CN1862716A - Method for making overvoltage inhibitor material and overvoltage inhibitor thereof - Google Patents
Method for making overvoltage inhibitor material and overvoltage inhibitor thereof Download PDFInfo
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- CN1862716A CN1862716A CN 200510069373 CN200510069373A CN1862716A CN 1862716 A CN1862716 A CN 1862716A CN 200510069373 CN200510069373 CN 200510069373 CN 200510069373 A CN200510069373 A CN 200510069373A CN 1862716 A CN1862716 A CN 1862716A
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- conductor
- voltage suppressor
- porous structure
- excess voltage
- overvoltage
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Abstract
This invention relates to over voltage suppressor material, structure and manufacturing method. The material is one or more than one nonconductor particle powder or nonconductor substance, they are fully mixed and pretreated to form continuous holes multi-holes structure material. The characteristic of the suppressor is that the multi-hole structure is set between the two conductor electrodes. It has fast reaction speed, low leakage current, low electric capacity, easy fabrication and high stability.
Description
Technical field
The present invention is about a kind of manufacture method and excess voltage suppressor thereof of overvoltage inhibitor material.
Background technology
Along with the demand of the miniaturization and of various electronic product, multi-functional and portable, the density that its internal wiring is made also improves thereupon day by day, to promote the circuit function of unit volume.Yet; because the width and the spacing of circuit are constantly dwindled; and integrated circuit (IC) chip design is towards the trend development of fine rule road, high density and high-speed transfer; add under the actual demand backgrounds such as electromagnetic interference (EMI), Electromagnetic Compatibility; to belong to element and other passive device modularization of overvoltage inhibition or discharge prevention characteristic, or be integrated in the development trend that also is inevitable in the IC base plate for packaging.
Commercial at present excess voltage suppressor structure, be that a kind of variable impedance composition is designed in component structure, see through variable impedance composition signal conductive electrode (signal electrode) and ground connection conductive electrode (ground electrode) are electrically connected.When excess voltage suppressor was in the scope of normal working voltage, variable impedance composition was to be in high impedance status, and at this moment, voltage on the signal conductive electrode and electric current can not be imported into the ground connection conductive electrode.Just, when unusual overvoltage surging occurring on the signal conductive electrode, utilize the characteristic of variable impedance composition can be transformed into low impedance state, at this moment, the surging energy can be imported the ground connection conductive electrode and enter earth terminal (ground) through variable impedance composition by the signal conductive electrode.Therefore, by the characteristic of variable impedance composition, the voltage on the signal conductive electrode can be maintained in the scope that can not damage circuit, and then reach the purpose of protective circuit.
Known excess voltage suppressor is the zinc oxide ceramics rheostat, the ceramic material of this element and structure are based on zinc oxide, the oxide or the compound that add metals such as Bi, Sb, Co, Mn, Cr, Ni, B, Al or rare earth element constitute, and are a kind of very common excess voltage suppressor commodity.Just, because this zinc oxide varistor ceramic component material itself just has high dielectric property, so also belong to a kind of capacitor from another angle zinc oxide ceramics rheostat.
At upper frequency generally speaking, utilization zinc oxide ceramics rheostat suppresses superpotential electronic circuit, and the electric capacity that signal is had because of the zinc oxide ceramics rheostat takes place in regular meeting, and the generation signal is out of shape and can't uses.Add, flourish along with high frequency wireless telecommunications in recent years and wideband communication, make this zinc oxide ceramics rheostat have higher capacitive character, this more shows and is used on the high-frequency circuit is a significant drawback.
For addressing the above problem; United States Patent (USP) the 5th; 068; No. 634 another kind of material is proposed; its material structure is that conductive particle evenly is blended in cohering in the matrix of insulating properties; the thickness of this insulating barrier will be controlled in 25～350 atoms footpath; its collapse mechanism is to utilize to be separated with an extremely thin insulating barrier in two conductors under a voltage; having quantum when overtension wears the tunnel phenomenon and collapses; but the processing procedure of controlling thickness of insulating layer is quite difficult, when insulating barrier is too thin, easily causes this voltage suppressor element short circuit; opposite when insulating barrier too thick, can improve breakdown voltage again.
Before delivered the material of excess voltage suppressor, and disclosed by many pieces of United States Patent (USP)s, its patent No. is as follows: 3,685,026,3,685,0283,4,726,991,4,977,357,5,260848,5,294,374,5,393,596,5,807,509.These all utilize various conductive powder bodies or semiconduction powder with non-conductive powder and bond is full and uniform mixes.Basically the material structure of these formation all is with an extremely thin insulator coated with conductive powder or the assembly of semiconduction powder, and the high resistance low leakage characteristic is arranged when reaching low-voltage, and its extremely thin insulator can collapse under certain voltage, but will be influenced the breakdown voltage of element by the thickness of coating, Gu the uniformity of this coating thickness is very important.
Taiwan the 469188th publication number patent then proposes a kind of overvoltage protection element material, and it has the powder at P-N interface and glass and evenly distributes and form the structure of a porous P-N-P and insulator or air, breakdown voltage (V
bT) be minimum P-N-P powder breakdown voltage sum total (the ∑ V that exists between two electrodes
b2) add the breakdown voltage sum total (∑ Vs) of this path upper insulator glass or air, but the characteristic electron of this structure will to control less breakdown voltage be difficulty comparatively, and to bear energy very little all be its shortcoming.So 469188 publication number patents are to improve the too high shortcoming of Article patent breakdown voltage, propose in above-mentioned material is formed, to add metal-powder again reducing its breakdown voltage, but this material elements bears energy and fails and improves.
Summary of the invention
The object of the invention is in material that a kind of excess voltage suppressor is provided and structure, the material of excess voltage suppressor of the present invention, be that a kind of providing can form the porous non-conductor material of connecting perforate continuously, the loose structure of connecting perforate because of this material continuously exists, its insulation impedance is very big, make and itself have low-down leakage current, in electronic circuit system, there is overvoltage surging phenomenon to take place suddenly, the rapid rising of voltage meeting, voltage rises to space discharge breakdown voltage, the space channel of the continuous connection perforate loose structure that material of the present invention provides, can produce arc discharge and the moment conducting, this overvoltage surging is suppressed elimination, and can be used as the material of excess voltage suppressor, this is a main purpose of the present invention.The present invention utilizes the mode of added metal particle to shorten the distance of space discharge channel simultaneously, uses the size of controlling discharge breakdown voltage, sees also the schematic diagram of Fig. 1 (b).
Known overvoltage presses down modulator material, is all constituted by overvoltage inhibitor material with insulating material coating conductor or semiconductor, and the thickness of these insulating material directly influences the breakdown voltage that overvoltage presses down device.Also having with P-N-P powder hybrid metal is overvoltage inhibitor material, the P-N-P interface and the metal powder scale of construction also are the breakdown voltage major control factors of this type of excess voltage suppressor, overvoltage inhibitor material of the present invention, but the problems referred to above, therefore the breakdown voltage of excess voltage suppressor Be Controlled very easily, this is an another object of the present invention.
This overvoltage of connecting the porous structure material made of perforate continuously presses down device, applicable to multiple excess voltage suppressor component structure; See also shown in the 3rd figure (a), the 3rd figure (b), be feasible excess voltage suppressor component structure embodiment of the present invention.As base material, utilize correlation techniques such as printing, transfer printing, cutting and heat treatment with insulation material substrate again, the material of excess voltage suppressor is formed between the metal electrode, can obtain two kinds of excess voltage suppressor component structures.Another kind of feasible component structure sees also shown in Fig. 3 (c), is material of the present invention is main body, and through being molded into bulk, the relative double-sided metallization with material forms required electrode again, promptly is another kind of excess voltage suppressor component structure.Last the present invention also utilizes lamination common burning porcelain manufacturing technology, with connecting metallic conductor and the ceramic green embryo sintering heat treatment of porous structure material in common burning porcelain of perforate continuously, to bury excess voltage suppressor in obtaining in the lamination common burning porcelain.
For making purpose of the present invention, structural feature and function thereof are had further understanding, cooperate icon to be described in detail as follows now, following now enforcement further specifies the present invention, does not mean that only the present invention tightly urgees to be limited to the content that these embodiment disclose.
Description of drawings
Fig. 1 (a): the microstructure key diagram of connecting the porous structure material of perforate for excess voltage suppressor of the present invention continuously
Fig. 1 (b): another microstructure key diagram of connecting the porous structure material of perforate for excess voltage suppressor of the present invention continuously
Fig. 2: for excess voltage suppressor of the present invention is made flow chart
Fig. 3 (a) and (b), (c): be the embodiment of excess voltage suppressor of the present invention
Fig. 4 (a) and (b): be another group embodiment of excess voltage suppressor of the present invention
Fig. 5: be the current/voltage response curve of excess voltage suppressor TLP test of the present invention.
Wherein
100 connect perforate continuously
200 non-conductors
250 conductors
300 metallic conduction electrodes
400 have the porous structure material of continuous connection perforate
500 insulated substrates
600 ceramic green blastema plates
700 via metal conductor electrodes
Embodiment
See also Fig. 1 (a), Fig. 1 (a) is the schematic diagram of overvoltage inhibitor material of the present invention.Its structure is shown in Fig. 1 (a), and overvoltage inhibitor material of the present invention is mainly the porous non-conductor 200 with continuous connection perforate 100.Overvoltage inhibitor material of the present invention has low-down capacitance characteristic, leakage current and higher overvoltage suppresses ability, can be applicable to that therefore the overvoltage on the electronic circuit of high frequency suppresses to eliminate with static.Below, will be further with 4 embodiment, specify technical characterictic of the present invention.
See also Fig. 2, Fig. 2 makes flow chart for excess voltage suppressor of the present invention.Take by weighing compositing formula shown in following table one; and will be that according to Fig. 2 method step the non-conductor 200 (non-conductor powder granule or material) of powder granule adds organic solvent and viscosity adjustment agent; and utilize the rotation stirring mixer to mix with three drum mixers; and make the paste material (being used for forming the porous structure material with continuous connection perforate 400) that is fit to printing as Fig. 3 (a); the porous structure material 400 that utilizes mode of printing to make then to have continuous connection perforate is finished the making of excess voltage suppressor again after heat treatment process between two metal electrodes (as the metallic conduction electrode 300 of Fig. 3 (a)).For the non-conductor 200 of powder granule in the resistance coefficient of 25 ℃ of room temperatures, scope is from 10
8～10
17Ω-cm, and can be high molecular polymer, pottery, metal oxide and glass.
See also Fig. 3 (a)～3 (b), Fig. 3 (a)～3 (b) is the embodiment of excess voltage suppressor of the present invention.Fig. 3 (a) is wherein a kind of excess voltage suppressor structure of the present invention, this structure is to utilize the thick film screen printing or the mode of thin film coating, on insulating properties alumina insulation substrate 500, make layer of metal conductive electrode 300, and aforesaid paste material is covered on this metallic conduction electrode 300, and through 500～1100 ℃ heat treatment, with the porous structure material 400 (about 3～20 μ m of thickness) that obtains having continuous connection perforate 100.On this porous structure material 400, make layer of metal conductive electrode 300 more at last.
Learn by table two,, can provide the overvoltage ripple to press down the channel of device in the discharge of overvoltage surging time space so long as can produce the porous structure material 400 that non-conductor 200 materials have continuous connection perforate 100.And above-mentioned thick film screen printing method includes: methods such as screen printing, bat printing, transfer printing, laser transfer printing, ink jet printing.
Table one
| | Insulator | 1 | | Heat treatment temperature (℃) | |||
| 1 | Al 2O 3(2～3μm) | 75wt％ | Glass dust 1 (＜1 μ m) | 25wt％ | 850 | ||
| 2 | Al 2O 3(4～6μm) | 70wt％ | Glass dust 1 (＜1 μ m) | 30wt％ | 800 | ||
| 3 | Cordierite Cordierite (2～3 μ m) | 75wt％ | Glass dust 1 (＜1 μ m) | 25wt％ | 850 | ||
| 4 | ----- | ----- | Glass dust 1 (10～25 μ m) | 100wt％ | 500 | ||
Table two
| Prescription | Breakdown voltage (v) | Leakage current (nA) | Reaction time (nS) | Electric capacity (pF) |
| 1 | 900～1200 | ＜1 | ＜1 | ＜1.8 |
| 2 | 700～900 | ＜1 | ＜1 | ＜1.3 |
| 3 | 850～1000 | ＜1 | ＜1 | ＜1.5 |
| 4 | 800～1400 | ＜1 | ＜1 | ＜1.0 |
Second specific embodiment is with non-conductor Al
2O
3Hang up 500ppm Pt metal dots (Al
2O
3-Pt), take by weighing compositing formula as shown in Table 3 again, again will be through pretreated (Al with regard to method step shown in Figure 2
2O
3-Pt) non-conductor 200 as powder granule adds organic solvent and viscosity adjustment agent, utilizes the rotation stirring mixer to mix with three drum mixers, is modulated into the paste material that is fit to printing.
Shown in Fig. 3 (b), this is pressing down device similar in appearance to the formed overvoltage ripple of the making flow process of specific embodiment 1, that is porous structure material 400 is just to form thereon in the back of the metallic conduction electrode 300 that forms two ends.Fig. 3 (c) mixes the non-conductor powder, add organic solvent and viscosity and adjust agent, utilize rotation to mix and make slurry, laminate through the scraper moulding, cut afterwards, heat treatment, utilize the thick film screen printing or the mode of thin film coating again, make metallic conduction electrode 300 in these porous structure material 400 two sides with continuous connection perforate 100.
As seen utilize the different elements structure by table four, its porous structure material 400 thickness differences all can be made excess voltage suppressor.Along with thickness increases, space discharge breakdown voltage rises.Prescription 1 compares Al with prescription 5
2O
3Hang up the Pt metal dots, help to reduce space discharge breakdown voltage.
Table three
| Prescription | Insulator 1 (2～3 μ m) 75wt% | Insulator 2 (＜1 μ m) G1 25wt% | Heat treatment temperature (℃) | Structure | Thickness μ |
| 5 | A12O3-Pt | G1 | 850 | 3 (a) figure | 10～15 |
| 6 | Al2O3 | G1 | 850 | 3 (b) figure | 10～15 |
| 7 | Al2O3 | G1 | 850 | 3 (c) figure | 300～350 |
*G1=glass dust 1
Table four
| Prescription | Breakdown voltage (v) | Leakage current (nA) | Reaction time (nS) | Electric capacity (pF) |
| 5 | 450～650 | ＜1 | ＜1 | ＜1.2 |
| 6 | 800～1000 | ＜1 | ＜1 | ＜1.0 |
| 7 | 2200～2500 | ＜4 | ＜1 | ＜5 |
Embodiment 3
See also Fig. 4 (a) and (b), Fig. 4 (a) and (b) are another group embodiment of excess voltage suppressor of the present invention.The 3rd specific embodiment is to utilize lamination common burning porcelain manufacturing technology, and utilizes the prescription 1 excess voltage suppressor element of producing shown in Fig. 4 (a) and Fig. 4 (b).In the making step of excess voltage suppressor element, at first, the surface of one deck common burning porcelain being given birth to blastema plate 600 makes the porous structure material 400 that layer of metal conductive electrode 300 and one deck have continuous connection perforate 100 with the thick film screen printing or the mode of thin film coating respectively.Simultaneously, and another layer common burning porcelain given birth to blastema plate 600 corresponding surfaces with the thick film screen printing or the mode of thin film coating, make another layer metallic conduction electrode 300, shown in Fig. 4 (a).Perhaps shown in Fig. 4 (b), this layer is changed the mode of utilizing through hole (via) filled conductive metal cream connect conducting, be connected, become via metal conductor electrode 700 with conductive electrode with other circuit or element to other layer or surface.
Table five is characteristic values such as the breakdown voltage, leakage current, reaction time, electric capacity of the excess voltage suppressor shown in Fig. 4 (a) and 4 (b), from then in the table as can be known the excess voltage suppressor shown in Fig. 4 (a) and 4 (b) pretty good effect is also arranged.
Table five
| Structure | Breakdown voltage (v) | Leakage current (nA) | Reaction time (nS) | Electric capacity (pF) |
| 4 (a) figure | 850～1000 | ＜1 | ＜1 | ＜2.1 |
| 4 (b) figure | 800～1000 | ＜1 | ＜1 | ＜1.4 |
Embodiment 4
See also the schematic diagram of Fig. 1 (b), Fig. 1 (b) connects another microstructure key diagram of the porous structure material of perforate continuously for excess voltage suppressor of the present invention.The 4th specific embodiment is with non-conductor Al
2O
3And non-conductor 200 powder granules such as G1 add Pt metallic conductor 250 powder granules, take by weighing compositing formula as shown in Table 6, add organic solvent and viscosity adjustment agent with regard to method step shown in Figure 2 again, utilize the rotation stirring mixer to mix, be modulated into the paste material that is fit to printing with three drum mixers.And be made into excess voltage suppressor as Fig. 3 (a) with method as specific embodiment 1.Prescription 1 and prescription 8,9 relatively have in the porous structure material 400 of continuous connection perforate 100 and add the Pt metallic particles, help to reduce space discharge breakdown voltage.The size of above-mentioned Pt metallic conductor 250 powder granules is 0.005 μ m～100 μ m, and its percentage by weight is below 40%.
Table six
| Prescription | Insulator 1 (2～3 μ m) | Insulator 2 (＜1 μ m) | Metallic particles (＜1 μ m) | Heat treatment temperature (℃) | Structure | Thickness μ m |
| 8 | Al 2O 3 68wt％ | G1 23wt％ | Pt 9wt％ | 850 | 3 (a) figure | 10～15 |
| 9 | Al 2O 3 62wt％ | G1 20wt％ | Pt 18wt％ | 850 | 3 (a) figure | 10～15 |
*G1=glass dust 1
Table seven
| Prescription | Breakdown voltage (v) | Leakage current (nA) | Reaction time (nS) | Electric capacity (pF) |
| 8 | 500～700 | ＜1 | ＜1 | ＜1.2 |
| 9 | 250～400 | ＜1 | ＜1 | ＜1.0 |
See also Fig. 5, Fig. 5 is the current/voltage response curve of excess voltage suppressor TLP test of the present invention.As shown in Figure 5, excess voltage suppressor of the present invention is tested via TLP, really can moment conducting by producing arc discharge, and this overvoltage surging is suppressed to eliminate, and can be used as the material of excess voltage suppressor.
The above only is the present invention's preferred embodiment wherein, is not to be used for limiting practical range of the present invention; Be that all equalizations of being done according to the present patent application claim change and modification, be all claim of the present invention and contain.
Claims (12)
1. the manufacture method of an overvoltage inhibitor material, this method comprises:
One or more non-conductor powder granules or material are fully mixed, have a continuous porous structure material of connecting perforate and form.
2. the manufacture method of overvoltage inhibitor material according to claim 1, wherein this non-conductor powder granule or material are in the resistance coefficient of 25 ℃ of room temperatures, and scope is from 10
8～10
17Ω-cm.
3. the manufacture method of overvoltage inhibitor material according to claim 1, wherein this non-conductor powder granule or material are high molecular polymer, pottery, metal oxide and glass.
4. the manufacture method of overvoltage inhibitor material according to claim 1, wherein in the process that forms this porous structure material, the following conductor material of adding 40wt%, the material of this conductor are arbitrary element or above any two kinds or any two or more alloy in gold (Au), silver (Ag), platinum (Pt), palladium (Pd), ruthenium (Ru), aluminium (Al), copper (Cu), nickel (Ni), iron (Fe), zinc (Zn), plumbous (Pb), tin (Sn), tungsten (W), molybdenum (Mo), titanium (Ti), the chromium (Cr).
5. the manufacture method of overvoltage inhibitor material according to claim 1, wherein in the process that forms this porous structure material, adding granular size is the conductive particles of 0.005 μ m～100 μ m.
6. excess voltage suppressor comprises:
One group of conductor electrode is the ground connection conductive electrode one of in this group conductor electrode, and another then is that other circuit or the conductive electrode of element are connected; And
Have one and connect one of the perforate porous structure material continuously, have this this porous structure material of connecting perforate continuously and be arranged between this group conductor electrode.
7. excess voltage suppressor according to claim 6, the material of wherein being somebody's turn to do the group conductor electrode are arbitrary element or above any two kinds or any two or more alloy in gold (Au), silver (Ag), platinum (Pt), palladium (Pd), ruthenium (Ru), aluminium (Al), copper (Cu), nickel (Ni), iron (Fe), zinc (Zn), plumbous (Pb), tin (Sn), tungsten (W), molybdenum (Mo), titanium (Ti), the chromium (Cr).
8. excess voltage suppressor according to claim 6, wherein the formation method of this porous structure material comprises:
One or more non-conductor powder granules or material are fully mixed.
9. excess voltage suppressor according to claim 8, wherein this non-conductor powder granule or material are in the resistance coefficient of 25 ℃ of room temperatures, and scope is from 10
8～10
17Ω-cm.
10. excess voltage suppressor according to claim 8, wherein this non-conductor powder granule or material are high molecular polymer, pottery, metal oxide and glass.
11. excess voltage suppressor according to claim 8, wherein in the process that forms this porous structure material, the following conductor material of adding 40wt%, the material of this conductor are arbitrary element or above any two kinds or any two or more alloy in gold (Au), silver (Ag), platinum (Pt), palladium (Pd), ruthenium (Ru), aluminium (Al), copper (Cu), nickel (Ni), iron (Fe), zinc (Zn), plumbous (Pb), tin (Sn), tungsten (W), molybdenum (Mo), titanium (Ti), the chromium (Cr).
12. voltage suppressor method according to claim 8, wherein in the process that forms this porous structure material, adding granular size is the conductive particles of 0.005 μ m～100 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510069373 CN1862716A (en) | 2005-05-13 | 2005-05-13 | Method for making overvoltage inhibitor material and overvoltage inhibitor thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510069373 CN1862716A (en) | 2005-05-13 | 2005-05-13 | Method for making overvoltage inhibitor material and overvoltage inhibitor thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1862716A true CN1862716A (en) | 2006-11-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI497538B (en) * | 2013-10-21 | 2015-08-21 | Uwant Technology Co Ltd | Overvoltage suppressor |
| TWI582798B (en) * | 2016-02-01 | 2017-05-11 | 佳邦科技股份有限公司 | Over-voltage protecting structure and method of manufacturing the same |
-
2005
- 2005-05-13 CN CN 200510069373 patent/CN1862716A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI497538B (en) * | 2013-10-21 | 2015-08-21 | Uwant Technology Co Ltd | Overvoltage suppressor |
| TWI582798B (en) * | 2016-02-01 | 2017-05-11 | 佳邦科技股份有限公司 | Over-voltage protecting structure and method of manufacturing the same |
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