CN1822354A - Method for forming solid cooling structure and its integrated with package element - Google Patents
Method for forming solid cooling structure and its integrated with package element Download PDFInfo
- Publication number
- CN1822354A CN1822354A CN 200510050905 CN200510050905A CN1822354A CN 1822354 A CN1822354 A CN 1822354A CN 200510050905 CN200510050905 CN 200510050905 CN 200510050905 A CN200510050905 A CN 200510050905A CN 1822354 A CN1822354 A CN 1822354A
- Authority
- CN
- China
- Prior art keywords
- cooling structure
- solid state
- passive cooling
- thermo
- conversion module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 186
- 239000007787 solid Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 230000017525 heat dissipation Effects 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 230000005619 thermoelectricity Effects 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 8
- 230000010354 integration Effects 0.000 claims 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 14
- 239000006071 cream Substances 0.000 description 13
- 238000013461 design Methods 0.000 description 11
- 238000004806 packaging method and process Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910001215 Te alloy Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 241000761557 Lamina Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000005068 transpiration Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Present invention relates to solid state cooling structure and method integrating to package element, used in chip package structure. It contains a thermoelectric conversion module and a heat exchange module, wherein said heat exchange module containing two passive cooling structures respectively thermally connecting and fixing thermoelectric conversion module, one passive cooling structure nearing chip, when one power supply used in thermoelectric conversion module, the chip generated heat conducted to another passive cooling structure through neared passive cooling structure and thermoelectric conversion module.
Description
Technical field
The present invention is relevant for a kind of solid state cooling structure, formation method and its application, particularly relevant for a kind of combination active and passive solid state cooling structure, formation method and its application.
Background technology
Along with electronic product element fast towards high-density development, how with electronic component for example the heat energy that produces of CPU, LD, power crystal get rid of so that the circuit normal operation has become very important important topic rapidly.Solid-state cooling element (solid state cooling device) has easy to use and every advantage such as low cost, therefore becomes one of heat dissipation element commonly used.
General solid-state cooling element can be divided into passive cooling (passive cooling) and initiatively cool off (active cooling) mode.Adopt the element of the passive type of cooling, heat-conducting plate (heatspreader) for example is higher than the function that ambient temperature time side provides heat radiation in itself temperature.Opposite, adopt the element of active cooling method, refrigerator (thermal electric cooler) for example, the function of heat radiation when being lower than ambient temperature, itself temperature also is provided, and have pollution-free, noiselessness, installation easily and the characteristic of small and light, therefore be subjected to electronic component, the particularly favor of IC potted element deeply.
For instance, for example in the required cooling system of IC encapsulating structure, generally adopt commercially available thermoelectric material collocation radiator with set specification and shape.Yet along with the variation of IC encapsulating structure, independently thermoelectric material or radiator element become the IC encapsulating structure and select one of restriction of cooling system for use.Secondly, the assembling between each heat dissipation element and the IC encapsulating structure also is to select one of considering of cooling system for use with whole the use.For instance, the mechanical strength of general thermoelectric material is quite fragile, and it is fixed with radiator or IC encapsulating structure or is vulnerable to impact and breakage when using.Moreover the dissimilar materials interface between thermoelectric material, radiator element and the IC encapsulating structure has bigger thermal resistance, when existing the more or during the dissimilar materials interface of healing big, also can making the usefulness of cooling system have a greatly reduced quality.In addition, when independently thermoelectric material and radiator element were assembled to the IC encapsulating structure, can't dwindle whole volume effectively also was undisputable fact.
Summary of the invention
Based on existing problems in the prior art, in order to solve the heat dissipation problem that the dissimilar materials interface is caused, provide the formation method of a kind of solid state cooling structure and its integrated with package element in this, the present invention includes in conjunction with active and passive solid state cooling structure, formation method and its application, directly be formed at the active cooling structure on the passive cooling structure or be bonded in the process that forms passive cooling structure, so can reduce the dissimilar materials interface exists or its scope caused the heat radiation or the problem of conduction heat energy.
For effective usefulness that reduces the volume of electronic component and take into account heat radiation simultaneously, provide a kind of in this in conjunction with active and passive solid state cooling structure, formation method and its application, when using, directly be formed at single electronic element for example on the IC encapsulating structure, assembling that need not be extra or fixed structure so can reduce the overall volume of electronic component.
According to above-mentioned purpose, among the embodiment who implements based on the present invention's spirit, a kind of solid state cooling structure is applied on the thermal source, and it comprises a thermoelectricity (thermoelectric) modular converter and a heat exchange module.Heat exchange module comprises one first passive cooling structure and one second passive cooling structure hot link (thermally connecting) and fixing thermo-electric conversion module respectively, and the first passive cooling structure is close to thermal source.Wherein, when an application of power during in thermo-electric conversion module, the heat that thermal source produced is sent to the second passive cooling structure through the first passive cooling structure and thermo-electric conversion module.So solid state cooling structure formation method provides one first passive cooling structure and a plurality of first to stick together structure to be positioned on one of the first passive cooling structure first surface.Secondly, dispose a plurality of thermoelectric transformational structures on first surface, wherein each thermoelectric transformational structure corresponding each first stick together structure.In addition, providing one second passive cooling structure and a plurality of second to stick together structure is positioned on one of the second passive cooling structure second surface.Stick together each thermoelectric transformational structure and each second and stick together structure to form solid state cooling structure.
According to above-mentioned purpose, when an embodiment who implements based on the present invention's spirit uses, integrate the method for solid state cooling structure and encapsulating structure, one first passive cooling structure and a plurality of first sticks together structure and is positioned on one of the first passive cooling structure first surface.A plurality of thermoelectricity (thermoelectric) transformational structure is disposed on the first surface, wherein each thermoelectric transformational structure corresponding each first stick together structure.One second passive cooling structure and a plurality of second sticks together structure and is positioned on one of the second passive cooling structure second surface.Moreover the second passive cooling structure is fixed on the encapsulating structure and each thermoelectric transformational structure second is sticked together structure and sticked together mutually with each.
Description of drawings
Many viewpoints of the present invention can more clearly be understood with reference to following accompanying drawing.Relevant drawings is not drawn to scale, and its effect is only in the relevant theorem of clear performance the present invention.In addition, use numeral to represent corresponding part in the icon.
Figure 1 shows that according to an active cooling structure side schematic view that is used in the embodiment of the invention.
Figure 2 shows that according to a solid state cooling structure side schematic view that is used in the embodiment of the invention.
Fig. 3 A is for one solid state cooling structure embodiment is applied to the generalized section of wire bonding and packaging structure according to the present invention.
Fig. 3 B is for one solid state cooling structure embodiment is applied to heat dissipation type high (chamber, cave is downward, cavity-down) generalized section of encapsulating structure according to the present invention.
Fig. 3 C is for one solid state cooling structure embodiment is applied to the generalized section of lead frame type (lead-frame) encapsulating structure according to the present invention.
Fig. 3 D is for one solid state cooling structure embodiment is applied to the generalized section of how chip-shaped (multi-chip) encapsulating structure according to the present invention.
Fig. 4 A figure to Fig. 4 D is the generalized section that is integrated in wire bonding and packaging structure when one solid state cooling structure embodiment makes according to the present invention.
Fig. 5 A figure to Fig. 5 D is for another solid state cooling structure embodiment makes the generalized section of integrating wire bonding and packaging structure again according to the present invention.
Fig. 6 is the generalized section of the passive cooling structure that embodiment provided one of according to the present invention.
Symbol description among the figure:
8 conduction articulamentums
9 tin cream adhesion layers
10 active cooling structures
11a, the 11b thermoelectric material
12 conductive connecting materials
12a, the 12b conductive connecting material
20 solid state cooling structures
22a, the passive cooling structure of 22b
23 radiating fins
24 backboards
25 structures
30 thermals source
32 circuit boards
33 conductive structures
34 capsulation materials
35 conductor wires
Pin in 36
40 substrates
40a, the 40b surface
42 interconnect structures
44 tin creams
45 heat insulating laminas
47 interconnect structures
49 tin creams
50 encapsulating structures
51 insulating barriers
52 capsulation materials
Embodiment
Some embodiments of the present invention can be described in detail as follows.Yet except describing in detail, the present invention can also be widely implements at other embodiment, and scope of the present invention do not limited, its with after claim be as the criterion.Moreover for clearer description being provided and being more readily understood the present invention, each several part is not drawn according to its relative size in the accompanying drawing, and some size is compared with other scale dependent and exaggerated; Incoherent detail section is not drawn fully yet, succinct in the hope of accompanying drawing.
Figure 1 shows that an active cooling structure side schematic view that is used among the embodiment according to the present invention.Be noted that, to come across repeatedly in other follow-up accompanying drawing in active cooling structure 10 shown in Figure 1, for simplifying in order to for the purpose of the explanation of other structure, the active cooling structure 10 that shows in follow-up other accompanying drawing is no longer numerous stating and depicted in greater detail, but shown in fact active cooling structure 10 its structures in institute's drawings attached are equal among Fig. 1.
With reference to Fig. 1, active cooling structure 10, a thermo-electric conversion module for example, mainly comprise thermoelectric material 11a, 11b (thermal electric element) and conductive connecting material 12a, 12b and 12 (junction element) and be positioned at thermoelectric material 11a, 11b terminal (ends), wherein conductive connecting material 12a is positioned at one of thermoelectric material 11a end, conductive connecting material 12b is positioned at one of 11b end, conductive connecting material 12a is positioned at the same side but does not have with 12b and is connected, and conductive connecting material 12 then is positioned at and connects the other end of thermoelectric material 11a and 11b.Generally speaking, conductive connecting material 12a is connected with the out-put supply (electrical power output) or the input power supply (electrical power input) 14 of an outside with 12b.On the other hand, each conductive connecting material 12a or 12b are connected with the thermoelectric material 11b of another active cooling structure 10 or the end of 11a.That is to say that conductive connecting material 12a or 12b are shared by adjacent active cooling structure 10.Moreover conductive connecting material 12,12a or 12b are approximately perpendicular to thermoelectric material 11a and 11b.
In an embodiment, each thermoelectric material 11a and the 11b thermocouple (thermoelectric couple) that partners, can utilize the material of different conductivity to constitute, for example thermoelectric material 11a constitutes so that electric hole (electrical holes) to be provided with P type bismuth tellurium alloy (bismuth/telluric) semi-conducting material, thermoelectric material 11b constitutes so that electronics to be provided with a N type bismuth tellurium alloy semi-conducting material, yet is not limited to this.Moreover, conductive connecting material 12a, 12b and 12, for example formed by a conduction articulamentum 8 and a tin cream adhesion layer 9, can be used as the electrode of thermoelectric material 11a and 11b and stick together thermoelectric material 11a and 11b, see through conductive connecting material 12a, 12b and is connected, make thermoelectric material 11a and 11b one connect (electricallyin series) on electrical but the relation of parallel connection (thermally in parallel) on hot with 12 outside.
Figure 2 shows that according to a solid state cooling structure side schematic view that is used in the embodiment of the invention.Solid state cooling structure 20 comprises heat exchange module, for example two passive cooling structure 22a, 22b almost parallel and one or more initiatively cooling structure 10 and be disposed between passive cooling structure 22a and the 22b, the zone system of the contiguous initiatively cooling structure 10 of wherein passive cooling structure 22a or 22b provide carrying initiatively cooling structure 10 usefulness and with active cooling structure 10 for being electrically insulated.In an embodiment, passive cooling structure 22a and 22b all make with materials with excellent heat conductivity, and it also can have conductivity concurrently, for example general heat conductivity good metal copper, aluminium or alloyed copper, aluminium.Moreover the interface that passive cooling structure 22a or 22b are connected with active cooling structure 10 can be electrically insulated through being treated as.Differ from the solid-state cooling element of tradition as refrigerator, the present invention's spirit provides active cooling structure 10 is incorporated on passive cooling structure 22a and the 22b, give up the ceramic substrate in traditional refrigerator, the thermal resistance that existence caused that helps to reduce the dissimilar materials interface increases.In addition, the thermal conductance that the metal or alloy material is provided for main passive cooling structure 22a and 22b is better than the ceramic substrate in traditional refrigerator, and therefore the effect of enhancement is arranged for heat radiation.
Be noted that, even passive cooling structure 22a or 22b are electrically insulated through being treated as with the interface that active cooling structure 10 is connected, it may form the thin layer that is electrically insulated, but thin layer is only as the usefulness that is electrically insulated because this is electrically insulated, need not be as giving up need the hold concurrently usefulness of negative carrying of ceramic substrate in traditional refrigerator, therefore the thickness of thin layer of being electrically insulated is extremely thin, the thermal resistance that may cause very little.
In an embodiment, passive cooling structure 22a, for example the radiating fin 23 (fin) of plurality of parallel is isolated from each other but the bottom links to each other with backboard 24, the one side is connected with 10 contacts of active cooling structure, can be used as a radiator (heat sink) usefulness, from active cooling structure 10, take out heat (draw) and then thermal transpiration is gone out from the opposite side of passive cooling structure 22a.Moreover radiating fin 23 can be the shape that is fit to arbitrarily, for example flat board, cylinder or cube rod or the like.In addition, the spacing of two adjacent radiating fins 23 can be identical or different, and the quantity of radiating fin 23 and length also viewable design are required and decide.
Moreover, passive cooling structure 22b, for example a heat-conducting plate (heat spreader), the one side is connected with 10 contacts of active cooling structure, opposite side is then contiguous with a thermal source (heat source), the heat that produces when operating in order to receive thermal source, and conduction heat is given initiatively cooling structure 10.Similar to passive cooling structure 22a, passive cooling structure 22b can be the shape that is fit to arbitrarily, and is for example circular, square or the like, and quantity and size also viewable design are required and decide.Spirit according to the present invention, in conjunction with passive cooling structure 22a, the solid state cooling structure 20 of 22b and active cooling structure 10, the quantity of each element wherein, size, configuration all can be decided according to design, particularly according to the design of encapsulating structure, therefore, be different from tradition and after encapsulating structure is finished, consider heat dissipating method again, the present invention's the embodiment that spirit realized directly is made in electrothermal module the fin below, and needn't install thermoelectric material in addition additional on the element and below the fin, directly and rapidly leave at the heat that chip produced, can reduce thermal resistance and reduced volume, and then provide a kind of efficient, low-cost, low complex degree, make and be easy to radiation design method.
Fig. 3 A to Fig. 3 D is applied to the generalized section of general encapsulating structure for a solid state cooling structure embodiment according to the present invention.Be noted that the encapsulating structure that the spirit according to the present invention is implemented is not limited to following pattern, other is dual inline type for example
Encapsulation(Dual In-LinePackage, DIP), flat
Encapsulation(Flat Package, FP), grid array
Encapsulation(Pin GridArray, PGA), (Ball Grid Array BGA) also waits and is suitable for ball grid array package.Especially when these a little embodiment describe with one chip, can further spread to the multi-chip stack realized with conventional method or the encapsulating structure of arrangement.
With reference to Fig. 3 A is the generalized section that one solid state cooling structure embodiment is applied to wire bonding and packaging structure according to the present invention.Thermal source 30, for example the chip in the running is fixed on the circuit board 32, and utilizes conductor wire 35 to connect one of thermal source 30 and circuit board 32 lip-deep conductive pad (not showing on the figure) so that thermal source 30 electrically connects with circuit board 32 generations.Circuit board 32 still has some conductive structures 33, tin ball for example, and another surface that is disposed at circuit board 32 electrically connects to form with the external world.The solid state cooling structure 20 that the present invention's spirit is implemented is covered on the thermal source 30.Utilize suitable method, for example utilize capsulation material 34 (moldingcompound), the 22b that is covered in solid state cooling structure 20 goes up with fixing solid state cooling structure 20.So solid state cooling structure 20 is applied to wire bonding and packaging structure, is beneficial to the heat dissipation design of whole wire bonding and packaging structure, and in conjunction with the time can reach better heat radiating effect.
(chamber, cave is downward, cavity-down) generalized section of encapsulating structure for a solid state cooling structure embodiment according to the present invention is applied to heat dissipation type high with reference to Fig. 3 B.Circuit board 32 has chamber, a cave can ccontaining thermal source 30.Utilize conductor wire 35 connect thermals source 30 with one of circuit board 32 lip-deep conductive pad (not showing on the figure) so that thermal source 30 produces with circuit board 32 electrically connects, and utilize capsulation material 34 to fill up the chamber, cave and cover thermal source 30 and conductive structure 33.Circuit board 32 still has some conductive structures 33 and also is disposed at the surface of circuit board 32 upward to form electric connection with the external world.The solid state cooling structure 20 that the present invention's spirit is implemented is with suitable method, adhesion layer for example, and go up and contact thermal source 30 on another surface of being fixed in circuit board 32.So solid state cooling structure 20 is applied to the heat dissipation type high encapsulating structure, is beneficial to the heat dissipation design of whole heat dissipation type high encapsulating structure, and in conjunction with the time can reach better heat radiating effect.
With reference to Fig. 3 C for solid state cooling structure embodiment is applied to the generalized section of lead frame type (lead-frame) encapsulating structure one of according to the present invention.Thermal source 30 utilizes a surface with suitable method, and for example the adhesion layer that is electrically insulated of heat conduction is fixed on the 22b of solid state cooling structure 20.Utilize another lip-deep conductive pad (not showing on the figure) that conductor wire 35 connects thermals source 30 to the interior pin 36 of lead frame so that thermal source 30 produces with lead frame electrically connects.Utilize capsulation material 34 to be coated on thermal source 30, conductive structure 33, partially conductive line 35 with around the 22b.So solid state cooling structure 20 is applied to lead frame type encapsulating structure, is beneficial to the heat dissipation design of whole lead frame type encapsulating structure, and in conjunction with the time can reach better heat radiating effect.
With reference to Fig. 3 D for solid state cooling structure embodiment is applied to the generalized section of how chip-shaped (multi-chip) encapsulating structure one of according to the present invention.With lead frame type encapsulating structure among Fig. 3 C is the unit, and plurality of leadframe is further, for example utilizes the method for welding, electrically connects and is fixed on the circuit board 32.Moreover the size of solid state cooling structure 20 passive cooling structure 22a can be designed to contain simultaneously plurality of leadframe type encapsulating structure, and extends to and be fixed on the circuit board 32.So solid state cooling structure 20 is applied to how chip-shaped encapsulating structure, is beneficial to the heat dissipation design of whole how chip-shaped encapsulating structure, and in conjunction with the time can reach better heat radiating effect.
According to above-mentioned, the solid state cooling structure 20 that the present invention's spirit is implemented, it can be integrated in the heat dissipation design of encapsulating structure, applicable to one chip, multicore sheet or wafer.So the solid state cooling structure 20 that the present invention's spirit is implemented also is applicable on the wafer level packaging structure.Understandable, the design of shape, size and number of the passive cooling structure 22a of each of solid state cooling structure 20,22b and active cooling structure 10 or the like can be according to the required adjustment of encapsulating structure, therefore can effectively solve the problem of traditional focus of encapsulating structure, and dwindle the space of integral member.
Fig. 4 A to Fig. 4 D is integrated in the generalized section of wire bonding and packaging structure when solid state cooling structure embodiment makes one of according to the present invention.Scrutablely be, though present embodiment is example with the wire bonding and packaging structure, yet, shown in Fig. 3 A to Fig. 3 D, be not limited to above-mentionedly, the solid state cooling structure that the present invention's spirit is implemented is can be suitable in the various encapsulating structures and be integrated into an integral member.In addition, one chip shown in these a little embodiment and solid state cooling structure can be to carry out the one chip chip solid state cooling structure in when encapsulation, or in wafer scale (wafer level) processing procedure the not unit chip and the solid state cooling structure of cutting.Moreover these a little embodiment do not show the initiatively circuit of cooling structure of control, but in actual processing procedure, can utilize general method to finish the initiatively control of cooling structure.
With reference to Fig. 4 A, provide a substrate 40 with usefulness as follow-up formation radiating fin 23 and backboard 24.In an embodiment, substrate 40 is having the material of thermal conductive resin, and for example metallic copper, aluminium or alloyed copper, aluminium or silicon form, and it has two apparent surface 40a and 40b.Moreover substrate 40 can also be any suitable shape or size, and is for example close with a wafer size circular or close with a chip size square.Secondly, go up priority in the surperficial 40a of substrate 40 and form a heat insulating lamina 45 and interior articulamentum (not showing on the figure), for example a metal level.The interior articulamentum that removes part is disposed on the surperficial 40a to form interconnect structure 42.In a suitable manner, the mode of wire mark for example is disposed on each interconnect structure 42 tin cream 44 to stick together fixing usefulness as follow-up.Be noted that interconnect structure 42 and tin cream 44 promptly form conductive connecting material 12 in the present embodiment (or 12a, 12b).In another embodiment, also can on surperficial 40a, carry out appropriate steps such as lithography, remove substrate 40 partly to form some radiating fins 23.The radiating fin 23 that forms on surperficial 40a also can be in order to the usefulness of fixedly sticking together, as the shape of passive cooling structure 22a required among Fig. 3 D except heat sinking function is provided.
Moreover heat insulating lamina 45 can utilize the mode of sintering to form.Can select, also can utilize the mode of plating to form heat insulating lamina 45.Because the thickness of heat insulating lamina 45 is extremely thin, so its issuable thermal resistance is very little.
With reference to Fig. 4 B, on another surperficial 40b of substrate 40, carry out appropriate steps such as lithography, remove substrate 40 partly, for example utilize modes such as micro electronmechanical processing, semiconductor machining or precision optical machinery processing to form some radiating fins that are isolated from each other 23.The remaining substrate 40 that connects radiating fin 23 bottoms is backboard 24.On the other hand, with element thermoelectric material 11a, the 11b of active cooling structure 10, by rights, for example modes such as sputter, evaporation or plating are disposed on the tin cream 44.Secondly, initiatively the arrangement mode of cooling structure 10 on backboard 24 can be alternating expression, vertical or other arrangement mode that is fit to.Afterwards, utilize reflow tin cream 44 to stick together fixingly, so finish the part-structure 25 of solid state cooling structure 20 to reach.
On the other hand, with reference to Fig. 4 C, provide an encapsulating structure 50, wherein passive cooling structure 22b fixes and is contained in the encapsulating structure 50.Similar in appearance to Fig. 4 A, on the surperficial 46a of one of passive cooling structure 22b, form heat insulating lamina 51 and interior articulamentum (not showing on the figure), for example a metal level in regular turn.The interior articulamentum that removes part is disposed on the surperficial 46a to form interconnect structure 47.Secondly, by rights, for example Yin Shua mode is disposed at tin cream 49 on each interconnect structure 47.Moreover interconnect structure interconnect structure 47 roughly is positioned on the thermal source 30 path of hot-fluid when shortening operation.
With reference to Fig. 4 D, encapsulating structure 50 among the installation diagram 4C and the structure 25 among Fig. 4 B.Active cooling structure 10 in the structure 25 is disposed on the tin cream 49 of encapsulating structure 50, for example utilizes the brilliant mode of covering.Understandable, on another surface of circuit board 32, can utilize suitable mode, for example plant the mode of ball, dispose some conductive structures 33, carry out reflow afterwards and handle to fix and to stick together encapsulating structure 50 and structure 25.According to above-mentioned, the solid state cooling structure that the present invention's spirit is implemented can be included its componentry in original encapsulating structure when making, and fixes with other combination of elements again.The combination of solid state cooling structure need not traditional mechanical system fixedly the time or other structure is fixed, and so reduces issuable thermal resistance and hot issue.
Comprise the potted element of cooling structure except forming, again total is combined with encapsulating structure after the solid state cooling structure that the present invention's spirit is implemented also may be separately formed according to above-mentioned steps.Fig. 5 A to Fig. 5 D makes the generalized section of integrating wire bonding and packaging structure again for another solid state cooling structure embodiment according to the present invention.With last embodiment difference, with reference to Fig. 5 A, the active cooling structure 10 of present embodiment is to be disposed at a passive cooling structure 22b who is not integrated into as yet in the encapsulating structure.Similarly, form insulating barrier 51, interconnect structure 47 and tin cream 49 (both form conductive connecting material 12,12a or 12b) in regular turn on the surperficial 46a of passive cooling structure 22b in aforementioned suitable mode.Afterwards, utilize the initiatively suitable mode of cooling structure 10 of aforementioned arrangements, initiatively the arrangements of components of cooling structure 10 is handled fixing on tin cream 49 again through reflow.Moreover, can select, the passive cooling structure 22b in the present embodiment also can offer in the step of subsequent configuration active cooling structure 10, as shown in Figure 6 earlier with after a plastic packaging framework 52 (molding frame) combines again.
With reference to Fig. 5 B, similar to last embodiment in the making of passive cooling structure 22a, but on tin cream 44, do not dispose initiatively cooling structure 10.Afterwards, the element of Fig. 5 A and Fig. 5 B is assembled up, for example utilizes reflow that it is fixed, again with circuit board 32 on thermal source 30 integrate, shown in Fig. 5 C.Afterwards, utilize capsulation material 34 solid state cooling structure to be fixed and is attached on the circuit board 32, shown in Fig. 5 D.
It is emphasized that the above only is preferred embodiment of the present invention, is not in order to limit the present invention's request patent right; Simultaneously above description should be understood and be implemented for the special personage who knows the present technique field, so other does not break away from equivalence change or the modification of being finished under the spirit that the present invention discloses, and all should be included in the described right request scope.
Claims (20)
1. solid state cooling structure is applied to it is characterized in that on the thermal source that this solid state cooling structure comprises:
One thermo-electric conversion module; And
One heat exchange module, this heat exchange module comprise the hot link and fix this thermo-electric conversion module, the contiguous thermal source of this first passive cooling structure respectively of one first passive cooling structure and one second passive cooling structure;
Wherein, when an application of power during in this thermo-electric conversion module, the heat that thermal source produced is sent to this second passive cooling structure through this first passive cooling structure and this thermo-electric conversion module.
2. solid state cooling structure as claimed in claim 1, it is characterized in that, this thermo-electric conversion module comprises a plurality of thermoelectric materials and is connected material with plural conductive, and wherein this plural conductive of part connects material in order to connect wantonly two adjacent these thermoelectric materials and to be connected with this power supply.
3. solid state cooling structure as claimed in claim 2 is characterized in that, those thermoelectric materials comprise N type semiconductor material and P type semiconductor material.
4. solid state cooling structure as claimed in claim 1 is characterized in that, this first passive cooling structure comprises an electric insulation part and a thermal conduction portions, and wherein this electric insulation part is between this thermo-electric conversion module and this thermal conduction portions.
5. solid state cooling structure as claimed in claim 4 is characterized in that, this electric insulation part forms in modes such as metal material surface plating or sintering.
6. solid state cooling structure as claimed in claim 1 is characterized in that, this second passive cooling structure comprises an electric insulation part and a thermal conduction portions, and wherein this electric insulation part is between this thermo-electric conversion module and this thermal conduction portions.
7. solid state cooling structure as claimed in claim 6 is characterized in that, this electric insulation partly is to form in modes such as metal material surface plating or sintering.
8. a package system of integrating encapsulation and cooling structure is characterized in that, comprises:
One package module, this package module has a thermal source;
One thermo-electric conversion module; And
One heat exchange module, this heat exchange module comprise the hot link and fix this thermo-electric conversion module respectively of one first passive cooling structure and one second passive cooling structure, and this first passive cooling structure is between this package module and this thermo-electric conversion module;
Wherein, when an application of power during in this thermo-electric conversion module, the heat that this thermal source produced is sent to this second passive cooling structure through this first passive cooling structure and this thermo-electric conversion module.
9. the package system of integration encapsulation as claimed in claim 8 and cooling structure, it is characterized in that, this package module more comprises a circuit board, plural conductive syndeton and a capsulation material, wherein this thermal source is positioned on one of this circuit board surface, this plural conductive syndeton electrically connects this circuit board and this thermal source, and this capsulation material be positioned at part should the surface, on this thermal source and this conduction connecting structure.
10. the package system of integration encapsulation as claimed in claim 8 and cooling structure, it is characterized in that, this package module more comprises a lead frame, plural conductive syndeton and a capsulation material, wherein this plural conductive syndeton electrically connects a plurality of interior pins and this thermal source of this lead frame, and this capsulation material coats on these a plurality of interior pins, this thermal source and this conduction connecting structure.
11. the package system of integration encapsulation as claimed in claim 8 and cooling structure, it is characterized in that, this thermo-electric conversion module comprises a plurality of thermoelectric materials and is connected material with plural conductive, and wherein this plural conductive of part connects material in order to connect wantonly two adjacent these thermoelectric materials and to be connected with this power supply.
12. the package system of integration encapsulation as claimed in claim 8 and cooling structure is characterized in that, this first passive cooling structure is the metal heat sink with a sintered surface, contiguous this thermo-electric conversion module of this sintered surface.
13. the package system of integration encapsulation as claimed in claim 8 and cooling structure is characterized in that, this second passive cooling structure comprises an electric insulation part and a thermal conduction portions, and wherein this electric insulation part is between this thermo-electric conversion module and this thermal conduction portions.
14. the package system of integration encapsulation as claimed in claim 8 and cooling structure, it is characterized in that, this second passive cooling structure comprises a metal substrate, one of this metal substrate side has a sintered surface and opposite side has a plurality of heat dissipation metal fins, contiguous this thermo-electric conversion module of this sintered surface.
15. a method that forms solid state cooling structure is characterized in that, comprises:
Providing one first passive cooling structure and a plurality of first to stick together structure is positioned on one of this first passive cooling structure first surface;
Dispose a plurality of thermoelectric transformational structures on this first surface, wherein each should the thermoelectricity transformational structure corresponding each this first stick together structure;
Providing one second passive cooling structure and a plurality of second to stick together structure is positioned on one of this second passive cooling structure second surface; And
Stick together each should the thermoelectricity transformational structure and each this second stick together structure.
16. the method for formation solid state cooling structure as claimed in claim 15 is characterized in that, provides the step of this first passive cooling structure to comprise:
One tool thermal conductance substrate is provided, and this tool thermal conductance substrate provides this first surface;
Forming a plurality of metal structures is disposed on this first surface; And
Form a conductive projection on each this metal structure, wherein each this first stick together structure and comprise each this conductive projection and this corresponding metal structure.
17. the method for formation solid state cooling structure as claimed in claim 15 is characterized in that, form this conductive projection comprise with the printing mode carry out.
18. the method for formation solid state cooling structure as claimed in claim 15 is characterized in that, this configuration step comprises:
Form a plurality of first conductive connecting materials on this first surface;
Form a plurality of thermoelectric materials on these a plurality of first conductive connecting materials; And
Form a plurality of second conductive connecting materials on these a plurality of thermoelectric materials, wherein appoint two adjacent these thermoelectric materials to connect by arbitrary this first conductive connecting material or arbitrary this second conductive connecting material.
19. the method for formation solid state cooling structure as claimed in claim 15 is characterized in that, provides the step of this second passive cooling structure to comprise:
One tool thermal conductance substrate is provided, and this tool thermal conductance substrate provides this second surface;
Forming a plurality of metal structures is disposed on this second surface; And
Form a conductive projection on each this metal structure, wherein each this second stick together structure and comprise each this conductive projection and this corresponding metal structure.
20. the method for formation solid state cooling structure as claimed in claim 19 is characterized in that, more comprises this second surface of sintering processes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510050905 CN1822354A (en) | 2005-02-18 | 2005-02-18 | Method for forming solid cooling structure and its integrated with package element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510050905 CN1822354A (en) | 2005-02-18 | 2005-02-18 | Method for forming solid cooling structure and its integrated with package element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1822354A true CN1822354A (en) | 2006-08-23 |
Family
ID=36923539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510050905 Pending CN1822354A (en) | 2005-02-18 | 2005-02-18 | Method for forming solid cooling structure and its integrated with package element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1822354A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102651359A (en) * | 2011-02-25 | 2012-08-29 | 尼克森微电子股份有限公司 | Semiconductor structure with low resistance substrate and low power loss |
| CN103579713A (en) * | 2012-07-25 | 2014-02-12 | 通用汽车环球科技运作有限责任公司 | Battery with solid state cooling |
| US9812629B2 (en) | 2012-07-13 | 2017-11-07 | Industrial Technology Research Institute | Thermoelectric conversion structure and its use in heat dissipation device |
| CN114517329A (en) * | 2022-02-14 | 2022-05-20 | 新阳硅密（上海）半导体技术有限公司 | Wafer cooling device and electroplating equipment |
-
2005
- 2005-02-18 CN CN 200510050905 patent/CN1822354A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102651359A (en) * | 2011-02-25 | 2012-08-29 | 尼克森微电子股份有限公司 | Semiconductor structure with low resistance substrate and low power loss |
| CN102651359B (en) * | 2011-02-25 | 2015-01-14 | 尼克森微电子股份有限公司 | Semiconductor structure with low resistance substrate and low power loss |
| US9812629B2 (en) | 2012-07-13 | 2017-11-07 | Industrial Technology Research Institute | Thermoelectric conversion structure and its use in heat dissipation device |
| CN103579713A (en) * | 2012-07-25 | 2014-02-12 | 通用汽车环球科技运作有限责任公司 | Battery with solid state cooling |
| CN103579713B (en) * | 2012-07-25 | 2016-04-13 | 通用汽车环球科技运作有限责任公司 | With the battery of solid-state cooling |
| CN114517329A (en) * | 2022-02-14 | 2022-05-20 | 新阳硅密（上海）半导体技术有限公司 | Wafer cooling device and electroplating equipment |
| CN114517329B (en) * | 2022-02-14 | 2024-03-15 | 新阳硅密（上海）半导体技术有限公司 | Wafer cooling device and electroplating equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7936054B2 (en) | Multi-chip package | |
| US7772692B2 (en) | Semiconductor device with cooling member | |
| US6882041B1 (en) | Thermally enhanced metal capped BGA package | |
| JP5190122B2 (en) | Semiconductor assembly with reduced thermal diffusion resistance and manufacturing method thereof | |
| US20080278917A1 (en) | Heat dissipation module and method for fabricating the same | |
| US11387159B2 (en) | Chip package | |
| KR20070120917A (en) | Thermal improvement for hotspots on dies in integrated circuit packages | |
| JPH08335782A (en) | Multilayer board | |
| CN100550360C (en) | Equipment and system and manufacture method thereof with bottom heat radiation | |
| US8716830B2 (en) | Thermally efficient integrated circuit package | |
| CN1180927A (en) | High performance, low cost multi-chip module package | |
| US20090153007A1 (en) | Light source module and method for manufacturing same | |
| US20110042784A1 (en) | Mechanical Barrier Element for Improved Thermal Reliability of Electronic Components | |
| US6700783B1 (en) | Three-dimensional stacked heat spreader assembly for electronic package and method for assembling | |
| WO2006132794A2 (en) | A light-emitting device module with flip-chip configuration on a heat-dissipating substrate | |
| CN111261598A (en) | Packaging structure and power module applicable to same | |
| US20060156737A1 (en) | Cooling structure of solid state and formation thereof with integrated package | |
| US11171072B2 (en) | Heat dissipation substrate and manufacturing method thereof | |
| US20090015134A1 (en) | Heat dissipation arrangement of a light emitting module | |
| TWI269414B (en) | Package substrate with improved structure for thermal dissipation and electronic device using the same | |
| CN1822354A (en) | Method for forming solid cooling structure and its integrated with package element | |
| US7943430B2 (en) | Semiconductor device with heat sink and method for manufacturing the same | |
| CN116053232A (en) | Electronic package, manufacturing method of electronic package and electronic equipment | |
| CN102194802A (en) | Electronic assembly body | |
| CN113675093B (en) | Packaging design and preparation method of double-sided plastic packaging heat dissipation structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20060823 |