CN1818994A - Manufacture of optical interference color display panel - Google Patents
Manufacture of optical interference color display panel Download PDFInfo
- Publication number
- CN1818994A CN1818994A CN 200510007688 CN200510007688A CN1818994A CN 1818994 A CN1818994 A CN 1818994A CN 200510007688 CN200510007688 CN 200510007688 CN 200510007688 A CN200510007688 A CN 200510007688A CN 1818994 A CN1818994 A CN 1818994A
- Authority
- CN
- China
- Prior art keywords
- sacrifice layer
- display panel
- color display
- manufacture method
- optical interference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Liquid Crystal (AREA)
Abstract
A manufacture method of optical interference type of multi-color display panel: firstly forming a first electrode structure on a foundation plate; defining at lease a first region, a second region and a third region on the first electrode structure; then forming a first sacrificial layer on the first electrode structure of the first region, the second region and the third region, forming a second sacrificial layer on the first sacrificial layer of the second region and the third region, forming a third sacrificial layer on the second sacrificial layer of the third region, the etch speed of every sacrificial layer are different according to the same or different etch liquid; Next, forming a pattern support layer on the first electrode structure, then forming a second electrode structure and removing all the sacrificial layers to form some air clearances. It can control the formed air clearances efficiently because of the different etch speed of every sacrificial layer.
Description
Technical field
The present invention relates to a kind of manufacture method of optical interference color display panel, particularly relate to a kind of manufacture method that can effectively control the optical interference color display panel of clearance.
Background technology
Have flat-panel screens in light weight, thin thickness at present, for example LCD (LCD), organic electroluminescent display device (OLED) and plasma display panel (PDP) etc. are widely used in the daily life.Wherein, LCD has become the main flow of display gradually, but LCD still has many problems, for example is that the visual angle is wide inadequately, response time is fast inadequately and needs to use polaroid (polarizer) and make problems such as the light source utilization ratio is not good.
Existing now a kind of light interference type display panel is developed, and sees also shown in Figure 1ly, and it illustrates the structural representation into existing known optical interference color display panel.Existing known optical interference color display panel 100 is made of a transparency carrier 110, one first electrode structure 120, a patterning supporting layer 130 and the second electrode lay 140.Wherein, first electrode structure 120 is made of with optical film 126 a plurality of first electrodes 122, absorbing membranous layer (absorption layer) 124.What merit attention is to be separated out a plurality of clearances (Air Gap) G1, G2 and G3 between first electrode structure 120 and the optical film 126 between meeting.
After light enters to first electrode structure 120 by transparency carrier 110, can and be incident on the second electrode lay 140 through clearance G1, G2 and G3.Then, reflect from first electrode structure 120 by the second electrode lay 140 again.Because light can be subjected to interference (interference) in various degree in different clearance G1, G2 and G3, and then presents different color light, as ruddiness, green glow and blue light, to reach display effect.Yet, different clearance G1, G2, be to control by the sacrifice layer that forms different-thickness (will be described in detail in the back) with G3.In other words, the quality of sacrifice layer quality will have a strong impact on the optical display properties of optical interference color display panel 100.
Fig. 2 A-2D illustrates the flow process sectional view of existing known formation sacrifice layer.Please at first consult shown in Fig. 2 A, at first, one transparency carrier 110 is provided, on transparency carrier 110, form first electrode structure 120, and first electrode structure 120 is made of with optical film 126 a plurality of first electrodes 122, absorbing membranous layer (absorption layer) 124.In addition, definable goes out first area 10, second area 20 and the 3rd zone 30 on first electrode structure 120.
See also shown in Fig. 2 B, then, comprehensive deposition first sacrifice layer 132 (amorphous silicon).Then, carry out little shadow/etch process, to remove first area 10, second area 20 and the 3rd zone 30 first sacrifice layer 132 in addition, to form first sacrifice layer 132 of patterning.
See also shown in Fig. 2 C, comprehensive deposition second sacrifice layer 134, and the material of second sacrifice layer 134 is identical with first sacrifice layer 132.Then, carry out little shadow/etch process, to remove second area 20 and the 3rd zone 30 second sacrifice layer 134 in addition, to form second sacrifice layer 134 of patterning.It should be noted that, during second sacrifice layer 132 remove first viewing area 10 by etch process in, because first sacrifice layer 132 is identical material (having identical etched speed) with second sacrifice layer 134, therefore, the employed etching solution of this etch process is easy to established first sacrifice layer 132 is caused damage, and changed the original depth of first sacrifice layer 132, and then successive process is impacted.
See also shown in Fig. 2 D, then, comprehensive deposition the 3rd sacrifice layer 136, and the material of the 3rd sacrifice layer 136 and first sacrifice layer 132, second sacrifice layer 134 are all identical.Then, then carry out little shadow/etch process, removing the 3rd three sacrifice layer 136 of zone beyond 30, and form the 3rd sacrifice layer 136 of patterning, so far, each sacrifice layer just completes.When it should be noted that the 3rd sacrifice layer 136 remove first viewing area 10 by etch process in,, therefore, be easy to again first sacrifice layer 132 be caused damage because the 3rd sacrifice layer 136 is positioned on first sacrifice layer 132.Similarly, during the 3rd sacrifice layer 136 remove second viewing area 20 by etch process in, because the 3rd sacrifice layer 136 is positioned on first sacrifice layer 132, and the 3rd sacrifice layer 136 is identical with the etched speed of first sacrifice layer 132, therefore, when removing the 3rd sacrifice layer 136, be easy to second sacrifice layer 134 is caused damage.
At last, comprehensive coating one deck for example is a photoresist, and with the photoresist patterning to form patterning supporting layer 130.Then, form the second electrode lay 140 first area 10, second area with the 3rd regional 30 on the sacrifice layer of different-thickness with the part zone of patterning supporting layer 130 on, utilize xenon hexafluoride (XeF6) that all sacrifice layers 132,134,136 are removed again, to form different clearance G1, G2, G3 (seeing also Fig. 1).
In other words, different clearance G1, G2 and G3 are controlled by the thickness of deposition of sacrificial layer.If sacrifice layer is because of being compromised the thickness that changes original design, just can't control the size of formed clearance G1, G2 and G3 effectively, and then have a strong impact on the optical display properties of optical interference color display panel 100.Under the not good situation of aforementioned processing procedure degree of stability, the very easy problem that has yield decline and manufacturing cost to rise of existing known techniques.
This shows that the manufacture method of above-mentioned existing optical interference color display panel obviously still has inconvenience and defective, and demands urgently further being improved.The problem that exists for the manufacture method that solves optical interference color display panel, relevant manufacturer there's no one who doesn't or isn't seeks the road that solves painstakingly, but do not see always that for a long time suitable design finished by development, and general manufacture method does not have appropriate manufacture method to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that the manufacture method of above-mentioned existing optical interference color display panel exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of manufacture method of new optical interference color display panel, can improve the manufacture method of general existing optical interference color display panel, make it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective of the manufacture method existence of existing optical interference color display panel, and provide a kind of manufacture method of new optical interference color display panel, technical matters to be solved is to make it can accurately grasp the thickness that forms sacrifice layer, and then forms the preferable clearance of quality.
Another purpose of the present invention is, a kind of manufacture method of optical interference color display panel is provided, and technical matters to be solved is to make it can form the preferable clearance of quality, therefore, more can promote the optical display properties of optical interference color display panel, thereby be suitable for practicality more.
For reaching above-mentioned goal of the invention, a kind of manufacture method of optical interference color display panel, the method at first provide a substrate, form one first electrode structure on substrate.A back first area, a second area and one the 3rd zone of on first electrode structure, defining.Then, form one first sacrifice layer on first electrode structure in first area, second area and the 3rd zone.In addition, form one second sacrifice layer on first sacrifice layer in second area and the 3rd zone.In addition, formation one the 3rd sacrifice layer on second sacrifice layer in the 3rd zone, and first sacrifice layer, second sacrifice layer are neither identical with the etched speed (etching rate) of the 3rd sacrifice layer.Then, form a patterning supporting layer on first electrode structure, form subsequently a second electrode lay on first sacrifice layer of first area, on second sacrifice layer of second area, on the 3rd sacrifice layer in the 3rd zone with the subregion of patterning supporting layer on.At last, remove first sacrifice layer, second sacrifice layer and the 3rd sacrifice layer, between first electrode structure and the second electrode lay, to form a plurality of clearances (air gap).
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein transparency carrier for example comprises glass substrate or plastic substrate.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the formation method of first electrode structure at first, forms a plurality of first electrodes on substrate.Then, on a plurality of first electrodes, form an absorbing membranous layer (absorption layer).At last, on absorbing membranous layer, form an optical film.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein a plurality of first electrodes for example are that transparency electrode and its material for example comprise indium tin oxide.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of absorbing membranous layer for example comprise chromium (Cr) and chromaking molybdenum (MoCr) one of them.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of optical film for example comprise nitrogen silicide and oxygen silicide one of them.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of patterning supporting layer for example comprises photoresist.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the etched speed of second sacrifice layer is greater than 1.5 times of first sacrifice layers, and the etched speed of the 3rd sacrifice layer is greater than 1.5 times of second sacrifice layers.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of first sacrifice layer for example is to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of second sacrifice layer for example is to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of the 3rd sacrifice layer for example is to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the second electrode lay is a metal electrode, and the material of the second electrode lay for example is molybdenum, molybdenum alloy, aluminium, aluminium alloy, chromium, nickel, titanium and combination thereof one of them.
The present invention proposes a kind of manufacture method of optical interference color display panel, and the method at first provides a substrate, forms one first electrode structure on substrate.A back first area, a second area and one the 3rd zone of on first electrode structure, defining.Then, in the first area, form one first sacrifice layer on first electrode structure.In addition, in second area, form one second sacrifice layer on first electrode structure.In addition, formation one the 3rd sacrifice layer is on first electrode structure in the 3rd zone, and first sacrifice layer, second sacrifice layer are neither identical with the etched speed and the thickness of the 3rd sacrifice layer.Then, form a patterning supporting layer on first electrode structure, form subsequently a second electrode lay on first sacrifice layer of first area, on second sacrifice layer of second area with the 3rd sacrifice layer in the 3rd zone on the subregion of patterning supporting layer on.At last, remove first sacrifice layer, second sacrifice layer and the 3rd sacrifice layer, between first electrode structure and the second electrode lay, to form a plurality of clearances.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein transparency carrier for example comprises glass substrate or plastic substrate.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the formation method of first electrode structure at first, forms a plurality of first electrodes on substrate.Then, on a plurality of first electrodes, form an absorbing membranous layer (absorption layer).At last, on absorbing membranous layer, form an optical film.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein a plurality of first electrodes for example are that transparency electrode and its material for example comprise indium tin oxide.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of absorbing membranous layer for example comprise chromium (Cr) and chromaking molybdenum (MoCr) one of them.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of optical film for example comprise nitrogen silicide and oxygen silicide one of them.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of patterning supporting layer for example comprises photoresist.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the etched speed of second sacrifice layer is greater than 1.5 times of first sacrifice layers, and the etched speed of the 3rd sacrifice layer is greater than 1.5 times of second sacrifice layers.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of first sacrifice layer for example is to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of second sacrifice layer for example is to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the material of the 3rd sacrifice layer for example is to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
The manufacture method of the described optical interference color display panel of one embodiment of the invention, wherein the second electrode lay is a metal electrode, and the material of the second electrode lay for example is molybdenum, molybdenum alloy, aluminium, aluminium alloy, chromium, nickel, titanium and combination thereof one of them.
The present invention proposes a kind of manufacture method of optical interference color display panel, and the method at first provides a substrate, forms one first electrode structure on substrate.A back first area and the second area of on first electrode structure, defining.Form one first sacrifice layer on first electrode structure in first area and this second area.Form one second sacrifice layer on first sacrifice layer in second area, and first sacrifice layer is neither identical with the etched speed of second sacrifice layer.Then, form a patterning supporting layer on first electrode structure, form a second electrode lay subsequently on first sacrifice layer of first area, on this second sacrifice layer of second area, and on the subregion of patterning supporting layer.At last, remove first sacrifice layer and second sacrifice layer, between first electrode structure and the second electrode lay, to form a plurality of clearances.
The present invention proposes a kind of manufacture method of optical interference color display panel, and the method at first provides a substrate, forms one first electrode structure on substrate.A back first area and the second area of on first electrode structure, defining.Then, in the first area, form one first sacrifice layer on first electrode structure.In addition, in second area, form one second sacrifice layer on first electrode structure, and first sacrifice layer is neither identical with the etched speed and the thickness of second sacrifice layer.In addition, form a patterning supporting layer on first electrode structure, form a second electrode lay subsequently on first sacrifice layer of first area, on second sacrifice layer of second area, and on the subregion of patterning supporting layer.At last, remove first sacrifice layer and second sacrifice layer, between first electrode structure and the second electrode lay, to form most clearances.
The manufacture method of optical interference color display panel of the present invention is to utilize the material of different etched speed to form sacrifice layer.Therefore, utilize the characteristic that has different etched speed between each sacrifice layer, can avoid sacrifice layer to be compromised, and then form the preferable clearance of quality, more can improve the optical display properties of optical interference color display panel.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, major technique of the present invention thes contents are as follows:
In order to achieve the above object, the manufacture method of foundation optical interference color display panel of the present invention can make it can accurately grasp the thickness that forms sacrifice layer, and then forms the preferable clearance of quality.
Again, in order to achieve the above object, the manufacture method according to optical interference color display panel of the present invention more can promote the optical display properties of optical interference color display panel, thereby be suitable for practicality more.
By technique scheme, the manufacture method of optical interference color display panel of the present invention has following advantage at least:
One, the manufacture method of optical interference color display panel of the present invention can avoid sacrifice layer to suffer damage.Therefore, the yield on can controlling the clearance effectively and making, and then the optical display properties of lifting optical interference color display panel.
Two, the manufacture method of optical interference color display panel of the present invention forms sacrifice layer by the material of the different etched speed of deposition, avoids sacrifice layer to suffer damage, and more can accurately control the thickness of sacrifice layer.
In sum, the manufacture method of the optical interference color display panel that the present invention is special, it has above-mentioned many advantages and practical value, and in similar manufacture method, do not see have similar design to publish or use and really genus innovation, no matter it is all having bigger improvement on manufacture method or on the function, have large improvement technically, and produced handy and practical effect, and the manufacture method of more existing optical interference color display panel has the multinomial effect of enhancement, thereby be suitable for practicality more, and have the extensive value of industry, really be a novelty, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of instructions, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the structural representation of existing known optical interference color display panel.
Fig. 2 A~2D is the flow process sectional view of existing known formation sacrifice layer.
Fig. 3 A~3F is the manufacture method flow process sectional view according to the first embodiment of the invention optical interference color display panel.
Fig. 4 A~4F illustrates and is the manufacture method flow process sectional view according to the second embodiment of the invention optical interference color display panel.
100,200,300: optical interference color display panel
110,210,310: transparency carrier
120,220,320: the first electrode structures
122,222,322: the first electrodes
124,224,324: absorbing membranous layer
126,226,326: optical film
130,230,330: the patterning supporting layer
132,232,332: the first sacrifice layers
134,234,334: the second sacrifice layers
136,236,336: the three sacrifice layers
140,240,340: the second electrode lay
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its embodiment of manufacture method, step, feature and the effect thereof of the optical interference color display panel that foundation the present invention is proposed, describe in detail as after.
First embodiment
Fig. 3 A~3F is the manufacture method flow process sectional view according to the first embodiment of the invention optical interference color display panel.See also shown in Fig. 3 A, at first, provide a transparency carrier 210, its material for example is glass substrate or plastic substrate, and forms first electrode structure 220 on transparency carrier 210.
The formation method of this first electrode structure 220 for example is that (Indium Tin Oxide ITO) is deposited on the transparency carrier 210 with indium tin oxide with physical vaporous deposition or other suitable modes.Pass through little shadow/etch process again with the indium tin oxide patterning, to form a plurality of first transparent electrodes 222.Then, deposition one deck absorbing membranous layer 224 first electrode 222 with do not form on substrate 210 subregions of first electrode 222.Wherein, the material of absorbing membranous layer 224 for example is chromium (Cr) or chromaking molybdenum (MoCr).
At last, deposition one deck optical film 226 is on absorbing membranous layer 224.Wherein, the material of optical film 226 for example is nitrogen silicide and oxygen silicide.Certainly, it is single rete that optical film 226 does not limit, can by the high dielectric of multilayer be number with the low dielectric of multilayer be the material of number stack alternately form.Above-mentioned step has just been finished first electrode structure 220, and first electrode structure 220 is made up of with optical film 226 above-mentioned a plurality of first electrodes 222, absorbing membranous layer 224.In addition, on first electrode structure 220, define first area 10, second area 20 and the 3rd zone 30.
See also shown in Fig. 3 B, then, comprehensive deposition first sacrifice layer 232, its material for example is to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.Then, carry out little shadow/etch process, removing first sacrifice layer 232 beyond first area 10, second area 20 and the 3rd zone 30, and then form first sacrifice layer 232 of patterning.
See also shown in Fig. 3 C, then, comprehensive deposition second sacrifice layer 234, and the material of second sacrifice layer 234, its etched speed (etching rate) for example is 1.5 times greater than first sacrifice layer 232 at least.The material of this second sacrifice layer 234 for example is to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.As long as the material of second sacrifice layer 234, its etched speed is greater than the etched speed of first sacrifice layer 232.Certainly also can select identical material for example is amorphous silicon, utilizes different film-forming temperatures that amorphous silicon is dealt with again, makes the sacrifice layer 232 of winning have different etched speed with the amorphous silicon material of second sacrifice layer 234.In any case, for identical or different etching solution, as long as the etched speed of each sacrifice layer is neither identical.
Then, second sacrifice layer 234 is carried out little shadow/etch process, removing second area 20 and the 3rd second sacrifice layer 234 of zone beyond 30, and then form second sacrifice layer 234 of patterning.When it should be noted that second sacrifice layer 234 that in etch process, removes in first viewing area 10, though second sacrifice layer 234 be positioned on first sacrifice layer 232 because the etched speed of second sacrifice layer 234 is bigger.Therefore, in the process that removes, for example be in the mode of wet etching or utilize other suitable modes to remove second sacrifice layer 234, utilize the characteristic of different etched speed between two sacrifice layers can avoid first sacrifice layer 232 of its lower floor is caused damage, more can keep the original thickness of first sacrifice layer 232.
See also shown in Fig. 3 D, then, comprehensive deposition the 3rd sacrifice layer 236.Then, carry out little shadow/etch process, removing the 3rd three sacrifice layer 236 of zone beyond 30, and then form the 3rd sacrifice layer 236 of patterning.So far the sacrifice layer that is positioned at first area 10, second area 20 and the 3rd zone 30 just completes.
What merit attention is, for patterning the 3rd sacrifice layer 236, can utilize wet etching or other suitable modes to remove the 3rd sacrifice layer 236 in the 3rd sacrifice layer 236 and the second area 20 in the first area 10.Be positioned at the 3rd sacrifice layer 236 of first area 10, its etched speed is much larger than first sacrifice layer 232.Though first sacrifice layer 232 is positioned at its below, in the process that removes the 3rd sacrifice layer 236, can't cause damage to first sacrifice layer 232.
Similarly, as yet not before the patterning, be positioned at the 3rd sacrifice layer 236 of second area 20, its etched speed for example is 1.5 times greater than second sacrifice layer 234.Though second sacrifice layer 234 is positioned at the 3rd sacrifice layer 236 belows, can be by the difference of etched speed, and then avoid second sacrifice layer 234 to be compromised.In addition, more can accurately control the thickness of each sacrifice layer.
See also shown in Fig. 3 E, comprehensive coating one deck photoresist, and with the photoresist patterning to form patterning supporting layer 230.Then, comprehensive deposition the second electrode lay 240, the metal material that its material normally has a light reflective for example are one of them of molybdenum, molybdenum alloy, aluminium, aluminium alloy, chromium, nickel, titanium and combination thereof.Then, carry out little shadow/etch process, form the second electrode lay 240 of patterning.This second electrode lay 240 is formed on first sacrifice layer 232 of first area 10, on second sacrifice layer 234 of second area 20, on the 3rd sacrifice layer 236 in the 3rd zone 30, and on the subregion of patterning supporting layer 230.
At last, see also shown in Fig. 3 F, utilizing for example is that xenon hexafluoride (XeF6) removes all sacrifice layers again, and then forms different clearance C1, C2 and C3.In more detail, the second electrode lay 240 is formed on the sacrifice layer of different-thickness, just definable goes out different clearance C1, C2 and C3, in addition, between the clearance stand-off distance generally approximately less than/equal 1 micron.In the present embodiment, have different etched speed between each sacrifice layer, by the less sacrifice layer of elder generation's etched speed of deposition, and then the sacrifice layer of avoiding early depositing suffers damage.
Therefore, compare, more can accurately control the thickness of sacrifice layer, and then keep clearance C1, C2 and C3 quality that forms and the yield that promotes on making, more can promote the optical display properties of optical interference color display panel 200 with existing known techniques.
Second embodiment
Fig. 4 A~4F is the manufacture method flow process sectional view according to the second embodiment of the invention optical interference color display panel.See also Fig. 4 A, it is illustrated among Fig. 3 A of first embodiment, forms first electrode structure 220 and the step that defines first area 10, second area 20 and the 3rd zone 30.
See also shown in Fig. 4 B, follow comprehensive deposition first sacrifice layer 332, its material for example is to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.Then, carry out little shadow/etch process, removing first sacrifice layer 332 beyond the first area 10, and then form first sacrifice layer 332 of patterning.
See also shown in Fig. 4 C, then, comprehensive deposition second sacrifice layer 334, and the material of second sacrifice layer 334, its etched speed for example is 1.5 times greater than first sacrifice layer 332 at least.The material of this second sacrifice layer 334 for example is to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.As long as the material of second sacrifice layer 334, its etched speed is greater than the etched speed of first sacrifice layer 332.Certainly also can select identical material for example is amorphous silicon, utilizes different film-forming temperatures that amorphous silicon is dealt with again, makes the sacrifice layer 332 of winning have different etched speed with the amorphous silicon material of second sacrifice layer 334.In any case, for identical or different etching solution, as long as the etched speed of each sacrifice layer is neither identical.
Then, second sacrifice layer 334 is carried out little shadow/etch process, removing second sacrifice layer 334 beyond the second area 20, and then form second sacrifice layer 334 of patterning.When it should be noted that second sacrifice layer 334 that in etch process, removes in first viewing area 10, though second sacrifice layer 334 be positioned on first sacrifice layer 332 because the etched speed of second sacrifice layer 334 is bigger.Therefore, in the process that removes, for example be in the mode of wet etching or utilize other suitable modes to remove second sacrifice layer 334, utilize the characteristic of different etched speed between sacrifice layer can avoid first sacrifice layer 332 of its lower floor is caused damage, more can keep the original thickness of first sacrifice layer 332.
See also shown in Fig. 4 D, then, comprehensive deposition the 3rd sacrifice layer 336.Then, carry out little shadow/etch process, removing the 3rd three sacrifice layer 336 of zone beyond 30, and then form the 3rd sacrifice layer 336 of patterning.So far the sacrifice layer that is positioned at first area 10, second area 20 and the 3rd zone 30 just completes.
What merit attention is, for patterning the 3rd sacrifice layer 336, can utilize wet etching or other suitable modes to remove the 3rd sacrifice layer 336 in the 3rd sacrifice layer 336 and the second area 20 in the first area 10.Be positioned at the 3rd sacrifice layer 336 of first area 10, its etched speed is much larger than first sacrifice layer 332.Though first sacrifice layer 332 is positioned at its below, in the process that removes the 3rd sacrifice layer 336, can't cause damage to first sacrifice layer 332.
Similarly, as yet not before the patterning, be positioned at the 3rd sacrifice layer 336 of second area 20, its etched speed for example is 1.5 times greater than second sacrifice layer 334.Though second sacrifice layer 334 is positioned at the 3rd sacrifice layer 336 belows, can be by the difference of etched speed, and then avoid second sacrifice layer 334 to be compromised.In addition, more can accurately control the thickness of each sacrifice layer.
See also shown in Fig. 4 E, comprehensive coating one deck photoresist, and with the photoresist patterning to form patterning supporting layer 330.Then, comprehensive deposition the second electrode lay 340, the metal material that its material normally has a light reflective for example are one of them of molybdenum, molybdenum alloy, aluminium, aluminium alloy, chromium, nickel, titanium and combination thereof.Then, carry out little shadow/etch process, form the second electrode lay 340 of patterning.This second electrode lay 340 is formed on first sacrifice layer 332 of first area 10, on second sacrifice layer 334 of second area 20, on the 3rd sacrifice layer 336 in the 3rd zone 30, and on the subregion of patterning supporting layer 330.
At last, see also shown in Fig. 4 F, it represents to form different clearance C1, C2 and the step of C3 among Fig. 3 F of first embodiment.In more detail, the second electrode lay 340 is formed on the sacrifice layer of different-thickness, just definable goes out different clearance D1, D2 and D3.In the present embodiment, by the less sacrifice layer of elder generation's etched speed of deposition, and then the sacrifice layer of avoiding early depositing suffers damage.
Previous embodiment is to be that example describes with clearance C1, C2, C3 and clearance D1, D2, D3, but is not in order to limit the present invention.Specifically, in the manufacture method of optical interference color display panel of the present invention, also can only produce two kinds of different clearances, its production method is similar to the disclosed processing procedure of aforementioned content, and only its difference part is: only carry out the making of first sacrifice layer and second sacrifice layer herein.On the other hand, in the manufacture method of optical interference color display panel of the present invention, also can produce the clearance more than three kinds, its production method is also similar to the disclosed processing procedure of aforementioned content, only its difference part is: except the making of carrying out first sacrifice layer, second sacrifice layer and the 3rd sacrifice layer, more comprise the making of carrying out other kind sacrifice layers herein.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (26)
1, a kind of manufacture method of optical interference color display panel is characterized in that it may further comprise the steps:
One substrate is provided, on this substrate, forms one first electrode structure;
On this first electrode structure, define a first area, a second area and one the 3rd zone;
Form one first sacrifice layer on this first electrode structure in this first area, this second area and the 3rd zone;
Form one second sacrifice layer on this first sacrifice layer in this second area and the 3rd zone;
Formation one the 3rd sacrifice layer on this second sacrifice layer in the 3rd zone, and this first sacrifice layer, second sacrifice layer are neither identical with the etched speed of the 3rd sacrifice layer;
On this first electrode structure, form a patterning supporting layer;
Form a second electrode lay at this first sacrifice layer of this first area, this second sacrifice layer of this second area, the 3rd sacrifice layer in the 3rd zone, and on the subregion of this patterning supporting layer; And
Remove this first sacrifice layer, this second sacrifice layer and the 3rd sacrifice layer, between this first electrode structure and this second electrode lay, to form most clearances.
2, the manufacture method of optical interference color display panel according to claim 1 is characterized in that wherein said transparency carrier comprises glass substrate or plastic substrate.
3, the manufacture method of optical interference color display panel according to claim 1 is characterized in that the formation method of wherein said first electrode structure may further comprise the steps:
On this substrate, form a plurality of first electrodes;
On those first electrodes, form an absorbing membranous layer; And
On this absorbing membranous layer, form an optical film.
4, the manufacture method of optical interference color display panel according to claim 3 is characterized in that the material that wherein said those first electrodes are transparency electrode and those first electrodes comprises indium tin oxide.
5, the manufacture method of optical interference color display panel according to claim 3, the material that it is characterized in that wherein said absorbing membranous layer comprise chromium (Cr) and chromaking molybdenum (MoCr) one of them.
6, the manufacture method of optical interference color display panel according to claim 3, the material that it is characterized in that wherein said optical film comprise nitrogen silicide and oxygen silicide one of them.
7, the manufacture method of optical interference color display panel according to claim 1 is characterized in that the material of wherein said patterning supporting layer comprises photoresist.
8, the manufacture method of optical interference color display panel according to claim 1, the etched speed that it is characterized in that wherein said second sacrifice layer is greater than 1.5 times of this first sacrifice layers, and the etched speed of the 3rd sacrifice layer is greater than 1.5 times of this second sacrifice layers.
9, the manufacture method of optical interference color display panel according to claim 1, the material that it is characterized in that wherein said first sacrifice layer are to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
10, the manufacture method of optical interference color display panel according to claim 1, the material that it is characterized in that wherein said second sacrifice layer are to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
11, the manufacture method of optical interference color display panel according to claim 1, the material that it is characterized in that wherein said the 3rd sacrifice layer are to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
12, the manufacture method of optical interference color display panel according to claim 1, it is characterized in that wherein said the second electrode lay is a metal electrode, and the material of this second electrode lay is molybdenum, molybdenum alloy, aluminium, aluminium alloy, chromium, nickel, titanium and combination thereof one of them.
13, a kind of manufacture method of optical interference color display panel is characterized in that it may further comprise the steps:
One substrate is provided, on this substrate, forms one first electrode structure;
On this first electrode structure, define a first area, a second area and one the 3rd zone;
In this first area, form one first sacrifice layer on this first electrode structure;
In this second area, form one second sacrifice layer on this first electrode structure;
Formation one the 3rd sacrifice layer is on this first electrode structure in the 3rd zone, and this first sacrifice layer, this second sacrifice layer are neither identical with the etched speed and the thickness of the 3rd sacrifice layer;
On this first electrode structure, form a patterning supporting layer;
Form a second electrode lay in this first sacrifice layer of this first area, this second sacrifice layer of this second area, the 3rd sacrifice layer in the 3rd zone, and on the subregion of this patterning supporting layer; And
Remove this first sacrifice layer, this second sacrifice layer and the 3rd sacrifice layer, between this first electrode structure and this second electrode lay, to form most clearances.
14, the manufacture method of optical interference color display panel according to claim 13 is characterized in that wherein said transparency carrier is glass substrate or plastic substrate.
15, the manufacture method of optical interference color display panel according to claim 13 is characterized in that the formation method of wherein said first electrode structure may further comprise the steps:
On this substrate, form a plurality of first electrodes;
On those first electrodes, form an absorbing membranous layer; And
On this absorbing membranous layer, form an optical film.
16, the manufacture method of optical interference color display panel according to claim 15 is characterized in that the material that wherein said those first electrodes are transparency electrode and those first electrodes comprises indium tin oxide.
17, the manufacture method of optical interference color display panel according to claim 15, the material that it is characterized in that wherein said absorbing membranous layer comprise chromium and chromaking molybdenum one of them.
18, the manufacture method of optical interference color display panel according to claim 15, the material that it is characterized in that wherein said optical film comprise nitrogen silicide and oxygen silicide one of them.
19, the manufacture method of optical interference color display panel according to claim 13 is characterized in that the material of wherein said patterning supporting layer comprises photoresist.
20, the manufacture method of optical interference color display panel according to claim 13, the etched speed that it is characterized in that wherein said second sacrifice layer is greater than 1.5 times of this first sacrifice layers, and the etched speed of the 3rd sacrifice layer is greater than 1.5 times of this second sacrifice layers.
21, the manufacture method of optical interference color display panel according to claim 13, the material that it is characterized in that wherein said first sacrifice layer are to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
22, the manufacture method of optical interference color display panel according to claim 13, the material that it is characterized in that wherein said second sacrifice layer are to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
23, the manufacture method of optical interference color display panel according to claim 13, the material that it is characterized in that wherein said the 3rd sacrifice layer are to be selected from chromaking molybdenum, molybdenum, polysilicon, amorphous silicon and N type amorphous silicon.
24, the manufacture method of optical interference color display panel according to claim 13, it is characterized in that wherein said the second electrode lay is a metal electrode, and the material of this second electrode lay is molybdenum, molybdenum alloy, aluminium, aluminium alloy, chromium, nickel, titanium and combination thereof one of them.
25, a kind of manufacture method of optical interference color display panel is characterized in that it may further comprise the steps:
One substrate is provided, on this substrate, forms one first electrode structure;
On this first electrode structure, define a first area and a second area;
Form one first sacrifice layer on this first electrode structure in this first area and this second area;
Form one second sacrifice layer on this first sacrifice layer in this second area, and this first sacrifice layer is neither identical with the etched speed of second sacrifice layer;
On this first electrode structure, form a patterning supporting layer;
Form a second electrode lay on this first sacrifice layer of this first area, on this second sacrifice layer of this second area, and on the subregion of this patterning supporting layer; And
Remove this first sacrifice layer and this second sacrifice layer, between this first electrode structure and this second electrode lay, to form most clearances.
26, a kind of manufacture method of optical interference color display panel is characterized in that it may further comprise the steps:
One substrate is provided, on this substrate, forms one first electrode structure;
On this first electrode structure, define a first area and a second area;
In this first area, form one first sacrifice layer on this first electrode structure;
In this second area, form one second sacrifice layer on this first electrode structure, and this first sacrifice layer is neither identical with the etched speed and the thickness of this second sacrifice layer;
On this first electrode structure, form a patterning supporting layer;
Form a second electrode lay on this first sacrifice layer of this first area, on this second sacrifice layer of this second area, and on the subregion of this patterning supporting layer; And
Remove this first sacrifice layer and this second sacrifice layer, between this first electrode structure and this second electrode lay, to form most clearances.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100076887A CN100470608C (en) | 2005-02-07 | 2005-02-07 | Manufacture of optical interference color display panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100076887A CN100470608C (en) | 2005-02-07 | 2005-02-07 | Manufacture of optical interference color display panel |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1818994A true CN1818994A (en) | 2006-08-16 |
CN100470608C CN100470608C (en) | 2009-03-18 |
Family
ID=36918986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100076887A Expired - Fee Related CN100470608C (en) | 2005-02-07 | 2005-02-07 | Manufacture of optical interference color display panel |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100470608C (en) |
-
2005
- 2005-02-07 CN CNB2005100076887A patent/CN100470608C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100470608C (en) | 2009-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101097946B (en) | Organic light emitting display device and method for fabricating the same | |
KR20060109803A (en) | Method of manufacturing optical interference color display | |
CN1917725A (en) | Display device and method for manufacturing display device | |
CN1677209A (en) | Liquid crystal display device and method for fabricating the same | |
CN1417863A (en) | Plate display and its making process | |
US8038494B2 (en) | Organic electroluminescent device and method of manufacturing the same | |
EP2720285A1 (en) | Method of fabricating patterned substrate | |
CN1623236A (en) | A method of forming a metal pattern and a method of fabricating tft array panel by using the same | |
CN1675581A (en) | Liquid crystal display device | |
CN1702814A (en) | Plasma display panel and method for making a plasma display panel | |
CN1278166C (en) | Manufacturing method of liquid crystal display device having concave shaped reflection layer | |
CN1689378A (en) | Organic EL display | |
CN1818994A (en) | Manufacture of optical interference color display panel | |
CN1992150A (en) | Film etching method | |
CN1627872A (en) | Method for fabricating organic electro-luminance device | |
CN101055854A (en) | Making method of the pixel structure and pixel structure | |
CN101043006A (en) | Method for manufacturing thin film electric crystal | |
CN100347813C (en) | Thin film transistor array substrate and manufacturing method of thin film laminated construction | |
CN1888966A (en) | Active element array substrate and method for producing colour filtering substrate | |
CN1825189A (en) | Method for making step contact window of two-dimensional display | |
CN101075583A (en) | Method for producing active component array base plate | |
CN102800254A (en) | Electronic paper display device and method of manufacturing the same | |
CN1324388C (en) | Manufacture of low temperature polycrystal silicon film electric crystal LCD device | |
CN1779519A (en) | Dynamic component array basilar plate, color optical filter and production thereof | |
CN1992290A (en) | Thin film transistor substrate and producing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1094075 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090318 Termination date: 20110207 |
|
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1094075 Country of ref document: HK |