CN1835279A - Tunable plasma resonant chamber - Google Patents

Tunable plasma resonant chamber Download PDF

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Publication number
CN1835279A
CN1835279A CN 200610018568 CN200610018568A CN1835279A CN 1835279 A CN1835279 A CN 1835279A CN 200610018568 CN200610018568 CN 200610018568 CN 200610018568 A CN200610018568 A CN 200610018568A CN 1835279 A CN1835279 A CN 1835279A
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China
Prior art keywords
resonant cavity
cavity
tuning screw
screw pin
column type
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CN 200610018568
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Chinese (zh)
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CN100541907C (en
Inventor
李震宇
孙建华
方东权
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Yangtze Optical Fibre and Cable Co Ltd
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Yangtze Optical Fibre and Cable Co Ltd
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Priority to CNB2006100185681A priority Critical patent/CN100541907C/en
Publication of CN1835279A publication Critical patent/CN1835279A/en
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Publication of CN100541907C publication Critical patent/CN100541907C/en
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Abstract

Being in use for machine tool of fabricating preformrod of PCVD optical fiber, the tunable resonant cavity of plasma includes columned body case of resonant cavity. Cut off waveguide is setup at two ends of the columned body case of resonant cavity. Characters are that tuning screw pin is setup at one end of the columned body case of resonant cavity. Adjusting insertion depth of the tuning screw pin at any moment can reach tuning effect to make waveguide device match to load of resonant cavity well in order to adapt to everchanging equivalent load of resonant cavity in course of working so as to realize real time control of energy coupling. The invention helps to increase working accuracy and efficiency of PCVD technique, and prevent damage on system device from microwave so as to raise useful service life of system. Features are: simple structure, stable performance, convenient for fabrication.

Description

Tunable plasma resonant cavity
Technical field
The present invention relates to a kind of tunable plasma resonant cavity of the PCVD of being used for preform machining tool, is the improvement to existing plasma resonant.
Background technology
PCVD is that Plasma Enhanced Chemical Vapor Deposition (PECVD) is one of main technique of preform processing, the processing mechanism of PCVD technology is by the direct effect of high-frequency microwave to reactant gas, make its rapid generation physical-chemical reaction and form pure silicon dioxide or doped silica, directly deposit with glassy state at the quartz ampoule inwall.PCVD technology has the characteristics of flexible precision, and the plasma resonant microwave system is the core of PCVD process equipment.The plasma resonant microwave system includes plasma resonant, microwave generator and waveguide assembly three parts and forms, waveguide assembly is coupled to plasma resonant with the microwave transmission that microwave generator produces, and finishes PCVD processes process by plasma resonant to preform processing district emission high-frequency microwave energy.Coupling at this process ionic medium body resonant cavity and microwave is very important, otherwise not matching between the two not only can influence coupling effect, causes the loss of energy, but also fragile system device, and influences the machining accuracy of PCVD technology.
The existing plasma resonant that is used for the preform manufacturing is divided into and is two kinds of different structure types of coaxial type and column type.Wherein the coaxial type resonant cavity adopts at present is 1/4 wave length type, and this cavity structure is fairly simple, cavity body structure size allowed band broad, design, make fairly simple; Starting of oscillation easily in use; The structure of its pair coaxial inner conductor, but first-harmonic and all starting of oscillations of 3 subharmonic can be guaranteed, make full use of microwave energy.Its deficiency be: the higher mode microwave of coaxial cavity can disturb normal resonance, and the microwave energy of its higher mode can be converted into surface current, causes cavity heating, and the unnecessary heat of its generation can damage the resonant cavity cavity when serious.And cavity is not easy to strengthen necessary satisfied (a+b)≤λ in the design Min/ π (a-coaxial inner conductor radius; B-resonant cavity inside radius; λ MinMinimal wave length in the-working band), so just limits the size of prefabricated rods, be not easy to realize the manufacturing of major diameter prefabricated rods.Another kind is the column type resonant cavity, and this cavity structure is simple, processing and manufacturing easily.Adaptable cavity body structure is TE 011Mould, TE 111Mould and TM 010Model.Existing column type resonant cavity is all untunable, after cavity size is fixing, resonance frequency and electromagnetic mode of operation is had relatively high expectations.Therefore allow excursion narrower to the cavity body structure size, actual adding, require very highly man-hour, otherwise electromagnetic wave can't starting of oscillation in cavity.In addition, in the prior art, coaxial waveguide normally is set in waveguide assembly, adjust the matching performance of waveguide assembly by the adjusting of coaxial inner conductor in the coaxial waveguide (antenna) being inserted the rectangular waveguide degree of depth, yet, it is very limited to adopt said structure to adjust function, is difficult to tackle the variation of equivalent load in the course of processing of plasma resonant, more can't realize the real-time control of plasma resonant microwave system energy coupling.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of tunable plasma resonant cavity at the deficiency of above-mentioned prior art existence, it is not only simple in structure, requirement on machining accuracy is lower, and can regulate the matching performance of plasma resonant vibration chamber and microwave and load effectively, realize the real-time control of plasma resonant microwave system energy coupling, further improve the machining accuracy and the efficient of PCVD technology.
The present invention for the technical scheme that problem adopted of the above-mentioned proposition of solution is: include column type resonant cavity housing 3, two ends at column type resonant cavity housing are provided with cut-off waveguide 4, its difference is to install tuning screw pin 2 at an end of column type resonant cavity housing, the front end of tuning screw pin stretches into column type resonant cavity cavity, and stretches into depth-adjustment.
Press such scheme, described column type resonant cavity is TM 010The model cavity; Described tuning screw pin is provided with 2~3, circumferentially divides equally laying along column type resonant cavity cavity termination; The pin-and-hole slippage configuration of offering on tuning screw pin and the column type resonant cavity housing termination, the rear end of tuning screw pin is connected with securing member, and perhaps the rear end of tuning screw pin links to each other with a retractable driving device, constitutes automatically flexible tuning screw pin; Described retractable driving device can be screw rod retractable driving device or tooth bar retractable driving device.
When the present invention uses, the high-frequency microwave that microwave generator produces transfers to rectangular waveguide, make high-frequency microwave be coupled to the plasma resonant vibration chamber through adapter and cylindrical waveguide (or coaxial waveguide), the mist that the high-frequency microwave energy is transmitted in the work piece glass bushing pipe is finished the PCVD course of processing by the plasma resonant vibration chamber.When the load in the energy of waveguide assembly transmission and plasma resonant vibration chamber is not complementary, the degree of depth that stretches into the resonant cavity cavity by the adjusting tuning screw pin changes the adjustment that the equivalent capacity that forms between pin end face and cavity end face reaches resonance frequency, (when tuning screw pin inserts more for a long time, tuning screw pin end face and cavity end face ask that the equivalent capacity of formation just strengthens, and resonance frequency also just reduces; Otherwise resonance frequency just raises.) make plasma resonant vibration chamber load impedance and source impedance coupling, to reach the minimum reflected energy, make the plasma resonant vibration chamber be coupled to the purpose of ceiling capacity.Even the waveguide assembly system well with the resonant cavity load matched, thereby realize the real-time control of energy coupling.
Beneficial effect of the present invention is: 1, by at resonant cavity tuning screw pin being set, can be according to actual conditions, at any time the insertion depth of regulating pin reaches tuning effect, can make waveguide assembly well with the resonant cavity load matched, adapting to the continuous variation of resonant cavity equivalent load in the course of processing, thereby realize the real-time control of energy coupling; 2, help to improve the machining accuracy and the efficient of PCVD technology, avoid the damage of microwave simultaneously, improve the Acceptable life of plasma resonant microwave system system device; 3, simple in structure, can allow resonant cavity to have the mismachining tolerance of certain limit, therefore be convenient to processing and fabricating; 4, the field structure of this resonant cavity die cavity simply, stable (electric field has only the axial component of z, and magnetic field has only the component of φ direction; The field amount is along z and the equal no change of φ direction; And has symmetry for the z axle); When the length l<2.1R of cavity (cavity radius), TM 010Be the lowest order mode in the cavity, can avoid interference the influence of mould.
TM 010The expression of each field component of mould is:
E Z=E mJ 0(K cR) radius of r-field action
H φ = E m 1 η J 1 ( K c r ) K c-2.405/R; R-cavity inside radius
Q 0 = λ r [ v mn 2 + ( pπR l ) 2 ] 1 / 2 2 πδ ( 1 + sR l ) Length in the l-cavity
Description of drawings
Fig. 1 is the positive sectional structure chart of one embodiment of the invention.
Embodiment
Further specify embodiments of the invention below in conjunction with accompanying drawing, include TM 010The column type resonant cavity housing 3 of model cavity, for the electromagnetic wave of 2.45GHz, this resonant cavity cavity internal diameter is Φ 90mm~Φ 120mm, length range 50mm~90mm (resonance frequency λ r=2.61R, irrelevant with cavity length).Circumferentially offering a through hole 6 at column type resonant cavity housing joins with waveguide assembly, two ends at column type resonant cavity housing are provided with cut-off waveguide 4, the other end of column type resonant cavity housing is offered 3 pin-and-holes, pin-and-hole is circumferentially divided equally laying along the termination, tuning screw pin 2 is installed in configuration in the pin-and-hole, tuning screw pin is the circular shaft shape, diameter is Φ 5mm~Φ 10mm, front end has socket cap, tuning screw pin can be in pin-and-hole before and after slippage, the front end of tuning screw pin stretches into column type resonant cavity cavity, and the degree of depth that stretches into the resonant cavity cavity is 0~25mm; The rear end of tuning screw pin is provided with screw thread and regulates screw and locking nut 5 configurations, is used for tuning and fastening.Perhaps the outer end of tuning screw pin links to each other with a screw rod retractable driving device, constitutes automatically flexible tuning screw pin.The two ends of resonant cavity all offer through hole, are used to install preform 1.

Claims (8)

1, a kind of tunable plasma resonant cavity, include column type resonant cavity housing, two ends at column type resonant cavity housing are provided with cut-off waveguide, it is characterized in that installing tuning screw pin at an end of column type resonant cavity housing, the front end of tuning screw pin stretches into column type resonant cavity cavity, and stretches into depth-adjustment.
2, by the described tunable plasma resonant cavity of claim 1, it is characterized in that described column type resonant cavity is TM 010The model cavity.
3, by claim 1 or 2 described tunable plasma resonant cavities, it is characterized in that described tuning screw pin is provided with 2~3, circumferentially divide equally laying along column type resonant cavity cavity termination.
4, by claim 1 or 2 described tunable plasma resonant cavities, the diameter that it is characterized in that tuning screw pin is Φ 5~Φ 10mm, and the degree of depth that stretches into column type resonant cavity cavity is 0~25mm.
5, by claim 1 or 2 described tunable plasma resonant cavities, it is characterized in that the pin-and-hole slippage of offering on described tuning screw pin and the column type resonant cavity housing termination disposes, the rear end of tuning screw pin is connected with securing member.
6, by claim 1 or 2 described tunable plasma resonant cavities, it is characterized in that the rear end of described tuning screw pin links to each other with a retractable driving device, constitute automatically flexible tuning screw pin.
7, by the described tunable plasma resonant cavity of claim 4, it is characterized in that tuning screw pin is the circular shaft shape, front end has socket cap, and the rear end is provided with screw thread and regulates the configuration of screw and locking nut.
8, by claim 1 or 2 described tunable plasma resonant cavities, it is characterized in that described column type resonant cavity cavity internal diameter is Φ 90mm~Φ 120mm, length range 50mm~90mm.
CNB2006100185681A 2006-03-16 2006-03-16 Tunable plasma resonant cavity Expired - Fee Related CN100541907C (en)

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CN100541907C CN100541907C (en) 2009-09-16

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101789535A (en) * 2010-03-10 2010-07-28 北京纳诺帕技术中心 Single-mode cylindrical microwave cavity
CN101853768A (en) * 2010-04-09 2010-10-06 长飞光纤光缆有限公司 Cylindrical plasma resonant cavity
CN102365785A (en) * 2009-03-27 2012-02-29 东京毅力科创株式会社 Tuner and microwave plasma source
CN102820498A (en) * 2012-08-17 2012-12-12 上海无线电设备研究所 High temperature resistant waveguide coaxial structure
CN103353553A (en) * 2013-06-28 2013-10-16 四川大学 Dielectric coefficient microwave measuring device and dielectric coefficient microwave measuring system formed by same
CN103636059A (en) * 2011-06-24 2014-03-12 雷卡邦股份有限公司 Microwave resonant cavity
CN105371790A (en) * 2015-11-30 2016-03-02 西北工业大学 Cavity resonant microwave near-distance measurement sensor with cut-off waveguide radiation port

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102365785A (en) * 2009-03-27 2012-02-29 东京毅力科创株式会社 Tuner and microwave plasma source
CN102365785B (en) * 2009-03-27 2014-02-26 东京毅力科创株式会社 Tuner and microwave plasma source
CN101789535A (en) * 2010-03-10 2010-07-28 北京纳诺帕技术中心 Single-mode cylindrical microwave cavity
EP2557629A4 (en) * 2010-04-09 2015-12-30 Yangtze Optical Fibre And Cable Company Ltd Cylindrical plasma resonant cavity
CN101853768B (en) * 2010-04-09 2012-07-04 长飞光纤光缆有限公司 Cylindrical plasma resonant cavity
WO2011124074A1 (en) * 2010-04-09 2011-10-13 长飞光纤光缆有限公司 Cylindrical plasma resonant cavity
CN101853768A (en) * 2010-04-09 2010-10-06 长飞光纤光缆有限公司 Cylindrical plasma resonant cavity
CN103636059A (en) * 2011-06-24 2014-03-12 雷卡邦股份有限公司 Microwave resonant cavity
CN103636059B (en) * 2011-06-24 2016-01-27 雷卡邦股份有限公司 Microwave cavity
CN102820498A (en) * 2012-08-17 2012-12-12 上海无线电设备研究所 High temperature resistant waveguide coaxial structure
CN103353553A (en) * 2013-06-28 2013-10-16 四川大学 Dielectric coefficient microwave measuring device and dielectric coefficient microwave measuring system formed by same
CN103353553B (en) * 2013-06-28 2016-05-25 四川大学 The dielectric coefficient microwave measurement system of dielectric coefficient MMU microwave measurement unit and formation thereof
CN105371790A (en) * 2015-11-30 2016-03-02 西北工业大学 Cavity resonant microwave near-distance measurement sensor with cut-off waveguide radiation port

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Owner name: YANGTZE OPTICAL FIBRE AND CABLE CO., LTD

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Granted publication date: 20090916