CN113999340A - Film-forming resin containing silicon or sulfur and photoresist composition - Google Patents

Film-forming resin containing silicon or sulfur and photoresist composition Download PDF

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CN113999340A
CN113999340A CN202111215044.2A CN202111215044A CN113999340A CN 113999340 A CN113999340 A CN 113999340A CN 202111215044 A CN202111215044 A CN 202111215044A CN 113999340 A CN113999340 A CN 113999340A
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forming resin
film
sulfur
silicon
derivative
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CN113999340B (en
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聂俊
朱晓群
李三保
张宇蔚
孙芳
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Jiangsu Jicui Photosensitive Electronic Material Research Institute Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

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Abstract

The invention relates to a film-forming resin containing silicon or sulfur and a photoresist composition, wherein the comonomer of the film-forming resin comprises acrylate derivative and crotonate derivative; the butenoate derivative is a silicon-containing butenoate derivative or a sulfur-containing butenoate derivative; the silicon-containing butenoate derivative has a structure shown in the following formula (1):
Figure DDA0003310448570000011
the sulfur-containing butenoate derivative has a structure shown in the following formula (2):
Figure DDA0003310448570000012
wherein R is11Is a cyclic group having 3 to 10 ring-constituting atoms and contains at least one sulfur atom as a ring-constituting atom. The film-forming resin has good toughness and good adhesion to a substrate, and the photoresist obtained by the film-forming resin has high resolution.

Description

Film-forming resin containing silicon or sulfur and photoresist composition
Technical Field
The invention relates to the technical field of high polymer materials, in particular to a film-forming resin containing silicon or sulfur and a photoresist composition.
Background
The photolithography technique is a technique in which a resist film made of a resist is formed on the top of a base material, a photomask having a predetermined pattern is irradiated with ultraviolet light, electron beams, X-rays, or the like, and a developed pattern is obtained. After exposure and development, the photoresist with increased solubility is a positive photoresist, and vice versa is a negative photoresist.
As the photolithography technology is continuously developed, the circuit patterns manufactured by the photolithography technology are from simple to complex, the lines are from coarse to fine, and the exposure light source is gradually shortened: ultraviolet radiation represented by i-line (365nm) and g-line (436nm), KrF excimer laser (248nm), ArF excimer laser (193nm), F2Excimer laser (157nm), and the like. Photolithography has become an indispensable technique for manufacturing integrated circuits.
The photoresist is a thin film material with a changed solubility under the irradiation of an exposure light source, and is a key material in the lithography technology. Poly (meth) acrylate and its copolymers are commonly used as film-forming resins for 248nm photoresists, but such film-forming resins have problems of high brittleness and poor adhesion to the substrate material. At the same time, photoresist materials with high resolution are also needed to enable the preparation of very fine photolithographic patterns.
Disclosure of Invention
In order to solve the technical problems of high brittleness and poor adhesion with a substrate material of a film-forming resin commonly used for 248nm photoresist in the prior art and the technical problem of poor resolution of the photoresist obtained by adopting the film-forming resin, the film-forming resin containing silicon or sulfur and the photoresist composition are provided. The film-forming resin has good toughness and good adhesion to a substrate, and the photoresist obtained by the film-forming resin has high resolution.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a silicon-or sulfur-containing film-forming resin, the comonomers of the film-forming resin comprising acrylate derivatives and crotonate derivatives; the butenoate derivative is a silicon-containing butenoate derivative or a sulfur-containing butenoate derivative;
the silicon-containing butenoate derivative has a structure shown in the following formula (1):
Figure BDA0003310448550000021
wherein x is an integer of 1 to 6, R1And R2、R2And R3Can be combined with each other to form a ring structure, R1、R2、R3Each independently selected from hydrogen atom, unsubstituted or substituted by a substituent1-20Straight or branched hydrocarbon radical, unsubstituted or substituted by substituents C3-10One of a cyclic hydrocarbon group, a silicon hydrocarbon group which is unsubstituted or substituted by a substituent group;
the sulfur-containing butenoate derivative has a structure shown in the following formula (2):
Figure BDA0003310448550000022
wherein R is22And R33、R11And R33Can be combined with each other to form a ring structure; r11Is a cyclic group with 3-10 ring-constituting atoms and at least contains one sulfur atom as a ring-constituting atom; r22And R33Each independently selected from hydrogen atom, unsubstituted or substituted by a substituent1-20Straight or branched hydrocarbon radical, unsubstituted or substituted by substituents C3-20Cycloalkyl, unsubstituted or substituted C6-10Aryl, unsubstituted or substitutedSubstituted C7-10One of alkenyl and polycyclic group with 3-30 constituent ring atoms.
Preferably, the silicon-containing butenoate derivative is selected from any one of the following structures:
Figure BDA0003310448550000023
preferably, the sulfur-containing crotonate derivative is selected from any one of the following structures:
Figure BDA0003310448550000031
further, the acrylate derivative has a structure represented by the following formula (3):
Figure BDA0003310448550000032
wherein R is5From methyl or hydrogen atoms, R4Taken from hydrogen atoms, C1-10Straight or branched chain hydrocarbon radical, C3-10Cyclic hydrocarbon groups, silicon-containing straight chain or branched chain groups.
Preferably, R in the acrylate derivative4Any one selected from the following structures:
Figure BDA0003310448550000033
wherein
Figure BDA0003310448550000034
Represents R4A bond to oxygen in the structure.
Furthermore, the molecular weight of the film-forming resin is 6000-35000 g/mol, and the molecular weight distribution is 1.0-3.0.
In another aspect, the invention provides a photoresist composition comprising the film-forming resin described above.
Further, the photoresist composition comprises the following raw materials in percentage by mass: 10-50% of film-forming resin, 0.01-5% of photoacid generator, 0.1-1% of auxiliary agent and 44-89.89% of solvent.
Still further, the acid generator includes, but is not limited to, one or more of sulfonium salt compounds, iodonium salt compounds, triazine compounds, sulfonate ester compounds, p-toluenesulfonic acid derivatives, diazonium salt compounds, and diazomethane derivatives.
Still further, the adjuvants include, but are not limited to, one or more of triethanolamine, tripropylamine, N-butylamine, triethoxyethanolamine, trioctylamine, tributylamine, trimethoxyethoxymethoxyethylamine, tetramethylammonium hydroxide, polyquaternary ammonium bases, 9- (2-methoxyethoxy) methylanthracene, 9-anthrylmethylacetate, diazomethanesulfonyl, adamantanecarboxylic acid, diphenolic acid, O-acetal, N, O-acetal, pinacol-based substances, phthalaldehyde, catechol, benzoate;
the solvent includes, but is not limited to, one or more of propylene glycol monoacetate, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol methyl ethyl ether, butyl acetate, neopentyl acetate, ethyl lactate, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, diacetone alcohol, and gamma-butyrolactone.
The beneficial technical effects are as follows:
the invention copolymerizes silicon-containing crotonate derivative or sulfur-containing heterocyclic crotonate derivative with acrylate derivative to obtain film-forming resin, and uses the film-forming resin to prepare 248nm photoresist, and the prepared photoresist has good toughness, good adhesion to substrate materials, and high resolution after photoetching development.
Wherein the sulfur-containing heterocyclic photoresist has a more excellent resolution than the silicon-containing photoresist, and the silicon-containing photoresist has a better adhesion than the sulfur-containing heterocyclic photoresist. The sulfur-containing heterocyclic photoresist can effectively disperse positive charges on carbon atoms connected with ester through resonance compared with silicon-containing photoresist, so that the dissociation property of acid-sensitive groups can be improved, the resolution is higher, and the photoetching pattern is clearer; compared with a sulfur-containing heterocyclic photoresist, the silicon-containing photoresist has flexible silicon-oxygen bonds, the brittleness of the film-forming resin can be reduced due to the flexible silicon-oxygen bonds, and the adhesive force of the film-forming resin to a substrate can be improved due to the alkoxy silicon structure.
Drawings
FIG. 1 is an SEM image of a lithographic pattern obtained after lithographic development of a photoresist 6 made from the film-forming resin of example 6.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention and the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Unless specifically stated otherwise, the numerical values set forth in these examples do not limit the scope of the invention. Techniques, methods known to those of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
The experimental methods of the following examples, which are not specified under specific conditions, are generally determined according to national standards; if no corresponding national standard exists, the method is carried out according to the universal international standard or the standard requirement proposed by related enterprises. Unless otherwise indicated, all parts are parts by weight and all percentages are percentages by weight.
Example 1
This example is a sulfur-containing film-forming resin, the comonomers of which are compound (I) and compound (II), and the polymerization equation is as follows:
Figure BDA0003310448550000051
the polymerization process is as follows: a500 mL three-necked flask was charged with 8.76g of Compound (I), 11.24g of Compound (II), 0.40g of azo diisocyanate (AIBN), which is a radical initiator, and 200mL of methyl isobutyl ketone as a solvent. And under the protection of nitrogen, controlling the reaction temperature to be 75-80 ℃, and stirring for reaction for 10 hours. After the reaction is finished and the reaction solution is cooled to 25 ℃, extracting the product with methanol, repeating the extraction for three times, and drying the product in an oven for 20 hours to obtain the compound (I) -compound (II) binary copolymerization film-forming resin, which is marked as film-forming resin 1.
The product was tested by GPC (gel permeation chromatography) and the resulting film-forming resin 1 had a weight average molecular weight of 6100g/mol and a molecular weight distribution of 2.32.
In this example, compound (I) was obtained by esterification of crotonic acid with 2- (thien-2-yl) propan-2-ol (CAS No.16077-78-4), and compound (II) was a commercial product of 1-adamantyl methacrylate (CAS No. 16887-36-8). The conditions of the esterification reaction can be optimized by routine optimization experiments to obtain the optimal reaction conditions.
Example 2
This example is a sulfur-containing film-forming resin, the raw materials, polymerization equation and polymerization process used are the same as in example 1, except that: the amounts of the starting materials used were 4.84g of Compound (I), 15.16g of Compound (II) and 0.35g of AIBN, and the film-forming resin obtained by polymerization was designated as film-forming resin 2.
The product was tested by GPC (gel permeation chromatography), and the resulting film-forming resin 2 had a weight average molecular weight of 7400g/mol and a molecular weight distribution of 2.48.
Example 3
This example is a sulfur-containing film-forming resin, the raw materials, polymerization equation and polymerization process used are the same as in example 1, except that: the amounts of the starting materials used were 6.37g of Compound (I), 13.63g of Compound (II) and 0.45g of AIBN, and the film-forming resin obtained by polymerization was designated as film-forming resin 3.
The product was tested by GPC (gel permeation chromatography) and the resulting film-forming resin 3 had a weight average molecular weight of 4300g/mol and a molecular weight distribution of 2.11.
Example 4
This example is a sulfur-containing film-forming resin, the comonomers of the film-forming resin of this example are compound (III) and compound (II), and the polymerization equation is as follows:
Figure BDA0003310448550000061
the polymerization procedure was the same as in example 1, except that: the amounts of the raw materials used were 4.01g of Compound (III), 15.99g of Compound (II) and 0.40g of AIBN, and the film-forming resin obtained by polymerization was designated as film-forming resin 4.
The product was tested by GPC (gel permeation chromatography) and the resulting film-forming resin 4 had a weight average molecular weight of 6200g/mol and a molecular weight distribution of 2.34.
In this example, the compound (III) is obtained by esterification of crotonic acid with (R) -2- (thien-2-yl) butane-2-ol.
Example 5
This example is a sulfur-containing film-forming resin, the comonomers of the film-forming resin of this example are compound (IV) and compound (II), and the polymerization equation is as follows:
Figure BDA0003310448550000062
the polymerization procedure was the same as in example 1, except that: the amounts of the starting materials used were 3.81g of Compound (IV), 16.19g of Compound (II) and 0.35g of AIBN, and the film-forming resin obtained by polymerization was designated as film-forming resin 5.
The product was tested by GPC (gel permeation chromatography), and the resulting film-forming resin 5 had a weight average molecular weight of 7700g/mol and a molecular weight distribution of 1.95.
In this example, the compound (IV) was obtained by esterification of crotonic acid with (1R) -1- (2-thienyl) ethanol (CAS No. 86527-10-8).
Example 6
This example is a silicon-containing film-forming resin, the comonomers of which are compound (i) and compound (II), and the polymerization equation is as follows:
Figure BDA0003310448550000071
the polymerization process is as follows: a500 mL three-necked flask was charged with 4.77g of Compound (i), 15.23g of Compound (II), 0.40g of azo diisocyanate (AIBN), which is a radical initiator, and 200mL of gamma-butyrolactone, which is a solvent. And under the protection of nitrogen, controlling the reaction temperature to be 75-80 ℃, and stirring for reaction for 24 hours. After the reaction is finished, cooling the reaction liquid to below 25 ℃, extracting the product by petroleum ether, and repeating the process for three times. And drying the extracted product in an oven for 20 hours to obtain the compound (i) -compound (II) binary copolymerization film-forming resin which is marked as film-forming resin 6.
The product was tested by GPC (gel permeation chromatography) and the resulting film-forming resin 6 had a weight average molecular weight of 7300g/mol and a molecular weight distribution of 2.37.
In this example, compound (i) was prepared by esterification of crotonic acid with 2- (trimethoxysilyl) ethanol. (same procedure as for the preparation of 3- (trimethoxysilyl) propyl methacrylate, which is a commercial product).
Example 7
This example is a silicon-containing film-forming resin, the raw materials, polymerization equation and polymerization process used are the same as in example 6, except that: the amounts of the starting materials used were 3.13g of Compound (i), 16.87g of Compound (II) and 0.45g of AIBN, and the film-forming resin obtained by polymerization was designated as film-forming resin 7.
The product was tested by GPC (gel permeation chromatography), and the resulting film-forming resin 7 had a weight average molecular weight of 5100g/mol and a molecular weight distribution of 2.13.
Example 8
This example is a silicon-containing film-forming resin, the raw materials, polymerization equation and polymerization process used are the same as in example 6, except that: the amounts of the raw materials used were 7.04g of Compound (i), 12.96g of Compound (II) and 0.35g of AIBN, and the film-forming resin obtained by polymerization was designated as film-forming resin 8.
The product was tested by GPC (gel permeation chromatography) and the resulting film-forming resin 8 had a weight average molecular weight of 8300g/mol and a molecular weight distribution of 1.95.
Example 9
This example is a silicon-containing film-forming resin, the comonomers of which are compound (ii) and compound (ii), and the polymerization equation is as follows:
Figure BDA0003310448550000081
the polymerization procedure was the same as in example 6, except that: the amounts of the starting materials used were 3.42g of Compound (ii), 16.58g of Compound (II) and 0.10g of AIBN, and the film-forming resin obtained by polymerization was designated as film-forming resin 9.
The product was tested by GPC (gel permeation chromatography) and the resulting film-forming resin 9 had a weight average molecular weight of 3400g/mol and a molecular weight distribution of 2.31.
In this example, compound (ii) was obtained by esterification of crotonic acid with 2- (trimethoxysilyl) propanol (CAS No. 53764-54-8).
Example 10
This example is a silicon-containing film-forming resin, the comonomers of which are compound (iii) and compound (II), and the polymerization equation is as follows:
Figure BDA0003310448550000082
the polymerization procedure was the same as in example 6, except that: the amounts of the starting materials used were 3.83g of compound (iii), 16.17g of compound (II) and 0.30g of AIBN, and the film-forming resin obtained by polymerization was designated as film-forming resin 10.
The product was tested by GPC (gel permeation chromatography) and the resulting film-forming resin 10 had a weight average molecular weight of 11500g/mol and a molecular weight distribution of 2.07.
In this example, the compound (iii) was obtained by esterification of crotonic acid with 2- (triethoxysilyl) ethanol (CAS No. 7795-63-3).
Example 11
The film-forming resins of examples 1-10 above (corresponding to film-forming resins 1-10) were used to prepare 248nm photoresist compositions, which were identified as photoresists 1-10, respectively.
The 248nm photoresist composition comprises the following raw materials: 10% of the film-forming resin, 0.5% of diphenyliodonium perfluorooctane sulfonate, 0.1% of tributylamine and 89.4% of propylene glycol methyl ether acetate, which are mixed and placed on a mechanical vibrator, the mixture is fully dissolved by oscillating for 10-24 hours at room temperature, the mixture is filtered once by a 0.2 μm filter and then filtered twice by a 0.05 μm filter, and the liquid 248nm photoresist composition is obtained.
The photoresist obtained above was subjected to a photolithography resolution test and an edge roughness test, and the results are shown in tables 1 and 2.
248nm lithography resolution and edge roughness test: the above 10 248nm photoresist compositions were placed on a silicon wafer, spin-coated at 3000 rpm to a film of 8 μm, baked on a hot plate at 100 ℃ for 150 seconds, and then exposed to light using a 248nm exposure machine. After exposure, baking the substrate on a hot plate at 110 ℃ for 90s, finally developing the substrate in 2.38% tetramethylammonium hydroxide developer for 60s, and drying the substrate to obtain a photoetching pattern.
The lithographic pattern of photoresist 6 after lithographic development (as shown in FIG. 1) was observed using a Scanning Electron Microscope (SEM), and it can be seen from FIG. 1 that the lithographic pattern had clear lines and sharp edges.
The resolution data are shown in table 1.
The adhesion of the photoresist on the silicon wafer is also tested according to the GB/T9286-.
TABLE 1 Properties of examples 1-10 corresponding to photoresists 1-10 obtained
Figure BDA0003310448550000091
Figure BDA0003310448550000101
As can be seen from Table 1, the film-forming resin obtained by copolymerizing the silicon-containing crotonate derivative or the sulfur-containing heterocyclic crotonate derivative with the acrylate derivative is used for preparing the 248nm photoresist, and the prepared photoresist has high resolution, and good adhesion and toughness to the substrate material. The sulfur-containing heterocyclic photoresist has better resolution (the resolution of the sulfur-containing heterocyclic photoresist is less than 0.3 mu m) than the silicon-containing photoresist, and the silicon-containing photoresist has better adhesive force (the adhesive force of the silicon-containing photoresist reaches 0 level) than the sulfur-containing heterocyclic photoresist, because the sulfur-containing heterocyclic photoresist can effectively disperse positive charges on carbon atoms connected with ester through resonance compared with the silicon-containing photoresist, the dissociation property of acid sensitive groups can be improved, so that the resolution is higher, and a photoetching pattern is clearer; compared with a sulfur-containing heterocyclic photoresist, the silicon-containing photoresist has flexible silicon-oxygen bonds, the brittleness of the film-forming resin can be reduced due to the flexible silicon-oxygen bonds, and the adhesive force of the film-forming resin to a substrate can be improved due to the alkoxy silicon structure.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

Claims (10)

1. A silicon-or sulfur-containing film-forming resin, wherein the comonomers of the film-forming resin comprise acrylate derivatives and crotonate derivatives;
the butenoate derivative is a silicon-containing butenoate derivative or a sulfur-containing butenoate derivative;
the silicon-containing butenoate derivative has a structure shown in the following formula (1):
Figure FDA0003310448540000011
wherein x is an integer of 1 to 6, R1And R2、R2And R3Can be combined with each other to form a ring structure, R1、R2、R3Each independently selected from hydrogen atom, unsubstituted or substituted by a substituent1-20Straight or branched hydrocarbon radical, unsubstituted or substituted by substituents C3-10One of a cyclic hydrocarbon group, a silicon hydrocarbon group which is unsubstituted or substituted by a substituent group;
the sulfur-containing butenoate derivative has a structure shown in the following formula (2):
Figure FDA0003310448540000012
wherein R is22And R33、R11And R33Can be combined with each other to form a ring structure; r11Is a cyclic group with 3-10 ring-constituting atoms and at least contains one sulfur atom as a ring-constituting atom; r22And R33Each independently selected from hydrogen atom, unsubstituted or substituted by a substituent1-20Straight or branched hydrocarbon radical, unsubstituted or substituted by substituents C3-20Cycloalkyl, unsubstituted or substituted C6-10Aryl, unsubstituted or substituted by substituents C7-10One of alkenyl and polycyclic group with 3-30 constituent ring atoms.
2. The silicon-or sulfur-containing film-forming resin of claim 1, wherein the silicon-containing crotonate derivative is selected from any one of the following structures:
Figure FDA0003310448540000013
3. the silicon-or sulfur-containing film-forming resin of claim 1, wherein the sulfur-containing crotonate derivative is selected from any one of the following structures:
Figure FDA0003310448540000021
4. the silicon-or sulfur-containing film-forming resin according to any one of claims 1 to 3, wherein the acrylate derivative has a structure represented by the following formula (3):
Figure FDA0003310448540000022
wherein R is5From methyl or hydrogen atoms, R4Taken from hydrogen atoms, C1-10Straight or branched chain hydrocarbon radical, C3-10Cyclic hydrocarbon groups, silicon-containing straight chain or branched chain groups.
5. The silicon-or sulfur-containing film-forming resin of claim 4, wherein R in the acrylate derivative is4Any one selected from the following structures:
Figure FDA0003310448540000023
wherein
Figure FDA0003310448540000024
Represents R4A bond to oxygen in the structure.
6. A silicon-or sulfur-containing film-forming resin according to any one of claims 1 to 3, wherein the molecular weight of the film-forming resin is 6000 to 35000g/mol and the molecular weight distribution is 1.0 to 3.0.
7. A photoresist composition comprising the film forming resin of any one of claims 1-6.
8. The photoresist composition according to claim 7, wherein the photoresist composition comprises the following raw materials in percentage by mass: 10-50% of film-forming resin, 0.01-5% of photoacid generator, 0.1-1% of auxiliary agent and 44-89.89% of solvent.
9. The photoresist composition of claim 8, wherein the acid generator includes, but is not limited to, one or more of sulfonium salt compounds, iodonium salt compounds, triazine compounds, sulfonate ester compounds, p-toluenesulfonic acid derivatives, diazonium salt compounds, and diazomethane derivatives.
10. The photoresist composition of claim 8, wherein the auxiliary agent includes, but is not limited to, one or more of triethanolamine, tripropylamine, N-butylamine, triethoxyethanolamine, trioctylamine, tributylamine, trimethoxyethoxymethoxyethylamine, tetramethylammonium hydroxide, polyquaterniums, 9- (2-methoxyethoxy) methylanthracene, 9-anthracylmethyl acetate, diazomethane sulfonyl, adamantanecarboxylic acid, diphenolic acid, O-acetal, N, O-acetal, pinacol-based substances, phthalaldehyde, catechol, and benzoate;
the solvent includes, but is not limited to, one or more of propylene glycol monoacetate, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol methyl ethyl ether, butyl acetate, neopentyl acetate, ethyl lactate, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, diacetone alcohol, and gamma-butyrolactone.
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