[summary of the invention]
In view of this, LED encapsulation body with revers voltage protective device and the method for packing thereof of purpose of the present invention for providing a kind of size effectively to be reduced.
Another object of the present invention is for providing a kind of LED encapsulation body and method for packing thereof with multi-chip structure.
According to the method for packing of a kind of LED encapsulation body of the present invention, comprise following step:
Provide one can be energized the primary LED chip that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and one of be installed in this two surface lip-deep first electrode with one first polarity, reach one and one of be installed in this two surface lip-deep second electrode that has with this first opposite polarity second polarity;
Non-light in this light-emitting diode chip for backlight unit penetrates the revers voltage protection component that a revers voltage protective device is set on the surface, and this revers voltage protection component has first electrode with this first polarity, and second electrode with this second polarity;
Form one be used to set up at least one one of them electrode of this primary LED chip and this revers voltage protection component one have and the electrode of the opposite polarity polarity of this one of them electrode of this primary LED chip between the electrode bonding conductor unit that is electrically connected; And
Forming at least two is used for this electrode that is electrically connected each other is electrically connected to connection electric conductor unit outside the external circuit.
Method for packing according to another kind of LED encapsulation body of the present invention, comprise following step: provide one can be energized the light-emitting diode chip for backlight unit that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with first polarity in this two surface, reach one and be installed on identical lip-deep second electrode that has with this first opposite polarity second polarity with this first electrode;
Non-light in this light-emitting diode chip for backlight unit penetrates the revers voltage protection component that a revers voltage protective device is set on the surface, this revers voltage protection component is a capacitor, and this capacitor has near two electrodes with reciprocal polarity the electrode in two electrodes that respectively extend to this light-emitting diode chip for backlight unit;
Form an insulating barrier on this electrode of light emitting diode installation surface, this insulating barrier is the perforation that is set near the electrode this corresponding electrode that extends in light-emitting diode chip for backlight unit that forms two corresponding electrodes that are used to expose this light-emitting diode chip for backlight unit and this revers voltage protection component with pattern by exposure and development treatment;
Form an electrode bonding conductor unit, this electrode bonding conductor unit comprises two each conductors that the electrode of this electrode of light emitting diode that this perforation by this insulating barrier exposed and this revers voltage protection component is electrically connected;
Form a cover layer on the surface of this insulating barrier, this cover layer is formed with the exposed hole of a part of the conductor of two correspondences that are used to expose this electrode bonding conductor unit; And
Form at least two outside electric conductor unit that connect, each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with this part of corresponding conductor and one partly are electrically connected and the second electric conductor part of projection outside this exposed hole with this first electric conductor in the exposed hole of a correspondence.
Method for packing according to another LED encapsulation body of the present invention, comprise following step: a primary LED chip is provided, this primary LED chip have a non-light that allows extraneous light to penetrate penetrate the surface, one with should non-light penetrate the relative light in surface penetrate surface, be arranged at this non-light penetrate the surface first electrode with one first polarity, and one be arranged at this non-light and penetrate and surperficial have one and second electrode of this first opposite polarity second polarity;
Form an electrode bonding conductor unit, this electrode bonding conductor unit comprise a non-light that is formed at this primary LED chip penetrate the surface this first electrode and near surf zone on the transparent conductive metal layer;
One secondary light-emitting diode chip for backlight unit is set on this conductive metal layer, this pair light-emitting diode chip for backlight unit have a first surface that this first electrode is installed and one be equipped with this second electrode and with this first surface opposing second surface, this pair light-emitting diode chip for backlight unit is to penetrate the surface and be arranged on the conductive metal layer of this primary LED chip towards the non-light of this primary LED chip with its second surface, so that second electrode that should the pair light-emitting diode chip for backlight unit is to be electrically connected with first electrode of this primary LED chip via this conductive metal layer;
Non-light in this primary LED chip penetrates the surperficial formation one opaque cover layer of going up covering by the pair light-emitting diode chip for backlight unit, this cover layer is formed with the perforate of first electrode of two second electrodes that are used to expose this primary LED chip and this pair light-emitting diode chip for backlight unit, and
In this tectal each perforate, form an outside electric conductor unit that connects, each is outside connect electric conductor unit comprise one in the perforate of this tectal correspondence with first electric conductor that is electrically connected by this corresponding perforate institute exposed electrodes partly and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor.
Method for packing according to another LED encapsulation body of the present invention, comprise following step: provide one can be energized the primary LED chip that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate relative and the non-light that allow extraneous light to penetrate in surface and penetrate surface, one and be installed on this non-light and penetrate lip-deep first electrode with one first polarity, reach one and be installed on lip-deep second electrode that has with this first opposite polarity second polarity of this non-light ejaculation;
Penetrate on the surface in the non-light of this light-emitting diode chip for backlight unit a secondary light-emitting diode chip for backlight unit is set, this pair light-emitting diode chip for backlight unit has first electrode that this first polarity arranged, and second electrode with this second polarity;
Form an electrode bonding conductor unit that is electrically connected that is used to set up between at least one electrode that has the polarity identical one of them electrode of this primary LED chip and this revers voltage protection component one with the polarity of this one of them electrode of this primary LED chip; And
Form at least two connection electric conductor unit, outside that are used for this first, second electrode is electrically connected to external circuit.
Method for packing according to another kind of LED encapsulation body of the present invention is characterized in that: comprise following step:
Provide one can be energized the primary LED chip that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
On the non-light ejaculation surface of this light-emitting diode chip for backlight unit, a secondary light-emitting diode chip for backlight unit is set, this pair light-emitting diode chip for backlight unit has first and second electrode zones with the electrode alignment of this primary LED chip, this the first region territory has this first polarity and this second electrode region has this second polarity, and this first and second electrode zone respectively is formed with one and exposes the perforation that one of this primary LED chip has the electrode of the polarity identical with its polarity; And
Form at least two and be used for these electrodes are electrically connected to outside the external circuit and connect the electric conductor unit, each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with the corresponding electrode zone of the corresponding electrode of this primary LED chip and this pair light-emitting diode and one partly are electrically connected and the second electric conductor part of projection outside this corresponding perforation with this first electric conductor in the perforation of a correspondence.
According to a kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates the revers voltage protection component of lip-deep revers voltage protective device, and this revers voltage protection component has first electrode with this first polarity, and second electrode with this second polarity;
One be used to set up at least one one of them electrode of this primary LED chip and this revers voltage protection component one have and the electrode of the opposite polarity polarity of this one of them electrode of this primary LED chip between the electrode bonding conductor unit that is electrically connected; And at least two connection electric conductor unit, outside that are used for these electrodes are electrically connected to external circuit.
According to another kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates the revers voltage protection component of lip-deep revers voltage protective device, this revers voltage protection component has first and second electrode zones with the electrode alignment of this primary LED chip, this the first region territory has this first polarity and this second electrode region has this second polarity, and these electrode zones respectively are formed with one and expose one of this primary LED chip and have and its perforation of electrode of opposite polarity polarity; Reaching at least two is used for these electrodes are electrically connected to connection electric conductor unit outside the external circuit.
According to another kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One can be energized the light-emitting diode chip for backlight unit that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach one and be installed on identical lip-deep second electrode that has with this first opposite polarity second polarity with this first electrode;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates the revers voltage protection component of lip-deep revers voltage protective device, this revers voltage protection component is a capacitor, and this capacitor has near two electrodes with reciprocal polarity the electrode in two electrodes that respectively extend to this light-emitting diode chip for backlight unit;
An insulating barrier that is formed on this electrode of light emitting diode installation surface, this insulating barrier are to come by near the perforation of the electrode fixed this corresponding electrode that extends in light-emitting diode chip for backlight unit that can form two corresponding electrodes that are used to expose this light-emitting diode chip for backlight unit and this revers voltage protection component with pattern by exposure and development treatment;
An electrode bonding conductor unit, this electrode bonding conductor unit comprise two each conductors that the electrode of this electrode of light emitting diode that this perforation by this insulating barrier exposed and this revers voltage protection component is electrically connected;
A lip-deep cover layer that is formed at this insulating barrier, this cover layer are formed with the exposed hole of a part of the conductor of two correspondences that are used to expose this electrode bonding conductor unit; And
At least two outside electric conductor unit that connect, each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with this part of corresponding conductor and one partly are electrically connected and the second electric conductor part of projection outside this exposed hole with this first electric conductor in the exposed hole of a correspondence.
According to another kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One primary LED chip, this primary LED chip have a non-light that allows extraneous light to penetrate penetrate the surface, one with should non-light penetrate the relative light in surface penetrate surface, be arranged at this non-light penetrate the surface first electrode with one first polarity, and one be arranged at this non-light and penetrate and surperficial have one and second electrode of this first opposite polarity second polarity;
An electrode bonding conductor unit, this electrode bonding conductor unit comprise a non-light that is formed at this primary LED chip penetrate the surface this first electrode and near surf zone on the transparent conductive metal layer;
A secondary light-emitting diode chip for backlight unit that is arranged on this conductive metal layer, this pair light-emitting diode chip for backlight unit have a first surface that this first electrode is installed and one be equipped with this second electrode and with this first surface opposing second surface, this pair light-emitting diode chip for backlight unit is to penetrate the surface and be arranged on the conductive metal layer of this primary LED chip so that second electrode that should the pair light-emitting diode chip for backlight unit is to be electrically connected with first electrode of this primary LED chip via this conductive metal layer towards the non-light of this primary LED chip with its second surface;
A non-light that is formed at this primary LED chip penetrates lip-deep opaque cover layer so that should be capped by the pair light-emitting diode chip for backlight unit, this cover layer is formed with the perforate of first electrode of two second electrodes that are used to expose this primary LED chip and this pair light-emitting diode chip for backlight unit, and
Connect the electric conductor unit outside being formed in this tectal each perforate, each is outside to connect electric conductor unit and comprises one and can partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor with first electric conductor part that is electrically connected by this corresponding perforate institute exposed electrodes and one in the perforate of this tectal correspondence.
According to another kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate relative and the non-light that allow extraneous light to penetrate in surface and penetrate surface, one and be installed on this non-light and penetrate lip-deep first electrode with one first polarity, reach one and be installed on lip-deep second electrode that has with this first opposite polarity second polarity of this non-light ejaculation;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates lip-deep secondary light-emitting diode chip for backlight unit, and this pair light-emitting diode chip for backlight unit has first electrode that this first polarity arranged, and second electrode with this second polarity;
An electrode bonding conductor unit that is electrically connected that is used to set up between at least one electrode that has the polarity identical one of them electrode of this primary LED chip and this revers voltage protection component one with the polarity of this one of them electrode of this primary LED chip; Reaching at least two is used for these electrodes are electrically connected to connection electric conductor unit outside the external circuit.
According to another kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
A non-light that is arranged at this primary LED chip penetrates lip-deep secondary light-emitting diode chip for backlight unit, this pair light-emitting diode chip for backlight unit has first and second electrode zones with the electrode alignment of this primary LED chip, this the first region territory has this first polarity and this second electrode region has this second polarity, and these electrode zones respectively are formed with one and expose the perforation that one of this primary LED chip has the electrode of the polarity identical with its polarity; And
At least two are used for these electrodes are electrically connected to outside the external circuit and connect the electric conductor unit, and each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with the corresponding electrode zone of the corresponding electrode of this primary LED chip and this pair light-emitting diode and one partly are electrically connected and the second electric conductor part of projection outside this corresponding perforation with this first electric conductor in the perforation of a correspondence.
[embodiment]
Before present preferred embodiment of the present invention is described in detail, should be noted that of the present invention graphic in, identical label is to be used for indicating components identical.And in order to show feature of the present invention, the element in graphic is not to draw by actual ratio.
Fig. 1-8 is the schematic flow diagram of the method for packing of the LED encapsulation body of demonstration first preferred embodiment of the present invention.
See also shown in Fig. 1,2, one can be energized the primary LED chip 1 that emits beam is at first to be provided.This primary LED chip 1 has a non-light and penetrates surface 10, a light relative with should non-light penetrating surface 10 and penetrate surface 11 and be installed on first and second electrodes 12 and 13 in this non-light ejaculation surperficial 10.This first electrode 12 have one first polarity and this second electrode 13 have one with this first opposite polarity second polarity.Should be noted that on the surface of each electrode 12,13 it is that an auxiliary conductive layer (not shown) can be set on demand.This auxiliary conductive layer can comprise one or two metal level that is formed by the metal material that chooses in nickel, gold or any other metal material that is fit to.Then, an insulating barrier 2 that is formed by opaque light sensitivity photoresist is that the non-light that is formed at this primary LED chip 1 penetrates on the surface 10.
Subsequently, by exposure and development treatment, this insulating barrier 2 can be formed two exposed holes 20 that are used to expose corresponding electrode 12,13 by fixed with pattern.
Then, a protective layer 3 that is formed by opaque light sensitivity photoresist is to be formed on this insulating barrier 2, as shown in FIG. 3.
Then, by exposure and development treatment, this protective layer 3 can be formed two corresponding exposed hole 20 connection and bigger dimensionally perforations 30 with this insulating barrier 2 by fixed with pattern, as shown in FIG. 4.
After the formation of perforation 30; formation one conductor 4 in the perforation 30 that each exposed hole corresponding with one of this insulating barrier 2 20 of each exposed hole 20 of this insulating barrier 2 and this protective layer 3 is communicated with is so that these conductors 4 are corresponding electrodes 12,13 with this primary LED chip 1 is electrically connected.These conductors 4 are to be formed by any suitable material use picture printing as conducting resinl or metal material or any suitable method as the sputter.
Should be noted that on the surface of each conductor 4 it is to be provided with as mentioned above an auxiliary conductive layer (not shown) on demand.
Seeing also shown in Figure 5ly, then, is to be provided as a revers voltage protection component 5 of revers voltage protective device.In the present embodiment, this revers voltage protection component 5 is a secondary light-emitting diode chip for backlight unit.It is being that non-light than this primary LED chip 1 penetrates the little first surface in surface 10 50, one and these first surface 50 opposing second surface 51 and first and second electrodes 52 and 53 that are installed on this second surface 51 and have this first polarity and this second polarity respectively on the area that this revers voltage protection component 5 has one.Should be noted that also be to be provided with an aforesaid auxiliary conductive layer (not shown) on demand on the surface of the electrode 52,53 of this pair light-emitting diode chip for backlight unit 5.Then, an insulating barrier 6 that is formed by opaque light sensitivity photoresist is to be formed on the second surface 51 of this pair light-emitting diode chip for backlight unit 5.
Be noted that this first surface 50 can be light penetrate the surface and this second surface 51 can be non-light penetrate the surface, perhaps opposite.
Subsequently, by exposure and development treatment, this insulating barrier 6 can be formed two exposed holes 60 that are used to expose corresponding electrode 52,53 by fixed with pattern.
Then, a protective layer 7 that is formed by opaque light sensitivity photoresist is to be formed on this insulating barrier 6, as shown in FIG. 6.
Then, by exposure and development treatment, this protective layer 7 can be formed two corresponding exposed hole 60 connection and bigger dimensionally perforations 70 with this insulating barrier 6 by fixed with pattern, as shown in FIG. 7.
After the formation of perforation 70; formation one conductor 4 in the perforation 70 that each exposed hole corresponding with one of this insulating barrier 6 60 of each exposed hole 60 of this insulating barrier 6 and this protective layer 7 is communicated with is so that these conductors 4 are corresponding electrodes 52,53 with this pair light-emitting diode chip for backlight unit 5 is electrically connected.These conductors 4 are to be formed by any suitable material use picture printing as conducting resinl or metal material or any suitable method as the sputter.These conductors 4 that are electrically connected with these electrodes 12,13 of this primary LED chip 1 and are electrically connected with these electrodes 52,53 of this pair light-emitting diode chip for backlight unit 5 are jointly as an electrode bonding conductor unit.
Should be noted that on the surface of these conductors 4 that these electrodes 52,53 with this pair light-emitting diode chip for backlight unit 5 are electrically connected it also is to be provided with as mentioned above an auxiliary conductive layer (not shown) on demand.
Subsequently; as shown in FIG. 8, this revers voltage protection component 5 is to penetrate towards the non-light of this primary LED chip 1 on the surface of protective layer 3 that the surface is arranged at this light-emitting diode chip for backlight unit 1 for 10 times so that first electrode 12 of this primary LED chip 1 is a conductor 4 via correspondence at its second surface 51 to be electrically connected to second electrode 53 of this pair light-emitting diode chip for backlight unit 5 and second electrode 13 of this primary LED chip 1 is first electrode 52 that is electrically connected to this pair light-emitting diode chip for backlight unit 5 via the conductor 4 of correspondence then.
Then, cover layer 8 that is formed by opaque light sensitivity photoresist is to be formed on the surface of protective layer 3 of this primary LED chip 1 to cover this pair light-emitting diode chip for backlight unit 5.By exposure and development treatment, this cover layer 8 is the perforates 80 of a part that are formed with the conductor 4 of two correspondences in the perforation that is used to expose the protective layer 3 that is formed on this primary LED chip 1 30.
After the formation of perforate 80, two outside electric conductor unit 9 that connect are formed.Each is outside to connect that the first electric conductor part 90 that electric conductor unit 9 comprises a conductor 4 that can be exposed with the perforate 80 corresponding by this in the perforate 80 of a correspondence this part is electrically connected and one are electrically connected with this first electric conductor part 90 and the second electric conductor part 81 that projection can be electrically connected with the external circuit (not shown) outside this perforate 80.
Should be noted that these outside electric conductor unit 9 that connect can be formed by any suitable method of any suitable material use.In addition, look closely the method for use and decide, these outside first and second electric conductors parts that connect electric conductor unit 9 can be made by electric conducting material identical or inequality.
Be appreciated that; in the present embodiment; because these insulating barriers 2; 6, these protective layers 3; 7 and this cover layer 8 all be to form by opaque light sensitivity photoresist; when this pair light-emitting diode chip for backlight unit 5 is that appearance owing to revers voltage operates when protecting this primary LED chip 1, can not have influence on the light that this primary LED chip 1 is produced at the light that moment produced by this pair light-emitting diode chip for backlight unit 5.On the other hand; in the present embodiment, though this revers voltage protection component 5 is with light-emitting diode chip for backlight unit as an example, yet; should be appreciated that Zener diode (Zenor diode) is can be used to replace this pair light-emitting diode chip for backlight unit 5 as this revers voltage protective device.
When Zener diode is used as the revers voltage protective device, these insulating barriers 2,6, these protective layers 3,7, and this cover layer 8 be not restricted to opaque because Zener diode can not produce light when running.
Moreover by the size of perforate 80 of this cover layer 8 of control, these outside sizes that connect electric conductor unit 9 are to come Be Controlled according to needs, can make things convenient for and being connected of external device (ED).For example, the outside second electric conductor part 91 that connects electric conductor unit 9 is bigger than these electrode of light emitting diode, as shown in Figure 25.
Should be noted that; when first electrode 12 of the primary LED chip 1 of the LED encapsulation body of above first preferred embodiment is that first electrode 52 with this pair light-emitting diode chip for backlight unit 5 is electrically connected; second electrode 13 of this primary LED chip 5 is that second electrode 53 with this pair light-emitting diode chip for backlight unit 5 is electrically connected; these insulating barriers 2; 6 and these protective layers 3; the 7th, form by transparent light sensitivity photoresist; and the non-light of this primary LED chip 1 is when penetrating surface 10 and allowing extraneous lights to penetrate; this LED encapsulation body; look closely the color of these advocate peace secondary light-emitting diode chip for backlight unit 1 and 5 light that send and decide, can send the LED encapsulation body of the light that brightness is raised or be one and send the LED encapsulation body that has by the light of the resulting color of light of the light that mixes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5 for one.
That is to say, advocate peace secondary light-emitting diode chip for backlight unit 1 and 5 when sending the light-emitting diode chip for backlight unit of the identical light of color when this, the LED encapsulation body of the first above preferred embodiment can send the light that brightness is raised.When this secondary light-emitting diode chip for backlight unit 1 and 5 of advocating peace is when sending the light-emitting diode chip for backlight unit of color light inequality, the LED encapsulation body of the first above preferred embodiment can send the light with another kind of color, in this way, the LED encapsulation body of white light or other non-trichromatic colors can be obtained.
Fig. 9-12 is the schematic flow diagram of the method for packing of the LED encapsulation body of demonstration second preferred embodiment of the present invention.
At first, as shown in Figure 9, a primary LED chip 1 is at first to be provided.This primary LED chip 1 has a non-light and penetrates surface 10, a light relative with should non-light penetrating surface 10 and penetrate surface 11 and be installed on first and second electrodes 12 and 13 in this non-light ejaculation surperficial 10.This first electrode 12 have one first polarity and this second electrode 13 have one with this first opposite polarity second polarity.Identical with above embodiment, be that an auxiliary conductive layer (not shown) can be set on demand on the surface of each electrode 12,13.
Then, be to be provided as a revers voltage protection component 5 of revers voltage protective device, in the present embodiment, this revers voltage protection component 5 is a secondary light-emitting diode chip for backlight unit.It is being that non-light than this primary LED chip 1 penetrates the little first surface in surface 10 50, one and these first surface 50 opposing second surface 51 and first and second electrodes 52 and 53 that are installed on this second surface 51 and have this first polarity and this second polarity respectively on the area that this pair light-emitting diode chip for backlight unit 5 has one.Identical with above embodiment, on the surface of the electrode 52,53 of this pair light-emitting diode chip for backlight unit 5, also be to be provided with an aforesaid auxiliary conductive layer (not shown) on demand.
Penetrate towards the non-light of this primary LED chip 1 after non-light that the surface is set at this primary LED chip 1 for 10 times penetrates surface 10 at its first surface 50 in this pair light-emitting diode chip for backlight unit 5, an insulating barrier 2 is that the non-light that is formed at this primary LED chip 1 penetrates on the surface 10 and can cover this pair light-emitting diode chip for backlight unit 5.By exposure and development treatment, this insulating barrier 2 is to be formed with the exposed hole 20 that several are used to expose this primary LED chip 1 and the corresponding electrode 12,13,52,53 of this pair light-emitting diode chip for backlight unit 5, as shown in Figure 10.
Then, a protective layer 3 that is formed by opaque photoresist is to be formed on this insulating barrier 2.By exposure and development treatment; this protective layer 3 can be formed two two electrodes 12 that expose a correspondence of this primary LED chip 1 respectively that respectively are communicated with this insulating barrier 2 by fixed with pattern; 13 and of this pair light-emitting diode chip for backlight unit 5 have this corresponding electrode 12 with this primary LED chip 1; the electrode 53 of 13 opposite polarity polarity; 52 perforation 30, as shown in Figure 11.Two jointly are formed by any suitable method of any suitable material use as the conductor 4 of an electrode bonding conductor unit ' be embodiment as previously discussed is the same.Electrode 12 that exposes a correspondence of this primary LED chip at one of this insulating barrier 2 of each conductor 4 ' comprise; in 13 the exposed hole 20 can with this corresponding electrode 12 of this primary LED chip 1; 13 firsts that are electrically connected 40; the second portion 41 that is electrically connected in the perforation 30 of an exposed hole that in it, is formed with this first 40 20 that is communicated with this insulating barrier 2 at one of this protective layer 3 and with this first 40; and in exposed hole 20 that is communicated with this perforation 30 that in it, is formed with this second portion 41 at one of this insulating barrier 2 can with this electrode 53,52 of this pair light-emitting diode chip for backlight unit 5 and and third part 42 of being electrically connected of this second portion 41.
Should be noted that in each conductor 4 ' the surface of second portion 41 on also be to be provided with as mentioned above an auxiliary conductive layer (not shown) on demand.
Then, as shown in Figure 12, a cover layer 8 is to be formed on this protective layer 3.
By exposure and development treatment, this cover layer 8 be formed with two be used to expose corresponding conductor 4 ' the perforate 80 of a part of second portion 41.
After the formation of perforate 80, two outside connection electric conductor unit 9 are to be formed.Each is outside connect electric conductor unit 9 comprise a conductor 4 that in the perforate 80 of a correspondence of this cover layer 8, can be exposed with the perforate 80 corresponding by this ' the first electric conductor part 90 that is electrically connected of this part of second portion and one be electrically connected and the second electric conductor part 91 of projection outside this corresponding perforate 80 with this first electric conductor part 90.
Should be noted that identically with above embodiment, the Zener diode chip is can be used for replacing this pair light-emitting diode chip for backlight unit as the revers voltage protective device.On the other hand, identical with above embodiment, this LED encapsulation body can also send the LED encapsulation body that has by the light of the resulting color of light of the light that mixes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5 as a LED encapsulation body that sends the light that brightness is raised or as one.Because the condition of these variations is with above-described identical, repeats no more for this reason in this.
Figure 13-15 is the schematic flow diagram of the method for packing of the LED encapsulation body of demonstration the 3rd preferred embodiment of the present invention.
Seeing also a primary LED chip 1 shown in Figure 13, identical with disclosed primary LED chip in above preferred embodiment is at first to be provided.
Then, an insulating barrier 2 is that the non-light that is formed at this primary LED chip 1 penetrates on the surface 10.By exposure and development treatment, this insulating barrier 2 is the exposed holes 20 that are formed with the electrode 12,13 of two correspondences that are used to expose this primary LED chip 1.Each exposed hole 20 is bigger than the electrode of this primary LED chip 1 dimensionally.
Then, in each exposed hole 20, form a conductor 4 so that these conductors 4 are to be electrically connected with the corresponding electrode 12,13 of this primary LED chip 1.These conductors 4 are jointly as an electrode bonding conductor unit.Identical with above preferred embodiment, these conductors 4 are to be formed by any suitable material use picture printing as conducting resinl or metal material or any suitable method as the sputter.Also be to be provided with as mentioned above an auxiliary conductive layer (not shown) on demand on the surface of each conductor 4.
Subsequently, with at the identical revers voltage protecting component 5 of the revers voltage protecting component as reverse voltage protection device described in the second preferred embodiment be its second surface 51 penetrate towards the non-light of this primary LED chip 1 on the surface that the surface is arranged at this insulating barrier 2 for 10 times so that the first electrode 52 that should pair light-emitting diode chip for backlight unit (revers voltage protecting component) 5 be via a conductor 4 should pair light-emitting diode chip for backlight unit 5 with the second electrode 13 electrical connections of this primary LED chip 1 the second electrode 53 be via first electrode 12 electrical connections of another conductor 4 with this primary LED chip 1.
Now, see also shown in Figure 14ly, after the installation of this pair light-emitting diode chip for backlight unit 5, a cover layer 8 is to be formed on this insulating barrier 2 to cover this pair light-emitting diode chip for backlight unit 5.By exposure and development treatment, this cover layer 8 can be formed two perforates 80 that are used to expose the part of corresponding conductor 4 by fixed with pattern.
After the formation of perforate 80, as shown in Figure 15, two outside connection electric conductor unit 9 are to be formed.Each is outside to connect the first electric conductor part 90 that electric conductor unit 9 comprises a conductor 4 that can be exposed with the perforate 80 corresponding by this in the perforate 80 of a correspondence of this cover layer 8 this part is electrically connected and one and is electrically connected and the second electric conductor part 91 of projection outside this corresponding perforate 80 with this first electric conductor part 90.
Should be noted that identically with above embodiment, the Zener diode chip is can be used for replacing this pair light-emitting diode chip for backlight unit as the revers voltage protective device.On the other hand, identical with above embodiment, this LED encapsulation body can also send the LED encapsulation body that has by the light of the resulting color of light of the light that mixes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5 as a LED encapsulation body that sends the light that brightness is raised or as one.Since the condition of these variations be with above-described identical, repeat no more for this reason in this.
Figure 16-19 is the schematic flow diagram of the method for packing of the LED encapsulation body of demonstration the 4th preferred embodiment of the present invention.
As shown in Figure 16, identical with disclosed primary LED chip in an above embodiment primary LED chip 1 is at first to be provided.
Then, an insulating barrier 2 that is formed by opaque photoresist is that the non-light that is formed at this primary LED chip 1 penetrates on the surface 10.By exposure and development treatment, this insulating barrier 2 is formed with second exposed hole 22 that first exposed hole 21 of first electrode 12 that is used to expose this primary LED chip 1 and are used to expose second electrode 13 of this primary LED chip 1, this first exposed hole 21 is bigger than the electrode 12,13 of this primary LED chip 1 dimensionally.
Then, a conductor 4 is to be formed in this first exposed hole 21 so that this conductor 4 is first electrodes 12 with this primary LED chip 1 is electrically connected.Identical with above preferred embodiment, this conductor 4 is by any suitable material use picture printing as conducting resinl or metal material or any suitable method as the sputter is formed and be to be provided with as mentioned above an auxiliary conductive layer (not shown) on demand on the surface of this conductor 4.
Subsequently, the revers voltage protection component 5 as the revers voltage protective device is to be provided.This revers voltage protection component 5 be a secondary light-emitting diode chip for backlight unit and have a first surface 50 that one first electrode 52 is installed thereon and one be equipped with thereon one second electrode 53 and with these first surface 50 opposing second surface 51.This pair light-emitting diode chip for backlight unit 5 is to penetrate that the surface is arranged at for 10 times on this insulating barrier 2 so that second electrode 53 that should pair light-emitting diode chip for backlight unit 5 is to be electrically connected via first electrode 12 of this conductor 4 with this primary LED chip 1 at its second surface 51 towards the non-light of this primary LED chip 1.
Then, first protective layer 3 that forms by opaque photoresist ' be to be formed on this insulating barrier 2.Three of this first protective layers 3 ' be formed with are respectively applied for the perforation 31 of the part of second electrode 13 of first electrode 52 that exposes this pair light-emitting diode chip for backlight unit 5, this primary LED chip 1 and this conductor 4, as shown in Figure 17.
Subsequently, see also shown in Figure 180, second protective layer 7 that forms by opaque photoresist ' be formed at this first protective layer 3 ' on.
By exposure and development treatment; one of this second protective layer 7 ' be formed with and this first protective layer 3 ' this a part of perforation 31 of this conductor 4 of exposure be communicated with first perforation 71 of this part that can expose this conductor 4 and one make this first protective layer 3 ' second perforation 72 that is communicated with of other perforations 31, as shown in Figure 19.
Then, this first protective layer 3 ' perforation 31 and this second protective layer 7 ' first perforation 71 in formation one conductor 4 " so that this conductor 4 " be that this part with this conductor 4 is electrically connected.On the other hand, this first protective layer 3 ' these other perforations 31 and this second protective layer 7 ' second perforation 72 in form a conductor 4 ' so that second electrode 13 of this primary LED chip 1 is via this conductor 4 ' come and first electrode 52 of this pair light-emitting diode chip for backlight unit 5 is electrically connected.These conductors 4,4 ', 4 " jointly as an electrode bonding conductor unit.
Then, a cover layer 8 that forms by opaque photoresist be formed at this second protective layer 7 ' on.Two of this cover layers 8 ' be formed be used to expose the conductor 4 of the correspondence of this electrode bonding conductor unit ', 4 " the perforate 80 of a part.
Subsequently, two outside connection electric conductor unit 9 are to be formed.Each is outside connect electric conductor unit 9 comprise one in the perforate 80 of a correspondence of this cover layer 8 can with by the conductor 4 of 80 exposed electrodes bonding conductors of this corresponding perforate unit ', 4 " the first electric conductor part 90 that is electrically connected of this part and one be electrically connected and the second electric conductor part 91 of projection outside this corresponding perforate 80 with this first electric conductor part 90.
Should be noted that identically with above embodiment, the Zener diode chip is can be used for replacing this pair light-emitting diode chip for backlight unit as the revers voltage protective device.On the other hand, identical with above embodiment, this LED encapsulation body can also send the LED encapsulation body that has by the light of the resulting color of light of the light that mixes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5 as a LED encapsulation body that sends the light that brightness is raised or as one.Since the condition of these variations be with above-described identical, repeat no more for this reason in this.
Figure 20-21 shows that the LED encapsulation body of the light that brightness is raised is sent in one of the conduct of the 5th preferred embodiment of the present invention or sends as one to have by the advocate peace schematic flow diagram of method for packing of LED encapsulation body of light of the resulting color of light of secondary light-emitting diode chip for backlight unit of mixing.
As shown in Figure 20, one is at first to be provided with disclosed primary LED chip is identical in above embodiment primary LED chip 1.
Then, conductive metal layer 43 as an electrode bonding conductor unit be the non-light that is formed at this primary LED chip penetrate surface 10 this first electrode 12 and near surf zone on.Be noted that this conductive metal layer 43 is transparent conductive metal layer, as ITO.
Then, a secondary light-emitting diode chip for backlight unit 5, its have a first surface 50 that one first electrode 52 is installed thereon and one be equipped with thereon one second electrode 53 and with these first surface 50 opposing second surface 51, be to penetrate that the surface is arranged at for 10 times on this conductive metal layer 43 so that second electrode 53 that should pair light-emitting diode chip for backlight unit 5 is to be electrically connected via the conductive metal layer 43 of this electrode bonding conductor unit first electrode 12 with this primary LED chip 1 towards the non-light of this primary LED chip 1 at its second surface 51.
Then, a cover layer 8 that is formed by opaque photoresist is that the non-light that is formed at this primary LED chip 1 penetrates on the surface 10 so that should be capped by pair light-emitting diode chip for backlight unit 5, as shown in Figure 21.By exposure with show to handle, this cover layer 8 is formed with two perforates 80 that are respectively applied for first electrode 52 of second electrode 13 that exposes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5.
Subsequently, two outside electric conductor unit 9 that connect are formed.Each is outside to connect electric conductor unit 9 and comprises first an electric conductor part 90 that can be electrically connected with perforate 80 exposed electrodes 13,52 corresponding by this and one be electrically connected and the second electric conductor part of projection outside this corresponding perforate 80 with this first electric conductor part 90 in the perforate 80 of a correspondence of this cover layer 8.
The schematic flow diagram of the method for packing of the LED encapsulation body of Figure 22-25 demonstration the 6th preferred embodiment of the present invention.
See also shown in Figure 22,23, wherein, Figure 23 is the flat sheet of the bottom view of Figure 22.At first, one be at first to be provided at the identical primary LED chip 1 of the primary LED chip described in the above preferred embodiment.
Then, as a revers voltage protection component 5 of revers voltage protective device ' be that the non-light that is set at this primary LED chip 1 penetrates on the surface 10.In the present embodiment, this revers voltage protection component 5 ' be secondary light-emitting diode chip for backlight unit and have respectively first and second electrode zones of aiming at the electrode 12,13 of this primary LED chip 1 54,55.This first region territory 54 has this first polarity and this second electrode region 55 has this second polarity.These electrode zones 54,55 respectively are formed with the perforation 56 of the electrode 13,12 of a correspondence that exposes this primary LED chip 1.
Then, as shown in Figure 24,25, two outside electric conductor unit 9 that connect are formed.Each is outside to connect that electric conductor unit 9 comprises that first an electric conductor part 90 that can be electrically connected with perforation 56 exposed electrodes 12,13 corresponding by this and one are electrically connected with this first electric conductor part 90 in the perforation 56 of a correspondence and the second electric conductor part 91 that projection can be electrically connected with the external circuit (not shown) outside this perforation 56.Since these outside first electric conductor parts 90 that connect electric conductor unit 9 be this reverse protection component 5 ' perforation 56 in, so this revers voltage protection component 5 ' the first region territory 54 be second electrode 13 with this primary LED chip 1 be electrically connected and this revers voltage protection component 5 ' the second electrode region 55 be that first electrode 12 with this primary LED chip 1 is electrically connected.
Should be noted that identically with above embodiment, the Zener diode chip is can be used for replacing this pair light-emitting diode chip for backlight unit as the revers voltage protective device.On the other hand, identical with above embodiment, this LED encapsulation body can also as a LED encapsulation body that sends the light that brightness is raised or as one send have by the light that mixes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5 ' the LED encapsulation body of light of the resulting color of light.Because the condition of these variations is identical with described in first to fourth embodiment, repeats no more for this reason in this.
Figure 26-30 is the schematic flow diagram of method for packing of the LED encapsulation body of the 7th preferred embodiment of the present invention.
See also shown in Figure 26ly, at first, a primary LED chip 1 identical with primary LED chip in above-described preferred embodiment is at first to be provided.
Then, the revers voltage protection component 5 as the revers voltage protective device " is that the non-light that is arranged at this primary LED chip 1 penetrates on the surface 10.In the present embodiment, this revers voltage protection component 5 " is that a capacitor and its first electrode 57 with this first polarity are to extend near second electrode 13 of this light-emitting diode chip for backlight unit 1 and its second electrode 58 with this second polarity is to extend near first electrode 12 of this primary LED chip 1.
Then, as shown in Figure 27,28, an insulating barrier 2 is that the non-light that is formed at this light-emitting diode chip for backlight unit 1 penetrates on the surface 10 and can cover this revers voltage protection component 5 ".By exposure and development treatment, this insulating barrier 2 can be formed with two electrode 12,13 and this revers voltage protection components 5 that respectively are used to expose a correspondence of this primary LED chip 1 by fixed with pattern " near the electrode 58,57 this corresponding electrode 12,13.
Then, as shown in Figure 29, an electrode bonding conductor unit is formed.This electrode bonding conductor unit comprises the conductors 4 in the exposed hole 20 of two correspondences that respectively are formed at this insulating barrier 2 so that each conductor 4 is the electrodes 12 with this primary LED chip 1 that is exposed by this corresponding exposed hole 20; 13 and this revers voltage protection component 5 " electrode 58,57 be electrically connected.
After the formation of electrode bonding conductor unit, a cover layer 8 is to be formed on this insulating barrier 2.
See also shown in Figure 30ly, by exposure and development treatment, this cover layer 8 can be formed two perforates 80 that are used to expose the part of corresponding conductor 4 by fixed with pattern.
After the formation of perforate 80, two outside electric conductor unit 9 that connect are formed.Each is outside to connect that the first electric conductor part 90 that electric conductor unit 9 comprises a conductor 4 that can be exposed with the perforate 80 corresponding by this in the perforate 80 of a correspondence this part is electrically connected and one are electrically connected with this first electric conductor part 90 and the second electric conductor part 91 that projection can be electrically connected with the external circuit (not shown) outside this perforate 80.
Should be appreciated that, can also be applied to the of the present invention first to fourth and the 6th preferred embodiment as the revers voltage protective device with capacitor.
Above-mentioned take off graphic and explanation only be embodiments of the invention, and be non-for limiting protection scope of the present invention, allly changes or modifications according to other equivalences that the present invention did, and all should be encompassed in the protection range of this case.
[the main element conventional letter table of accompanying drawing]
1 primary LED chip, 10 non-light penetrate the surface
11 light penetrate surface 12 first electrodes
13 second electrodes, 2 insulating barriers
20 exposed holes, 3 protective layers
30 perforations, 4 conductors
5 revers voltage protection components, 50 first surfaces
51 second surfaces, 52 first electrodes
53 second electrodes, 6 insulating barriers
60 exposed holes, 7 protective layers
70 perforations, 8 cover layers
80 perforates, the 9 outside electric conductor unit that connect
90 first electric conductor parts, 91 second electric conductor parts
4 ' conductor, 40 firsts
41 second portions, 42 third parts
2 ' insulating barrier, 21 first exposed holes
22 second exposed holes, 3 ' the first protective layers
31 perforations, 7 ' the second protective layers
71 first perforations, 72 second perforations
4 " conductor 43 conductive metal layers
5 ' revers voltage protection component, 54 the first region territories
55 the second electrode regions, 56 perforations
5 " revers voltage protection component 57 first electrodes
58 second electrodes