CN1853345A - Micro electric machine system resonator, drive method thereof, manufacturing method thereof, and frequency filter - Google Patents
Micro electric machine system resonator, drive method thereof, manufacturing method thereof, and frequency filter Download PDFInfo
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Abstract
The phases of outputs are made different by 180 DEG to allow unbalanced inputs to be output as balanced outputs. A MEMS resonator (101) has an input electrode (111) for inputting a signal, output electrodes (first output electrode(112),second output electrode(113))for outputting balanced output signals from unbalanced input signals, and an oscillator facing the input electrode (111), first output electrode (112) and second output electrode (113) via a space (121), wherein the first output electrode (112) is disposed at a position having a phase different by 180 DEG from the phase of the input electrode (111) and the second output electrode (113) is disposed at a position having the same phase as that of the input electrode (111).
Description
Technical field
The present invention relates to be easy to export resonator and the driving method and the frequency filter of the MEMS (micro electro mechanical system) of balanced signal.
Background technology
Along with the development of ICT (information and communication technology), it is very fast to utilize the quantity of the device of network recently to increase, and from the viewpoint of ease of use, has the height requirement for radio network technique.
The radio frequency that uses in radio communication (RF) front-end module has semiconductor chip and the relatively large parts of size, such as RF filter, surface acoustic wave (SAW) filter be used for the dielectric filter of intermediate frequency (IF) filter.The existence of these parts has hindered the compactedness and the low cost of RF front end.Current demand is that these filter functions are incorporated in the semiconductor chip.
The research institution that comprises University of Michigan has proposed to use the microoscillator of semiconductor technology formation as (IF) filter of the intermediate frequency in the radio communication device and radio frequency (RF) filter, because microoscillator has such characteristic, such as little device area occupied, can realize high Q value and can be integrated (for example with other semiconductor device, referring to non-patent literature 1, people's such as Frank D.BonnonIII " High-Q HF Microelectromechanical Filters ", IEEE (Institute of Electrical and Electric Engineers), Journal of Solid-State Circuits, Vol.35, No.4, April, 2000, p.512-526).To come with reference to the contour structure cross-sectional view of Figure 18 the typical case of this structure is described.
As shown in figure 18, microoscillator 301 has following structure.Oscillator electrode 312 is arranged on output electrode 311 tops that are installed on the substrate 310, and between have space 321.Oscillator electrode 312 is connected to input electrode 314 through electrode 313.
Next, the operation of microoscillator will be described below.When input electrode 314 is applied the voltage of characteristic frequency, 321 beams (oscillating part) that are installed in the oscillator electrode 312 of output electrode 311 tops vibrate with characteristic frequency through the space, make the electric capacity of the capacitor that constitutes by the space between output electrode 311 and the beam (oscillating part) change, and this change is outputted as the voltage (for example, referring to non-patent literature 1) of output electrode 311.
Yet, the resonance frequency maximum of the microoscillator that proposes so far and verify can not surpass 200MHz, and be difficult to provide the filter of GHz scope by traditional surface acoustic wave (SAW) and film sound wave (FBAR), have high Q value characteristic for the micro-resonator in the GHz audio range frequency scope.
At present, a kind of like this trend is arranged, the resonance peak of output signal becomes less usually in high-frequency range.For the filter characteristic that obtains, the SN that must improve resonance peak leads.According to (for example referring to non-patent literature 1) shown in the document (battlements type example) of University of Michigan, by directly having produced the noise contribution in the output signal by the signal that is formed on the parasitic capacitance between the I/O electrode, in order to reduce this signal, between the input and output electrode, be provided with and applied direct current (DC) oscillator electrode, eliminate noise contribution thus.
In order to obtain the enough output signals of dish-like oscillator, need to surpass the dc voltage of 30V, make practical structure wish to be to use the beam type structure of double bracing beam.Be applied to beam type structure if noise contribution is reduced method, then use electrode lay-out as shown in figure 19.
As shown in figure 19, substrate 410 has the silicon oxide film that is formed on the silicon substrate and the stack membrane of silicon nitride film, and on substrate 410, input electrode 411 and output electrode 412 are arranged in parallel and are spaced apart from each other.Above output electrode and input electrode, beam type oscillator 413 is arranged to such an extent that stride across input electrode 411 and output electrode 412, is gripped with little space 421 between them.Curve shown in the figure is the oscillating curve of beam type oscillator 413.
The oscillator 413 of the resonator of the type provides quadratic modes vibration, non-equilibrium input and non-equilibrium output.If the resonator of the type is used for balance output frequency filter, as shown in figure 20, need to connect balance-non-equilibrium conversion (balun) device 531 and balance-non-equilibrium converting means 532 so, device 531 will be from the previous stage device (for example, integrated circuit) 521 output signal (balance input) is changed into the non-equilibrium input that is used for frequency filter 511, and device 532 is connected the output stage of frequency filter 511 and will changes into balance output from the non-equilibrium output of frequency filter 511.By this way, balanced input signal can be input to the next stage device (for example, integrated circuit) 522 that is connected in frequency filter 511.
Problem to be solved is that the output of the traditional resonator (hereinafter to be referred as the MEMS resonator) in MEMS (micro electro mechanical system) is unbalanced.And, for reality is used, need to use the frequency filter of resonator with non-equilibrium input and balance output.If output is non-equilibrium, need be used for balance-non-equilibrium converting means of changing into balance with non-equilibrium so in addition.
Traditional resonator in traditional MEMS (micro electro mechanical system) is the device with non-equilibrium input and non-equilibrium output.Main trend in the current communicator is the balanced signal in the integrated circuit.In order to use traditional MEMS resonator, for example needing, balance-non-equilibrium (Balun) converter is applied to intermediate-frequency filter.This means the increase of cost and size, cause being difficult to adopt the MEMS resonator.
Summary of the invention
The resonator of MEMS (micro electro mechanical system) has: the input electrode that is used for input signal; The output electrode that is used for output signal; In the face of the oscillator of input electrode and output electrode, the resonator most important characteristic of MEMS (micro electro mechanical system) of the present invention is that output electrode has the electrode that is used to export balanced signal through a space.
In the manufacture method of the resonator of MEMS (micro electro mechanical system), this resonator has: the input electrode that is used for input signal; The output electrode that is used for output signal; In the face of the oscillator of described input electrode and output electrode, preparation method's most important characteristic of the resonator of MEMS (micro electro mechanical system) of the present invention is to comprise step: form input electrode and output electrode simultaneously through a space; Form first input electrode and second input electrode as input electrode; Form first output electrode and second output electrode as output electrode; The mode that first input electrode and first output electrode are arranged amplitude at first input electrode and the oscillator of the first output electrode position that makes becomes identical phase mutually; The mode that second input electrode and second output electrode are arranged amplitude at second input electrode and the oscillator of the second output electrode position that makes becomes identical phase mutually, and with differ 180 ° of oscillator.
In the driving method of the resonator of MEMS (micro electro mechanical system), this resonator has: the input electrode that is used for input signal; The output electrode that is used for output signal; In the face of the oscillator of input electrode and output electrode, and be input non-equilibrium signal and output balanced signal through a space in the driving method most important characteristic of the resonator of MEMS (micro electro mechanical system) of the present invention.
The resonator of MEMS (micro electro mechanical system) comprises: the input electrode that is used for input signal; The output electrode that is used for output signal; In the face of the oscillator of input electrode and output electrode, frequency filter most important characteristic of the present invention is through a space, and resonator has the output electrode that comprises the electrode that is used to import non-equilibrium signal and output balanced signal.
Description of drawings
Fig. 1 is the viewgraph of cross-section of contour structure of first embodiment of MEMS resonator of the present invention;
Fig. 2 is an oscillating curve, shows the oscillation mode of oscillator of the MEMS resonator of Fig. 1;
Fig. 3 A is the manufacture process viewgraph of cross-section to 3H, illustrates the example of the manufacture method of MEMS resonator of the present invention;
Fig. 4 is to use the contour structure circuit diagram of filter of the present invention;
Fig. 5 is the viewgraph of cross-section of contour structure of second embodiment of MEMS resonator of the present invention;
Fig. 6 is an oscillating curve, shows the oscillation mode of oscillator of the MEMS resonator of Fig. 5;
Fig. 7 is the manufacture process viewgraph of cross-section, illustrates the example of manufacture method of the MEMS resonator of second embodiment;
Fig. 8 is the viewgraph of cross-section of contour structure of the 3rd embodiment of MEMS resonator of the present invention;
Fig. 9 is an oscillating curve, shows the oscillation mode of oscillator of the MEMS resonator of Fig. 8;
Figure 10 is the manufacture process viewgraph of cross-section, illustrates the example of manufacture method of the MEMS resonator of second embodiment;
Figure 11 A is the viewgraph of cross-section of contour structure of the 4th embodiment of MEMS resonator of the present invention to 11B;
Figure 12 is an oscillating curve, shows the oscillation mode of oscillator of the MEMS resonator of Figure 11 A;
Figure 13 A is the viewgraph of cross-section of contour structure of the 5th embodiment of MEMS resonator of the present invention to 13B;
Figure 14 is an oscillating curve, shows the oscillation mode of oscillator of the MEMS resonator of Figure 13 A;
Figure 15 is the viewgraph of cross-section of contour structure of the 6th embodiment of MEMS resonator of the present invention;
Figure 16 A is the manufacture process viewgraph of cross-section to 16H, illustrates the example of the manufacture method of MEMS resonator of the present invention;
Figure 17 is the block diagram of the input and output of diagram filter of the present invention;
Figure 18 is the viewgraph of cross-section of the contour structure of traditional MEMS resonator;
Figure 19 is the viewgraph of cross-section of the contour structure of traditional MEMS resonator;
Figure 20 is the block diagram of input and output of the filter of diagram traditional MEMS resonator.
Embodiment
[first embodiment]
Will be with reference to the viewgraph of cross-section of the contour structure of figure 1, first embodiment of MEMS resonator 101 of the present invention is described.
As shown in Figure 1, have on the substrate 110 that is formed on its lip-deep dielectric film (not shown) first output electrode 112 and second output electrode 113 that are formed for the input electrode 111 of input signal abreast and are used for output signal.In addition, first output electrode 112 is arranged on 180 ° the position of differing with input electrode 111, and second output electrode 113 is arranged on the mutually identical position with input electrode 111.And the electrode 134 of resonator is provided with input electrode 111, first output electrode 112 and second output electrode 113 is interposed in the centre.Oscillator 114 is arranged on input electrode 111, first output electrode 112 and second output electrode, 113 tops, through the space 121 with these electrodes mutually in the face of and be connected to electrode 134.Space 121 forms to have the distance of for example about 0.1 μ m between oscillator 114 and input electrode 111, first output electrode 112 and second output electrode 113.
As above the oscillator 114 of the MEMS resonator 101 of Gou Jianing is with three-level schema vibration, and as shown in Figure 2 oscillating curve draws.So, the array output of the output Out1 of MEMS resonator 101 outputs first output electrode 112 and the output Out2 of second output electrode 113, second output electrode 113 and first output electrode 112 have 180 ° differing, thereby non-equilibrium output can be changed into balance output.
Then, will be with reference to as the manufacture process viewgraph of cross-section of Fig. 3 A to 3H, the example of the manufacture method that is used for MEMS resonator 101 of the present invention is described.
As shown in Figure 3A, dielectric film 132 is formed on the semiconductor substrate 131.For example, semiconductor substrate 131 is silicon substrates, and dielectric film 132 is silicon nitride (SiN) films.This silicon nitride film has for example thickness of 1 μ m.Can use the stack membrane of silicon oxide film and silicon nitride film to replace this silicon nitride film.In this mode, substrate 110 is for example by constituting as the silicon substrate of semiconductor substrate 131 and the dielectric film 132 that is formed on the semiconductor substrate.Electrode forms film 133 and is formed on the dielectric film 132.For example, electrode forms film 133 and is made by polysilicon, and can have the thickness of 0.5 μ m.
Then, shown in Fig. 3 B, thereby forming Etching mask by resist-coating and photoetching technique forms film 133 with electrode and is treated to input electrode and output electrode form, by using this Etching mask, electrode is formed film 133 be etched to input electrode 111, first output electrode 112 and second output electrode 113 afterwards.Simultaneously, form film 133 by electrode and form oscillator electrode 134.In this case, first output electrode 112 is arranged on 180 ° the position of differing with input electrode 111, and second output electrode 113 is arranged on the mutually identical position with input electrode 111.And oscillator electrode 134 is provided with the electrode group that will comprise input electrode 111, first output electrode 112 and second output electrode 113 and is interposed in the centre, and spaced apart with this electrode group.
Then, shown in Fig. 3 C, form and cover input electrode 111, first output electrode 112, second output electrode 113 and oscillator electrode 134 than input electrode 111 and output electrode 112 thick sacrifice layers 135.For example, sacrifice layer 135 is silicon oxide film and the thickness with 0.5 μ m.If sacrifice layer 135 is to be made by the material that has etching selectivity with respect to dielectric film 132 and electrode, this just has been enough to so.
Then, shown in Fig. 3 D, by the flattening surface of chemico-mechanical polishing with sacrifice layer 135.At this moment, remaining thin sacrifice layer 135 on input electrode 111, first output electrode 112, second output electrode 113.Because the thickness that stays is the spacing between oscillator to be formed and input electrode 111, first output electrode 112, second output electrode 113 after having determined, so stay sacrifice layer 135 corresponding to spacing.For example, staying thickness on input electrode 111, first output electrode 112, second output electrode 113 is 0.1 μ m sacrifice layer 135.
Then, shown in Fig. 3 E, form Etching mask, and use this etching mask, with the sacrifice layer 135 partially-etched openings 136 that form the part surface that appears electrode 134 by common resist-coating and photoetching technique.
Then, shown in Fig. 3 F, on the whole surface of sacrifice layer 135, form oscillator and form film 137.For example, oscillator formation film 137 is polysilicon film and the thickness with 0.5 μ m.
Then, shown in Fig. 3 G, form Etching mask, and use this etching mask, oscillator is formed film 137 be etched to beam shape oscillator 114 by common resist-coating and photoetching technique.Oscillator 114 is connected to electrode 134 through opening 136.
Then, shown in Fig. 3 H, thereby by the wet etching etching and remove sacrifice layer 135 (referring to Fig. 3 G).Because sacrifice layer 135 is to be made by silica in this example, so used hydrofluoric acid.So, form space 121 in input electrode 111, first output electrode 112 and second output electrode, 113 each both sides and between oscillator 114 and input electrode 111, first output electrode 112 and second output electrode 113.The distance that between oscillator 114 and input electrode 111, first output electrode 112 and second output electrode 113, has about 0.1 μ m.In this mode, formed MEMS resonator 101.
The method that forms every tunic by above-mentioned manufacture method can adopt CVD, sputter, evaporation etc.The thickness of every tunic is suitably designed.If the upper space of dielectric film 132 is made by silica and each electrode is made by polysilicon, sacrifice layer 135 can be made by silicon nitride so.In this case, hot phosphoric acid is used for wet etching sacrifice layer 135.
Use above-mentioned manufacture method, can obtain can be from the three-level schema MEMS resonator 101 of non-equilibrium input and output balance output.
Then, will use the embodiment of MEMS resonator 101 of the present invention with reference to contour structure circuit diagram as shown in Figure 4.
As described previously, MEMS resonator 101 of the present invention is exported from non-equilibrium input and output balance.So,, needn't use balance-non-equilibrium converting means that balance output is changed in non-equilibrium input so if resonator 101 is used as frequency filter.More specifically, as shown in Figure 4, use the frequency filter 171 of resonator 101 of the present invention to export from non-equilibrium input and output balance.Therefore can directly previous stage integrated circuit 181 be connected to frequency filter 171.
[second embodiment]
Will be with reference to the viewgraph of cross-section of the contour structure of figure 5, second embodiment of MEMS resonator of the present invention is described.This MEMS resonator has first output electrode that is arranged on the second output electrode both sides.
As shown in Figure 5, have on the substrate 110 that is formed on its lip-deep dielectric film (not shown), be formed for the input electrode 111 and first output electrode 112 (1121), second output electrode 113 and first output electrode 112 (1122) that are used for output signal of input signal abreast.In addition, first output electrode 112 is arranged on 180 ° the position of differing with input electrode 111, and second output electrode 113 is arranged on and the mutually identical of input electrode 111 and the position between first output electrode 1121 and 1122.And the electrode 134 of resonator is provided with input electrode 111, first output electrode 112 and second output electrode 113 is interposed in the centre.Oscillator 114 is arranged on input electrode 111, first output electrode 112 and second output electrode, 113 tops, through the space 121 with these electrodes mutually in the face of and be connected to electrode 134.Space 121 forms to have the distance of for example about 0.1 μ m between oscillator 114 and input electrode 111, first output electrode 112 and second output electrode 113.
As above the oscillator 114 of the MEMS resonator 102 of Gou Jianing is with the level Four mode oscillation, and as shown in Figure 6 oscillating curve draws.So, the array output of the output Out1 of MEMS resonator 102 output first output electrodes 112 (1121 and 1122) and the output Out2 of second output electrode 113, second output electrode 113 and first output electrode 112 have 180 ° differing, thereby non-equilibrium output can be changed into balance output.
Manufacture method for MEMS resonator 102, with reference to figure 3A to 3H in the described manufacture method, by this way electrode is formed film 133 compositions so that form input electrode 111, first output electrode 1121, second output electrode 113 and first output electrode 1122 in regular turn abreast, as shown in Figure 7.More specifically, first output electrode 1121 and 1122 is arranged on 180 ° the position of differing with input electrode 111, and second output electrode 113 is arranged on the mutually identical position with input electrode 111.And second output electrode 113 is arranged between first output electrode 1121 and 1122.And the electrode 134 of resonator is provided with input electrode 111, first output electrode 112 and second output electrode 113 is interposed in the centre.Other technology is with described those are identical to 3H with reference to figure 3A.
[the 3rd embodiment]
Will be with reference to the viewgraph of cross-section of the contour structure of figure 8, the 3rd embodiment of MEMS resonator of the present invention is described.This MEMS resonator has the input electrode and first output electrode of arranged alternate.
As shown in Figure 8, have on the substrate 110 that is formed on its lip-deep dielectric film (not shown), be formed in regular turn abreast input signal input electrode 111 (1111), be used for output signal first output electrode 112 (1121), be used for input signal and have with input electrode 1111 mutually homophase input electrode 111 (1112), be used for first output electrode 112 (1122) and second output electrode 113 of output signal.In addition, first output electrode 112 is arranged on 180 ° the position of differing with input electrode 111, input electrode 1111 and 1112 and first output electrode 1121 and 1122 arranged alternate, and second output electrode 113 is arranged on input electrode 111 with respect to the opposite side of first output electrode 112 (1122) of the layout rearmost end of 111 and first output electrode 112 that is arranged on input electrode, and is arranged on the mutually identical position with input electrode 111.And the electrode 134 of resonator is provided with input electrode 111, first output electrode 112 and second output electrode 113 is interposed in the centre.Oscillator 114 is arranged on input electrode 111, first output electrode 112 and second output electrode, 113 tops, through the space 121 with these electrodes mutually in the face of and be connected to electrode 134.Space 121 forms to have the distance of for example about 0.1 μ m between oscillator 114 and input electrode 111, first output electrode 112 and second output electrode 113.
As above the oscillator 114 of the MEMS resonator 103 of Gou Jianing is with the Pyatyi mode oscillation, and as shown in Figure 9 oscillating curve draws.So, the array output of the output Out1 of MEMS resonator 103 output first output electrodes 112 (1121 and 1122) and the output Out2 of second output electrode 113, second output electrode 113 and first output electrode 112 have 180 ° differing, thereby non-equilibrium output can be changed into balance output.
Manufacture method for MEMS resonator 103, with reference to figure 3A to 3H in the described manufacture method, by this way electrode is formed film 133 compositions so that form input electrode 1111, first output electrode 1121, input electrode 1112, first output electrode 1122 and second output electrode 113 in regular turn abreast, as shown in figure 10. Input electrode 1111 and 1112 is arranged on has the position of homophase mutually, first output electrode 1121 and 1122 is arranged on 180 ° the position of differing with input electrode 1111 and 1112, the input electrode 1111 and 1112 and first output electrode 1121 and 1122 are arranged alternately, and second output electrode 113 is arranged on input electrode 1112 with respect to the opposite side of the output electrode 1122 of the layout rearmost end of 1111 and 1112 and first output electrode 1121 that is arranged on input electrode and 1122, and is arranged on the mutually identical position with input electrode 1111 and 1112.And the electrode 134 of resonator is provided with input electrode 111, first output electrode 112 and second output electrode 113 is interposed in the centre.Other technology is with described those are identical to 3H with reference to figure 3A.
Similar with MEMS resonator 101, MEMS resonator 102 and 103 also can be as reference frequency filter shown in Figure 4.
In above-mentioned first to the 3rd embodiment, input electrode 111, first output electrode 112, second output electrode 113 and electrode 134 each can be by metal but not polysilicon make.For example, metal can use the material as the metal line of semiconductor device, such as aluminium, gold, copper and tungsten.
In the resonator and driving method thereof of MEMS (micro electro mechanical system) of the present invention, can be owing to provide from the output electrode of non-equilibrium input and output balance output, so non-equilibrium input and balance output are possible.Therefore, frequency filter of the present invention does not need balance-non-equilibrium converting means, and it needs for the RF filter that uses traditional beam type resonator.Its advantage is that circuit is simplified and can low cost be prepared into compactness.
In first to the 3rd embodiment, realized from the purpose of non-equilibrium input and output balance output by the electrode that the balance output of not using balance-non-equilibrium converting means is provided.
[the 4th embodiment]
Will be with reference to the viewgraph of cross-section of the contour structure of figure 11A and the plane figure view of Figure 11 B, the 4th embodiment of MEMS resonator 201 of the present invention is described.
Shown in Figure 11 A and Figure 11 B, have on the substrate 210 that is formed on its lip-deep dielectric film 252, with first input electrode 211, second output electrode 222, the order of first output electrode 221 and second input electrode 212, be provided for first output electrode 221 and second output electrode 222 importing first input electrode 211 and second input electrode 212 of balanced signal and be used to export balanced signal abreast, and their position makes the amplitude at first input electrode 211 and the oscillator 231 of first output electrode, 221 positions be phase-changed into identical phase, and the amplitude at second input electrode 212 and the oscillator 231 of second output electrode, 222 positions is phase-changed into identical phase, and differ 180 ° with the amplitude at the oscillator 231 of first input electrode, 211 positions, oscillator 231 will be explained below.
In the middle of the electrode 233 of resonator and 234 formation are interposed in first input electrode 211, second output electrode 222, first output electrode 221 and second input electrode 212.Oscillator 231 is arranged on first input electrode 211, second output electrode 222, first output electrode 221 and second input electrode, 212 tops, through the space 241 with these electrodes mutually in the face of and be connected to electrode 233 and 234.Space 241 forms for example has the distance of for example about 0.1 μ m between oscillator 231 and first input electrode 211, second output electrode 222, first output electrode 221 and second input electrode 212.
As above the oscillator 231 of the MEMS resonator 201 of Gou Jianing is with three-level schema vibration, and as shown in figure 12 oscillating curve draws.Therefore, MEMS resonator 201 is imported balanced signal to first input electrode 211 from input In1, and this input signal outputs to output Out1 as balanced signal from first output electrode 221.Similarly, balanced signal is input to second input electrode 212 from input In2, and this input signal outputs to output Out2 as balanced signal from second output electrode 222.In this kind mode, balanced input signal is exported as balanced output signal.
[the 5th embodiment]
Will be with reference to the viewgraph of cross-section of the contour structure of figure 13A and the plane figure view of Figure 13 B, the 5th embodiment of MEMS resonator 202 of the present invention is described.
Shown in Figure 13 A and Figure 13 B, have on the substrate 210 that is formed on its lip-deep dielectric film (not shown), with first input electrode 211, second input electrode 212, the order of first output electrode 221 and second output electrode 222, be provided for first output electrode 221 and second output electrode 222 importing first input electrode 211 and second input electrode 212 of balanced signal and be used to export balanced signal abreast, and their position makes the amplitude at first input electrode 211 and the oscillator 231 of first output electrode, 221 positions be phase-changed into identical phase, and the amplitude at second input electrode 212 and the oscillator 231 of second output electrode, 222 positions is phase-changed into identical phase, and differ 180 ° with the amplitude at the oscillator 231 of first input electrode, 211 positions, oscillator 231 will be explained below.
In the middle of the electrode 233 of resonator and 234 formation are interposed in first input electrode 211, second input electrode 212, first output electrode 221 and second output electrode 222.Oscillator 231 is arranged on first input electrode 211, second input electrode 212, first output electrode 221 and second output electrode, 222 tops, through the space 241 with these electrodes mutually in the face of and be connected to electrode 233 and 234.Space 241 forms for example has the distance of for example about 0.1 μ m between oscillator 231 and first input electrode 211, second input electrode 212, first output electrode 221 and second output electrode 222.
As above the oscillator 231 of the MEMS resonator 202 of Gou Jianing is with three-level schema vibration, and as shown in figure 14 oscillating curve draws.So MEMS resonator 202 is imported balanced signal to first input electrode 211 from input In1, and this input signal outputs to output Out1 as balanced signal from first output electrode 221.Similarly, balanced signal is input to second input electrode 212 from input In2, and this input signal outputs to output Out2 as balanced signal from second output electrode 222.In this kind mode, balanced input signal is exported as balanced output signal.
[the 6th embodiment]
In the above-mentioned the 4th and the 5th embodiment, the MEMS resonator of three-level schema has been described.MEMS resonator of the present invention can prepare to come with 2n level mode oscillation (n is the natural number more than or equal to 2).For example, will can be with the example of the MEMS resonator of six grades of mode oscillations with reference to the viewgraph of cross-section explanation of the contour structure of Figure 15.
As shown in figure 15, have on the substrate 210 that is formed on its lip-deep dielectric film (not shown), with first input electrode 211, second input electrode 212, first output electrode 221, second output electrode 222, the order of the 3rd input electrode 213 and the 4th input electrode 214, be provided for importing first input electrode 211 of balanced signal abreast, second input electrode 212, the 3rd input electrode 213 and the 4th input electrode 214 and first output electrode 221 and second output electrode 222 that are used to export balanced signal, and their position makes in first input electrode 211, the amplitude of the oscillator 231 of second output electrode 212 and the 3rd input electrode 213 positions is phase-changed into identical phase, and in second input electrode 212, second output electrode 222 is phase-changed into identical phase with the amplitude of the oscillator 231 of the 4th input electrode 214 positions, and differ 180 ° with the amplitude at the oscillator 231 of first input electrode, 211 positions, oscillator 231 will be explained below.
In the middle of the electrode 233 of resonator and 234 formation are interposed in first input electrode 211, second input electrode 212, the 3rd input electrode 213, the 4th input electrode 214, first output electrode 221 and second output electrode 222.Oscillator 231 is arranged on first input electrode 211, second input electrode 212, the 3rd input electrode 213, the 4th input electrode 214, first output electrode 221 and second output electrode, 222 tops, through the space 241 with these electrodes mutually in the face of and be connected to electrode 233 and 234.Space 241 forms for example has the distance of for example about 0.1 μ m between oscillator 231 and first input electrode 211, second input electrode 212, first output electrode 221, second output electrode 222, the 3rd input electrode 213 and the 4th input electrode 214.
As above the oscillator 231 of the MEMS resonator 203 of Gou Jianing is with six grades of mode oscillations, and as shown in figure 15 oscillating curve draws.So MEMS resonator 203 is imported balanced signal to first input electrode 211 and the 3rd input electrode 213 from input In1, and this input signal outputs to output Out1 as balanced signal from first output electrode 221.Similarly, balanced signal is input to second input electrode 212 and the 4th input electrode 214 from input In2, and this input signal outputs to output Out2 as balanced signal from second output electrode 222.In this kind mode, balanced input signal is exported as balanced output signal.
Each input electrode (first input electrode, second input electrode, the 3rd input electrode ...) of the MEMS resonator of 2n (n is the natural number more than or equal to 2) level oscillation mode and the placement position of each output electrode (first output electrode, second output electrode, the 3rd output electrode ...) are as follows:
First input electrode is arranged on the odd positions among the 2n, the odd positions that first output electrode that is used for exporting the signal that is input to first input electrode is arranged on 2n except that the position that first input electrode is set.Second input electrode is arranged on the even number position among the 2n, the even number position that second output electrode that is used for exporting the signal that is input to second input electrode is arranged on 2n except that the position that second input electrode is set.In six grades or higher pattern, the 3rd input electrode and (the 3rd input electrode of input electrode afterwards, the 4th input electrode ...) if input electrode its have the phase identical with first input electrode, be arranged on odd positions idle among the 2n so, if perhaps it has the phase identical with second input electrode, be arranged on even number position idle among the 2n so, and the 3rd output electrode and (the 3rd output electrode of output electrode afterwards, the 4th output electrode ...) if output electrode its have the phase identical with first output electrode, be arranged on odd positions idle among the 2n so, if perhaps it has the phase identical with second output electrode, be arranged on even number position idle among the 2n so.
As mentioned above, if the mode of each input electrode and each output electrode that is provided with makes balanced signal be imported into input electrode and this signal as the output of balanced signal from output electrode, MEMS resonator so of the present invention can be prepared as the MEMS resonator of 2n level (n is the natural number more than or equal to 2).Because more the oscillator of the MEMS resonator of fine mode is elongated, so can handle oscillator accurately.When forming more fine mode MEMS resonator, need decide the number of input electrode and output electrode by the durability of considering oscillator and its mounting portion.
[the 7th embodiment]
Next, will be with reference to as the manufacture process viewgraph of cross-section of Figure 16 A to 16H, the example of the manufacture method that is used for MEMS resonator 201 of the present invention is described.
Shown in Figure 16 A, dielectric film 252 is formed on the semiconductor substrate 251.For example, semiconductor substrate 251 is silicon substrates, and dielectric film 252 is silicon nitride (SiN) films.This silicon nitride film has for example thickness of 1 μ m.Can use the stack membrane of silicon oxide film and silicon nitride film to replace this silicon nitride film.In this mode, substrate 210 is for example by constituting as the silicon substrate of semiconductor substrate 251 and the dielectric film 252 that is formed on the semiconductor substrate.Electrode forms film 253 and is formed on the dielectric film 252.For example, electrode forms film 253 and is made by polysilicon, and can have the thickness of 0.5 μ m.
Then, shown in Figure 16 B, be formed for electrode is formed the Etching mask that film 253 is treated to input electrode and output electrode form by resist-coating and photoetching technique, by using this Etching mask, electrode is formed film 253 (referring to Figure 16 A) be etched with formation first input electrode 211, second output electrode 222, first output electrode 221 and second input electrode 212 afterwards.Simultaneously, form film 253 by electrode and form oscillator electrode 233 and 234.In this case, the position that first input electrode 211 and first output electrode 221 are provided with makes the amplitude at first input electrode 211 and the oscillator of first output electrode, 221 positions have identical phase mutually, and the position that second output electrode 222 is provided with makes after second input electrode 212 and second output electrode, 222 positions the amplitude with the oscillator of formation be phase-changed into identical phase, and with after first input electrode, 211 positions, the amplitude of the oscillator that forms is differed 180 °, oscillator will form afterwards.For example, first input electrode 211, second output electrode 222, first output electrode 221 and second input electrode 212 form in proper order with this.In the middle of oscillator electrode 233 and 234 formation will comprise that the electrode group of first input electrode 211, second output electrode 222, first output electrode 221 and second input electrode 212 is interposed in, and spaced apart with this electrode group.If the layout of the layout of first and second input electrodes 211 and 212 and first and second output electrodes 221 and 222 allows balanced input signal to be imported into each input electrode and balanced output signal is output from each output electrode, this is just enough so.
Then, shown in Figure 16 C, form than first and second input electrodes 211 and 212 and first and second output electrodes 221 and 222 thick sacrifice layers 254 and to cover first input electrode 211, second output electrode 222, first output electrode 221, second input electrode 212 and oscillator electrode 233,234.For example, sacrifice layer 254 is silicon oxide film and the thickness with 0.5 μ m.If sacrifice layer 254 is to be made by the material that has etching selectivity with respect to dielectric film 252 and electrode, so just be enough to.
Then, shown in Figure 16 D, by the flattening surface of chemico-mechanical polishing with sacrifice layer 254.At this moment, remaining thin sacrifice layer 254 on first and second input electrodes 211 and 212 and first and second output electrodes 221 and 222.Because the thickness that stays has determined oscillator afterwards to be formed and the spacing between first and second input electrodes 211 and 212 and first and second output electrodes 221 and 222, so stay sacrifice layer 254 corresponding to spacing.For example, staying thickness on first and second input electrodes 211 and 212 and first and second output electrodes 221 and 222 is 0.1 μ m sacrifice layer 254.Similarly, on electrode 233 and 234, also stayed sacrifice layer 254.
Then, shown in Figure 16 E, form Etching mask, and use this etching mask, with the sacrifice layer 254 partially-etched openings 255 and 256 that form the part surface that appears electrode 233 and 234 by common resist-coating and photoetching technique.
Then, shown in Figure 16 F, on the whole surface of sacrifice layer 254, form oscillator and form film 257.For example, oscillator formation film 257 is polysilicon film and the thickness with 0.5 μ m.
Then, shown in Figure 16 G, form Etching mask, and use this etching mask, oscillator is formed film 257 be etched with formation beam shape oscillator 231 by common resist-coating and photoetching technique.Oscillator 231 is connected to electrode 233 and 234 through opening 255 and 256.
Then, shown in Figure 16 H, come etching and remove sacrifice layer 254 (referring to Figure 16 G) by wet etching.Because sacrifice layer 254 is to be made by silica in this example, so used hydrofluoric acid.Therefore, form space 241 in first input electrode 211, second output electrode 222, first output electrode 221 and second input electrode, 212 each both sides and between oscillator 231 and first input electrode 211, second output electrode 222, first output electrode 221 and second input electrode 212.Space 241 has the distance of about 0.1 μ m between oscillator 231 and first input electrode 211, second output electrode 222, first output electrode 221 and second input electrode 212.In this mode, formed MEMS resonator 201.
The method that forms every tunic by above-mentioned manufacture method can adopt CVD, sputter, evaporation etc.The thickness of every tunic is suitably designed.If the upper surface of dielectric film 252 is made by silica and each electrode is made by polysilicon, sacrifice layer 254 can be made by silicon nitride so.In this case, hot phosphoric acid is used for wet etching sacrifice layer 254.
Use above-mentioned manufacture method, can obtain can be from the fourth stage pattern MEMS resonator 201 of non-equilibrium input and output balance output.
[the 8th embodiment]
Preparation method for MEMS resonator 202 of the present invention, at above-mentioned reference such as Figure 16 A in the preparation method of the described MEMS resonator 201 of the present invention of manufacture process viewgraph of cross-section of 16H, first input electrode 211 is as first input electrode, second input electrode is formed on the position of second output electrode 222, first output electrode 221 is as first output electrode, and second output electrode is formed on the position of second input electrode 212.Other technology is similar to the described preparation method of the 6th embodiment.
[the 9th embodiment]
Next, will be with reference to the described block diagram of Figure 17, the embodiment as frequency filter describes to wherein MEMS resonator 201 or MEMS resonator 202.
As mentioned above, MEMS resonator 201 of the present invention is exported from balance input and output balance.Therefore, if resonator 201 as frequency filter, needn't use the balance-non-equilibrium converting means that is used for non-equilibrium output is changed into balance output so.More specifically, as shown in figure 17, the resonator 201 of the application of the invention is as frequency filter 271, is output as balance output from the output signal (balance input) of previous stage device (for example, integrated circuit) 281.So, can directly next stage device (for example, integrated circuit) 282 be directly connected to frequency filter 271.
Similar with resonator 201, resonator 202 and 203 also can be used as with reference to the described frequency filter of Figure 17.
In above-mentioned the 4th to the 9th embodiment, each of first input electrode 211, second output electrode 222, first output electrode 221, second input electrode 212 and electrode 234 can be by metal but not polysilicon make.For example, metal can use the material as the metal line of semiconductor device, such as aluminium, gold, copper and tungsten.
In the MEMS resonator of the present invention the 4th to the 6th embodiment, because the input electrode of input balance input and the output electrode of output balance output are provided, so balance input and balance output are possible.Therefore, use the frequency filter of MEMS resonator of the present invention, particularly RF filter and IF filter need be for the RF filter or the required balance-non-equilibrium converting means of IF filter that use traditional beam type resonator.Its advantage is that circuit is simplified and can low cost be prepared into compactness.
In the preparation method of the MEMS resonator of the of the present invention the 7th and the 8th embodiment as mentioned above, form input electrode and output electrode simultaneously, first and second input electrodes form input electrode, first and second output electrodes form output electrode, the mode that first input electrode and first output electrode be set makes the amplitude at first input electrode and the oscillator of the first output electrode position be phase-changed into identical phase, the mode that second input electrode and second output electrode be set makes the amplitude at second input electrode and the oscillator of the second output electrode position be phase-changed into identical phase, and differs 180 ° with amplitude at the oscillator of the first input electrode position.Therefore, in this MEMS resonator, input can be used as balance output from each output electrode output to the balance of each input electrode.
In the 4th to the 9th embodiment, by the output electrode that is provided for importing the input electrode of balanced input signal at the phase homophase and is used to export balanced output signal, and do not use balance-non-equilibrium converting means, realized from the purpose of non-equilibrium input and output balance output.
[industrial applicibility]
Resonator of MEMS of the present invention and preparation method thereof goes for frequency filter (RF Wave filter, IF wave filter etc.), oscillator etc.
Claims (19)
1, a kind of micro electric machine system resonator comprises:
The input electrode that is used for input signal;
The output electrode that is used for output signal; And
Face the oscillator of described input electrode and output electrode through a space, and
Described micro electric machine system resonator is characterised in that described output electrode has the electrode that is used to export balanced signal.
2, a kind of micro electric machine system resonator comprises:
The input electrode that is used for input signal;
The output electrode that is used for output signal; And
Face the oscillator of described input electrode and output electrode through a space, and
Described micro electric machine system resonator is characterised in that described output electrode has the electrode that is used to import non-equilibrium signal and output balanced signal.
3, according to the micro electric machine system resonator of claim 2, it is characterized in that:
Described output electrode comprises and is arranged on described input electrode one side and first output electrode and second output electrode that are spaced apart from each other;
Described first output electrode is arranged on 180 ° the position of differing that has with described input electrode; And
Second output electrode is arranged on the mutually identical position that has with described input electrode.
4, according to the micro electric machine system resonator of claim 3, it is characterized in that:
Described first output electrode is arranged on the both sides of described second output electrode.
5, according to the micro electric machine system resonator of claim 2, it is characterized in that:
Described output electrode comprises first output electrode and second output electrode;
Described input electrode comprises a plurality of input electrodes;
It is identical with the quantity of described a plurality of input electrodes that the quantity of described first output electrode is provided as, and described first output electrode and described a plurality of input electrode are arranged alternately, and in 180 ° the position of differing that has with each described input electrode; And
Described second output electrode is arranged on first output electrode position relative with described input electrode with respect to the layout rearmost end that is arranged on described input electrode and described first output electrode, and is arranged on the mutually identical position that has with each described input electrode.
6, a kind of micro electric machine system resonator comprises:
The input electrode that is used for input signal;
The output electrode that is used for output signal; And
Face the oscillator of described input electrode and output electrode through a space, and
Described micro electric machine system resonator in MEMS (micro electro mechanical system) is characterised in that:
Balanced signal is input to described input electrode; And
Balanced signal is exported from described output electrode.
7, according to the micro electric machine system resonator of claim 6, it is characterized in that:
Described input electrode comprises first input electrode and second input electrode;
Described output electrode comprises first output electrode and second output electrode;
The mode that described first input electrode and second input electrode are arranged amplitude at described first input electrode and the oscillator of the second input electrode position that makes is phase-changed into identical phase;
The mode that described first output electrode and second output electrode are arranged amplitude at described first output electrode and the oscillator of the second output electrode position that makes is phase-changed into identical phase, and with differ 180 ° of described oscillator.
8, according to the micro electric machine system resonator of claim 7, it is characterized in that:
Described first input electrode, second output electrode, first output electrode and second input electrode are arranged successively.
9, according to the micro electric machine system resonator of claim 7, it is characterized in that:
Described first input electrode, second input electrode, first output electrode and second output electrode are arranged successively.
10, according to the micro electric machine system resonator of claim 6, it is characterized in that:
Described input electrode comprises a plurality of input electrodes;
Described output electrode comprises a plurality of output electrodes;
The mode that first input electrode of described input electrode and first output electrode of described output electrode the are arranged amplitude at described first input electrode and the oscillator of the first output electrode position that makes is phase-changed into identical phase;
The mode that second input electrode of described input electrode and second output electrode of described output electrode the are arranged amplitude at described second input electrode and the oscillator of the second output electrode position that makes is phase-changed into identical phase, and with differ 180 ° at the oscillator of the described first input electrode position;
The mode that all the other input electrodes of described input electrode are arranged makes described all the other input electrodes have and the mutually identical phase of amplitude at the oscillator of described first input electrode or the second input electrode position; And
The mode that all the other output electrodes of described output electrode are arranged makes described all the other output electrodes have and the mutually identical phase of amplitude at the oscillator of described first output electrode or the second output electrode position.
11, a kind of driving method of micro electric machine system resonator, described micro electric machine system resonator has:
The input electrode that is used for input signal;
The output electrode that is used for output signal; And
Face the oscillator of described input electrode and output electrode through a space, and
The driving method of the described micro electric machine system resonator in MEMS (micro electro mechanical system) is characterised in that, comprises the step of input non-equilibrium signal and output balanced signal.
12, according to the driving method of the micro electric machine system resonator of claim 11, it is characterized in that:
Described output electrode comprises and is arranged on described input electrode one side and first output electrode and second output electrode that are spaced apart from each other;
Described first output electrode is arranged on 180 ° the position of differing that has with described input electrode; And
Second output electrode is arranged on the mutually identical position that has with described input electrode.
13, according to the driving method of the micro electric machine system resonator of claim 12, it is characterized in that:
Described first output electrode is arranged on the both sides of described second output electrode.
14, according to the driving method of the micro electric machine system resonator of claim 11, it is characterized in that:
Described output electrode comprises first output electrode and second output electrode;
Described input electrode comprises a plurality of input electrodes;
It is identical with the quantity of described a plurality of input electrodes that the quantity of described first output electrode is provided as, and described first output electrode and described a plurality of input electrode are arranged alternately, and in 180 ° the position of differing that has with each described input electrode; And
Described second output electrode is arranged on first output electrode position relative with described input electrode with respect to the layout rearmost end that is arranged on described input electrode and described first output electrode, and is arranged on the mutually identical position that has with each described input electrode.
15, a kind of frequency filter is characterized in that comprising micro electric machine system resonator, and described micro electric machine system resonator has:
The input electrode that is used for input signal;
The output electrode that is used for output signal; And
Face the oscillator of described input electrode and output electrode through a space, and
Described micro electric machine system resonator in MEMS (micro electro mechanical system) is characterised in that described output electrode has the electrode that is used to export balanced signal.
16, according to the frequency filter of claim 15, it is characterized in that:
Described output electrode comprises and is arranged on described input electrode one side and first output electrode and second output electrode that are spaced apart from each other;
Described first output electrode is arranged on 180 ° the position of differing that has with described input electrode; And
Second output electrode is arranged on the mutually identical position that has with described input electrode.
17, a kind of frequency filter that comprises micro electric machine system resonator, described micro electric machine system resonator has:
The input electrode that is used for input signal;
The output electrode that is used for output signal; And
Face the oscillator of described input electrode and output electrode through a space, and
Described frequency filter is characterised in that balanced signal is input to described input electrode and balanced signal is exported from described output electrode.
18, according to the frequency filter of claim 17, it is characterized in that:
Described input electrode comprises first input electrode and second input electrode;
Described output electrode comprises first output electrode and second output electrode;
The mode that described first input electrode and described first output electrode are arranged amplitude at described first input electrode and the oscillator of the first output electrode position that makes is phase-changed into identical phase;
The mode that described second input electrode and described second output electrode are arranged amplitude at described second input electrode and the oscillator of the second output electrode position that makes is phase-changed into identical phase, and with differ 180 ° of described oscillator.
19, a kind of preparation method who prepares micro electric machine system resonator, described micro electric machine system resonator has:
The input electrode that is used for input signal;
The output electrode that is used for output signal; And
Face the oscillator of described input electrode and output electrode through a space, and
Described preparation method characteristic is to comprise step:
Form described input electrode and described output electrode simultaneously;
Form first input electrode and second input electrode as described input electrode;
Form first output electrode and second output electrode as described output electrode;
The mode that described first input electrode and described first output electrode are arranged amplitude at described first input electrode and the oscillator of the first output electrode position that makes is phase-changed into identical phase;
The mode that described second input electrode and described second output electrode are arranged amplitude at described second input electrode and the oscillator of the second output electrode position that makes is phase-changed into identical phase, and with differ 180 ° of described oscillator.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003327496A JP4254445B2 (en) | 2003-09-19 | 2003-09-19 | Microelectromechanical system resonator and driving method thereof |
| JP327496/2003 | 2003-09-19 | ||
| JP049133/2004 | 2004-02-25 |
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| CN1853345A true CN1853345A (en) | 2006-10-25 |
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| CN (1) | CN1853345A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100434882C (en) * | 2007-11-20 | 2008-11-19 | 东南大学 | Static excitation resonator capacitor vibration pick-up structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008103777A (en) * | 2006-10-17 | 2008-05-01 | Ritsumeikan | Micromechanical resonator |
| JP5519326B2 (en) | 2010-02-25 | 2014-06-11 | 太陽誘電株式会社 | Filter, duplexer, communication module, communication device |
| JP2013211650A (en) * | 2012-03-30 | 2013-10-10 | Seiko Epson Corp | Mems vibrator and manufacturing method of mems vibrator |
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2003
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100434882C (en) * | 2007-11-20 | 2008-11-19 | 东南大学 | Static excitation resonator capacitor vibration pick-up structure |
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| Publication number | Publication date |
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| JP4254445B2 (en) | 2009-04-15 |
| JP2005094568A (en) | 2005-04-07 |
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