CN1828809B - Electron emission device and its method of fabrication and electron emission display containing same - Google Patents
Electron emission device and its method of fabrication and electron emission display containing same Download PDFInfo
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- CN1828809B CN1828809B CN2006100070103A CN200610007010A CN1828809B CN 1828809 B CN1828809 B CN 1828809B CN 2006100070103 A CN2006100070103 A CN 2006100070103A CN 200610007010 A CN200610007010 A CN 200610007010A CN 1828809 B CN1828809 B CN 1828809B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
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- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
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Abstract
In an electron emission device and its method of fabrication, a plurality of holes are smoothly formed within a limited region, and an ohmic layer connected to a signal line is formed using some of the plurality of holes. The electron emission device includes: a substrate; a first electrode arranged on the substrate; a first insulating layer arranged on the first electrode and having a plurality of first holes; an ohmic layer arranged in at least one of the plurality of first holes and electrically connected to the first electrode; a signal line electrically connected to the ohmic layer and adapted to supply a voltage to the first electrode via the ohmic layer; an emitter arranged in the plurality of first holes excluding the at least one hole having the ohmic layer arranged therein and electrically connected to the first electrode; and a second electrode arranged on the first insulating layer and having a plurality of gate holes corresponding to the plurality of first holes excludingthe at least one hole having the ohmic layer arranged therein.
Description
Technical field
The present invention relates to a kind of electron emission device, its manufacture method and comprise the electron emission display device of this electron emission device, and more specifically, relate to a kind of electron emission device, its manufacture method and comprise the electron emission display device of this electron emission device, its mesopore is used to form the ohm layer that is connected to holding wire.
Background technology
Usually, electron emission device has such structure, and wherein when applying electric field between cathode electrode and gate electrode, the reflector that is electrically connected to cathode electrode is by the quantum tunneling effect emitting electrons.This electron emission device is categorized as thermionic cathode type or cold cathode type, and wherein thermionic cathode type and cold cathode type adopt thermionic cathode and cold cathode as electron emission source respectively.
The cold cathode type electron emission device comprises for example field emission array (FEA), surface conductance reflector (SCE), metal-insulator-metal (MIM), metal-insulator semiconductor (MIS) (MIS), ballistic electron surface emitting (BSE) or the like.
Adopt such electron emission device, can realize electron emission display device, various backlight, be used for electron-beam cell of photoetching or the like.Wherein, electron emission display device comprises and is provided with electron emission device with the cathode substrate of emitting electrons be provided with the anode substrate of fluorescence coating that institute's electrons emitted and the collision of this fluorescence coating are with luminous.In common electron emission display device, cathode substrate has rectangular, wherein cathode electrode intersects with gate electrode, and a plurality of electron emission devices are limited in these intersection regions, in addition, anode substrate comprises fluorescence coating and is connected to the anode electrode of this fluorescence coating, thereby anode electrode applies high voltage to quicken from electron emission device to the fluorescence coating institute electrons emitted that is formed on the anode substrate to fluorescence coating.
As the example of FEA type electron emission device, there is the conventional electrical ballistic device that is disclosed among the Korean Patent No.0370246.This conventional FEA type electron emission device comprises the first porose insulating barrier of substrate, bottom electrode, ohm layer, formation, be formed on reflector, gate electrode in the described hole, be formed on the gate electrode same level on and be arranged on first focusing electrode around the gate electrode and cross second insulating barrier and be formed on second focusing electrode on first focusing electrode.Adopt this structure, the conventional electrical ballistic device has improved from the congregational rate of reflector institute electrons emitted bundle.In addition, ohm layer is used to improve the contact performance between reflector and the bottom electrode.
First insulating barrier of above-mentioned electron emission device forms between bottom electrode and gate electrode has predetermined thickness, therefore with bottom electrode and grid electrode insulating.Bottom electrode and gate electrode are used for providing electric field to reflector.In addition, bottom electrode is corresponding to cathode electrode.Such insulating barrier can by the thick film growing method of printing and annealing insulating material or for example the film growth method of chemical vapor deposition (CVD) etc. form.
The thick film growing method can be used to form large scale and not expensive insulating barrier.Yet in the thick film growing method, when insulating barrier during at high annealing, the resistance of ohm layer can change, and is difficult to form the ohm layer with required resistance.Particularly, in the thick film growing method, insulating barrier forms thickly, so the diameter in hole becomes big.In addition, the hole of insulating barrier has rough surface, is uneven thereby foreign material may be formed in the hole and hole.Be inserted between cathode electrode and the gate electrode and predetermined voltage be applied under the situation between cathode electrode and the gate electrode at insulating barrier with predetermined thickness, along with the insulating barrier thickening, the withstand voltage and the temperature of serving as the insulating barrier of dielectric material uprise, and have therefore increased power consumption.
Opposite with the thick film growing method, in film growth method, form ohm layer easily and need not high-temperature annealing process.Yet,, be difficult to assemble electron beam because insulating barrier forms thinly.
In the conventional electrical ballistic device, be difficult in finite region to form desired number, wherein be formed with the hole of reflector respectively, and also be difficult to form ohm layer by this hole.
Summary of the invention
Therefore, one aspect of the present invention provides a kind of electron emission device and manufacture method thereof, and wherein a plurality of holes are formed in the finite region glossily, and adopts some formation in a plurality of holes to be connected to the ohm layer of holding wire.
Another aspect of the present invention provides a kind of electron emission display device that comprises above-mentioned electron emission device.
According to an aspect of the present invention, provide a kind of electron emission device, it comprises: substrate; First electrode is arranged on the described substrate; First insulating barrier is arranged on described first electrode and has a plurality of first holes; Ohm layer is arranged at least one of described a plurality of first holes, and is electrically connected to described first electrode; Second insulating barrier, form by thin film growth process, described second insulating barrier is positioned on described first insulating barrier and the ohm layer and covers the inner surface in described a plurality of first holes except described at least one hole that wherein is provided with described ohm layer, thereby forms second hole in described first hole; Holding wire is electrically connected to described ohm layer and is used for via described ohm layer to described first electrode supply voltage; Reflector is arranged in second hole, and is electrically connected to described first electrode; With second electrode, be arranged on described second insulating barrier, and have a plurality of grid hole, described grid hole is corresponding to second hole.
Described first insulating barrier preferably has the thickness of 5 μ m to 9 mu m ranges, and wherein said second insulating barrier has the thickness of 1 μ m to 3 mu m ranges.
Described electron emission device preferably also comprises gate electrode, and it is arranged on described second electrode and has a plurality of control holes corresponding to described a plurality of second holes.
Described gate electrode preferably includes the netted conducting strip that is coated with the 3rd insulating barrier.
According to a further aspect in the invention, provide a kind of method of making electron emission device, this method comprises: form first electrode on substrate; Form holding wire, it is electrically connected to first electrode on described substrate, and is used for providing voltage to described first electrode; On described first electrode, form first insulating barrier by printing and annealing insulating material; In described first insulating barrier, form a plurality of first holes; In at least one of described a plurality of first holes, form ohm layer, to be electrically connected to described first electrode and holding wire; Form second insulating barrier by thin film growth process, described second insulating barrier is positioned on described first insulating barrier and the ohm layer and covers the inner surface in described a plurality of first holes except described at least one hole that wherein is provided with described ohm layer, thereby forms second hole in described first hole; Form second electrode on described second insulating barrier, it has reservation shape in the direction with first electrode crossing; With in second hole, form reflector, to be electrically connected to described first electrode.
In accordance with a further aspect of the present invention, provide a kind of electron emission display device, having comprised: first and second substrates face with each other; First electrode is arranged on described first substrate; First insulating barrier is arranged on described first electrode and has a plurality of first holes; Ohm layer is arranged at least one of described a plurality of first holes, and is electrically connected to described first electrode; Second insulating barrier, form by thin film growth process, described second insulating barrier is positioned on described first insulating barrier and the ohm layer and covers the inner surface in described a plurality of first holes except described at least one hole that wherein is provided with described ohm layer, thereby forms second hole in described first hole; Holding wire is electrically connected to described ohm layer and is used for via described ohm layer to first electrode supply voltage; Reflector is arranged in second hole, and is electrically connected to described first electrode; Second electrode is arranged on described second insulating barrier, and has a plurality of grid hole, and described grid hole is corresponding to second hole; Fluorescence coating is arranged on described second substrate and is used in response to from the collision of described reflector institute electrons emitted and luminous; And anode electrode, be arranged on described second substrate and be connected to described fluorescence coating.
Described first insulating barrier preferably has the thickness of 5 μ m to 9 mu m ranges, and wherein said second insulating barrier has the thickness of 1 μ m to 3 mu m ranges.
Described electron emission display device preferably also comprises grid electrode (grid electrode), and it is arranged on described second electrode and has a plurality of control holes corresponding to described a plurality of second holes.
Described grid electrode preferably includes the netted conducting strip that is coated with the 3rd insulating barrier.
Described reflector preferably include carbon nano-tube, graphite, gnf, diamond-like-carbon, C60, silicon nanowires and combination thereof one of at least.
Described electron emission display device preferably also comprise be provided with on described second substrate and response from the non-luminous dark space of the electronics with its collision of reflector emission.
Description of drawings
By engaging the referenced drawings following detailed, more complete understanding of the present invention and many attendant advantages thereof will be more obvious, and the present invention will be more readily understood, and in the accompanying drawings, identical reference number is represented same or analogous element, wherein:
Fig. 1 is the partial section of conventional electrical ballistic device;
Fig. 2 is the partial plan layout according to the electron emission device of the embodiment of the invention;
Fig. 3 is the partial section according to the electron emission device of the embodiment of the invention;
Fig. 4 A is a view according to the electron emission device manufacture method of the embodiment of the invention to 4C;
Fig. 5 is the sectional view of employing according to the electron emission display device of the electron emission device of the embodiment of the invention.
Embodiment
Fig. 1 is the sectional view of conventional FEA type electron emission device.With reference to Fig. 1, the conventional electrical ballistic device comprises substrate 100, bottom electrode 110, ohm layer 120, form the first porose insulating barrier 130, be formed on reflector 132, gate electrode 142 in the hole, be formed on gate electrode 142 same levels in and first focusing electrode 144 that around gate electrode 142, is provided with and cross second insulating barrier 160 and be formed on second focusing electrode 170 on first collector electrode 144.Adopt this structure, the conventional electrical ballistic device has improved the convergent effect of the electron beam of being launched from reflector 132.In addition, ohm layer 120 is used to improve the contact performance between reflector 132 and the bottom electrode 110.
First insulating barrier 130 of above-mentioned electron emission device forms between bottom electrode 110 and gate electrode 142 has predetermined thickness, therefore with bottom electrode 110 and gate electrode 142 insulation.Bottom electrode 110 and gate electrode 142 are used for providing electric field to reflector 132.In addition, bottom electrode 110 is corresponding to cathode electrode.Such insulating barrier can by the thick film growing method of printing and annealing insulating material or for example the film growth method of chemical vapor deposition (CVD) etc. form.
After this, describe with reference to the accompanying drawings according to one exemplary embodiment of the present invention.When ground floor was described as being positioned on the second layer, ground floor can be located immediately on the second layer, and perhaps the 3rd layer can be inserted between the ground floor and the second layer.In addition, for the convenience described and clear and exaggerated every layer thickness and size.And identical in the whole text reference number is represented similar elements.
Fig. 2 is the partial plan layout according to the electron emission device of the embodiment of the invention, and Fig. 3 is the partial section according to the electron emission device of the embodiment of the invention.
With reference to Fig. 2 and 3, electron emission device comprises substrate 201, first electrode 203, holding wire 204, first insulating barrier 205, ohm layer 207, second insulating barrier 209, first hole 211, second electrode 213 and reflector 215.
Composition holding wire 204 when forming first electrode 203 perhaps forms holding wire 204 on substrate 201 by the processing electric conducting material.In addition, holding wire 204 is electrically connected to ohm layer 207.Holding wire 204 is connected to driver or control circuit with first electrode 203 of electron emission device.And holding wire 204 is connected to first electrode of each electron emission device, and will be sent to predetermined electron emission device from the data-signal or the sweep signal of data driver (not shown) or scanner driver (not shown).
First insulating barrier 205 is formed on the substrate 201 and first electrode 203, and with first electrode 2 and second electrode, 213 electric insulations.First insulating barrier 205 for example contains PbO and SiO by insulating material
2The glass material of combination make, and be formed with a plurality of first holes 211, be used for part and expose first electrode 203.First insulating barrier 205 that is used to restraint focusing has thickness " H1 " and forms by the thick film growing method.
Second insulating barrier 209 is formed on first insulating barrier 205 and the ohm layer 207, and is formed with second hole 211 corresponding to the hole of first insulating barrier 205.For example, second insulating barrier 209 forms spin-coating glass (Spin on Glass, SOG) insulating barrier.Such SOG layer is used in 1 μ m or the following thin-film technique usually.By repeating SOG layer depositing technics three to five times, form the thickness " H2 " of second insulating barrier.
According to embodiments of the invention, electron emission device can also comprise grid electrode (with reference to " 580 " of Fig. 5).This grid electrode can be set to the net form conducting strip, and it is arranged on the supplemental dielectric layer (with reference to " 570 " of Fig. 5) that is formed on second insulating barrier 209 and second electrode 213.
Adopt this structure, have the structure different with the conventional electrical ballistic device according to the electron emission device of the embodiment of the invention.That is, the conventional electrical ballistic device has wherein that diameter becomes big structure along with the thickness of insulating layer thickening, and the hole that therefore is difficult to the thick dielectric layer by having suitable thickness forms and is used to restraint the ohm layer of focusing.On the other hand, electron emission device according to the embodiment of the invention has such structure, the hole that wherein has the proper number of suitable thickness is formed in first insulating barrier, and ohm layer forms by in the hole of a plurality of formation at least one, thereby is easy to form ohm layer.In addition, according to embodiments of the invention, after the annealing of first insulating barrier, form ohm layer, thereby ohm layer can not be out of shape owing to the annealing process of first insulating barrier.
In the conventional electrical ballistic device, insulating barrier forms thickly by common thick film growth technique, thereby the hole that is formed in the insulating barrier has rough surface, therefore makes the technology of back formation reflector limited or complicated.On the other hand, electron emission device according to the embodiment of the invention has such structure, wherein ohm layer is formed at least one hole in first insulating barrier, and additionally on first insulating barrier and ohm layer forms second insulating barrier, thereby the hole is run through first and second insulating barriers and formed glossily.Therefore, when the dorsal part exposure technology by the back forms reflector, reduced because the defective reflector that foreign material caused on the inwall of hole.
Fig. 4 A is a view according to the manufacture method of the electron emission device of the embodiment of the invention to 4C.
With reference to Fig. 4 A, depositing conductive material and it is carried out photoetching process on substrate 201, so described first electrode 203 of composition and holding wire (with reference to " 204 " of Fig. 2).First electrode 203 and holding wire electricity disconnect.Holding wire is used for transmitting the signal that drives electron emission device to first electrode 203.
Then, therefore printing and annealing insulating material form first insulating barrier 205 on the substrate 201 with first electrode 203 and holding wire.Insulating material is printed thickly and has the thickness of about 10 μ m to 15 μ m, is annealed then to have about 5 μ m to 9 μ m thickness, therefore forms first insulating barrier 205.Insulating material comprises and comprises PbO and SiO
2The glass material of combination.In this technology, guaranteed the thickness of insulating barrier, thereby stably focused on from the bundle of electron emission device emission.
Then, in first insulating barrier 205, form a plurality of holes 210 by photoetching process.In this technology, the rough inner surface in hole 210 ground forms.Therefore, when when the CNT slurry being carried out dorsal part exposure and form reflector, the rough surface in hole 210 may form short circuit.Yet this problem can solve by second insulating barrier 209.
Then, shown in Fig. 4 B, form ohm layer 207 by adopting predetermined ohmic material to fill at least one hole 210.Ohm layer 207 is electrically connected to first electrode 203 and the holding wire.Therefore, ohm layer 207 has improved the contact characteristics between the holding wire and first electrode 203, has therefore guaranteed the durability and the uniformity of electron emission device.
Then, shown in Fig. 4 C,, form second insulating barrier 209 by on first insulating barrier 205 and ohm layer 207, repeating deposit SOG layer several times.Second insulating barrier 209 has the thickness of 1 μ m to 3 μ m.Then, on second insulating barrier 209, form second hole 211 by photoetching process.Form the inner surface in second hole 211 glossily by thin film growth process.
Then, on second insulating barrier 209, form second electrode, and unshowned reflector is formed in second hole 211.
Therefore, in electron emission device, on insulating barrier, form the hole of sufficient amount with the thickness that is suitable for restrainting focusing according to the embodiment of the invention.And at least one hole, form ohm layer with expectation resistance, therefore be easy to make electron emission device with excellent properties.
Fig. 5 is the sectional view that adopts according to the electron emission display device of the embodiment of the invention.
With reference to Fig. 5, comprise cathode substrate 500 and anode substrate 600 according to the electron emission display device of the embodiment of the invention.Cathode substrate 500 is used as the electronics emission substrate that has electron-emitting area on it, and anode substrate 600 is used as the imaging substrate that has image display area on it, and this anode substrate is owing to showing predetermined image with collision from the electron-emitting area institute electrons emitted of cathode substrate 500.In addition, cathode substrate 500 comprises above-mentioned electron emission device.
More specifically, cathode substrate 500 comprises back substrate 510, first electrode 520, holding wire (with reference to " 204 " of Fig. 2), first insulating barrier 532, ohm layer 534, second insulating barrier 536, second electrode 540, hole 550 and reflector 560.Holding wire is used as the circuit that transmits the prearranged signals that is used to drive reflector 560 to first electrode 520, and ohm layer 534 is used to improve the contact characteristics between the holding wire and first electrode 520.Cathode substrate has the structure identical with above-mentioned electron emission device, thereby has omitted the description that repeats.
Cathode substrate 500 also comprises the 3rd insulating barrier 570 and grid electrode 580.The 3rd insulating barrier 570 is formed on second electrode 540 of cathode substrate 500.The 3rd insulating barrier 570 is inserted between second electrode 540 and adjacent second electrode, perhaps is set in a zone and second electrode 540 and the adjacent second electrode part overlap, as long as it is not subjected to the influence of the whole parasitic capacitance of cathode substrate 500.Preferably, the 3rd insulating barrier 570 has the thickness that changes from 10 μ m to 40 μ m, focuses on the bundle that improves grid electrode.
Grid electrode 580 is formed on the cathode substrate 500, and is formed with second hole 590, passes this hole from reflector 560 electrons emitted.In addition, the electronics that the fluorescence coating 620 that grid electrode 580 is assembled anode substrate 600 is advanced, and prevent that electrode is owing to electric arc damages.For example, grid electrode 580 protection second electrode 540, reflector 560, first electrode 520 etc. are avoided the influence of the anode electric field that caused by the high voltage that is applied to anode 640.On cathode substrate 500, grid electrode 580 forms netted conducting strip.And grid electrode 580 can comprise formation predetermined insulating barrier (not shown) thereon.Preferably, be formed on grid electrode 580 lip-deep insulating barriers and comprise PbO and SiO
2To improve the withstand voltage characteristic between first electrode 520, second electrode 540 and the grid electrode 580.
Anode substrate 600 comprises the preceding substrate 610 of the back substrate 510 of faces cathode substrate 500, the fluorescence coating 620 before being formed in the active zone of substrate 610 and be formed on before metallic film 640 on substrate 610 and the fluorescence coating 620.
Before substrate 610 comprise transparent material, glass etc. for example.
Emitter region before fluorescence coating 620 forms in the active zone of substrate 610, and since with from the collision of 560 electrons emitted of reflector of cathode substrate 500 and luminous.A side of substrate 610 before fluorescence coating 620 is formed on, and have reservation shape, for example bar shaped.
Adopt metallic film 640 as anode electrode, to provide high voltage to fluorescence coating 620.Metallic film 640 is formed between preceding substrate 610 and the fluorescence coating 620.In addition, metallic film 640 is more effectively assembled from reflector 560 electrons emitted, and substrate 610 reverberation forward, therefore improves reflection efficiency.
In addition, anode substrate 600 also comprises optional dark space 630, the non-light-emitting area before it forms in the active zone of substrate 610.Dark space 630 is formed between the fluorescence coating 620 that forms pixel, and absorptions/obstruct exterior light crosstalks preventing, so improves contrast.
Therefore, the invention provides the electron emission display device that adopts electron emission device, thereby guaranteed the durability and the uniform luminance of electron emission display device with good characteristic.
In the above-described embodiments, electron emission device is applied to the cathode substrate of electron emission display device.Yet the present invention is not limited to this.As selection, can be applied to various backlight, the electron-beam cell and the electron emission display devices that are used for photoetching according to the electron emission device of the embodiment of the invention.
As mentioned above, the invention provides electron emission device and manufacture method thereof, wherein a plurality of holes are formed in the finite region, and adopt some holes to form the ohm layer that is connected to holding wire, have therefore guaranteed the durability and the uniformity of electron emission device.
In addition, the invention provides the electron emission display device that can reduce power consumption owing to the dielectricity of insulating barrier.
Described the present invention though engaged some one exemplary embodiment, it should be appreciated by those skilled in the art, the invention is not restricted to the disclosed embodiments, but opposite, the present invention is intended to cover spirit and the interior various improvement of category that are included in claim.
The application is in the preference of the exercise question that requires to submit in Korea S Department of Intellectual Property on February 18th, 2005 for the application No.10-2005-0013463 of " electron emission device, its manufacture method, comprise the electron emission display device of this electron emission device ", with reference to its content and quote herein.
Claims (11)
1. electron emission device comprises:
Substrate;
First electrode is arranged on the described substrate;
First insulating barrier is arranged on described first electrode and has a plurality of first holes;
Ohm layer is arranged at least one of described a plurality of first holes, and is electrically connected to described first electrode;
Second insulating barrier, form by thin film growth process, described second insulating barrier is positioned on described first insulating barrier and the ohm layer and covers the inner surface in described a plurality of first holes except described at least one hole that wherein is provided with described ohm layer, thereby forms second hole in described first hole;
Holding wire is electrically connected to described ohm layer and is used for via described ohm layer to described first electrode supply voltage;
Reflector is arranged in described second hole, and is electrically connected to described first electrode; With
Second electrode is arranged on described second insulating barrier, and has a plurality of grid hole, and described grid hole is corresponding to described second hole.
2. electron emission device according to claim 1, wherein said first insulating barrier have the thickness of 5 μ m to 9 mu m ranges, and wherein said second insulating barrier has the thickness of 1 μ m to 3 mu m ranges.
3. electron emission device according to claim 1 also comprises grid electrode, and it is arranged on described second electrode and has a plurality of control holes corresponding to described a plurality of second holes.
4. electron emission device according to claim 3, wherein said grid electrode comprise the netted conducting strip that is coated with the 3rd insulating barrier.
5. method of making electron emission device, described method comprises:
On substrate, form first electrode;
Form holding wire, it is electrically connected to first electrode on described substrate, and is used for providing voltage to described first electrode;
On described first electrode, form first insulating barrier by printing and annealing insulating material;
In described first insulating barrier, form a plurality of first holes;
In at least one of described a plurality of first holes, form ohm layer, to be electrically connected to described first electrode and holding wire;
Form second insulating barrier by thin film growth process, described second insulating barrier is positioned on described first insulating barrier and the ohm layer and covers the inner surface in described a plurality of first holes except described at least one hole that wherein is provided with described ohm layer, thereby forms second hole in described first hole;
Form second electrode on described second insulating barrier, it has reservation shape in the direction with first electrode crossing; With
In described second hole, form reflector, to be electrically connected to described first electrode.
6. electron emission display device comprises:
First and second substrates face with each other;
First electrode is arranged on described first substrate;
First insulating barrier is arranged on described first electrode and has a plurality of first holes;
Ohm layer is arranged at least one of described a plurality of first holes, and is electrically connected to described first electrode;
Second insulating barrier, form by thin film growth process, described second insulating barrier is positioned on described first insulating barrier and the ohm layer and covers the inner surface in described a plurality of first holes except described at least one hole that wherein is provided with described ohm layer, thereby forms second hole in described first hole;
Holding wire is electrically connected to described ohm layer and is used for via described ohm layer to first electrode supply voltage;
Reflector is arranged in described second hole, and is electrically connected to described first electrode;
Second electrode is arranged on described second insulating barrier, and has a plurality of grid hole, and described grid hole is corresponding to described second hole;
Fluorescence coating is arranged on described second substrate and is used to respond from the collision of described reflector institute electrons emitted and luminous; With
Anode electrode is arranged on described second substrate and is connected to described fluorescence coating.
7. electron emission display device according to claim 6, wherein said first insulating barrier have the thickness of 5 μ m to 9 mu m ranges, and wherein said second insulating barrier has the thickness of 1 μ m to 3 mu m ranges.
8. electron emission display device according to claim 6 also comprises grid electrode, and it is arranged on described second electrode and has a plurality of control holes corresponding to described a plurality of second holes.
9. electron emission display device according to claim 8, wherein said grid electrode comprise the netted conducting strip that is coated with the 3rd insulating barrier.
10. electron emission display device according to claim 6, wherein said reflector comprise carbon nano-tube, graphite, gnf, diamond-like-carbon, C60, silicon nanowires and combination thereof one of at least.
11. electron emission display device according to claim 6, also comprise be provided with described second substrate and the response from reflector that launch with the non-luminous dark space of electronics its collision.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050013463A KR20060092512A (en) | 2005-02-18 | 2005-02-18 | Electron emission device and manufacturing method and electron emission display using same |
| KR13463/05 | 2005-02-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1828809A CN1828809A (en) | 2006-09-06 |
| CN1828809B true CN1828809B (en) | 2010-04-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100070103A Expired - Fee Related CN1828809B (en) | 2005-02-18 | 2006-02-14 | Electron emission device and its method of fabrication and electron emission display containing same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20060244365A1 (en) |
| EP (1) | EP1696450B1 (en) |
| KR (1) | KR20060092512A (en) |
| CN (1) | CN1828809B (en) |
| DE (1) | DE602006000161T2 (en) |
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| US6843697B2 (en) * | 1999-06-25 | 2005-01-18 | Micron Display Technology, Inc. | Black matrix for flat panel field emission displays |
| KR100661142B1 (en) * | 2001-02-01 | 2006-12-26 | 샤프 가부시키가이샤 | Electron emission device and field emission display |
| US7201627B2 (en) * | 2003-07-31 | 2007-04-10 | Semiconductor Energy Laboratory, Co., Ltd. | Method for manufacturing ultrafine carbon fiber and field emission element |
-
2005
- 2005-02-18 KR KR1020050013463A patent/KR20060092512A/en active IP Right Grant
-
2006
- 2006-01-12 US US11/330,232 patent/US20060244365A1/en not_active Abandoned
- 2006-02-14 CN CN2006100070103A patent/CN1828809B/en not_active Expired - Fee Related
- 2006-02-16 DE DE602006000161T patent/DE602006000161T2/en active Active
- 2006-02-16 EP EP06110015A patent/EP1696450B1/en not_active Not-in-force
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6176752B1 (en) * | 1998-09-10 | 2001-01-23 | Micron Technology, Inc. | Baseplate and a method for manufacturing a baseplate for a field emission display |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1696450B1 (en) | 2007-10-17 |
| EP1696450A3 (en) | 2006-09-20 |
| EP1696450A2 (en) | 2006-08-30 |
| US20060244365A1 (en) | 2006-11-02 |
| DE602006000161T2 (en) | 2008-08-07 |
| KR20060092512A (en) | 2006-08-23 |
| DE602006000161D1 (en) | 2007-11-29 |
| CN1828809A (en) | 2006-09-06 |
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