CN1832279A - Near-field optical solid dip ink lens type micro-aperture laser and manufacturing method - Google Patents
Near-field optical solid dip ink lens type micro-aperture laser and manufacturing method Download PDFInfo
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- CN1832279A CN1832279A CN 200510054470 CN200510054470A CN1832279A CN 1832279 A CN1832279 A CN 1832279A CN 200510054470 CN200510054470 CN 200510054470 CN 200510054470 A CN200510054470 A CN 200510054470A CN 1832279 A CN1832279 A CN 1832279A
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Abstract
This invention relates to a micro-aperture laser of a near-field optical solid ink-dipped lens including: a metal membrane capable of forming nm micro-apertures is plated on said laser exit surface and a micro-aperture of sub-wavelength stage is set on the metal membrane characterizing in filling in high refractive rate substances in the aperture.
Description
Technical field
The invention belongs to technical field of semiconductors, relate near field optic, nanocomposite optical, surface plasma sub-wavelength optics and field of nanometer technology, particularly near-field optical solid dip ink lens type micro-aperture laser and manufacture method.
Background technology
The small light source of nanoscale is one of Primary Component of applications such as microcell imaging, microcell detection, near field of light storage and near field photoetching, for nanocomposite optical, sub-wavelength optical technical field great application prospect is arranged.The logical optical efficiency of the metal film optical fiber probe that has nano aperture that is widely used at present is very low, is difficult to satisfy the actual requirement in fields such as detection, optical storage and photoetching, has limited the application of this type of device greatly.
In order to break through the too weak shortcoming of nanometers light light intensity, people have proposed the mentality of designing of micro-aperture laser.Promptly plate light tight thin metal layer in emission of semiconductor limit and surface-emitting laser light output surface, open the bright dipping of nanoscale aperture then on this thin layer, the clad optical fiber probe under the bright dipping power ratio same apertures of the produced little hole laser of this method exceeds about 10
4Doubly.Up-to-date progress can produce the aperture about 300nm on the semiconductor edge-emitting laser of 650nm wave band, bright dipping far field power reaches the micro-aperture laser about 0.4 milliwatt.But make this device can satisfy the requirement of near field of light storage, also need further increase and luminous power, target is the power output that will reach 1 milliwatt at least.So the various achievements in research of logical optical efficiency occurred increasing around the aperture shape design, though can extrapolate the special-shaped aperture of the logical optical efficiency of a lot of increases in theory, but aperture shape is complicated more, and manufacture difficulty is also just big more, and this has obviously departed from the trend of device practicability.
Summary of the invention
The object of the present invention is to provide a kind of near-field optical solid dip ink lens type micro-aperture laser and manufacture method, have simple, and the scheme of effective increase micro-aperture laser power output is to overcome the too for a short time shortcoming that is difficult to practicability of this device power at present.And this scheme can with the design logotype of the aperture shape of various enhancing transmissions, further strengthen the logical optical efficiency in aperture.
The present invention proposes a kind of near-field optical solid dip ink lens type micro-aperture laser, comprise: be coated with the metallic diaphragm that can form the nanometer micro-aperture on this laser emitting surface, the micro-aperture that has a sub-wavelength magnitude on this metallic diaphragm, it is characterized in that, wherein, in micro-aperture, be filled with the material of high index of refraction.
Wherein said micro-aperture is less than 1/2 of lambda1-wavelength.
That the shape of wherein said micro-aperture comprises is square, periodically square opening battle array, rectangle, periodically rectangular opening battle array, circle, periodically circular port battle array, ellipse, periodically slotted eye battle array, triangle, periodically tri-angle-holed battle array, C shape, periodically C shape hole battle array, semicircle, periodically semi-circular hole battle array, annular, and this circular port is by the periodicity circular groove centers on, the rectangular opening both sides are surrounded by the periodicity rectangular recess grating shape.
Wherein said metallic diaphragm comprises a kind of in gold, silver, copper, aluminium, titanium alloy, the titanium platinum alloy.
Wherein fill the material of micro-aperture, comprise solid, fixedness oil, perhaps low volatility liquid, wherein the refractive index of this material is 1.2-4, extinction coefficient is 0-0.5.
Wherein said laser is semiconductor edge-emitting laser or vertical cavity surface emitting laser, and wave-length coverage can be from ultraviolet 400nm to infrared 1550nm.
The manufacture method of a kind of near-field optical solid dip ink lens type micro-aperture laser of the present invention is characterized in that, comprises the steps:
Step 1: get the semiconductor laser;
Step 2: the metallic diaphragm that can form the nanometer micro-aperture at exit surface evaporation one deck of this semiconductor laser;
Step 3: adopt the focused-ion-beam lithography method, perhaps the electron beam exposure method forms the micro-aperture of a sub-wavelength magnitude on metallic diaphragm;
Step 4: the material of in this micro-aperture, filling high index of refraction.
Adopt electron cyclotron resonace equipment to finish when wherein the material of the high index of refraction of Tian Chonging is for solid material; Fixed oil is upright to be connect device is dipped in the oil and fills; Low volatility liquid adopts nanometers light, and this directly locates the radiation attraction that the high-index material particulate produces is carried out the filling of self assembly formula in light hole.
Wherein said micro-aperture is less than 1/2 of lambda1-wavelength.
That the shape of wherein said micro-aperture comprises is square, periodically square opening battle array, rectangle, periodically rectangular opening battle array, circle, periodically circular port battle array, ellipse, periodically slotted eye battle array, triangle, periodically tri-angle-holed battle array, C shape, periodically C shape hole battle array, semicircle, periodically semi-circular hole battle array, annular, and this circular port is by the periodicity circular groove centers on, the rectangular opening both sides are surrounded by the periodicity rectangular recess grating shape.
Wherein said metallic diaphragm comprises a kind of in gold, silver, copper, aluminium, titanium alloy, the titanium platinum alloy.
Wherein fill the material of micro-aperture, comprise solid, fixedness oil, perhaps low volatility liquid, wherein the refractive index of this material is 1.2-4, extinction coefficient is 0-0.5.
Wherein said laser is semiconductor edge-emitting laser or vertical cavity surface emitting laser, and wave-length coverage can be from ultraviolet 400nm to infrared 1550nm.
Characteristics of the present invention:
Output far field luminous power significantly strengthens the little hole laser of solid dip ink type of the present invention is filled the high index of refraction material in the aperture after, the little hole laser that experimental results show that a 250nm * 500nm is after filling high index of refraction low volatility liquid silicone oil, go out luminous power and increase about 25%, Theoretical Calculation proves that this enhancing does not only enlarge the near field spot size, can also make spot size reduce to a certain extent.
This solid dip ink type micro-aperture laser of the present invention can be used as the near field active probe and is applied to microcell imaging, microcell detection, near field of light storage and near field photoetching and fields such as biology, chemical molecular microoperation.
Description of drawings:
Be detail knowledge content of the present invention, reach in conjunction with the embodiments description of drawings as after, wherein:
Fig. 1 is the electron scanning micrograph of common micro-aperture laser.
Fig. 2 a is a light wave by the theoretical calculation model schematic diagram of the situation of not filling SiO2 in the aperture on the metal film.
Fig. 2 b is that light wave is by filling the theoretical calculation model schematic diagram of the situation of SiO2 in the aperture on the metal film.
Fig. 3 a1 and 3b1 are light wave optical field distribution on X and the Y both direction when passing through filled media aperture not.
Fig. 3 a2 and 3b2 are light wave optical field distribution on X and the Y both direction when passing through the filled media aperture.
Fig. 4 is the light wave transmitance of the various pore sizes of Theoretical Calculation.
Fig. 5 a is the situation of filling silicon oil in the micro-aperture laser aperture.
Fig. 5 a1 is the experimental result of the micro-aperture laser front facet far field power output of filling silicon oil in the aperture.
Fig. 5 b is the situation of filling silicon oil not in the micro-aperture laser aperture.
Fig. 5 b1 is the experimental result of the micro-aperture laser front facet far field power output of filling silicon oil not in the aperture.
Embodiment
See also Fig. 1 and Fig. 2, a kind of near-field optical solid dip ink lens type micro-aperture laser of the present invention, comprise: be coated with the metallic diaphragm 4 that can form the nanometer micro-aperture on this laser emitting surface, the micro-aperture 6 that has a sub-wavelength magnitude on this metallic diaphragm 4, it is characterized in that, wherein, in micro-aperture 6, be filled with the material of high index of refraction, this fills the material of micro-aperture 6, comprise solid, fixedness oil, perhaps low volatility liquid, wherein the refractive index of this material is 1.2-4, extinction coefficient is 0-0.5.
Wherein said micro-aperture 6 is less than 1/2 of lambda1-wavelength, that the shape of this micro-aperture 6 comprises is square, periodically square opening battle array, rectangle, periodically rectangular opening battle array, circle, periodically circular port battle array, ellipse, periodically slotted eye battle array, triangle, periodically tri-angle-holed battle array, C shape, periodically C shape hole battle array, semicircle, periodically semi-circular hole battle array, annular, and this circular port is by the periodicity circular groove centers on, the rectangular opening both sides are surrounded by the periodicity rectangular recess grating shape;
Wherein said metallic diaphragm 4 comprises a kind of in gold, silver, copper, aluminium, titanium alloy, the titanium platinum alloy.
Wherein said laser 7 is semiconductor edge-emitting laser or vertical cavity surface emitting laser, and wave-length coverage can be from ultraviolet 400nm to infrared 1550nm.
In conjunction with consulting Fig. 1 and Fig. 2, the manufacture method of a kind of near-field optical solid dip ink lens type micro-aperture laser of the present invention is characterized in that, comprises the steps: again
Step 1: get semiconductor laser 7;
Step 2: can form the metallic diaphragm 4 of nanometer micro-aperture at exit surface evaporation one deck of this semiconductor laser 7, this metallic diaphragm 4 comprises a kind of in gold, silver, copper, aluminium, titanium alloy, the titanium platinum alloy;
Step 3: adopt the focused-ion-beam lithography method, perhaps the electron beam exposure method forms the micro-aperture 6 of a sub-wavelength magnitude on metallic diaphragm, and this micro-aperture 6 is less than 1/2 of lambda1-wavelength; That the shape of this micro-aperture 6 comprises is square, periodically square opening battle array, rectangle, periodically rectangular opening battle array, circle, periodically circular port battle array, ellipse, periodically slotted eye battle array, triangle, periodically tri-angle-holed battle array, C shape, periodically C shape hole battle array, semicircle, periodically semi-circular hole battle array, annular, and this circular port is by the periodicity circular groove centers on, the rectangular opening both sides are surrounded by the periodicity rectangular recess grating shape;
Step 4: in this micro-aperture 6, fill the material of high index of refraction, wherein fill the material of micro-aperture 6, comprise solid, fixedness oil, perhaps low volatility liquid, wherein the refractive index of this material is 1.2-4, extinction coefficient is 0-0.5; When wherein the material of the high index of refraction of Tian Chonging is solid material, adopt electron cyclotron resonace equipment to finish; Fixed oil is upright to be connect device is dipped in the oil and fills; Low volatility liquid adopts nanometers light, and this directly locates the radiation attraction that the high-index material particulate produces is carried out the filling of self assembly formula in light hole.
Wherein said laser 7 is semiconductor edge-emitting laser or vertical cavity surface emitting laser, and wave-length coverage can be from ultraviolet 400nm to infrared 1550nm.
Example
Solid dip ink type micro-aperture laser of the present invention is described in detail as follows in conjunction with the embodiment that fills low volatility silicone oil in the micro-aperture:
Fig. 1 is the electron scanning micrograph of the emitting cavity face of common micro-aperture laser.Comprise among the figure: micro-aperture 6, its size is 250nm * 500nm; Gold film thin layer 4, thickness is 100nm; The ridge waveguide 8 of semiconductor edge-emitting laser 7.Micro-aperture 6 is to adopt the method manufacturing of focused-ion-beam lithography to form, and position of opening just swashs the position of lase corresponding to the active area of semiconductor laser, and etching depth exceeds to punch metallic diaphragm 4.
For filling high-index materials in the micro-aperture 6 to the influence that light extraction efficiency produced, theoretical calculation model as shown in Figure 2, Fig. 2 a is the model of filled media not in the aperture, Fig. 2 b is the model of filled media in the aperture.The wavelength set of its incident light wave is 650nm, and Gaussian beam 1/e radius is set at 0.8 micron, and the polarization direction is set at the direction along x; Metallic diaphragm 4 upper areas 5 are high index of refraction silicon dioxide; Micro-aperture 6 is set at the square hole of the length of side 300 nanometers; Semiconductor edge-emitting laser 7; The ridge waveguide 8 of semiconductor laser.Utilize Finite Difference-Time Domain to divide algorithm that the optical field distribution by micro-aperture 6 is carried out analog computation, as shown in Figure 3, no matter the polarization of incident light direction is in which direction, the optical field distribution that is filled with the aperture bright dipping of high index of refraction in the micro-aperture 6 will be higher than the aperture (different blackness are represented the relative intensity of light field among the figure) that does not have packing material in the aperture in near-field region intensity.When reaching wavelength magnitude in the aperture, this enhancement effect almost can ignore, this is because compare with communication mode, the effect of tunnelling pattern can be ignored, when micro-aperture 6 greater than incident wavelength 1/2 after, communication mode just comes into existence, the aperture is big more, and the effect of communication mode is just big more, thereby because the effect that the tunnelling pattern is changed into communication mode that solid dip ink lens brought just can be ignored (as shown in Figure 4).
Shown in Figure 5 is to go out the experimental result that luminous power increases behind the preliminary test proof aperture submergence low volatility silicone oil.The bright dipping shaven head of micro-aperture 6 is stained with a bit in the container that fills low volatility silicone oil slightly, is taken out the back and just may make aperture submergence silicone oil.Shown in Fig. 5 b, the aperture goes out luminous power and be 0.38mW (Fig. 5 b1) under the drive current of 25mA not by 9 submergences of silicone oil rete; Shown in Fig. 5 a, the aperture is gone out luminous power and is issued to 0.48mW (Fig. 5 a1) at same 25mA drive current by 9 submergences of silicone oil rete, has increased about 25% than original.This explanation originally can not can propagate out behind aperture submergence high index of refraction silicone oil through the laser that aperture is propagated out, can increase the power output of micro-aperture laser greatly based on the solid dip ink lens principle, this practicality to device has crucial meaning.
Operation principle of the present invention is based in the high refractive index medium optical wavelength less than the wavelength of same frequency light wave in the air dielectric, therefore micro-aperture 6 is if be under the high index of refraction environment, the ratio of aperture and wavelength is greater than aerial ratio, the light percent of pass also just increases thereupon, goes out luminous power and is enhanced.This enhancing appears under the condition of aperture less than wavelength, is that near-field signals or the far field transmitting signal of local around micro-aperture 6 all will obtain certain enhancing.The prospect that micro-aperture laser is applied to nanocomposite optical is that it can break through the diffraction resolution limit of classical optics (about lambda1-wavelength 1/2), and people can control the size of bright dipping hot spot by changing pore size arbitrarily.But according to the principle of sub-wavelength optics, if the aperture of micro hole is less than 1/2 of incident wavelength, and then the aperture does not allow communication mode to exist, and has only the tunnelling pattern to exist, and logical optical efficiency is very low; If the aperture of micro hole is greater than 1/2 of incident wavelength, logical optical efficiency can significantly improve, but this can not break through the diffraction resolution limit of classical optics again, can't embody the advantage of near-field optics.If therefore can keep communication mode make again the aperture less than lambda1-wavelength 1/2 and break through the diffraction resolution limit of classical optics in the air dielectric, then will be to the crucial again meaning of the practicability of device.Be exactly to utilize light wave to reduce in the notion of solid dip ink lens, thereby the minimum dimension that light wave can be reached in high refractive index medium further reduce at high refractive index medium environment medium wavelength.
Claims (13)
1, a kind of near-field optical solid dip ink lens type micro-aperture laser, comprise: be coated with the metallic diaphragm that can form the nanometer micro-aperture on this laser emitting surface, the micro-aperture that has a sub-wavelength magnitude on this metallic diaphragm, it is characterized in that, wherein, in micro-aperture, be filled with the material of high index of refraction.
2, near-field optical solid dip ink lens type micro-aperture laser according to claim 1 is characterized in that, wherein said micro-aperture is less than 1/2 of lambda1-wavelength.
3, near-field optical solid dip ink lens type micro-aperture laser according to claim 1, it is characterized in that: the shape of wherein said micro-aperture comprises square, periodically square opening battle array, rectangle, periodically rectangular opening battle array, circle, periodically circular port battle array, ellipse, periodically slotted eye battle array, triangle, periodically tri-angle-holed battle array, C shape, periodically C shape hole battle array, semicircle, periodically semi-circular hole battle array, annular, and this circular port is by the periodicity circular groove centers on, the rectangular opening both sides are surrounded by the periodicity rectangular recess grating shape.
4, near-field optical solid dip ink lens type micro-aperture laser according to claim 1 is characterized in that, wherein said metallic diaphragm comprises a kind of in gold, silver, copper, aluminium, titanium alloy, the titanium platinum alloy.
5, near-field optical solid dip ink lens type micro-aperture laser according to claim 1 is characterized in that, wherein fills the material of micro-aperture, comprise solid, fixedness oil, perhaps low volatility liquid, wherein the refractive index of this material is 1.2-4, extinction coefficient is 0-0.5.
6, near-field optical solid dip ink lens type micro-aperture laser according to claim 1, it is characterized in that, wherein said laser is semiconductor edge-emitting laser or vertical cavity surface emitting laser, and wave-length coverage can be from ultraviolet 400nm to infrared 1550nm.
7, a kind of manufacture method of near-field optical solid dip ink lens type micro-aperture laser is characterized in that, comprises the steps:
Step 1: get the semiconductor laser;
Step 2: the metallic diaphragm that can form the nanometer micro-aperture at exit surface evaporation one deck of this semiconductor laser;
Step 3: adopt the focused-ion-beam lithography method, perhaps the electron beam exposure method forms the micro-aperture of a sub-wavelength magnitude on metallic diaphragm;
Step 4: the material of in this micro-aperture, filling high index of refraction.
8, the manufacture method of near-field optical solid dip ink lens type micro-aperture laser according to claim 7 is characterized in that, adopts electron cyclotron resonace equipment to finish when wherein the material of the high index of refraction of Tian Chonging is for solid material; Fixed oil is upright to be connect device is dipped in the oil and fills; Low volatility liquid adopts nanometers light, and this directly locates the radiation attraction that the high-index material particulate produces is carried out the filling of self assembly formula in light hole.
9, the manufacture method of near-field optical solid dip ink lens type micro-aperture laser according to claim 7 is characterized in that, wherein said micro-aperture is less than 1/2 of lambda1-wavelength.
10, the manufacture method of near-field optical solid dip ink lens type micro-aperture laser according to claim 8, it is characterized in that, the shape of wherein said micro-aperture comprises square, periodicity square opening battle array, rectangle, periodicity rectangular opening battle array, circular, periodicity circular port battle array, oval, periodicity slotted eye battle array, triangle, periodically tri-angle-holed battle array, C shape, periodicity C shape hole battle array, semicircle, periodicity semi-circular hole battle array, annular, this circular port is centered on by the periodicity circular groove, the grating shape that the rectangular opening both sides are surrounded by the periodicity rectangular recess.
11, the manufacture method of near-field optical solid dip ink lens type micro-aperture laser according to claim 8 is characterized in that, wherein said metallic diaphragm comprises a kind of in gold, silver, copper, aluminium, titanium alloy, the titanium platinum alloy.
12, the manufacture method of near-field optical solid dip ink lens type micro-aperture laser according to claim 8, it is characterized in that, wherein fill the material of micro-aperture, comprise solid, fixedness oil, perhaps low volatility liquid, wherein the refractive index of this material is 1.2-4, and extinction coefficient is 0-0.5.
13, the manufacture method of near-field optical solid dip ink lens type micro-aperture laser according to claim 8, it is characterized in that, wherein said laser is semiconductor edge-emitting laser or vertical cavity surface emitting laser, and wave-length coverage can be from ultraviolet 400nm to infrared 1550nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100589192C (en) * | 2008-04-30 | 2010-02-10 | 苏州纳米技术与纳米仿生研究所 | Integration piezoelectricity movable micro-lens enhancement type conical second-wavelength near-field light probe array |
| CN101881786A (en) * | 2010-05-26 | 2010-11-10 | 中国科学院半导体研究所 | Scanning near-field optical microscopy system based on micro-hole laser |
-
2005
- 2005-03-10 CN CN 200510054470 patent/CN1832279A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100589192C (en) * | 2008-04-30 | 2010-02-10 | 苏州纳米技术与纳米仿生研究所 | Integration piezoelectricity movable micro-lens enhancement type conical second-wavelength near-field light probe array |
| CN101881786A (en) * | 2010-05-26 | 2010-11-10 | 中国科学院半导体研究所 | Scanning near-field optical microscopy system based on micro-hole laser |
| CN101881786B (en) * | 2010-05-26 | 2012-11-14 | 中国科学院半导体研究所 | Scanning near-field optical microscopy system based on micro-hole laser |
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