CN1851856A - Reaction chamber for semiconductor treatment - Google Patents
Reaction chamber for semiconductor treatment Download PDFInfo
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- CN1851856A CN1851856A CN 200510126373 CN200510126373A CN1851856A CN 1851856 A CN1851856 A CN 1851856A CN 200510126373 CN200510126373 CN 200510126373 CN 200510126373 A CN200510126373 A CN 200510126373A CN 1851856 A CN1851856 A CN 1851856A
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- gas
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- vacuum pump
- distributing device
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Abstract
This invention relates to a reacting chamber used in processing semiconductors including a gas distributing device, a top cover of a reacting chamber, a reacting chamber, a static chuck and a vacuum pump, in which, the static chuck is used in supporting the semiconductor wafer, the pump is used in getting low gas pressure for the chamber, the gas distributing device includes two gas inputs controlling the pressure and flow separately, the first A is far from the pump inlet to control the distribution of the gas close to the vacuum pump in the chamber and the second B is close to the vacuum pump inlet to control the distribution of the gas close to the pump and the uniform gas distribution on the wafer can be got on the entire wafer by adjusting the parameter of the gas distributing device.
Description
Technical field
The present invention relates to the reative cell of semiconductor machining etching machine, particularly the reative cell with the input of two-way gas of semiconductor etching machine.
Background technology
In semiconductor processing equipment (etching machine), add energy by gas and make gas ionization produce plasma to lower pressure, plasma is used for the etching semiconductor wafer.In order to make wafer obtain uniform etch rate, require plasma evenly to distribute in wafer surface, the effect of gas distributing device is exactly the uniform distribution etching gas.
Figure 1 shows that a kind of plasma processing apparatus.1 is the gas distribution portion, and 2 is the plasma-reaction-chamber loam cake, and 3 is plasma-reaction-chamber, and 4 is electrostatic chuck, is used for supporting semiconductor wafers, and 5 is semiconductor wafer, and 6 for making plasma-reaction-chamber obtain hypobaric vacuum pump.Gas enters from the inlet of gas distribution portion 1, and the outlet of gas distribution portion 1 is designed to truncated conical shape, so that gas can evenly flow to all directions.
There is following problem in this gas distribution structure:
1, with the outlet is the center, identical distribution of gas arranged, and at the radial gas skewness, promptly at the center and the ambient gas skewness of semiconductor wafer circumferential.
2, the distribution of gas in the vacuum pump article on plasma precursor reactant chamber is influential.Be divided into modes such as lower pumping mode and side lower pumping in the position of reative cell difference according to vacuum pump, the position of Fig. 1 intermediate pump is a kind of side lower pumping mode commonly used, and vacuum pump is put at the side lower of reative cell.In reative cell, relatively large near the position gas flow rates of vacuum pump inlet, and less relatively away from the gas flow rates of vacuum pump inlet position.The gas distributing device of Fig. 1 can not compensate the influence of vacuum pump.
Fig. 2 is the plasma processing apparatus of the another kind of gas method of salary distribution.1 is the gas distribution portion, and 2 is the plasma-reaction-chamber loam cake, and 3 is the plasma reaction process chamber, and 4 is electrostatic chuck, is used for supporting semiconductor wafers, and 5 is semiconductor wafer, and 6 for making plasma-reaction-chamber obtain hypobaric vacuum pump.The gas distribution portion is the two-region control type, in order to overcome among Fig. 1 the gas distribution portion in the center and the ambient gas problem of uneven distribution of wafer, gas is divided into two-way, and one tunnel control gaseous is in the distribution of center wafer, and one tunnel control gaseous is in wafer distribution on every side.Two-way gas is controlled pressure and flow separately, can make the entire wafer surface obtain uniform distribution of gas.
Gas distributing device among Fig. 2 can not compensate the influence of vacuum pump to distribution of gas, make in the reative cell near and inhomogeneous away from the position distribution of gas of vacuum pump.
Summary of the invention
The technical problem that solves
The technical problem that will solve of the present invention is the influence of compensation vacuum pump to distribution of gas, and a kind of reative cell that is used for semiconductor processes is provided.
Technical scheme
The invention provides the reative cell that is used for semiconductor processes, comprise gas distributing device, reative cell loam cake, reaction chamber, electrostatic chuck and vacuum pump, electrostatic chuck is used for supporting semiconductor wafers, and vacuum pump is used to make reative cell to obtain low pressure.For making the gas in the reaction chamber obtain evenly to distribute, gas distributing device has the input of two-way gas, can distinguish controlled pressure and flow.The input of first via gas is away from vacuum pump inlet, in the control plasma reaction chamber away from the distribution of gas of vacuum pump one side, the input of the second road gas is near vacuum pump inlet, the distribution of gas of close vacuum pump one side in the control plasma reaction chamber, plasma zone, wafer top is divided into A1, A2, B1, four zones of B2 can make by the parameter of adjusting gas distributing device to obtain uniform distribution of gas on the entire wafer.
Beneficial effect
In the lower pumping mode, the present invention can compensate the influence of distribution of gas in the vacuum pump article on plasma reative cell, and reacting gas is distributed on semiconductor wafer uniformly, has uniform etch rate man-hour thereby semiconductor equipment (etching machine) is added.
Description of drawings
Fig. 1 is existing reaction chamber structure schematic diagram;
Fig. 2 is existing reaction chamber structure schematic diagram with gas distributing device;
Fig. 3 is the reaction chamber structure schematic diagram of one embodiment of the invention;
Fig. 4 is a control gaseous distribution schematic diagram of the present invention.
Fig. 5 is the gas distributing device schematic diagram of the embodiment of the invention
Fig. 6 is the gas distributing device end view of the embodiment of the invention
Fig. 7 is the gas distributing device I-I profile of the embodiment of the invention
Among the figure: 1, gas distribution portion; 2, plasma-reaction-chamber loam cake; 3, plasma-reaction-chamber; 4, electrostatic chuck; 5, semiconductor wafer; 6, vacuum pump; A, the input of first via gas; B, the input of the second road gas; The distribution of gas scope of A1, A2, first via gas input control; The distribution of gas scope of B1, B2, the second road gas input control.
Embodiment
Following examples are used to illustrate the present invention; but be not used for limiting the scope of the invention; the those of ordinary skill in relevant technologies field; under the situation that does not break away from the spirit and scope of the present invention; can also make various variations and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be limited by every claim.
The invention provides a kind of reative cell that is used for semiconductor processes, as shown in Figure 3.Reative cell comprises gas distributing device 1, gas ions reative cell loam cake 2, reaction chamber 3, electrostatic chuck 4 and vacuum pump 6, and semiconductor wafer 5 places when processed on the electrostatic chuck 4.Fig. 5, Fig. 6, Fig. 7 are the concrete structure of gas distributing device, and gas distributing device 1 is provided with first via gas input A and the second road gas input B, and the input of two-way gas can be distinguished controlled pressure and flow.Away from the distribution of gas of vacuum pump one side, the second road gas is controlled the distribution of gas of close vacuum pump one side in the reaction chamber in the first via gas control reaction chamber.As shown in Figure 4, two-way gas input is divided into A1 with plasma zone, wafer top, A2, and B1, four zones of B2 can make by the parameter of adjusting gas distributing device to obtain uniform distribution of gas on the entire wafer.
Claims (2)
1, a kind of reative cell that is used for semiconductor processes, comprise gas distributing device (1), be installed in reative cell loam cake (2) middle part, it is characterized in that, described gas distributing device (1) is provided with two-way gas input (A, B), wherein first via gas input (A) is away from vacuum pump (6) inlet, and the second road gas input (B) is near vacuum pump (6) inlet.
2, the reative cell that is used for semiconductor processes as claimed in claim 1 is characterized in that, the pressure and the flow of its input gas controlled in described two-way gas input (A, B) respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263734A CN100377300C (en) | 2005-12-08 | 2005-12-08 | Reaction chamber for semiconductor treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263734A CN100377300C (en) | 2005-12-08 | 2005-12-08 | Reaction chamber for semiconductor treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1851856A true CN1851856A (en) | 2006-10-25 |
| CN100377300C CN100377300C (en) | 2008-03-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101263734A Active CN100377300C (en) | 2005-12-08 | 2005-12-08 | Reaction chamber for semiconductor treatment |
Country Status (1)
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| CN (1) | CN100377300C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101207034B (en) * | 2006-12-20 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber top cover and reaction chamber containing said top cover |
| CN101355009B (en) * | 2007-07-23 | 2011-11-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching device |
| CN103203590A (en) * | 2012-01-17 | 2013-07-17 | 游利 | Novel gas distributor processing technique of dielectric etching machine |
| CN105448770B (en) * | 2014-07-25 | 2018-05-08 | 北京北方华创微电子装备有限公司 | For the inlet duct of semiconductor equipment and using its reaction chamber |
| CN109935541A (en) * | 2019-03-13 | 2019-06-25 | 江苏鲁汶仪器有限公司 | Reaction chamber |
| CN112527025A (en) * | 2019-09-19 | 2021-03-19 | 夏泰鑫半导体(青岛)有限公司 | Air pressure control device and air pressure adjusting method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5885358A (en) * | 1996-07-09 | 1999-03-23 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
| CN1186873A (en) * | 1996-11-26 | 1998-07-08 | 西门子公司 | Distribution plate for reaction chamber with multiple gas inlets and separate mass flow control loops |
| KR100302609B1 (en) * | 1999-05-10 | 2001-09-13 | 김영환 | Temperature controllable gas distributor |
-
2005
- 2005-12-08 CN CNB2005101263734A patent/CN100377300C/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101207034B (en) * | 2006-12-20 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber top cover and reaction chamber containing said top cover |
| CN101355009B (en) * | 2007-07-23 | 2011-11-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching device |
| CN103203590A (en) * | 2012-01-17 | 2013-07-17 | 游利 | Novel gas distributor processing technique of dielectric etching machine |
| CN103203590B (en) * | 2012-01-17 | 2015-12-02 | 游利 | A kind of new dielectric etch machine gas distributor processing technology |
| CN105448770B (en) * | 2014-07-25 | 2018-05-08 | 北京北方华创微电子装备有限公司 | For the inlet duct of semiconductor equipment and using its reaction chamber |
| CN109935541A (en) * | 2019-03-13 | 2019-06-25 | 江苏鲁汶仪器有限公司 | Reaction chamber |
| CN112527025A (en) * | 2019-09-19 | 2021-03-19 | 夏泰鑫半导体(青岛)有限公司 | Air pressure control device and air pressure adjusting method |
| CN112527025B (en) * | 2019-09-19 | 2023-03-17 | 夏泰鑫半导体(青岛)有限公司 | Air pressure control device and air pressure adjusting method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100377300C (en) | 2008-03-26 |
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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