～3 below about the electronics that carries out from dielectric with dielectric.

Patent documentation 1: the spy opens flat 1-311533 communique

Patent documentation 2: the spy opens flat 7-147131 communique

Patent documentation 3: the spy opens the 2000-285801 communique

Patent documentation 4: special public clear 46-20944 communique

Patent documentation 5: special public clear 44-26125 communique

Non-patent literature 1: An Gang, Shi Jingzhu " use the Pulse Electric component of strong dielectric negative electrode ", and Applied Physics the 68th is rolled up p546～550 (1999) No. 5

Non-patent literature 2:V.F.Puchkarev, G.A.Mesyats, On the mechanism ofemission from the ferroelectric ceramic cathode, J.Appl.Phys., vol.78, No.9,1November, 1995, p.5633-5637

Non-patent literature 3:H.Riege, Electron emission ferroelectrics-a view, Nucl.Instr.and Meth.A340, p.80-89 (1994)

Summary of the invention

But in existing electron emitting element 200, as shown in figure 40, form the occasion of upper electrode 204 and lower electrode 206 in emitter portion 202, particularly, upper electrode 204 is adjacent to be formed in the emitter portion 202.The electric field centrostigma is the triple point of upper electrode 204/ emitter portion 202/ vacuum, but in this occasion, corresponding to the marginal portion of upper electrode 204.

But,,, penetrate the little such problem of electronics energy needed so the degree that exists electric field to concentrate is little because the marginal portion of upper electrode 204 is adjacent in emitter portion 202.In addition, also only limit to the marginal portion of upper electrode 204,, promptly all producing scattered error in the electronics ejaculation characteristic so there is such problem because penetrate electronic section, the control difficulty that electronics penetrates, simultaneously, it is low that electronics penetrates efficient.

The present invention considers to propose after such problem, its objective is, a kind of electron emitting element and electron emitting device are provided, high electric field can easily take place and concentrate in them, and can make a plurality of electronics and penetrate the position, can realize big output, high efficiency that electronics penetrates, also can use low voltage drive, and help realizing large-area sheet, reduction product cost.

Another object of the present invention is, a kind of high brightness and display and light source cheaply are provided, they used the big output that can realize electronics and penetrate, high efficiency, also can be with low voltage drive and the electronics that help realizing large-area sheet, reducing product cost penetrate the position.

Electron emitting element of the present invention is characterized in that, has: first electrode that forms on glass substrate; The emitter portion that forms by dielectric film that on described first electrode, forms; With second electrode that in described emitter portion, forms; Between described first electrode and described second electrode, be applied for the driving voltage that penetrates electronics, at least described second electrode, have a plurality of breakthrough parts that expose described emitter portion, in described second electrode, with the relative face of described emitter portion, leave in the edge part of described breakthrough part from described emitter portion.

In addition, electron emitting device of the present invention, have a plurality of electron emitting elements that on glass substrate, form, it is characterized in that, described electron emitting element, have: first electrode that on described glass substrate, forms, the emitter portion that forms by dielectric film that on described first electrode, forms, with second electrode that in described emitter portion, forms, between described first electrode and described second electrode, be applied for the driving voltage that penetrates electronics, at least described second electrode has a plurality of breakthrough parts that expose described emitter portion, in described second electrode, with the relative face of described emitter portion, leave in the edge part of described breakthrough part from described emitter portion.

In addition, display of the present invention has: above-mentioned electron emitting device; In glass substrate be formed on described electron emitting device in the transparent panel of the relative configuration of face of emitter portion; In described transparent panel on the face relative with described emitter portion, have be used for and the electron emitting element of described electron emitting device between form the electrode of electric field and the fluorophor that on described electrode, forms, make the described fluorophor of electron bombardment that penetrates from described electron emitting element encourage described fluorophor, make it luminous.

In addition, light source of the present invention has: above-mentioned electron emitting device; In glass substrate with the transparent panel of the relative configuration of face of formation emitter portion in described electron emitting device; In described transparent panel, on the face relative with described emitter portion, have be used for described electron emitting device and electron emitting element between form the electrode of electric field and the fluorophor that on described electrode, forms, make the described fluorophor of electron bombardment that penetrates from described electron emitting element encourage described fluorophor, make the light of sending out.

At first, between first electrode and second electrode, apply driving voltage.This driving voltage for example as pulse voltage or alternating voltage, is defined as the process of following the time, from be changed to the voltage of the voltage level low or higher than reference voltage sharp than the high or low voltage level of reference voltage (for example 0V).

In addition, the contact position of the medium (for example vacuum) on every side of the face of second electrode of formation emitter portion and second electrode and this electron emitting element forms triple junction.Here, so-called triple junction is defined as the electric field that forms by contacting of second electrode and emitter portion and vacuum and concentrates portion.In addition, in described triple junction, also comprise the triple point that second electrode and emitter portion and vacuum exist as a point.In the present invention, triple junction is formed on the edge part of a plurality of breakthrough parts or the edge part of second electrode.Therefore, between first electrode and second electrode, apply driving voltage as described above, electric field just takes place in above-mentioned triple junction concentrate.

Then, in the phase I, between first electrode and second electrode, apply the voltage more high or low than reference voltage, for example take place to concentrate in above-mentioned triple junction to the electric field of a direction, carry out electronics from second electrode to emitter portion and penetrate, for example in emitter portion, at part corresponding or near partial product electric power storage the edge part of second electrode with the breakthrough part of second electrode.That is emitter portion becomes charged.At this moment, second electrode is worked as the electronics supply source.

Second stage below, level as driving voltage sharply changes, and between first electrode and second electrode, apply the words of the voltage low or higher than reference voltage, then this time at part corresponding or near the charged electronics the edge part of second electrode with the breakthrough part of second electrode, by dipole (on the surface of emitter portion, manifesting negative polarity) to the emitter portion of opposite direction reverse-poled, displaced from emitter portion, in emitter portion, from the part of described electronics savings, penetrate electronics by breakthrough part.Certainly, also penetrate electronics near the edge part of second electrode.At this moment, the electronics of the carried charge of the described emitter portion in the corresponding described phase I is penetrated from described emitter portion in second stage.In addition, the carried charge of the described emitter portion in the described phase I is maintained to the electronics that carries out in described second stage and penetrates.

In addition, in other electronics shoot mode, at first, between first period of output, carry out being preparation that electronics penetrates (for example as the material of emitter to the polarization of a direction etc.).Between second period of output below, if the level of driving voltage sharply reduces, electric field then this time takes place in above-mentioned triple junction to be concentrated, concentrate from second electrode by this electric field and to penetrate primary electron, near the part of impacting in the material as emitter, exposing from breakthrough part and the edge part of second electrode.Thus, the part of impacting from primary electron penetrates secondary electron (reflection electronic that contains primary electron).That is, the starting stage between second period of output, near the edge part of the described breakthrough part and second electrode, penetrate secondary electron.

Then, in this electron emitting element, at first, a plurality of breakthrough parts on second electrode, have been formed, so, near the edge part of each breakthrough part and second electrode, penetrate electronics equably, lower dispersiveness that whole electronics penetrates characteristic, become easily carry out control that electronics penetrates in, improve electronics and penetrate efficient.

In addition, the present invention, and described second electrode in, form the shape in gap between the face of the described emitter portion subtend of the edge part of described breakthrough part and the described emitter portion, so when having applied driving voltage, electric field takes place easily concentrate in the part in this gap.The high efficiency that this and electronics penetrate has relation, can realize the lower voltage (electronics under low voltage level penetrates) of driving voltage.

As mentioned above, the present invention, and described second electrode in, between the face of the described emitter portion subtend of the edge part of described breakthrough part and described emitter portion, form the gap, the edge part of the breakthrough part in second electrode forms eaves shape (bead shape), become big so be aided with to concentrate, become from the part (edge part of breakthrough part) of described eaves shape and penetrate electronics easily at the electric field of the part in gap.Big output, high efficiency that this and electronics penetrate are relevant, can realize the lower voltage of driving voltage.Thus, for example can realize arranging the high brightnessization of that a plurality of electron emitting elements constitute, for example display or light source.In addition, no matter be that the material of making the mode of the electronics of putting aside in the material of ejaculation as emitter or the primary electron from second electrode being impacted as emitter makes any of its mode that penetrates secondary electron, the edge part of the breakthrough part in second electrode is all as gate electrode (control electrode, focused electron lens etc.) work, so can improve the rectilinear propagation that penetrates electronics.This point in the occasion that constitutes as the electron source of display, is favourable in attenuating aspect crosstalking.

Like this, in the present invention, high electric field can easily take place concentrate, and, can make a plurality of electronics and penetrate the position, can realize height output, high efficiency that electronics penetrates, also can low voltage drive (low consumption electric power).Especially, because use glass substrate, so can reduce product cost.In addition, the low temperatureization of treatment temperature of the manufacturing of electron emitting element can be promoted, the cost degradation of equipment can be realized.Also can use sintered glass ceramics as glass substrate.In this occasion, different as treatment temperature with general glass, can use 600～800 ℃ scope, can widen the degree of freedom that material is selected.By using glass substrate, can obtain at an easy rate corresponding big view display or with the big plate of the back light of the LCD of big picture.In addition, in the occasion of the pipe of making vacuum seal electronics ejaculation element, the transparent panel with glass tubing wall and pedestal or formation fluorophor can carry out frit to them and the glass substrate that forms electron emitting element and bond.If carry out the formation of electron emitting element conversely speaking, on the substrate beyond the glass, then because do not match with other the glass parts and the thermal coefficient of expansion of frit, pipe is made and is become difficult.

In addition, in the present invention, in described emitter portion, at least on the face that forms described second electrode, formation by dielectric particle edges cause concavo-convex, described first electrode also can form described breakthrough part on the part corresponding with the recess that is caused by described dielectric particle edges.In addition, described first electrode also can be the conductive material that comprises the material with lepidiod shape, perhaps, has the aggregate of the material of a plurality of flakey shapes.

Thus, in described first electrode, in the edge part of described breakthrough part with the relative face of described emitter portion, can realize the structure left from described emitter portion simply, that is between the face relative of the edge part of described breakthrough part and described emitter portion, form the structure in gap with described emitter portion.

As mentioned above, according to electron emitting element of the present invention and electron emitting device, high electric field can easily take place to be concentrated, and can make a plurality of electronics and penetrate the position, can realize height output, high efficiency that electronics penetrates, also can low voltage drive (low consumption electric power), and make large-area sheet, reduce aspect the product cost favourable.

In addition, according to display of the present invention and light source, can realize high brightness and low cost with big picture or large tracts of land.

Description of drawings

Fig. 1 is the sectional view that part is elliptically represented the electron emitting element of first example;

Fig. 2 is the amplification sectional view that part is elliptically represented the electron emitting element of first example;

Fig. 3 is the sectional view that amplifies the pith of the electron emitting element of representing first example;

Fig. 4 is the plane graph of an example that is illustrated in the shape of the breakthrough part that forms on the upper electrode;

Fig. 5 A is the sectional view of other examples of expression upper electrode, and Fig. 5 B is the sectional view that amplifies the expression pith;

Fig. 6 A is the sectional view of another other examples of expression upper electrode, and Fig. 6 B is the sectional view that amplifies the expression pith;

Fig. 7 is the figure of the voltage waveform of the driving voltage in the expression first electronics shoot mode;

Fig. 8 is the key diagram of the electronics of (second stage) between second period of output of expression first electronics shoot mode situation about penetrating;

Fig. 9 is the figure of the voltage waveform of the driving voltage in the expression second electronics shoot mode;

Figure 10 is the key diagram of the electronics of (second stage) between second period of output of expression second electronics shoot mode situation about penetrating;

Figure 11 is the figure of an example of cross sectional shape of the eaves portion of expression upper electrode;

Figure 12 is the figure of other examples of cross sectional shape of the eaves portion of expression upper electrode;

Figure 13 is the figure of another other examples of cross sectional shape of the eaves portion of expression upper electrode;

Figure 14 is the equivalent circuit figure that is illustrated in the connection status of the various capacitors that are connected between upper electrode and lower electrode;

Figure 15 is the figure that is used to illustrate that the capacitance of the various capacitors that are connected is calculated between upper electrode and lower electrode;

Figure 16 is the plane graph of first variation that part is elliptically represented the electron emitting element of first example;

Figure 17 is the plane graph of second variation that part is elliptically represented the electron emitting element of first example;

Figure 18 is the plane graph of the 3rd variation that part is elliptically represented the electron emitting element of first example;

Figure 19 is the figure of voltage-quantity of electric charge characteristic (voltage-amount of polarization characteristic) of the electron emitting element of expression first example;

Figure 20 A is the key diagram of state that is illustrated in the some p1 of Figure 19, and Figure 20 B is the key diagram of state that is illustrated in the some p2 of Figure 19, and Figure 20 C is the key diagram that is illustrated in from the some p2 of Figure 19 to the state of a p3;

Figure 21 A is the key diagram that is illustrated in from the some p3 of Figure 19 to the state of a p4, and Figure 21 B is the key diagram that is illustrated in the state before the some p4 that will arrive Figure 19, and Figure 21 C is the key diagram that is illustrated in from the some p4 of Figure 19 to the state of a p6;

Figure 22 is the block diagram that luminous displaing part such as the display that the electron emitting element of first example constitutes and drive circuit are used in expression;

Figure 23 A～23C is the amplitude-modulated figure that the pulse signal that the Modulation and Amplitude Modulation circuit carries out is used in expression;

Figure 24 is the figure that expression relates to the signal supply circuit of variation;

Figure 25 A～25C is the figure that the pulse width modulation of the pulse signal that pulse width modulation circuit carries out is used in expression;

Figure 26 A be among presentation graphs 23A or Figure 25 A applied voltage Vsl the time the figure of B-H loop, Figure 26 B be among presentation graphs 23B or Figure 25 B applied voltage Vsm the time the figure of B-H loop, Figure 26 C be among presentation graphs 23C or Figure 25 C applied voltage Vsh the time the figure of B-H loop;

Figure 27 is the pie graph that is illustrated in an example that disposes collector electrode, fluorophor and transparent panel on the upper electrode;

Figure 28 is illustrated in another the routine pie graph that disposes collector electrode, fluorophor and transparent panel on the upper electrode;

Figure 29 A is illustrated in writing pulse and lighting the figure of the waveform of pulse of using in first experimental example (observing the experiment of ejaculation state of the electronics of electron emitting element), and Figure 29 B represents from the figure of the state of electron emitting element ejaculation electronics with the detection voltage waveform of light receiving element in first experimental example;

Figure 30 is illustrated in writing pulse and lighting the figure of the waveform of pulse of using in second to the 4th experimental example;

Figure 31 is the result's of expression second experimental example (experiment how the ejaculation amount of the electronics of observation electron emitting element changes with the amplitude that writes pulse) a performance plot;

Figure 32 is the result's of expression the 3rd experimental example (experiment how the ejaculation amount of the electronics of observation electron emitting element changes with the amplitude of lighting pulse) a performance plot;

Figure 33 is the result's of expression the 4th experimental example (observing the experiment how the ejaculation amount of the electronics of electron emitting element changes with the level of collector voltage) a performance plot;

Figure 34 is a timing diagram of representing an example of driving methods such as display;

Figure 35 is the chart that is illustrated in the applied voltage relation in the driving method shown in Figure 34;

Figure 36 is the sectional view that part is omitted the electron emitting element of expression second example;

Figure 37 is the sectional view of first variation that part is elliptically represented the electron emitting element of second example;

Figure 38 is the sectional view of second variation that part is elliptically represented the electron emitting element of second example;

Figure 39 is the sectional view of the 3rd variation that part is elliptically represented the electron emitting element of second example;

Figure 40 is the part sectional view of the electron emitting element of the existing example of expression elliptically.

Symbol description

10A, 10Aa～10Ac, 10B, 10Ba～10Bc electron emitting element, 12 emitter portions, 14 upper electrodes, 16 lower electrodes, 20 breakthrough parts, 22 is concavo-convex, 24 recesses, 26 eaves portions, 28 gaps, 30 protuberances, 32 holes, 44,46 otch, 48 slits, 50 floating electrodes, 100 displays etc.

Embodiment

The example example of electron emitting element of the present invention is described below with reference to Fig. 1～Figure 40.

At first, the electron emitting device of this example is except that the purposes as display, applicable to electron beam irradiation device, light source, replacement LED use, electronic unit manufacturing installation, electronic circuit component.

Electron ray in the electron beam irradiation device, than the ultraviolet lamp of popularizing now in ultraviolet ray, absorbent properties are good under high-energy.As making use-case, in semiconductor device, the purposes of solidifying dielectric film when overlapping wafer is arranged, the purposes of even sclerosis printing ink is arranged in the printing drying, the handlebar medicine equipment is enclosed in the purposes of sterilization in the packing case etc.

As the purposes of light source, have LCD with the such planar light source of back light and as towards high brightness, high efficiency technical specification, for example use the light source purposes etc. of the projector of extra-high-pressure mercury vapour lamp etc.In the occasion that the electron emitting device of this example is used for light source, have such as miniaturization, long-life, light at a high speed, owing to no mercury reduces the such feature of carrying capacity of environment.

The purposes of LED instead has the back light etc. of the small-sized LCD of area source purposes such as illumination within doors, lamps for vehicle, semaphore or object chip light source, semaphore, portable phone.

As the purposes of electronic unit manufacturing installation, there is plasma in the CVD device of electron beam source, plasma of film formation device such as electron beam evaporation plating device to generate with the electron source of (gas isoreactivityization with) electron source, decomposing gas purposes etc.In addition, speed-sensitive switch element, the big such vacuum microdevice purposes of electric current output element that also has T (billion) Hz to drive.In addition, as the printer parts, that is make the luminescent device of photosensitive drums sensitization or be used to make the charged electron source of dielectric also very good by combination with fluorophor.

As electronic circuit component, because can realize big electric current output, high power, so the purposes for analog elements such as digital elements such as switch, relay, diode, operational amplifiers is arranged.

At first, the electron emitting element 10A of first example, as shown in Figure 1, be formed on the glass substrate 11, and, first electrode (for example lower electrode) 16 that has the tabular emitter portion 12 that constitutes with dielectric, forms first (for example below) of this emitter portion 12, at second electrode (for example upper electrode) 14 of second (for example) formation of emitter portion 12 with between upper electrode 14 and lower electrode 16, apply the pulse generation source 18 of driving voltage Va.

Upper electrode 14 as shown in Figure 2, has a plurality of breakthrough parts 20 that expose emitter portion 12.Especially, the surface of emitter portion 12, form by dielectric particle edges cause concavo-convex 22, the breakthrough part 20 of upper electrode 14 forms on the part of the recess 24 of correspondence in described dielectric particle edges.In the example of Fig. 2, express a corresponding recess 24 and form the situation of a breakthrough part 20, but also have corresponding a plurality of recess 24 to form the situation of a breakthrough part 20.Constitute dielectric particle diameter of emitter portion 12, hope is 0.1 μ m～10 μ m, preferably 2 μ m～7 μ m.In the example of Fig. 2, the particle diameter of power taking medium is 3 μ m.

Have, in this first example, as shown in Figure 3, in upper electrode 14, the face 26a in the face of emitter portion 12 in the edge part 26 of breakthrough part 20 leaves from emitter portion 12 again.That is in upper electrode 14, forming gap 28 between face 26a that faces emitter portion 12 in the edge part 26 of breakthrough part 20 and the emitter portion 12, the edge part 26 of the breakthrough part 20 in the upper electrode 14 is formed the shape of eaves shape (bead shape).Therefore, in the following description, " edge part 26 of the breakthrough part 20 of upper electrode 14 " recorded and narrated is " the eaves portion 26 of upper electrode 14 ".In addition, in the example of Fig. 1, Fig. 2, Fig. 3, Fig. 5 A, Fig. 5 B, Fig. 6 A, Fig. 6 B, Fig. 8, Figure 10, Figure 11～Figure 13, Figure 18, the cross section of concavo-convex 22 protuberance 30 of dielectric particle edges is represented with semicircle shape typically, but be not limited to this shape.

In addition, in this first example, the thickness t of upper electrode 14 is got 0.01 μ m≤t≤10 μ m, above the emitter portion 12, that is the surface of the protuberance on dielectric particle edges 30 (also being the internal face of recess 24), the maximum angle θ at the angle that becomes with the lower surface 26a of the eaves portion 26 of upper electrode 14 gets 1 °≤θ≤60 °.In addition, the largest interval d along the vertical direction between the lower surface 26a of the eaves portion 26 of the surface (internal face of recess 24) of the protuberance 30 on dielectric particle edges of emitter portion 12 and upper electrode 14 gets 0 μ m＜t≤10 μ m.

Have again, in this first example, the shape of breakthrough part 20, especially as shown in Figure 4, the shape of seeing from above is the shape in hole 32, and is for example circular, oval, endless belt is such, comprises the shape of curved portion or the polygonal shape as quadrangle or triangle.In the example of Fig. 4, express circular occasion as the shape in hole 32.

In this occasion, the average diameter in hole 32 is more than or equal to 0.1 μ m, smaller or equal to 10 μ m.This average diameter, the length of the many lines that the difference at the center of expression by hole 32 is different average.

The material of each component parts is described here.Constitute the dielectric of emitter portion 12, suitable can adopt permittivity than higher, for example more than or equal to 1000 dielectric.As such dielectric, except that barium titanate, can enumerate the zircon lead plumbate, the magnesium lead niobate, the nickel lead niobate, zinc niobate lead, the manganese lead niobate, the magnesium lead tantanate, the nickel lead tantanate, the antimony lead stannate, lead titanates, the magnesium lead tungstate, cobalt lead niobate etc., the pottery that perhaps comprises their combination in any, principal component contains the material of these compounds more than or equal to 50% weight, perhaps for described pottery, further suitably add lanthanum, calcium, strontium, molybdenum, tungsten, barium, niobium, zinc, nickel, the material of other compound has perhaps suitably been added in the oxide of manganese etc. or their combination arbitrarily.

For example, in magnesium lead niobate (PMN) and lead titanates (PT) 2 compositions series nPMN-mPT (getting n, m is the mole number ratio), if the mole number that makes PMN is than becoming big, then Curie point descends, and the permittivity under the room temperature is become greatly.

Especially, wish that when n=0.85～1.0, m=1.0-n permittivity is more than 3000.For example, the permittivity 15000 under the room temperature can be obtained when n=0.91, m=0.09, the permittivity 20000 under the room temperature can be obtained when n=0.95, m=0.05.

Then, in magnesium lead niobate (PMN), lead titanates (PT), zircon lead plumbate (PZ) 3 composition series, except that the mole number that increases PMN than, preferably by near the morphotropism making quadratic crystal and intend cubic crystal or quadratic crystal and water chestnut faceted crystal composition increase permittivity border (MPB:Morphotropic Phase Boundary) mutually.PMN: PT: PZ=0.37 for example: permittivity was 5500 in 0.375: 0.25, PMN: PT: PZ=0.5: permittivity was 4500 in 0.375: 0.125, and is desirable especially.And then, wish in the scope that can guarantee insulating properties, in these dielectrics, to sneak into the such metal of platinum, improve permittivity.In this occasion, for example, can in dielectric, sneak into platinum with weight ratio 20%.

In addition, emitter portion 12, as mentioned above, can use piezoelectric layer or anti-strong dielectric layer, but in the occasion of using the piezoelectric layer as emitter portion 12, as this piezoelectric layer, for example can enumerate zircon lead plumbate, magnesium lead niobate, nickel lead niobate, zinc niobate lead, manganese lead niobate, magnesium lead tantanate, nickel lead tantanate, antimony lead stannate, lead titanates, barium titanate, magnesium lead tungstate, cobalt lead niobate etc., perhaps comprise their pottery of combination arbitrarily.

Much less, principal component also can be the material that contains more than or equal to these compounds of 50% weight.In addition, in described pottery, contain the pottery of zircon lead plumbate, the highest as the constituent material usage frequency of the piezoelectric layer that constitutes emitter portion 12.

In addition, in the occasion that constitutes the piezoelectric layer with pottery, in described pottery, and then also can use the suitable oxide that adds lanthanum, calcium, strontium, molybdenum, tungsten, barium, niobium, zinc, nickel, manganese etc., perhaps their combination in any, or the pottery of other compound.In addition, also can use in described pottery and add SiO ₂, CeO ₂, Pb ₅Ce ₃O ₁₁The perhaps pottery of their any combination.Specifically, wish in PT-PZ-PMN series piezoelectric, to add the SiO of 0.2wt% ₂, or the CeO of 0.1wt% ₂, or the Pb of 1～2wt% ₅Ce ₃O ₁₁Material.

For example, be principal component and then to use the pottery that contains lanthanum or strontium be very good with the composition of forming by magnesium lead niobate and zircon lead plumbate and lead titanates.

The piezoelectric layer can be fine and close, also can be porous matter, in the occasion of porous matter, wishes that its porosity is smaller or equal to 40%.

As the occasion of emitter portion 12 at the anti-strong dielectric layer of use, as this anti-strong dielectric layer, hope be with the zircon lead plumbate be principal component material, with the composition of forming by zircon lead plumbate and lead stannate be the material of principal component, again by the material that in the zircon lead plumbate, adds lanthana or for the composition interpolation zircon lead plumbate of forming by zircon lead plumbate and lead stannate or the material of lead niobate.

In addition, this anti-strong dielectric layer also can be a porous matter, in the occasion of porous matter, wishes that its porosity is smaller or equal to 30%.

Have again, in emitter portion 12, use tantalic acid bismuthic acid strontium (SrBi ₂Ta ₂O ₉) occasion, wish that polarization reversal fatigue is little.The tired little material of such polarization reversal is in stratiform strong dielectric compound, with (BiO ₂) ²⁺(A _M-1B _mO _3m+1) ²¹Such general expression is represented.Here, the ion of metal A is Ca ²⁺, Sr ²⁺, Ba ²⁺, Pb ²⁺, Bi ³⁺, La ³⁺Deng, the ion of metal B is Ti ⁴⁺, Ta ⁵⁺, Nb ⁵⁺Deng.Have again, also can in the piezoelectric ceramic of barium titanate series, zircon lead plumbate, PTZ series, add that additive makes it semiconductor transformation.In this occasion, make to have uneven Electric Field Distribution in the emitter portion 12, the near interface with upper electrode 14 that can help electronics to penetrate carries out electric field and concentrates.

In addition, in piezoelectric/anti-strong dielectric pottery, for example, can reduce sintering temperature by sneaking into ceramic components such as the sour glass of plumbous boron Gui (ホウケイ) or other low-melting compounds (for example bismuth oxide etc.).

In addition, in the occasion that constitutes with piezoelectric/anti-strong dielectric pottery, its shape also can be tabular formed body, tabular laminated body or other support with the substrate superimposed layer or bonding they.

Exception by using the material of non-plumbous series in emitter portion 12, by emitter portion 12 being made fusing point or the high material of evaporating temperature, is difficult to impaired for the impact of electronics or ion.

Then, as the method that on glass substrate 11, forms emitter portion 12, can use various thick film forming methods such as screen printing method, infusion process, rubbing method, electrophoresis, the spraying precipitation method, perhaps various film forming methods such as ion beam method, sputtering method, vacuum vapour deposition, ion plating method, chemical vapor deposition method (CVD), plating.

Wherein, use the thick film forming method of screen printing method or infusion process, rubbing method, electrophoresis etc., can use mean particle diameter to be 0.01～5 μ m, preferably can to use with the particle of the piezoelectric ceramic of 0.05～3 μ m and form, can access good piezoelectricity operating characteristics like this as the paste of principal component or glaze slip or suspension, emulsion, dissolving glue.

Electrophoresis particularly, mainly be to form film with high density and high form accuracy, has such feature of in " electrochemistry and industrial physicochemistry Vol.53; No.1 (1985); p63～68 An Zhai and husband work " or technical literatures such as " based on the high order forming process research discussion exposure draft collection (1998) of the pottery of the 1st electrophoresis; p5～6, p23～24 ", putting down in writing.Like this, consider precision prescribed or reliability etc., system of selection is used aptly.

In addition, adopt, form as emitter portion 12, and the method for low-melting glass of impregnation within it or dissolving micelle is very good the material of piezoelectric/electrostrictive material powdered.By such method, because can under low temperature, form film, so as this first example, the occasion that forms emitter portion 12 on glass substrate 11 is very suitable smaller or equal to 700 ℃ or 600 ℃.In addition, the described spraying precipitation method also are the methods that can form film at low temperatures.

Upper electrode 14 uses the organic metal paste that can obtain film behind sintering.For example, materials such as platinum resin paste are used in hope.In addition, suppress the oxide electrode of polarization reversal fatigue, for example ruthenium-oxide (RuO ₂), yttrium oxide (IrO ₂), ruthenic acid strontium (SrRuO ₃), La _1-xSr _xCoO ₃(for example x=0.3 or 0.5), La _1-xCa _xMnO ₃(for example x=0.2), La _1-xCa _xMn _1-yCo _yO ₃(for example x=0.2, y=0.05) or the material that they are for example sneaked in the platinum resin paste are also very good.

In addition, as upper electrode 14, shown in Fig. 5 A and 5B, also wish to use the aggregate 17 of material 15 (for example graphite) with a plurality of flakey shapes, perhaps shown in Fig. 6 A and Fig. 6 B, comprise the aggregate 21 of material 19 of the conductivity of material 15 with flakey shape.In this occasion, not to cover the surface of emitter portion 12 fully, but the breakthrough part 20 that a plurality of emitter portion 12 parts are exposed is set with described aggregate 17 or aggregate 21, in emitter portion 12, the part of the adjacent breakthrough part 20 of face is penetrated the zone as electronics.

Upper electrode 14, use above-mentioned material, can be according to based on various thick film forming methods such as screen printing, injection, coating, dipping, coating, electrophoresis, perhaps various film forming methods such as sputtering method, ion beam method, vacuum vapour deposition, ion plating method, chemical vapor deposition method (CVD), plating form, and suitable is to form by the former thick film forming method.

On the other hand, lower electrode 16 uses the material metal for example with conductivity, by formations such as platinum, molybdenum, tungsten.In addition, by have for high-temperature oxidation environment gas repellence conductor, the formations such as compound of compound, insulating ceramics and the alloy of metal monomer, alloy, insulating ceramics and metal monomer for example, suitable is by alloys such as high-melting-point noble metal such as platinum, iridium, palladium, rhodium or silver-palladium, silver-platinum, platinum-cakes is that the material of principal component or the cermet material of platinum and ceramic material constitute.What be more suitable for is, by being that the material of principal component constitutes with the alloy of platinum or platinum series only.

In addition, as lower electrode 16, also can use carbon, graphite series material.In addition, the ratio of the ceramic material that in electrode material, adds, the degree of 5～30 volume % is suitable.Certainly, also can use and above-mentioned upper electrode identical materials.

What lower electrode 16 was suitable is to generate by above-mentioned thick film forming method.The thickness of lower electrode 16 is less than and equals 20 μ m, more suitably is smaller or equal to 5 μ m.

Sintering processes as electron emitting element 10A, can be on glass substrate 11 in turn lamination as the material of lower electrode 16, as the material of emitter portion 12 and as the material of upper electrode 14, then construct sintering as a whole, also can heat-treat (sintering processes) back and glass substrate 11 and be made of one structure when forming lower electrode 16, emitter portion 12, upper electrode 14 respectively.In addition, by the formation method of upper electrode 14 and lower electrode 16, the integrated heat treated situation that do not need is arranged also.

As about for making the temperature of the emitter portion 12, upper electrode 14 and the lower electrode 16 incorporate sintering processes that on glass substrate, form, consider the glass softening point of glass substrate 11, get 500～1000 ℃ ℃, suitable is gets 600～800 ℃ scope.Have again, the occasion in the membranaceous emitter of heat treatment portion 12, for not making the composition instability of emitter portion 12 when the high temperature, Yi Bian preferably and the evaporation source of emitter portion 12 carry out environmental gas together and control, Yi Bian carry out sintering processes.

As film formation method to glass substrate 11, processing, the material of the temperature that the softening point of selected glass substrate 11 is following, order forms lower electrode 16, emitter portion 12 and upper electrode 14 on glass substrate 11.Specifically, it is following method, promptly, as lower electrode 16, form by screen printing and can carry out low sintering silver and stick with paste, behind the sintering, use the above-mentioned spraying precipitation method or be used in low-melting glass or dissolving micelle in the method etc. of powdery material of dipping piezoelectric/electrostrictive material form emitter portion 12,, on the low temperature sintering material, use formation upper electrodes 14 such as screen printing thereon, carry out sintering.

In addition, as method for distinguishing, also can be being bonded on the glass substrate 11 at the plate that forms emitter portion 12 under the temperature more than the softening point of glass substrate 11.In this method,, obtain the advantage that electronics penetrates needed characteristic easily so have because do not limit the sintering temperature of emitter portion 12.

By carrying out sintering processes, particularly, when the film that becomes upper electrode 14 is for example forming a plurality of holes etc. simultaneously when thickness 10 μ m are retracted to thickness 0.1 μ m, as shown in Figure 2, on upper electrode 14, form a plurality of breakthrough parts 20, become the structure that the edge part 26 of breakthrough part 20 is formed the eaves shape.Certainly, for the film that becomes upper electrode 14, also can after (before the sintering) passes through corrosion (wet corrosion, dry corrosion) or peel off pattern such as (リ Off トオ Off) formation in advance, carry out sintering.In this occasion, as described later,, can easily form kerf or slit-shaped as breakthrough part 20.

In addition, also can adopt by suitable member and cover emitter portion 12, and not make the surface of this emitter portion 12 directly expose the method for in the sintering environmental gas, carrying out sintering.

The electronics that the following describes electron emitting element 10A penetrates principle.At first, between upper electrode 14 and lower electrode 16, apply driving voltage Va.This driving voltage Va for example as pulse voltage or alternating voltage, is defined as the process of following the time, from be changed to the voltage of the voltage level low or higher than reference voltage sharp than the high or low voltage level of reference voltage (for example 0V).

In addition, the contact position of the medium (for example vacuum) around the upper surface of emitter portion 12 and upper electrode 14 and this electron emitting element 10A forms triple junction.Here, so-called triple junction is defined as by upper electrode 14 and contacts the concentrated portion of the electric field that forms with vacuum with emitter portion 12.In addition, also comprise the triple point that upper electrode 14 and emitter portion 12 and vacuum exist as a point at described triple junction place.Vacuum degree in the environmental gas it is desirable to 10 ²～10 ^-6Pa, better is 10 ^-3～10 ^-5Pa.

In first example, triple junction is formed on the eaves portion 26 of upper electrode 14 or the periphery of upper electrode 14.Therefore, between upper electrode 14 and lower electrode 16, apply driving voltage Va as described above, electric field takes place at above-mentioned triple junction place concentrate.

At first, with reference to Fig. 7 and Fig. 8 the first electronics shoot mode is described.T1 (phase I) between first period of output of Fig. 7 applies on upper electrode 14 than the low voltage V2 of reference voltage (is 0V in this occasion), applies the voltage V1 higher than reference voltage on lower electrode 16.T1 between this first period of output, at above-mentioned triple junction place electric field taking place concentrates, penetrate electronics from upper electrode 14 to emitter portion 12, for example in emitter portion 12, near partial product electric power storage the edge part of part that the breakthrough part 20 from upper electrode 14 exposes or upper electrode 14.That is emitter portion 12 becomes charged.At this moment, upper electrode 14 is worked as the electronics supply source.

Follow T2 (second stage) between second period of output, the voltage level of driving voltage Va changes with falling sharply, that is, as on upper electrode 14, applying the voltage V1 higher than reference voltage, on lower electrode 16, apply the words of the voltage V2 lower than reference voltage, this time, near the charged electronics edge part of the part of the breakthrough part 20 of corresponding upper electrode 14 or upper electrode 14 is displaced from emitter portion 12 by the dipole (manifesting negative polarity on the surface of emitter portion 12) to the emitter portion 12 of opposite direction reverse-poled.As shown in Figure 8, in emitter portion 12,, penetrate electronics by breakthrough part 20 from the part of above-mentioned savings electronics.Certainly, also penetrate electronics near the edge part of upper electrode 14.

The second electronics shoot mode then is described.At first, T1 (phase I) between first period of output of Fig. 9 applies the voltage V3 higher than reference voltage on upper electrode 14, apply the voltage V4 lower than reference voltage on lower electrode 16.T1 between this first period of output carries out being the preparation of penetrating electronics (for example to the polarization of a direction of emitter portion 12 etc.).Follow T2 (second stage) between second period of output, the voltage level of driving voltage Va changes with falling sharply, that is on upper electrode 14, apply the voltage V4 lower than reference voltage, on lower electrode 16, apply the voltage V3 higher, this time, at above-mentioned triple junction place electric field takes place and concentrate than reference voltage, because this electric field is concentrated, penetrate primary electrons from upper electrode 14, in emitter portion 12, impact near the edge part of the part exposed from breakthrough part 20 and upper electrode 14.Thus, as shown in figure 10, the part of impacting from primary electron penetrates secondary electron (reflection electronic that contains primary electron).That is the initial stage of T2 between second period of output penetrates secondary electron near the peripheral portion of described breakthrough part 20 and upper electrode 14.

Then, in the electron emitting element 10A of this first example, because on upper electrode 14, form a plurality of breakthrough parts 20, so near the peripheral portion of each breakthrough part 20 and upper electrode 14, penetrate electronics equably, reduce the dispersiveness that all electronics penetrate characteristic, electronics penetrates control and becomes easily, and simultaneously, electronics penetrates efficient and improves.

In addition, in first example, because form gap 28, so when applying driving Va voltage, the part in this gap 28 becomes, and the generation electric field is concentrated easily in the

eaves portion

26 and 12 in the emitter portion of upper electrode 14.This point is related to the high efficiency that electronics penetrates, and can realize the lower voltage (penetrating electronics under low voltage level) of driving voltage.

As mentioned above, in first example, because upper electrode 14, form eaves portion 26, become big, penetrate from eaves portion 26 electronics of upper electrode 14 and become easy so be aided with to concentrate at the part electric field in above-mentioned gap 28 at the edge part of breakthrough part 20.This point is related to big output, high efficiency that electronics penetrates, can realize the lower voltage of driving voltage Va.Thus, for example can seek the high brightnessization of that a plurality of electron emitting element arranged side by side constitutes, for example display or light source.In addition, no matter make any of first above-mentioned electronics shoot mode (making the mode of the electronics ejaculation of savings in the emitter portion 12) or the second electronics shoot mode (allow and impact the mode that breakthrough part 12 penetrates secondary electrons) from the primary electron of upper electrode 14, because the eaves portion 26 of upper electrode 14 is all as gate electrode (control electrode, focused electron lens etc.) effect is so can improve the rectilinear propagation that penetrates electronics.This point, in the occasion that constitutes as the electron source of display, very favourable aspect crosstalking in reduction.

Like this, in the electron emitting element 10A of first example, the high electric field of generation is concentrated, and, can make a plurality of electronics and penetrate the position, penetrate for electronics and can either realize big output, high efficiency, also can realize low voltage drive (low consumption electric power).

Especially, in first example, at least emitter portion 12 above, form by dielectric particle edges form concavo-convex 22, upper electrode 14 forms breakthrough part 20 in the part of the recess 24 at the dielectric particle edges of correspondence place, so can realize the eaves portion 26 of upper electrode 14 simply.

In addition, because get emitter portion 12 above, that is the maximum angle θ at the angle that 26a becomes below the eaves portion 26 of the surface (internal face of recess 24) of the protuberance 30 at dielectric particle edges place and upper electrode 14 is 1 °≤θ≤60 °, the largest interval d of the vertical direction below the eaves portion 26 of the surface (internal face of recess 24) of the protuberance 30 at dielectric particle edges place of emitter portion 12 and upper electrode 14 between 26a is 0 μ m＜d≤10 μ m, by such structure, the degree that the electric field of 28 part is concentrated becomes bigger, can realize the big output that electronics penetrates, the lower voltage of high efficiency and driving voltage.

In addition, in this first example, breakthrough part 20 is done the shape of pore-forming 32.As shown in Figure 3, in emitter portion 12, according to the driving voltage Va polarization reversal that between upper electrode 14 and lower electrode 16 (with reference to Fig. 2), applies or the part of variation, forming part (first) 40 under the upper electrode 14 and corresponding interior Zhou Dynasty from breakthrough part 20 to the part (second portion) 42 in the interior side's of breakthrough part 20 zone, particularly, second portion 42, the degree of concentrating according to level or the electric field of driving voltage Va changes.Therefore, in this first example, the average diameter of getting hole 32 is more than or equal to 0.1 μ m, smaller or equal to 10 μ m.As in this scope, during distributing, the ejaculation of the electronics that penetrates by breakthrough part 20 almost do not disperse, can penetrate electronics more efficiently.

In addition, 32 average diameter is less than the occasion of 0.1 μ m in the hole, and the zone of accumulated electrons narrows down, and the amount of electrons of ejaculation tails off.Certainly, also can consider to be provided with a plurality of holes 32, but be accompanied by difficulty, the possibility that exists manufacturing cost to uprise.If the average diameter in hole 32 surpasses 10 μ m, then the part that the described breakthrough part 20 from emitter portion 12 exposes, help the ratio (occupation rate) of the part (second portion) 42 of electronics ejaculation to diminish, the ejaculation efficient of electronics reduces.

As the cross sectional shape of the eaves portion 26 of upper electrode 14, can get top and following all horizontally extending shape as shown in Figure 3, also can be as shown in figure 11, the following 26a of eaves portion 26 is the upper end projection upward of level, eaves portion 26 almost.In addition, can be as shown in figure 12, the following 26a of eaves portion 26 tilts upward with the center towards breakthrough part 20, also can be as shown in figure 13, the following 26a of eaves portion 26 tilts downwards with the center towards breakthrough part 20.The example of Figure 11 can make the function as gate electrode improve, and in the example of Figure 13, because the part in gap 28 narrows down, is more prone to so can make electric field concentrate to become, and improves big output, high efficiency that electronics penetrates.

In addition, in this first example, as shown in figure 14, in electrical action, between upper electrode 14 and lower electrode 16, become capacitor C1 that formation causes by emitter portion 12 and the shape of the aggregate of a plurality of capacitor Ca of causing by each gap 28.That is a plurality of capacitor Ca that caused by each gap 28 constitute as a capacitor C2 in parallel mutually, in equivalent circuit, become the shape of the capacitor C1 that on the capacitor C2 that is caused by aggregate series connection causes by emitter portion 12.

In fact, not the capacitor C1 that former state is connected unchangeably and caused by emitter portion 12 on the capacitor C2 that is caused by aggregate, but according to the formation number of the breakthrough part 20 of upper electrode 14 or all formation areas etc., the series capacitors composition changes.

Here, as shown in figure 15, for example in the capacitor C1 that is caused by emitter portion 12, being envisioned for it 25% is and the occasion of the capacitor C2 series connection that caused by aggregate to carry out calculation of capacity.At first, thus the part in gap 28 because be that the vacuum permittivity is 1.Then, the area that the largest interval d in gap 28 is taken as the part in 0.1 μ m, a gap 28 is taken as S=1 μ m * 1 μ m, and the number of getting gap 28 is 10000.In addition, if the subtend area that the permittivity of emitter portion 12 is 2000, the thickness of emitter portion 12 is 20 μ m, upper electrode 14 and lower electrode 16 is 200 μ m * 200 μ m, then the capability value of the capacitor C2 that is caused by aggregate is 0.885pF, the capability value of the capacitor C1 that caused by emitter portion 12 is 35.4pF.Then, in the capacitor C1 that causes by emitter portion 12, be taken as at all 25% o'clock in the part with the capacitor C2 series connection that is caused by aggregate, capacitance in the part of this series connection (capacitance that comprises the capacitance of the capacitor C2 that is caused by aggregate) is that 0.805pF, remaining capacitance are 26.6pF.

Because the part of these series connection and rest parts parallel connection, so all capacitances are 27.5pF.This capacitance, be the capacitor C1 that causes by emitter portion 12 capacitance 35.4pF 78%.That is all capacitances are littler than the capacitance of the capacitor C1 that is caused by emitter portion 12.

Like this, aggregate about the capacitor Ca that causes by a plurality of gaps 28, the capacitance of the capacitor Ca that is caused by gap 28 diminishes relatively, from with the dividing potential drop of the capacitor C1 that causes by emitter portion 12, applied voltage Va almost all is applied on the gap 28, in each gap 28, can realize the big outputization that electronics penetrates.

In addition, because the capacitor C2 that is caused by aggregate becomes the structure of connecting with the capacitor C1 that is caused by emitter portion 12, so all capacitances become littler than the capacitance of the capacitor C1 that is caused by emitter portion 12.Therefore, can obtain electronics and penetrate big output, whole consumption electric power such Ideal Characteristics that diminishes.

Have again, in the electron emitting element 10A of this first example, because use glass substrate 11, so easily as large-area plate, and, can reduce product cost.In addition, the low temperatureization of treatment temperature of the manufacturing of electron emitting element 10A can be promoted, the cost degradation of equipment can be realized.Also can use sintered glass ceramics as glass substrate 11.In this occasion, different as treatment temperature with general glass, can use 600～800 ℃ scope, expanded the degree of freedom that material is selected.

Three variation of the electron emitting element 10A of above-mentioned first example are described below with reference to Figure 16～Figure 18.

At first, the electron emitting element 10Aa of first variation, as shown in figure 16, the shape of breakthrough part 20, the shape of particularly seeing from above are the shapes of otch 44, this point is different.As the shape of otch 44, as shown in figure 16, preferably form the otch 46 of the broach shape of a plurality of otch 44 continuously.In this occasion, the dispersiveness that distributes in the ejaculation that reduces the electronics that penetrates by breakthrough part 20, efficiently penetrate aspect the electronics very favourable.Particularly, the mean breadth that it is desirable to otch 44 is got more than or equal to 0.1 μ m, smaller or equal to 10 μ m.This mean breadth, the length of each different a plurality of line segments of the center line of expression quadrature otch 44 average.

The electron emitting element 10Ab of second variation, as shown in figure 17, the shape of breakthrough part 20, the shape of particularly seeing from above are slits 48, this point is different.Here, so-called slit 48 refers to that the length of long axis direction (vertically) is more than 10 times of length of short-axis direction (laterally).Therefore, can be the 10 times shapes that are defined as hole 32 (with reference to Fig. 4) of the length of long axis direction (vertically) less than the length of short-axis direction (laterally).In addition, also comprising 32 connections of a plurality of holes as slit links together.In this occasion, it is desirable to, the width of slit 48 is more than or equal to 0.1 μ m, smaller or equal to 10 μ m.This be because the dispersiveness that distributes in the ejaculation that reduces the electronics that penetrates by breakthrough part 20, efficiently penetrate aspect the electronics very favourable.This mean breadth, the length of each different a plurality of line segments of the center line of expression quadrature slit 48 average.

The electron emitting element 10Ac of the 3rd variation, as shown in figure 18, in the upper surface of emitter portion 12, in the part of corresponding breakthrough part 20, for example have floating electrode 50 in the recess 24 of dielectric particle edges, this point is different.In this kind occasion, because floating electrode 50 also becomes the electronics supply source, so in the ejaculation stage of electronics (second stage), most electronics are penetrated to the outside by breakthrough part 20.In this occasion, penetrate electronics from floating electrode 50 and can think to concentrate and cause by the triple junction electric field of floating electrode 50/ dielectric/vacuum.

Here, the characteristic of the electron emitting element 10A of first example, particularly voltage-quantity of electric charge characteristic (voltage-amount of polarization characteristic) is described.

The electron emitting element 10A of this first example, in a vacuum, as shown in figure 19, depicting with reference voltage=0 (V) is the asymmetrical B-H loop of benchmark.

This characteristic of explanation at first, in emitter portion 12, when the part that penetrates electronics is defined as the electronics injection part, applying the some p1 (initial condition) of reference voltage, becomes the state of almost not putting aside electronics at described electronics injection part now.Thereafter, as apply negative voltage, then in described electronics injection part, the positive charge amount of the dipole of emitter portion 12 reverse-poleds increases, and follows this, and the upper electrode 14 that takes place from the phase I penetrates towards the electronics of electronics injection part, just begins to put aside electronics.When the level that makes negative voltage increases on negative direction when going down, follow electronics savings to described electronics injection part, some p2 positive charge amount and negative charge amount at certain negative voltage become poised state, if make the level of negative voltage on negative direction, become down greatly, the amount of savings of electronics further increases, follow this, become the state that negative charge amount is Duoed than the positive charge amount.Become the savings saturation condition of electronics at a p3.The amount of the negative electrical charge here is the total of negative charge amount of the dipole of the amount of remaining electronics of former state savings and emitter portion 12 reverse-poleds.

, make the level of negative voltage begin diminish thereafter, and then, surpass reference voltage and apply positive voltage, at a p4, the ejaculation of the electronics in the beginning second stage.As make this positive voltage become big in positive direction, and then the ejaculation amount of electronics increases, and at a p5, positive charge amount and negative charge amount become poised state.Then, at a p6, the electronics of savings almost all penetrates, and it is identical with initial condition substantially that the difference of the amount of positive charge and the amount of negative electrical charge becomes.That is the savings of electronics almost disappears, and is the state that has only the negative electrical charge of the dipole of emitter portion 12 polarization to present at the electronics injection part.

So, as the part of the feature of this characteristic, for following some.

(1) be that the negative voltage at the some p2 place of poised state is the positive voltage at V1, some p5 place when being V2 getting positive charge amount and negative charge amount,

|V1|＜|V2|。

(2) more detailed theory, be 1.5 * | V1|＜| V2|.

(3) be the ratio of the variation of the positive charge amount at Δ Q1/ Δ V1, some p5 place and negative charge amount when being Δ Q2/ Δ V2 in the ratio of the variation of positive charge amount of getting a p2 place and negative charge amount, be

(ΔQ1/ΔV1)＞(ΔQ2/ΔV2)。

(4) holding the voltage that becomes saturation condition the power taking subproduct is voltage that V3, electronics begin to penetrate when being V4, is

1≤|V4|/|V3|≤1.5。

The characteristic of Figure 19 is described with the position of voltage-amount of polarization characteristic below.Imagination is in initial condition, and emitter portion 12 is polarized in a direction, and for example the negative pole of the dipole occasion that becomes the state (with reference to Figure 20 A) above emitter portion 12 describes.

At first, as shown in figure 19, at the some p1 (initial condition) that applies reference voltage (for example 0V), shown in Figure 20 A, because become the state of negative pole above emitter portion 12 of dipole, become the state that electronics is put aside hardly on emitter portion 12.

, as apply negative voltage and make the level of this negative voltage in negative direction become big, then begin counter-rotating, become whole polarization reversals (with reference to Figure 20 B) at the some p3 of Figure 19 near (with reference to the some p2 of Figure 19) polarization that surpasses negative coercive voltage thereafter.By this polarization reversal, at above-mentioned triple junction place electric field taking place concentrates, generation is penetrated from the electronics of the upper electrode during phase I 14 towards emitter portion 12, for example in emitter portion 12, near partial product electric power storage (with reference to Figure 20 C) the edge part of part that the breakthrough part 20 from upper electrode 14 exposes or upper electrode 14.Particularly, become from upper electrode 14, the part of exposing in emitter portion 12, from the breakthrough part 20 of upper electrode 14 penetrates electronics (the inner ejaculation).Then, become the saturation condition of electronics savings at the some p3 of Figure 19.

, make the level of negative voltage continue diminish thereafter, and then, apply positive voltage as surpassing reference voltage, then arrive before certain voltage level, keep the top electriferous state (with reference to Figure 21 A) of emitter portion 12 always.If make the level of positive voltage further become big, in front of the some p4 of Figure 19, the negative pole of generation dipole begins the zone (with reference to Figure 21 B) above emitter portion 12, and then, electrical level rising is after the some p4 of Figure 19, by the coulomb repulsion power that the negative pole by dipole causes, begin to penetrate electronics (with reference to Figure 21 C).As make this positive voltage on positive direction, become big, then the ejaculation amount of electronics increases, and enlarges in the zone of counter-rotating once more near (some p5) polarization that surpasses positive coercive voltage, at a p6, the electronics of savings is almost all penetrated, and almost the amount of polarization with initial condition is identical for the amount of polarization of this moment.

So, as the part of the feature of the characteristic of this electron emitting element 10A, for following some.

(A) to get negative coercive voltage be v1, when positive coercive voltage is v2, be

|v1|＜|v2|。

(B) more detailed theory, be 1.5 * | v1|＜| v2|.

(C) ratio in the variation of getting the polarization when applying negative coercive voltage v1 is Δ q1/ Δ v1, when the ratio of the variation of the polarization when applying positive coercive voltage v2 is Δ q2/ Δ v2, is

(Δq1/Δv1)＞(Δq2/Δv2)。

(D) holding the voltage that becomes saturation condition the power taking subproduct is voltage that v3, electronics begin to penetrate when being v4,

1≤|v4|/|v3|≤1.5。

The electron emitting element 10A of first example, because have characteristic as described above, so can be applied to have a plurality of electron emitting element 10A that corresponding a plurality of pixel arranges simply, make the light source of light-emitting phosphor or carry out the display that pixel shows by ejaculation by the electronics of each electron emitting element 10A.

Below, display that the electron emitting element 10A that uses first example constitutes or light source (below be designated as display etc. 100) are described.In addition, in the following description, be designated as " pixel ", be designated as " light-emitting component " about the unit element of light source about the unit element of display.

This display etc. 100, as shown in figure 22, have a plurality of electron emitting element 10A respective pixel be arranged in rectangular or zigzag shape this example electron emitting device (luminous displaing part) 102 and be used to drive the drive circuit 104 of this luminous displaing part 102.In this occasion, distribute an electron emitting element 10A can for each pixel (light-emitting component), distribute a plurality of electron emitting element 10A also can for each pixel (light-emitting component).In this example, simple for illustrating, imagination distributes the situation of an electron emitting element 10A to describe for each pixel (light-emitting component).

This drive circuit 104 is made as a plurality of capable selection wire 106 of selecting row for luminous displaing part 102 cloth, is made as many signal line 108 of supplying with data-signal Sd for luminous displaing part 102 cloth equally.

Have, this drive circuit 104 has again: selection wire is optionally supplied with selection signal Ss, the row of selective sequential electron emitting element 10A is selected circuit 110 in a capable unit to going; Supply with the signal supply circuit 112 of data-signal Sd respectively to holding wire 108 parallel output data signal Sd, for the row (selecting row) of selecting circuit to select by row; With the signal control circuit 114 of selecting circuit 110 and signal supply circuit 112 according to the signal of video signal Sv and the synchronizing signal Sc control row of input.

Be expert at and select to connect on circuit 110 and the signal supply circuit 112 power circuit 116 (for example 50V and 0V), particularly, be expert at and select to be connected the pulse power 118 between negative line and GND (ground connection) between circuit 110 and the power circuit 116.Td is taken as reference voltage (for example 0V) during electric charge savings described later, Th is taken as the voltage (voltage waveform of pulse type for example-400V) between light emission period in the pulse power 118 outputs.

Row is selected circuit 110, and Td is for selecting line output to select signal Ss, for non-selection line output non-select signal Sn during the electric charge savings.In addition, row is selected circuit 110, and (for example-400V) constant voltage of addition (for example-350V) from the supply voltage (for example 50V) of power circuit 116 with from the voltage of the pulse power 118 in Th output between light emission period.

Signal supply circuit 112 has pulse generation circuit 120 and Modulation and Amplitude Modulation circuit 122.Pulse generation circuit 120, Td during the electric charge savings generates and exports the pulse signal Sp that has certain amplitude (for example 50V) with certain pulse period,, Th between light emission period, output reference voltage (for example 0V).

Modulation and Amplitude Modulation circuit 122, Td during the electric charge savings, correspondence is selected the pulse signal Sp of the intensity level Modulation and Amplitude Modulation of capable pixel (light-emitting component) from pulse generation circuit 120 about each, data-signal Sd output as the pixel (light-emitting component) of selecting row about each, Th between light emission period, the constant output of former state is from the reference voltage of pulse generation circuit 120.Their timing controlled and to the supply of the Modulation and Amplitude Modulation circuit 122 of the intensity level of a plurality of pixels (light-emitting component) of selecting is undertaken by signal control circuit 114.

For example as three examples in Figure 23 A～Figure 23 C, representing, in the low occasion of intensity level, make the amplitude of pulse signal Sp become low level Vsl (with reference to Figure 23 A), in intensity level is middle occasion, make the amplitude of pulse signal Sp become intermediate level Vsm (with reference to Figure 23 B), the occasion that intensity level is high makes the amplitude of pulse signal Sp become high level Vsh (with reference to Figure 23 C).In this embodiment, show and be divided into 3 other examples of level, but in the occasion that is applied to display etc. 100, the intensity level of respective pixel (light-emitting component) is for example 128 grades or 256 grades to pulse signal Sp Modulation and Amplitude Modulation.

The variation of signal supply circuit 112 is described with reference to Figure 24～25C here.

The signal supply circuit 112 of this variation as shown in figure 24, has pulse generation circuit 124 and pulse width modulation circuit 126.Pulse generation circuit 124, Td during the electric charge savings, in the voltage waveform that on electron emitting element 10A, applies (in Figure 25 A～Figure 25 C, representing) with solid line, the pulse signal Spa (in Figure 25 A～Figure 25 C, dotting) that the waveform of rising part generates, output level changes continuously, Th between light emission period, output reference voltage.Then, pulse width modulation circuit 126, during electric charge savings among the Td, corresponding select the intensity level modulation of pixel (light-emitting component) of row from the pulse duration Wp (with reference to Figure 25 A～Figure 25 C) of the pulse signal Spa of pulse generation circuit 124, as the data-signal Sd output of the pixel (light-emitting component) of selecting row about each about each.The constant output of Th former state is from the reference voltage of pulse generation circuit 124 between light emission period.In this occasion, their timing controlled and for the supply of the pulse width modulation circuit 126 of the intensity level of a plurality of pixels (light-emitting component) of selecting is also undertaken by signal control circuit 114.

For example, as three examples in Figure 25 A～Figure 25 C, representing, in the low occasion of intensity level, pulse signal Spa pulse duration Wp is shortened, making substantial amplitude is low level Vsl (with reference to Figure 25 A), in intensity level is middle occasion, make the pulse duration Wp of pulse signal Spa become middle length, make substantial amplitude become intermediate level Vsm (with reference to Figure 25 B), in the high occasion of intensity level, make the pulse duration Wp of pulse signal Spa elongated, make substantial amplitude become high level Vsh (with reference to Figure 25 C).Here, express 3 examples, but in the occasion that is applied to display etc. 100, the intensity level of respective pixel (light-emitting component) is for example 128 grades or 256 grades to pulse signal Spa pulse width modulation.

Here, as with for 3 the amplitude-modulated examples of the pulse signal Sp shown in Figure 23 A～Figure 23 C with observe the variation of the performance plot of the occasion that the above-mentioned level that makes the negative voltage of the savings that relates to electronics changes for the association between the example of 3 pulse width modulations of the pulse signal Spa shown in Figure 25 A～Figure 25 C, then in the level Vsl of the negative voltage shown in Figure 23 A and Figure 25 A, shown in Figure 26 A, the amount of the electronics of putting aside in electron emitting element 10A is few.In the level Vsm of the negative voltage shown in Figure 23 B and Figure 25 B, shown in Figure 26 B, the amount of the electronics of savings mediates, in the level Vsh of the negative voltage shown in Figure 23 C and Figure 25 C, shown in Figure 26 C, the amount of the electronics of savings is many, becomes almost saturated state.

But, shown in these Figure 26 A～26C, begin to penetrate electronics some p4 voltage level much at one.That is obviously, behind the savings electronics, even applying the voltage variation before the voltage level shown in the some p4, the amount of savings of electronics does not almost change yet, the effect of performance storage.

In addition, in the occasion that the electron emitting element 10A of first example is used as the pixel (light-emitting component) of display etc. 100, as shown in figure 27, above upper electrode 14, for example, the transparent panel 130 of configuration glass or acrylic glass system, the collector electrode 132 that (face relative with upper electrode 14) configuration for example is made of transparency electrode in the inside of this transparent panel 130, coating fluorophor 134 on this collector electrode 132.In addition, on collector electrode 132, connect bias voltage source 136 (collector voltage Vc) by resistance.In addition, electron emitting element 10A is certain, is configured in the vacuum space.Vacuum degree in the environmental gas it is desirable to 10 ²～10 ^-6Pa, better is 10 ^-3～10 ^-5Pa.

Select the reason of such scope, be because in low vacuum, (1) because the gas molecule in the space is many, so generate plasma easily, as excessive generation plasma, then its cation impacts upper electrode 14 in large quantities, and the danger that promotes damage is arranged, perhaps (2) have impacted gas molecule before arriving collector electrode 132 penetrating electronics, the danger that the excitation of the fluorophor 134 that is caused by the electronics with collector voltage Vc acceleration can not be carried out fully.

On the other hand, be because in high vacuum, though the point of concentrating from electric field penetrates electronics easily, exist the support of tectosome and the hermetic unit of vacuum to become the problem that is unfavorable for miniaturization greatly.

In the example of Figure 27, the inside at transparent panel 130 forms collector electrode 132, (face relative with upper electrode 14) gone up and formed fluorophor 134 on the surface of this collector electrode 132, but, in addition, also can form fluorophor 134 in the inside of transparent panel 130 as shown in figure 28, make this fluorophor 134 of covering form collector electrode 132 like that.

This is the structure of using in CRT etc., and collector electrode 132 is as the metal backing effect.The electronics perforation collector electrode 132 that penetrates from emitter portion 12 enters fluorophor 134, encourages this fluorophor 134.Therefore, collector electrode 132 is the thickness that electronics can connect degree, wishes smaller or equal to 100nm.Electronic kinetic energy is big more, can do collector electrode 132 thickly more.

By making such structure, can play following effect.

(a) not the occasion of conductivity at fluorophor 134, can prevent the charged of fluorophor 134, keep the accelerating field of electronics.

(b) collector electrode 132 reflected fluorescent light bodies 134 is luminous, can penetrate the luminous of fluorophor 134 to transparent panel 130 sides (light-emitting area side) expeditiously.

(c) can prevent excessive electron bombardment, can prevent the deterioration of fluorophor 134 or gases take place from fluorophor 134 to fluorophor 134.

Expression is about 4 experimental examples (first to the 4th experimental example) of the electron emitting element 10A of this first example below.

First experimental example is the experimental example of ejaculation state of observing the electronics of electron emitting element 10A.That is, as shown in figure 29, apply for electron emitting element 10A have-voltage of 70V write pulse Pw, make electron emitting element 10A savings electronics, thereafter, what apply voltage with 280V lights pulse Ph, makes the ejaculation electronics.The ejaculation state of electronics detects the luminous of fluorophor 134 with light receiving element (optical diode) and measures.Detection waveform is represented in Figure 29 B.In addition, getting the duty ratio that writes pulse Pw and light pulse Ph is 50%.

From this first experimental example as can be known, luminous from lighting the pulse Ph beginning of rising the way, light the luminous end of starting stage of pulse Ph at this.Therefore, though can think light pulse Ph during shorter also to luminous not influence.This point is related to and shortens during high-tension the applying, and is very favourable for the reduction that realizes consumption electric power.

Second experimental example is the ejaculation amount of observing the electronics of electron emitting element 10A, the experimental example that how to change with the amplitude that writes pulse Pw shown in Figure 30.The variation of the ejaculation amount of electronics, identical with first experimental example, detect the luminous of fluorophor 134 with light receiving element (optical diode) and measure.Experimental result is represented in Figure 31.

In Figure 31, solid line A represents: to get the amplitude of lighting pulse Ph be 200V, the amplitude that writes pulse Pw is changed to-characteristic of the occasion of 80V from-10V, and solid line B represents: to get the amplitude of lighting pulse Ph be 350V, the amplitude that writes pulse Pw is changed to-characteristic of the occasion of 80V from-10V.

As shown in Figure 31, write pulse Pw and be changed to-occasion of 40V making as can be known from-20V, luminosity, variation almost is in line.Particularly, if at the amplitude of lighting pulse Ph is the words that compare under the occasion of the occasion of 350V and 200V, as can be known: broaden for the dynamic range that the luminosity that writes pulse Pw changes in the occasion of 350V, favourable aspect realizing the brightness raising of image in showing, contrast raising.This tendency, can think: in the scope of the amplitude setting of lighting pulse Ph before saturated to luminosity, it is favourable more to improve the amplitude light pulse Ph more, but because and the relation of the withstand voltage or consumption electric power of signal transfer system, wish to be set at only value.

The 3rd experimental example is the ejaculation amount of observing the electronics of electron emitting element 10A, the experimental example that how to change with the amplitude of lighting pulse Ph shown in Figure 30.The variation of the ejaculation amount of electronics is identical with first experimental example, detects the luminous of fluorophor 134 with light receiving element (optical diode) and measures.Experimental result is represented in Figure 32.

In Figure 32, solid line C, expression get the amplitude that writes pulse Pw for-40V, make the amplitude of lighting pulse Ph be changed to the characteristic of the occasion of 400V from 50V, solid line D, expression get the amplitude that writes pulse Pw for-70V, make the amplitude of lighting pulse Ph be changed to the characteristic of the occasion of 400V from 50V.

As shown in Figure 32, as can be known: light pulse Ph and be changed to the occasion of 300V making, the luminosity variation that almost is in line from 100V.Particularly, if the amplitude that writes pulse Pw for the occasion of-40V and-compare under the occasion of 70V, as can be known: the occasion at-70V broadens for the dynamic range that the luminosity of lighting pulse Ph changes, and is favourable aspect realizing the brightness raising of image in showing, contrast raising.This tendency, can think in the scope of the amplitude setting that writes pulse Pw before saturated to luminosity, it is favourable more to improve the amplitude (referring to absolute value in this occasion) that writes pulse Pw more, but in this occasion, owing to, also wish to be set at only value with the relation of the withstand voltage of signal transfer system or consumption electric power.

The 4th experimental example is the ejaculation amount of observing the electronics of electron emitting element 10A, the experimental example that how to change with the level of Figure 27 or collector voltage Vc shown in Figure 28.The variation of the ejaculation amount of electronics is identical with first experimental example, detects the luminous of fluorophor 134 with light receiving element (optical diode) and measures.Experimental result is represented in Figure 33.

In Figure 33, solid line E, the level that collector voltage Vc is got in expression is 3kV, make the amplitude of lighting pulse Ph be changed to the characteristic of the occasion of 500V from 80V, solid line F, and the level that collector voltage Vc is got in expression is 7kV, makes the amplitude of lighting pulse Ph be changed to the characteristic of the occasion of 500V from 80V.

As shown in Figure 33, collector voltage Vc gets the side of 7kV as can be known, broadens for the dynamic range that the luminosity of lighting pulse Ph changes than the occasion of 3kV, and is favourable aspect realizing the brightness raising of image in showing, contrast raising.This tendency, the level that can think to improve more collector voltage Vc is favourable more, but in this occasion because and the relation of the withstand voltage or consumption electric power of signal transfer system, also wish to be set at only value.

A driving method of above-mentioned display etc. 100 is described with reference to Figure 34 and Figure 35 here.Figure 34 represents the action of the pixel (light-emitting component) of delegation's one row, two row, one row and the capable row of n typically.In addition, electron emitting element 10A used herein, the coercive voltage v1 with some p2 place of Figure 19 for example for the coercive voltage v2 at-20V, some p5 place for the voltage v3 at+70V, some p3 place for-50V, the voltage v4 that puts the p4 place is+characteristic of 50V.

In addition, as shown in figure 34, when during the demonstration of getting an image, being a frame, in this frame, include during electric charge savings Th between Td and light emission period, during an electric charge savings in the Td, comprise Ts during n the selection.Because Ts became during the selection of corresponding respectively row during each was selected, so then become Tn during the non-selection for not corresponding n-1 row.

Then, this driving method, during electric charge savings among the Td, scan all electron emitting element 10A, by applying the corresponding voltage of intensity level with pixel (light-emitting component), and the intensity level of this pixel (light-emitting component) corresponds respectively to a plurality of electron emitting element 10As corresponding with the pixel (light-emitting component) of ON object (luminous object), put aside the electric charge (electronics) of the amount corresponding with the intensity level of pixel (light-emitting component), and the intensity level of this pixel (light-emitting component) corresponds respectively to a plurality of electron emitting element 10As corresponding with the pixel (light-emitting component) of ON object (luminous object), Th between light emission period below, apply certain voltage for whole electron emitting element 10A, make from corresponding ON object pixels

A plurality of electron emitting element 10A of (light-emitting component) penetrate the electronics with the corresponding amount of the intensity level of corresponding pixel (light-emitting component) respectively, make ON object pixels (light-emitting component) luminous.

Specifically describe, as shown in figure 35, at first, during the selection of first row, among the Ts, on the capable selection wire 106 of first row, for example supply with the selection signal Ss of 50V, on the capable selection wire 106 of other row, for example supply with the non-select signal Sn of 0V.In the pixel (light-emitting component) of first row, give the voltage of the data-signal Sd that the holding wire 108 of the pixel (light-emitting component) will be set to ON (luminous) supplies with, be more than or equal to 0V, smaller or equal to the scope of 30V, and become the corresponding voltage of intensity level with each self-corresponding pixel (light-emitting component).Words as the intensity level maximum then become 0V.To the modulation of intensity level that should data-signal Sd, undertaken by Modulation and Amplitude Modulation circuit 122 shown in Figure 22 or pulse width modulation circuit shown in Figure 24 126.

Thus, 16 of the upper electrode 14 of electron emitting element 10A of each pixel (light-emitting component) that will be set to ON that corresponds respectively to first row and lower electrodes respectively the corresponding brightness level apply more than or equal to-50V, smaller or equal to the voltage of-20V.Its result, the electronics of the corresponding voltage that applies of savings on above-mentioned each electron emitting element 10A.For example with the corresponding electron emitting element of pixel (light-emitting component) of first row first row, for example be maximum brightness level, thus the state of some p3 of the characteristic of Figure 19 become, in emitter portion 12, in the part that the breakthrough part 20 from upper electrode 14 exposes, the electronics of savings maximum.

In addition, supply with the voltage of the data-signal Sd of the electron emitting element 10A corresponding with the pixel (light-emitting component) of expression OFF (extinguishing), for example be 50V, thus, on the electron emitting element 10A corresponding with OFF object pixels (light-emitting component), apply 0V, the state of some p1 that this just becomes the characteristic of Figure 19 does not carry out the savings of electronics.

After the supply to the first data-signal Sd that goes finishes, during the selection of second row, among the Ts,, on other capable selection wires 106 of going, supply with the non-select signal Sn of 0V at the selection signal Ss of the second capable selection wire of going, 106 supply 50V.In this occasion, also to be set to 16 of the upper electrode 14 of electron emitting element 10A of pixel (light-emitting component) of ON (luminous) and lower electrodes in correspondence, respectively the corresponding brightness level apply more than or equal to-50V, less than etc.-voltage of 20V.At this moment, be in nonselection mode, for example apply more than or equal to 0V, smaller or equal to the voltage of 50V with the upper electrode 14 of the corresponding electron emitting element 10A of pixel (light-emitting component) of first row and 16 of lower electrodes, but, because this voltage is the voltage of level of some p4 that does not reach the characteristic of Figure 19, so in first row, can will not be set to the electron emitting element 10A ejaculation electronics of the pixel (light-emitting component) of ON (luminous) from correspondence.That is the pixel (light-emitting component) of first row of nonselection mode can not be subjected to the influence of the data-signal Sd that supplies with to the pixel (light-emitting component) of second row of selection mode.

Below same, during the capable selection of n among the Ts, the selection signal Ss that supplies with 50V for the capable capable selection wire of n 106 is to the non-select signal Sn of capable selection wires 106 supply 0V of other row.In this occasion, also correspondence to be set to 16 of the upper electrode 14 of electron emitting element 10A of pixel (light-emitting component) of ON (luminous) and lower electrodes respectively the corresponding brightness level apply more than or equal to-50V, smaller or equal to the voltage of-20V.At this moment, being in the upper electrode 14 of electron emitting element 10A of each pixel (light-emitting component) of row of 1 row of nonselection mode～(n-1) and 16 of lower electrodes in correspondence applies more than or equal to 0V, smaller or equal to the voltage of 50V, but, in each pixel (light-emitting component) of these nonselection modes, can to not be set to the electron emitting element 10A ejaculation electronics of the pixel (light-emitting component) of ON (luminous) from correspondence.

The stage of Ts enters Th between light emission period during having passed through the capable selection of n.Between this light emission period among the Th, on the upper electrode 14 of whole electron emitting element 10A, apply reference voltage (for example 0V) by signal supply circuit 112, on the lower electrode 16 of whole electron emitting element 10A, apply-voltage of 350V (pulse power 118-the supply voltage 50V of the capable selection of 400V+ circuit 110).Thus, between the upper electrode 14 of whole electron emitting element 10A and lower electrode 16, apply high voltage (+350V).Whole electron emitting element 10A become the state of some p6 of the characteristic of Figure 19 respectively, as shown in figure 21, in emitter portion 12, penetrate electronics from the described part of having put aside electronics by breakthrough part 20.Certainly, also penetrate electronics near the peripheral portion of upper electrode 14.

That is the electron emitting element 10A that will be set to the pixel (light-emitting component) of ON (luminous) from correspondence penetrates electronics, and the electronics of ejaculation is transmitted to the collector electrode 132 of corresponding these electron emitting elements 10A, and the fluorophor 134 that excitation is corresponding makes it luminous.Thus, from the surperficial display image of transparent panel 130.

Same later on, in frame unit, Td during the electric charge savings, the electron emitting element 10A that will be set to the pixel (light-emitting component) of ON (luminous) in correspondence goes up the savings electronics, Th between light emission period, make light-emitting phosphor by the electronics that penetrates savings, from the surface demonstration moving image or the rest image of transparent panel 130.

Like this, in the electron emitting element of first example, have a plurality of electron emitting element 10A that corresponding a plurality of pixel (light-emitting component) is arranged, easily be used for carrying out display that image shows etc. 100 by penetrate electronics from each electron emitting element 10A.

For example, as mentioned above, Td during the electric charge savings in a frame, scan whole electron emitting elements, apply the corresponding voltage of intensity level with pixel (light-emitting component), and the intensity level of this pixel (light-emitting component) corresponds respectively to a plurality of electron emitting element 10As corresponding with the pixel (light-emitting component) of ON object (luminous object), thus, put aside the electric charge of the amount corresponding with the intensity level of pixel (light-emitting component), and the intensity level of this pixel (light-emitting component) corresponds respectively to a plurality of electron emitting element 10As corresponding with the pixel (light-emitting component) of ON object (luminous object), between light emission period below among the Th, all applying certain voltage on the electron emitting element 10A, penetrate electronics with the corresponding amount of the intensity level of corresponding pixel (light-emitting component) respectively from a plurality of electron emitting element 10A of corresponding ON object pixels (light-emitting component), can make ON object pixels (light-emitting component) luminous.

In addition, in this first example, for example electronics savings becomes the relation of the voltage V3 of saturation condition and the voltage V4 that electronics begins to penetrate, be 1≤| V4|/| V3|≤1.5.

Usually, for example, 10A is arranged in matrix shape electron emitting element, in delegation unit, select electron emitting element 10A synchronously with horizontal scan period, when supplying with the data-signal Sd corresponding respectively with the intensity level of pixel (light-emitting component) for the electron emitting element 10A that is in selection mode, in the pixel (light-emitting component) of nonselection mode, also supply with data-signal Sd.

The electron emitting element 10A of nonselection mode is subjected to the influence of data-signal Sd for example to penetrate electronics, and then existence causes the deterioration of image quality of display image or the problem that contrast reduces.

But, in this first example, because have above-mentioned characteristic, so the voltage level of the data-signal Sd of the electron emitting element 10A that supplies with selection mode, be taken as voltage arbitrarily from reference voltage to voltage V3, electron emitting element 10A for nonselection mode, even make the so simple voltage relationship of signal of for example setting the reversed polarity of supplying with data-signal Sd for, the pixel of nonselection mode (light-emitting component) can not be subjected to the influence that caused by the data-signal Sd to the pixel (light-emitting component) of selection mode yet.That is the electronics amount of savings of each pixel (light-emitting component) of putting aside among the Ts during the selection of each pixel (light-emitting component) (carried charge of the emitter portion 12 among each electron emitting element 10A) is maintained to carry out among the Th between next light emission period and penetrates electronics.Its result can realize the storage effect in each pixel (light-emitting component), can realize high brightness, high-contrastization.

On the other hand, in this display etc. 100, during electric charge savings among the Td, all putting aside necessary electric charge among the electron emitting element 10A, between light emission period thereafter among the Th, apply the necessary voltage of ejaculation electronics for whole electron emitting element 10A, electronics is penetrated from a plurality of electron emitting element 10A corresponding with ON object pixels (light-emitting component), make ON object pixels (light-emitting component) luminous.

Usually, the occasion constituting pixel (light-emitting component) with electron emitting element 10A for making pixel (light-emitting component) luminous, need apply high voltage on electron emitting element 10A.Therefore, behind savings electric charge when pixel (light-emitting component) scans and then make luminous occasion, show an image during (a for example frame) need apply high voltage, exist consumption electric power to become big problem.In addition, it is corresponding high-tension circuit that the circuit of select each electron emitting element 10A, supplying with data-signal Sd also needs to make.

But, in this embodiment, be behind savings electric charge on whole electron emitting element 10A, all applying voltage on the electron emitting element 10A, make the electron emitting element 10A pixel (light-emitting component) of corresponding ON object luminous.

Therefore, on whole electron emitting element 10A, be applied for make voltage (ejaculation voltage) that electronics penetrates during Th, certainly shorter than a frame, and, as known to from first experimental example shown in Figure 29 A and Figure 29 B like that, can make and shorten during penetrating voltage application, therefore, compare with luminous occasion with the savings that when pixel (light-emitting component) is scanned, carries out electric charge, can lower consumption electric power significantly.

In addition, because separated that electron emitting element 10A goes up Td during the savings electric charge and from a plurality of electron emitting element 10As corresponding with ON object pixels (light-emitting component) the ejaculation electronics during Th, so, can be implemented as the low voltage drive of the circuit of the voltage that on each electron emitting element 10A, applies the corresponding brightness level respectively.

In addition, the selection signal Ss/ non-select signal Sn of Td during the data-signal of correspondence image and the electric charge savings, need to drive by every row or every row, but as in above-mentioned example, seeing, because driving voltage can be tens of volts, can use many output drivers of the cheapness of middle uses such as fluorescent display tube.On the other hand, Th between light emission period, the voltage that electronics is fully penetrated might be also bigger than described driving voltage, but because can gather whole ON object pixels (light-emitting component) drives, so do not need the circuit block of many outputs.For example because so long as the drive circuit of the single output that constitutes with high voltage bearing discrete parts just, so remove realizing on the cost cheaply, also existing can be with the advantage of small scale in circuitry realization.Above-mentioned driving voltage and discharge voltage, thin by the thickness of emitter portion 12 is done, can realize lower voltage.Therefore, by the setting of thickness, for example also driving voltage can be made three ten-day period of hot season spy.

Have again, according to this driving method, because after being separated into the phase I of carrying out line scanning, the electronics that does not carry out the second stage of line scanning penetrates whole pixels (light-emitting component) to carry out simultaneously, so easy and resolution, picture dimension are irrespectively guaranteed fluorescent lifetime, can increase brightness.In addition because on picture show image simultaneously, so can show no false contouring or image blurring moving image.

The electron emitting element 10B of second example is described below with reference to Figure 36.

The electron emitting element 10B of this second example as shown in figure 36, has the structure almost same with the electron emitting element 10A of above-mentioned first example, but has following some feature: the constituent material of upper electrode 14 is identical with lower electrode 16; The thickness t of upper electrode 14 is thicker than 10 μ m; With use corrosion (wet corrosion, dry corrosion) or peel off, laser etc. forms breakthrough part 20 artificially.The shape of breakthrough part 20, identical with above-mentioned first example, can adopt the shape in hole 32, the shape of otch 44, the shape of slit 48.

Have, the following 26a of the edge part 26 of the breakthrough part 20 in the upper electrode 14 slowly tilts upward towards the center of breakthrough part 20 again.This shape is for example peeled off and can be formed simply by use.

In the electron emitting element 10B of this second example, same with the electron emitting element 10A of above-mentioned first example, high electric field can easily take place to be concentrated, and can manufacture a plurality of electronics and penetrate the position, can realize big output, high efficiency that electronics penetrates, also can low voltage drive (low consumption electric power).In this occasion, because use glass substrate 11, thus also make large-area sheet easily, and can realize the cost degradation of product.

In addition, the electron emitting element 10Ba of first variation as shown in figure 37 is such, also can be on emitter portion 12 in, have floating electrode 50 in the part of corresponding breakthrough part 20.

In addition, the electron emitting element 10Bb of second variation as shown in figure 38 is such, as upper electrode 14, also can form cross sectional shape and be made into electrode near T word shape.

In addition, the electron emitting element 10Bc of the 3rd variation as shown in figure 39 is such, and the shape of upper electrode 14 particularly, also can be made the shape that the edge part 26 of the breakthrough part 20 of upper electrode 14 is upturned.This point can allow in the membrane material as upper electrode 14 in advance, and the material that comprises gasification in sintering circuit gets final product.Thus, in sintering circuit, described material gasification as its vestige, forms in a plurality of breakthrough parts 20 shape that the edge part 26 of formation breakthrough part 20 is upturned on upper electrode 14.

In addition, electron emitting element of the present invention, self-evident, be not limited to above-mentioned example, can under the situation that does not break away from aim of the present invention, adopt various structures.

Claims

1. an electron emitting element is characterized in that,

Have:

Go up first electrode (16) that forms at glass substrate (11);

In the emitter portion (12) that forms by dielectric film that described first electrode (16) go up to form; With

Go up second electrode (14) that forms in described emitter portion (12);

Between described first electrode (16) and described second electrode (14), be applied for the driving voltage (Va) that penetrates electronics,

At least described second electrode (14) has a plurality of breakthrough parts (20) that expose described emitter portion (12),

The face (26a) relative with described emitter portion (12) in described second electrode (14), in the edge part (26) of described breakthrough part (20) leaves from described emitter portion (12).

2. electron emitting element according to claim 1 is characterized in that,

In described emitter portion (12), on the face that forms described second electrode (14) at least, form concavo-convex (22) that cause by dielectric particle edges,

Described second electrode (14), the part of the recess (24) in the described dielectric particle edges of correspondence forms described breakthrough part (20).

3. electron emitting element according to claim 1 and 2 is characterized in that,

Described second electrode (14) is the aggregate (17) of material (15) with a plurality of lepidiod shapes, or comprises the aggregate (21) of the conductive material (19) of the material (15) with lepidiod shape.

4. according to any one described electron emitting element in the claim 1～3, it is characterized in that,

Described first electrode (16), described emitter portion (12) and described second electrode (14), the temperature below the softening point of described glass substrate (11) is directly carried out film and is formed on described glass substrate (11).

5. according to any one described electron emitting element in the claim 1～3, it is characterized in that,

Described emitter portion (12) is bonded in described glass substrate (11) by the plate that the temperature more than the softening point of described glass substrate (11) is formed and goes up formation.

6. electron emitting device, it has at glass substrate (11) goes up a plurality of electron emitting elements (10A) that form, it is characterized in that,

Described electron emitting element (10A) has:

Go up first electrode (16) that forms at described glass substrate (11);

Go up second electrode (14) that forms in described emitter portion (12);

7. a display is characterized in that,

Have:

The described electron emitting device of claim 6;

In glass substrate (11) with formation in described electron emitting device the transparent panel (130) of the relative configuration of face of emitter portion (12);

In described transparent panel (130), on the face relative with described emitter portion (12), be used for and the electron emitting element (10A) of described electron emitting device between form the electrode (132) of electric field; With

Go up the fluorophor (134) that forms at described electrode (132);

Make the described fluorophor of electron bombardment (134) that penetrates from described electron emitting element (10A) encourage described fluorophor (134), make it luminous.

8. a light source is characterized in that,

Have:

The described electron emitting device of claim 6;

In glass substrate (11) with the transparent panel (130) of the relative configuration of face of formation emitter portion (12) in described electron emitting device;

Go up the fluorophor (134) that forms at described electrode (132);