CN1866554A - LED chip package and packaging method thereof - Google Patents

LED chip package and packaging method thereof Download PDF

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Publication number
CN1866554A
CN1866554A CNA2005100739546A CN200510073954A CN1866554A CN 1866554 A CN1866554 A CN 1866554A CN A2005100739546 A CNA2005100739546 A CN A2005100739546A CN 200510073954 A CN200510073954 A CN 200510073954A CN 1866554 A CN1866554 A CN 1866554A
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China
Prior art keywords
electrode
light
conductor
led chip
primary led
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Granted
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CNA2005100739546A
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Chinese (zh)
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CN100426539C (en
Inventor
沈育浓
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Suzhou Industrial Park Anthony Photoelectric Technology Co Ltd
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Individual
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19Manufacturing methods of high density interconnect preforms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24145Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73267Layer and HDI connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19102Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19104Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip

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Abstract

The invention discloses a luminous diode packer and packing method, which comprises the following steps: providing main luminous diode chip with light emitting surface and non-light emitting surface corresponding to light emitting surface and first and second electrode on the non-light emitting surface; setting counter-current voltage protective element with first and second electrode as counter-current voltage protective device on the non-light emitting surface of luminous diode chip; forming at least one electrode connecting conductor unit between one electrode of main luminous diode chips and counter-current voltage protective device; forming at least two outside connecting conductor units for electrode electrically.

Description

LED encapsulation body and method for packing thereof
[technical field]
The invention relates to a kind of LED encapsulation body and method for packing thereof.
[background technology]
At present, specialize in the device of the existing anti-ESD of known LED encapsulation body of outdoor use.Yet the volume of these known LED encapsulation bodies can be big so that do not meet the beneficial more compact trend of electronic product.
[summary of the invention]
In view of this, LED encapsulation body with revers voltage protective device and the method for packing thereof of purpose of the present invention for providing a kind of size effectively to be reduced.
Another object of the present invention is for providing a kind of LED encapsulation body and method for packing thereof with multi-chip structure.
According to the method for packing of a kind of LED encapsulation body of the present invention, comprise following step:
Provide one can be energized the primary LED chip that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and one of be installed in this two surface lip-deep first electrode with one first polarity, reach one and one of be installed in this two surface lip-deep second electrode that has with this first opposite polarity second polarity;
Non-light in this light-emitting diode chip for backlight unit penetrates the revers voltage protection component that a revers voltage protective device is set on the surface, and this revers voltage protection component has first electrode with this first polarity, and second electrode with this second polarity;
Form one be used to set up at least one one of them electrode of this primary LED chip and this revers voltage protection component one have and the electrode of the opposite polarity polarity of this one of them electrode of this primary LED chip between the electrode bonding conductor unit that is electrically connected; And
Forming at least two is used for this electrode that is electrically connected each other is electrically connected to connection electric conductor unit outside the external circuit.
Method for packing according to another kind of LED encapsulation body of the present invention, comprise following step: provide one can be energized the light-emitting diode chip for backlight unit that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with first polarity in this two surface, reach one and be installed on identical lip-deep second electrode that has with this first opposite polarity second polarity with this first electrode;
Non-light in this light-emitting diode chip for backlight unit penetrates the revers voltage protection component that a revers voltage protective device is set on the surface, this revers voltage protection component is a capacitor, and this capacitor has near two electrodes with reciprocal polarity the electrode in two electrodes that respectively extend to this light-emitting diode chip for backlight unit;
Form an insulating barrier on this electrode of light emitting diode installation surface, this insulating barrier is the perforation that is set near the electrode this corresponding electrode that extends in light-emitting diode chip for backlight unit that forms two corresponding electrodes that are used to expose this light-emitting diode chip for backlight unit and this revers voltage protection component with pattern by exposure and development treatment;
Form an electrode bonding conductor unit, this electrode bonding conductor unit comprises two each conductors that the electrode of this electrode of light emitting diode that this perforation by this insulating barrier exposed and this revers voltage protection component is electrically connected;
Form a cover layer on the surface of this insulating barrier, this cover layer is formed with the exposed hole of a part of the conductor of two correspondences that are used to expose this electrode bonding conductor unit; And
Form at least two outside electric conductor unit that connect, each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with this part of corresponding conductor and one partly are electrically connected and the second electric conductor part of projection outside this exposed hole with this first electric conductor in the exposed hole of a correspondence.
Method for packing according to another LED encapsulation body of the present invention, comprise following step: a primary LED chip is provided, this primary LED chip have a non-light that allows extraneous light to penetrate penetrate the surface, one with should non-light penetrate the relative light in surface penetrate surface, be arranged at this non-light penetrate the surface first electrode with one first polarity, and one be arranged at this non-light and penetrate and surperficial have one and second electrode of this first opposite polarity second polarity;
Form an electrode bonding conductor unit, this electrode bonding conductor unit comprise a non-light that is formed at this primary LED chip penetrate the surface this first electrode and near surf zone on the transparent conductive metal layer;
One secondary light-emitting diode chip for backlight unit is set on this conductive metal layer, this pair light-emitting diode chip for backlight unit have a first surface that this first electrode is installed and one be equipped with this second electrode and with this first surface opposing second surface, this pair light-emitting diode chip for backlight unit is to penetrate the surface and be arranged on the conductive metal layer of this primary LED chip towards the non-light of this primary LED chip with its second surface, so that second electrode that should the pair light-emitting diode chip for backlight unit is to be electrically connected with first electrode of this primary LED chip via this conductive metal layer;
Non-light in this primary LED chip penetrates the surperficial formation one opaque cover layer of going up covering by the pair light-emitting diode chip for backlight unit, this cover layer is formed with the perforate of first electrode of two second electrodes that are used to expose this primary LED chip and this pair light-emitting diode chip for backlight unit, and
In this tectal each perforate, form an outside electric conductor unit that connects, each is outside connect electric conductor unit comprise one in the perforate of this tectal correspondence with first electric conductor that is electrically connected by this corresponding perforate institute exposed electrodes partly and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor.
Method for packing according to another LED encapsulation body of the present invention, comprise following step: provide one can be energized the primary LED chip that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate relative and the non-light that allow extraneous light to penetrate in surface and penetrate surface, one and be installed on this non-light and penetrate lip-deep first electrode with one first polarity, reach one and be installed on lip-deep second electrode that has with this first opposite polarity second polarity of this non-light ejaculation;
Penetrate on the surface in the non-light of this light-emitting diode chip for backlight unit a secondary light-emitting diode chip for backlight unit is set, this pair light-emitting diode chip for backlight unit has first electrode that this first polarity arranged, and second electrode with this second polarity;
Form an electrode bonding conductor unit that is electrically connected that is used to set up between at least one electrode that has the polarity identical one of them electrode of this primary LED chip and this revers voltage protection component one with the polarity of this one of them electrode of this primary LED chip; And
Form at least two connection electric conductor unit, outside that are used for this first, second electrode is electrically connected to external circuit.
Method for packing according to another kind of LED encapsulation body of the present invention is characterized in that: comprise following step:
Provide one can be energized the primary LED chip that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
On the non-light ejaculation surface of this light-emitting diode chip for backlight unit, a secondary light-emitting diode chip for backlight unit is set, this pair light-emitting diode chip for backlight unit has first and second electrode zones with the electrode alignment of this primary LED chip, this the first region territory has this first polarity and this second electrode region has this second polarity, and this first and second electrode zone respectively is formed with one and exposes the perforation that one of this primary LED chip has the electrode of the polarity identical with its polarity; And
Form at least two and be used for these electrodes are electrically connected to outside the external circuit and connect the electric conductor unit, each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with the corresponding electrode zone of the corresponding electrode of this primary LED chip and this pair light-emitting diode and one partly are electrically connected and the second electric conductor part of projection outside this corresponding perforation with this first electric conductor in the perforation of a correspondence.
According to a kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates the revers voltage protection component of lip-deep revers voltage protective device, and this revers voltage protection component has first electrode with this first polarity, and second electrode with this second polarity;
One be used to set up at least one one of them electrode of this primary LED chip and this revers voltage protection component one have and the electrode of the opposite polarity polarity of this one of them electrode of this primary LED chip between the electrode bonding conductor unit that is electrically connected; And at least two connection electric conductor unit, outside that are used for these electrodes are electrically connected to external circuit.
According to another kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates the revers voltage protection component of lip-deep revers voltage protective device, this revers voltage protection component has first and second electrode zones with the electrode alignment of this primary LED chip, this the first region territory has this first polarity and this second electrode region has this second polarity, and these electrode zones respectively are formed with one and expose one of this primary LED chip and have and its perforation of electrode of opposite polarity polarity; Reaching at least two is used for these electrodes are electrically connected to connection electric conductor unit outside the external circuit.
According to another kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One can be energized the light-emitting diode chip for backlight unit that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach one and be installed on identical lip-deep second electrode that has with this first opposite polarity second polarity with this first electrode;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates the revers voltage protection component of lip-deep revers voltage protective device, this revers voltage protection component is a capacitor, and this capacitor has near two electrodes with reciprocal polarity the electrode in two electrodes that respectively extend to this light-emitting diode chip for backlight unit;
An insulating barrier that is formed on this electrode of light emitting diode installation surface, this insulating barrier are to come by near the perforation of the electrode fixed this corresponding electrode that extends in light-emitting diode chip for backlight unit that can form two corresponding electrodes that are used to expose this light-emitting diode chip for backlight unit and this revers voltage protection component with pattern by exposure and development treatment;
An electrode bonding conductor unit, this electrode bonding conductor unit comprise two each conductors that the electrode of this electrode of light emitting diode that this perforation by this insulating barrier exposed and this revers voltage protection component is electrically connected;
A lip-deep cover layer that is formed at this insulating barrier, this cover layer are formed with the exposed hole of a part of the conductor of two correspondences that are used to expose this electrode bonding conductor unit; And
At least two outside electric conductor unit that connect, each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with this part of corresponding conductor and one partly are electrically connected and the second electric conductor part of projection outside this exposed hole with this first electric conductor in the exposed hole of a correspondence.
According to another kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One primary LED chip, this primary LED chip have a non-light that allows extraneous light to penetrate penetrate the surface, one with should non-light penetrate the relative light in surface penetrate surface, be arranged at this non-light penetrate the surface first electrode with one first polarity, and one be arranged at this non-light and penetrate and surperficial have one and second electrode of this first opposite polarity second polarity;
An electrode bonding conductor unit, this electrode bonding conductor unit comprise a non-light that is formed at this primary LED chip penetrate the surface this first electrode and near surf zone on the transparent conductive metal layer;
A secondary light-emitting diode chip for backlight unit that is arranged on this conductive metal layer, this pair light-emitting diode chip for backlight unit have a first surface that this first electrode is installed and one be equipped with this second electrode and with this first surface opposing second surface, this pair light-emitting diode chip for backlight unit is to penetrate the surface and be arranged on the conductive metal layer of this primary LED chip so that second electrode that should the pair light-emitting diode chip for backlight unit is to be electrically connected with first electrode of this primary LED chip via this conductive metal layer towards the non-light of this primary LED chip with its second surface;
A non-light that is formed at this primary LED chip penetrates lip-deep opaque cover layer so that should be capped by the pair light-emitting diode chip for backlight unit, this cover layer is formed with the perforate of first electrode of two second electrodes that are used to expose this primary LED chip and this pair light-emitting diode chip for backlight unit, and
Connect the electric conductor unit outside being formed in this tectal each perforate, each is outside to connect electric conductor unit and comprises one and can partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor with first electric conductor part that is electrically connected by this corresponding perforate institute exposed electrodes and one in the perforate of this tectal correspondence.
According to another kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate relative and the non-light that allow extraneous light to penetrate in surface and penetrate surface, one and be installed on this non-light and penetrate lip-deep first electrode with one first polarity, reach one and be installed on lip-deep second electrode that has with this first opposite polarity second polarity of this non-light ejaculation;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates lip-deep secondary light-emitting diode chip for backlight unit, and this pair light-emitting diode chip for backlight unit has first electrode that this first polarity arranged, and second electrode with this second polarity;
An electrode bonding conductor unit that is electrically connected that is used to set up between at least one electrode that has the polarity identical one of them electrode of this primary LED chip and this revers voltage protection component one with the polarity of this one of them electrode of this primary LED chip; Reaching at least two is used for these electrodes are electrically connected to connection electric conductor unit outside the external circuit.
According to another kind of LED encapsulation body of the present invention, it is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
A non-light that is arranged at this primary LED chip penetrates lip-deep secondary light-emitting diode chip for backlight unit, this pair light-emitting diode chip for backlight unit has first and second electrode zones with the electrode alignment of this primary LED chip, this the first region territory has this first polarity and this second electrode region has this second polarity, and these electrode zones respectively are formed with one and expose the perforation that one of this primary LED chip has the electrode of the polarity identical with its polarity; And
At least two are used for these electrodes are electrically connected to outside the external circuit and connect the electric conductor unit, and each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with the corresponding electrode zone of the corresponding electrode of this primary LED chip and this pair light-emitting diode and one partly are electrically connected and the second electric conductor part of projection outside this corresponding perforation with this first electric conductor in the perforation of a correspondence.
[description of drawings]
Fig. 1 to 8 is the exemplary flow cutaway view of the method for packing of the LED encapsulation body of demonstration first preferred embodiment of the present invention;
Fig. 9 to 12 is the exemplary flow cutaway view of the method for packing of the LED encapsulation body of demonstration second preferred embodiment of the present invention;
Figure 13 to 15 is the exemplary flow cutaway view of the method for packing of the LED encapsulation body of demonstration the 3rd preferred embodiment of the present invention;
Figure 16 to 19 is the exemplary flow cutaway view of the method for packing of the LED encapsulation body of demonstration the 4th preferred embodiment of the present invention;
Figure 20 and 21 exemplary flow cutaway views for the method for packing of the LED encapsulation body that shows the 5th preferred embodiment of the present invention;
Figure 22 to 25 is the schematic flow diagram of the method for packing of the LED encapsulation body of demonstration the 6th preferred embodiment of the present invention; And
Figure 26 to 30 is the exemplary flow cutaway view of the method for packing of the LED encapsulation body of demonstration the 7th preferred embodiment of the present invention.
[embodiment]
Before present preferred embodiment of the present invention is described in detail, should be noted that of the present invention graphic in, identical label is to be used for indicating components identical.And in order to show feature of the present invention, the element in graphic is not to draw by actual ratio.
Fig. 1-8 is the schematic flow diagram of the method for packing of the LED encapsulation body of demonstration first preferred embodiment of the present invention.
See also shown in Fig. 1,2, one can be energized the primary LED chip 1 that emits beam is at first to be provided.This primary LED chip 1 has a non-light and penetrates surface 10, a light relative with should non-light penetrating surface 10 and penetrate surface 11 and be installed on first and second electrodes 12 and 13 in this non-light ejaculation surperficial 10.This first electrode 12 have one first polarity and this second electrode 13 have one with this first opposite polarity second polarity.Should be noted that on the surface of each electrode 12,13 it is that an auxiliary conductive layer (not shown) can be set on demand.This auxiliary conductive layer can comprise one or two metal level that is formed by the metal material that chooses in nickel, gold or any other metal material that is fit to.Then, an insulating barrier 2 that is formed by opaque light sensitivity photoresist is that the non-light that is formed at this primary LED chip 1 penetrates on the surface 10.
Subsequently, by exposure and development treatment, this insulating barrier 2 can be formed two exposed holes 20 that are used to expose corresponding electrode 12,13 by fixed with pattern.
Then, a protective layer 3 that is formed by opaque light sensitivity photoresist is to be formed on this insulating barrier 2, as shown in FIG. 3.
Then, by exposure and development treatment, this protective layer 3 can be formed two corresponding exposed hole 20 connection and bigger dimensionally perforations 30 with this insulating barrier 2 by fixed with pattern, as shown in FIG. 4.
After the formation of perforation 30; formation one conductor 4 in the perforation 30 that each exposed hole corresponding with one of this insulating barrier 2 20 of each exposed hole 20 of this insulating barrier 2 and this protective layer 3 is communicated with is so that these conductors 4 are corresponding electrodes 12,13 with this primary LED chip 1 is electrically connected.These conductors 4 are to be formed by any suitable material use picture printing as conducting resinl or metal material or any suitable method as the sputter.
Should be noted that on the surface of each conductor 4 it is to be provided with as mentioned above an auxiliary conductive layer (not shown) on demand.
Seeing also shown in Figure 5ly, then, is to be provided as a revers voltage protection component 5 of revers voltage protective device.In the present embodiment, this revers voltage protection component 5 is a secondary light-emitting diode chip for backlight unit.It is being that non-light than this primary LED chip 1 penetrates the little first surface in surface 10 50, one and these first surface 50 opposing second surface 51 and first and second electrodes 52 and 53 that are installed on this second surface 51 and have this first polarity and this second polarity respectively on the area that this revers voltage protection component 5 has one.Should be noted that also be to be provided with an aforesaid auxiliary conductive layer (not shown) on demand on the surface of the electrode 52,53 of this pair light-emitting diode chip for backlight unit 5.Then, an insulating barrier 6 that is formed by opaque light sensitivity photoresist is to be formed on the second surface 51 of this pair light-emitting diode chip for backlight unit 5.
Be noted that this first surface 50 can be light penetrate the surface and this second surface 51 can be non-light penetrate the surface, perhaps opposite.
Subsequently, by exposure and development treatment, this insulating barrier 6 can be formed two exposed holes 60 that are used to expose corresponding electrode 52,53 by fixed with pattern.
Then, a protective layer 7 that is formed by opaque light sensitivity photoresist is to be formed on this insulating barrier 6, as shown in FIG. 6.
Then, by exposure and development treatment, this protective layer 7 can be formed two corresponding exposed hole 60 connection and bigger dimensionally perforations 70 with this insulating barrier 6 by fixed with pattern, as shown in FIG. 7.
After the formation of perforation 70; formation one conductor 4 in the perforation 70 that each exposed hole corresponding with one of this insulating barrier 6 60 of each exposed hole 60 of this insulating barrier 6 and this protective layer 7 is communicated with is so that these conductors 4 are corresponding electrodes 52,53 with this pair light-emitting diode chip for backlight unit 5 is electrically connected.These conductors 4 are to be formed by any suitable material use picture printing as conducting resinl or metal material or any suitable method as the sputter.These conductors 4 that are electrically connected with these electrodes 12,13 of this primary LED chip 1 and are electrically connected with these electrodes 52,53 of this pair light-emitting diode chip for backlight unit 5 are jointly as an electrode bonding conductor unit.
Should be noted that on the surface of these conductors 4 that these electrodes 52,53 with this pair light-emitting diode chip for backlight unit 5 are electrically connected it also is to be provided with as mentioned above an auxiliary conductive layer (not shown) on demand.
Subsequently; as shown in FIG. 8, this revers voltage protection component 5 is to penetrate towards the non-light of this primary LED chip 1 on the surface of protective layer 3 that the surface is arranged at this light-emitting diode chip for backlight unit 1 for 10 times so that first electrode 12 of this primary LED chip 1 is a conductor 4 via correspondence at its second surface 51 to be electrically connected to second electrode 53 of this pair light-emitting diode chip for backlight unit 5 and second electrode 13 of this primary LED chip 1 is first electrode 52 that is electrically connected to this pair light-emitting diode chip for backlight unit 5 via the conductor 4 of correspondence then.
Then, cover layer 8 that is formed by opaque light sensitivity photoresist is to be formed on the surface of protective layer 3 of this primary LED chip 1 to cover this pair light-emitting diode chip for backlight unit 5.By exposure and development treatment, this cover layer 8 is the perforates 80 of a part that are formed with the conductor 4 of two correspondences in the perforation that is used to expose the protective layer 3 that is formed on this primary LED chip 1 30.
After the formation of perforate 80, two outside electric conductor unit 9 that connect are formed.Each is outside to connect that the first electric conductor part 90 that electric conductor unit 9 comprises a conductor 4 that can be exposed with the perforate 80 corresponding by this in the perforate 80 of a correspondence this part is electrically connected and one are electrically connected with this first electric conductor part 90 and the second electric conductor part 81 that projection can be electrically connected with the external circuit (not shown) outside this perforate 80.
Should be noted that these outside electric conductor unit 9 that connect can be formed by any suitable method of any suitable material use.In addition, look closely the method for use and decide, these outside first and second electric conductors parts that connect electric conductor unit 9 can be made by electric conducting material identical or inequality.
Be appreciated that; in the present embodiment; because these insulating barriers 2; 6, these protective layers 3; 7 and this cover layer 8 all be to form by opaque light sensitivity photoresist; when this pair light-emitting diode chip for backlight unit 5 is that appearance owing to revers voltage operates when protecting this primary LED chip 1, can not have influence on the light that this primary LED chip 1 is produced at the light that moment produced by this pair light-emitting diode chip for backlight unit 5.On the other hand; in the present embodiment, though this revers voltage protection component 5 is with light-emitting diode chip for backlight unit as an example, yet; should be appreciated that Zener diode (Zenor diode) is can be used to replace this pair light-emitting diode chip for backlight unit 5 as this revers voltage protective device.
When Zener diode is used as the revers voltage protective device, these insulating barriers 2,6, these protective layers 3,7, and this cover layer 8 be not restricted to opaque because Zener diode can not produce light when running.
Moreover by the size of perforate 80 of this cover layer 8 of control, these outside sizes that connect electric conductor unit 9 are to come Be Controlled according to needs, can make things convenient for and being connected of external device (ED).For example, the outside second electric conductor part 91 that connects electric conductor unit 9 is bigger than these electrode of light emitting diode, as shown in Figure 25.
Should be noted that; when first electrode 12 of the primary LED chip 1 of the LED encapsulation body of above first preferred embodiment is that first electrode 52 with this pair light-emitting diode chip for backlight unit 5 is electrically connected; second electrode 13 of this primary LED chip 5 is that second electrode 53 with this pair light-emitting diode chip for backlight unit 5 is electrically connected; these insulating barriers 2; 6 and these protective layers 3; the 7th, form by transparent light sensitivity photoresist; and the non-light of this primary LED chip 1 is when penetrating surface 10 and allowing extraneous lights to penetrate; this LED encapsulation body; look closely the color of these advocate peace secondary light-emitting diode chip for backlight unit 1 and 5 light that send and decide, can send the LED encapsulation body of the light that brightness is raised or be one and send the LED encapsulation body that has by the light of the resulting color of light of the light that mixes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5 for one.
That is to say, advocate peace secondary light-emitting diode chip for backlight unit 1 and 5 when sending the light-emitting diode chip for backlight unit of the identical light of color when this, the LED encapsulation body of the first above preferred embodiment can send the light that brightness is raised.When this secondary light-emitting diode chip for backlight unit 1 and 5 of advocating peace is when sending the light-emitting diode chip for backlight unit of color light inequality, the LED encapsulation body of the first above preferred embodiment can send the light with another kind of color, in this way, the LED encapsulation body of white light or other non-trichromatic colors can be obtained.
Fig. 9-12 is the schematic flow diagram of the method for packing of the LED encapsulation body of demonstration second preferred embodiment of the present invention.
At first, as shown in Figure 9, a primary LED chip 1 is at first to be provided.This primary LED chip 1 has a non-light and penetrates surface 10, a light relative with should non-light penetrating surface 10 and penetrate surface 11 and be installed on first and second electrodes 12 and 13 in this non-light ejaculation surperficial 10.This first electrode 12 have one first polarity and this second electrode 13 have one with this first opposite polarity second polarity.Identical with above embodiment, be that an auxiliary conductive layer (not shown) can be set on demand on the surface of each electrode 12,13.
Then, be to be provided as a revers voltage protection component 5 of revers voltage protective device, in the present embodiment, this revers voltage protection component 5 is a secondary light-emitting diode chip for backlight unit.It is being that non-light than this primary LED chip 1 penetrates the little first surface in surface 10 50, one and these first surface 50 opposing second surface 51 and first and second electrodes 52 and 53 that are installed on this second surface 51 and have this first polarity and this second polarity respectively on the area that this pair light-emitting diode chip for backlight unit 5 has one.Identical with above embodiment, on the surface of the electrode 52,53 of this pair light-emitting diode chip for backlight unit 5, also be to be provided with an aforesaid auxiliary conductive layer (not shown) on demand.
Penetrate towards the non-light of this primary LED chip 1 after non-light that the surface is set at this primary LED chip 1 for 10 times penetrates surface 10 at its first surface 50 in this pair light-emitting diode chip for backlight unit 5, an insulating barrier 2 is that the non-light that is formed at this primary LED chip 1 penetrates on the surface 10 and can cover this pair light-emitting diode chip for backlight unit 5.By exposure and development treatment, this insulating barrier 2 is to be formed with the exposed hole 20 that several are used to expose this primary LED chip 1 and the corresponding electrode 12,13,52,53 of this pair light-emitting diode chip for backlight unit 5, as shown in Figure 10.
Then, a protective layer 3 that is formed by opaque photoresist is to be formed on this insulating barrier 2.By exposure and development treatment; this protective layer 3 can be formed two two electrodes 12 that expose a correspondence of this primary LED chip 1 respectively that respectively are communicated with this insulating barrier 2 by fixed with pattern; 13 and of this pair light-emitting diode chip for backlight unit 5 have this corresponding electrode 12 with this primary LED chip 1; the electrode 53 of 13 opposite polarity polarity; 52 perforation 30, as shown in Figure 11.Two jointly are formed by any suitable method of any suitable material use as the conductor 4 of an electrode bonding conductor unit ' be embodiment as previously discussed is the same.Electrode 12 that exposes a correspondence of this primary LED chip at one of this insulating barrier 2 of each conductor 4 ' comprise; in 13 the exposed hole 20 can with this corresponding electrode 12 of this primary LED chip 1; 13 firsts that are electrically connected 40; the second portion 41 that is electrically connected in the perforation 30 of an exposed hole that in it, is formed with this first 40 20 that is communicated with this insulating barrier 2 at one of this protective layer 3 and with this first 40; and in exposed hole 20 that is communicated with this perforation 30 that in it, is formed with this second portion 41 at one of this insulating barrier 2 can with this electrode 53,52 of this pair light-emitting diode chip for backlight unit 5 and and third part 42 of being electrically connected of this second portion 41.
Should be noted that in each conductor 4 ' the surface of second portion 41 on also be to be provided with as mentioned above an auxiliary conductive layer (not shown) on demand.
Then, as shown in Figure 12, a cover layer 8 is to be formed on this protective layer 3.
By exposure and development treatment, this cover layer 8 be formed with two be used to expose corresponding conductor 4 ' the perforate 80 of a part of second portion 41.
After the formation of perforate 80, two outside connection electric conductor unit 9 are to be formed.Each is outside connect electric conductor unit 9 comprise a conductor 4 that in the perforate 80 of a correspondence of this cover layer 8, can be exposed with the perforate 80 corresponding by this ' the first electric conductor part 90 that is electrically connected of this part of second portion and one be electrically connected and the second electric conductor part 91 of projection outside this corresponding perforate 80 with this first electric conductor part 90.
Should be noted that identically with above embodiment, the Zener diode chip is can be used for replacing this pair light-emitting diode chip for backlight unit as the revers voltage protective device.On the other hand, identical with above embodiment, this LED encapsulation body can also send the LED encapsulation body that has by the light of the resulting color of light of the light that mixes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5 as a LED encapsulation body that sends the light that brightness is raised or as one.Because the condition of these variations is with above-described identical, repeats no more for this reason in this.
Figure 13-15 is the schematic flow diagram of the method for packing of the LED encapsulation body of demonstration the 3rd preferred embodiment of the present invention.
Seeing also a primary LED chip 1 shown in Figure 13, identical with disclosed primary LED chip in above preferred embodiment is at first to be provided.
Then, an insulating barrier 2 is that the non-light that is formed at this primary LED chip 1 penetrates on the surface 10.By exposure and development treatment, this insulating barrier 2 is the exposed holes 20 that are formed with the electrode 12,13 of two correspondences that are used to expose this primary LED chip 1.Each exposed hole 20 is bigger than the electrode of this primary LED chip 1 dimensionally.
Then, in each exposed hole 20, form a conductor 4 so that these conductors 4 are to be electrically connected with the corresponding electrode 12,13 of this primary LED chip 1.These conductors 4 are jointly as an electrode bonding conductor unit.Identical with above preferred embodiment, these conductors 4 are to be formed by any suitable material use picture printing as conducting resinl or metal material or any suitable method as the sputter.Also be to be provided with as mentioned above an auxiliary conductive layer (not shown) on demand on the surface of each conductor 4.
Subsequently, with at the identical revers voltage protecting component 5 of the revers voltage protecting component as reverse voltage protection device described in the second preferred embodiment be its second surface 51 penetrate towards the non-light of this primary LED chip 1 on the surface that the surface is arranged at this insulating barrier 2 for 10 times so that the first electrode 52 that should pair light-emitting diode chip for backlight unit (revers voltage protecting component) 5 be via a conductor 4 should pair light-emitting diode chip for backlight unit 5 with the second electrode 13 electrical connections of this primary LED chip 1 the second electrode 53 be via first electrode 12 electrical connections of another conductor 4 with this primary LED chip 1.
Now, see also shown in Figure 14ly, after the installation of this pair light-emitting diode chip for backlight unit 5, a cover layer 8 is to be formed on this insulating barrier 2 to cover this pair light-emitting diode chip for backlight unit 5.By exposure and development treatment, this cover layer 8 can be formed two perforates 80 that are used to expose the part of corresponding conductor 4 by fixed with pattern.
After the formation of perforate 80, as shown in Figure 15, two outside connection electric conductor unit 9 are to be formed.Each is outside to connect the first electric conductor part 90 that electric conductor unit 9 comprises a conductor 4 that can be exposed with the perforate 80 corresponding by this in the perforate 80 of a correspondence of this cover layer 8 this part is electrically connected and one and is electrically connected and the second electric conductor part 91 of projection outside this corresponding perforate 80 with this first electric conductor part 90.
Should be noted that identically with above embodiment, the Zener diode chip is can be used for replacing this pair light-emitting diode chip for backlight unit as the revers voltage protective device.On the other hand, identical with above embodiment, this LED encapsulation body can also send the LED encapsulation body that has by the light of the resulting color of light of the light that mixes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5 as a LED encapsulation body that sends the light that brightness is raised or as one.Since the condition of these variations be with above-described identical, repeat no more for this reason in this.
Figure 16-19 is the schematic flow diagram of the method for packing of the LED encapsulation body of demonstration the 4th preferred embodiment of the present invention.
As shown in Figure 16, identical with disclosed primary LED chip in an above embodiment primary LED chip 1 is at first to be provided.
Then, an insulating barrier 2 that is formed by opaque photoresist is that the non-light that is formed at this primary LED chip 1 penetrates on the surface 10.By exposure and development treatment, this insulating barrier 2 is formed with second exposed hole 22 that first exposed hole 21 of first electrode 12 that is used to expose this primary LED chip 1 and are used to expose second electrode 13 of this primary LED chip 1, this first exposed hole 21 is bigger than the electrode 12,13 of this primary LED chip 1 dimensionally.
Then, a conductor 4 is to be formed in this first exposed hole 21 so that this conductor 4 is first electrodes 12 with this primary LED chip 1 is electrically connected.Identical with above preferred embodiment, this conductor 4 is by any suitable material use picture printing as conducting resinl or metal material or any suitable method as the sputter is formed and be to be provided with as mentioned above an auxiliary conductive layer (not shown) on demand on the surface of this conductor 4.
Subsequently, the revers voltage protection component 5 as the revers voltage protective device is to be provided.This revers voltage protection component 5 be a secondary light-emitting diode chip for backlight unit and have a first surface 50 that one first electrode 52 is installed thereon and one be equipped with thereon one second electrode 53 and with these first surface 50 opposing second surface 51.This pair light-emitting diode chip for backlight unit 5 is to penetrate that the surface is arranged at for 10 times on this insulating barrier 2 so that second electrode 53 that should pair light-emitting diode chip for backlight unit 5 is to be electrically connected via first electrode 12 of this conductor 4 with this primary LED chip 1 at its second surface 51 towards the non-light of this primary LED chip 1.
Then, first protective layer 3 that forms by opaque photoresist ' be to be formed on this insulating barrier 2.Three of this first protective layers 3 ' be formed with are respectively applied for the perforation 31 of the part of second electrode 13 of first electrode 52 that exposes this pair light-emitting diode chip for backlight unit 5, this primary LED chip 1 and this conductor 4, as shown in Figure 17.
Subsequently, see also shown in Figure 180, second protective layer 7 that forms by opaque photoresist ' be formed at this first protective layer 3 ' on.
By exposure and development treatment; one of this second protective layer 7 ' be formed with and this first protective layer 3 ' this a part of perforation 31 of this conductor 4 of exposure be communicated with first perforation 71 of this part that can expose this conductor 4 and one make this first protective layer 3 ' second perforation 72 that is communicated with of other perforations 31, as shown in Figure 19.
Then, this first protective layer 3 ' perforation 31 and this second protective layer 7 ' first perforation 71 in formation one conductor 4 " so that this conductor 4 " be that this part with this conductor 4 is electrically connected.On the other hand, this first protective layer 3 ' these other perforations 31 and this second protective layer 7 ' second perforation 72 in form a conductor 4 ' so that second electrode 13 of this primary LED chip 1 is via this conductor 4 ' come and first electrode 52 of this pair light-emitting diode chip for backlight unit 5 is electrically connected.These conductors 4,4 ', 4 " jointly as an electrode bonding conductor unit.
Then, a cover layer 8 that forms by opaque photoresist be formed at this second protective layer 7 ' on.Two of this cover layers 8 ' be formed be used to expose the conductor 4 of the correspondence of this electrode bonding conductor unit ', 4 " the perforate 80 of a part.
Subsequently, two outside connection electric conductor unit 9 are to be formed.Each is outside connect electric conductor unit 9 comprise one in the perforate 80 of a correspondence of this cover layer 8 can with by the conductor 4 of 80 exposed electrodes bonding conductors of this corresponding perforate unit ', 4 " the first electric conductor part 90 that is electrically connected of this part and one be electrically connected and the second electric conductor part 91 of projection outside this corresponding perforate 80 with this first electric conductor part 90.
Should be noted that identically with above embodiment, the Zener diode chip is can be used for replacing this pair light-emitting diode chip for backlight unit as the revers voltage protective device.On the other hand, identical with above embodiment, this LED encapsulation body can also send the LED encapsulation body that has by the light of the resulting color of light of the light that mixes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5 as a LED encapsulation body that sends the light that brightness is raised or as one.Since the condition of these variations be with above-described identical, repeat no more for this reason in this.
Figure 20-21 shows that the LED encapsulation body of the light that brightness is raised is sent in one of the conduct of the 5th preferred embodiment of the present invention or sends as one to have by the advocate peace schematic flow diagram of method for packing of LED encapsulation body of light of the resulting color of light of secondary light-emitting diode chip for backlight unit of mixing.
As shown in Figure 20, one is at first to be provided with disclosed primary LED chip is identical in above embodiment primary LED chip 1.
Then, conductive metal layer 43 as an electrode bonding conductor unit be the non-light that is formed at this primary LED chip penetrate surface 10 this first electrode 12 and near surf zone on.Be noted that this conductive metal layer 43 is transparent conductive metal layer, as ITO.
Then, a secondary light-emitting diode chip for backlight unit 5, its have a first surface 50 that one first electrode 52 is installed thereon and one be equipped with thereon one second electrode 53 and with these first surface 50 opposing second surface 51, be to penetrate that the surface is arranged at for 10 times on this conductive metal layer 43 so that second electrode 53 that should pair light-emitting diode chip for backlight unit 5 is to be electrically connected via the conductive metal layer 43 of this electrode bonding conductor unit first electrode 12 with this primary LED chip 1 towards the non-light of this primary LED chip 1 at its second surface 51.
Then, a cover layer 8 that is formed by opaque photoresist is that the non-light that is formed at this primary LED chip 1 penetrates on the surface 10 so that should be capped by pair light-emitting diode chip for backlight unit 5, as shown in Figure 21.By exposure with show to handle, this cover layer 8 is formed with two perforates 80 that are respectively applied for first electrode 52 of second electrode 13 that exposes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5.
Subsequently, two outside electric conductor unit 9 that connect are formed.Each is outside to connect electric conductor unit 9 and comprises first an electric conductor part 90 that can be electrically connected with perforate 80 exposed electrodes 13,52 corresponding by this and one be electrically connected and the second electric conductor part of projection outside this corresponding perforate 80 with this first electric conductor part 90 in the perforate 80 of a correspondence of this cover layer 8.
The schematic flow diagram of the method for packing of the LED encapsulation body of Figure 22-25 demonstration the 6th preferred embodiment of the present invention.
See also shown in Figure 22,23, wherein, Figure 23 is the flat sheet of the bottom view of Figure 22.At first, one be at first to be provided at the identical primary LED chip 1 of the primary LED chip described in the above preferred embodiment.
Then, as a revers voltage protection component 5 of revers voltage protective device ' be that the non-light that is set at this primary LED chip 1 penetrates on the surface 10.In the present embodiment, this revers voltage protection component 5 ' be secondary light-emitting diode chip for backlight unit and have respectively first and second electrode zones of aiming at the electrode 12,13 of this primary LED chip 1 54,55.This first region territory 54 has this first polarity and this second electrode region 55 has this second polarity.These electrode zones 54,55 respectively are formed with the perforation 56 of the electrode 13,12 of a correspondence that exposes this primary LED chip 1.
Then, as shown in Figure 24,25, two outside electric conductor unit 9 that connect are formed.Each is outside to connect that electric conductor unit 9 comprises that first an electric conductor part 90 that can be electrically connected with perforation 56 exposed electrodes 12,13 corresponding by this and one are electrically connected with this first electric conductor part 90 in the perforation 56 of a correspondence and the second electric conductor part 91 that projection can be electrically connected with the external circuit (not shown) outside this perforation 56.Since these outside first electric conductor parts 90 that connect electric conductor unit 9 be this reverse protection component 5 ' perforation 56 in, so this revers voltage protection component 5 ' the first region territory 54 be second electrode 13 with this primary LED chip 1 be electrically connected and this revers voltage protection component 5 ' the second electrode region 55 be that first electrode 12 with this primary LED chip 1 is electrically connected.
Should be noted that identically with above embodiment, the Zener diode chip is can be used for replacing this pair light-emitting diode chip for backlight unit as the revers voltage protective device.On the other hand, identical with above embodiment, this LED encapsulation body can also as a LED encapsulation body that sends the light that brightness is raised or as one send have by the light that mixes this primary LED chip 1 and this pair light-emitting diode chip for backlight unit 5 ' the LED encapsulation body of light of the resulting color of light.Because the condition of these variations is identical with described in first to fourth embodiment, repeats no more for this reason in this.
Figure 26-30 is the schematic flow diagram of method for packing of the LED encapsulation body of the 7th preferred embodiment of the present invention.
See also shown in Figure 26ly, at first, a primary LED chip 1 identical with primary LED chip in above-described preferred embodiment is at first to be provided.
Then, the revers voltage protection component 5 as the revers voltage protective device " is that the non-light that is arranged at this primary LED chip 1 penetrates on the surface 10.In the present embodiment, this revers voltage protection component 5 " is that a capacitor and its first electrode 57 with this first polarity are to extend near second electrode 13 of this light-emitting diode chip for backlight unit 1 and its second electrode 58 with this second polarity is to extend near first electrode 12 of this primary LED chip 1.
Then, as shown in Figure 27,28, an insulating barrier 2 is that the non-light that is formed at this light-emitting diode chip for backlight unit 1 penetrates on the surface 10 and can cover this revers voltage protection component 5 ".By exposure and development treatment, this insulating barrier 2 can be formed with two electrode 12,13 and this revers voltage protection components 5 that respectively are used to expose a correspondence of this primary LED chip 1 by fixed with pattern " near the electrode 58,57 this corresponding electrode 12,13.
Then, as shown in Figure 29, an electrode bonding conductor unit is formed.This electrode bonding conductor unit comprises the conductors 4 in the exposed hole 20 of two correspondences that respectively are formed at this insulating barrier 2 so that each conductor 4 is the electrodes 12 with this primary LED chip 1 that is exposed by this corresponding exposed hole 20; 13 and this revers voltage protection component 5 " electrode 58,57 be electrically connected.
After the formation of electrode bonding conductor unit, a cover layer 8 is to be formed on this insulating barrier 2.
See also shown in Figure 30ly, by exposure and development treatment, this cover layer 8 can be formed two perforates 80 that are used to expose the part of corresponding conductor 4 by fixed with pattern.
After the formation of perforate 80, two outside electric conductor unit 9 that connect are formed.Each is outside to connect that the first electric conductor part 90 that electric conductor unit 9 comprises a conductor 4 that can be exposed with the perforate 80 corresponding by this in the perforate 80 of a correspondence this part is electrically connected and one are electrically connected with this first electric conductor part 90 and the second electric conductor part 91 that projection can be electrically connected with the external circuit (not shown) outside this perforate 80.
Should be appreciated that, can also be applied to the of the present invention first to fourth and the 6th preferred embodiment as the revers voltage protective device with capacitor.
Above-mentioned take off graphic and explanation only be embodiments of the invention, and be non-for limiting protection scope of the present invention, allly changes or modifications according to other equivalences that the present invention did, and all should be encompassed in the protection range of this case.
[the main element conventional letter table of accompanying drawing]
1 primary LED chip, 10 non-light penetrate the surface
11 light penetrate surface 12 first electrodes
13 second electrodes, 2 insulating barriers
20 exposed holes, 3 protective layers
30 perforations, 4 conductors
5 revers voltage protection components, 50 first surfaces
51 second surfaces, 52 first electrodes
53 second electrodes, 6 insulating barriers
60 exposed holes, 7 protective layers
70 perforations, 8 cover layers
80 perforates, the 9 outside electric conductor unit that connect
90 first electric conductor parts, 91 second electric conductor parts
4 ' conductor, 40 firsts
41 second portions, 42 third parts
2 ' insulating barrier, 21 first exposed holes
22 second exposed holes, 3 ' the first protective layers
31 perforations, 7 ' the second protective layers
71 first perforations, 72 second perforations
4 " conductor 43 conductive metal layers
5 ' revers voltage protection component, 54 the first region territories
55 the second electrode regions, 56 perforations
5 " revers voltage protection component 57 first electrodes
58 second electrodes

Claims (68)

1. the method for packing of a LED encapsulation body is characterized in that: comprise following step:
Provide one can be energized the primary LED chip that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and one of be installed in this two surface lip-deep first electrode with one first polarity, reach one and one of be installed in this two surface lip-deep second electrode that has with this first opposite polarity second polarity;
Non-light in this light-emitting diode chip for backlight unit penetrates the revers voltage protection component that a revers voltage protective device is set on the surface, and this revers voltage protection component has first electrode with this first polarity, and second electrode with this second polarity;
Form one be used to set up at least one one of them electrode of this primary LED chip and this revers voltage protection component one have and the electrode of the opposite polarity polarity of this one of them electrode of this primary LED chip between the electrode bonding conductor unit that is electrically connected; And
Forming at least two is used for this electrode that is electrically connected each other is electrically connected to connection electric conductor unit outside the external circuit.
2. the method for packing of LED encapsulation body as claimed in claim 1 is characterized in that: in the step that the primary LED chip is provided, more be contained in the step that forms an auxiliary conductive layer on each electrode of this primary LED chip.
3. the method for packing of LED encapsulation body as claimed in claim 1; it is characterized in that: in the step that the primary LED chip is provided; first and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface; this provides the step of primary LED chip more to be contained in this non-light and penetrates the step that the surface forms an opaque insulating layer and form an opaque protective layer on this insulating barrier; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole
In the step that the revers voltage protection component is set; this revers voltage protection component comprises a secondary light-emitting diode chip for backlight unit; this pair light-emitting diode chip for backlight unit have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface; this step that revers voltage protection component is set more is contained in the step that this second surface forms an opaque insulating layer and form an opaque protective layer on this insulating barrier; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this pair light-emitting diode chip for backlight unit; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole; this pair light-emitting diode chip for backlight unit is to penetrate under the surface towards the non-light of this primary LED chip at its second surface to be arranged on the protective layer of this primary LED chip; the perforation of the protective layer of this primary LED chip perforation than the protective layer of this pair light-emitting diode chip for backlight unit dimensionally is big
In the step that forms electrode bonding conductor unit; This electrode bonding conductor unit comprises the interior conductor that is electrically connected with a corresponding electrode of exposed hole that several perforations that respectively are formed at a correspondence and the perforation corresponding with this be communicated with so that first electrode of this primary LED chip is second electrode that is electrically connected to this pair light-emitting diode chip for backlight unit via corresponding conductor; And second electrode of this primary LED chip is first electrode that is electrically connected to this pair light-emitting diode chip for backlight unit via the conductor of correspondence
Before forming outside connection electric conductor unit; more be contained in and form an opaque tectal step on the protective layer of this primary LED chip; this cover layer covers this pair light-emitting diode chip for backlight unit and is formed with the perforate of the part of the conductor in the perforation of two correspondences that respectively are used to expose the protective layer that is formed on this primary LED chip, and
In forming the outside step that connects the electric conductor unit, each is outside to connect electric conductor unit and comprises first conductor part that is electrically connected with this part by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
4. the method for packing of LED encapsulation body as claimed in claim 1; it is characterized in that: in the step that the primary LED chip is provided; first and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface; this provides the step of primary LED chip more to be contained in this non-light and penetrates the step that the surface forms an insulating barrier and form a protective layer on this insulating barrier; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole
In the step that the revers voltage protection component is set; this revers voltage protection component comprises a Zener diode chip for backlight unit; it is relative with this first surface with one and the second surface of this first and second electrode is installed thereon that this Zener diode chip has a first surface; this step that revers voltage protection component is set more is contained in the step that this second surface forms an insulating barrier and form a protective layer on this insulating barrier; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this Zener diode chip; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole; this Zener diode chip is to be arranged on the protective layer of this primary LED chip under the non-light ejaculation surface of this primary LED chip at its second surface; the perforation of the protective layer of this primary LED chip perforation than the protective layer of this Zener diode chip dimensionally is big
In the step that forms electrode bonding conductor unit; This electrode bonding conductor unit comprises in the exposed hole of several perforations that respectively are formed at a correspondence and the perforation corresponding with this connection the conductor that can be electrically connected with a corresponding electrode so that first electrode of this primary LED chip is second electrode that is electrically connected to this Zener diode chip via corresponding conductor; And second electrode of this primary LED chip is first electrode that is electrically connected to this Zener diode chip via the conductor of correspondence
Before forming outside connection electric conductor unit; more be contained in and form a tectal step on the protective layer of this primary LED chip; this cover layer covers this Zener diode chip and is formed with the perforate of the part of the conductor in the perforation of two correspondences that respectively are used to expose the protective layer that is formed on this primary LED chip, and
In forming the outside step that connects the electric conductor unit, each is outside to connect electric conductor unit and comprises first conductor part that can be electrically connected with this part by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
5. as the method for packing of claim 3 or 4 described LED encapsulation bodies, it is characterized in that: in the step that forms electrode bonding conductor unit, this conductor is to be formed by printing treatment by conducting resinl.
6. as the method for packing of claim 3 or 4 described LED encapsulation bodies, it is characterized in that: in the step that forms electrode bonding conductor unit, this conductor is to be handled by sputter by metal material to be formed.
7. as the method for packing of claim 3 or 4 described LED encapsulation bodies, it is characterized in that: after the step that forms electrode bonding conductor unit, more be contained in the step that forms an auxiliary conductive layer on this surface of conductors.
8. as the method for packing of claim 3 or 4 described LED encapsulation bodies, it is characterized in that: in the step that forms outside connection electric conductor, first and second conductor parts that this outside connects electric conductor are to be formed by identical electric conducting material.
9. as the method for packing of claim 3 or 4 described LED encapsulation bodies, it is characterized in that: in the step that forms outside connection electric conductor, first and second conductor parts that this outside connects electric conductor are to be formed by different electric conducting materials.
10. the method for packing of LED encapsulation body as claimed in claim 1 is characterized in that: in the step that the primary LED chip is provided, first and second electrodes of this primary LED chip are arranged on this non-light and penetrate on surface,
In the step that the revers voltage protection component is set; this revers voltage protection component comprises a secondary light-emitting diode chip for backlight unit; its have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface; this pair light-emitting diode chip for backlight unit is to penetrate the non-light that is arranged at this primary LED chip under the surface at its first surface towards the non-light of this primary LED chip to penetrate on the surface
After the step that this revers voltage protection component is set; the non-light that more is contained in this primary LED chip penetrates the surface and goes up the step that forms an opaque insulating layer and form an opaque protective layer on this insulating barrier; this insulating barrier is formed with several exposed holes that is used to expose this primary LED chip and the corresponding electrode of this pair light-emitting diode; this protective layer is formed with two and respectively is communicated with two of this insulating barrier and exposes the electrode of a correspondence of this primary LED chip and this pair light-emitting diode chip for backlight unit one respectively and have perforation with the electrode of the opposite polarity polarity of this corresponding electrode of this primary LED chip
In the step that forms electrode bonding conductor unit; this electrode bonding conductor unit comprises two conductors; each conductor comprises a first that is electrically connected with this corresponding electrode of this primary LED chip in one of this insulating barrier exposes the exposed hole of electrode of a correspondence of this primary LED chip; the second portion that is electrically connected in the perforation of an exposed hole that in it, is formed with this first that is communicated with this insulating barrier at one of this protective layer and with this first; and in exposed hole that is communicated with this perforation that in it, is formed with this second portion at one of this insulating barrier with this electrode of this pair light-emitting diode chip for backlight unit and the third part that is electrically connected with this second portion
Form outside connect the electric conductor unit before, more be contained in and form an opaque tectal step on this protective layer, this cover layer is formed with the perforate of the second portion of two conductors that respectively are used to expose a correspondence, and
In forming the outside step that connects the electric conductor unit, each is outside to connect electric conductor unit and comprises first conductor part that can be electrically connected with the second portion by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
11. the method for packing of LED encapsulation body as claimed in claim 1 is characterized in that: in the step that the primary LED chip is provided, first and second electrodes of this primary LED chip are arranged on this non-light and penetrate on the surface,
In the step that the revers voltage protection component is set; this revers voltage protection component comprises a Zener diode chip for backlight unit; its have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface; this Zener diode chip is to penetrate on the non-light ejaculation surface that is arranged at this primary LED chip under the surface at the non-light of its first surface towards this primary LED chip
After the step that this revers voltage protection component is set; the non-light that more is contained in this primary LED chip penetrates the surface and goes up the step that forms an insulating barrier and form a protective layer on this insulating barrier; this insulating barrier is formed with several exposed holes that is used to expose this primary LED chip and the corresponding electrode of this Zener diode; this protective layer is formed with two and respectively is communicated with two of this insulating barrier and exposes the electrode of a correspondence of this primary LED chip and this Zener diode chip one respectively and have perforation with the electrode of the opposite polarity polarity of this corresponding electrode of this primary LED chip
In the step that forms electrode bonding conductor unit; this electrode bonding conductor unit comprises two conductors; each conductor comprises a first that can be electrically connected with this corresponding electrode of this primary LED chip in one of this insulating barrier exposes the exposed hole of electrode of a correspondence of this primary LED chip; the second portion that is electrically connected in the perforation of an exposed hole that in it, is formed with this first that is communicated with this insulating barrier at one of this protective layer and with this first; and in exposed hole that is communicated with this perforation that in it, is formed with this second portion at one of this insulating barrier can with this electrode of this Zener diode chip and the third part that is electrically connected with this second portion
Form outside connect the electric conductor unit before, more be contained in and form a tectal step on this protective layer, this cover layer is formed with the perforate of the second portion of two conductors that respectively are used to expose a correspondence, and
In forming the outside step that connects the electric conductor unit, each is outside to connect electric conductor unit and comprises first conductor part that can be electrically connected with the second portion by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
12. the method for packing as claim 10 or 11 described LED encapsulation bodies is characterized in that: in the step that forms electrode bonding conductor unit, these conductors are to be formed by printing treatment by conducting resinl.
13. the method for packing as claim 10 or 11 described LED encapsulation bodies is characterized in that: in the step that forms electrode bonding conductor unit, this conductor is to be handled by sputter by metal material to be formed.
14. the method for packing as claim 10 or 11 described LED encapsulation bodies is characterized in that: after the step that forms electrode bonding conductor unit, more be contained in the step that forms an auxiliary conductive layer on this surface of conductors.
15. the method for packing as claim 10 or 11 described LED encapsulation bodies is characterized in that: in the step that forms outside connection electric conductor, first and second conductor parts that this outside connects electric conductor are to be formed by identical electric conducting material.
16. the method for packing as claim 10 or 11 described LED encapsulation bodies is characterized in that: in the step that forms outside connection electric conductor, first and second conductor parts that this outside connects electric conductor are to be formed by different electric conducting materials.
17. the method for packing of LED encapsulation body as claimed in claim 1 is characterized in that: in the step that the primary LED chip is provided, first and second electrodes of this primary LED chip are arranged on this non-light and penetrate on the surface,
After the step that the primary LED chip is provided, the non-light that more is contained in this primary LED chip penetrates the surface and goes up the step that forms an opaque insulating layer, this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip, each exposed hole is bigger than the electrode of this primary LED chip dimensionally
In the step that forms electrode bonding conductor unit, this electrode bonding conductor unit comprises conductor in the exposed hole of two correspondences that are formed at this insulating barrier so that this conductor is to be electrically connected with the corresponding electrode of this primary LED chip,
In the step that the revers voltage protection component is set; this revers voltage protection component comprises a secondary light-emitting diode chip for backlight unit; its have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface; this pair light-emitting diode chip for backlight unit is to penetrate that the non-light that is arranged at this primary LED chip under the surface penetrates on the surface so that first electrode that should the pair light-emitting diode chip for backlight unit is a conductor via this electrode bonding conductor unit to be electrically connected with second electrode of this primary LED chip at its second surface towards the non-light of this primary LED chip; and second electrode that should the pair light-emitting diode chip for backlight unit to be another conductor via this electrode bonding conductor unit to be electrically connected with first electrode of this primary LED chip
After the step that this revers voltage protection component is set, more be contained on this insulating barrier and form an opaque tectal step, this cover layer is formed with the perforate of the part of two conductors that respectively are used to expose a correspondence, and
In forming the outside step that connects the electric conductor unit, each is outside to connect electric conductor unit and comprises first conductor part that is electrically connected with this part by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
18. the method for packing of LED encapsulation body as claimed in claim 1 is characterized in that: in the step that the primary LED chip is provided, first and second electrodes of this primary LED chip are arranged on this non-light and penetrate on the surface,
After the step that this primary LED chip is provided, the non-light that more is contained in this primary LED chip penetrates the surface and goes up the step that forms an insulating barrier, this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip, each exposed hole is bigger than the electrode of this primary LED chip dimensionally
In the step that forms electrode bonding conductor unit, this electrode bonding conductor unit comprises conductor in the exposed hole of two correspondences that are formed at this insulating barrier so that this conductor is to be electrically connected with the corresponding electrode of this primary LED chip,
In the step that the revers voltage protection component is set; this revers voltage protection component comprises a Zener diode chip for backlight unit; its have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface; this Zener diode chip is to penetrate on the non-light ejaculation surface that is arranged at this primary LED chip under the surface so that first electrode of this Zener diode chip is to be electrically connected via next second electrode with this primary LED chip of a conductor of this electrode bonding conductor unit at the non-light of its second surface towards this primary LED chip; and second electrode of this Zener diode chip is to be electrically connected via next first electrode with this primary LED chip of another conductor of this electrode bonding conductor unit
After the step that this revers voltage protection component is set, more comprise and form the step of a cover layer on this insulating barrier, this cover layer is formed with the perforate of the part of two conductors that respectively are used to expose a correspondence, and
In forming the outside step that connects the electric conductor unit, each is outside to connect electric conductor unit and comprises first conductor part that is electrically connected with this part by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
19. the method for packing as claim 17 or 18 described LED encapsulation bodies is characterized in that: in the step that forms electrode bonding conductor unit, this conductor is to be formed by printing treatment by conducting resinl.
20. the method for packing as claim 17 or 18 described LED encapsulation bodies is characterized in that: in the step that forms electrode bonding conductor unit, this conductor is to be handled by sputter by metal material to be formed.
21. the method for packing as claim 17 or 18 described LED encapsulation bodies is characterized in that: after the step that forms electrode bonding conductor unit, more be contained in the step that forms an auxiliary conductive layer on this surface of conductors.
22. the method for packing as claim 17 or 18 described LED encapsulation bodies is characterized in that: in the step that forms outside connection electric conductor, first and second conductor parts that this outside connects electric conductor are to be formed by identical electric conducting material.
23. method for packing as claim 17 or 18 described LED encapsulation bodies, it is characterized in that: in the step that forms outside connection electric conductor, first and second conductor parts that this outside connects electric conductor are to be formed by different electric conducting materials, in the step that forms electrode bonding conductor unit, this conductor is to be formed by printing treatment by conducting resinl.
24. the method for packing of LED encapsulation body as claimed in claim 1 is characterized in that: in the step that the primary LED chip is provided, first and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface,
After the step that the primary LED chip is provided, the non-light that more is contained in this primary LED chip penetrates the surface and goes up the step that forms an opaque insulating layer, this insulating barrier is formed with second exposed hole that first exposed hole of first electrode that is used to expose this primary LED chip and are used to expose second electrode of this primary LED chip, this first exposed hole is bigger than the electrode of this primary LED chip dimensionally
In the step that forms electrode bonding conductor unit, this electrode bonding conductor unit comprise one in first exposed hole that is formed at this insulating barrier conductor so that this conductor be with this primary LED chip first electrode be electrically connected,
In the step that the revers voltage protection component is set; this revers voltage protection component comprises a secondary light-emitting diode chip for backlight unit; its have a first surface that this first electrode is installed thereon and one be equipped with thereon this second electrode and with this first surface opposing second surface; this pair light-emitting diode chip for backlight unit is to penetrate that the non-light that is arranged at this primary LED chip under the surface penetrates on the surface so that second electrode that should the pair light-emitting diode chip for backlight unit is a conductor via this electrode bonding conductor unit to be electrically connected with first electrode of this primary LED chip at its second surface towards the non-light of this primary LED chip
After the step that this revers voltage protection component is set; more be contained in the step that forms opaque first protective layer on this insulating barrier and on this first protective layer, form opaque second protective layer; this first protective layer is formed with three and is respectively applied for first electrode that exposes this pair light-emitting diode chip for backlight unit; second electrode of this primary LED chip; perforation with the part of this conductor; this second protective layer is formed with this a part of perforation with the conductor of this electrode bonding conductor unit of exposure of this first protective layer and is communicated with second through hole that is communicated with first perforation of this part of the conductor that exposes this electrode bonding conductor unit and other perforations that one makes this first protective layer
In the step that forms electrode bonding conductor unit; this electrode bonding conductor unit more comprises a conductor that is electrically connected with this part of this conductor in first perforation of the perforation of this first protective layer and this second protective layer; and the conductor that is electrically connected of first electrode of second electrode that in second perforation of these other perforations of this first protective layer and this second protective layer, makes this primary LED chip and this pair light-emitting diode chip for backlight unit
Before the step that forms outside connection electric conductor unit; more comprise one and on this second protective layer, form an opaque tectal step; this cover layer is formed with the perforate of the part of two conductors that are used to be exposed to the correspondence in this first and second perforation, and
In forming the outside step that connects the electric conductor unit, each is outside to connect electric conductor unit and comprises first electric conductor part that can be electrically connected with this part by this corresponding conductor that perforate exposed and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor in the perforate of this tectal correspondence.
25. the method for packing of LED encapsulation body as claimed in claim 1 is characterized in that:
In the step that the primary LED chip is provided, first and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface,
After the step that the primary LED chip is provided, more comprise formation one opaque insulating layer and penetrate lip-deep step in the non-light of this primary LED chip, this insulating barrier is formed with second exposed hole that first exposed hole of first electrode that is used to expose this primary LED chip and are used to expose second electrode of this primary LED chip, this first exposed hole is bigger than the electrode of this primary LED chip dimensionally
In the step that forms electrode bonding conductor unit, this electrode bonding conductor unit comprise one in first exposed hole that is formed at this insulating barrier conductor so that this conductor be with this primary LED chip first electrode be electrically connected,
In the step that the revers voltage protection component is set; this revers voltage protection component comprises a Zener diode chip for backlight unit; this Zener diode chip have a first surface that this first electrode is installed and one be equipped with this second electrode and with this first surface opposing second surface; this Zener diode chip is to penetrate on the surface towards the non-light that the non-light of this primary LED chip penetrates the surface and is arranged at this primary LED chip with its second surface; so that second electrode of this Zener diode chip is to be electrically connected via next first electrode with this primary LED chip of the conductor of this electrode bonding conductor unit
After the step that this revers voltage protection component is set; more be contained in the step that forms opaque first protective layer on this insulating barrier and on this first protective layer, form opaque second protective layer; this first protective layer is formed with three and is respectively applied for first electrode that exposes this Zener diode chip; second electrode of this primary LED chip; perforation with the part of this conductor; this second protective layer is formed with that this a part of perforation with the conductor of this electrode bonding conductor unit of exposure of this first protective layer is communicated with and first perforation and one makes this first protective layer second through hole that other perforations are communicated with of this part that expose the conductor of this electrode bonding conductor unit
In the step that forms electrode bonding conductor unit; this electrode bonding conductor unit more comprises a conductor that is electrically connected with this part of this conductor in first perforation of the perforation of this first protective layer and this second protective layer; and the conductor that is electrically connected of first electrode of second electrode that in second perforation of these other perforations of this first protective layer and this second protective layer, makes this primary LED chip and this Zener diode chip
Before the step that forms outside connection electric conductor unit; more comprise one and on this second protective layer, form an opaque tectal step; this cover layer is formed with the perforate of the part of two conductors that are used to be exposed to the correspondence in this first and second perforation, and
In forming the outside step that connects the electric conductor unit, each is outside connect electric conductor unit comprise first electric conductor that in the perforate of this tectal correspondence, is electrically connected with this part by this corresponding conductor that perforate exposed partly and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor.
26. the method for packing as claim 24 or 25 described LED encapsulation bodies is characterized in that: in the step that forms the first and second electrode bonding conductor unit, this conductor is to be formed by printing treatment by conducting resinl.
27. the method for packing as claim 24 or 25 described LED encapsulation bodies is characterized in that: in the step that forms the first and second electrode bonding conductor unit, this conductor is to be handled by sputter by metal material to be formed.
28. the method for packing as claim 24 or 25 described LED encapsulation bodies is characterized in that: after the step that forms the first and second electrode bonding conductor unit, more be contained in the step that forms an auxiliary conductive layer on this surface of conductors.
29. the method for packing as claim 24 or 25 described LED encapsulation bodies is characterized in that: in the step that forms outside connection electric conductor, first and second conductor parts that this outside connects electric conductor are to be formed by identical electric conducting material.
30. the method for packing as claim 24 or 25 described LED encapsulation bodies is characterized in that: in the step that forms outside connection electric conductor, these outside first and second conductor parts that connect electric conductors are to be formed by different electric conducting materials.
31. the method for packing of a LED encapsulation body is characterized in that: comprise following step:
Provide one can be energized the primary LED chip that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and one of be installed in this two surface lip-deep first electrode with one first polarity, reach one and one of be installed in this two surface lip-deep second electrode that has with this first opposite polarity second polarity;
Non-light in this light-emitting diode chip for backlight unit penetrates the revers voltage protection component that a revers voltage protective device is set on the surface, this revers voltage protection component has first and second electrode zones with the electrode alignment of this primary LED chip, this the first region territory has this first polarity and this second electrode region has this second polarity, and this first, second electrode zone respectively is formed with one and exposes the perforation that one of this primary LED chip has the electrode of polarity opposite polarity with it; And
Form at least two connection electric conductor unit, outside that are used for this first, second electrode is electrically connected to external circuit.
32. the method for packing of LED encapsulation body as claimed in claim 31 is characterized in that: the primary LED chip is being provided, and first and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface,
In the step that this revers voltage protection component is set, this revers voltage protection component is a secondary light-emitting diode chip for backlight unit, and
In forming the outside step that connects the electric conductor unit, each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with the corresponding electrode zone of the corresponding electrode of this primary LED chip and this pair light-emitting diode and one partly are electrically connected and the second electric conductor part of projection outside this corresponding perforation with this first electric conductor in the perforation of a correspondence.
33. the method for packing of LED encapsulation body as claimed in claim 31 is characterized in that: the primary LED chip is being provided, and first and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface,
In the step that this revers voltage protection component is set, this revers voltage protection component is a Zener diode chip for backlight unit, and
In forming the outside step that connects the electric conductor unit, each is outside to connect electric conductor unit comprise that first electric conductor part that can be electrically connected with the corresponding electrode zone of the corresponding electrode of this primary LED chip and this Zener diode and one partly are electrically connected and the second electric conductor part of projection outside this corresponding perforation with this first electric conductor in the perforation of a correspondence.
34. the method for packing as claim 32 or 33 described LED encapsulation bodies is characterized in that: in the step of diode chip for backlight unit is provided, more be contained in the step that forms an auxiliary conductive layer on each electrode of this diode chip for backlight unit.
35. the method for packing as claim 32 or 33 described LED encapsulation bodies is characterized in that: in the step that forms outside connection electric conductor unit, first and second electric conductors that this outside connects electric conductor partly are to be formed by identical electric conducting material.
36. the method for packing as claim 32 or 33 described LED encapsulation bodies is characterized in that: in the step that forms outside connection electric conductor unit, first and second electric conductors that this outside connects electric conductor partly are to be formed by different electric conducting materials.
37. the method for packing of a LED encapsulation body is characterized in that: comprise following step:
Provide one can be energized the light-emitting diode chip for backlight unit that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with first polarity in this two surface, reach one and be installed on identical lip-deep second electrode that has with this first opposite polarity second polarity with this first electrode;
Non-light in this light-emitting diode chip for backlight unit penetrates the revers voltage protection component that a revers voltage protective device is set on the surface, this revers voltage protection component is a capacitor, and this capacitor has near two electrodes with reciprocal polarity the electrode in two electrodes that respectively extend to this light-emitting diode chip for backlight unit;
Form an insulating barrier on this electrode of light emitting diode installation surface, this insulating barrier is the perforation that is set near the electrode this corresponding electrode that extends in light-emitting diode chip for backlight unit that forms two corresponding electrodes that are used to expose this light-emitting diode chip for backlight unit and this revers voltage protection component with pattern by exposure and development treatment;
Form an electrode bonding conductor unit, this electrode bonding conductor unit comprises two each conductors that the electrode of this electrode of light emitting diode that this perforation by this insulating barrier exposed and this revers voltage protection component is electrically connected;
Form a cover layer on the surface of this insulating barrier, this cover layer is formed with the exposed hole of a part of the conductor of two correspondences that are used to expose this electrode bonding conductor unit; And
Form at least two outside electric conductor unit that connect, each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with this part of corresponding conductor and one partly are electrically connected and the second electric conductor part of projection outside this exposed hole with this first electric conductor in the exposed hole of a correspondence.
38. the method for packing of LED encapsulation body as claimed in claim 37, it is characterized in that: light-emitting diode chip for backlight unit is being provided and is forming in the step of electrode bonding conductor unit, more be contained in each electrode of this light-emitting diode chip for backlight unit and on each conductor of this electrode bonding conductor unit, form the step of an auxiliary conductive layer.
39. the method for packing of LED encapsulation body as claimed in claim 37 is characterized in that: in the step that forms outside connection electric conductor unit, first and second electric conductors that this outside connects electric conductor partly are to be formed by identical electric conducting material.
40. the method for packing of LED encapsulation body as claimed in claim 37 is characterized in that: in the step that forms outside connection electric conductor unit, first and second electric conductors that this outside connects electric conductor partly are to be formed by different electric conducting materials.
41. the method for packing of a LED encapsulation body is characterized in that: comprise following step:
One primary LED chip is provided, this primary LED chip have a non-light that allows extraneous light to penetrate penetrate the surface, one with should non-light penetrate the relative light in surface penetrate surface, be arranged at this non-light penetrate the surface first electrode with one first polarity, and one be arranged at this non-light and penetrate and surperficial have one and second electrode of this first opposite polarity second polarity;
Form an electrode bonding conductor unit, this electrode bonding conductor unit comprise a non-light that is formed at this primary LED chip penetrate the surface this first electrode and near surf zone on the transparent conductive metal layer;
One secondary light-emitting diode chip for backlight unit is set on this conductive metal layer, this pair light-emitting diode chip for backlight unit have a first surface that this first electrode is installed and one be equipped with this second electrode and with this first surface opposing second surface, this pair light-emitting diode chip for backlight unit is to penetrate the surface and be arranged on the conductive metal layer of this primary LED chip towards the non-light of this primary LED chip with its second surface, so that second electrode that should the pair light-emitting diode chip for backlight unit is to be electrically connected with first electrode of this primary LED chip via this conductive metal layer;
Non-light in this primary LED chip penetrates the surperficial formation one opaque cover layer of going up covering by the pair light-emitting diode chip for backlight unit, this cover layer is formed with the perforate of first electrode of two second electrodes that are used to expose this primary LED chip and this pair light-emitting diode chip for backlight unit, and
In this tectal each perforate, form an outside electric conductor unit that connects, each is outside connect electric conductor unit comprise one in the perforate of this tectal correspondence with first electric conductor that is electrically connected by this corresponding perforate institute exposed electrodes partly and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor.
42. the method for packing of a LED encapsulation body is characterized in that: comprise following step:
Provide one can be energized the primary LED chip that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate relative and the non-light that allow extraneous light to penetrate in surface and penetrate surface, one and be installed on this non-light and penetrate lip-deep first electrode with one first polarity, reach one and be installed on lip-deep second electrode that has with this first opposite polarity second polarity of this non-light ejaculation;
Penetrate on the surface in the non-light of this light-emitting diode chip for backlight unit a secondary light-emitting diode chip for backlight unit is set, this pair light-emitting diode chip for backlight unit has first electrode that this first polarity arranged, and second electrode with this second polarity;
Form an electrode bonding conductor unit that is electrically connected that is used to set up between at least one electrode that has the polarity identical one of them electrode of this primary LED chip and this revers voltage protection component one with the polarity of this one of them electrode of this primary LED chip; And
Form at least two connection electric conductor unit, outside that are used for this first, second electrode is electrically connected to external circuit.
43. the method for packing of LED encapsulation body as claimed in claim 42 is characterized in that:
This provides the step of primary LED chip more to be contained in this non-light and penetrates the step that the surface forms an insulating barrier and form a protective layer on this insulating barrier; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole
In the step that this pair light-emitting diode chip for backlight unit is set; this pair light-emitting diode chip for backlight unit have a first surface and one be equipped with this first and second electrode and with this first surface opposing second surface; this step that revers voltage protection component is set more is contained in the step that this second surface forms an insulating barrier and form a protective layer on this insulating barrier; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this pair light-emitting diode chip for backlight unit; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole; this pair light-emitting diode chip for backlight unit is to penetrate the surface and be arranged on the protective layer of this primary LED chip towards the non-light of this primary LED chip with its second surface; the perforation of the protective layer of this primary LED chip perforation than the protective layer of this pair light-emitting diode chip for backlight unit dimensionally is big
In the step that forms electrode bonding conductor unit; This electrode bonding conductor unit comprises the interior conductor that is electrically connected with a corresponding electrode of exposed hole that several perforations that respectively are formed at a correspondence and the perforation corresponding with this be communicated with; So that first electrode of this primary LED chip is first electrode that is electrically connected to this pair light-emitting diode chip for backlight unit via the conductor of correspondence; And second electrode of this primary LED chip is second electrode that is electrically connected to this pair light-emitting diode chip for backlight unit via the conductor of correspondence
Before forming outside connection electric conductor unit; more be contained in and form an opaque tectal step on the protective layer of this primary LED chip; this cover layer covers this pair light-emitting diode chip for backlight unit and is formed with the perforate of the part of the conductor in the perforation of two correspondences that respectively are used to expose the protective layer that is formed on this primary LED chip, and
In forming the outside step that connects the electric conductor unit, each is outside connect electric conductor unit comprise first electric conductor that in the perforate of this tectal correspondence, is electrically connected with this part by this corresponding conductor that perforate exposed partly and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor.
44. the method for packing of LED encapsulation body as claimed in claim 42 is characterized in that:
In the step of secondary light-emitting diode chip for backlight unit is provided, this pair light-emitting diode chip for backlight unit have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface, this pair light-emitting diode chip for backlight unit is to penetrate the non-light that is arranged at this primary LED chip under the surface at its first surface towards the non-light of this primary LED chip to penetrate on the surface
After the step that this pair light-emitting diode chip for backlight unit is set; more comprise formation one insulating barrier and penetrate surperficial going up and the step of formation one protective layer on this insulating barrier in the non-light of this primary LED chip; this insulating barrier is formed with several exposed holes that is used to expose this primary LED chip and the corresponding electrode of this pair light-emitting diode; this protective layer is formed with two and respectively is communicated with two of this insulating barrier and exposes the perforation that the electrode of a correspondence of this primary LED chip and this pair light-emitting diode chip for backlight unit one has the electrode of the polarity identical with the polarity of this corresponding electrode of this primary LED chip respectively
In the step that forms electrode bonding conductor unit; this electrode bonding conductor unit comprises two conductors; each conductor comprises a first that can be electrically connected with this corresponding electrode of this primary LED chip in one of this insulating barrier exposes the exposed hole of electrode of a correspondence of this primary LED chip; the second portion that is electrically connected in the perforation of an exposed hole that in it, is formed with this first that is communicated with this insulating barrier at one of this protective layer and with this first; and in exposed hole that is communicated with this perforation that in it, is formed with this second portion at one of this insulating barrier can with this two electrode of this pair light-emitting diode chip for backlight unit and the third part that is electrically connected with this second portion
Form outside connect the electric conductor unit before, more be contained in and form an opaque tectal step on this protective layer, this cover layer is formed with the perforate of the second portion of two conductors that respectively are used to expose a correspondence, and
In forming the outside step that connects the electric conductor unit, each is outside to connect electric conductor unit and comprises first electric conductor part that can be electrically connected with the second portion by this corresponding conductor that perforate exposed and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor in the perforate of this tectal correspondence.
45. the method for packing of LED encapsulation body as claimed in claim 42 is characterized in that:
After the step that the primary LED chip is provided, the non-light that more is contained in this primary LED chip penetrates the surface and goes up the step that forms an insulating barrier, this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip, each exposed hole is bigger than the electrode of this primary LED chip dimensionally
In the step that forms electrode bonding conductor unit, this electrode bonding conductor unit comprises conductor in the exposed hole of two correspondences that are formed at this insulating barrier so that this conductor is to be electrically connected with the corresponding electrode of this primary LED chip,
In the step of secondary light-emitting diode chip for backlight unit is set, this pair light-emitting diode chip for backlight unit have a first surface and one be equipped with this first and second electrode and with this first surface opposing second surface, this pair light-emitting diode chip for backlight unit is to penetrate on the surface towards the non-light that the non-light of this primary LED chip penetrates the surface and is arranged at this primary LED chip with its second surface, so that being a conductor via this electrode bonding conductor unit, first electrode that should the pair light-emitting diode chip for backlight unit comes to be electrically connected with first electrode of this primary LED chip, and second electrode that should the pair light-emitting diode chip for backlight unit to be another conductor via this electrode bonding conductor unit to be electrically connected with second electrode of this primary LED chip
After the step that this pair light-emitting diode chip for backlight unit is set, more be contained on this insulating barrier and form an opaque tectal step, this cover layer is formed with the perforate of the part of two conductors that respectively are used to expose a correspondence, and
In forming the outside step that connects the electric conductor unit, each is outside connect electric conductor unit comprise first electric conductor that in the perforate of this tectal correspondence, is electrically connected with this part by this corresponding conductor that perforate exposed partly and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor.
46. the method for packing of LED encapsulation body as claimed in claim 42 is characterized in that:
After the step that the primary LED chip is provided, the non-light that more is contained in this primary LED chip penetrates the surface and goes up the step that forms an insulating barrier, this insulating barrier is formed with second exposed hole that first exposed hole of first electrode that is used to expose this primary LED chip and are used to expose second electrode of this primary LED chip, this first exposed hole is bigger than the electrode of this primary LED chip dimensionally
In the step that forms electrode bonding conductor unit, this electrode bonding conductor unit comprise one in first exposed hole that is formed at this insulating barrier conductor so that this conductor be with this primary LED chip first electrode be electrically connected,
In the step of secondary light-emitting diode chip for backlight unit is set, this pair light-emitting diode chip for backlight unit have a first surface that this first electrode is installed and one be equipped with this second electrode and with this first surface opposing second surface, this pair light-emitting diode chip for backlight unit is to penetrate on the surface towards the non-light that the non-light of this primary LED chip penetrates the surface and is arranged at this primary LED chip with its first surface, so that being conductor via this electrode bonding conductor unit, first electrode that should the pair light-emitting diode chip for backlight unit comes to be electrically connected with first electrode of this primary LED chip
After the step that this pair light-emitting diode chip for backlight unit is set; more be contained in and form the step that one first protective layer reaches a formation second protective layer on this first protective layer on this insulating barrier; this first protective layer is formed with three and is respectively applied for second electrode that exposes this pair light-emitting diode chip for backlight unit; second electrode of this primary LED chip; perforation with the part of this conductor; this second protective layer is formed with first perforation and one makes this first protective layer second through hole that other perforations are communicated with that this a part of perforation with the conductor of this electrode bonding conductor unit of exposure of this first protective layer is communicated with this part of the conductor that can expose this electrode bonding conductor unit
In the step that forms electrode bonding conductor unit; this electrode bonding conductor unit more comprises a conductor that is electrically connected with this part of this conductor in first perforation of the perforation of this first protective layer and this second protective layer; and the conductor that is electrically connected of second electrode of second electrode that in second perforation of these other perforations of this first protective layer and this second protective layer, makes this primary LED chip and this pair light-emitting diode chip for backlight unit
Before the step that forms outside connection electric conductor unit; more comprise one and on this second protective layer, form an opaque tectal step; this cover layer is formed with the perforate of the part of two conductors that are used to be exposed to the correspondence in this first and second perforation, and
In forming the outside step that connects the electric conductor unit, each is outside connect electric conductor unit comprise first electric conductor that in the perforate of this tectal correspondence, is electrically connected with this part by this corresponding conductor that perforate exposed partly and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor.
47. the method for packing of a LED encapsulation body is characterized in that: comprise following step:
Provide one can be energized the primary LED chip that emits beam, this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
On the non-light ejaculation surface of this light-emitting diode chip for backlight unit, a secondary light-emitting diode chip for backlight unit is set, this pair light-emitting diode chip for backlight unit has first and second electrode zones with the electrode alignment of this primary LED chip, this the first region territory has this first polarity and this second electrode region has this second polarity, and this first and second electrode zone respectively is formed with one and exposes the perforation that one of this primary LED chip has the electrode of the polarity identical with its polarity; And
Form at least two and be used for these electrodes are electrically connected to outside the external circuit and connect the electric conductor unit, each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with the corresponding electrode zone of the corresponding electrode of this primary LED chip and this pair light-emitting diode and one partly are electrically connected and the second electric conductor part of projection outside this corresponding perforation with this first electric conductor in the perforation of a correspondence.
48. a LED encapsulation body is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates the revers voltage protection component of lip-deep revers voltage protective device, and this revers voltage protection component has first electrode with this first polarity, and second electrode with this second polarity;
One be used to set up at least one one of them electrode of this primary LED chip and this revers voltage protection component one have and the electrode of the opposite polarity polarity of this one of them electrode of this primary LED chip between the electrode bonding conductor unit that is electrically connected; And at least two connection electric conductor unit, outside that are used for these electrodes are electrically connected to external circuit.
49. LED encapsulation body as claimed in claim 48 is characterized in that:
More be contained in the auxiliary conductive layer that is formed on each these electrode.
50. LED encapsulation body as claimed in claim 48 is characterized in that:
First and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface; this LED encapsulation body more comprises one and is formed at this non-light and penetrates lip-deep opaque insulating layer and an opaque protective layer that is formed on this insulating barrier; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole
This revers voltage protection component comprises a secondary light-emitting diode chip for backlight unit; its have a first surface and one be equipped with this first and second electrode and with this first surface opposing second surface; this LED encapsulation body more comprises the opaque insulating layer and the opaque protective layer that is formed on this insulating barrier that are formed on this second surface; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this pair light-emitting diode chip for backlight unit; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole; this pair light-emitting diode chip for backlight unit is to penetrate the surface and be arranged on the protective layer of this primary LED chip towards the non-light of this primary LED chip with its second surface; the perforation of the protective layer of this primary LED chip perforation than the protective layer of this pair light-emitting diode chip for backlight unit dimensionally is big
This electrode bonding conductor unit comprises the interior conductor that is electrically connected with a corresponding electrode of exposed hole that several perforations that respectively are formed at a correspondence and the perforation corresponding with this be communicated with, so that being conductor via correspondence, first electrode of this primary LED chip is electrically connected to second electrode of this pair light-emitting diode chip for backlight unit and second electrode of this primary LED chip is first electrode that is electrically connected to this pair light-emitting diode chip for backlight unit via the conductor of correspondence
This LED encapsulation body more comprises an opaque cover layer on the protective layer that is formed at this primary LED chip; this cover layer covers this pair light-emitting diode chip for backlight unit and is formed with the perforate of the part of the conductor in the perforation of two correspondences that respectively are used to expose the protective layer that is formed on this primary LED chip, and
Each is outside to connect electric conductor unit and comprises first conductor part that is electrically connected with this part by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
51. LED encapsulation body as claimed in claim 48 is characterized in that:
First and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface; this LED encapsulation body more comprises one and is formed at insulating barrier and protective layer that is formed on this insulating barrier that this non-light penetrates the surface; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole
This revers voltage protection component comprises a Zener diode chip for backlight unit; it is relative with this first surface with one and the second surface of this first and second electrode is installed that this Zener diode chip has a first surface; this LED encapsulation body more comprises the insulating barrier and the protective layer that is formed on this insulating barrier that are formed on this second surface; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this Zener diode chip; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole; this Zener diode chip is to penetrate the surface and be arranged on the protective layer of this primary LED chip towards the non-light of this primary LED chip with its second surface; the perforation of the protective layer of this primary LED chip perforation than the protective layer of this Zener diode chip dimensionally is big
This electrode bonding conductor unit comprises the interior conductor that is electrically connected with a corresponding electrode of exposed hole that several perforations that respectively are formed at a correspondence and the perforation corresponding with this be communicated with so that first electrode of this primary LED chip is second electrode that is electrically connected to this Zener diode chip via corresponding conductor, and second electrode of this primary LED chip is first electrode that is electrically connected to this Zener diode chip via the conductor of correspondence
This LED encapsulation body more comprises a cover layer on the protective layer that is formed at this primary LED chip; this cover layer covers this Zener diode chip and is formed with the perforate of the part of the conductor in the perforation of two correspondences that respectively are used to expose the protective layer that is formed on this primary LED chip, and
Each is outside to connect electric conductor unit and comprises first conductor part that can be electrically connected with this part by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
52. LED encapsulation body as claimed in claim 48 is characterized in that:
First and second electrodes of this primary LED chip are arranged on this non-light and penetrate on the surface,
This revers voltage protection component comprises a secondary light-emitting diode chip for backlight unit; its have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface; this pair light-emitting diode chip for backlight unit is to penetrate the non-light that is arranged at this primary LED chip under the surface at its first surface towards the non-light of this primary LED chip to penetrate on the surface
This LED encapsulation body more comprises a non-light that is formed at this primary LED chip and penetrates lip-deep opaque insulating layer and an opaque protective layer that is formed on this insulating barrier; This insulating barrier is formed with several for exposing the exposed hole of this primary LED chip with the corresponding electrode of this pair light emitting diode; This protective layer is formed with two and respectively is communicated with two of this insulating barrier and exposes respectively the electrode of a correspondence of this primary LED chip and this pair light-emitting diode chip for backlight unit one and have perforation with the electrode of the opposite polarity polarity of this corresponding electrode of this primary LED chip
This electrode bonding conductor unit comprises two conductors; each conductor comprises a first that is electrically connected with this corresponding electrode of this primary LED chip in one of this insulating barrier exposes the exposed hole of electrode of a correspondence of this primary LED chip; the second portion that is electrically connected in the perforation of an exposed hole that in it, is formed with this first that is communicated with this insulating barrier at one of this protective layer and with this first; and in exposed hole that is communicated with this perforation that in it, is formed with this second portion at one of this insulating barrier with this electrode of this pair light-emitting diode chip for backlight unit and the third part that is electrically connected with this second portion
This LED encapsulation body more comprises an opaque cover layer that is formed on this protective layer, and this cover layer is formed with the perforate of the second portion of two conductors that respectively are used to expose a correspondence, and
Each is outside to connect electric conductor unit and comprises first conductor part that is electrically connected with second portion by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
53. LED encapsulation body as claimed in claim 48 is characterized in that:
First and second electrodes of this primary LED chip are arranged on this non-light and penetrate on the surface,
This revers voltage protection component comprises a Zener diode chip for backlight unit; its have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface; this Zener diode chip is to penetrate the non-light that is arranged at this primary LED chip under the surface at its first surface towards the non-light of this primary LED chip to penetrate on the surface
This LED encapsulation body more comprises a non-light that is formed at this primary LED chip and penetrates lip-deep insulating barrier and a protective layer that is formed on this insulating barrier; this insulating barrier is formed with several exposed holes that is used to expose this primary LED chip and the corresponding electrode of this Zener diode; this protective layer is formed with two and respectively is communicated with two of this insulating barrier and exposes the electrode of a correspondence of this primary LED chip and this Zener diode chip one respectively and have perforation with the electrode of the opposite polarity polarity of this corresponding electrode of this primary LED chip
This electrode bonding conductor unit comprises two conductors; each conductor comprises a first that can be electrically connected with this corresponding electrode of this primary LED chip in one of this insulating barrier exposes the exposed hole of electrode of a correspondence of this primary LED chip; the second portion that is electrically connected in the perforation of an exposed hole that in it, is formed with this first that is communicated with this insulating barrier at one of this protective layer and with this first; and in exposed hole that is communicated with this perforation that in it, is formed with this second portion at one of this insulating barrier can with this electrode of this Zener diode chip and the third part that is electrically connected with this second portion
This LED encapsulation body more comprises a cover layer that is formed on this protective layer, and this cover layer is formed with the perforate of the second portion of two conductors that respectively are used to expose a correspondence, and
Each is outside to connect electric conductor unit and comprises first conductor part that can be electrically connected with the second portion by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
54. LED encapsulation body as claimed in claim 48 is characterized in that:
First and second electrodes of this primary LED chip are arranged on this non-light and penetrate on the surface,
This LED encapsulation body more comprises a non-light that is formed at this primary LED chip and penetrates lip-deep opaque insulating layer, this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip, each exposed hole is bigger than the electrode of this primary LED chip dimensionally
This electrode bonding conductor unit comprises conductor in the exposed hole of two correspondences that are formed at this insulating barrier so that these conductors are to be electrically connected with the corresponding electrode of this primary LED chip,
This revers voltage protection component comprises a secondary light-emitting diode chip for backlight unit; its have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface; this pair light-emitting diode chip for backlight unit is to penetrate that the non-light that is arranged at this primary LED chip under the surface penetrates on the surface so that first electrode that should the pair light-emitting diode chip for backlight unit is a conductor via this electrode bonding conductor unit to be electrically connected with second electrode of this primary LED chip at its second surface towards the non-light of this primary LED chip; and second electrode that should the pair light-emitting diode chip for backlight unit to be another conductor via this electrode bonding conductor unit to be electrically connected with first electrode of this primary LED chip
This LED encapsulation body more comprises an opaque cover layer that is formed on this insulating barrier, and this cover layer is formed with the perforate of the part of two conductors that respectively are used to expose a correspondence, and
Each is outside to connect electric conductor unit and comprises first conductor part that can be electrically connected with this part by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
55. LED encapsulation body as claimed in claim 48 is characterized in that:
First and second electrodes of this primary LED chip are arranged on this non-light and penetrate on the surface,
This LED encapsulation body more comprises the non-light in this primary LED chip and penetrates lip-deep insulating barrier, this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip, each exposed hole is bigger than the electrode of this primary LED chip dimensionally
This electrode bonding conductor unit comprises conductor in the exposed hole of two correspondences that are formed at this insulating barrier so that these conductors are to be electrically connected with the corresponding electrode of this primary LED chip,
This revers voltage protection component comprises a Zener diode chip for backlight unit; its have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface; this Zener diode chip is to penetrate that the non-light that is arranged at this primary LED chip under the surface penetrates on the surface so that first electrode of this Zener diode chip is a conductor via this electrode bonding conductor unit to be electrically connected with second electrode of this primary LED chip at its second surface towards the non-light of this primary LED chip; and second electrode of this Zener diode chip is to be electrically connected via next first electrode with this primary LED chip of another conductor of this electrode bonding conductor unit
This LED encapsulation body more comprises a cover layer that is formed on this insulating barrier, and this cover layer is formed with the perforate of the part of two conductors that respectively are used to expose a correspondence, and
Each is outside to connect electric conductor unit and comprises first conductor part that can be electrically connected with this part by this corresponding conductor that perforate exposed and one be electrically connected and second conductor part of projection outside this corresponding perforate with this first conductor part in the perforate of this tectal correspondence.
56. LED encapsulation body as claimed in claim 48 is characterized in that:
First and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface,
This LED encapsulation body more comprises a non-light that is formed at this primary LED chip and penetrates lip-deep opaque insulating layer, this insulating barrier is formed with second exposed hole that first exposed hole of first electrode that is used to expose this primary LED chip and are used to expose second electrode of this primary LED chip, this first exposed hole is bigger than the electrode of this primary LED chip dimensionally
This electrode bonding conductor unit comprise one in first exposed hole that is formed at this insulating barrier conductor so that this conductor be with this primary LED chip first electrode be electrically connected,
This revers voltage protecting component comprises a secondary light-emitting diode chip for backlight unit; It has a first surface that this first electrode is installed thereon and with one this second electrode and the second surface relative with this first surface is installed thereon; This pair light-emitting diode chip for backlight unit is to penetrate that the non-light that is arranged at this primary LED chip under the surface penetrates on the surface so that second electrode that should the pair light-emitting diode chip for backlight unit is conductor via this electrode bonding conductor unit to be electrically connected with first electrode of this primary LED chip at its second surface towards the non-light of this primary LED chip
This LED encapsulation body more comprises opaque first protective layer and opaque second protective layer that is formed on this first protective layer that are formed on this insulating barrier; this first protective layer is formed with three and is respectively applied for first electrode that exposes this pair light-emitting diode chip for backlight unit; second electrode of this primary LED chip; perforation with the part of this conductor; this second protective layer is formed with first perforation and one makes this first protective layer second through hole that other perforations are communicated with that this a part of perforation with the conductor of this electrode bonding conductor unit of exposure of this first protective layer is communicated with this part of the conductor that can expose this electrode bonding conductor unit
This electrode bonding conductor unit more comprises a conductor that can be electrically connected with this part of this conductor in first perforation of the perforation of this first protective layer and this second protective layer; and the conductor that is electrically connected of first electrode of second electrode that in second perforation of these other perforations of this first protective layer and this second protective layer, can make this primary LED chip and this pair light-emitting diode chip for backlight unit
This LED encapsulation body more comprises an opaque cover layer that is formed on this second protective layer, and this cover layer is formed with the perforate of the part of two conductors that are used to be exposed to the correspondence in this first and second perforation, and
Each is outside to connect electric conductor unit and comprises first electric conductor part that can be electrically connected with this part by this corresponding conductor that perforate exposed and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor in the perforate of this tectal correspondence.
57. LED encapsulation body as claimed in claim 48 is characterized in that:
First and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface,
This LED encapsulation body more comprises a non-light that is formed at this primary LED chip and penetrates lip-deep opaque insulating layer, this insulating barrier is formed with second exposed hole that first exposed hole of first electrode that is used to expose this primary LED chip and are used to expose second electrode of this primary LED chip, this first exposed hole is bigger than the electrode of this primary LED chip dimensionally
This electrode bonding conductor unit comprise one in first exposed hole that is formed at this insulating barrier conductor so that this conductor be with this primary LED chip first electrode be electrically connected,
This revers voltage protection component comprises a Zener diode chip for backlight unit; its have a first surface that this first electrode is installed thereon and one be equipped with thereon this second electrode and with this first surface opposing second surface; this Zener diode chip is to penetrate that the non-light that is arranged at this primary LED chip under the surface penetrates on the surface so that second electrode of this Zener diode chip is a conductor via this electrode bonding conductor unit to be electrically connected with first electrode of this primary LED chip at its second surface towards the non-light of this primary LED chip
This LED encapsulation body more comprises opaque first protective layer and opaque second protective layer that is formed on this first protective layer that are formed on this insulating barrier; this first protective layer is formed with three and is respectively applied for first electrode that exposes this Zener diode chip; second electrode of this primary LED chip; perforation with the part of this conductor; this second protective layer is formed with first perforation and one makes this first protective layer second through hole that other perforations are communicated with that this a part of perforation with the conductor of this electrode bonding conductor unit of exposure of this first protective layer is communicated with this part of the conductor that can expose this electrode bonding conductor unit
This electrode bonding conductor unit more comprises a conductor that can be electrically connected with this part of this conductor in first perforation of the perforation of this first protective layer and this second protective layer; and the conductor that is electrically connected of first electrode of second electrode that in second perforation of these other perforations of this first protective layer and this second protective layer, can make this primary LED chip and this Zener diode chip
This LED encapsulation body more comprises an opaque cover layer that is formed on this second protective layer, and this cover layer is formed with the perforate of the part of two conductors that are used to be exposed to the correspondence in this first and second perforation, and
Each is outside to connect electric conductor unit and comprises first electric conductor part that can be electrically connected with this part by this corresponding conductor that perforate exposed and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor in the perforate of this tectal correspondence.
58. a LED encapsulation body is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates the revers voltage protection component of lip-deep revers voltage protective device, this revers voltage protection component has first and second electrode zones with the electrode alignment of this primary LED chip, this the first region territory has this first polarity and this second electrode region has this second polarity, and these electrode zones respectively are formed with one and expose one of this primary LED chip and have and its perforation of electrode of opposite polarity polarity; And
At least two are used for these electrodes are electrically connected to connection electric conductor unit outside the external circuit.
59. LED encapsulation body as claimed in claim 58 is characterized in that:
First and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface,
This revers voltage protection component is a secondary light-emitting diode chip for backlight unit, and
Each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with the corresponding electrode zone of the corresponding electrode of this primary LED chip and this pair light-emitting diode and one partly are electrically connected and the second electric conductor part of projection outside this corresponding perforation with this first electric conductor in the perforation of a correspondence.
60. LED encapsulation body as claimed in claim 58 is characterized in that:
First and second electrodes of this primary LED chip are to be arranged at this non-light to penetrate on the surface,
This revers voltage protection component is a Zener diode chip for backlight unit, and
Each is outside to connect electric conductor unit comprise that first electric conductor part that can be electrically connected with the corresponding electrode zone of the corresponding electrode of this primary LED chip and this Zener diode and one partly are electrically connected and the second electric conductor part of projection outside this corresponding perforation with this first electric conductor in the perforation of a correspondence.
61. a LED encapsulation body is characterized in that: comprise:
One can be energized the light-emitting diode chip for backlight unit that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach one and be installed on identical lip-deep second electrode that has with this first opposite polarity second polarity with this first electrode;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates the revers voltage protection component of lip-deep revers voltage protective device, this revers voltage protection component is a capacitor, and this capacitor has near two electrodes with reciprocal polarity the electrode in two electrodes that respectively extend to this light-emitting diode chip for backlight unit;
An insulating barrier that is formed on this electrode of light emitting diode installation surface, this insulating barrier are to come by near the perforation of the electrode fixed this corresponding electrode that extends in light-emitting diode chip for backlight unit that can form two corresponding electrodes that are used to expose this light-emitting diode chip for backlight unit and this revers voltage protection component with pattern by exposure and development treatment;
An electrode bonding conductor unit, this electrode bonding conductor unit comprise two each conductors that the electrode of this electrode of light emitting diode that this perforation by this insulating barrier exposed and this revers voltage protection component is electrically connected;
A lip-deep cover layer that is formed at this insulating barrier, this cover layer are formed with the exposed hole of a part of the conductor of two correspondences that are used to expose this electrode bonding conductor unit; And
At least two outside electric conductor unit that connect, each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with this part of corresponding conductor and one partly are electrically connected and the second electric conductor part of projection outside this exposed hole with this first electric conductor in the exposed hole of a correspondence.
62. a LED encapsulation body is characterized in that: comprise:
One primary LED chip, this primary LED chip have a non-light that allows extraneous light to penetrate penetrate the surface, one with should non-light penetrate the relative light in surface penetrate surface, be arranged at this non-light penetrate the surface first electrode with one first polarity, and one be arranged at this non-light and penetrate and surperficial have one and second electrode of this first opposite polarity second polarity;
An electrode bonding conductor unit, this electrode bonding conductor unit comprise a non-light that is formed at this primary LED chip penetrate the surface this first electrode and near surf zone on the transparent conductive metal layer;
A secondary light-emitting diode chip for backlight unit that is arranged on this conductive metal layer, this pair light-emitting diode chip for backlight unit have a first surface that this first electrode is installed and one be equipped with this second electrode and with this first surface opposing second surface, this pair light-emitting diode chip for backlight unit is to penetrate the surface and be arranged on the conductive metal layer of this primary LED chip so that second electrode that should the pair light-emitting diode chip for backlight unit is to be electrically connected with first electrode of this primary LED chip via this conductive metal layer towards the non-light of this primary LED chip with its second surface;
A non-light that is formed at this primary LED chip penetrates lip-deep opaque cover layer so that should be capped by the pair light-emitting diode chip for backlight unit, this cover layer is formed with the perforate of first electrode of two second electrodes that are used to expose this primary LED chip and this pair light-emitting diode chip for backlight unit, and
Connect the electric conductor unit outside being formed in this tectal each perforate, each is outside to connect electric conductor unit and comprises one and can partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor with first electric conductor part that is electrically connected by this corresponding perforate institute exposed electrodes and one in the perforate of this tectal correspondence.
63. a LED encapsulation body is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate relative and the non-light that allow extraneous light to penetrate in surface and penetrate surface, one and be installed on this non-light and penetrate lip-deep first electrode with one first polarity, reach one and be installed on lip-deep second electrode that has with this first opposite polarity second polarity of this non-light ejaculation;
A non-light that is arranged at this light-emitting diode chip for backlight unit penetrates lip-deep secondary light-emitting diode chip for backlight unit, and this pair light-emitting diode chip for backlight unit has first electrode that this first polarity arranged, and second electrode with this second polarity;
An electrode bonding conductor unit that is electrically connected that is used to set up between at least one electrode that has the polarity identical one of them electrode of this primary LED chip and this revers voltage protection component one with the polarity of this one of them electrode of this primary LED chip; Reaching at least two is used for these electrodes are electrically connected to connection electric conductor unit outside the external circuit.
64., it is characterized in that as the described LED encapsulation body of claim 63:
This LED encapsulation body more comprises one and is formed at this non-light and penetrates lip-deep insulating barrier and a protective layer that is formed on this insulating barrier; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole
This pair light-emitting diode chip for backlight unit have a first surface and one be equipped with this first and second electrode and with this first surface opposing second surface; this LED encapsulation body more comprises the insulating barrier and the protective layer that is formed on this insulating barrier that are formed on this second surface; this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this pair light-emitting diode chip for backlight unit; this protective layer is formed with two and is communicated with and bigger dimensionally perforation with corresponding exposed hole; this pair light-emitting diode chip for backlight unit is to penetrate under the surface towards the non-light of this primary LED chip at its second surface to be arranged on the protective layer of this primary LED chip; the perforation of the protective layer of this primary LED chip perforation than the protective layer of this pair light-emitting diode chip for backlight unit dimensionally is big
This electrode bonding conductor unit comprises the interior conductor that is electrically connected with a corresponding electrode of exposed hole that several perforations that respectively are formed at a correspondence and the perforation corresponding with this be communicated with so that first electrode of this primary LED chip is to be electrically connected to first electrode of this pair light-emitting diode chip for backlight unit and second electrode of this primary LED chip is second electrode that is electrically connected to this pair light-emitting diode chip for backlight unit via corresponding conductor via corresponding conductor
This LED encapsulation body more comprises an opaque cover layer on the protective layer that is formed at this primary LED chip; this cover layer covers this pair light-emitting diode chip for backlight unit and is formed with the perforate of the part of the conductor in the perforation of two correspondences that respectively are used to expose the protective layer that is formed on this primary LED chip, and
Each is outside to connect electric conductor unit and comprises first electric conductor part that can be electrically connected with this part by this corresponding conductor that perforate exposed and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor in the perforate of this tectal correspondence.
65., it is characterized in that as the described LED encapsulation body of claim 63:
This pair light-emitting diode chip for backlight unit have a first surface and one be equipped with thereon this first and second electrode and with this first surface opposing second surface, this pair light-emitting diode chip for backlight unit is to penetrate the non-light that is arranged at this primary LED chip under the surface at its first surface towards the non-light of this primary LED chip to penetrate on the surface
This LED encapsulation body more comprises a non-light that is formed at this primary LED chip and penetrates lip-deep insulating barrier and a protective layer that is formed on this insulating barrier; This insulating barrier is formed with several for exposing the exposed hole of this primary LED chip with the corresponding electrode of this pair light emitting diode; This protective layer is formed with two and respectively is communicated with two of this insulating barrier and exposes respectively the perforation that the electrode of a correspondence of this primary LED chip and this pair light-emitting diode chip for backlight unit one has the electrode of the polarity identical with the polarity of this corresponding electrode of this primary LED chip
This electrode bonding conductor unit comprises two conductors; each conductor comprises a first that is electrically connected with this corresponding electrode of this primary LED chip in one of this insulating barrier exposes the exposed hole of electrode of a correspondence of this primary LED chip; the second portion that is electrically connected in the perforation of an exposed hole that in it, is formed with this first that is communicated with this insulating barrier at one of this protective layer and with this first; and in exposed hole that is communicated with this perforation that in it, is formed with this second portion at one of this insulating barrier with this two electrode of this pair light-emitting diode chip for backlight unit and the third part that is electrically connected with this second portion
This LED encapsulation body more is contained on this protective layer and forms an opaque tectal step, and this cover layer is formed with the perforate of the second portion of two conductors that respectively are used to expose a correspondence, and
Each is outside to connect electric conductor unit and comprises first electric conductor part that can be electrically connected with the second portion by this corresponding conductor that perforate exposed and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor in the perforate of this tectal correspondence.
66., it is characterized in that as the described LED encapsulation body of claim 63:
This LED encapsulation body more comprises a non-light that is formed at this primary LED chip and penetrates lip-deep insulating barrier, this insulating barrier is formed with the exposed hole of the electrode of two correspondences that are used to expose this primary LED chip, each exposed hole is bigger than the electrode of this primary LED chip dimensionally
This electrode bonding conductor unit comprises conductor in the exposed hole of two correspondences that are formed at this insulating barrier so that these conductors are to be electrically connected with the corresponding electrode of this primary LED chip,
This pair light-emitting diode chip for backlight unit has a first surface and with one this first and second electrode and the second surface relative with this first surface is installed; This pair light-emitting diode chip for backlight unit be with its second surface towards the non-light of this primary LED chip penetrate the surface and the non-light that is arranged at this primary LED chip to penetrate upper so that first electrode that should the pair light-emitting diode chip for backlight unit in surface be that a conductor via this electrode bonding conductor unit comes to be electrically connected with first electrode of this primary LED chip; And second electrode that should the pair light-emitting diode chip for backlight unit to be another conductor via this electrode bonding conductor unit to be electrically connected with second electrode of this primary LED chip
This LED encapsulation body more comprises an opaque cover layer that is formed on this insulating barrier, and this cover layer is formed with the perforate of the part of two conductors that respectively are used to expose a correspondence, and
Each is outside to connect electric conductor unit and comprises first electric conductor part that can be electrically connected with this part by this corresponding conductor that perforate exposed and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor in the perforate of this tectal correspondence.
67., it is characterized in that as the described LED encapsulation body of claim 63:
This LED encapsulation body more comprises a non-light that is formed at this primary LED chip and penetrates lip-deep insulating barrier, this insulating barrier is formed with second exposed hole that first exposed hole of first electrode that is used to expose this primary LED chip and are used to expose second electrode of this primary LED chip, this first exposed hole is bigger than the electrode of this primary LED chip dimensionally
This electrode bonding conductor unit comprise one in first exposed hole that is formed at this insulating barrier conductor so that this conductor be with this primary LED chip first electrode be electrically connected,
This pair light-emitting diode chip for backlight unit has a first surface that this first electrode is installed thereon and with one this second electrode and the second surface relative with this first surface is installed; This pair light-emitting diode chip for backlight unit is to penetrate on the surface towards the non-light that the non-light of this primary LED chip penetrates the surface and is arranged at this primary LED chip with its first surface; So that being conductor via this electrode bonding conductor unit, first electrode that should the pair light-emitting diode chip for backlight unit comes to be electrically connected with first electrode of this primary LED chip
This LED encapsulation body more comprises first protective layer and second protective layer that is formed on this first protective layer that are formed on this insulating barrier; this first protective layer is formed with three and is respectively applied for second electrode that exposes this pair light-emitting diode chip for backlight unit; second electrode of this primary LED chip; perforation with the part of this conductor; this second protective layer is formed with first perforation and one makes this first protective layer second through hole that other perforations are communicated with that this a part of perforation with the conductor of this electrode bonding conductor unit of exposure of this first protective layer is communicated with this part of the conductor that can expose this electrode bonding conductor unit
This electrode bonding conductor unit more comprises a conductor that is electrically connected with this part of this conductor in first perforation of the perforation of this first protective layer and this second protective layer; and the conductor that is electrically connected of second electrode of second electrode that in second perforation of these other perforations of this first protective layer and this second protective layer, makes this primary LED chip and this pair light-emitting diode chip for backlight unit
This LED encapsulation body more comprises an opaque cover layer that is formed on this second protective layer, and this cover layer is formed with the perforate of the part of two conductors that are used to be exposed to the correspondence in this first and second perforation, and
Each is outside connect electric conductor unit comprise first electric conductor that in the perforate of this tectal correspondence, is electrically connected with this part by this corresponding conductor that perforate exposed partly and one partly be electrically connected and the second electric conductor part of projection outside this corresponding perforate with this first electric conductor.
68. a LED encapsulation body is characterized in that: comprise:
One can be energized the primary LED chip that emits beam, and this light-emitting diode chip for backlight unit has light and penetrates surface, one and this light and penetrate the relative non-light in surface and penetrate surface, one and be installed on lip-deep first electrode with one first polarity in this two surface, reach lip-deep second electrode that has with this first opposite polarity second polarity that is installed in this two surface;
A non-light that is arranged at this primary LED chip penetrates lip-deep secondary light-emitting diode chip for backlight unit, this pair light-emitting diode chip for backlight unit has first and second electrode zones with the electrode alignment of this primary LED chip, this the first region territory has this first polarity and this second electrode region has this second polarity, and these electrode zones respectively are formed with one and expose the perforation that one of this primary LED chip has the electrode of the polarity identical with its polarity; And
At least two are used for these electrodes are electrically connected to outside the external circuit and connect the electric conductor unit, and each is outside to connect electric conductor unit comprise that first electric conductor part that is electrically connected with the corresponding electrode zone of the corresponding electrode of this primary LED chip and this pair light-emitting diode and one partly are electrically connected and the second electric conductor part of projection outside this corresponding perforation with this first electric conductor in the perforation of a correspondence.
CNB2005100739546A 2005-05-19 2005-05-19 LED chip package and packaging method thereof Expired - Fee Related CN100426539C (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237352A (en) * 2010-05-04 2011-11-09 旭丽电子(广州)有限公司 Light-emitting diode module and light-emitting diode lamp
CN104851962A (en) * 2014-02-13 2015-08-19 日亚化学工业株式会社 Light emitting device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1215530A (en) * 1996-03-29 1999-04-28 英国电讯有限公司 Call routing selection
JP2001059923A (en) * 1999-06-16 2001-03-06 Seiko Epson Corp Optical module, production thereof, semiconductor device and light transmission device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237352A (en) * 2010-05-04 2011-11-09 旭丽电子(广州)有限公司 Light-emitting diode module and light-emitting diode lamp
CN102237352B (en) * 2010-05-04 2013-05-22 旭丽电子(广州)有限公司 Light-emitting diode module and light-emitting diode lamp
CN104851962A (en) * 2014-02-13 2015-08-19 日亚化学工业株式会社 Light emitting device

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