CN1851990A - 带有电吸收光栅结构的q-调制半导体激光器 - Google Patents
带有电吸收光栅结构的q-调制半导体激光器 Download PDFInfo
- Publication number
- CN1851990A CN1851990A CN 200610050757 CN200610050757A CN1851990A CN 1851990 A CN1851990 A CN 1851990A CN 200610050757 CN200610050757 CN 200610050757 CN 200610050757 A CN200610050757 A CN 200610050757A CN 1851990 A CN1851990 A CN 1851990A
- Authority
- CN
- China
- Prior art keywords
- grating
- laser
- modulator
- region
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100507577A CN100377453C (zh) | 2006-05-12 | 2006-05-12 | 带有电吸收光栅结构的q-调制半导体激光器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100507577A CN100377453C (zh) | 2006-05-12 | 2006-05-12 | 带有电吸收光栅结构的q-调制半导体激光器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1851990A true CN1851990A (zh) | 2006-10-25 |
CN100377453C CN100377453C (zh) | 2008-03-26 |
Family
ID=37133462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100507577A Expired - Fee Related CN100377453C (zh) | 2006-05-12 | 2006-05-12 | 带有电吸收光栅结构的q-调制半导体激光器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100377453C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107005019A (zh) * | 2014-09-18 | 2017-08-01 | 费哈激光技术有限责任公司 | 具有声光调制器的调q co2激光材料加工系统 |
CN111326950A (zh) * | 2020-03-03 | 2020-06-23 | 中国科学院半导体研究所 | 基于电极光栅的双波长可调谐半导体激光器 |
CN112164981A (zh) * | 2020-09-23 | 2021-01-01 | 山东大学 | 一种提高半导体激光器小信号强度调制响应带宽的方法 |
CN112600072A (zh) * | 2019-10-01 | 2021-04-02 | Ii-Vi特拉华有限公司 | 分布式反馈加反射激光器 |
CN114094438A (zh) * | 2022-01-24 | 2022-02-25 | 日照市艾锐光电科技有限公司 | 一种双电极共调制发射激光器 |
CN114175427A (zh) * | 2019-08-02 | 2022-03-11 | 三菱电机株式会社 | 半导体激光器装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4896325A (en) * | 1988-08-23 | 1990-01-23 | The Regents Of The University Of California | Multi-section tunable laser with differing multi-element mirrors |
JP3226073B2 (ja) * | 1994-02-18 | 2001-11-05 | キヤノン株式会社 | 偏波変調可能な半導体レーザおよびその使用法 |
US5841799A (en) * | 1994-12-17 | 1998-11-24 | Canon Kabushiki Kaisha | Semiconductor laser, modulation method therefor and optical communication system using the same |
DE19714384A1 (de) * | 1996-03-29 | 1997-10-30 | Hertz Inst Heinrich | Gütegesteuerter Halbleiterlaser |
ATE274760T1 (de) * | 2000-06-02 | 2004-09-15 | Agility Communications Inc | Hochleistungslaser mit gesampeltem gitter und verteiltem bragg-reflektor |
US6822980B2 (en) * | 2001-07-25 | 2004-11-23 | Adc Telecommunications, Inc. | Tunable semiconductor laser with integrated wideband reflector |
-
2006
- 2006-05-12 CN CNB2006100507577A patent/CN100377453C/zh not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107005019A (zh) * | 2014-09-18 | 2017-08-01 | 费哈激光技术有限责任公司 | 具有声光调制器的调q co2激光材料加工系统 |
CN114175427A (zh) * | 2019-08-02 | 2022-03-11 | 三菱电机株式会社 | 半导体激光器装置 |
CN114175427B (zh) * | 2019-08-02 | 2024-04-19 | 三菱电机株式会社 | 半导体激光器装置 |
CN112600072A (zh) * | 2019-10-01 | 2021-04-02 | Ii-Vi特拉华有限公司 | 分布式反馈加反射激光器 |
CN111326950A (zh) * | 2020-03-03 | 2020-06-23 | 中国科学院半导体研究所 | 基于电极光栅的双波长可调谐半导体激光器 |
CN111326950B (zh) * | 2020-03-03 | 2021-06-08 | 中国科学院半导体研究所 | 基于电极光栅的双波长可调谐半导体激光器 |
CN112164981A (zh) * | 2020-09-23 | 2021-01-01 | 山东大学 | 一种提高半导体激光器小信号强度调制响应带宽的方法 |
CN112164981B (zh) * | 2020-09-23 | 2021-12-03 | 山东大学 | 一种提高半导体激光器小信号强度调制响应带宽的方法 |
CN114094438A (zh) * | 2022-01-24 | 2022-02-25 | 日照市艾锐光电科技有限公司 | 一种双电极共调制发射激光器 |
CN114094438B (zh) * | 2022-01-24 | 2022-05-31 | 日照市艾锐光电科技有限公司 | 一种双电极共调制发射激光器 |
Also Published As
Publication number | Publication date |
---|---|
CN100377453C (zh) | 2008-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100428589C (zh) | Q-调制半导体激光器 | |
US7447246B2 (en) | Q-modulated semiconductor laser | |
CA1294353C (en) | Grating coupler with monolithically integrated quantum well index modulator | |
US20060104321A1 (en) | Q-modulated semiconductor laser with electro-absorptive grating structures | |
US5022730A (en) | Wavelength tunable optical filter | |
JP2689698B2 (ja) | αパラメータ符号を反転させた半導体素子 | |
JPH09311304A (ja) | 半導体光変調器及びその製造方法 | |
GB2304423A (en) | Tuneable wavelength laser | |
CN1949607A (zh) | V型耦合腔波长可切换半导体激光器 | |
Djordjev et al. | Active semiconductor microdisk devices | |
CN1851990A (zh) | 带有电吸收光栅结构的q-调制半导体激光器 | |
CN200987037Y (zh) | 一种带有电吸收光栅结构的q-调制半导体激光器 | |
CN102751659A (zh) | 一种可调谐半导体激光器 | |
Calo et al. | Active InGaAsP/InP photonic bandgap waveguides for wavelength-selective switching | |
JPH0992933A (ja) | 波長可変半導体レーザ | |
CN200953431Y (zh) | Q-调制半导体激光器 | |
GB2437593A (en) | A q-modulated semiconductor laser | |
Moshfe et al. | Fully integrated 3-bit all-optical analog to digital converter based on photonic crystal semiconductor optical amplifier | |
JP3014039B2 (ja) | 光パルス分散補償器、及びこれを用いた光パルス圧縮器、半導体短パルスレーザ素子並びに光通信システム | |
Hamacher et al. | Active ring resonators based on GaInAsP/InP | |
GB2437784A (en) | A Q-modulated semiconductor laser | |
Sneh et al. | Polarization-insensitive InP-based MQW digital optical switch | |
KR100523080B1 (ko) | 편향기 집적 동적 단일모드 레이저 다이오드를 이용한변조 장치 | |
Liu et al. | Liquid Crystal Tunable Narrow Linewidth Filter Based On Subwavelength Gratings Reflector | |
JP2006047895A (ja) | フォトニック結晶半導体デバイス及び半導体レーザ集積デバイス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Zhejiang Chuangjia Digital Technology Co., Ltd. Assignor: He Jianjun Contract fulfillment period: 2009.9.2 to 2016.9.2 contract change Contract record no.: 2009990001165 Denomination of invention: Q-modulation semiconductor laser with electric absorption grating structure Granted publication date: 20080326 License type: Exclusive license Record date: 20091020 |
|
LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.9.2 TO 2016.9.2; CHANGE OF CONTRACT Name of requester: ZHEJIANG CHUANGJIA DIGIT TECHNOLOGY CO., LTD. Effective date: 20091020 |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080326 Termination date: 20110512 |