CN1828418A - 193nm photoresist containing silicon coupling agent and its filming resin - Google Patents

193nm photoresist containing silicon coupling agent and its filming resin Download PDF

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Publication number
CN1828418A
CN1828418A CN 200610039385 CN200610039385A CN1828418A CN 1828418 A CN1828418 A CN 1828418A CN 200610039385 CN200610039385 CN 200610039385 CN 200610039385 A CN200610039385 A CN 200610039385A CN 1828418 A CN1828418 A CN 1828418A
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ester
grams
acid
alkyl
norborene
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冉瑞成
沈吉
孙小侠
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Suzhou Huafei Microelectronic Material Co., Ltd.
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SUZHOU HUAFEI MICROELECTRONICS MATERIAL CO Ltd
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Abstract

Wherein, it selects the copolymer with silicon-contained acrylic ester and acrylic ester or naphthenic hydrocarbon. This invention improves photoresist adherence and anti-drying etching performance, increases the resolvability by Si-OR group, and enhances the contrast of exposure area and non-exposure area to obtain more clear photo-etching figure.

Description

The 193nm photoresist and the film-forming resin thereof that contain silicone couplet
Technical field
The present invention relates to a kind of multipolymer film-forming resin that contains silicone couplet (also claiming " film forming agent ") and utilize this film-forming resin formulated to be used for ArF laser (193nm) be deep ultraviolet (DUV) the positivity chemical amplification type photoetching compositions of exposure light source.
Background technology
Photoresist is the key function material that carries out photoetching process in the large scale integrated circuit industry.Wherein film-forming resin is again the important component part of photoresist, and its chemistry and physical property directly influence the result of use of photoresist in large scale integrated circuit industry.Photoresist is divided into positive photoresist and negative photoresist two big classes according to the difference of technology.So-called positive photoresist is meant that in photoetching process on the photoresist film, the part of graph exposure is developed the liquid flush away at last, stays unexposed part and forms figure.
Along with the continuous development of integrated circuit to the high integration direction, the live width of photoetching is more and more narrow, requires the resolution of photoresist more and more higher.And be that the photoresist resolution that the photoetching process development of exposure light source (193nm) comes can reach 0.13-0.10 μ m with ArF laser, if use the exposure technology of exposure camera lens with high NA value, its resolution even can reach the technology node of 0.10-0.065 μ m.Its film-forming resin is different fully with the DUV photoresist film-forming resin that is used for the exposure of 248nm wave band based on poly(4-hydroxystyrene) (PHS), because based on poly(4-hydroxystyrene) (PHS) be used for the 248nm photoresist and film-forming resin has strong absorption at 193nm wave band place to light wave, can't normal exposure.Therefore must select for use not have and absorb or absorb the film-forming resin of faint material as the 193nm photoresist at 193nm wave band place.
On the other hand, the large scale integrated circuit manufacturing technology that develops rapidly requires photoetching process critical material photoresist also constantly to adapt to it.Be exactly to require photoresist to have higher resolution specifically, better technological operation performance, specialization more.Therefore, the manufacturing technology of photoresist is also improved and innovation along with developing rapidly continuous of IC industry, and new product emerges in constantly trial-production, renewal.
Summary of the invention
The invention provides a kind of contain the multipolymer film-forming resin of silicone couplet and utilize this film-forming resin formulated to be used for ArF laser (193nm) be deep ultraviolet (DUV) the positivity chemical amplification type photoresist of exposure light source, its objective is by be lowered into film resin at 193nm wave band place to the absorbability of light wave and the copolymerization that improves each monomer, effectively improve the adhesiveness of photoresist and base material silicon chip, reduce the thickness loss of unexposed area, increase the dissolubility of exposure region in alkaline-based developer, thereby increase the contrast of exposure region and non-exposed area, to obtain better litho pattern.
For achieving the above object, the technical scheme that the present invention contains the multipolymer film-forming resin employing of silicone couplet is: a kind of multipolymer film-forming resin that contains silicone couplet, by comonomer under the condition that radical initiator exists, by carrying out copolymerization and corresponding aftertreatment is prepared from solvent, comonomer comprises:
(1), contains acid-sensitive group monomer 5%-60% weight;
Describedly contain acid-sensitive group monomer and in following two class material scopes, select a kind of monomer or two kinds of monomers:
1., esters of acrylic acid
Chemical general formula:
Figure A20061003938500091
In the formula: R 1=H or CH 3
R 2Select one of following substituted radical:
A)、
Figure A20061003938500092
For example:
Tert-butyl acrylate;
The metering system tert-butyl acrylate;
The acrylic acid tert-pentyl ester;
The methacrylic acid tert-pentyl ester;
Acrylic acid 1-methyl ring pentyl ester;
Methacrylic acid 1-methyl ring pentyl ester;
Acrylic acid 1-methyl cyclohexane ester;
Methacrylic acid 1-methyl cyclohexane ester;
Acrylic acid 1-ethyl ring pentyl ester;
Methacrylic acid 1-ethyl ring pentyl ester;
Acrylic acid 1-ethyl cyclohexyl;
Methacrylic acid 1-ethyl cyclohexyl;
Acrylic acid 2-methyl 2-diamantane alcohol ester;
Methacrylic acid 2-methyl 2-diamantane alcohol ester;
Acrylic acid 2-ethyl 2-diamantane alcohol ester;
Methacrylic acid 2-ethyl 2-diamantane alcohol ester;
Acrylic acid 2-(2-butyrolactone base) ester;
Methacrylic acid 2-(2-butyrolactone base) ester;
Acrylic acid 3-(2-butyrolactone base) ester;
Methacrylic acid 3-(2-butyrolactone base) ester;
Acrylic acid 2-(5-caprolactone base) ester;
Methacrylic acid 2-(5-caprolactone base) ester;
Acrylic acid 3-(5-caprolactone base) ester;
Methacrylic acid 3-(5-caprolactone base) ester;
B)、
Figure A20061003938500101
Contain the acrylate of cholic acid ester group or contain the methacrylate of cholic acid ester group, for example:
The methacrylic acid cholic acid tert-butyl ester;
The acrylic acid cholic acid tert-butyl ester;
The methacrylic acid deoxycholic acid tert-butyl ester;
The acrylic acid deoxycholic acid tert-butyl ester;
The methacrylic acid lithocholic acid tert-butyl ester;
The acrylic acid lithocholic acid tert-butyl ester;
C)、
Figure A20061003938500102
Wherein: Rz=CH 3Or C 2H 5Rx=H or OH; Ry=H or OH;
R 4, R 5, R 6And R 7One of optional following substituted radical:
Figure A20061003938500111
For example:
Acrylic acid-5-(2-carboxylic acid tert-butyl ester base) norborneol ester;
Methacrylic acid 5-(2-carboxylic acid tert-butyl ester base) norborneol ester;
Acrylic acid 5-(2-carboxylic acid methyl hexamethylene ester group) norborneol ester;
Methacrylic acid 5-(2-carboxylic acid methyl hexamethylene ester group) norborneol ester;
Acrylic acid 5-(2-carboxylic acid 1-methyl cyclohexane ester group) norborneol ester;
Methacrylic acid 5-(2-carboxylic acid 1-methyl cyclohexane ester group) norborneol ester;
Acrylic acid 5-(2-carboxylic acid 1-ethyl ring pentyl ester base) norborneol ester;
Methacrylic acid 5-(2-formyl chloride-1-ethyl ring pentyl ester base) norborneol ester;
Acrylic acid 5-(2-carboxylic acid 1-ethyl hexamethylene ester group) norborneol ester;
Methacrylic acid 5-(2-carboxylic acid 1-ethyl hexamethylene ester group) norborneol ester;
Acrylic acid 5-(2-carboxylic acid 2-methyl 2-adamantanol ester group) norborneol ester;
Methacrylic acid 5-(2-carboxylic acid 2-methyl 2-adamantanol ester group) norborneol ester;
Acrylic acid 5-(2-carboxylic acid 2-ethyl 2-adamantanol ester group) norborneol ester;
Methacrylic acid 5-(2-carboxylic acid 2-ethyl 2-adamantanol ester group) norborneol ester;
Acrylic acid 5-(2-carboxylic acid 2-butyrolactone base ester group) norborneol ester;
Methacrylic acid 5-(2-carboxylic acid 2-butyrolactone base) norborneol ester;
Acrylic acid 5-(2-carboxylic acid 2-caprolactone base) norborneol ester;
Methacrylic acid 5-(2-carboxylic acid 2-caprolactone base) norborneol ester;
2., the derivant class of norborene
Selection meets the material of following chemical general formula or chemical formula:
Figure A20061003938500112
Wherein: R 8, R 9, R 10, R 11And R 12One of optional following substituted radical:
Figure A20061003938500121
For example:
5-norborene-2-carboxylic acid tert-butyl ester;
5-norborene-2-carboxylic acid tert-butyl ester;
5-norborene-2-carboxylic acid 1-methyl ring pentyl ester;
5-norborene-2-carboxylic acid 1-methyl cyclohexane ester;
5-norborene-2-carboxylic acid 1-ethyl ring pentyl ester;
5-norborene-2-carboxylic acid 1-ethyl cyclohexyl;
5-norborene-2-carboxylic acid 2-methyl adamantane alcohol ester;
5-norborene-2-carboxylic acid 2-ethyl diamantane alcohol ester;
5-norborene-2-carboxylic acid 2-butyrolactone base ester;
5-norborene-2-carboxylic acid-3-butyrolactone base ester;
5-norborene-2-carboxylic acid-2-caprolactone base ester;
5-norborene-2-carboxylic acid-3-caprolactone base ester;
5-norborene-2-hydroxyl tert-butyl group carbonic ester;
(2), acrylate containing silicone class coupling agent 0.5%-20% weight;
Described acrylate containing silicone class coupling agent is selected a kind of monomer or two kinds of monomers in meeting following chemical general formula material scope:
1., chemical general formula:
Figure A20061003938500122
In the formula: n=1-8; R 13=H, CH 3Or CF 3R 14=C 1-C 20Alkyl; R 15=C 1-C 20Alkyl; R 16=OH, C 1-C 20Alkyl or C 1-C 20Alkoxy;
For example:
Methacrylic acid propyl trialkoxy silane ester (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid propyl trialkoxy silane ester (wherein alkoxy contains 1-20 carbon atom);
Methacrylic acid propyl group dialkoxy silicane ester (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid propyl group dialkoxy silicane ester (wherein alkoxy contains 1-20 carbon atom);
Methacrylic acid ethyl trialkoxy silane ester (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid ethyl trialkoxy silane ester (wherein alkoxy contains 1-20 carbon atom);
Methacrylic acid ethyl dialkoxy silicane ester (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid ethyl dialkoxy silicane ester (wherein alkoxy contains 1-20 carbon atom);
Methacrylic acid methyl trialkoxy silane ester (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid methyl trialkoxysilane ester (wherein alkoxy contains 1-20 carbon atom);
Methacrylic acid methyl dialkoxy silicane ester (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid methyl dialkoxy silicane ester (wherein alkoxy contains 1-20 carbon atom);
2., chemical general formula:
In the formula: m=1-8; R 17=H, CH 3Or CF 3R 18=C 1-C 20Alkyl; R 18 '=C 1-C 20Alkyl; R 19=C 1-C 20Alkyl; R 19 '=C 1-C 20Alkyl; R 20=OH, C 1-C 20Alkyl or C 1-C 20Alkoxy; R 20 '=OH, C 1-C 20Alkyl or C 1-C 20Alkoxy;
For example:
Methacrylic acid methylene two (propyl trialkoxy silane ester) (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid methylene two (propyl trialkoxy silane ester) (wherein alkoxy contains 1-20 carbon atom);
Methacrylic acid methylene two (propyl group dialkoxy silicane ester) (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid methylene two (propyl group dialkoxy silicane ester) (wherein alkoxy contains 1-20 carbon atom);
Methacrylic acid methylene two (ethyl trialkoxy silane ester) (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid methylene two (ethyl trialkoxy silane ester) (wherein alkoxy contains 1-20 carbon atom);
Methacrylic acid methylene two (ethyl dialkoxy silicane ester) (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid methylene two (ethyl dialkoxy silicane ester) (wherein alkoxy contains 1-20 carbon atom);
Methacrylic acid methylene two (methyl trialkoxysilane ester) (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid methylene two (methyl trialkoxysilane ester) (wherein alkoxy contains 1-20 carbon atom);
Methacrylic acid methylene two (methyl dialkoxy silicane ester) (wherein alkoxy contains 1-20 carbon atom);
Acrylic acid methylene two (methyl dialkoxy silicane ester) (wherein alkoxy contains 1-20 carbon atom);
(3), contain alkali soluble group monomer 30%-80% weight;
The described alkali soluble group monomer that contains is selected a kind of monomer or two kinds of monomers in following material scope:
1., the derivant of norborene
Selection meets the material of following chemical general formula:
In the formula: R 21, R 22, R 23, R 24And R 25One of optional following substituted radical:
Figure A20061003938500142
For example:
2-hydroxyl-5-norborene;
5-norborene-5-formic acid;
5-norborene-5-formic acid ethoxy hydroxyethyl ester;
5-norborene-5-formic acid ethoxy hydroxyethyl ester;
5-norborene-5-formic acid dihydroxy propyl ester;
2., maleic anhydride and analog thereof
Selection meets the material of following chemical formula:
Figure A20061003938500143
3., the fluoride of norborene
Selection meets the material of following chemical formula:
4., the methacrylate of the acrylate of cholic acid or cholic acid
The material that meets following chemical formula:
Figure A20061003938500151
Title Rv Rw
Cholic acid (CA) deoxycholic acid (DCA) deoxycholic acid (CDCA) deoxycholic acid (UDCA) lithocholic acid (LCA) OH OH H H H OH H OH(α) OH(β) H
For example:
Methacrylic acid 1-cholate;
Acrylic acid 1-cholate;
Methacrylic acid 1-deoxycholate;
Acrylic acid 1-deoxycholate;
Methacrylic acid 1-lithocholate;
Acrylic acid 1-lithocholate;
The molecular weight of above-mentioned multipolymer is 3000-500000, and molecular weight distribution is 1.4-2.8.
Related content in the technique scheme is explained as follows:
1, in the such scheme, described comonomer also comprises acrylic ester monomer 0.1~40%,
Its chemical general formula:
Figure A20061003938500152
In the formula:
R 26=H, CH 3, C 2H 5Or CF 3
R 27=H, C 1-C 20Alkyl or C 1-C 20Alkoxy.
For example:
Jia Jibingxisuanyizhi;
Methyl methacrylate;
Isobutyl methacrylate;
Butyl methacrylate;
Methacrylic acid ethoxyethyl group ester;
Methacrylic acid ring pentyl ester;
Acrylic acid ring pentyl ester;
Cyclohexyl methacrylate;
Cyclohexyl acrylate;
Isobornyl methacrylate;
Isobornyl acrylate;
Methacrylic acid diamantane alcohol ester;
Acrylic acid diamantane alcohol ester;
2, in the such scheme, described comonomer also comprises one of following material:
2-cyano group 5-norborene;
2-trimethyl silane 5-norborene;
2-trimethoxy silane 5-norborene;
Content is 0.1~20% weight.
3, about polyreaction
(1), above-mentioned copolymerization can carry out separately or in their potpourri at all kinds of solvents, these solvents are selected from methyl alcohol, ethanol, dioxane, acetone, butanone, pentanone, methyl isobutyl ketone, cyclohexanone, tetrahydrofuran, toluene, benzene, dimethylbenzene, methylene chloride, chloroform, methenyl choloride, ethylene dichloride, trichloroethanes etc.
(2), these copolymerizations can carry out in the presence of various radical initiators, comprise various azo initiators, two different heptan of, azo fine as azo two isobutyls are fine etc., and the radical initiator of various superoxide, as tert-butyl hydroperoxide pivalate, tert-butyl hydroperoxide, benzoic acid hydrogen peroxide, benzoyl peroxides etc., initiator amount are the 0.3%-15% of total monomer weight.
(3), the adding of radical initiator can be adopted dual mode: first kind is after each comonomer is dissolved in solvent, is heated to polymerization temperature earlier, adds initiating agent then and carries out polyreaction.Second kind is after each comonomer is dissolved in solvent, adds earlier initiating agent, and then is warmed to polymerization temperature and carries out polyreaction.Described initiating agent can disposablely add in this dual mode, also can gradation add.The temperature of polyreaction is controlled at 40~150 ° of scopes according to the solvent that uses is different with initiating agent.Polymerization reaction time is also according to be controlled at 4~28 hour different with initiating agent of solvent of using.
4, the aftertreatment of polyreaction:
(1), purification process
After polyreaction was finished, unreacted residual monomer and part organic impurities thereof can be removed after extracting with heptane, hexane, cyclohexane, pentane, sherwood oil, ether equal solvent.
(2), separating solids multipolymer
Multipolymer can be in organic or inorganic solvents such as the potpourri of potpourri, isopropyl alcohol and the water thereof of potpourri, ethanol and the water thereof of pure water, methyl alcohol, first alcohol and water, heptane, hexane, cyclohexane, pentane, sherwood oil, ether precipitate and separate, the yield of vacuum drying rear copolymer is 30%-90%.
(3), the reaction of polymkeric substance
Some multipolymer also can be obtained through suitable chemical reaction by the specific polymkeric substance of forming except can directly being formed by their corresponding monomer copolymerization.As some (methyl) acrylate polymer, its ester group can be obtained by the direct polymerization of monomer whose, also can be obtained through esterification or ester exchange reaction by poly-(methyl) acrylic acid or poly-(methyl) acrylate polymer.
And for example, poly--5-tert-butyl group carbonic ester-2-norbornene polymer, outside can obtaining by the direct polymerization of monomer whose (5-tert-butyl group carbonic ester 2-norborene), also can and obtain by poly--5-hydroxyl-2-norbornene polymer and di-tert-butyl dicarbonate (DBDC) reaction.Reality is used the sort of method, should decide according to technological requirement and pricing.
For achieving the above object, the technical scheme that photoresist of the present invention adopts is: a kind of deep ultraviolet positivity chemical amplification type photoresist, mainly mixed by following component and content thereof and form:
3~25 parts of weight of film-forming resin;
Photic sour 0.05~5 part of weight;
74~97 parts of weight of solvent;
0.01~0.5 part of weight of organic base;
Wherein:
Described film-forming resin adopts above-mentioned constructed scheme, is not repeated in this description here;
Described photic acid is selected from one of following material:
(1), sulfosalt
Sulfosalt is made up of sulphur positive ion and sulfonate radical negative ion, and these two kinds of ions can carry out combined preparation as required.Wherein:
The sulphur positive ion is selected one of following chemical general formula or chemical formula:
In the formula:
R 28=H, C 1-C 20Alkyl or C 1-C 20Alkoxy;
R 29=H, C 1-C 20Alkyl or C 1-C 20Alkoxy;
R 30=H, C 1-C 20Alkyl or C 1-C 20Alkoxy;
R 31=H, C 1-C 20Alkyl or C 1-C 20Alkoxy;
R 32=H, C 1-C 20Alkyl or C 1-C 20Alkoxy;
The sulfonate radical negative ion is selected one of following chemical formula:
Figure A20061003938500181
-SO 3(CF 2) mCF 3m=0-12
For example: triphenyl sulfosalt, three p-methylphenyl sulfosalts, the three pairs of tert-butyl-phenyl sulfosalts, three (3,5 3,5-dimethylphenyl) sulfosalt, three (3,5 di-tert-butyl-phenyl) sulfosalt.Coordination anion one of is selected or both are above mixes: trifluoromethane sulfonic acid, perfluoro butyl sulfonic acid, phenyl-pentafluoride sulfonic acid, camphorsulfonic acid, to dodecylbenzene sulfonic acid, naphthalene sulfonic acids etc.
(2), diaryl group iodized salt
Diaryl group iodized salt is made up of iodine positive ion and sulfonate radical negative ion, and these two kinds of ions can carry out combined preparation as required.Wherein:
The chemical general formula of iodine positive ion:
Figure A20061003938500182
In the formula:
R 33=H, C 1-C 20Alkyl, C 1-C 20Alkoxy or C 1-C 20Aryl;
R 34=H, C 1-C 20Alkyl, C 1-C 20Alkoxy or C 1-C 20Aryl;
The sulfonate radical negative ion is selected one of following chemical formula:
-SO 3(CF 2) mCF 3m=0-12
For example: diphenyl iodnium, di-p-tolyl salt compounded of iodine, two pairs of tert-butyl-phenyl salt compounded of iodine etc.One of coordination anion selection or both above mixing: trifluoromethane sulfonic acid, perfluoro butyl sulfonic acid, p-methylphenyl sulfonic acid, naphthalene sulfonic acids etc.
(3), acid imide sulphonic acid ester
Select one of following chemical formula:
Figure A20061003938500184
For example: phenyl acid imide benzene sulfonate, phenyl acid imide tosylate, phenyl acid imide napsylate, naphthalimide benzene sulfonate, naphthalimide trifluoromethane sulfonic acid ester etc.
Described solvent is selected from one of following material:
1-Methoxy-2-propyl acetate, ethyl lactate, methyl isobutyl ketone;
Described organic base is selected from one of following material:
Tripropyl amine (TPA), tri-n-butylamine, triisobutylamine, trioctylamine, triethanolamine, triethoxy monoethanolamine, trimethoxy methoxy ethyl amine, Tetramethylammonium hydroxide.
Other adjuvants can also have a small amount of component such as 0.01~0.3 part of weight of levelling agent, resistance solvent, dyestuff.
Design of the present invention and characteristics: the invention provides the multipolymer film-forming resin of a class acrylate containing silicone class coupling agent and esters of acrylic acid and cycloalkanes alkene, it is faint that itself is used in the absorption of 193nm wave band place, and coupling agent is easy to and other monomer copolymerizable.Be applied to the positivity chemical amplification type photoresist of deep ultraviolet (193nm) wave band exposure, because the effect of acrylate containing silicone class coupling agent unit, can effectively improve the adhesiveness of film forming agent and photoresist and base material silicon chip, reduce the thickness loss of unexposed area, increase the dissolubility of exposure region in alkaline-based developer, so just increase the contrast of exposure region and non-exposed area, therefore can obtain better litho pattern.Simultaneously, also improved the anti-dry etching performance of photoresist glued membrane.Furtherly, because the siliceous existence of esters of acrylic acid coupling agent unit in film-forming resin, photoresist glued membrane on its silicon chip is in photoetching process, at exposure region, the Si-OH group that the Si-OR group that exists in the acrylate containing silicone coupling agent forms under the acid effect that photic acid produces will further increase the dissolubility of glued membrane in developer solution.So just increase exposure region and non-exposed area contrast, and formed litho pattern more clearly.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment one:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
Figure A20061003938500191
5-norborene-2-t-butyl formate 24.0 grams;
Maleic anhydride (the new steaming) 7.5 grams;
5-norborene-2-formic acid hydroxyl ethyl ester 22.4 grams;
Methacrylic acid-1-methyl ring pentyl ester 25.8 grams;
Methacrylic acid propyl group dimethoxy butyl silicon ester 7.0 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add 5-norborene-2-t-butyl formate 24.0 grams, maleic anhydride (the new steaming) 7.5 grams, 5-norborene-2-formic acid hydroxyl ethyl ester 22.4 grams, methacrylic acid-1-methyl ring pentyl ester 25.8 grams, methacrylic acid propyl group dimethoxy butyl silicon ester 7.0 grams, tetrahydrofuran 400 grams, under agitation logical nitrogen 10 minutes, be heated to 60~70 ℃ then, add azo two isobutyls fine (AIBN) 4.5 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans again, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 46% after the vacuum drying.
Embodiment two:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
Figure A20061003938500201
5-norborene-2-t-butyl formate 38.2 grams;
Maleic anhydride (the new steaming) 9.8 grams;
Methacrylic acid-1-methyl cyclohexane ester 32.6 grams;
Methacrylic acid methylene two (ethyl dimethoxy silicol) ester 7.6 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add 5-norborene-2-t-butyl formate 38.2 grams, maleic anhydride (the new steaming) 9.8 grams, methacrylic acid-1-methyl cyclohexane ester 32.6 grams, methacrylic acid methylene two (ethyl dimethoxy silicol) ester 7.6 grams, tetrahydrofuran 400 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 4.5 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 51% after the vacuum drying.
Embodiment three:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
Figure A20061003938500211
5-norborene-2-t-butyl formate 28.7 grams;
5-norborene-2,3-acid anhydrides (Nadic Anhydride) 20.3 grams;
Metering system tert-butyl acrylate 28.4 grams;
Methacrylic acid propyl group three butoxy silane esters 8.7 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add 5-norborene-2-t-butyl formate 28.7 grams, 5-norborene-2,3-acid anhydrides (Nadic Anhydride) (the new steaming) 20.3 grams, metering system tert-butyl acrylate 28.4 grams, methacrylic acid propyl group three butoxy silane esters 8.7 grams, tetrahydrofuran 400 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 4.5 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 54% after the vacuum drying.
Embodiment four:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
2-(2-trifluoromethyl-2-hydroxyl trifluoro propyl)-5-norborene 27.3 grams;
Maleic anhydride (the new steaming) 12.3 grams;
Methacrylic acid-2-butyrolactone base ester 42.5 grams;
Methacrylic acid methyl trimethoxy silane ester 6.0 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add 2-(2-trifluoromethyl 2-hydroxyl trifluoro propyl)-5-norborene 27.3 grams, maleic anhydride (the new steaming) 12.3 grams, methacrylic acid-2-butyrolactone base ester 42.5 grams, methacrylic acid methyl trimethoxy silane ester 6.0 grams, tetrahydrofuran 400 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 4.7 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 52% after the vacuum drying.
Embodiment five:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
5-norborene-2-formic acid-beta-hydroxy ethyl ester 27.0 grams;
5-norborene-2-trimethyl silane 17.1 grams;
Methacrylic acid-2-methyl-2-diamantane alcohol ester 52.5 grams;
Methacrylic acid propyl group dimethoxy silicol ester 6.0 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add 5-norborene-2-formic acid-beta-hydroxy ethyl ester 27.0 grams, 5-norborene-2-trimethyl silane 17.1 grams, methacrylic acid 2-methyl-2-diamantane alcohol ester 52.5 grams, methacrylic acid propyl group dimethoxy silicol ester 6.0 grams, tetrahydrofuran 450 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 5.5 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 8-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 45% after the vacuum drying.
Embodiment six:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
Figure A20061003938500231
5-norborene-2-formic acid 22.5 grams;
5-norborene-2,3-and butyrolactone 17.0 grams;
Methacrylic acid-2-ethyl-2-diamantane alcohol ester 51.5 grams;
Methacrylic acid ethyl-methyl dimethoxy silicon ester 7.0 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add 5-norborene-2-formic acid 22.5 grams, 5-norborene-2,3-and butyrolactone 17.0 grams, methacrylic acid-2-ethyl 2-diamantane alcohol ester 51.5 grams, methacrylic acid ethyl-methyl dimethoxy silicon ester 7.0 grams, tetrahydrofuran 400 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 6.5 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 52% after the vacuum drying.
Embodiment seven:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
Figure A20061003938500241
2-(2-trifluoromethyl 2-hydroxy ethoxy trifluoro propyl)-5-norborene 32.5 grams;
Methacrylic acid 5-(2-t-butyl formate norborny) ester 42.1 grams;
Methacrylic acid-2-butyrolactone base ester 36.5 grams;
Methacrylic acid propyl trimethoxy silicane ester (KH570) 9.5 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add 2-(2-trifluoromethyl 2-hydroxy ethoxy trifluoro propyl)-5-norborene 32.5 grams, methacrylic acid-5-(2-t-butyl formate norborny) ester 42.1 grams, methacrylic acid-2-butyrolactone base ester 36.5 grams, methacrylic acid propyl trimethoxy silicane ester (KH570) 9.5 grams, tetrahydrofuran 450 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 6.5 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 56% after the vacuum drying.
Embodiment eight:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
Figure A20061003938500251
Methacrylic acid-5-(2-t-butyl formate base) norborneol ester 39.2 grams;
Methacrylic acid (three ring [4,4,1,01,6] undecane-9-t-butyl formate bases) ester 36.1 grams;
Methacrylic acid-1-methyl ring pentyl ester 30.5 grams;
Methacrylic acid propyl group diethoxy ethylsilane ester 10.3 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add methacrylic acid (three rings [4,4,1,01,6] ester 36.1 grams undecane-9-t-butyl formate base), methacrylic acid-5-(2-t-butyl formate base) norborneol ester 39.2 grams, methacrylic acid 1-methyl ring pentyl ester 30.5 grams, methacrylic acid propyl group diethoxy ethylsilane ester 10.3 grams, tetrahydrofuran 450 grams, under agitation logical nitrogen 10 minutes adds azo two isobutyls fine (AIBN) 6.2 grams and is dissolved in 50 solution that restrain in the tetrahydrofurans, is heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 78% after the vacuum drying.
Embodiment nine:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
Methacrylic acid-5-(2-tert-butyl group carbonate group norborneol) ester 28.0 grams;
Methacrylic acid (norborneol-2-hydroxyl) ester 34.3 grams;
Methacrylic acid-2-butyrolactone base ester 34.5 grams;
Methacrylic acid propyl group dimethoxy-ethyl silicon ester 6.5 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add methacrylic acid-5-(2-tert-butyl group carbonate group norborneol) ester 28.0 grams, methacrylic acid (norborneol-2-hydroxyl) ester 34.3 grams, methacrylic acid-2-butyrolactone base ester 34.5 grams, methacrylic acid propyl group dimethoxy-ethyl silicon ester 6.5 grams, tetrahydrofuran 400 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 5.5 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 73% after the vacuum drying.
Embodiment ten:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
Methacrylic acid-5-(2-t-butyl formate base norborneol) ester 33.0 grams;
Methacrylic acid-2-valerolactone base ester 41.4 grams;
Methacrylic acid-3-cholate 47.6 grams;
Methacrylic acid propyl group dimethoxy-methyl silicon ester 9.0 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add methacrylic acid-5-(2-t-butyl formate base) norborneol ester 33.0 grams, methacrylic acid-2-valerolactone base ester 41.4 grams, methacrylic acid-3-cholate 47.6 grams, methacrylic acid propyl group dimethoxy-methyl silicon ester 9.0 grams, tetrahydrofuran 500 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 7.0 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 55% after the vacuum drying.
Embodiment 11:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
5-norborene-2-t-butyl formate 43.0 grams
Maleic anhydride (the new steaming) 12.2 grams;
Methacrylic acid-3-deoxycholic acid the tert-butyl ester 34.5 grams;
Glyceral methacrylate 7.4 grams;
Methacrylic acid ethyl dimethoxy silicol ester 7.0 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add 5-norborene-2-t-butyl formate 43.0 grams, maleic anhydride (the new steaming) 12.2 grams, glyceral methacrylate 7.4 grams, methacrylic acid-3-deoxycholic acid the tert-butyl ester 34.5 grams, methacrylic acid ethyl dimethoxy silicol ester 7.0 grams, tetrahydrofuran 400 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 5.0 grams and be dissolved in 20 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 45% after the vacuum drying.
Embodiment 12:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
5-norborene-2-formic acid (2 '-oxinane alcohol) ester 22.1 grams;
Dicyclopentadiene-2-formic acid 24.9 grams;
Methacrylic acid-2-methyl-2-diamantane alcohol ester 46.8 grams;
Methacrylic acid ethyl dimethoxy-methyl silicon ester 13.0 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add 5-norborene-2-formic acid (2 '-oxinane alcohol) ester 22.1 grams, dicyclopentadiene-2-formic acid 24.9 grams, methacrylic acid-2-methyl-2-diamantane alcohol ester 46.8 grams, methacrylic acid ethyl dimethoxy-methyl silicon ester 13.0 grams, tetrahydrofuran 450 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 6.0 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 50% after the vacuum drying.
Embodiment 13:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
5-norborene-2-t-butyl formate 19.6 grams;
Three rings [4,4,1,0 1,6] hendecene--9-formic acid 28.8 grams;
Methacrylic acid neopentyl alcohol ester 31.0 grams;
Methacrylic acid ethyl dimethoxy-methyl silicon ester 11.0 grams.
The preparation method is: in a 1000ml there-necked flask that is equipped with electric mixer, condenser, thermometer, temperature controller, heating jacket and nitrogen inlet, add 5-norborene-2-t-butyl formate 19.6 grams, methacrylic acid neopentyl alcohol ester 31.0 grams, three rings [4,4,1,0 1,6] hendecene--9-formic acid 28.8 grams, methacrylic acid ethyl dimethoxy-methyl silicon ester 11.0 grams, tetrahydrofuran 400 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 7.0 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 55% after the vacuum drying.
Embodiment 14:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction by heating and is prepared from.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
Figure A20061003938500291
5-norborene-2-formic acid tetrahydrofuran alcohol ester 21.1 grams;
2-hydroxyl-5-norborene 16.4 grams;
Metering system tert-butyl acrylate 32.2 grams;
Methacrylic acid propyl trimethoxy silicane ester 7.0 grams.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add 5-norborene-2-formic acid tetrahydrofuran alcohol ester 21.1 grams, 2-hydroxyl-5-norborene 16.4 grams, metering system tert-butyl acrylate 32.2 grams, methacrylic acid propyl trimethoxy silicane ester 7.0 grams, tetrahydrofuran 400 grams, under agitation logical nitrogen 10 minutes, add the solution of azo two isobutyls fine (AIBN) 4.0 grams in 20 gram tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 6-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.Polymer solids is dissolved in the 200 gram tetrahydrofurans, in heptane, precipitates again, filter then.Repeat to precipitate twice.Get polymer solids, yield 47% after the vacuum drying.
Embodiment 15:
A kind of multipolymer film-forming resin that contains silicone couplet by following comonomer and content thereof, under the condition that radical initiator exists, carries out copolyreaction and polymer reaction is prepared from by heating.The chemical formula of multipolymer film-forming resin (not representing sequential structure) is as follows:
Figure A20061003938500301
Methacrylic acid-5-(2-hydroxyl norborneol) ester 62.5 grams;
Methacrylic acid-1-methyl ring pentyl ester 30.5 grams;
Methacrylic acid propyl trimethoxy silicane ester (KH570) 9.0 grams;
Di-tert-butyl dicarbonate (DBDC) 32.7 grams;
N, N dimethylamine yl pyridines (DMAP) 0.5 gram.
The preparation method is: be equipped with electric mixer at one, condenser, thermometer, temperature controller, in the 1000ml there-necked flask of heating jacket and nitrogen inlet, add methacrylic acid-5-(2-hydroxyl norborneol) ester 62.5 grams, methacrylic acid-1-methyl ring pentyl ester 30.5 grams, methacrylic acid propyl trimethoxy silicane ester (KH570) 9.0 grams, tetrahydrofuran 400 grams, under agitation logical nitrogen 10 minutes, add azo two isobutyls fine (AIBN) 5.5 grams and be dissolved in 50 solution that restrain in the tetrahydrofurans, be heated to 60~70 ℃ then, continue the reaction backflow after 8-24 hour, be cooled to room temperature then.Polymer solution precipitates in heptane.
Polymer solids is dissolved in the 400 gram tetrahydrofurans, adds N under stirring, N dimethylamine yl pyridines (DMAP) 0.5 gram is cooled to 0-2 ℃ with solution.Slowly drip the solution of 32.7 gram di-tert-butyl dicarbonates (DBDC) in 100 milliliters of THF then, reaction constantly generates bubble (carbon dioxide), and the control rate of addition prevents that a large amount of foams from producing.Temperature of reaction should be controlled at below 30 ℃.After DBDC solution adds, continue to stir reflection 6-8 hour.Polymer solution repeats to precipitate in heptane three times then, gets polymer solids, yield 53% after the vacuum drying.
Hydroxyl in this polymkeric substance of 13C NMR analytical proof in 45% norborene-5-hydroxyl is protected by tert-butyl group carbonate group.
Embodiment 16:
A kind of compound method of 193nm photoresist: in clean 500 new ml polypropylene plastic bottles, the multipolymer that adds preparation among the 15.5 gram embodiment one, 0.21 gram triphenyl nine fluorine butyl sulfosalts, 200 gram electronic grade propylene glycol monomethyl ether acetate (PGMEA) solvents, and 0.25 the gram triethanolamine, 0.21 the gram surfactant.This potpourri is fixed on the mechnical oscillator, at room temperature shakes 10-24 hour, and it is fully dissolved.Filtrator with 0.5 micron pore size filters twice, and the filtrator with 0.1 micron pore size filters twice then, and the filtrator with 0.02 micron pore size filters twice again.The photoresist solution for preparing is sealed up for safekeeping with the black aluminum-plastic composite membrane.
Lithography experiments method and result: the photoresist of above-mentioned preparation is 8 "-12 " on the silicon chip with 2000-6000 rev/min speed rotation film forming, 90 seconds of baking on 120 ℃ of hot plates are then with exposing on the 193nm step-by-step exposure machine.Exposure intensity 10-50mJ/cm 2Toasted for 60 seconds on 110 ℃ of hot plates the exposure back, developed for 60 seconds oven dry back electron microscopy lithographic results at last again in 2.38%TMAH developer solution (23 ℃).The result proves that this photoresist resolution can reach 0.13-0.10 μ m, and has good photoetching process operation allowed band.
The foregoing description only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.

Claims (6)

1, a kind of multipolymer film-forming resin that contains silicone couplet, under the condition that radical initiator exists, by carrying out copolymerization and corresponding aftertreatment is prepared from solvent, it is characterized in that: comonomer comprises by comonomer:
(1), contains acid-sensitive group monomer 5%-60% weight;
Describedly contain acid-sensitive group monomer and in following two class material scopes, select a kind of monomer or two kinds of monomers:
1., esters of acrylic acid
Chemical general formula:
In the formula:
R 1=H or CH 3
R 2Select one of following substituted radical:
Wherein:
Rz=CH 3Or C 2H 5
Rx=H or OH;
Ry=H or OH;
R 4, R 5, R 6And R 7One of optional following substituted radical:
Figure A2006100393850003C1
2., the derivant class of norborene
Selection meets the material of following chemical general formula or chemical formula:
Figure A2006100393850003C2
Wherein: R 8, R 9, R 10, R 11And R 12One of optional following substituted radical:
Figure A2006100393850003C3
(2), acrylate containing silicone class coupling agent 0.5%-20% weight;
Described acrylate containing silicone class coupling agent is selected a kind of monomer or two kinds of monomers in meeting following chemical general formula material scope:
1., chemical general formula:
Figure A2006100393850004C1
In the formula: n=1-8; R 13=H, CH 3Or CF 3R 14=C 1-C 20Alkyl; R 15=C 1-C 20Alkyl; R 16=OH, C 1-C 20Alkyl or C 1-C 20Alkoxy;
2., chemical general formula:
Figure A2006100393850004C2
In the formula: m=1-8; R 17=H, CH 3Or CF 3R 18=C 1-C 20Alkyl; R 18 '=C 1-C 20Alkyl; R 19=C 1-C 20Alkyl; R 19 '=C 1-C 20Alkyl; R 20=OH, C 1-C 20Alkyl or C 1-C 20Alkoxy; R 20 '=OH, C 1-C 20Alkyl or C 1-C 20Alkoxy;
(3), contain alkali soluble group monomer 30%-80% weight;
The described alkali soluble group monomer that contains is selected a kind of monomer or two kinds of monomers in following material scope:
1., the derivant of norborene
Selection meets the material of following chemical general formula:
In the formula: R 21, R 22, R 23, R 24And R 25One of optional following substituted radical:
Figure A2006100393850004C4
2., maleic anhydride and analog thereof
Selection meets the material of following chemical formula:
3., the fluoride of norborene
Selection meets the material of following chemical formula:
Figure A2006100393850005C1
4., the methacrylate of the acrylate of cholic acid or cholic acid
The material that meets following chemical formula:
Figure A2006100393850005C2
Title Rv Rw Cholic acid (CA) deoxycholic acid (DCA) deoxycholic acid (CDCA) deoxycholic acid (UDCA) lithocholic acid (LCA) OH OH H H H OH H OH(α) OH(β) H
The molecular weight of above-mentioned multipolymer is 3000-500000, and molecular weight distribution is 1.4-2.8.
2, film-forming resin according to claim 1 is characterized in that: described comonomer also comprises acrylic ester monomer 0.1~40% weight,
Its chemical general formula:
In the formula:
R 26=H, CH 3, C 2H 5Or CF 3
R 27=H, C 1-C 20Alkyl or C 1-C 20Alkoxy.
3, film-forming resin according to claim 1 is characterized in that: described comonomer also comprises one of following material:
2-cyano group 5-norborene;
2-trimethyl silane 5-norborene;
2-trimethoxy silane 5-norborene;
Content is 0.1~20% weight.
4, a kind of deep ultraviolet positivity chemical amplification type photoresist is characterized in that: mainly mixed by following component and content thereof and form:
3~25 parts of weight of film-forming resin;
Photic sour 0.05~5 part of weight:
74~97 parts of weight of solvent;
0.01~0.5 part of weight of organic base;
Wherein:
Described film-forming resin adopts the described multipolymer film-forming resin that contains silicone couplet of claim 1;
Described photic acid is selected from one of following material:
(1), sulfosalt
Sulfosalt is made up of sulphur positive ion and sulfonate radical negative ion, wherein:
The sulphur positive ion is selected one of following chemical general formula or chemical formula:
Figure A2006100393850006C1
In the formula:
R 28=H, C 1-C 20Alkyl or C 1-C 20Alkoxy;
R 29=H, C 1-C 20Alkyl or C 1-C 20Alkoxy;
R 30=H, C 1-C 20Alkyl or C 1-C 20Alkoxy;
R 31=H, C 1-C 20Alkyl or C 1-C 20Alkoxy;
R 32=H, C 1-C 20Alkyl or C 1-C 20Alkoxy;
The sulfonate radical negative ion is selected one of following chemical formula:
-SO 3(CF 2) mCF 3m=0-12
(2), diaryl group iodized salt
Diaryl group iodized salt is made up of iodine positive ion and sulfonate radical negative ion, wherein:
The chemical general formula of iodine positive ion:
In the formula:
R 33=H, C 1-C 20Alkyl, C 1-C 20Alkoxy or C 1-C 20Aryl;
R 34=H, C 1-C 20Alkyl, C 1-C 20Alkoxy or C 1-C 20Aryl;
The sulfonate radical negative ion is selected one of following chemical formula:
-SO 3(CF 2) mCF 3m=0-12
(3), acid imide sulphonic acid ester
Select one of following chemical formula:
Described solvent is selected from one of following material:
1-Methoxy-2-propyl acetate, ethyl lactate, methyl isobutyl ketone;
Described organic base is selected from one of following material:
Tripropyl amine (TPA), tri-n-butylamine, triisobutylamine, trioctylamine, triethanolamine, triethoxy monoethanolamine, trimethoxy methoxy ethyl amine, Tetramethylammonium hydroxide.
5, photoresist according to claim 4 is characterized in that: the comonomer in the described film-forming resin also comprises acrylic ester monomer 0.1~40%,
Its chemical general formula:
Figure A2006100393850007C3
In the formula:
R 26=H, CH 3, C 2H 5Or CF 3
R 27=H, C 1-C 20Alkyl or C 1-C 20Alkoxy.
6, film-forming resin according to claim 4 is characterized in that: the comonomer in the described film-forming resin also comprises one of following material:
2-cyano group 5-norborene;
2-trimethyl silane 5-norborene;
2-trimethoxy silane 5-norborene;
Content is 0.1~20% weight.
CN 200610039385 2006-03-27 2006-03-27 193nm photoresist containing silicon coupling agent and its filming resin Pending CN1828418A (en)

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CN113999340A (en) * 2021-10-19 2022-02-01 江苏集萃光敏电子材料研究所有限公司 Film-forming resin containing silicon or sulfur and photoresist composition
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CN114957532A (en) * 2022-05-26 2022-08-30 广东粤港澳大湾区黄埔材料研究院 Polymer resin for electron beam photoresist and preparation method thereof
CN116199817A (en) * 2023-04-25 2023-06-02 有研工程技术研究院有限公司 Boc-containing gold resinate and positive photo-etching organic gold slurry and preparation method thereof

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CN101974201B (en) * 2010-09-30 2012-10-31 昆山西迪光电材料有限公司 Ultraviolet thick-film photoresist and film-forming resin thereof
CN101974201A (en) * 2010-09-30 2011-02-16 昆山西迪光电材料有限公司 Ultraviolet thick-film photoresist and film-forming resin thereof
WO2014134889A1 (en) * 2013-03-07 2014-09-12 京东方科技集团股份有限公司 Polymerisable oligomer and photoresist composition containing same
KR102172939B1 (en) 2016-07-28 2020-11-03 스미토모 베이클리트 컴퍼니 리미티드 Nadic anhydride polymer and photosensitive composition derived therefrom
WO2018022952A1 (en) * 2016-07-28 2018-02-01 Promerus, Llc Nadic anhydride polymers and photosensitive compositions derived therefrom
CN109476948A (en) * 2016-07-28 2019-03-15 普罗米鲁斯有限责任公司 Nadic acid anhydride polymer and photosensitive composite as derived from it
KR20190037268A (en) * 2016-07-28 2019-04-05 프로메러스, 엘엘씨 Anhydrous nadic acid polymer and photosensitive composition derived therefrom
TWI716619B (en) * 2016-07-28 2021-01-21 日商住友電木股份有限公司 Nadic anhydride polymers and photosensitive compositions derived therefrom
US10591818B2 (en) 2016-07-28 2020-03-17 Promerus, Llc Nadic anhydride polymers and photosensitive compositions derived therefrom
CN108084331A (en) * 2017-11-21 2018-05-29 江南大学 A kind of biology base film-forming resin and its photoresist of preparation
CN110734520A (en) * 2019-10-09 2020-01-31 宁波南大光电材料有限公司 ArF photoresist resin with high adhesiveness and preparation method thereof
CN110734520B (en) * 2019-10-09 2021-11-26 宁波南大光电材料有限公司 ArF photoresist resin with high adhesiveness and preparation method thereof
CN112679653A (en) * 2020-12-28 2021-04-20 甘肃华隆芯材料科技有限公司 Photoresist film-forming resin and preparation method of photoresist composition thereof
CN113999340A (en) * 2021-10-19 2022-02-01 江苏集萃光敏电子材料研究所有限公司 Film-forming resin containing silicon or sulfur and photoresist composition
CN114163564A (en) * 2021-10-19 2022-03-11 江苏集萃光敏电子材料研究所有限公司 Film-forming resin containing cholic acid-butenoate derivative and photoresist composition
CN114163564B (en) * 2021-10-19 2023-02-28 江苏集萃光敏电子材料研究所有限公司 Film-forming resin containing cholic acid-butenoate derivative and photoresist composition
CN114957532A (en) * 2022-05-26 2022-08-30 广东粤港澳大湾区黄埔材料研究院 Polymer resin for electron beam photoresist and preparation method thereof
CN116199817A (en) * 2023-04-25 2023-06-02 有研工程技术研究院有限公司 Boc-containing gold resinate and positive photo-etching organic gold slurry and preparation method thereof
CN116199817B (en) * 2023-04-25 2023-08-15 有研工程技术研究院有限公司 Boc-containing gold resinate and positive photo-etching organic gold slurry and preparation method thereof

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