CN1848684A - Drive circuit for switching component - Google Patents
Drive circuit for switching component Download PDFInfo
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- CN1848684A CN1848684A CN 200510065020 CN200510065020A CN1848684A CN 1848684 A CN1848684 A CN 1848684A CN 200510065020 CN200510065020 CN 200510065020 CN 200510065020 A CN200510065020 A CN 200510065020A CN 1848684 A CN1848684 A CN 1848684A
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- 238000001514 detection method Methods 0.000 claims abstract description 37
- 230000000052 comparative effect Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 abstract 1
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- 238000010586 diagram Methods 0.000 description 8
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Abstract
A driving circuit of switching over element is prepared as generating the first driving current by supply circuit in responding a control signal, amplifying the first driving current to generate the second driving current by amplifying circuit, exerting the second driving current on output end to make driving voltage be changed, coupling detection circuit with output end to generate detection signal representing driving voltage, using regulation circuit of differential comparator to dynamically regulate size of the first driving current according to detection signal.
Description
Technical field
The present invention relates to a kind of drive circuit, relate in particular to a kind of high speed and high efficiency drive circuit that is used to drive switching device.
Background technology
Fig. 1 shows the known detailed circuit diagram that is used for the drive circuit 10 of switching device.Drive circuit 10 is from output OUT supply driving voltage V
OSwitching device (not shown) to institute's desire driving.For example, switching device is made of nmos pass transistor or PMOS transistor.
As shown in the figure, as control voltage V
INWhen being in low level state, transistor Q1 conducting and transistor Q3 is provided needed base current.As a result, driving voltage V
OBe pulled to and approximate supply-voltage source V greatly
CCDeduct the collector electrode of transistor Q3 and the saturation voltage V between emitter
CE, sat (Q3), that is V
CC-V
CE, sat (Q3)If this moment driving voltage V
OBe supplied to the grid of nmos pass transistor switching device, then can make the switching device conducting.As control voltage V
INWhen being in high level state, transistor Q2 conducting and transistor Q4 is provided needed base current.As a result, driving voltage V
OBe pulled down to the saturation voltage V between the collector emitter that approximates transistor Q4 greatly
CE, sat (Q4)If this moment driving voltage V
OBe supplied to the grid of nmos pass transistor switching device, switching device is ended.
For the drive circuit of higher service speed with better operating efficiency is provided, developed some technology and circuit kenel at present, for example United States Patent (USP) the 5th, 939, No. 907 and the 6th, 130, No. 575 revealers of institute etc., these technical literatures are all complete to be incorporated into herein as a reference.
Summary of the invention
One object of the present invention is to provide a kind of drive circuit, is used to drive switching device, to reach driving operation at a high speed.
Another object of the present invention is to provide a kind of drive circuit, be used to drive switching device, to reach high efficiency driving operation.
According to one aspect of the present invention, a kind of drive circuit is provided, switch element in order to apply driving voltage to from output.Drive circuit has a upside driver element and side drive unit once.In response to a upside control signal, the upside driver element is applied to output to improve driving voltage with the upside drive current.In response to a downside control signal, the downside driver element is applied to output to reduce driving voltage with the downside drive current.
This upside driver element has upside supply circuit, upside amplifying circuit, upside testing circuit and upside and adjusts circuit.The upside supply circuit produces the first upside drive current in response to the upside control signal.The upside amplifying circuit amplifies the first upside drive current to produce the second upside drive current.The second upside drive current is applied to output makes driving voltage rise.The upside testing circuit is coupled in output, in order to produce the upside detection signal of representing driving voltage.Upside is adjusted circuit and is implemented by a upside differential comparator, in order to dynamically to adjust the size of the first upside drive current based on the comparative result of a upside detection signal and a upside critical voltage of being scheduled to.
This downside driver element has downside supply circuit, downside amplifying circuit, downside testing circuit and downside and adjusts circuit.The downside supply circuit produces the first downside drive current in response to the downside control signal.The downside amplifying circuit amplifies the first downside drive current to produce the second downside drive current.The second downside drive current is applied to output makes driving voltage descend.The downside testing circuit is coupled in output, in order to produce the downside detection signal of representing driving voltage.Downside is adjusted circuit and is implemented by a downside differential comparator, in order to dynamically to adjust the size of the first downside drive current based on the comparative result of a downside detection signal and a downside critical voltage of being scheduled to.
Description of drawings
Fig. 1 shows the known detailed circuit diagram that is used for the drive circuit of switching device;
Fig. 2 shows according to the circuit block diagram that is used for the drive circuit of switching device of the present invention;
Fig. 3 shows according to the operation waveform sequential chart that is used for the drive circuit of switching device of the present invention;
Fig. 4 shows the detailed circuit diagram according to an example of upside driver element of the present invention;
Fig. 5 shows the detailed circuit diagram according to an example of downside driver element of the present invention.
Detailed Description Of The Invention
Explanation hereinafter and accompanying drawing will make aforementioned and other purposes of the present invention, feature, more obvious with advantage.Here with reference to graphic detailed description according to the preferred embodiments of the present invention.
Fig. 2 shows according to the circuit block diagram that is used for the drive circuit 20 of switching device SW of the present invention.Fig. 3 shows according to the operation waveform sequential chart that is used for the drive circuit 20 of switching device of the present invention.As shown in the figure, constituted by a upside driver element 20H and side drive unit 20L once according to drive circuit 20 of the present invention.In response to upside control signal INH, upside driver element 20H is activated and applies the driving voltage V with high level from output OUT
OTo switching device SW.When switching device SW is implemented by nmos pass transistor, the driving voltage V of high level
OMay command switching device SW is in conducting state.In response to downside control signal INL, downside driver element 20L is activated and applies from output OUT has low level driving voltage V
OTo switching device SW.When switching device SW is implemented by nmos pass transistor, low level driving voltage V
OMay command switching device SW is in cut-off state.Upside control signal INH starts the time of upside driver element 20H and the time of downside control signal INL startup downside driver element 20L is configured to non-overlapping copies each other.Therefore, control signal INH and INL can drive switching device SW effectively via drive circuit 20, make it to operate in conducting or cut-off state.
Particularly, upside driver element 20H has a upside supply circuit 21H, a upside amplifying circuit 22H, a upside testing circuit 23H and upside adjustment circuit 24H.At first, upside control signal INH starts upside supply circuit 21H, to supply a upside drive current IH
aBased on upside drive current IH
a, upside amplifying circuit 22H produces a upside drive current IH who increases
b, in order to be applied to output OUT.As a result, the upside drive current IH of increase
bCan make driving voltage V more quickly
ORise, thereby improved the speed that makes switching device SW form conducting state.
Upside circuit for detecting 23H is coupled in output OUT, in order to produce a upside detection signal VH, the driving voltage V that its representative is measured
OIn response to upside detection signal VH, upside is adjusted circuit 24H control upside supply circuit 21H, so that dynamically adjust upside drive current IH
aSize.Particularly, convert initial stage of conducting state, driving voltage V at switching device SW to from cut-off state
OMust begin to rise from low level, need this moment the bigger drive current of supply to increase the speed that driving voltage rises.In the case, upside is adjusted circuit 24H permission upside supply circuit 21H and is supplied upside drive current IH as much as possible
aIn case driving voltage V
OMeet or exceed a predetermined upside critical voltage VH
ThThe time, mean driving voltage V
OBecome enough big and can make switching device SW enter the stable state of conducting effectively.In the case, upside adjustment circuit 24H promptly stops the upside drive current IH that upside supply circuit 21H is supplied
a, stop upside drive current IH jointly
bGeneration.Therefore, upside is adjusted the current drain that circuit 24H saves upside driver element 20H effectively, reaches high efficiency driving operation.
Particularly, downside driver element 20L has a downside supply circuit 21L and is sidelong big circuit 22L, a downside testing circuit 23L, downside adjustment circuit 24L once.At first, downside control signal INL starts downside supply circuit 21L, to supply the L of side drive electric current I
aBased on downside drive current IL
a, downside amplifying circuit 22L produces a downside drive current IL who increases
b, in order to be applied to output OUT.As a result, the downside drive current IL of increase
bCan make driving voltage V more quickly
ODescend, thereby improved the speed that makes switching device SW form cut-off state.
Downside testing circuit 23L is coupled in output OUT, in order to produce detection signal VL, the driving voltage V that its representative is measured
OIn response to downside detection signal VL, downside is adjusted circuit 24L control downside supply circuit 21L, so that dynamically adjust downside drive current IL
aSize.Particularly, convert initial stage of cut-off state, driving voltage V at switching device SW to from conducting state
OMust begin to descend from high level, need this moment the bigger drive current of supply to increase the speed that driving voltage descends.In the case, downside is adjusted circuit 24L permission downside supply circuit 21L and is supplied downside drive current IL as much as possible
aIn case driving voltage V
OReach or be lower than a predetermined downside critical voltage VL
ThThe time, mean driving voltage V
OBecome enough little and can make switching device SW enter the stable state of ending effectively.In the case, downside adjustment circuit 24L promptly stops the downside drive current IL that downside supply circuit 21L is supplied
a, stop downside drive current IL jointly
aGeneration.Therefore, downside is adjusted the current drain that circuit 24L saves downside driver element 20L effectively, reaches high efficiency driving operation.
Fig. 4 shows the detailed circuit diagram according to the example of upside driver element 20H of the present invention.When upside control signal INH was in low level, transistor H1 ended, and made current source I1 supply upside drive current IH
aFlow through transistor H2 and reach the base stage of transistor H3.Upside drive current IH
aAmplify β via transistor H3 and be supplied to the base stage of transistor H4 so that amplify β more doubly after doubly.As a result, the upside drive current IH of the increase of supplying from the collector electrode of transistor H4
bApproximate original upside drive current IH greatly
aβ
2Doubly.The upside drive current IH that increases
bCan make driving voltage V more quickly
ORise, thereby improved the speed that makes switching device SW form conducting state.
In upside testing circuit 23H, transistor H5 and current source I2 constitute a level shifting circuit.The base stage of transistor H5 is coupled to output OUT, in order to detect driving voltage V
O, and in its emitter-base bandgap grading place generation upside detection signal VH.Therefore, upside detection signal VH equals driving voltage V
ODeduct the voltage V between the Base-Emitter of transistor H5
BE (H5)
Upside is adjusted circuit 24H and is implemented by a differential comparator (Differential Comparator), in order to compare upside detection signal VH and predetermined upside critical voltage VH
ThBased on upside detection signal VH and predetermined upside critical voltage VH
ThBetween comparative result, upside is adjusted circuit 24H and is dynamically adjusted upside drive current IH
aSize.Particularly, the base stage of upside detection signal VH oxide-semiconductor control transistors H6, and upside critical voltage VH
ThThe base stage of oxide-semiconductor control transistors H7.The emitter coupled in common of transistor H6 and H7 is in current source I3.Heal when big as upside detection signal VH, be dispensed among the current source I3 the more by the electric current of the formed current path of transistor H6.When upside detection signal VH surpasses upside critical voltage VH
ThThe time, the electric current that current source I3 is supplied is then flowed through fully by the formed current path of transistor H6.Because the collector coupled of transistor H6 is in the current source I1 of upside supply circuit 21H, so the current flowing of transistor H6 (Current Sink) causes upside drive current IH
aReduce mat and reaching according to driving voltage V
ODynamically adjust upside drive current IH
aEffect.
In one embodiment, current source I3 is designed to more than or equal to current source I1, makes that working as upside detection signal VH surpasses upside critical voltage VH
ThThe time, the electric current that current source I1 is supplied is taken away by transistor H6 fully, thereby can't continue to supply upside drive current IH
aTherefore, upside is adjusted circuit 24H and is saved upside drive current IH effectively
aSupply, reach high efficiency driving operation.In another embodiment, upside critical voltage VH
ThBe configured to make the voltage V between the collector emitter of transistor H4
CE (H4)Enough avoid transistor H4 to enter dark saturation region (Deep Saturation Region) greatly, use and improve driving voltage V
OReaction speed when conversion.
At upside drive current IH
aAfter the stop supplies, resistance R 3 provides a discharge path to give transistor H3, and resistance R 4 provides another discharge path to give transistor H4, guarantees that upside amplifying circuit 22H is maintained at the not closed condition of consumed power.In addition, for guaranteeing that transistor H6 does not surpass upside critical voltage VH as yet at upside detection signal VH
ThBefore still can keep normal operation, transistor H2 is coupled in transistor H6 and makes voltage V between the collector emitter of transistor H6
CE (H6)Equal the voltage V between the emitter base of transistor H2
EB (H2)
Fig. 5 shows the detailed circuit diagram according to the example of downside driver element 20L of the present invention.When downside control signal INL was in low level, transistor L1 ended, and made current source I4 supply downside drive current IL
aBase stage to transistor L2.Downside drive current IL
aAmplify β via transistor L2 and be supplied to the base stage of transistor L3 so that amplify β more doubly after doubly.As a result, the downside drive current IL of the increase of the collector electrode of inflow transistor L3
bApproximate original downside drive current IL greatly
aβ
2Doubly.The downside drive current IL that increases
bCan make driving voltage V more quickly
ODescend, thereby improved the speed that makes switching device SW form cut-off state.
In downside testing circuit 23L, transistor L4 and current source I5 constitute a level shifting circuit.The base stage of transistor L4 is coupled to output OUT, in order to detect driving voltage V
O, and in its emitter place generation downside detection signal VL.Therefore, downside detection signal VL equals driving voltage V
OAdd the voltage V between the emitter base of transistor L4
EB (L4)
Downside is adjusted circuit 24L and is implemented by a differential comparator, in order to compare downside detection signal VL and predetermined downside critical voltage VL
ThBased on downside detection signal VL and predetermined downside critical voltage VL
ThBetween comparative result, downside is adjusted circuit 24L and is dynamically adjusted downside drive current IL
aSize.Particularly, the base stage of downside detection signal VL oxide-semiconductor control transistors L5, and downside critical voltage VL
ThThe base stage of oxide-semiconductor control transistors L6.The emitter coupled in common of transistor L5 and L6 is in current source I6.Transistor L7 and L8 form the diode-coupled kenel respectively as load, and are connected to the collector electrode of transistor L5 and L6.When downside detection signal VL more hour, be dispensed among the current source I6 the more by the electric current of the formed current path of transistor L5.When downside detection signal VL is lower than downside critical voltage VL
ThThe time, the electric current that current source I6 is supplied is then flowed through fully by the formed current path of transistor L5.Because transistor L9 and transistor L7 constitute a current mirror, and the collector coupled of transistor L9 is in the current source I4 of downside supply circuit 21L, so the current flowing of transistor L9 (CurrentSink) causes downside drive current IL
aReduce mat and reaching according to driving voltage V
ODynamically adjust downside drive current IL
aEffect.
In one embodiment, current source I6 is designed to more than or equal to current source I4, makes that working as downside detection signal VL is lower than downside critical voltage VL
ThThe time, the electric current that current source I4 is supplied is taken away by transistor L9 fully, thereby can't continue to supply downside drive current IL
aTherefore, downside is adjusted circuit 24L and is saved downside drive current IL effectively
aSupply, reach high efficiency driving operation.In another embodiment, downside critical voltage VL
ThBe configured to make the voltage V between the collector emitter of transistor L3
CE (L3)Enough avoid transistor L3 to enter dark saturation region greatly, use and improve driving voltage V
OReaction speed when conversion.At downside drive current IL
aAfter the stop supplies, resistance R 5 provides a discharge path to give transistor L3, guarantees that downside amplifying circuit 22L is maintained at the not closed condition of consumed power.
Though the present invention was illustrated as illustration by preferred embodiment already, the person of should be appreciated that is: the invention is not restricted to the embodiment that this is disclosed.On the contrary, this invention is intended to contain is tangible various modification and similar configuration to those skilled in the art.Therefore, the scope of claims should be according to the widest annotation, and this type of is revised and similar configuration to contain all.
Claims (10)
1, a kind of drive circuit applies a driving voltage to via an output and switches element, comprises:
One supply circuit is in order to produce one first drive current in response to a control signal;
One amplifying circuit in order to amplifying this first drive current producing one second drive current, and applies this second drive current to this output and makes this driving voltage change;
One testing circuit is coupled in this output, and in order to produce a detection signal, it represents this driving voltage; And
One adjusts circuit, is implemented by a differential comparator, in order to dynamically to adjust the size of this first drive current based on the comparative result of this detection signal and a critical voltage of being scheduled to.
2, drive circuit as claimed in claim 1, wherein:
This differential comparator comprises:
One first control end is in order to receive this detection signal;
One second control end is in order to receive this critical voltage;
One first current path is controlled by this first control end;
One second current path is controlled by this second control end; And
One current source, in order to distribute an adjustment electric current of being scheduled to according to this comparative result between this detection signal and this critical voltage to this first current path and this second current path, wherein:
This first current path is coupled in this supply circuit so that dynamically adjust this first drive current.
3, drive circuit as claimed in claim 2, wherein:
This adjustment electric current is configured to more than or equal to this first drive current.
4, drive circuit as claimed in claim 1, wherein:
When this detection signal increases and when this critical voltage, this adjustment circuit diminishes this first drive current gradually.
5, drive circuit as claimed in claim 4, wherein:
When this detection signal surpassed this critical voltage, this adjustment circuit prevented that fully this first drive current is applied to this amplifying circuit.
6, drive circuit as claimed in claim 1, wherein:
When this detection signal reduces and when this critical voltage, this adjustment circuit diminishes this first drive current gradually.
7, drive circuit as claimed in claim 6, wherein:
When this detection signal was lower than this critical voltage, this adjustment circuit prevented that fully this first drive current is applied to this amplifying circuit.
8, drive circuit as claimed in claim 1, wherein:
This amplifying circuit applies this second drive current to this output makes this driving voltage rise, and
This amplifying circuit comprises:
One the first transistor, have a base stage, an emitter, with a collector electrode, this base stage is in order to receiving this first drive current, this emitter-coupled is in an earth level, and
One transistor seconds, have a base stage, an emitter, with a collector electrode, this base stage is coupled in this collector electrode of this first transistor, this emitter-coupled is in a supply-voltage source, this collector electrode is in order to apply this second drive current to this output.
9, drive circuit as claimed in claim 1, wherein:
This amplifying circuit applies this second drive current to this output makes this driving voltage descend, and
This amplifying circuit comprises:
One the first transistor, have a base stage, an emitter, with a collector electrode, this base stage is in order to receiving this first drive current, this collector coupled is in a supply-voltage source, and
One transistor seconds, have a base stage, an emitter, with a collector electrode, this base stage is coupled in this emitter of this first transistor, this emitter-coupled is in an earth level, this collector electrode is in order to apply this second drive current to this output.
10, drive circuit as claimed in claim 1, wherein:
This testing circuit is implemented by a level shifting circuit, makes this detection signal form by making this driving voltage translation one predetermined potential difference.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510065020 CN1848684A (en) | 2005-04-12 | 2005-04-12 | Drive circuit for switching component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510065020 CN1848684A (en) | 2005-04-12 | 2005-04-12 | Drive circuit for switching component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1848684A true CN1848684A (en) | 2006-10-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510065020 Pending CN1848684A (en) | 2005-04-12 | 2005-04-12 | Drive circuit for switching component |
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| CN (1) | CN1848684A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545555A (en) * | 2010-11-22 | 2012-07-04 | 株式会社电装 | Load driver with constant current variable structure |
-
2005
- 2005-04-12 CN CN 200510065020 patent/CN1848684A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545555A (en) * | 2010-11-22 | 2012-07-04 | 株式会社电装 | Load driver with constant current variable structure |
| CN102545555B (en) * | 2010-11-22 | 2015-01-07 | 株式会社电装 | Load driver with constant current variable structure |
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Effective date of registration: 20090109 Address after: Hsinchu City, Taiwan, China Applicant after: Global Mixed-mode Technology Inc. Address before: Hsinchu city of Taiwan Province Applicant before: Yuanchuang Science and Technology Co., Ltd. |
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Owner name: ZHIXIN TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: YUANCHUANG TECHNOLOGY CO., LTD. Effective date: 20090109 |
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