CN1828962A - Resistive memory device having resistor part for controlling switching window - Google Patents
Resistive memory device having resistor part for controlling switching window Download PDFInfo
- Publication number
- CN1828962A CN1828962A CNA2006100070279A CN200610007027A CN1828962A CN 1828962 A CN1828962 A CN 1828962A CN A2006100070279 A CNA2006100070279 A CN A2006100070279A CN 200610007027 A CN200610007027 A CN 200610007027A CN 1828962 A CN1828962 A CN 1828962A
- Authority
- CN
- China
- Prior art keywords
- memory device
- resistor part
- control transformation
- resistance
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000009466 transformation Effects 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000009825 accumulation Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 5
- 239000002322 conducting polymer Substances 0.000 claims description 4
- 229920001940 conductive polymer Polymers 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 description 21
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 5
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- JRXXLCKWQFKACW-UHFFFAOYSA-N biphenylacetylene Chemical group C1=CC=CC=C1C#CC1=CC=CC=C1 JRXXLCKWQFKACW-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229920000767 polyaniline Polymers 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- KDKYADYSIPSCCQ-UHFFFAOYSA-N ethyl acetylene Natural products CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VUTWBSJIBAPTLY-UHFFFAOYSA-N 1-tert-butyl-2-(2-phenylethynyl)benzene Chemical group C(C)(C)(C)C1=C(C=CC=C1)C#CC1=CC=CC=C1 VUTWBSJIBAPTLY-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- QZBGOTVBHYKUDS-UHFFFAOYSA-N 5-amino-1,2-dihydropyrazol-3-one Chemical class NC1=CC(=O)NN1 QZBGOTVBHYKUDS-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229920000547 conjugated polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RGSINQHSYQBZBN-UHFFFAOYSA-N 1-(2-phenylethynyl)-2-(trifluoromethyl)benzene Chemical group FC(F)(F)C1=CC=CC=C1C#CC1=CC=CC=C1 RGSINQHSYQBZBN-UHFFFAOYSA-N 0.000 description 1
- MLOXIXGLIZLPDP-UHFFFAOYSA-N 2-amino-1h-imidazole-4,5-dicarbonitrile Chemical compound NC1=NC(C#N)=C(C#N)N1 MLOXIXGLIZLPDP-UHFFFAOYSA-N 0.000 description 1
- IOPDYTCCKSYLJG-UHFFFAOYSA-N 3,3,3-trifluoroprop-1-ynylbenzene Chemical group FC(F)(F)C#CC1=CC=CC=C1 IOPDYTCCKSYLJG-UHFFFAOYSA-N 0.000 description 1
- FASNPPWZLHQZAJ-UHFFFAOYSA-N 3,3-dimethylbut-1-ynylbenzene Chemical group CC(C)(C)C#CC1=CC=CC=C1 FASNPPWZLHQZAJ-UHFFFAOYSA-N 0.000 description 1
- JEDHEMYZURJGRQ-UHFFFAOYSA-N 3-hexylthiophene Chemical compound CCCCCCC=1C=CSC=1 JEDHEMYZURJGRQ-UHFFFAOYSA-N 0.000 description 1
- CKJRIVCXNKBSQQ-UHFFFAOYSA-N 9h-carbazole;2-phenylethynylbenzene Chemical group C1=CC=C2C3=CC=CC=C3NC2=C1.C1=CC=CC=C1C#CC1=CC=CC=C1 CKJRIVCXNKBSQQ-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- LLCSWKVOHICRDD-UHFFFAOYSA-N buta-1,3-diyne Chemical group C#CC#C LLCSWKVOHICRDD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- WBCLXFIDEDJGCC-UHFFFAOYSA-N hexafluoro-2-butyne Chemical group FC(F)(F)C#CC(F)(F)F WBCLXFIDEDJGCC-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- -1 polyphenylene acetylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- UZIXCCMXZQWTPB-UHFFFAOYSA-N trimethyl(2-phenylethynyl)silane Chemical group C[Si](C)(C)C#CC1=CC=CC=C1 UZIXCCMXZQWTPB-UHFFFAOYSA-N 0.000 description 1
- CCGULKCUSSEENW-UHFFFAOYSA-N trimethyl-[2-(2-phenylethynyl)phenyl]silane Chemical group C[Si](C)(C)C1=CC=CC=C1C#CC1=CC=CC=C1 CCGULKCUSSEENW-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
A resistive memory device having a resistor part for controlling a switching window. The resistive memory device of this disclosure can control a switching window to assure operational reliability thereof. In addition, since the memory device is realized by additionally providing only the resistor part for controlling a switching window to various resistive memory devices, it can be easily fabricated and applied to all current and voltage driving type resistive devices.
Description
Technical field
The present invention relates in general to the resistive memory device with the resistor part that is used for the control transformation window, more specifically, relate to a kind of resistive memory device, it additionally comprises the resistor part that is used for the control transformation window, therefore guarantee to produce good operating reliability by enough big conversion window.
Background technology
Usually, thus a large amount of memory electronic devices comprise bistable unit when applying voltage, cause from the high resistance to the low resistance or from low resistance to high-resistance conversion.Especially, as forming the notion that contrasts with the condenser type memory device, resistive memory device means to have resistance and the storage memory of data corresponding with such resistance variations that changes with the voltage that is applied.
Known chalkogenide (chalcogenide) material, semiconductor and all types of oxide and nitride have the resistance-type memory attribute.In addition, found that some organic materials have the resistance-type memory attribute.Although resistive memory device is because have high driving voltage and electric current, low durability and low film processing attribute (thin film handling property) but disadvantageous, but along with recent material engineering technology rapid development, the problems referred to above can be overcome.Therefore, resistive memory device is as non-volatile and have low energy consumption and highdensity multi-position action memory and receive publicity.The example of resistive memory device comprises phase transformation RAM, organic memory, oxide resistor formula RAM etc.
Among these memory devices, organic memory is made of the storage matrix (memory matrix) that comprises bottom electrode, top electrode and be clipped in the organic accumulation layer between the lower and upper electrode, and the unit that wherein is formed on the position that top electrode and bottom electrode intersect provides the bistable attribute.
In resistive memory device, memory cell is two kinds of resistance states of performance usually, be low resistance (set (set)) state and high resistance ((reset) resets) state, if wherein low resistance state is defined as data " 1 " and high resistance state is defined as data " 0 ", then two of data kinds of logic states can be stored in the memory cell.Such two states can be by applying voltage or electric current is changed.Like this, the difference of voltage or electric current is called as conversion window (switching window) between the two states.
Yet, at present, be difficult to guarantee the conversion window in oxide resistor formula RAM or the organic memory.Especially, organic memory becomes more serious problem owing to wide driving voltage distributes.Fig. 1 illustrates by being applied to voltage scanning after the organic memory only to measure the result's that the voltage corresponding with set-reset mode obtains curve chart.As can be seen from Figure 1, owing to distributing, wide driving voltage is difficult to guarantee to change window.
In resistive memory device, should fully guarantee to cause the voltage (electric current) of SM set mode and cause poor between the voltage (electric current) of reset mode, thereby device can be operated reliably.Yet traditional resistor formula memory device has the problem that can not guarantee to change window, causes the operating reliability of device to reduce.
Summary of the invention
Therefore, the present invention fully takes into account the above-mentioned problems in the prior art, a purpose of the present invention provides a kind of resistive memory device, and it is connected to this memory device by the resistor part that will be used for the control transformation window and energy control transformation driving voltage and electric current.
Another object of the present invention provides a kind of resistive memory device, and it can be used as WORM (write-once repeatedly reads memory) type memory, and it has good operating reliability.
To achieve these goals, the invention provides a kind of resistive memory device, it has the resistor part that is connected to this memory device and is used for the control transformation window extraly.
Among the present invention, the resistor part that is used for the control transformation window can be connected to the outside of memory device or can be arranged in the memory device.
Description of drawings
By detailed description below in conjunction with accompanying drawing, will more be expressly understood above and other objects of the present invention, feature and advantage, in the accompanying drawing:
Fig. 1 is the curve chart that the conversion window of traditional resistor formula memory device is shown;
Fig. 2 is the schematic cross section that illustrates according to the resistive memory device of first embodiment of the invention;
Fig. 3 A to 3C is the schematic cross section that illustrates according to the resistive memory device of second embodiment of the invention;
Fig. 4 is the curve chart of current-voltage (I-V) attribute that traditional resistor formula memory device and resistive memory device of the present invention are shown;
Fig. 5 is the equivalent circuit diagram that has the resistive memory device of the resistor part that is used for the control transformation window according to of the present invention;
Fig. 6 illustrates according to depending on of resistive memory device of the present invention to be used for the curve chart that the changing voltage of resistance of the resistor part of control transformation window changes;
Fig. 7 illustrates the curve chart that the driving voltage according to the resistance that depends on resistor of resistive memory device of the present invention changes;
Fig. 8 is the curve chart that the conversion repeatability of resistive memory device of the present invention is shown; And
Fig. 9 A and 9B are the curve charts that the WORM type attribute of resistive memory device of the present invention is shown.
Embodiment
Below, provide detailed description of the present invention with reference to the accompanying drawings.
Among the present invention, term " resistor part that is used for the control transformation window " thus mean and be connected to the parts that resistive memory device is shared voltage.The structure limitation especially in the present invention that is used for the resistor part of control transformation window can be a traditional ceramics resistor form or can form individual layer in the memory device.
Resistive memory device of the present invention is characterised in that and comprises the resistive memory device that is used to store the data corresponding with resistance variations and be connected to the resistor part that this memory device is used for the control transformation window.Resistive memory device of the present invention comprises bottom electrode, top electrode and is formed on resistance-type accumulation layer between the lower and upper electrode.Be applied at suitable voltage under the situation of memory device, thus the resistance-type accumulation layer work cause from the low resistance to the high resistance or from high resistance to low-resistance conversion.
The resistor part that is used for the control transformation window that is connected to memory device of the present invention can set in memory device or be connected to the outside of memory device.Like this, the resistor part that is used for the control transformation window can form various forms.
Fig. 2 illustrates the resistive memory device according to first embodiment of the invention, and it has the resistor part that is used for the control transformation window of the outside that is connected to memory device.Obvious by Fig. 2, comprise bottom electrode 10, top electrode 30, be clipped in resistance-type accumulation layer 20, the power supply unit 40 between bottom electrode 10 and the top electrode 30 and be connected in series in the resistor part that is used for the control transformation window 50 between power supply unit 40 and the memory device according to the resistive memory device of first embodiment of the invention.Power supply unit 40 is used for applying a biasing voltage to resistance-type accumulation layer 20 by lower and upper electrode 10 and 30, make resistance-type accumulation layer 20 from low resistance (set) state exchange to high resistance (resetting) state or from high resistance (resetting) state exchange to low resistance (set) state.
Fig. 3 A illustrates the resistive memory device according to second embodiment of the invention, and it has the resistor part that is used for the control transformation window that is arranged on wherein.As shown in Figure 3A, the resistor part that is used for the control transformation window 51 that comprises bottom electrode 10, top electrode 30, be clipped in the resistance-type accumulation layer 20 between lower and upper electrode 10 and 30 and on bottom electrode 10, form individual layer of the resistive memory device according to second embodiment of the invention.
Except the structure shown in Fig. 2 and the 3A, the resistor part that is used for the control transformation window can also form differently.For example, the resistance of metal wire (metal wire) can be used on the resistor part that is used for the control transformation window.Like this, regulate kind, length, thickness or shape as the metal wire of resistor part, thus the control transformation window.
Fig. 3 B and 3C illustrate the resistive memory device according to the modification of second embodiment of the invention.By Fig. 3 B as seen, resistive memory device also comprises the metal level 60 that is formed on the resistor part 52 that is used for the control transformation window.In this case, metal level 60 is formed by the material that is selected from the group that comprises aluminium, copper, gold, silver, titanium, platinum, tungsten, indium tin oxide etc., but is not limited thereto.In addition, metal level 60 can utilize vacuum moulding machine to be formed into 1 to 100nm thickness.For choosing ground, shown in Fig. 3 C, can be provided for the resistor part 52 of control transformation window with the form of thin metal wire.
In the present invention, the resistor part 51 and 52 that is used for the control transformation window can be formed by organic semiconducting materials or inorganic semiconductor material.Inorganic semiconductor material is selected from the group that comprises such as intrinsic semiconductor, extrinsic semiconductor and the compound semiconductor of silicon (Si), germanium (Ge) or carbon (C).Extrinsic semiconductor obtains by suitable dopant is added in the intrinsic semiconductor, and wherein the example of dopant includes but not limited to such as the III family element of B, Al, Ga or In or such as the V group element of P, As or Sb.
Among the present invention, the example of compound semiconductor includes but not limited to such as the III-V compounds of group of GaAs (GaAs) or gallium phosphide (GaP), such as the II-VI compounds of group of cadmium sulfide (CdS) or zinc telluridse (ZnTe), such as the IV-VI compounds of group of vulcanized lead (PbS), such as the IV-IV compounds of group of carborundum (SiC) or such as InGaAs or CuGaSe
2The ternary alloy three-partalloy compound semiconductor.
The organic semi-conductor example includes but not limited to 2-amino-4, and 5-dinitrile imidazoles (AIDCN, 2-amino-4,5-imidazoledicarbonitrile), 3-8-(oxyquinoline) aluminium (Alq
3Tris-8-(hydroxyquinoline) aluminum), 7,7,8,8-four cyano quino bismethane (TCNQ, 7,7,8,8-tetracyanoquinodimethane), 3-amino-5-hydroxypyrazoles (AHP, 3-amino-5-hydroxypyrazole), polyaniline (polyaniline) etc.In addition, can use conducting polymer or be doped with the insulating polymer of conductive compositions (conducting moiety).
The example of conducting polymer that can be used as the material of the resistor part that is used for the control transformation window of the present invention includes but not limited to polyacetylene (polyacetylene), polyaniline (polyaniline), polypyrrole (polypyrrole), polythiophene (polythiophene), poly-biphenyl acetylene (polydiphenylacetylene), poly-(tert-butyl group) biphenyl acetylene (poly (t-butyl) diphenylacetylene), poly-(trifluoromethyl) biphenyl acetylene (poly (trifluoromethyl) diphenylacetylene), poly-(bis trifluoromethyl) acetylene (poly (bistrifluoromethyl) acetylene), poly-(tert-butyl group biphenyl) acetylene (poly (t-butyldiphenyl) acetylene), poly-(TMS) biphenyl acetylene (poly (trimethylsilyl) diphenylacetylene), poly-(carbazole) biphenyl acetylene (poly (carbazole) diphenylacetylene), poly-diacetylene (polydiacetylene), polyphenylene acetylene (polyphenylacetylene), poly-pyrimidine acetylene (polypyridineacetylene), polymethoxy phenylacetylene (polymethoxyphenylacetylene), polymethyl-benzene ethyl-acetylene (polymethylphenylacetylene), poly-(tert-butyl group) phenylacetylene (poly (t-butyl) phenylacetylene), polynitrobenzene ethyl-acetylene (polynitrophenylacetylene), poly-(trifluoromethyl) phenylacetylene (poly (trifluoromethyl) phenylacetylene), poly-(TMS) phenylacetylene (poly (trimethylsilyl) phenylacetylene), and derivative.
In the preferred case, can use the insulating polymer that is doped with conductive compositions.The example of insulating polymer includes but not limited to polymethyl methacrylate (PMMA), polystyrene (PS), Merlon (PC), polyolefin (polyolefin), polyester (polyester), polyamide (polyamide), polyimides (polyimide), polyurethane (polyurethane), polyacetals (polyacetal), polysilicon and polysulfonate (polysulfonate).The example of dopant includes but not limited to carbazole (carbazole), terephthalic acid (TPA) (TPA), 1-biphenyl-4, and the 4-diamine (1-diphenyl-4,4diamine:TPD) etc.
Among the present invention, be arranged under the situation of switching device at the resistor part 51 or 52 that is used for the control transformation window, it can utilize any film well known in the art to form technology and form, and for example spin coating, ink jet printing, roller to roller coat cover (roll-to-roll coating), heat deposition etc.
Each comprises at least a electric conducting material that is selected from the group that contains metal, metal alloy, metal nitride, metal oxide, metal sulfide, carbon, conducting polymer and organic conductor bottom electrode 10 and top electrode 30.Particularly, the example of electrode material includes but not limited to aluminium (Al), gold (Au), silver (Ag), platinum (Pt), copper (Cu), titanium (Ti), tungsten (W) and indium tin oxide (ITO).
Resistive memory device of the present invention is the resistive memory device with the resistance that changes with the voltage that is applied, for example organic memory, oxide resistor formula RAM or phase transformation RAM.
According to the type of memory device, the resistance-type accumulation layer 20 of memory device of the present invention can have different structures.For example, at resistive memory device of the present invention is under the situation of organic memory, and resistance-type accumulation layer 20 can form by being selected from conjugated polymer (conjugated polymer), anisotropic conductive material, organic semiconductor and containing at least a material that intramolecular charge shifts the polymer of complex compound (intramolecularcharge-transfer complex).
In addition, at memory device of the present invention is under the situation of phase transformation RAM, and resistance-type accumulation layer 20 can be formed by the chalcogenide material such as germanium-antimony-tellurium (Ge-Sb-Te), arsenic-antimony-tellurium (As-Sb-Te), tin-antimony-tellurium (Sn-Sb-Te), tin-indium-antimony-tellurium (Sn-In-Sb-Te), arsenic-germanium-antimony-tellurium (As-Ge-Sb-Te), niobium-antimony-tellurium (Nb-Sb-Te), tungsten-antimony-tellurium (W-Sb-Te) etc.
Below, the operation of resistive memory device of the present invention is described.Fig. 4 shows the traditional resistor formula memory device (r with the resistor part that is used for the control transformation window
Ext=0) and resistive memory device (R of the present invention
Ext=100 Ω) current-voltage curve (I-V curve).
With reference to Fig. 4 as can be seen, resistive memory device has low-resistance SM set mode and high-resistance reset mode.High resistance state is corresponding to logical zero, and low resistance state is corresponding to logical one.Even when not applying voltage or electric current, also can keep long-time for every kind in two kinds of different resistance states.When applying low-down voltage and detect electric current, corresponding state can be read.Therefore, device of the present invention can be used as memory device.
Fig. 5 illustrates the equivalent electric circuit of memory device of the present invention shown in Figure 2.Suppose that circuit forms by this way, promptly be used for the resistor part R of control transformation window
ExtBe connected to resistive memory device R
Switch, the part that demarcates of total voltage that is applied to whole circuit is according to two resistor part R
SwitchAnd R
ExtResistance ratio and be applied to memory device, so the conversion driving voltage and current of memory device can randomly control, and is represented as following equation 1:
Equation 1:
In addition, describe schematic circuit shown in Figure 5, promptly suppose the resistance R of SM set mode based on such supposition
SetBe 100 Ω, the resistance R of reset mode
ResetBe 100k Ω, be transformed into the required threshold voltage V of SM set mode from reset mode
Th (reset → set)Be 1V, be transformed into the required threshold voltage V of reset mode from SM set mode
Th (set → reset)Be 2V.
Under the situation of the resistor part that is used for the control transformation window that has connected 100 Ω, when reset mode is transformed into SM set mode and for example applies the voltage of 1V, because R
Reset(100k Ω) is much larger than R
Ext(100 Ω) is so almost whole external voltage is applied to memory cell.On the other hand, although memory cell needs the voltage of 2V to be used for being transformed into reset mode from SM set mode, because R
Set(100 Ω) equals R
Ext(100 Ω) is so voltage is applied to memory cell to be divided into 1/2 state.Therefore, for memory cell is transformed into reset mode from SM set mode, should apply the total voltage of 4V.
As shown in Figure 6, required changing voltage depends on the size of non-essential resistance (resistance that is used for the resistor part of control transformation window) and linear the increase from SM set mode to the reset mode.Simultaneously, at reset mode, because V
SwitchWith V
TotalMuch at one, so when high resistance was transformed into low resistance, irrelevant with the size of non-essential resistance, driving voltage seldom changed.In this way, along with the size increase of non-essential resistance, the driving voltage of SM set mode seldom changes, and the driving voltage of reset mode increases, and causes the conversion window (Fig. 4 and 6) that increases.
In addition, memory device of the present invention can be used as WORM type memory.When the size of the non-essential resistance of memory device enlarges markedly to high state, be transformed into low resistance state and be transformed into the required voltage of high resistance state then again and increase greatly, therefore conversion is infeasible.Therefore, memory device of the present invention can be used as WORM type memory.Promptly, under the big or small less situation of the resistance of the resistor part that is used for the control transformation window, memory device of the present invention can be used as nonvolatile memory, and under the bigger situation of the size of the resistance of the resistor part that is used for the control transformation window, it can be used as WORM type memory.Principle of the present invention can be used for various switching devices (switching device), and memory device.
Under the inspiration of example below, can obtain better understanding of the present invention, the example below proposing is used for explanation, and can not be interpreted as limitation of the present invention.
＜example 〉
1. the manufacturing of test storage device
Utilize hot evaporation (thermal evaporation) with al deposition on substrate as bottom electrode.Then, on following aluminium electrode, utilize spin coating to apply P3HT (poly--the 3-hexyl thiophene) solution and cured 10 minutes, thereby form organic memory unit at 65 ℃.Then, last Au electrode utilizes hot vapor deposition on memory unit, thus the manufacturing test device.Like this, organic memory unit is that 50nm is thick, and electrode is that 80nm is thick, and every layer thickness utilizes α-step appearance measuring instrument (alpha-step profilometer) to measure.The ceramic resistor that serves as the resistor part that is used for the control transformation window is connected to the outside of this device.The thickness of electrode of deposition is utilized quartz crystal monitor (quartz crystal monitor) control.
2. the measurement of the conversion window of test component
During the operational testing device, measure the driving voltage that the size with the resistance of the resistor part that is used for the control transformation window changes.The result is presented among Fig. 7.Obvious by Fig. 7, be under the situation of 30 Ω at the resistance of the resistor part that is used for the control transformation window, the conversion window is zero.In addition, when resistance became 60 Ω, the conversion window was increased to about 0.8V.In addition, when the resistance of the resistor part that is used for the control transformation window was 90 Ω, the conversion window increased to 1.6V.Therefore, in resistive memory device of the present invention, along with the size of the resistance of the resistor part that is used for the control transformation window increases, the driving voltage (●) of SM set mode seldom changes, and the driving voltage (▲) of reset mode increases, thereby causes bigger conversion window.
3. the check of the conversion repeatability of test component
Thereby the external resistor of 50 Ω is connected to this test storage device guarantees memory window.Thereafter, pulse voltage is applied to test component and measures the change-over period.The result provides in Fig. 8.+ 7V ,-1.5V ,-0.5V ,-6V and-pulse voltage of 0.5V is applied sequentially to each cycle, wherein+7V and-1.5V is corresponding to the changing voltage of SM set mode ,-0.5V is the voltage that is used to read ,-6V is corresponding to the changing voltage of the reset mode that is used to wipe.As carrying out cyclic process 200 times or result more frequently, confirm that memory device of the present invention can realize 90% or higher high performance reproducibility.
4. the check of WORM type attribute
In order to confirm whether resistive memory device of the present invention can be used as WORM type memory device, and the ceramic resistor that serves as the 5k Ω of the resistor part that is used for the control transformation window is connected to test component.Device is observed the conversion that whether resets when applying 15V after 3V set conversion.The I-V curve display is in Fig. 9 A and 9B.As can be seen, device such as Fig. 9 A are shown in 3V set conversion, but in ± 15V the conversion (Fig. 9 B) that do not reset.
As previously mentioned, the invention provides resistive memory device with the resistor part that is used for the control transformation window.Resistive memory device of the present invention can fully be guaranteed to cause the voltage (or electric current) of SM set mode and cause poor (conversion window) between the voltage (or electric current) of reset mode, thereby show good operating reliability.
In addition, memory device of the present invention is realized by the resistor part that only additionally is provided for the control transformation window to traditional or following resistive memory device, thereby can easily be made and can be applied to all electric currents and voltage driven type resistance-type device.
Disclose the preferred embodiments of the present invention although be used for illustration purpose, one of skill in the art will appreciate that under the situation of thought of the present invention that does not depart from claim definition and scope, various modifications, interpolation and to substitute be feasible.
Claims (11)
1. a resistive memory device comprises the resistor part that is used for the control transformation window.
2. memory device as claimed in claim 1, the wherein said resistor part that is used for the control transformation window is connected to the outside of described memory device.
3. memory device as claimed in claim 1, the wherein said resistor part that is used for the control transformation window is arranged in the described memory device.
4. memory device as claimed in claim 3, wherein said memory device comprise the bottom electrode that is disposed in order, the resistor part that is used for the control transformation window, resistance-type accumulation layer and top electrode.
5. memory device as claimed in claim 4, wherein said memory device also comprise the described resistor part of control transformation window and the metal level between the described resistance-type accumulation layer of being used for.
6. memory device as claimed in claim 2, the wherein said resistor part that is used for the control transformation window is a metal wire.
7. memory device as claimed in claim 1, the wherein said resistor part that is used for the control transformation window is formed by organic semiconducting materials or inorganic semiconductor material.
8. memory device as claimed in claim 7, wherein said organic semiconducting materials are conducting polymers or mix with the insulating polymer of conductive compositions.
9. memory device as claimed in claim 7, wherein said inorganic semiconductor material is selected from the group that comprises intrinsic semiconductor, extrinsic semiconductor and compound semiconductor.
10. memory device as claimed in claim 1, wherein said memory device are organic memory, oxide resistor formula RAM or phase transformation RAM.
11. memory device as claimed in claim 1, wherein said memory device are WORM type memory devices.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20050011958 | 2005-02-14 | ||
| KR11958/05 | 2005-02-14 | ||
| KR76228/05 | 2005-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1828962A true CN1828962A (en) | 2006-09-06 |
Family
ID=36947174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100070279A Pending CN1828962A (en) | 2005-02-14 | 2006-02-14 | Resistive memory device having resistor part for controlling switching window |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101036975B1 (en) |
| CN (1) | CN1828962A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103427021A (en) * | 2013-08-09 | 2013-12-04 | 中国科学院上海硅酸盐研究所 | Memory unit of low-power resistive random access memory and preparation method of memory unit |
| CN104704565A (en) * | 2012-10-09 | 2015-06-10 | 沙特基础工业公司 | Resistive memory device fabricated from single polymer material |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101450093B1 (en) * | 2013-10-22 | 2014-10-15 | 한국과학기술연구원 | Resistance random access memory device with hetero-junction oxides structure |
| WO2015186975A1 (en) * | 2014-06-03 | 2015-12-10 | 제주대학교 산학협력단 | Memory cell using memristor |
| KR101577532B1 (en) * | 2014-06-03 | 2015-12-16 | 제주대학교 산학협력단 | Memory cell using memresistor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0621531A (en) * | 1992-07-01 | 1994-01-28 | Rohm Co Ltd | Neuro element |
| US6950331B2 (en) | 2000-10-31 | 2005-09-27 | The Regents Of The University Of California | Organic bistable device and organic memory cells |
| EP1434232B1 (en) * | 2001-08-13 | 2007-09-19 | Advanced Micro Devices, Inc. | Memory cell |
| KR100583115B1 (en) * | 2003-12-13 | 2006-05-23 | 주식회사 하이닉스반도체 | Phase change resistor cell, non-volatile memory device and contol method using the same |
-
2005
- 2005-08-19 KR KR1020050076228A patent/KR101036975B1/en active IP Right Grant
-
2006
- 2006-02-14 CN CNA2006100070279A patent/CN1828962A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104704565A (en) * | 2012-10-09 | 2015-06-10 | 沙特基础工业公司 | Resistive memory device fabricated from single polymer material |
| CN104704565B (en) * | 2012-10-09 | 2017-04-19 | 沙特基础工业公司 | Resistive memory device fabricated from single polymer material |
| CN103427021A (en) * | 2013-08-09 | 2013-12-04 | 中国科学院上海硅酸盐研究所 | Memory unit of low-power resistive random access memory and preparation method of memory unit |
| CN103427021B (en) * | 2013-08-09 | 2015-11-18 | 中国科学院上海硅酸盐研究所 | Memory cell of low power consumption resistance formula random asccess memory and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101036975B1 (en) | 2011-05-25 |
| KR20060091221A (en) | 2006-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7656696B2 (en) | Resistive memory device having resistor part for controlling switching window | |
| Guo et al. | Functional organic field‐effect transistors | |
| Kim et al. | Electrical memory devices based on inorganic/organic nanocomposites | |
| Ouyang et al. | Organic memory device fabricated through solution processing | |
| US6707060B2 (en) | Column-row addressable electric microswitch arrays and sensor matrices employing them | |
| CN1201396C (en) | A method in the fabrication of organic thin-film semiconductor devices | |
| Ouyang | Emerging Resistive Switching Memories | |
| Narasimhan Arunagirinathan et al. | Solution processed donor–acceptor polymer based electrical memory device with high on/off ratio and tunable properties | |
| Yang et al. | A multilevel vertical photonic memory transistor based on organic semiconductor/inorganic perovskite quantum dot blends | |
| Padma et al. | Tunable switching characteristics of low operating voltage organic bistable memory devices based on gold nanoparticles and copper phthalocyanine thin films | |
| CN101212021A (en) | Organic memory device and fabrication method thereof | |
| CN1828962A (en) | Resistive memory device having resistor part for controlling switching window | |
| JP5592255B2 (en) | Ferroelectric devices and tunable injection barriers | |
| US20080089113A1 (en) | Organic-Complex Thin Film For Nonvolatile Memory Applications | |
| US7544966B2 (en) | Three-terminal electrical bistable devices | |
| Chen | Printed electrochemical devices using conducting polymers as active materials on flexible substrates | |
| Chidambara et al. | Electrical bistability studies on vacuum evaporated copper phthalocyanine (CuPc)/fullerene (C60) bilayers | |
| Patil et al. | Dopant-configurable polymeric materials for electrically switchable devices | |
| Salaoru et al. | Non-volatile memory device-using a blend of polymer and ferroelectric nanoparticles | |
| Li et al. | Electrical switching of molecular thin films filled in metal oxide cracks | |
| Pirovano et al. | Organic electrically bistable materials for non-volatile memory applications | |
| Wang et al. | Bipolar resistive switching based on bis (8-hydroxyquinoline) cadmium complex: Mechanism and non-volatile memory application | |
| Nam et al. | Effect of electrode materials and fabrication methods on resistive switching behavior of poly (3-hexylthiophene-2, 5-diyl)-based resistive random access memory | |
| Barard | Time-of-Flight Charge Transport Studies on Triarylamine and Thiophene Based Polymers | |
| Aleksandrova et al. | Interface characterization of PPV–derivative based structures by direct current electrical measurements |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| CI02 | Correction of invention patent application |
Correction item: Priority Correct: 2005.08.19 KR 76228/05 False: Lack of priority second Number: 36 Page: The title page Volume: 22 |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: PRIORITY; FROM: MISSING THE SECOND ARTICLE OF PRIORITY TO: 2005.8.19 KR 76228/05 |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |