CN1851940A - 发光二极管 - Google Patents

发光二极管 Download PDF

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Publication number
CN1851940A
CN1851940A CNA2005100343619A CN200510034361A CN1851940A CN 1851940 A CN1851940 A CN 1851940A CN A2005100343619 A CNA2005100343619 A CN A2005100343619A CN 200510034361 A CN200510034361 A CN 200510034361A CN 1851940 A CN1851940 A CN 1851940A
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China
Prior art keywords
light
emitting diode
electrode
backlight unit
transmission package
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Pending
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CNA2005100343619A
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English (en)
Inventor
余泰成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CNA2005100343619A priority Critical patent/CN1851940A/zh
Priority to US11/377,696 priority patent/US20060237736A1/en
Publication of CN1851940A publication Critical patent/CN1851940A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明涉及一种发光二极管。该发光二极管包括:具有一承载部的一第一电极;一第二电极;配置在所述承载部上的一发光二极管芯片,该发光二极管芯片分别与所述第一电极及所述第二电极电性连接;以及具有透光面的一透光封装体,该透光封装体用于封装所述发光二极管芯片、所述第一电极与所述第二电极,其中,该透光封装体的透光面为一非球面。利用非球面透镜能有效消除光学像差的功能来提升发光二极管的发光亮度。

Description

发光二极管
【技术领域】
本发明涉及一种发光二极管,尤其涉及一种具有高亮度的发光二极管。
【背景技术】
发光二极管(Light Emitting Diode,LED)是利用半导体材料中的电子与空穴结合时能量带(Energy Gap)位阶的改变,以发光形式,释放出能量。目前在市场上应用的发光二极管所发出的光为红、绿、蓝及白光等多种。由于发光二极管具有体积小、寿命长、驱动电压低、耗电量低、反应速率快、耐震性佳等优点,可应用在银行汇率看板、汽车第三煞车灯、交通标志、户外信息看板与日常照明等各种应用领域中。
业界要提升发光二极管的亮度,一般通过两种方法:1)提升发光二极管芯片的发光效率,其通过提升发光二极管芯片的光电转换效率或增加发光二极管芯片的大小;2)提升发光二极管芯片的光学利用率,其通过发光二极管外部封装结构,减少光的损耗。
目前一种炮弹型白光发光二极管10的结构如图1所示。该结构主要是利用荧光粉与环氧树脂混合而形成荧光粉树脂101,将荧光粉树脂填充在电极脚架上的凹孔中并覆盖配置在该凹孔内的发光二极管芯片102,利用芯片的发光与荧光粉层的能量转换,从而得到发白光的发光二极管,且通过嵌设在环氧树脂内的喇叭状反射镜103,藉此减少发光二极管的边际光损失,提升发光二极管芯片的光学利用率。
但是,上述结构发光二极管的透光封装体104的透光面105为一球面,容易造成光学像差。当沿发光二极管出射光线的相反方向看时,会造成发光二极管的发光点发散,从而造成发光点亮度的下降,影响其照明效果。
因此,有必要提供一种能有效消除光学像差的发光二极管。
【发明内容】
以下,将以实施例说明一种发光二极管,其能有效消除光学像差,进而提高发光二极管的发光亮度。
为实现上述内容,提供一种发光二极管,包括:
具有一承载部的一第一电极;
相对于所述第一电极设置的一第二电极;
配置在所述承载部上的一发光二极管芯片,该发光二极管芯片分别与所述第一电极及所述第二电极电性连接;
以及
一透光封装体,用于封装所述发光二极管芯片、所述第一电极与所述第二电极;该透光封装体具有一透光面,其为一非球面。
所述的非球面为椭圆面、双曲面或抛物面。
所述的透光封装封体内镶嵌有曲面反射镜,藉此在有限的封装空间得到较大的反射镜反射面积。
所述的反射镜上涂布有反射膜层。
优选的,所述的反射膜层材料为金属,以增强发光二极管散热的功效。
所述的反射膜层是通过蒸镀的方法获得。
所述的透光封装体的材料为树脂。
所述的树脂可为聚酯树脂、丙烯酸树脂、氟化树脂或氯乙烯树脂。
相对于现有技术,本技术方案所提供的发光二极管,通过对其透光封装体透光面的变更,采用非球面,能有效消除光学像差,且采用曲面反射镜能在相同大小的封装空间内增大反射面积,从而得到更多的反射光线,从而提高发光二极管的发光亮度。
【附图说明】
图1为现有技术中一种发光二极管的结构示意图;
图2为本发明提供的一种发光二极管的结构示意图。
【具体实施方式】
以下将结合附图对本发明作进一步的详细说明。
请参阅图2,本发明提供一种发光二极管20,其包括:一第一电极202;一第二电极203;一发光二极管芯片204;以及一透光封装体205。
该第一电极202具有一承载部201,其与该第二电极203相对设置。该发光二极管芯片204配置在所述承载部201上并与所述第一电极202电性连接。所述第二电极203藉由金属导线与所述发光二极管芯片204电性连接。所述电性连接可通过粘结或烧结的方法来形成。
该透光封装体205用于密封封装所述发光二极管芯片204、所述第一电极202及所述第二电极203,以保护所述发光二极管芯片204的正常工作。另外,所述透光封装体205可仅密封封装所述发光二极管芯片204与所述第一电极202及所述第二电极203的电性连接部分,及所述发光二极管芯片204。
所述的透光封装体205的材料可选用聚酯树脂(Polyester Resins),如聚乙烯对苯二甲酸酯(Polyethylene Terephthalate,PET)、聚二酸二乙酯(Polyethylene Naphthalate,PEN);丙烯酸树脂(Acrylic Resins),如聚甲基丙烯酸甲酯(Polymethyl Methacrylate)、改良的聚甲基丙烯酸甲酯(ModifiedPolymethyl Methacrylate);氟化树脂(Fluororesins),如聚偏氟乙烯树脂(Polyvinylidene Fluoride,PVDF);氯乙烯树脂(Vinyl Chloride Resins),如氯乙烯共聚物(Vinyl Chloride Compolymers)等等,利用非球面透镜模具通过射出成型方法形成该透光封装体205,从而可在其透光面206形成一非球面。
该透光封装体205的透光面206为一非球面。非球面的表面不是球面,而是二次曲面或高次曲面,一般情况下是二次曲线的旋转面。例如在本实施例中,所述的非球面为椭圆面。当然,所述的非球面也可为其它形状,如双曲面或抛物面,而不限于椭圆面。非球面透镜能有效消除光学像差,成像与聚光效果均明显优于球面透镜。随着计算机技术与高精数控工艺的出现与发展,非球面透镜的设计与加工变得容易,使其制造成本下降。
在本实施例中,所述透光封装体205的透光面206设计为向所述发光二极管芯片204光线出射方向凸出的形状,另外,该透光面206设计也可采用向所述发光二极管芯片204光线出射方向相反的方向凸出的形状。
在所述的透光封装封体205内还镶嵌有曲面反射镜207,相对于现有技术的喇叭状反射镜,该曲面反射镜207能在相同大小的封装空间内增大反射面积,从而得到更多的反射光线。所述的反射镜上涂布有反射膜层208,该反射膜层208是通过蒸镀的方法获得,其作用是增加反射镜的反射率,减少反射时光的能量损失。优选的,所述的反射膜层材料为金属。可以理解的是,所述的金属应具有良好的反射率与导热性能,在减少反射时光的能量损失的同时,也能增强该发光二极管20的散热功效。
本实施例提供的发光二极管,通过对其透光封装体透光面的变更,采用非球面,能有效消除光学像差,且采用曲面反射镜能在相同大小的封装空间内增大反射面积,从而得到更多的反射光线,从而提高发光二极管的发光亮度。
另外,本领域技术人员还可在本发明精神内做其他变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。

Claims (9)

1.一种发光二极管,包括:
具有一承载部的一第一电极;
相对于所述第一电极设置的一第二电极;
配置在所述承载部上的一发光二极管芯片,该发光二极管芯片分别与所述第一电极及所述第二电极电性连接;
以及具有透光面的一透光封装体,该透光封装体用于封装所述发光二极管芯片、所述第一电极与所述第二电极;
其特征在于:该透光封装体的透光面为一非球面。
2.如权利要求1所述的发光二极管,其特征在于,所述的非球面透镜为椭圆面、双曲面或抛物面。
3.如权利要求1所述的发光二极管,其特征在于,所述的透光封装体内镶嵌有曲面反射镜。
4.如权利要求3所述的发光二极管,其特征在于,所述的反射镜内涂布有反射膜层。
5.如权利要求4所述的发光二极管,其特征在于,所述的反射膜层是通过蒸镀的方法获得。
6.如权利要求4所述的发光二极管,其特征在于,所述的反射膜层材料为金属。
7.如权利要求1所述的发光二极管,其特征在于,所述的透光封装体的材料为树脂。
8.如权利要求7所述的发光二极管,其特征在于,所述的树脂可为聚酯树脂、丙烯酸树脂、氟化树脂或氯乙烯树脂。
9.如权利要求1所述的发光二极管,其特征在于,所述的透光封装体仅封装所述发光二极管芯片与所述第一电极及所述第二电极的电性连接部分,以及所述发光二极管芯片。
CNA2005100343619A 2005-04-22 2005-04-22 发光二极管 Pending CN1851940A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNA2005100343619A CN1851940A (zh) 2005-04-22 2005-04-22 发光二极管
US11/377,696 US20060237736A1 (en) 2005-04-22 2006-03-16 Light-emitting diode and method for improving emitting directivity of light-emitting chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2005100343619A CN1851940A (zh) 2005-04-22 2005-04-22 发光二极管

Publications (1)

Publication Number Publication Date
CN1851940A true CN1851940A (zh) 2006-10-25

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CN (1) CN1851940A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101487579B (zh) * 2008-01-17 2010-06-02 宁波燎原灯具股份有限公司 适用于led路灯的透镜系统
CN103441209A (zh) * 2013-08-27 2013-12-11 深圳雷曼光电科技股份有限公司 户外显示屏及其led封装器件

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US6115184A (en) * 1998-11-13 2000-09-05 Xerox Corporation Light collector for an LED array
EP1213773B1 (en) * 1999-07-26 2009-12-16 Labosphere Institute Bulk lens, light emitting body, lighting device and optical information system
US6550953B1 (en) * 1999-08-20 2003-04-22 Toyoda Gosei Co. Ltd. Light emitting diode lamp device
WO2002075785A2 (en) * 2001-03-16 2002-09-26 Peregrine Semiconductor Corporation Coupled optical and optoelectronic devices, and method of making the same
JP3753011B2 (ja) * 2001-04-11 2006-03-08 豊田合成株式会社 反射型発光ダイオード
TW552726B (en) * 2001-07-26 2003-09-11 Matsushita Electric Works Ltd Light emitting device in use of LED
US7061690B1 (en) * 2005-02-18 2006-06-13 Luminator Holding, L.P. Apparatus for establishing substantially uniform distribution of light

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101487579B (zh) * 2008-01-17 2010-06-02 宁波燎原灯具股份有限公司 适用于led路灯的透镜系统
CN103441209A (zh) * 2013-08-27 2013-12-11 深圳雷曼光电科技股份有限公司 户外显示屏及其led封装器件
CN103441209B (zh) * 2013-08-27 2016-08-17 深圳雷曼光电科技股份有限公司 户外显示屏及其led封装器件

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