CN1841149A - Passivation protection method for silicon-based liquid crystal aluminum reflecting electrode - Google Patents
Passivation protection method for silicon-based liquid crystal aluminum reflecting electrode Download PDFInfo
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- CN1841149A CN1841149A CN 200510062485 CN200510062485A CN1841149A CN 1841149 A CN1841149 A CN 1841149A CN 200510062485 CN200510062485 CN 200510062485 CN 200510062485 A CN200510062485 A CN 200510062485A CN 1841149 A CN1841149 A CN 1841149A
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- silicon
- liquid crystal
- reflection electrode
- protection method
- based liquid
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000002161 passivation Methods 0.000 title claims abstract description 26
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 3
- 239000004411 aluminium Substances 0.000 claims description 42
- 239000003292 glue Substances 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Formation Of Insulating Films (AREA)
- Light Receiving Elements (AREA)
Abstract
A passivation protection method for a silicon-based Liquid Crystal On Silicon (LCOS) aluminum reflective electrode belongs to the technical field of microelectronic device preparation, and comprises the following process steps: 1. photoetching a reflection electrode pattern on the surface of the silicon substrate; 2. evaporating an aluminum film on the surface of the silicon wafer with the pattern photoetched by using an electron beam; 3. obtaining a required aluminum reflecting electrode pattern by adopting a conventional stripping process; 4. and growing silicon dioxide on the aluminum reflecting electrode to serve as a passivation layer to finish the manufacture. The method has the advantages of low cost and simple process.
Description
Technical field
The invention belongs to the microelectronic component preparing technical field, the passivation protection method of particularly a kind of liquid crystal on silicon (LCOS) aluminium reflection electrode.
Background technology
Liquid crystal on silicon (LCOS) is on the basis of traditional liquid crystal display device, is the high-tech product of one in conjunction with silicon semiconductor technology and optical image technology.Reflecting electrode is as the important component part of liquid crystal on silicon (LCOS), its reflectivity has direct influence to the whole display performance of liquid crystal on silicon (LCOS), the reflecting electrode of liquid crystal on silicon (LCOS) all is to adopt aluminium at present, generate aluminium oxide but the aluminium reflecting surface is oxidized easily, thereby reflectivity is descended, finally cause the overall performance of device to descend.
Summary of the invention
The purpose of this invention is to provide easily oxidized and the method that reflectivity is descended of a kind of solution liquid crystal on silicon (LCOS) aluminium reflection electrode.
For achieving the above object, technical solution of the present invention is at first to process aluminium reflection electrode on silicon chip, and then on reflecting electrode vapour deposition silicon dioxide as the passivation protection layer.
The passivation protection method of described a kind of liquid crystal on silicon (LCOS) aluminium reflection electrode, its step is as follows:
Step 1, on the silicon chip surface, make the reflecting electrode figure by lithography;
Step 2, go out the aluminium film with the cryotronics beam evaporation at the silicon chip surface that makes figure by lithography;
Step 3, the conventional stripping technology of employing obtain required aluminium reflection electrode figure;
Step 4, on aluminium reflection electrode the growthing silica passivation layer.
The passivation protection method of described a kind of liquid crystal on silicon (LCOS) aluminium reflection electrode, its described step 1 on the silicon chip surface, make the reflecting electrode figure by lithography, be coated with 9912 glue before the photoetching earlier, thick 1000-1500nm.
The passivation protection method of described a kind of liquid crystal on silicon (LCOS) aluminium reflection electrode, the aluminium film of the deposit on the silicon chip surface of its described step 2, thickness is 45～55nm, with the method acquisition of cryotronics beam evaporation.
The passivation protection method of described a kind of liquid crystal on silicon (LCOS) aluminium reflection electrode, the stripping technology of its described step 3 is in acetone and adopt ultrasound wave to finish.
The passivation protection method of described a kind of liquid crystal on silicon (LCOS) aluminium reflection electrode, its described step 4 growthing silica passivation layer on aluminium reflection electrode, thickness is 200-350nm, obtains with plasma reinforced chemical vapour deposition (PECVD) method.
The passivation protection method of described a kind of silicon-based liquid crystal aluminium reflection electrode after its described gluing, toasted 2.5～3.5 minutes on 85～90 ℃ of hot plates again.
The inventive method has the low and advantage of simple technology of cost.
Description of drawings
Fig. 1-1 is to Fig. 1-the 5th, the process flow diagram of the passivation protection method of liquid crystal on silicon of the present invention (LCOS) aluminium reflection electrode;
Fig. 2-1 is to Fig. 2-the 5th, the process flow diagram of the embodiment of the invention.
Embodiment
The concrete implementation step of the passivation protection method of liquid crystal on silicon of the present invention (LCOS) aluminium reflection electrode is as follows:
1, as Figure 1-1, be coated with optics photoresist 102 on silicon chip 101 surfaces, optics etching glue is S9912, the thick 1000-1500nm of glue.
2, shown in Fig. 1-2, optical lithography method exposure top optics etching glue 102, the development top optics etching glue obtains figure 103.
3, as Figure 1-3, deposit aluminium film 104 on optics etching glue 102 surfaces, aluminium film 104 thickness are 45～55nm, are to adopt the method for cryotronics beam evaporation to obtain.
4, shown in Fig. 1-4, add ultrasonic method with acetone and peel off the aluminium film of removing on photoresist and the photoresist, obtain the aluminium film pattern 105 on silicon chip at last.
5, shown in Fig. 1-5, adopt plasma reinforced chemical vapour deposition (PECVD) method silicon dioxide thin film growth 106 on aluminium reflection electrode, thickness is 200-350nm, finishes the making of aluminium reflection electrode passivation protection layer.
Embodiment
1, shown in Fig. 2-1, on silicon chip 201 surfaces, be coated with optics photoresist 202, optics etching glue is S9912, the thick 1000-1500nm of glue; Toasted 3 minutes on 85 ℃ of hot plates again after the gluing.
2, shown in Fig. 2-2, optical lithography method exposure top optics etching glue 202, the development top optics etching glue obtains figure 203.
3, shown in Fig. 2-3, deposit aluminium film 204 on optics etching glue 202 surfaces, aluminium film 102 thickness are 50nm, are to adopt the method for cryotronics beam evaporation to obtain.
4, shown in Fig. 2-4, add ultrasonic method with acetone and peel off the aluminium film of removing on photoresist and the photoresist, obtain the aluminium film pattern 205 on silicon chip at last.
5, shown in Fig. 2-5, adopt plasma reinforced chemical vapour deposition (PECVD) method silicon dioxide thin film growth 206 on aluminium reflection electrode, thickness is 200-350nm, finishes the making of aluminium reflection electrode passivation protection layer.
Claims (6)
1, a kind of passivation protection method of silicon-based liquid crystal aluminium reflection electrode is characterized in that, its key step is as follows:
Step 1, on the silicon chip surface, make the reflecting electrode figure by lithography;
Step 2, go out the aluminium film in the silicon chip surface deposited by electron beam evaporation that makes figure by lithography;
Step 3, the conventional stripping technology of employing obtain required aluminium reflection electrode figure;
Step 4, on aluminium reflection electrode the growthing silica passivation layer.
2, the passivation protection method of a kind of silicon-based liquid crystal aluminium reflection electrode according to claim 1 is characterized in that, described step 1 on the silicon chip surface, make the reflecting electrode figure by lithography, be coated with S9912 glue before the photoetching earlier, thick 1000～1500nm.
3, the passivation protection method of a kind of silicon-based liquid crystal aluminium reflection electrode according to claim 1 is characterized in that, the aluminium film of the deposit on the silicon chip surface of described step 2, and thickness is 45～55nm, with the method acquisition of cryotronics beam evaporation.
4, the passivation protection method of a kind of silicon-based liquid crystal aluminium reflection electrode according to claim 1 is characterized in that, the stripping technology of described step 3 is in acetone and adopt ultrasound wave to finish.
5, the passivation protection method of a kind of silicon-based liquid crystal aluminium reflection electrode according to claim 1; it is characterized in that; described step 4 is the growthing silica passivation layer on aluminium reflection electrode, obtains with the plasma reinforced chemical vapour deposition method, and thickness is 200～350nm.
6, the passivation protection method of a kind of silicon-based liquid crystal aluminium reflection electrode according to claim 2 is characterized in that, after the described gluing, toasts 2.5～3.5 minutes on 85～90 ℃ of hot plates again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100624858A CN100349047C (en) | 2005-03-29 | 2005-03-29 | Passivation protection method for silicon-based liquid crystal aluminum reflecting electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100624858A CN100349047C (en) | 2005-03-29 | 2005-03-29 | Passivation protection method for silicon-based liquid crystal aluminum reflecting electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1841149A true CN1841149A (en) | 2006-10-04 |
| CN100349047C CN100349047C (en) | 2007-11-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100624858A Expired - Fee Related CN100349047C (en) | 2005-03-29 | 2005-03-29 | Passivation protection method for silicon-based liquid crystal aluminum reflecting electrode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311802B (en) * | 2007-05-23 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | Silicon based LCD device, silicon based LCD device reflector and manufacture method |
| CN109633964A (en) * | 2019-02-19 | 2019-04-16 | 惠科股份有限公司 | Manufacturing method of conductive layer and display panel |
| CN110658649A (en) * | 2019-08-29 | 2020-01-07 | 深圳市科创数字显示技术有限公司 | Manufacturing method of silicon-based liquid crystal device, silicon-based liquid crystal device and wavelength selection switch |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2261079B (en) * | 1991-10-31 | 1995-06-14 | Asahi Optical Co Ltd | Surface reflecting mirror |
| CN1244837C (en) * | 1996-10-22 | 2006-03-08 | 精工爱普生株式会社 | Base plate for liquid crystal panel and liquid crystal panel |
| US6937398B2 (en) * | 2001-04-26 | 2005-08-30 | Intel Corporation | Highly reflective optical components |
| JP2003029010A (en) * | 2001-07-16 | 2003-01-29 | Nippon Sheet Glass Co Ltd | Substrate with semitransmissive mirror and semitransmissive liquid crystal display device |
| CN1321054C (en) * | 2004-07-06 | 2007-06-13 | 华东师范大学 | Preparation method of silicon-based micro mechanical photomodulator chip |
-
2005
- 2005-03-29 CN CNB2005100624858A patent/CN100349047C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311802B (en) * | 2007-05-23 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | Silicon based LCD device, silicon based LCD device reflector and manufacture method |
| CN109633964A (en) * | 2019-02-19 | 2019-04-16 | 惠科股份有限公司 | Manufacturing method of conductive layer and display panel |
| CN110658649A (en) * | 2019-08-29 | 2020-01-07 | 深圳市科创数字显示技术有限公司 | Manufacturing method of silicon-based liquid crystal device, silicon-based liquid crystal device and wavelength selection switch |
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| Publication number | Publication date |
|---|---|
| CN100349047C (en) | 2007-11-14 |
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