CN1827364A - Perovskites semimetal composite multilayer membrane prepared by one ingredient and use thereof - Google Patents
Perovskites semimetal composite multilayer membrane prepared by one ingredient and use thereof Download PDFInfo
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Abstract
The invention relates to a component modulated perovskite semi-metallic composite multilayer film and relative application. Wherein the core of composite multilayer film is FM1/I/FM2/AFM, AFM/FM1/I/FM2 or AFM1/FM1/I1/FM2/I2/FM3/AFM2, while all semi-metallic iron magnetic layers that FM1, FM2 and FM3, and the insulated barrier layer that I, I1, and I2 are all the perovskite oxide film; said perovskite oxide is Al-xBxMo3, while A is selected from one or several of 57-71 elements; B is one or several of alkali or alkali earth metals; M is selected from one or several of 22-30, 40-51 and 73-80 elements. The nearby material layers of said composite multilayer film has better lattice matching property, less interface stress, better layered structure, and high tunnel magnetic resistance, which can be used in magnetic sensitive, electric sensitive, optical sensitive and gas sensitive sensor, magnetic random memory and other self-rotational electric devices.
Description
Technical field
The present invention relates to a kind of composite multilayer membrane and uses thereof, specifically relate to a kind of perovskite semimetal composite multilayer membrane of composition modulation and the application in device thereof.
Background technology
In Julli é re in 1975 compound (magnetic material/insulator or semiconductor/magnetic material) multilayer film, find tunneling magnetic resistance (Tunnel Magnetoresistance at the Fe/Ge/Co sandwich structure, TMR) since the effect, people have carried out extensively and systematic research a series of FM/I (S)/FM composite multilayer membrane.In FM/I as shown in Figure 1 (S)/FM composite multilayer membrane, FM represents ferromagnetic metal or semimetal layer, and I (S) represents insulator (or semiconductor) barrier layer.Discover that this class composite multilayer membrane has characteristics such as low saturation magnetic field and little coercivity, can be applicable to magneto-dependent sensor and magnetic RAM (MRAM) memory cell and other spintronics device.
1993, people such as Helmolt were at La
2/3Ba
1/3MnO
3(ColossalMagnetoresistance, CMR) effect show that the perovskite oxide has important application prospects to have observed huge magneto-resistor in the single thin film.For this class semi-metallic of perovskite oxide, owing to have only one can be with from copper plate conduction electron is arranged on Fermi surface, and all conduction electrons all have identical spin direction, and spin polarizability (P) can reach 100%.Therefore, utilize the spinning valve type magnetoresistance effect or the MTJ of this class semi-metallic preparation in principle, can obtain huge magneto-resistance effect in theory.
As document 1:J.Z.Sun, W.J.Gallagher, P.R.Duncombe, L.Krusin-Elbaum, R.A.Altman, A.Gupta, Yu Lu, G.Q.Gong, and Gang Xiao, Appl.Phys.Lett.69, described in 3266 (1996), people such as the Sun of IBM Corporation are with perovskite oxide La
0.67Sr
0.33MnO
3Deng being applied in composite multilayer membrane FM/I (S)/EM structure, taken the lead in studying the Tunneling Magnetoresistance of this class mixed valence compound, and at La
0.67Sr
0.33MnO
3/ SrTiO
3/ La
0.67Sr
0.33MnO
3Observe in the tunnel junction its tunneling magnetic resistance ratio at low temperatures (T=191K) be 2%.As document 2:H.Q.Yin, J.S.Zhou, K.Sugawara, J.B.Goodenough, J.Magn.Magn.Mater.222,115 (2000) and document 3:D.Ozkaya, A.K.Petford-Long, Moon-Ho Jo, andM.G.Blamire, J.Appl.Phys.89, described in 6757 (2001), people such as Yin and Ozkaya disclose the heterogeneous La of isomorphism respectively
0.67Sr
0.33MnO
3/ La
0.85Sr
0.15MnO
3/ La
0.67Sr
0.33MnO
3And La
0.7Ca
0.3MnO
3/ La
0.45Ca
0.55MnO
3/ La
0.7Ca
0.3MnO
3The composite multilayer membrane of the sandwich structure of perovskite oxide, and observe it and have 6% and 18% Tunneling Magnetoresistance at low temperatures.
These tunneling magnetic resistance ratios based on perovskite oxide composite multilayer membrane are generally lower, can not show a candle to the theoretical value height of estimating, this is because exist diffusion between the interface of composite multilayer membrane, make crystal structure and the desirable correct composition that the perovskite oxide can not remain intact, thereby fail to obtain sufficiently high magneto-resistor ratio, cause its semimetal characteristic not present fully, be unfavorable for the application of practical devices.
Summary of the invention
There is diffusion in the perovskite semimetal composite multilayer membrane that the objective of the invention is to overcome prior art for preparing between the interface, cause its tunneling magnetic resistance ratio low, be unfavorable for the defective that practical devices is used, thereby provide have excellent lattice matching between a kind of adjacent materials layer, minimum interfacial stress, interface layer structure preferably, can guarantee to obtain high-quality barrier layer and potential barrier interface, the perovskite semimetal composite multilayer membrane that makes the composition modulation that its tunneling magnetic resistance ratio is high, and uses thereof.
The objective of the invention is to realize by the following technical solutions:
The invention provides a kind of perovskite semimetal composite multilayer membrane of composition modulation, its core texture comprises four layers: the first semimetal ferromagnetic layer (hereinafter to be referred as FM1), insulator barrier layer (hereinafter to be referred as I), the second semimetal ferromagnetic layer (hereinafter to be referred as FM2), anti-ferromagnetism pinning layer (hereinafter to be referred as AFM), be FM1/I/FM2/AFM, or AFM/FM1/I/FM2; The thickness of described semimetal ferromagnetic layer, insulator barrier layer, anti-ferromagnetism pinning layer is 0.1～200nm.
The invention provides the perovskite semimetal composite multilayer membrane of another kind of composition modulation, its core texture comprises seven layers: the first anti-ferromagnetism pinning layer (hereinafter to be referred as AFM1), the first semimetal ferromagnetic layer (hereinafter to be referred as FM1), the first insulator barrier layer (hereinafter to be referred as I1), the second semimetal ferromagnetic layer (hereinafter to be referred as FM2), the second insulator barrier layer (hereinafter to be referred as I2), the 3rd semimetal ferromagnetic layer (hereinafter to be referred as FM3), the second anti-ferromagnetism pinning layer (hereinafter to be referred as AFM2), be AFM1/FM1/I1/FM2/I2/FM3/AFM2, described semimetal ferromagnetic layer, the insulator barrier layer, the thickness of anti-ferromagnetism pinning layer is 0.1～200nm.
Wherein, all semimetal ferromagnetic layer FM1, FM2, FM3 and insulator barrier layer I, I1, I2 are the perovskite sull.Described perovskite oxide is A
1-xB
xMO
3The type oxide; A is selected from atomic number 57 to 71 elements one or more, and B is selected from alkali metal or the alkaline-earth metal one or more; M is for being selected from atomic number 22～30, one or more in 40～51 and 73～80 elements.
Preferably, the perovskite oxide of described semimetal ferromagnetic layer is La
1-xSr
xMnO
3(0.16＜x＜1.0), La
1-xCa
xMnO
3(0.18＜x＜0.5), or Pr
1-xSr
xMnO
3(0.3＜x＜1.0).
Accordingly, the perovskite oxide that described insulator barrier layer is a same material, it is La
1-ySr
yMnO
3(0＜y＜0.16), La
1-yCa
yMnO
3(0＜y＜0.18 or 0.5＜y＜1.0), or Pr
1-ySr
yMnO
3(0＜y＜0.3).
Described anti-ferromagnetism pinning layer is anti-ferromagnetism metal and alloy or the artificial pinning material of anti-ferromagnetism, as Cr, Ir-Mn, Pt-Mn, Fe-Mn, Cr-Pt, CoO, NiO, Co/Ru/Co, Co-Fe/Ru/Co-Fe, Co/Cu/Co or anti-ferromagnetism perovskite rare earth manganese oxide etc.
The perovskite semimetal composite multilayer membrane of composition modulation provided by the invention is on the substrate of any one selected prior art, utilizes conventional method for manufacturing thin film and corresponding micro fabrication to be prepared from.Described method for manufacturing thin film can be magnetron sputtering, molecular beam epitaxy (MBE), electron beam evaporation, pulsed laser deposition (PLD), metal oxide chemical vapor deposition (MOCVD) or sol-gel process etc.Described micro fabrication can be photoetching process, metal mask method, ion beam etching, focused-ion-beam lithography and chemical reaction etching etc.
The perovskite semimetal composite multilayer membrane of composition modulation provided by the invention can be used for highly sensitive magnetosensitive, electricity quick, photosensitive and gas sensor, magnetic RAM (MRAM) memory cell and other spintronics device.
Compared with prior art, the perovskite semimetal composite multilayer membrane of composition modulation provided by the invention is the composite multilayer membrane that adopts the method preparation of composition modulation, its excellent part is: the perovskite oxide semimetal composite multi-layer membrane material that the present invention is to provide a kind of composition modulation, has excellent lattice matching between its adjacent materials layer, minimum interfacial stress, interface layer structure etc. preferably, even the effect that diffusion also can only produce compression or attenuate barrier layer takes place in a small amount of modulation (doping) atom at the interface, can not destroy the insulating properties of barrier layer, can not reduce the spin polarizability on semimetal ferromagnetic layer surface, barrier layer both sides yet, thereby guarantee to obtain high-quality barrier layer and potential barrier interface, fully realize the semimetal ferromagnetism of perovskite oxide, anti-ferromagnetism, insulating properties, physical characteristics such as paramagnetic properties make that its tunneling magnetic resistance ratio is very high.Adopt the device of this composite multi-layer membrane structure, the performance of its device is significantly improved, and under uniform temperature and externally-applied magnetic field effect, can present the characteristics of high tunneling magnetic resistance and highfield sensitivity.Be particularly suitable for being applied to highly sensitive magnetosensitive, electricity quick, photosensitive and gas sensor, magnetic RAM (MRAM) memory cell and other spintronics device.
For example, the compound four tunic La of perovskite semimetal that modulate with the strontium composition of the embodiment of the invention 7 preparations
0.7Sr
0.3MnO
3(FM1)/La
0.96Sr
0.04MnO
3(I)/La
0.7Sr
0.3MnO
3(FM2)/ unipotential that Ir-Mn constitutes builds composite magnetic tunnel junction SrTiO
3(001)-Sub./La
0.7Sr
0.3MnO
3(001) [100nm]/La
0.96Sr
0.04MnO
3(001) [5nm]/La
0.7Sr
0.3MnO
3(001) [100nm]/Ir-Mn[15nm], observed high magneto-resistor ratio at 4.2K up to 9050%, understand La from the device application level Shanghai Stock Exchange of material for the first time
1-xSr
xMnO
3Spin polarizability can reach 100%, has semimetal character.
Description of drawings
Fig. 1 is the schematic diagram of composite multilayer membrane FM/I (the S)/FM of the common sandwich structure that adopts in the prior art; Wherein FM represents the ferromagnetic metal layer, and I (S) represents insulator (or semiconductor) barrier layer;
Fig. 2 is the generalized section of building the composite magnetic tunnel junction by the unipotential that four layers of core layer composite multilayer membrane that embodiment 1 prepares constitute; Wherein, 1 is semimetal ferromagnetic layer La
0.7Sr
0.3MnO
3, 2 be insulator barrier layer La
0.96Sr
0.04MnO
3, 3 be that anti-ferromagnetism pinning layer Ir-Mn, 4 is for substrate S rTiO
3, 5 be SiO
2, 6 be that top electrode, 7 is for hearth electrode;
Fig. 3 is the compound four tunic La of perovskite semimetal of the strontium composition modulation of embodiment 7 preparations
0.7Sr
0.3MnO
3/ La
0.96Sr
0.04MnO
3/ La
0.7Sr
0.3MnO
3The unipotential that/Ir-Mn constitutes is built the tunneling magnetic resistance TMR of composite magnetic tunnel junction and the graph of a relation of resistance R and magnetic field H.
The specific embodiment
Select the ferromagnetic metal oxide La of Sr composition range in 0.16＜x＜1.0
1-xSr
xMnO
3(FM), select the La of Sr composition range in 0＜y＜0.16 as the semimetal ferromagnetic layer
1-ySr
yMnO
3(I) as the insulator barrier layer.Utilize magnetron sputtering chemical reaction deposit and heat-treating methods at (001) orientation SrTiO
3Prepare compound four tunics of perovskite semimetal of a series of strontium composition modulation of the present invention on the single crystalline substrate---have the La of the sandwich structure of same material composition strontium
1-xSr
xMnO
3(FM1)/La
1-ySr
yMnO
3(I)/La
1-xSr
xMnO
3(FM2) the tunnel junction epitaxial film of (wherein, 0.16＜x＜1.0,0＜y＜0.16).And then utilize magnetically controlled sputter method above three layer tunnel knot epitaxial film, to continue films such as deposition anti-ferromagnetism pinning layer; Utilize conventional micro fabrication technology such as deep ultraviolet exposure photo-etching and Ar ion beam etching at last, prepare corresponding unipotential and build the composite magnetic tunnel junction, its generalized section as shown in Figure 2.Also can deposit anti-ferromagnetism pinning layer AFM earlier, deposition has the sandwich structure La of same material composition strontium again
1-xSr
xMnO
3(FM1)/La
1-ySr
yMnO
3(I)/La
1-xSr
xMnO
3And utilize four layers of core texture of method preparation of same fabricate devices to be AFM/La (FM2),
1-xSr
xMnO
3(FM1)/La
1-ySr
yMnO
3(I)/La
1-xSr
xMnO
3(FM2) unipotential of (wherein, 0.16＜x＜1.0,0＜y＜0.16) is built the composite magnetic tunnel junction.It is formed and performance is listed in table 1.
The compound four tunic La of perovskite semimetal for the strontium composition modulation of embodiment 7 preparation
0.7Sr
0.3MnO
3(FM1)/La
0.96Sr
0.04MnO
3(I)/La
0.7Sr
0.3MnO
3(FM2)/ unipotential that Ir-Mn constitutes builds composite magnetic tunnel junction SrTiO
3(001)-Sub./La
0.7Sr
0.3MnO
3(001) [100nm]/La
0.96Sr
0.04MnO
3(001) [5nm]/La
0.7Sr
0.3MnO
3(001) [100nm]/Ir-Mn[15nm], relation such as Fig. 3 of its tunneling magnetic resistance TMR and resistance R and magnetic field H show, its tunneling magnetic resistance (TMR) ratio can be up to 9050% (temperature T=4.2K, externally-applied magnetic field H=12T), spin polarizability (P=99%) is understood La from the device application level Shanghai Stock Exchange of material for the first time near 100%
1-xSr
xMnO
3Has semimetal character.
The composition and the performance of the perovskite semimetal composite multilayer membrane of table 1, the modulation of Sr composition
| Embodiment | The semimetal ferromagnetic layer | The insulator barrier layer | The anti-ferromagnetism pinning layer | Tunneling magnetic resistance ratio/% | |||
| Form | Thickness (nm) | Form | Thickness (nm) | Form | Thickness (nm) | ||
| 1 | La 0.05Sr 0.95MnO 3 | 120 | La 0.99Sr 0.01MnO 3 | 1 | CoO | 180 | 7056 |
| 2 | La 0.67Sr 0.33MnO 3 | 180 | La 0.99Sr 0.01MnO 3 | 180 | NiO | 5 | 7013 |
| 3 | La 0.7Sr 0.3MnO 3 | 80 | La 0.99Sr 0.01MnO 3 | 1 | Cr | 30 | 8943 |
| 4 | La 0.8Sr 0.2MnO 3 | 60 | La 0.99Sr 0.01MnO 3 | 2 | Pt-Mn | 15 | 9017 |
| 5 | La 0.05Sr 0.95MnO 3 | 20 | La 0.96Sr 0.04MnO 3 | 3 | Fe-Mn | 20 | 8762 |
| 6 | La 0.67Sr 0.33MnO 3 | 50 | La 0.96Sr 0.04MnO 3 | 4 | Cr-Pt | 20 | 8456 |
| 7 | La 0.7Sr 0.3MnO 3 | 100 | La 0.96Sr 0.04MnO 3 | 5 | Ir-Mn | 12 | 9050 |
| 8 | La 0.8Sr 0.2MnO 3 | 10 | La 0.96Sr 0.04MnO 3 | 10 | Co/Ru/Co | 9 | 7968 |
| 9 | La 0.05Sr 0.95MnO 3 | 30 | La 0.85Sr 0.15MnO 3 | 20 | Co-Fe/Ru/Co-Fe | 9 | 6999 |
| 10 | La 0.67Sr 0.33MnO 3 | 50 | La 0.85Sr 0.15MnO 3 | 5 | Co/Cu/Co | 10 | 8249 |
| 11 | La 0.7Sr 0.3MnO 3 | 100 | La 0.85Sr 0.15Mn 3 | 6 | Pt-Mn | 12 | 8354 |
| 12 | La 0.8Sr 0.2MnO 2 | 20 | La 0.85Sr 0.15Mn 3 | 10 | Ir-Mn | 12 | 7578 |
The operation principles of all composite multi-layer membrane modules is based on tunneling magnetic resistance (TMR) effect among the embodiment 1～12, and it is to produce under the transport mechanism of spin correlation tunnelling.For example, build composite magnetic tunnel junction, its tunneling magnetic resistance TMR=(R for the unipotential in the present embodiment 1～12
AP-R
P)/R
P=2P
1P
2/ (1-P
1P
2), R wherein
APAnd R
PBe respectively the two halves metallic iron magnetosphere intensity of magnetization and be in the resistance value of antiparallel composite magnetic tunnel junction when parallel, P
1And P
2Be respectively the magnetospheric spin polarizability of two halves metallic iron.
Embodiment 13～24
Be same as embodiment 1～12, select the ferromagnetic metal oxide La of Sr composition range in 0.16＜x＜1.0
1-xSr
xMnO
3(FM), select the La of Sr composition range in 0＜y＜0.16 as the semimetal ferromagnetic layer
1-ySr
yMnO
3(I) as the insulator barrier layer.And the method for utilizing same fabricate devices can be prepared compound seven tunics of perovskite semimetal of a series of strontium composition modulation of the present invention---have the AFM1/La of same material composition strontium
1-xSr
xMnO
3(FM1)/La
1-ySr
yMnO
3(I1)/La
1-xSr
xMnO
3(FM2)/La
1-ySr
yMnO
3(I2)/La
1-xSr
xMn
3(FM3)/AFM2 (wherein, 0.16＜x＜1.0,0＜y＜0.16) be core texture perovskite oxide double potential barrier composite magnetic tunnel junction.It is formed and performance is listed in table 2.
In this double potential barrier composite magnetic tunnel junction, the first and second anti-ferromagnetism pinning layers (AFM1 and AFM2) have pinning effect; The direction of magnetization of the first semimetal ferromagnetic layer (FM1) is relatively-stationary; The direction of magnetization of the second semimetal ferromagnetic layer (FM2) is arbitrarily; The direction of magnetization of the 3rd semimetal ferromagnetic layer (FM3) is fixing by anti-ferromagnetism pinning layer (AFM2).
The composition and the performance of the perovskite semimetal composite multilayer membrane of table 2, the modulation of Sr composition
| Embodiment | Semimetal ferromagnetic layer FM1/FM2/FM3 | Insulator barrier layer I1/I2 | Anti-ferromagnetism pinning layer AFM1/AFM2 | Tunneling magnetic resistance ratio/% | |||
| Form | Thickness (nm) | Form | Thickness (nm) | Form | Thickness (nm) | ||
| 13 | La 0.05Sr 0.95MnO 3 | 180 | La 0.99Sr 0.01MnO 3 | 1 | CoO/Cr | 180/200 | 6784 |
| 14 | La 0.67Sr 0.33MnO 3 | 40 | La 0.99Sr 0.01MnO 3 | 180 | Ir-Mn/Cr-Pt | 10/20 | 7847 |
| 15 | La 0.7Sr 0.3MnO 3 | 80 | La 0.99Sr 0.01MnO 3 | 2 | Pt-Mn/NiO | 12/30 | 8731 |
| 16 | La 0.8Sr 0.2MnO 3 | 10 | La 0.99Sr 0.01MnO 3 | 3 | (Co/Cu/Co)/ (Co/Ru/Co) | 10/9 | 7845 |
| 17 | La 0.05Sr 0.95MnO 3 | 30 | La 0.96Sr 0.04MnO 3 | 4 | Cr-Pt/ (Co-Fe/Ru/Co-Fe) | 20/10 | 7859 |
| 18 | La 0.67Sr 0.33MnO 3 | 50 | La 0.96Sr 0.04MnO 3 | 5 | Fe-Mn/Cr-Pt | 20/20 | 8021 |
| 19 | La 0.7Sr O.3MnO 3 | 100 | La 0.96Sr 0.04MnO 3 | 5 | Ir-Mn/CoO | 15/5 | 9013 |
| 20 | La 0.8Sr 0.2MnO 3 | 80 | La 0.96Sr 0.04MnO 3 | 12 | (Co/Ru/Co) /Ir-Mn | 10/12 | 8990 |
| 21 | La 0.05Sr 0.95MnO 3 | 60 | La 0.85Sr 0.15MnO 3 | 15 | (Co/Cu/Co) /Fe-Mn | 10/30 | 7416 |
| 22 | La 0.67Sr 0.33MnO 3 | 30 | La 0.85Sr 0.15MnO 3 | 5 | (Co-Fe/Ru/Co-Fe) /Pt-Mn | 10/20 | 8213 |
| 23 | La 0.7Sr 0.3MnO 3 | 160 | La 0.85Sr 0.15Mn 3 | 20 | CoO/Ir-Mn | 30/15 | 6937 |
| 24 | La 0.8Sr 0.2MnO 3 | 120 | La 0.85Sr 0.15Mn 3 | 6 | NiO/Cr | 80/20 | 7858 |
The operation principles of all composite multi-layer membrane modules is with embodiment 1～12 among the embodiment 13～24, and based on tunneling magnetic resistance (TMR) effect, it is to produce under the transport mechanism of spin correlation tunnelling.For example, for the double potential barrier composite magnetic tunnel junction in the present embodiment 13～24, its effective tunneling magnetic resistance can be used formula TMR=(R
↑ ↓ ↑-R
↑ ↑ ↑)/R
↑ ↑ ↑=2P
2(P
1+ P
3)/[1+P
1P
3-P
2(P
1+ P
3)] represent R wherein
↑ ↑ ↑Resistance when the magnetization direction of three semimetal ferromagnetic layers of expression is parallel to each other, R
↑ ↓ ↑Resistance when representing the intensity of magnetization opposed alignment of the second semimetal ferromagnetic layer.P
1, P
2, P
3The spin polarizability of representing the first semimetal ferromagnetic layer (FM1), the second semimetal ferromagnetic layer (FM2), the 3rd semimetal ferromagnetic layer (FM3) respectively.
Embodiment 25～33
The composition and the performance of the perovskite semimetal composite multilayer membrane of table 3, the modulation of Ca composition
| Embodiment | The semimetal ferromagnetic layer | The insulator barrier layer | The anti-ferromagnetism pinning layer | Tunneling magnetic resistance ratio/% | |||
| Form | Thickness (nm) | Form | Thickness (nm) | Form | Thickness (nm) | ||
| 25 | La 0.8Ca 0.2MnO 3 | 190 | La 0.9Ca 0.1MnO 3 | 180 | CoO | 180 | 7017 |
| 26 | La 0.7Ca 0.3MnO 3 | 10 | La 0.9Ca 0.1MnO 3 | 5 | NiO | 3 | 7943 |
| 27 | La 0.6Ca 0.4MnO 3 | 40 | La 0.9Ca 0.1MnO 3 | 1 | Co/Ru/Co | 9 | 8532 |
| 28 | La 0.8Ca 0.2MnO 3 | 80 | La 0.45Ca 0.55MnO 3 | 2 | Co-Fe/Ru/Co-Fe | 10 | 7119 |
| 29 | La 0.7Ca 0.3MnO 3 | 100 | La 0.45Ca 0.55MnO 3 | 3 | Ir-Mn | 10 | 7420 |
| 30 | La 0.6Ca 0.4MnO 3 | 50 | La 0.45Ca 0.55MnO 3 | 5 | Pt-Mn | 15 | 8045 |
| 31 | La 0.8Ca 0.2MnO 3 | 120 | La 0.1Ca 0.9MnO 3 | 10 | Fe-Mn | 25 | 8541 |
| 32 | La 0.7Ca 0.3MnO 3 | 30 | La 0.1Ca 0.9MnO 3 | 15 | Cr-Pt | 20 | 7314 |
| 33 | La 0.6Ca 0.4MnO 3 | 100 | La 0.1Ca 0.9MnO 3 | 20 | Cr | 30 | 7080 |
Embodiment 34～42
With embodiment 25～33, select the ferromagnetic metal oxide La of Ca composition range in 0.18＜x＜0.5
1-xCa
xMnO
3As semimetal ferromagnetic layer (FM), select the Ca composition range in 0＜y＜0.18 or the La of 0.5＜y＜1.0
1-yCa
yMnO
3As insulator barrier layer (I); And utilize embodiment 1～12 composite multilayer membrane preparation of devices method to prepare compound seven tunics of perovskite semimetal of a series of calcium components of the present invention modulation---have same material composition calcium seven layers of core texture of composite multilayer membrane be AFM1/La
1-xCa
xMnO
3(FM1)/La
1-yCa
yMnO
3(I1)/La
1-xCa
xMnO
3(FM2)/La
1-yCa
yMnO
3(I2)/La
1-xCa
xMnO
3(FM3)/the double potential barrier composite magnetic tunnel junction of AFM2 (wherein 0.18＜x＜0.5,0＜y＜0.18 or 0.5＜y＜1.0).It is formed and performance is listed in table 4.
The composition and the performance of the perovskite semimetal composite multilayer membrane of table 4, the modulation of Ca composition
| Embodiment | The semimetal ferromagnetic layer | The insulator barrier layer | Anti-ferromagnetism pinning layer AFM1/AFM2 | Tunneling magnetic resistance ratio/% | |||
| Form | Thickness (nm) | Form | Thickness (nm) | Form | Thickness (nm) | ||
| 34 | La 0.8Ca 0.2MnO 3 | 180 | La 0.9Ca 0.1MnO 3 | 160 | CoO/Cr | 180/20 | 6469 |
| 35 | La 0.7Ca 0.3MnO 3 | 30 | La 0.9Ca 0.1MnO 3 | 12 | Ir-Mn/Cr-Pt | 12/30 | 7011 |
| 36 | La 0.6Ca 0.4MnO 3 | 50 | La 0.9Ca 0.1MnO 3 | 15 | Pt-Mn/ (Co/Ru/Co) | 10/9 | 6574 |
| 37 | La 0.8Ca 0.2MnO 3 | 80 | La 0.45Ca 0.55MnO 3 | 4 | Fe-Mn/Ir-Mn | 30/10 | 7210 |
| 38 | La 0.7Ca 0.3MnO 3 | 120 | La 0.45Ca 0.55MnO 3 | 8 | NiO/Pt-Mn | 5/15 | 7132 |
| 39 | La 0.6Ca 0.4MnO 3 | 60 | La 0.45Ca 0.55MnO 3 | 5 | (Co-Fe/Ru/Co-Fe) /Fe-Mn | 10/180 | 8483 |
| 40 | La 0.8Ca 0.2MnO 3 | 100 | La 0.1Ca 0.9MnO 3 | 10 | Cr-Pt/(Co/Ru/Co) | 25/9 | 7705 |
| 41 | La 0.7Ca 0.3MnO 3 | 10 | La 0.1Ca 0.9MnO 3 | 10 | Cr/NiO | 20/3 | 7878 |
| 42 | La 0.6Ca 0.4MnO 3 | 100 | La 0.1Ca 0.9MnO 3 | 6 | (Co/Ru/Co) /(Co/Cu/Co) | 9/10 | 8347 |
Embodiment 43～51
The composition and the performance of the perovskite semimetal composite multilayer membrane of table 5, the modulation of Sr composition
| Embodiment | The semimetal ferromagnetic layer | The insulator barrier layer | The anti-ferromagnetism pinning layer | Tunneling magnetic resistance ratio/% | |||
| Form | Thickness (nm) | Form | Thickness (nm) | Form | Thickness (nm) | ||
| 43 | Pr 0.67Sr 0.33MnO 3 | 80 | Pr 0.95Sr 0.05MnO 3 | 5 | Ir-Mn | 10 | 7578 |
| 44 | Pr 0.3Sr 0.7MnO 3 | 50 | Pr 0.95Sr 0.05MnO 3 | 2 | Cr | 30 | 8321 |
| 45 | Pr 0.05Sr 0.95MnO 3 | 10 | Pr 0.95Sr 0.05MnO 3 | 1 | Cr-Pt | 20 | 8279 |
| 46 | Pr 0.67Sr 0.33MnO 3 | 100 | Pr 0.85Sr 0.15MnO 3 | 3 | Pt-Mn | 12 | 8876 |
| 47 | Pr 0.3Sr 0.7MnO 3 | 60 | Pr 0.85Sr 0.15MnO 3 | 6 | Co/Cu/Co | 10 | 8904 |
| 48 | Pr 0.05Sr 0.95MnO 3 | 120 | Pr 0.85Sr 0.15MnO 3 | 15 | Fe-Mn | 30 | 7211 |
| 49 | Pr 0.67Sr 0.33MnO 3 | 80 | Pr 0.75Sr 0.25MnO 3 | 4 | Co/Ru/Co | 100 | 8015 |
| 50 | Pr 0.3Sr 0.7MnO 3 | 30 | Pr 0.75Sr 0.25MnO 3 | 10 | CoO | 190 | 7568 |
| 51 | Pr 0.05Sr 0.95MnO 3 | 180 | Pr 0.75Sr 0.25MnO 3 | 180 | NiO | 5 | 7005 |
Embodiment 52～60
With embodiment 43～51, select the ferromagnetic metal oxide Pr of Sr composition range in 0.3＜x＜1.0
1-xSr
xMnO
3As semimetal ferromagnetic layer (FM), select the Pr of Sr composition range in 0＜y＜0.3
1-ySr
yMnO
3As insulator barrier layer (I); And utilize embodiment 1～12 composite multilayer membrane preparation of devices method prepare a series of strontium compositions of the present invention modulation compound seven tunics of perovskite semimetal---seven layers of core texture with composite multilayer membrane of same material composition strontium are AFM1/Pr
1-xSr
xMnO
3(FM1)/Pr
1-ySr
yMnO
3(I1)/Pr
1-xSr
xMnO
3(FM2)/Pr
1-ySr
yMnO
3(I2)/Pr
1-xSr
xMnO
3(FM3)/the double potential barrier composite magnetic tunnel junction of AFM2 (wherein 0.3＜x＜1.0,0＜y＜0.3).It is formed and performance is listed in table 6.
The composition and the performance of the perovskite semimetal composite multilayer membrane of table 6, the modulation of Sr composition
| Embodiment | The semimetal ferromagnetic layer | The insulator barrier layer | Anti-ferromagnetism pinning layer AFM1/AFM2 | Tunneling magnetic resistance ratio/% | |||
| Form | Thickness (nm) | Form | Thickness (nm) | Form | Thickness (nm) | ||
| 52 | Pr 0.67Sr 0.33MnO 3 | 10 | Pr 0.95Sr 0.05MnO 3 | 200 | CoO/Cr-Pt | 180/20 | 7007 |
| 53 | Pr 0.3Sr 0.7MnO 3 | 100 | Pr 0.95Sr 0.05MnO 3 | 5 | (Co/Ru/Co) /Pt-Mn | 8/20 | 7764 |
| 54 | Pr 0.05Sr 0.95MnO 3 | 80 | Pr 0.95Sr 0.05MnO 3 | 1 | Cr/Fe-Mn | 20/30 | 7475 |
| 55 | Pr 0.67Sr 0.33MnO 3 | 150 | Pr 0.85Sr 0.15MnO 3 | 4 | NiO/ (Co-Fe/Ru/Co-Fe) | 100/10 | 8190 |
| 56 | Pr 0.3Sr 0.7MnO 3 | 50 | Pr 0.85Sr 0.15MnO 3 | 10 | (Co/Cu/Co) /Ir-Mn | 10/12 | 7437 |
| 57 | Pr 0.05Sr 0.95MnO 3 | 120 | Pr 0.85Sr 0.15MnO 3 | 2 | Cr-Pt/CoO | 20/10 | 8890 |
| 58 | Pr 0.67Sr 0.33MnO 3 | 30 | Pr 0.75Sr 0.25MnO 3 | 15 | Pt-Mn /(Co/Ru/Co) | 12/190 | 7738 |
| 59 | Pr 0.3Sr 0.7MnO 3 | 60 | Pr 0.75Sr 0.25MnO 3 | 8 | Ir-Mn/Cr | 15/30 | 8896 |
| 60 | Pr 0.05Sr 0.95MnO 3 | 200 | Pr 0.75Sr 0.25MnO 3 | 6 | NiO/Fe-Mn | 50/30 | 8207 |
As can be seen from the above-described embodiment, the perovskite semimetal composite multilayer membrane of composition modulation provided by the invention is owing to have excellent lattice matching between its adjacent materials layer, minimum interfacial stress, interface layer structure etc. preferably, even the effect that diffusion also can only produce compression or attenuate barrier layer takes place in a small amount of modulation (doping) atom at the interface, can not destroy the insulating properties of barrier layer, can not reduce the spin polarizability on semimetal ferromagnetic layer surface, barrier layer both sides yet, thereby guarantee to obtain high-quality barrier layer and potential barrier interface, fully realize the semimetal ferromagnetism of perovskite oxide, anti-ferromagnetism, insulating properties, physical characteristics such as paramagnetic properties make that its tunneling magnetic resistance ratio is very high.Thereby adopting the device of this composite multi-layer membrane structure, the performance of its device will inevitably have broad application prospects to significantly improve.
Claims (11)
1, a kind of perovskite semimetal composite multilayer membrane of composition modulation, its core texture is first semimetal ferromagnetic layer/insulator barrier layer/second semimetal ferromagnetic layer/anti-ferromagnetism pinning layer, or anti-ferromagnetism pinning layer/first semimetal ferromagnetic layer/insulator barrier layer/second semimetal ferromagnetic layer.
2, the perovskite semimetal composite multilayer membrane of composition modulation as claimed in claim 1, it is characterized in that: described semimetal ferromagnetic layer and insulator barrier layer are the perovskite sull; Described anti-ferromagnetism pinning layer is anti-ferromagnetism metal and alloy or the artificial pinning material of anti-ferromagnetism; The thickness of described semimetal ferromagnetic layer, insulator barrier layer, anti-ferromagnetism pinning layer is 0.1～200nm.
3, the perovskite semimetal composite multilayer membrane of composition modulation as claimed in claim 2, it is characterized in that: described anti-ferromagnetism metal and alloy thereof comprise Cr, Ir-Mn, Pt-Mn, Fe-Mn, Cr-Pt, CoO, NiO, Co/Ru/Co, Co-Fe/Ru/Co-Fe, Co/Cu/Co or anti-ferromagnetism perovskite rare earth manganese oxide.
4, the perovskite semimetal composite multilayer membrane of composition modulation as claimed in claim 2, it is characterized in that: described perovskite oxide is A
1-xB
xMO
3The type oxide; A is selected from atomic number 57 to 71 elements one or more, and B is selected from alkali metal or the alkaline-earth metal one or more; M is for being selected from atomic number 22～30, one or more in 40～51 and 73～80 elements.
5, as the perovskite semimetal composite multilayer membrane of claim 2 or 4 described composition modulation, it is characterized in that: the perovskite oxide of described semimetal ferromagnetic layer is La
1-xSr
xMnO
3, 0.16＜x＜1.0 wherein; Or La
1-xCa
xMnO
3, 0.18＜x＜0.5 wherein; Or Pr
1-xSr
xMnO
3, 0.3＜x＜1.0 wherein;
Accordingly, the perovskite oxide that described insulator barrier layer is a same material, it is La
1-ySr
yMnO
3, 0＜y＜0.16 wherein; Or La
1-yCa
yMnO
3, 0＜y＜0.18 or 0.5＜y＜1.0 wherein; Or Pr
1-ySr
yMnO
3, 0＜y＜0.3 wherein.
6, a kind of perovskite semimetal composite multilayer membrane of composition modulation, its core texture is the first anti-ferromagnetism pinning layer/first semimetal ferromagnetic layer/first insulator barrier layer/second semimetal ferromagnetic layer/second insulator barrier layer/the 3rd semimetal ferromagnetic layer/second anti-ferromagnetism pinning layer.
7, the perovskite semimetal composite multilayer membrane of composition modulation as claimed in claim 6, it is characterized in that: described semimetal ferromagnetic layer and insulator barrier layer are the perovskite sull; Described anti-ferromagnetism pinning layer is anti-ferromagnetism metal and alloy or the artificial pinning material of anti-ferromagnetism; The thickness of described semimetal ferromagnetic layer, insulator barrier layer, anti-ferromagnetism pinning layer is 0.1～200nm.
8, the perovskite semimetal composite multilayer membrane of composition modulation as claimed in claim 7, it is characterized in that: described anti-ferromagnetism metal and alloy thereof comprise Cr, Ir-Mn, Pt-Mn, Fe-Mn, Cr-Pt, CoO, NiO, Co/Ru/Co, Co-Fe/Ru/Co-Fe, Co/Cu/Co or anti-ferromagnetism perovskite rare earth manganese oxide.
9, the perovskite semimetal composite multilayer membrane of composition modulation as claimed in claim 7, it is characterized in that: described perovskite oxide is A
1-xB
xMO
3The type oxide; A is selected from atomic number 57 to 71 elements one or more, and B is selected from alkali metal or the alkaline-earth metal one or more; M is for being selected from atomic number 22～30, one or more in 40～51 and 73～80 elements.
10, as the perovskite semimetal composite multilayer membrane of claim 7 or 9 described composition modulation, it is characterized in that: the perovskite oxide of described semimetal ferromagnetic layer is La
1-xSr
xMnO
3, 0.16＜x＜1.0 wherein; Or La
1-xCa
xMnO
3, 0.18＜x＜0.5 wherein; Or Pr
1-xSr
xMnO
3, 0.3＜x＜1.0 wherein;
Accordingly, the perovskite oxide that described insulator barrier layer is a same material, it is La
1-ySr
yMnO
3, 0＜y＜0.16 wherein; Or La
1-yCa
yMnO
3, 0＜y＜0.18 or 0.5＜y＜1.0 wherein; Or Pr
1-ySr
yMnO
3, 0＜y＜0.3 wherein.
11, the application of the perovskite semimetal composite multilayer membrane of a kind of claim 1 or 6 described composition modulation, it can be used for highly sensitive magnetosensitive, electricity quick, photosensitive and gas sensor, magnetic RAM memory cell and other spintronics device.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101315948B (en) * | 2007-05-29 | 2010-05-26 | 中国科学院物理研究所 | Spinning transistor |
| CN103834992A (en) * | 2014-03-04 | 2014-06-04 | 中国科学技术大学 | CaRuO3/La2/3Ca1/3MnO3/CaRuO3 epitaxial thin film with sandwich structure as well as preparation method and application thereof |
| CN104004988A (en) * | 2013-02-26 | 2014-08-27 | 中国科学院金属研究所 | La0.7Sr0.3MnO3-NiO nanocomposite film material and preparation method thereof |
| CN105172255A (en) * | 2015-07-17 | 2015-12-23 | 中国科学技术大学 | Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1184702C (en) * | 1998-12-04 | 2005-01-12 | 中国科学院上海冶金研究所 | Oxide giant magnet resistance film, its prepn. method and use |
| CN1324720C (en) * | 2001-09-20 | 2007-07-04 | 北京有色金属研究总院 | Perovskite rare earth manganese oxide giant magnetic resistance material, preparing process and its use |
| CN1248325C (en) * | 2002-05-16 | 2006-03-29 | 中国科学院物理研究所 | Tunnel effect magneto-resistance device and preparing method |
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2005
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101315948B (en) * | 2007-05-29 | 2010-05-26 | 中国科学院物理研究所 | Spinning transistor |
| CN104004988A (en) * | 2013-02-26 | 2014-08-27 | 中国科学院金属研究所 | La0.7Sr0.3MnO3-NiO nanocomposite film material and preparation method thereof |
| CN103834992A (en) * | 2014-03-04 | 2014-06-04 | 中国科学技术大学 | CaRuO3/La2/3Ca1/3MnO3/CaRuO3 epitaxial thin film with sandwich structure as well as preparation method and application thereof |
| CN105172255A (en) * | 2015-07-17 | 2015-12-23 | 中国科学技术大学 | Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof |
| CN105172255B (en) * | 2015-07-17 | 2017-04-12 | 中国科学技术大学 | Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof |
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