CN1855571A - Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor - Google Patents
Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor Download PDFInfo
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- CN1855571A CN1855571A CNA2006100739112A CN200610073911A CN1855571A CN 1855571 A CN1855571 A CN 1855571A CN A2006100739112 A CNA2006100739112 A CN A2006100739112A CN 200610073911 A CN200610073911 A CN 200610073911A CN 1855571 A CN1855571 A CN 1855571A
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- H—ELECTRICITY
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
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Abstract
An organic thin film transistor, a flat display device including the same, and a method of manufacturing the organic thin film transistor are disclosed. In one embodiment, the organic thin film transistor includes: i) a substrate, ii) a gate electrode disposed on the substrate, iii) a gate insulation film disposed on the gate electrode, iv) a source electrode and a drain electrode spaced from each other and disposed on the gate insulation film, v) an organic semiconductor layer contacting the source electrode and the drain electrode and having an edge to be distinguished from an adjacent organic thin film transistor, and vi) a cantilever layer disposed to cover the organic semiconductor layer, contacting a portion of a layer which is disposed in or under the organic semiconductor layer, and is exposed to the outside of the edge of the organic semiconductor layer. According to one embodiment, a patterning effect of an organic semiconductor layer is easily obtained and characteristics such as an on/off ratio are improved.
Description
The cross reference of related application
The application requires the korean patent application No.10-2005-0022945 that submits to respectively to Korea S Department of Intellectual Property on March 19th, 2005 and 22 days and the interests of No.10-2005-0023841, and their disclosed full contents are hereby incorporated by reference.
Technical field
The present invention relates to a kind of OTFT, comprise the flat-panel monitor of this OTFT and the manufacture method of this OTFT.More particularly, the present invention relates to a kind of patterning effect that can easily obtain organic semiconductor layer and improve performance for example the ON/OFF ratio OTFT, comprise the flat-panel monitor of this OTFT and the manufacture method of this OTFT.
Background technology
Flat-panel monitor for example LCD (LCD) or electroluminescent display (ELD) uses thin-film transistor to serve as switching device and the pixel driving device that is used to control pixel work.
Thin-film transistor comprises the source electrode and the drain electrode that face with each other, comprise the semiconductor layer that is formed on the channel region between this source electrode and this drain electrode and with the gate electrode of this source electrode, this drain electrode and the insulation of this semiconductor layer.
When this thin-film transistor with said structure forms array, because it serves as independently switching device, so this semiconductor layer preferably can be patterned to prevent crosstalking between the adjacent films transistor.In traditional silicon thin film transistor, use photoetching process to come the composition silicon semiconductor layer.
Meanwhile, along with continuation, attempted to use plastic base to come the instead of glass substrate for the research of flexible flat panel display device.Yet,, need to substitute traditional silicon thin film transistor because plastic base can not stand high-temperature process.
Therefore, proposed on plastic base, to form under the low temperature technology of thin-film transistor.Especially, carried out just, wherein forming the thin-film transistor of organic semiconductor layer at low temperatures to the research of OTFT manufacturing.Yet this organic semiconductor layer can not use traditional photoetching process to come composition.This is because may damage this organic semiconductor layer in conjunction with the conventional method of wet method or dry method etch technology.
Equally, this OTFT has shortcoming, wherein because organic semiconducting materials has very high resistance, its mobility and ON/OFF are than being low, if and gate electrode provides enough raceway grooves for this organic semiconducting materials, then electric current does not just flow between source electrode and drain electrode.
Summary of the invention
One aspect of the present invention a kind of patterning effect that wherein can easily obtain organic semiconductor layer is provided and improve performance for example the ON/OFF ratio OTFT, comprise the flat-panel monitor of this OTFT and the manufacture method of this OTFT.
Another aspect of the present invention provides first OTFT, comprise: i) substrate, ii) be arranged on the gate electrode on this substrate, iii) be arranged on the gate insulating film on the gate electrode, iv) separate each other and be arranged on source electrode and drain electrode on this gate insulating film, v) contact this source electrode and this drain electrode and have the organic semiconductor layer at the edge that is used to distinguish adjacent OTFT, and the cantilever layer (cantilever layer) that vi) covers this organic semiconductor layer, this cantilever becomes contact to be arranged among this organic semiconductor layer or the part of following layer and be exposed to the outside at the edge of this organic semiconductor layer.
In one embodiment, the part of at least one of gate insulating film, source electrode and drain electrode can be exposed to the outside at the edge of organic semiconductor layer.
In one embodiment, cantilever layer can comprise that at least the first opening is to expose the part of organic semiconductor layer.
In one embodiment, first opening of cantilever layer can be arranged to corresponding to except the zone the zone between source electrode and the drain electrode.
In one embodiment, can part (coupling part) form closed trajectory, this part is by i) connect cantilever layer, ii) be arranged among the organic semiconductor layer or below, and the outside that iii) is exposed to the edge of organic semiconductor layer.
In one embodiment, the zone between source electrode and drain electrode can be arranged in the closed trajectory that is formed by the coupling part.
In another embodiment, straight line can be to form by the coupling part is approximate.
In one embodiment, at least one pair of parallel lines can be formed by the coupling part.
In another embodiment, the zone between source electrode and drain electrode can be arranged in the parallel lines that formed by the coupling part.
In one embodiment, gate insulating film can covering grid electrode.
In one embodiment, cantilever layer is conducted electricity.
In one embodiment, bias voltage can be applied in to cantilever layer.
In one embodiment, can apply the voltage opposite to cantilever layer with the polarity of voltage that imposes on gate electrode.
In another embodiment, when in organic semiconductor layer, forming raceway groove, and can apply the voltage opposite to cantilever layer with the polarity of voltage that imposes on gate electrode.
In one embodiment, organic semiconductor layer can be a p type organic semiconductor layer, and when not forming raceway groove in organic semiconductor layer, the electromotive force of cantilever layer can be lower than the electromotive force of gate electrode.
In another embodiment, organic semiconductor layer can be a n type organic semiconductor layer, and when not forming raceway groove in organic semiconductor layer, the electromotive force of cantilever layer can be higher than the electromotive force of gate electrode.
Another aspect of the present invention provides second OTFT, comprise: i) substrate, ii) be arranged on the gate electrode on the substrate, iii) be arranged on the gate insulating film on the gate electrode, iv) separate each other and be arranged on source electrode and drain electrode on this gate insulating film, v) connect this source electrode and drain electrode and have the organic semiconductor layer at the edge that is used to distinguish adjacent OTFT, vi) cover this organic semiconductor layer, connect and to be arranged among this organic semiconductor layer or the part of following layer and be exposed to the cantilever layer of outside at the edge of this organic semiconductor layer, and vii) connect this cantilever layer and corresponding to the auxiliary electrode of gate electrode.
In one embodiment, auxiliary electrode can be arranged on the upper surface of cantilever layer.
In another embodiment, auxiliary electrode can be arranged on the lower surface of cantilever layer.
In one embodiment, groove can be formed on the upper surface of cantilever layer, and auxiliary electrode is arranged in this groove.
In addition in one embodiment, groove can be formed on the lower surface of cantilever layer, and auxiliary electrode is arranged in this groove.
In one embodiment, second opening is formed in the cantilever layer, and auxiliary electrode is arranged in second opening.
In one embodiment, can apply bias-voltage to auxiliary electrode.
In one embodiment, can apply the voltage opposite to auxiliary electrode with the polarity of voltage that imposes on gate electrode.
In another embodiment, when in organic semiconductor layer, forming raceway groove, can apply the voltage opposite to auxiliary electrode with the polarity of voltage that imposes on gate electrode.
In one embodiment, organic semiconductor layer can be a p type organic semiconductor layer, and when not forming raceway groove in organic semiconductor layer, the electromotive force of auxiliary electrode can be lower than the electromotive force of gate electrode.
In another embodiment, organic semiconductor layer can be a n type organic semiconductor layer, and when not forming raceway groove in organic semiconductor layer, the electromotive force of auxiliary electrode can be higher than the electromotive force of gate electrode.
In one embodiment, cantilever layer can connect the part of outside at the edge of the organic semiconductor layer that is exposed to one of gate insulating film, source electrode and drain electrode.
In one embodiment, cantilever layer can comprise that at least the first opening is to expose the part of organic semiconductor layer.
In one embodiment, first opening of cantilever layer can be arranged to corresponding to except the zone the zone between source electrode and the drain electrode.
In one embodiment, can form closed trajectory by the coupling part.
In one embodiment, the zone between source electrode and drain electrode can be arranged in the closed trajectory that is formed by the coupling part.
In one embodiment, gate insulating film can cover this gate electrode.
Another aspect of the present invention provides a kind of flat-panel monitor that comprises first OTFT.
Another aspect of the present invention provides a kind of flat-panel monitor that comprises second OTFT.
Of the present inventionly provide a kind of method of making OTFT more on the other hand, this method comprises: i) form gate electrode on substrate, form gate insulating film to cover this gate electrode, that separate each other with formation and be arranged on source electrode and drain electrode on this gate insulating film, ii) form sacrifice layer to cover this source electrode, drain electrode and gate insulating film, iii) this sacrifice layer of composition is to expose the part except the layer below this sacrifice layer the zone between source electrode and the drain electrode, iv) form cantilever layer to cover the expose portion of this sacrifice layer and the layer below this sacrifice layer, v) remove this sacrifice layer and vi) in the removed zone of sacrifice layer, form organic semiconductor layer.
In one embodiment, sacrifice layer can be a photoresist.
In one embodiment, sacrifice layer can use wet etching to remove.
In one embodiment, organic semiconductor layer can use one of spin-coating method and infusion process to form.
In one embodiment, this method can also comprise: after forming organic semiconductor layer, remove remaining organic semiconducting materials from cantilever layer.
In one embodiment, can be by irradiation ultraviolet radiation or ozone O on the organic semiconducting materials of remainder
3-or the organic semiconducting materials that plasma treatment should remainder remove remaining organic semiconducting materials.
Description of drawings
Embodiment of the present invention will be described with reference to the accompanying drawings.
Fig. 1 is the cross-sectional view of the OTFT of exemplary embodiments according to the present invention.
Fig. 2 to Fig. 9 is the cross-sectional view of the manufacturing process of the OTFT shown in Fig. 1.
Figure 10 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 11 is according to the cross-sectional view of the OTFT of an exemplary embodiments more of the present invention.
Figure 12 is the cross-sectional view according to the OTFT of another exemplary embodiments more of the present invention.
Figure 13 is the cross-sectional view of Figure 12 XIII-XIII along the line.
Figure 14 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 15 is the cross-sectional view of Figure 14 XV-XV along the line.
Figure 16 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 17 is the cross-sectional view of Figure 16 XVII-XVII along the line.
Figure 18 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 19 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 20 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 21 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 22 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 23 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 24 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 25 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 26 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
Figure 27 is the cross-sectional view of Figure 26 XXVII-XXVII along the line.
Embodiment
With reference now to the accompanying drawing embodiment of the present invention will be described in more detail.
Fig. 1 is the cross-sectional view of the OTFT of exemplary embodiments according to the present invention.With reference to figure 1, OTFT is formed on the substrate 10.Substrate 10 can be formed by glass material, plastic material or metal.The dielectric film (not shown) can also be inserted between OTFT and the metal substrate.
This OTFT comprises gate electrode 11 that is formed on the substrate 10 and the gate insulating film 12 that is formed on the gate electrode 11.As shown in Figure 1, in one embodiment, gate insulating film 12 is formed on the whole surface of substrate 10 with covering grid electrode 11.In another embodiment, can carry out various variations in gate insulating film 12, for example, it can be patterned on the substrate 10 or only form on gate electrode 11.In one embodiment, the resilient coating (not shown) can also be formed on the substrate 10 to keep this smooth substrate 10 and to stop impurity to infiltrate in this OTFT.The said structure of this OTFT can be suitable for following other embodiment that will describe equally.
The source electrode 13 and the drain electrode 14 that separate each other are formed on the gate insulating film 12.The organic semiconductor layer 15 that covers or contact source electrode 13 and drain electrode 14 is formed on the gate insulating film 12.In one embodiment, gate electrode 11, source electrode 13 and drain electrode 14 can be formed by electric conducting material.
In one embodiment, organic semiconductor layer 15 can be formed by the Semiconductor Organic material.In one embodiment, the HMW organic semiconductor layer can be formed by one of following material: polythiophene, polyparaphenylene 1, the derivative of 2 ethenylidenes (polyparaphenylenevinylene), polyparaphenylene, poly-fluorenes, polythiophene 1,2 ethenylidene, heterocycle polythiophene aromatic copolymer and these materials.In one embodiment, the oligomer organic semiconductor layer can be formed by one of following material: (pyromelitic diimide) is with the perylene tetracarboxylic dianhydride (derivative of perylentetracarbossyl dianhydride) Huo perylene tetracarboxylic imidodicarbonic diamide (perylentetracarbossyl diimide) and these materials for the Oligopoly thiophene of the oligomeric acene of pentacene, aphthacene, naphthalene, α-6-thiophene, α-5-thiophene, metallic or metal-free phthalocyanine, high temperature melitic dianhydride (pyromelitic dianhydride) or high temperature melitic imidodicarbonic diamide.In another embodiment, organic semiconductor layer can be formed by the various materials except above-mentioned material.
Yet because organic semiconductor layer 15 has high resistance, even organic semiconductor layer 15 forms single main body, the OTFT that fully separates each other can not produce yet and crosstalk.Therefore, in one embodiment, the organic semiconductor layer 15 that composition is adjacent is enough, just, comprises edge 15a, makes adjacent OTFT not produce and crosstalks.In one embodiment, organic semiconductor layer can be by independent composition with corresponding to each OTFT in the following examples that are described below.
In one embodiment, OTFT comprise cantilever (cover or protection) layer 16 (.Cantilever layer 16 is set to cover organic semiconductor layer 15.In one embodiment, cantilever layer 16 contact with organic semiconductor layer 15 same planes in the layer that forms or organic semiconductor layer 15 below layer.For example, cantilever layer 16 connect be arranged on organic semiconductor layer 15 same planes on or part below organic semiconductor layer 15, and be exposed to the outside of the edge 15a of organic semiconductor layer 15.As shown in Figure 1, be arranged on gate insulating films 12 below organic semiconductor layer 15 and the cantilever layer 16 and contact the part of outside that gate insulating film 12 is exposed to the edge of organic semiconductor layer 15.Although in Fig. 1, cantilever layer 16 is arranged to the whole zone corresponding to substrate 10, and it is not limited thereto and it can be changed to the interior various forms that is patterned at that comprises cantilever layer 16.Other embodiment that the said structure of cantilever layer 16 is suitable for describing subsequently equally.
With reference now to accompanying drawing 2 to accompanying drawing 9, as described in Figure 1 the manufacturing process of the OTFT of exemplary embodiments according to the present invention is described.
With reference to figure 2, on substrate 10, form gate electrode 11 and form the remainder of gate insulating film 12 with covering grid electrode 11 and substrate 10.On gate insulating film 12, form source electrode 13 and the drain electrode 14 that separates each other.
With reference to figure 3, form sacrifice layer 17 to cover source electrode 13, drain electrode 14 and gate insulating film 12.With reference to figure 4, composition sacrifice layer 17 is to form edge 17a.In one embodiment, the composition of sacrifice layer 17 causes being formed at least a portion of the layer below the sacrifice layer 17 and the zone between source electrode 13 and drain electrode 14 and is exposed.The part of gate insulating film 12 is exposed in the embodiment of Fig. 4.In another embodiment, the part of the part of source electrode 13 and/or drain electrode 14 is exposed.Edge 17a is arranged on the position identical with the edge 15a of the organic semiconductor layer shown in Fig. 1.
In one embodiment, sacrifice layer 17 can be formed by photoresist.Apply photoresist, composition is as shown in Figure 4 finished in exposure, development thus.
In one embodiment, after composition sacrifice layer 17, with reference to figure 5, form cantilever layer 16 to cover sacrifice layer 17 and with the expose portion of lower member: i) the source electrode 13, and ii) drain electrode 14, or iii) are arranged on the gate insulating film 12 below the sacrifice layer 17.In the embodiment of Fig. 5, cantilever layer 16 is formed on the expose portion that is arranged on the gate insulating film 12 below the sacrifice layer 17.In one embodiment, cantilever layer 16 can be formed by tetraethoxysilane (TEOS) or silicon nitride etc.In another embodiment, except above-mentioned material, cantilever layer 16 can be formed by various materials, and has sufficient mechanical integrity usually.
After above-mentioned operation, as shown in Figure 6, remove sacrifice layer 17, it is at i) source electrode 13, drain electrode 14 or gate insulating film 12 and ii) produce the space between the cantilever layer 16.In one embodiment, cantilever layer 16 has sufficient mechanical integrity to overcome the stress that is caused by following space.
Several different methods can be used to remove sacrifice layer 17, for example, uses for example wet etching of HF, BHF or CIF3 of etching liquid.In one embodiment, cantilever layer 16 can by can not be etched method change or etched material forms.
After removing sacrifice layer 17, with reference to figure 7, organic semiconductor layer 15 is formed in the removed space of sacrifice layer 17, therefore makes this OTFT.Several different methods can be used to form organic semiconductor layer 15, for example, and spin-coating method or infusion process.
In one embodiment, when spin-coating method or infusion process are used for forming organic semiconductor layer 15 in etched space, organic semiconducting materials 15c can also be arranged on the cantilever layer 16 as shown in Figure 8.In this embodiment, after forming organic semiconductor layer 15, to remove the organic semiconducting materials 15c that is retained on the cantilever layer 16.
In one embodiment, as shown in Figure 9, can be by for example irradiation ultraviolet radiation or ozone O
3-or the organic semiconducting materials 15C that plasma treatment should remainder remove the organic semiconducting materials 15c that is retained on the cantilever layer 16.
Use above-mentioned technology to make OTFT as shown in Figure 1, do not have just to have produced under the situation of physics patterned layer 15 patterning effect of organic semiconductor layer 15 thus.And cantilever layer 16 is served as the passivation layer that the protection OTFT avoids outside moisture or other impurity effect, makes need not form extra passivation layer in step subsequently.
Figure 10 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
As described in the above-mentioned exemplary embodiments, in the space of etching, provide organic semiconducting materials to form organic semiconductor layer 15.Organic semiconductor layer 15 contacts or covering source electrode 13 and drain electrode 14.Yet under certain conditions, because cantilever layer 16 is positioned on source electrode 13 and the drain electrode 14, organic semiconducting materials can not exclusively be filled the channel region between source electrode 13 and the drain electrode 14 in the operation process that forms organic semiconductor layer 15.In one embodiment, as shown in figure 10, form an opening 16a at least on cantilever layer 16, making to provide organic semiconducting materials so that this channel region of complete filling via opening 16a.In this embodiment, final OTFT comprises that at least opening 16a is arranged on the part of the organic semiconductor layer 15 below the cantilever layer 16 with exposure.
When spin-coating method or infusion process were used to form organic semiconductor layer 15, organic semiconducting materials 15c can be retained in above the cantilever layer 16 as shown in Figure 8.In one embodiment, the organic semiconducting materials 15c of reservation is removed.
In removing operation, the part of the organic semiconductor layer 15 that exposes by the opening 16a that forms in cantilever layer 16 may be destroyed.In organic semiconductor layer 15, form raceway groove according to the signal that is applied to gate electrode 11.Electric current flows between source electrode 13 and drain electrode 14 by this raceway groove.In this embodiment, for the channel region that prevents organic semiconductor layer 15 avoids destroyedly, opening 16a does not directly form on this channel region as shown in figure 10.
Figure 11 is according to the cross-sectional view of the OTFT of an exemplary embodiments more of the present invention.
In one embodiment, as shown in figure 11, organic semiconductor layer 15 is included in the edge 15a and the edge 15b of two side directions.Just, when organic semiconductor layer 15 was adjacent with a plurality of thin-film transistors, organic semiconductor layer 15 can be included in edge 15a and the edge 15b between the adjacent thin-film transistor.
Figure 12 is the cross-sectional view according to the OTFT of another exemplary embodiments more of the present invention, and Figure 13 is the cross-sectional view of Figure 12 XIII-XIII along the line.
With reference to Figure 12 and 13, closed trajectory (marginal portion in Figure 12 is around the square of independent O TFT) by contact cantilever layer 16, be arranged in the organic semiconductor layer 15 or under and the part of the outside at the edge that is exposed to organic semiconductor layer 15 form.Be arranged on the outside that organic semiconductor layer 15 following gate insulating films 12 are exposed to the edge of the organic semiconductor layer 15 among Figure 12 and Figure 15.Wherein the part that contacts with cantilever layer 16 of this exposed portions forms this closed trajectory.Just, to the independent composition of organic semiconductor layer with corresponding to each OTFT, prevent thus by between adjacent OTFT leakage current produced crosstalks.
In one embodiment, in order to prevent by the crosstalking of the leakage current generating between adjacent OTFT, channel region and adjacent thin-film transistor separate.In one embodiment, this channel region is positioned at by i) contact cantilever layer 16, ii) be arranged in the organic semiconductor layer 15 or closed trajectory that the part of the outside at edge following and that iii) be exposed to organic semiconductor layer 15 forms in, prevent crosstalking between adjacent OTFT thus.In one embodiment, at least one opening 16a as discussed above is formed in the cantilever layer 16, and wherein organic semiconducting materials can be injected into to form organic semiconductor layer 15.
Figure 14 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention, and Figure 15 is the cross-sectional view of Figure 14 XV-XV along the line.
Tend to even figure setting with the OTFT that array format forms.With reference to Figure 14, two of the x direction adjacent thin-film transistors with on perpendicular to this x direction just two adjacent thin-film transistors on the y direction separate fully.Two transistorized organic semiconductor layers of adjacent films that are patterned at the x direction are enough.Because organic semiconductor layer has high resistance, the thin-film transistor that fully separates does not each other produce and crosstalks.
In one embodiment, when from the transistor top view shown in Figure 14, i) contact cantilever layer 16 ii) is arranged in the organic semiconductor layer 15 or the part of the outside of edge 15a following and that iii) be exposed to organic semiconductor layer 15 can form straight line 19 (the y direction among Figure 14) usually.Refer to figs. 14 and 15, the approximate straight line 19 that forms in the coupling part between gate insulating film 12 and cantilever layer 16.
On the x direction in Figure 14 more than two OTFT adjacent also be possible.If like this, described as Figure 16 and Figure 17, form pair of parallel line 19a and 19b (on the y direction in Figure 16) at least by contact portion.In Figure 16 and 17, two parallel lines 19a are formed on each side of this organic semiconductor layer with 19b (parallel with the y direction in Figure 16).
Figure 18 and 19 is cross-sectional views of the OTFT of another exemplary embodiments according to the present invention.
OTFT in the above-mentioned exemplary embodiments comprise by the part that will be arranged on the gate insulating film below the organic semiconductor layer be exposed to the edge of organic semiconductor layer the outside, connect the organic semiconductor layer that this expose portion and cantilever layer are come composition.
Yet the part except this gate insulating film can be exposed to the outside at the edge of this organic semiconductor layer.For example, as shown in figure 18, outside and this expose portion that source electrode 13 is exposed to the edge 15a of organic semiconductor layer 15 connects cantilever layer 16, and the patterning effect of organic semiconductor layer 15 is provided.Another embodiment, as shown in figure 19, source electrode 13 and gate insulating film 12 are exposed to the outside of the edge 15a of organic semiconductor layer, and this expose portion connection cantilever layer 16, and the patterning effect of this organic semiconductor layer is provided.And other distortion and improvement also are possible.
In one embodiment, in the OTFT of the foregoing description and distortion, cantilever layer 16 can be formed by the electric conducting material that is applied in bias-voltage, has improved the characteristic of OTFT thus.
In one embodiment, when organic semiconductor layer 15 was formed by p type organic semiconducting materials, the charge carrier that forms raceway groove in OTFT was the hole.In this embodiment, if negative voltage is applied in the gate electrode 11, because the hole of the electric field influence organic semiconductor layer 15 that this negative voltage that applies produces accumulates on the surface of gate insulating film 12.As a result, the raceway groove (" hole channel ") that is made of the hole forms around gate insulating film 12, and according to electrical potential difference, electric current flows between source electrode 13 and drain electrode 14 by this raceway groove.
In one embodiment, in order easily to form hole channel, on gate electrode 11, apply negative voltage, and on cantilever layer 16, apply positive voltage around gate insulating film 12.Positive voltage is applied to causes more multi-hole to accumulate in around the gate insulating film 12 on the cantilever layer 16, easily form raceway groove thus and reduce the threshold voltage vt h of OTFT.
When not forming raceway groove under the situation that applies negative voltage at the gate electrode 11 of not giving p type OTFT, can apply the characteristic that bias voltage improves this OTFT by giving cantilever layer 16.In other words, does not assemble around gate insulating film 12 in the charge carrier hole, makes not form raceway groove in organic semiconductor layer 15.In one embodiment, for this reason, positive voltage is applied on the gate electrode 11, and negative voltage is applied on the cantilever layer 16.In another embodiment, apply voltage for gate electrode 11, but applied negative voltage for cantilever layer 16.In this, negative voltage imposes on cantilever layer 16, and the electromotive force of its expression cantilever layer 16 is lower than the electromotive force of gate electrode 11.Therefore because the electric field that the negative voltage that applies produces, the charge carrier hole of organic semiconductor layer 15 with on the surperficial facing surfaces of gate insulating film 12, assemble.Therefore, do not form raceway groove on organic semiconductor layer 15, being illustrated in does not have electric current to flow between source electrode 13 and the drain electrode 14.
Apply bias voltage for cantilever layer 16 and reduced threshold voltage vt h and increased the ON/OFF ratio, greatly improved the characteristic of OTFT thus.
In another embodiment, if organic semiconductor layer 15 is formed by n type organic semiconducting materials, this operation also can be used for this organic semiconductor layer 15.In this case, the charge carrier of formation raceway groove is an electronics in OTFT.In this embodiment, if apply positive voltage for gate electrode 11, because the electric field that the positive voltage that applies produces, the electronics of organic semiconductor layer 15 accumulates on the surface of the gate insulating film 12 of organic semiconductor layer 15.As a result, the raceway groove (" electron channel ") that is formed by electronics forms around the gate insulating film 12 of organic semiconductor layer 15, and according to electrical potential difference, electric current is mobile between source electrode 13 and drain electrode 14 by this raceway groove.
In one embodiment, in order to form electron channel easily, apply positive voltage for gate electrode 11, and apply negative voltage for cantilever layer 16 around gate insulating film 12.Apply negative voltage for cantilever layer 16 and cause more electronics to be assembled, easily form electron channel thus around gate insulating film 12.
Equally, when not forming raceway groove under the situation that applies positive voltage at the gate electrode 11 of not giving n type OTFT, can apply the characteristic that bias voltage improves OTFT by giving cantilever layer 16.In other words, around gate insulating film 12, do not assemble carrier electrons, make in organic semiconductor layer 15, not form raceway groove.In one embodiment, for this reason, apply negative voltage for gate electrode 11, and apply positive voltage for cantilever layer 16.In another embodiment, apply voltage for gate electrode 11, but apply positive voltage for cantilever layer 16.In this, apply positive voltage for cantilever layer 16, the electromotive force of expression cantilever layer 16 is relatively higher than the electromotive force of gate electrode 11.Therefore, because the electric field that the positive voltage that applies produces, the electronics of organic semiconductor layer 15 accumulates in on the surperficial facing surfaces of the gate insulating film 12 of organic semiconductor layer 15.Therefore, do not form raceway groove in organic semiconductor layer 15, being illustrated in does not have electric current to flow between source electrode 13 and the drain electrode 14.
Figure 20 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
With reference to Figure 20, with respect to the foregoing description, OTFT comprises the cantilever layer 16 that formed by insulating material and above the gate electrode 11 and the auxiliary electrode 18 that directly forms on the cantilever layer 16.
In the OTFT of previous embodiment, cantilever layer 16 is formed by electric conducting material, and applies bias voltage for cantilever layer 16.In this, to cantilever layer 16 compositions aspect OTFT, not have problems.Yet, when cantilever layer 16 in single main body when adjacent a plurality of OTFT combine, apply different bias voltages can not for each thin-film transistor.
Therefore, the OTFT of present embodiment comprise the cantilever layer 16 that forms by insulating material and corresponding to the auxiliary electrode 18 of gate electrode 11 so that bias voltage is imposed on each OTFT.In one embodiment, the voltage that imposes on auxiliary electrode 18 equals to impose on the voltage of the cantilever layer 16 of previous embodiment.
In one embodiment, for example MoW, ITO etc. form auxiliary electrode 18 by electric conducting material.
Figure 25 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention.
With reference to Figure 25, organic semiconductor layer 15 is included in the edge 15a and the 15b of both direction.Just, when organic semiconductor layer 15 was adjacent with a plurality of thin-film transistors, organic semiconductor layer 15 can be included in edge 15a and the 15b between the adjacent films transistor.
Figure 26 is the cross-sectional view according to the OTFT of another exemplary embodiments of the present invention, and Figure 27 is the cross-sectional view of Figure 26 XXVII-XXVII along the line.Because identical with the embodiment shown in Figure 12 and 13 at Figure 26 except auxiliary electrode 18, so with the descriptions thereof are omitted with the embodiment shown in 27.
As mentioned above, because OTFT can be flexible, they can be used to comprise the various flexible flat panel display devices of thin-film transistor.In one embodiment, flexible flat panel display device is LCD (LCD) or display of organic electroluminescence (OELD).
In one embodiment, OTFT can be as switching thin-film transistor in the flat-panel monitor or the thin-film transistor in drive thin film transistors and the various driver.
When organic thin-film transistor was used as drive thin film transistors, the pixel electrode of display can be connected with one of drain electrode with the source electrode.
In one embodiment, OTFT can be used in particularly in the electroluminescent display (ELD).The concise and to the point now ELD that comprises OTFT that describes.
ELD comprises the various pixel graphics according to the glow color of el light emitting device, and preferably has the red, green and blue pixel.Each sub-pixel comprises self luminous el light emitting device.
Although can use various types of ELD, the ELD of present embodiment is active matrix (AM) the type ELD that comprises according to the OTFT of previous embodiment.
ELD red, green or blue light comprises according to the emission of electric current and displayed image information: the pixel electrode that is connected with one of the source electrode of thin-film transistor and drain electrode, be used to cover the surface electrode of whole pixel and comprise the intermediate layer that is inserted in the luminescent layer between pixel electrode and the surface electrode at least.The present invention is not limited to and states structure, can be applied to the ELD of various structures.
The ELD of present embodiment comprises the OTFT according to one of previous embodiment, prevents from thus to crosstalk and shows exact image according to received image signal.
Embodiments of the invention can be used to comprise any display of OTFT.In one embodiment, OTFT can be embedded in each sub-pixel and wherein not in the drive circuit of display image.
OTFT, the method that comprises the flat-panel monitor of this OTFT and make this OTFT have following effect according to an embodiment of the invention:
The first, use cantilever layer auto composition organic semiconductor layer and do not have this organic semiconductor layer of physics composition.
The second, after forming this organic semiconductor layer, do not need dry method or wet etching operation, improve the characteristic of this organic semiconductor layer thus.
The 3rd, cantilever layer is served as the passivating film that the protection OTFT is avoided outside moisture or other impurity effect, does not need to form extra passivation layer after making.
The 4th, apply threshold voltage and the increase ON/OFF ratio of bias voltage to cantilever layer to reduce OTFT, improve the characteristic of OTFT thus greatly.
Although top description has been pointed out novel features of the present invention with the form that is applied to various embodiment, it will be appreciated by those skilled in the art that and to carry out various omissions, replacement and change and do not depart from the scope of the present invention the form of this device and details or the operation that illustrates.Therefore, scope of the present invention is the description of rather than front definite by appended claims.Being included in the meaning of claim and all changes in the full scope of equivalents includes in their scope.
Claims (45)
1, a kind of OTFT comprises:
Substrate;
Be formed on the gate electrode on this substrate;
Be formed on the gate insulating film on the gate electrode;
Separate each other and be arranged on source electrode and drain electrode on this gate insulating film;
Connect this source electrode and this drain electrode and have the organic semiconductor layer at the edge that the space between adjacent OTFT is provided; And
Cover this organic semiconductor layer, be connected to form with the same plane of this organic semiconductor layer in or the cantilever layer of a part of layer below this organic semiconductor layer, described part exposes this organic semiconductor layer.
2, the OTFT of claim 1, wherein this part is formed at least one of gate insulating film, source electrode and drain electrode.
3, the OTFT of claim 1, wherein this cantilever layer comprises that at least one opening is to expose the part of organic semiconductor layer.
4, the OTFT of claim 3, wherein first opening of this cantilever layer is corresponding to except the zone the zone between source electrode and the drain electrode.
5, the OTFT of claim 1 is wherein by forming closed trajectory along this part around this OTFT.
6, the OTFT of claim 5 is wherein among the zone between source electrode and the drain electrode is positioned at this closed trajectory.
7, the OTFT of claim 1 wherein forms near linear along this part.
8, the OTFT of claim 1, wherein this part forms pair of parallel line at least.
9, the OTFT of claim 8, wherein this part forms two parallel lines, and every line is arranged in every side of this organic semiconductor layer, and wherein is located between these two parallel lines in the zone between source electrode and the drain electrode.
10, the OTFT of claim 1, wherein this gate insulating film covers this gate electrode.
11, the OTFT of claim 1, wherein cantilever layer is formed by electric conducting material.
12, the OTFT of claim 11, wherein this cantilever layer is configured to receive bias voltage.
13, the OTFT of claim 11, wherein this cantilever layer receives and applies the opposite voltage of polarity of voltage that this gives gate electrode.
14, the OTFT of claim 11, wherein this cantilever layer is configured to receive the voltage opposite with the polarity of voltage that imposes on this gate electrode when forming raceway groove in this organic semiconductor layer.
15, the OTFT of claim 11, wherein this organic semiconductor layer is a p type organic semiconductor layer, and when not forming raceway groove in organic semiconductor layer, the electromotive force of this cantilever layer is lower than the electromotive force of this gate electrode.
16, the OTFT of claim 11, wherein this organic semiconductor layer is a n type organic semiconductor layer, and when not forming raceway groove in this organic semiconductor layer, the electromotive force of this cantilever layer is higher than the electromotive force of this gate electrode.
17, a kind of OTFT comprises:
Substrate;
The gate electrode that on this substrate, forms;
The gate insulating film that on this gate electrode, forms;
Separate each other and be formed on source electrode and drain electrode on this gate insulating film;
Cover this source electrode and this drain electrode and have the organic semiconductor layer at the edge that the space between adjacent OTFT is provided;
Cover this organic semiconductor layer, connect be arranged on the same plane of this organic semiconductor layer in or the cantilever layer of the part of layer below this organic semiconductor layer, described part exposes this organic semiconductor layer; And
Be formed on this cantilever layer and direct auxiliary electrode above this gate electrode.
18, the OTFT of claim 17, wherein this auxiliary electrode is formed on the upper surface of this cantilever layer.
19, the OTFT of claim 17, wherein this auxiliary electrode is formed on the lower surface of this cantilever layer.
20, the OTFT of claim 17 wherein forms groove on the upper surface of this cantilever layer, and this auxiliary electrode is formed in this groove.
21, the OTFT of claim 17 wherein forms groove on the lower surface of this cantilever layer, and this auxiliary electrode is formed in this groove.
22, the OTFT of claim 17, its split shed is formed on the cantilever layer, and this auxiliary electrode is formed in the opening.
23, the OTFT of claim 17, wherein this auxiliary electrode is configured to receive bias-voltage.
24, the OTFT of claim 17, wherein this auxiliary electrode is configured to receive and applies the opposite voltage of polarity of voltage that this gives gate electrode.
25, the OTFT of claim 17, wherein this auxiliary electrode is configured to receive the voltage opposite with the polarity of voltage that imposes on this gate electrode when forming raceway groove in this organic semiconductor layer.
26, the OTFT of claim 17, wherein this organic semiconductor layer is a p type organic semiconductor layer, and when not forming raceway groove in organic semiconductor layer, the electromotive force of this auxiliary electrode is lower than the electromotive force of this gate electrode.
27, the OTFT of claim 17, wherein this organic semiconductor layer is a n type organic semiconductor layer, and when not forming raceway groove in this organic semiconductor layer, the electromotive force of this auxiliary electrode is higher than the electromotive force of this gate electrode.
28, the OTFT of claim 17, wherein this part is formed at least one of this gate insulating film, source electrode and drain electrode.
29, the OTFT of claim 17, wherein this cantilever layer comprises that at least one opening is to expose the part of this organic semiconductor layer.
30, the OTFT of claim 29, wherein the opening of this cantilever layer forms corresponding to except the zone the zone between source electrode and the drain electrode.
31, the OTFT of claim 17 is wherein by forming closed trajectory along this part around this OTFT.
32, the OTFT of claim 31, wherein the zone between this source electrode and this drain electrode is arranged in this closed trajectory.
33, the OTFT of claim 17, wherein this gate insulating film covers this gate electrode.
34 1 kinds of flat-panel monitors that comprise OTFT, wherein this OTFT comprises:
Substrate;
Be formed on the gate electrode on this substrate;
Be formed on the gate insulating film on the gate electrode;
Separate each other and be arranged on source electrode and drain electrode on this gate insulating film;
Connect this source electrode and this drain electrode and have the organic semiconductor layer at the edge that the space between adjacent OTFT is provided; And
Cover this organic semiconductor layer, be connected to form with the same plane of this organic semiconductor layer in or the cantilever layer of a part of layer below this organic semiconductor layer, described part exposes this organic semiconductor layer.
35, a kind of flat-panel monitor that comprises OTFT, wherein this OTFT comprises:
Substrate;
The gate electrode that on this substrate, forms;
The gate insulating film that on this gate electrode, forms;
Separate each other and be formed on source electrode and drain electrode on this gate insulating film;
Cover this source electrode and this drain electrode and have the organic semiconductor layer at the edge that the space between adjacent OTFT is provided;
Cover this organic semiconductor layer, connect be arranged on the same plane of this organic semiconductor layer in or the cantilever layer of the part of layer below this organic semiconductor layer, described part exposes this organic semiconductor layer; And
Be formed on this cantilever layer and direct auxiliary electrode above this gate electrode.
36, a kind of method of making OTFT, this method comprises:
On substrate, form gate electrode, form gate insulating film, form and separate each other and be arranged on source electrode and drain electrode on this gate insulating film to cover this gate electrode;
Form sacrifice layer to cover this source electrode, drain electrode and gate insulating film;
This sacrifice layer of composition is with at least a portion of the layer that is exposed to below this sacrifice layer and forms in the zone except the zone between source electrode and drain electrode;
Form cantilever layer to cover the expose portion of this sacrifice layer and the layer below this sacrifice layer;
Remove this sacrifice layer, and
In the removed space of sacrifice layer, form organic semiconductor layer.
37, the method for claim 36, wherein this sacrifice layer is a photoresist.
38, the method for claim 36 wherein uses wet etching to remove this sacrifice layer.
39, the method for claim 36 wherein uses one of spin-coating method and infusion process to form this organic semiconductor layer.
40, the method for claim 36 also comprises: after forming this organic semiconductor layer, remove remaining organic semiconducting materials from cantilever layer.
41, the method for claim 40 is wherein passed through this remaining organic semiconducting materials irradiation ultraviolet radiation or ozone O
3-or carry out plasma treatment and remove this remaining organic semiconducting materials.
42, a kind of OTFT (OTFT) comprising:
First organic semiconductor layer that is formed on the substrate and separates with second organic semiconductor layer of adjacent OTFT, wherein this first organic semiconductor layer and this second organic semiconductor layer all comprise side surface, wherein these side surfaces are toward each other and discontinuous;
At least cover the cantilever protective layer of this first organic semiconductor layer;
Be arranged on the gate electrode on this substrate;
Be arranged on the gate insulation layer on this gate electrode; And
Separate each other and be arranged on source electrode and drain electrode on this gate insulation layer,
Wherein this first organic semiconductor layer covers this source electrode and this drain electrode and this gate insulation layer,
And i wherein) this source electrode, ii) this drain electrode and iii) at least one in this gate insulation layer be exposed to the outside of the side surface of this first organic semiconductor layer, make this opposite side surfaces and this exposed portions form groove.
43, the OTFT of claim 42, wherein this protective layer is formed by tetraethoxysilane (TEOS) or silicon nitride.
44, a kind of OTFT (OTFT) comprising:
Be formed on the substrate and have first organic semiconductor layer of marginal portion, wherein second organic semiconductor layer of this first organic semiconductor layer and adjacent OTFT separates by this marginal portion;
Cover the cantilever layer of this first organic semiconductor layer and second organic semiconductor layer continuously;
Be arranged on the gate electrode on this substrate;
Be arranged on the gate insulation layer on this gate electrode;
Separate each other and be arranged on source electrode and drain electrode on this gate insulation layer; And
Be formed on this cantilever layer or within and the direct auxiliary electrode above this gate electrode,
I wherein) this source electrode, ii) this drain electrode and iii) at least one in this gate insulation layer be exposed to the outside of this this marginal portion, and wherein this cantilever layer covers this exposed portions.
45, the OTFT of claim 44, wherein this cantilever layer is formed by tetraethoxysilane (TEOS) or silicon nitride.
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| KR1020050022945 | 2005-03-19 | ||
| KR1020050022945A KR100719546B1 (en) | 2005-03-19 | 2005-03-19 | Organic thin film transistor, flat panel display apparatus comprising the same, and method of manufacturing the organic thin film transistor |
| KR1020050023841 | 2005-03-22 |
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| CN1855571A true CN1855571A (en) | 2006-11-01 |
| CN100573956C CN100573956C (en) | 2009-12-23 |
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| CNB2006100739112A Active CN100573956C (en) | 2005-03-19 | 2006-03-17 | OTFT and manufacture method thereof and the flat-panel monitor that comprises it |
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| CN107564424B (en) * | 2017-06-19 | 2019-10-18 | 友达光电股份有限公司 | Method of forming a micro-component scaffold |
| WO2020015211A1 (en) * | 2018-07-17 | 2020-01-23 | 武汉华星光电半导体显示技术有限公司 | Flexible display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105023951B (en) * | 2015-07-10 | 2019-08-13 | 广州奥翼电子科技股份有限公司 | Semiconductor thin-film transistor and its manufacturing method and display device and its backboard |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4194436B2 (en) | 2003-07-14 | 2008-12-10 | キヤノン株式会社 | Field effect organic transistor |
| JP4325479B2 (en) * | 2003-07-17 | 2009-09-02 | セイコーエプソン株式会社 | Organic transistor manufacturing method, active matrix device manufacturing method, display device manufacturing method, and electronic device manufacturing method |
| JP2005072200A (en) | 2003-08-22 | 2005-03-17 | Canon Inc | Field effect organic transistor |
| KR100652055B1 (en) * | 2004-12-03 | 2006-12-01 | 엘지.필립스 엘시디 주식회사 | Organic thin film transistor, method of the same, and Liquid crystal Display Device using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107564424B (en) * | 2017-06-19 | 2019-10-18 | 友达光电股份有限公司 | Method of forming a micro-component scaffold |
| WO2020015211A1 (en) * | 2018-07-17 | 2020-01-23 | 武汉华星光电半导体显示技术有限公司 | Flexible display device |
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| KR100719546B1 (en) | 2007-05-17 |
| CN100573956C (en) | 2009-12-23 |
| KR20060101080A (en) | 2006-09-22 |
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