CN1865900A - Method for preparing film sample for use in transmitted electron microscope - Google Patents
Method for preparing film sample for use in transmitted electron microscope Download PDFInfo
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- CN1865900A CN1865900A CNA200610012016XA CN200610012016A CN1865900A CN 1865900 A CN1865900 A CN 1865900A CN A200610012016X A CNA200610012016X A CN A200610012016XA CN 200610012016 A CN200610012016 A CN 200610012016A CN 1865900 A CN1865900 A CN 1865900A
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Abstract
The disclosed preparation method for film material as TEM sample comprises: preparing sheet-form NaCl wafer and then the sample film on wafer; fixing the wafer on a tray to coat the precursor solution made by Sol-Gel method on the wafer and prepare 5-200nm film; taking annealing process in thermal treatment furnace, putting sample on copper grating to dip into distilled water, and obtaining the final product. This invention overcomes defect in prior art, and has wide application with low cost.
Description
Technical field
The invention belongs to the preparing electron microscopy specimen technical field, a kind of preparation method of sample for use in transmitted electron microscope of membraneous material is provided especially, be applicable to the various films of thickness between 5～200nm of Prepared by Sol Gel Method.
Background technology
Transmission electron microscope is one of the important instrument of the micromechanism of research nano material, but during with transmission electron microscope research material micromechanism, sample must be the film of the transmission electron microscope electron beam nano thickness that can penetrate, and the quality of the micro-image that obtains of transmission electron microscope depends on sample thickness strongly, so sample observation position requires very thin.The ability that electron beam penetrates solid sample mainly depends on the material atom ordinal number with accelerating potential and sample.In general, accelerating potential is high more, and the sample atoms ordinal number is low more, and it is just big more that electron beam can penetrate sample thickness, and the thickness of 5～200nm generally can only be arranged, and this brings very big difficulty for transmission electron microscope sample preparation work.At present, transmission electron microscope observing can obtain by two kinds of methods with sample, and the one, surface replica technology, the 2nd, sample thinning technique.The surface replica technology is exactly that the microstructure embossment of metallographic sample surface through producing after the etch copied on a kind of very thin film, then duplicating film is put into and removes observation analysis in the transmission electron microscope, this method can only be duplicated the sample surfaces pattern, can not disclose crystals institutional framework information.The sample thinning technique can observation sample inner structure and crystal defect, and can spread out lining imaging and electron diffraction investigation connect pattern information in structural information.Sample thinning technique commonly used comprises mechanical reduction, ion beam attenuate, chemical reduction and electropolishing attenuate.In preceding two kinds of thinning processes, at first the edge chamfer phenomenon appears in sample easily in the rubbing down process, when serious even can make that sample is cracked to be fallen, can cause sample to be subjected to pollution in various degree simultaneously and in the mechanical reduction process, introduce illusion easily, can not observe the real structure of sample; In back two kinds of thinning processes, pollution problem is difficult to avoid equally.For also not having effective solution in these problem document records, depend on experience largely at present.
Summary of the invention:
The objective of the invention is to: a kind of preparation method of sample for use in transmitted electron microscope of membraneous material is provided, solved transmission electron microscope observing with film sample in the traditional mechanical thinning process, polluted easily, broken and introduce the problem of illusion.Simplified the preparation process of thin film transmission electron microscope sample greatly.
Technical scheme of the present invention:
1, the NaCl crystal wafer of preparation sheet.The NaCl powder is put into behind the little porcelain boat to high temperature furnace, be warmed up to 1000～1100 ℃, with the stove cooling, obtain block NaCl crystal behind insulation 5～300min.Then block NaCl crystal being cut into thickness is that 0.2～5mm, area are 20～50mm
2Thin slice.
2, on the NaCl crystal substrates, prepare sample thin film with sol evenning machine.The NaCl crystal wafer that step (1) is obtained is fixed on the pallet of sol evenning machine, is coated in uniformly on the NaCl crystal wafer with the method for the whirl coating precursor solution with the configuration of Sol-Gel method, makes the sample film of thickness at 5～200nm.
3, in heat-treatment furnace, carry out annealing in process by the Technology for Heating Processing of preparation film sample.
4, the film sample that obtains is placed on the copper grid to distilled water, soaks, guarantee to make thin film adsorbs on the copper grid after the NaCl crystal dissolves fully, just obtain the transmission electron microscope observing sample.
The invention has the advantages that: a kind of preparation method of very simple used in transmission electron microscope sample is provided, solved the used in transmission electron microscope film sample in the traditional mechanical thinning process, polluted easily, broken and introduce the problem of illusion.This technology is fit to the transmission electron microscope sample of the various film samples of preparation sol-gel process preparation, its important feature is not need the complicated sample thinning technique directly to carry out transmission electron microscope observing, do not damage the original structure of sample, do not have to pollute and introduce the problem of illusion; And cost is low, uses very extensive.
Description of drawings
Fig. 1 is the Ag/SiO with the preparation of Sol-Gel method
2The transmission electron microscope microstructure photograph of laminated film.
Embodiment
The NaCl crystal wafer is fixed on the pallet of sol evenning machine, with the syringe of 1ml with the Ag/SiO for preparing
2Precursor solution slowly drips on the NaCl crystal substrates.Turn round after 10 seconds with 600rpm, 2500rpm turned round for 30 seconds again.Sample is put in the rapid heat-treatment furnace at 600 ℃ of 30min that anneal down.There is one of film to face down the film sample for preparing and is placed on the copper grid, be immersed in the distilled water and guarantee to make thin film adsorbs on the copper grid after the NaCl crystal dissolves fully, just obtain the transmission electron microscope observing sample.Fig. 1 is the Ag/SiO with the preparation of Sol-Gel method
2The transmission electron microscope microstructure photograph of laminated film.
Table 1 has provided several preferred embodiments of the present invention:
The preferred invention example table of table 1
| Film | The heat treatment temperature of NaCl/℃ | Heat treatment time/min of NaCl | The film heat treatment temperature/℃ | Film heat treatment time/min | Film thickness/nm |
| (Li，Ti，Si)/NiO | 900 | 5 | 200 | 5 | 5 |
| (Ag，Au，Cu)/NiO | 1000 | 100 | 300 | 100 | 50 |
| (SnO 2，WO 3)/ZnO | 1100 | 150 | 400 | 150 | 100 |
| PbZrTiO 3 | 1150 | 200 | 500 | 200 | 150 |
| (K，Na，Li)NbO 3 | 1200 | 300 | 600 | 300 | 200 |
Claims (1)
1, a kind of preparation method of sample for use in transmitted electron microscope of membraneous material is characterized in that:
The NaCl crystal wafer of a, preparation sheet: the NaCl powder is put into behind the little porcelain boat to high temperature furnace, be warmed up to 900～1200 ℃, with the stove cooling, obtain block NaCl crystal behind insulation 5～300min; Then block NaCl crystal being cut into thickness is that 0.2～5mm, area are 20～50mm
2Thin slice;
B, on the NaCl crystal substrates, prepare sample thin film with sol evenning machine, the NaCl crystal wafer that step a is obtained is fixed on the pallet of sol evenning machine, method with whirl coating is coated in the precursor solution that the Sol-Gel method disposes on the NaCl crystal wafer uniformly, makes the sample thin film of thickness at 5～200nm;
C, in heat-treatment furnace by the preparation film sample Technology for Heating Processing carry out annealing in process, 200～600 ℃ of annealing temperatures, temperature retention time 5～300min;
D, the film sample that obtains is placed on the copper grid to distilled water, soaks, guarantee to make thin film adsorbs on the copper grid after the NaCl crystal dissolves fully, obtain the transmission electron microscope observing sample, be applicable to the various films of thickness between 5～200nm of Prepared by Sol Gel Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610012016XA CN100390524C (en) | 2006-05-26 | 2006-05-26 | Method for preparing film sample for use in transmitted electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610012016XA CN100390524C (en) | 2006-05-26 | 2006-05-26 | Method for preparing film sample for use in transmitted electron microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1865900A true CN1865900A (en) | 2006-11-22 |
| CN100390524C CN100390524C (en) | 2008-05-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200610012016XA Expired - Fee Related CN100390524C (en) | 2006-05-26 | 2006-05-26 | Method for preparing film sample for use in transmitted electron microscope |
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| CN (1) | CN100390524C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102304748A (en) * | 2011-09-14 | 2012-01-04 | 哈尔滨工业大学 | Preparation method of transmission electron microscope film sample through rapidly solidifying aluminum alloy powder |
| CN103691962A (en) * | 2013-12-20 | 2014-04-02 | 中山大学 | Preparation method of size-controllable metal nano particles |
| CN106872344A (en) * | 2017-02-27 | 2017-06-20 | 北京科技大学 | The method for quick of combined material chip Sensitivity of Stress Corrosion |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08136421A (en) * | 1994-11-02 | 1996-05-31 | Kawasaki Steel Corp | Film sample preparing method for analysis |
| US5990478A (en) * | 1997-07-10 | 1999-11-23 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method for preparing thin specimens consisting of domains of different materials |
| CN1095077C (en) * | 1998-09-29 | 2002-11-27 | 华南理工大学 | Method of preparing magnetic liquid electron microscopic sample |
| CN1223696C (en) * | 2002-06-07 | 2005-10-19 | 清华大学 | A solid electrolyte crystal material and process for preparing crystal film |
| CN1191465C (en) * | 2002-06-07 | 2005-03-02 | 清华大学 | Process of transmission electron microscope specimen preparation for easy damp-affecting denaturization crystal thin film |
| JP3842702B2 (en) * | 2002-07-26 | 2006-11-08 | エスアイアイ・ナノテクノロジー株式会社 | Observation sample preparation method |
| CN100360708C (en) * | 2004-05-12 | 2008-01-09 | 中国科学院金属研究所 | Method for preparing film specimen in use for transmission electron microscope |
-
2006
- 2006-05-26 CN CNB200610012016XA patent/CN100390524C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102304748A (en) * | 2011-09-14 | 2012-01-04 | 哈尔滨工业大学 | Preparation method of transmission electron microscope film sample through rapidly solidifying aluminum alloy powder |
| CN102304748B (en) * | 2011-09-14 | 2013-11-06 | 哈尔滨工业大学 | Preparation method of transmission electron microscope film sample through rapidly solidifying aluminum alloy powder |
| CN103691962A (en) * | 2013-12-20 | 2014-04-02 | 中山大学 | Preparation method of size-controllable metal nano particles |
| CN103691962B (en) * | 2013-12-20 | 2016-06-01 | 中山大学 | The preparation method of the metal nanoparticle that a kind of size is controlled |
| CN106872344A (en) * | 2017-02-27 | 2017-06-20 | 北京科技大学 | The method for quick of combined material chip Sensitivity of Stress Corrosion |
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| CN100390524C (en) | 2008-05-28 |
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