CN1818742A - Electro-optical modulating method and device for transmission light based on tri-step electro-optical materials - Google Patents
Electro-optical modulating method and device for transmission light based on tri-step electro-optical materials Download PDFInfo
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- CN1818742A CN1818742A CNA2006100247245A CN200610024724A CN1818742A CN 1818742 A CN1818742 A CN 1818742A CN A2006100247245 A CNA2006100247245 A CN A2006100247245A CN 200610024724 A CN200610024724 A CN 200610024724A CN 1818742 A CN1818742 A CN 1818742A
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Abstract
A device for carrying out electro optical modulation on transmission light based on third order electro optical material consists of coupled prism, metal top electrode, third order organic polymer guide wave layer, modulator formed by isolation layer and metal bottom electrode, and input matching circuit .It is featured as exerting a larger DC bias voltage and a smaller modulation input signal simultaneously on third order organic polymer guide wave layer through input matching circuit to change refractivity of said guide wave layer and so as to change reflectivity at operation angle for realizing modulation on intensity reflection light .
Description
Technical field
The present invention relates to a kind of method and apparatus that transmission light is carried out electrooptical modulation based on three rank electrooptical materials, adopt the attenuated total reflection principle, utilize upper edge or the negative edge relatively responsive character of emergent light intensity at attenuated total reflection spectrum, the transmission light intensity is modulated, belong to photoelectron communication and optical information processing field.
Background technology
In photoelectric communication transmission and optical information processing field, need be loaded into transport vehicle to extraneous electric signal---on the light wave, realize the light transmission of signal, the device of wherein realizing the signal loading function is exactly a modulator.Difference according to modulation principle has electrooptical modulation, acoustooptic modulation, magneto-optic modulation etc.Wherein since electrooptical modulation to have speed fast, advantage such as realizations is subjected to paying attention to greatly and application widely easily.Electrooptical modulation can be divided into linear electrooptic modulation and secondary electrooptical modulation according to the different qualities that utilizes material.
The electrooptical modulation principle is to utilize electrooptical effect.Under the effect of electric field, the refractive index of material can change outside, thereby causes the change of transmission light state, electrooptical effect that Here it is.When the change of refractive index and external electric field intensity are linear relationship, claim linear electro-optic effect, be the Pockels effect again.And linear electro-optic effect can only be present in the non-centrosymmetrical material.When the change of refractive index and electric field are quadratic relationship, claim quadratic electro-optical effect, be the Kerr effect again, it does not exist only in the non-centrosymmetrical material, is present in the centrosymmetric material yet.Modulator in the market utilizes the manufacturing of linear electrooptic characteristic mostly, and for organic polymer, destruction center's symmetry, and polymkeric substance need experience polarization process, makes the chromophore molecule orientation in the organic polymer, rearranges.People such as C.B.Rider are at " Applied Physics Letters " 1991,70 (1): utilize organic polymer to demonstrate the reflection-type electrooptical modulation as electrooptical material among the 29-31, its principle is: the catoptrical intensity of utilizing the linear electro-optic effect change attenuated total reflection of polarization organic polymer.Yet utilize linear electro-optic effect mainly to exist some problems: the electric light organic polymer instability after 1. polarizing, chromophoric relaxation is kept away unavoidable, and electrooptical coefficient can reduce, thereby influences modulation effect; 2. because the linear electro-optic coefficient of material is the characteristic of material itself, improve electrooptical coefficient, can only be by seeking big a kind of approach of electrooptical coefficient material.3. change when environment,, can aggravate chromophoric relaxation, destroy non-centrosymmetry, reduce electrooptical coefficient as overheated etc.
Summary of the invention
The objective of the invention is to above-mentioned deficiency at prior art, a kind of method and apparatus that transmission light is carried out electrooptical modulation based on three rank electrooptical materials is provided, utilize quadratic electro-optical effect that light signal is modulated, overcome because polarization causes non-centrosymmetrical relaxation problem, and under the condition that does not improve input signal power, improve modulation efficiency, apparatus structure is simple, and is easy to make, with low cost.
For realizing such purpose, the present invention adopts the attenuated total reflection principle, utilize rising edge or the negative edge relatively responsive character of emergent light intensity at attenuated total reflection spectrum, the transmission light intensity is modulated, adopted three rank electro-optical characteristics and reflection-type attenuated total reflection structure in the electro-optic modulation arrangement of design.In general, only apply a transmission signals on three rank electrooptical materials, what obtain is the harmonics signal.Yet, on transmission signals, merge a big Dc bias, theoretical and experiment all shows, the original signal that still can obtain modulating, and can amplify modulated signals, and the secondary harmonics can be ignored because amplitude is very little, thereby can realize the electrooptical modulation to transmitting optical signal.
Apparatus of the present invention comprise modulator and input matching circuit, and the composition of modulator comprises five levels, from top to bottom is followed successively by: coupling prism, electrode of metal, three rank organic polymer ducting layer, separation layer and metal bottom electrode.The Dc bias end of input matching circuit is connected to electrode of metal through protective resistance, and the modulation signal input end is connected to top electrode through coupling capacitance, and the ground wire of input matching circuit connects the bottom electrode of modulator.
The thickness of each thin layer of modulator is regulated in design, makes the attenuated total reflection spectral width of modulator narrow as far as possible, and the degree of depth is dark as far as possible.The thickness span of each layer is respectively: electrode of metal is 20 to 500nm, and ducting layer is 1.0 to 50.0 μ m, and separation layer is 1 to 5 μ m, and the metal bottom electrode is 50 to 500nm.
The effect of separation layer is to prevent from may puncture ducting layer when the splash-proofing sputtering metal bottom electrode and make the upper/lower electrode conducting, when the thickness of ducting layer during greater than 2 μ m, reduces the power of sputter, equally also can not puncture ducting layer, and modulator can be established separation layer.
Based on said apparatus, can utilize rising edge or the falling edge of emergent light intensity at attenuated total reflection spectrum, to because the three rank refractive index polymers that quadratic electro-optical effect causes change relatively more responsive character, the transmission light intensity is carried out electrooptical modulation.Concrete grammar is: apply a bigger Dc bias on the Dc bias end of input matching circuit, on the modulation signal input end, apply a less relatively modulating input signal, the operating angle of modulator is selected in the middle of the rising edge or negative edge of attenuated total reflection spectrum, Dc bias and modulating input signal are applied on the three rank organic polymer ducting layer simultaneously, the refractive index that the electric field that utilizes Dc bias and modulating input signal to provide changes three rank organic polymer ducting layer changes the reflectivity at operating angle place, and then realizes the modulation to intensity of reflected light.
The present invention utilizes secondary electric light principle, using a little modulation signal to be added on the big Dc bias to carry out with the refractive index that changes the secondary electro-optical medium by match circuit modulates the light intensity of transmission light, the range of linearity that utilizes the rising of attenuated total reflection spectral line of this device or negative edge is as operating angle, the amplitude of output signal can be improved by improving Dc bias voltage, thereby the power of input signal can be reduced.Apparatus of the present invention have modulation band-width height, loss and the insertion loss is little, driving power is little, manufacture craft is simple, with low cost advantage, avoid the thermal stability of linear organic polymer electro-optical device and the problem of relaxation simultaneously, can be used for photoelectric communication and optical information processing field.
Description of drawings
Fig. 1 is apparatus of the present invention structural representation.
Among Fig. 1,1 is the coupling prism, and 2 is electrode of metal, and 3 is three rank organic polymer ducting layer, and 4 is separation layer, and 5 is the metal bottom electrode, and 6 is input matching circuit, and R is a protective resistance, and C is a coupling capacitance, and α is an operating angle.
Fig. 2 chooses attenuated total reflection curve under the situation for device operating angle in the embodiment of the invention 1.
Fig. 3 is the electrooptical modulation design sketch of the embodiment of the invention 1.
Fig. 4 does not adopt the structural representation of separation layer for apparatus of the present invention.
Embodiment
Below in conjunction with accompanying drawing technical scheme of the present invention is further described.
Apparatus of the present invention structure comprises modulator and input matching circuit 6 as shown in Figure 1, and the composition of modulator comprises five levels, from top to bottom is followed successively by: coupling prism 1, electrode of metal 2, three rank organic polymer ducting layer 3, separation layer 4 and metal bottom electrodes 5.Match circuit is made of protective resistance R, coupling capacitance C; the Dc bias end A of input matching circuit 6 is connected to electrode of metal 2 through protective resistance R; modulation signal input end B is connected to top electrode 2 through coupling capacitance C, and the ground wire of input matching circuit connects the bottom electrode 5 of modulator.
The preparation process of modulator is followed successively by: utilize sputtering method plating coupling layer as electrode of metal 2 on coupling prism 1, utilization is revolved the glue method coat three rank organic polymer ducting layer 3 on electrode of metal 2, utilize again and revolve the glue method and on ducting layer, coat separation layer 4, at last on separation layer 4 with the sputtering method metal-coated films as metal bottom electrode 5.The thickness of each thin layer of modulator is regulated in design, makes the attenuated total reflection spectral width of modulator narrow as far as possible, and the degree of depth is dark as far as possible.The thickness span of each layer is respectively: electrode of metal 2 is 20 to 500nm, and ducting layer 3 is 1.0 to 50.0 μ m, and separation layer 4 is 1 to 5 μ m, and metal bottom electrode 5 is 50 to 500nm.
Linearly polarized photon---carrier wave light, not with any information---the side by coupling prism 1 is incided on the electrode of metal 2, reflex to another side of coupling prism 1 again via electrode of metal 2, Dc bias end A at input matching circuit applies a big Dc bias, on modulation signal input end B, apply a less relatively input signal, Dc bias and input signal are applied to the refractive index that changes three rank organic polymer ducting layer on the ducting layer simultaneously, and then the output intensity of accommodation reflex light.Wherein protective resistance R plays a protective role, and coupling capacitance C plays isolated DC.
Method by the measurement of m-line, determine the attenuated total reflection spectrum of this electro-optic modulation arrangement, can obtain a series of attenuated total reflection absorption peak and corresponding angle, from spectrum, choose a narrow absorption peak, choose this absorption peak again and rise (or decline), after applying Dc bias and modulation signal on this modulating device, observe the modulation amplitude of output light along the operating angle of corresponding angle as this modulating device, finely tune incident angle, make the light signal modulation amplitude maximum of output.Improve the voltage of Dc bias, can increase the modulation amplitude of output signal, thereby can reduce the power of input signal.
Described electrode of metal 2 can be selected metals such as gold, silver, aluminium, platinum for use, requires in the wavelength coverage at carrier wave light place real part of permittivity less than 0; The imaginary part of specific inductive capacity is as far as possible little, is generally less than 20.
Described three rank organic polymer ducting layer 3 can be isotropy or anisotropy, and the secondary electrooptical coefficient that adopts material is greater than 10
-19(m/V)
2, also can select the big mineral crystal film of secondary electrooptical coefficient for use.
In one embodiment of the invention, adopt the electro-optic modulation arrangement of structure shown in Figure 1.Device parameter is in the device: the refractive index of coupling prism 1 is 1.78, electrode of metal 2 is golden film, and thickness is 39 nanometers, specific inductive capacity be ε=-20+1.5i, organic polymer ducting layer 3 adopts polyimide, thickness is 6.5 microns, and refractive index is 1.616, and separation layer 4 is a polymethylmethacrylate, thickness is 2 microns, refractive index is 1.48, and substrate layer 5 is golden film, and thickness is 100 nanometers.Resistance R is 2000000 Ω, and capacitor C is 100 μ F, and the voltage that applies at the Dc bias end is 1000V.
In Fig. 2, show the position of the operating angle of selection.Operating angle is selected in the place, centre position of the negative edge of attenuated total reflection spectrum, and the curve linear degree is better herein, and the absolute value of slope is big, helps modulation.
In Fig. 3, top curve is the electric signal that is applied on the modulation signal input end B, and following surface curve changes for the light intensity of modulation back reflection light.From scheming to go up us as can be seen, the modulation signal that catoptrical light intensity changes with modulation signal input part B input is consistent, and can realize the modulation to light intensity, can satisfy the requirement of communication aspects to modulator.
Modulator in apparatus of the present invention also can not adopt separation layer, and as shown in Figure 4, the composition of modulator from top to bottom is followed successively by: coupling prism 1, electrode of metal 2, three rank organic polymer ducting layer 3 and metal bottom electrodes 5.Principle of work is with there being separation layer the same, and unique difference is, do not had the dividing potential drop effect of separation layer, and all voltage all is applied on the ducting layer, more can improve the electric signal service efficiency of modulation signal input end B.
Claims (4)
1; a kind of device that transmission light is carried out electrooptical modulation based on three rank electrooptical materials; it is characterized in that comprising modulator and input matching circuit; the composition of modulator from top to bottom is followed successively by: coupling prism (1); electrode of metal (2); three rank organic polymer ducting layer (3); separation layer (4) and metal bottom electrode (5); the Dc bias end (A) of input matching circuit is connected to electrode of metal (2) through protective resistance (R); modulation signal input end (B) is connected to top electrode (2) through coupling capacitance (C), and the ground wire of input matching circuit connects the bottom electrode (5) of modulator.
2, based on three rank electrooptical materials transmission light is carried out the device of electrooptical modulation according to claim 1, the thickness span that it is characterized in that described each layer of modulator is respectively: electrode of metal (2) is 20 to 500nm, three rank organic polymer ducting layer (3) are 1.0 to 50.0 μ m, separation layer (4) is 1 to 5 μ m, and metal bottom electrode (5) is 50 to 500nm.
3, according to claim 1 or 2 based on three rank electrooptical materials transmission light is carried out the device of electrooptical modulation, it is characterized in that described modulator do not establish separation layer (4).
4, a kind of device that utilizes claim 1 carries out the method for electrooptical modulation, it is characterized in that: on the Dc bias end (A) of input matching circuit, apply Dc bias, on modulation signal input end (B), apply a modulating input signal that relative Dc bias is less, the operating angle of modulator is selected in the middle of the rising edge or negative edge of attenuated total reflection spectrum, Dc bias and modulating input signal are applied on the three rank organic polymer ducting layer (3) simultaneously, the refractive index that the electric field that utilizes Dc bias and modulating input signal to provide changes three rank organic polymer ducting layer changes the reflectivity at operating angle place, and then realizes the modulation to intensity of reflected light.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009030071A1 (en) * | 2007-09-06 | 2009-03-12 | National Center For Nanoscience And Technology, China | Wave-guide coupling spr sensor chip and sensor chip array thereof |
| CN103558697A (en) * | 2013-10-30 | 2014-02-05 | 上海飞机制造有限公司 | Electro-optical modulation device used for laser energy modulation in laser pulse shot blasting technology |
| CN105466888A (en) * | 2015-12-31 | 2016-04-06 | 哈尔滨工业大学 | Device for measuring liquid refraction index under external electric field |
| CN105572073A (en) * | 2015-12-31 | 2016-05-11 | 哈尔滨工业大学 | Method for measuring refractive index of liquid under applied electric field condition |
-
2006
- 2006-03-16 CN CNA2006100247245A patent/CN1818742A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009030071A1 (en) * | 2007-09-06 | 2009-03-12 | National Center For Nanoscience And Technology, China | Wave-guide coupling spr sensor chip and sensor chip array thereof |
| CN103558697A (en) * | 2013-10-30 | 2014-02-05 | 上海飞机制造有限公司 | Electro-optical modulation device used for laser energy modulation in laser pulse shot blasting technology |
| CN105466888A (en) * | 2015-12-31 | 2016-04-06 | 哈尔滨工业大学 | Device for measuring liquid refraction index under external electric field |
| CN105572073A (en) * | 2015-12-31 | 2016-05-11 | 哈尔滨工业大学 | Method for measuring refractive index of liquid under applied electric field condition |
| CN105466888B (en) * | 2015-12-31 | 2018-05-18 | 哈尔滨工业大学 | The device of liquid refractivity is measured under the conditions of a kind of extra electric field |
| CN105572073B (en) * | 2015-12-31 | 2018-05-18 | 哈尔滨工业大学 | A kind of method that liquid refractivity is measured under the conditions of extra electric field |
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