CN1818739A - Deformative reflector - Google Patents
Deformative reflector Download PDFInfo
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- CN1818739A CN1818739A CN 200610018567 CN200610018567A CN1818739A CN 1818739 A CN1818739 A CN 1818739A CN 200610018567 CN200610018567 CN 200610018567 CN 200610018567 A CN200610018567 A CN 200610018567A CN 1818739 A CN1818739 A CN 1818739A
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- silicon fiml
- electrode
- transparency electrode
- deformable mirror
- minute surface
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Abstract
A variable reflector consists of driving electrode and silicon film .It is featured as setting driving electrode below silicon film, applying 35-45 mu m as distance between driving electrode and silicon film, setting transparent electrode above silicon film and using 6575 mu m as distance between transparent electrode and silicon film, fixing silicon film and transparent electrode separately on mirror surface support and fix-connecting said driving electrode to mirror surface support through supporting column .
Description
Technical field
The present invention relates to a kind of distorting lens of ADAPTIVE OPTICS SYSTEMS.
Background technology
Typical ADAPTIVE OPTICS SYSTEMS is to use Wavefront sensor 2 to survey incident light wave 1 front-distortion, sends control signal by controller to wavefront correction equipment then, and the action of control minute surface (distorting lens) 3 makes minute surface generation deformation.When mirror shape satisfied phase conjugation and concerns with the distortion phase place, distortion will be cancelled, thereby wavefront is restored, and imaging (CCD) 4 resolution are improved.Shown in Figure 1 is a typical adaptive optics structural drawing.The ability of surface deformation and frequency characteristic affect the performance of whole optical system.
Distorting lens is the critical component of ADAPTIVE OPTICS SYSTEMS, and American I tek company begins to develop distorting lens at first and succeeded in developing first 21 whole unit piezoelectric deforming mirror in 1973.France Laserdot company succeeded in developing 52 discrete units formula piezoelectric deforming mirrors and offered European Southern Observatory and uses the eighties.China's this respect is started late, photoelectricity research institute of the Chinese Academy of Sciences succeeded in developing 19 discrete units formula piezoelectric deforming mirrors and is applied to be described as the nuclear fusion optical system of " refreshing light " in 1986, this is the wavefront error that first distorting lens is applied to calibration of laser nuclear fusion optical system in the world at once.
Yet traditional piezoelectric type, electromagnetic type, cost height such as fluid pressure type, the driving voltage height, volume is big, and drive electrode is few, and deflection is little, and main shortcoming normally can only produce the deformation of a direction.
Summary of the invention
The object of the present invention is to provide a kind of strong deformable mirror of wavefront ability of proofreading and correct.
To achieve these goals, technical scheme of the present invention is: deformable mirror, and it comprises drive electrode and silicon fiml, it is characterized in that: drive electrode 7 is positioned at the below of silicon fiml 6, and the spacing between drive electrode 7 and the silicon fiml 6 is 35-45 μ m; The top of silicon fiml 6 is provided with transparency electrode 5, and the spacing between transparency electrode 5 and the silicon fiml 6 is 65-75 μ m; Silicon fiml 6, transparency electrode 5 fix with minute surface support 8 respectively, and drive electrode 7 is fixedlyed connected with minute surface support 8 by support column 9.
The number of electrode is 32-300 in the array of described drive electrode 7.
The present invention adopts the top of silicon fiml 6 to be provided with transparency electrode 5, it can order about silicon fiml 6 produce near or away from two kinds of deformation of drive electrode, thereby can better control the deformation of mirror film, greatly improve the ability of proofreading and correct wavefront.
The present invention has following characteristics:
1, silicon fiml 6 is isolated fully with drive electrode, has saved loaded down with trivial details bonding process.
2, after the introducing transparency electrode, greatly improved the performance of modification mirror.
3, the aperture that designs in the making of transparency electrode reduces to minimum to the negative effect of air.
4, adopt the static driven mode, at the bottom of the static driven energy consumption and the response frequency height.
Description of drawings
Fig. 1 is a typical adaptive optics structural drawing
Fig. 2 is a structure principle chart of the present invention
Fig. 3 is a structural representation of the present invention
Fig. 4 is a transparent electrode structure synoptic diagram of the present invention
Fig. 5 is minute surface of the present invention and minute surface support processing technology figure
Fig. 6 is one of surface configuration of minute surface of the present invention figure
Fig. 7 is two figure of the surface configuration of minute surface of the present invention
Fig. 8 is the graph of relation of deformation of the present invention and voltage
Fig. 9 is one of relation curve of voltage and deformation under 3 kinds of different original states of the present invention figure
Figure 10 is two figure of the relation curve of voltage and deformation under 3 kinds of different original states of the present invention
Among the figure: 1-incident light wave, 2-Wavefront sensor, 3-minute surface, 4-imaging, 5-transparency electrode, 6-silicon fiml, 7-drive electrode, 8-minute surface support, 9-support column.
Embodiment
As Fig. 2, shown in Figure 3, deformable mirror, it comprises drive electrode 7, transparency electrode 5 and silicon fiml 6, and drive electrode 7 is positioned at the below of silicon fiml 6, and the spacing between drive electrode 7 and the silicon fiml 6 is 35-45 μ m; The top of silicon fiml 6 is provided with transparency electrode 5, and the spacing between transparency electrode 5 and the silicon fiml 6 is 65-75 μ m; The edge of silicon fiml 6 and minute surface support 8 fix (silicon fiml 6 with minute surface support 8 also can be made of one), and the edge of transparency electrode 5 and minute surface support 8 fix (bonding), and drive electrode 7 is fixedlyed connected (bonding) by support column 9 with minute surface support 8.During use, transparency electrode 5 is positioned at the incident direction of light.
The number of electrode is 32-300 in the array of described drive electrode 7.
1, the structural design of deformable mirror: as shown in Figure 2,
The electromotive force of transparency electrode band is V
T, the electromotive force of silicon fiml band is V
M, below driving electrode array overall potential is V
A, the electromotive force of wherein single drive electrode is v
ElectrodeSilicon fiml is respectively d to the distance of transparency electrode and drive electrode
T, d
AThe number of poles of driving electrode array is many more, can better control the shape of minute surface more, but because the restriction of manufacture craft, the number of poles of the driving electrode array that the present invention adopts is 256.The final structure of determining is such:
The structure of table 1 deformable mirror
| Minute surface (being silicon fiml 6) thickness | 10μm |
| The minute surface radius | 16mm |
| The spacing of minute surface and transparency electrode | 65-75μm |
| The spacing of minute surface and driving electrode array | 35-45μm |
| The number of electrode in the driving electrode array | 256 |
| The size of electrode in the driving electrode array | 400×400μm |
| The spacing of electrode in the driving electrode array | 150μm |
2, the making of deformable mirror:
Deformable mirror be manufactured with two key components: the one, produce quite thin silicon fiml, stress that silicon fiml just can be very little and the toughness deformation that is more conducive to silicon fiml like this; The 2nd, produce the transparency electrode of the high conduction of projection ratio in the incident direction of light.
2.1 the making of silicon fiml:
In order to make minute surface obtain favorable surface quality and less stress, select for use silicon-on-insulator (SOI) wafer that 4inch do not mix as material of main part, itself has composite structure SOI, shown in Fig. 5 (a), it comprises the thick silicon fiml of one deck 10 μ m, the thick buried oxide layer of 1 μ m, the thick monocrystalline silicon of 525 μ m.At first the monocrystalline silicon of the superiors is polished into the thickness of 250 μ m, being coated with the last layer photoresist then above it is that follow-up photoetching is prepared, again SOI below thermal oxide generate the protection oxide layer shown in Fig. 5 (b).Next carry out the photoetching first time and KOH corrosion, the diameter of corrosion is 16mm, and the degree of depth is up to buried oxide layer, as Fig. 5 (c).Photoetching for the second time determines to support height (70-75 μ m), the width (18mm) of transparency electrode shelf with corrosion, and removes photoresist such as Fig. 5 (d).Then peel off oxide layer such as Fig. 5 (e) of silicon fiml both sides with 7: 1 FH solution; The thickness of silicon fiml 6 is 10 μ m.
Also need at last can make silicon fiml increase electric conductivity like this, can improve reflectivity again, also can keep the flatness of silicon fiml simultaneously at the thick aluminium film of lower surface sputter one deck 0.5 μ m of silicon fiml.The stress of aluminium film depends on the thickness of aluminium film, and the variation of simultaneous temperature also can exert an influence by counter stress, so this procedure carries out behind silicon fiml and drive electrode bonding, and temperature can not surpass 70 degree in wire bonds after this and the encapsulation process.
3.1 the making of transparency electrode:
The electrostatic force that transparency electrode produces can make silicon fiml produce distortion upwards.Here select for use Borofloat (float glass process Pyrex) glass as material of main part, because this material is high especially for the visible light wave reflection rate of 300-800nm, the thickness after the polishing is 170 μ m, and diameter is 17mm.Covering one deck anti-reflection film above the Borofloat glass [does not have the certain material requirement, as selects magnesium fluoride (MgF for use
2)] thickness 100nm, Borofloat lower glass surface sputter one deck can conduct electricity and tin indium oxide (ITO) layer of fine light transmission can be arranged, and the thickness of indium tin oxide layer does not have particular requirement, and the diameter of indium tin oxide layer is 14mm.
Design the air vent of 4 diameter 1mm at the position that keeps to the side of transparency electrode, these 4 air vents can connect the air of transparency electrode both sides, so just avoid after encapsulation air resistance to the negative effect of minute surface response frequency, utilized epoxy adhesive to connect ITO layer and external circuit lead simultaneously.This operation can be finished at the inwall of these air vents.Accomplish that silicon fiml and transparency electrode insulate fully, the part that the transparency electrode edge contacts with the minute surface support can not be covered by ITO, as shown in Figure 4, is the vertical view of transparency electrode.
As shown in Figure 3, the top of drive electrode is the support column made from polyimide.Silicon fiml 6 is 35-45 μ m with the distance of driving electrode array.Diameter be the electrod-array of 10mm integrated as 256 electrodes of tile symmetry tiling, each electrode is the wide squares of 400 μ m, the interelectrode 150 μ m that are spaced apart.
3.2 encapsulation and driving:
Because driving electrode array does not contact with silicon fiml, therefore saved complicated bonding process.Assembling finish in the rear drive electrod-array 256 electrodes by automatic connection box and one than large tracts of land (4cm
2) ceramic needle-like grid array link to each other.The needle-like grid array can constitute a decoding scheme.16 transmission lines of 16 passages are received computer via high pressure-D/A transition card.Drive software is write by c++ and Tcl.Encapsulation can be carried out under open normal pressure.Can add certain voltage for any electrode by computing machine like this, the voltage of transparency electrode be by independent continuously adjustable voltage source control in addition.
4, performance test
When the different electrodes in giving driving electrode array applied certain voltage, deformation will take place in minute surface.Use Michelson interferometer and precise jiggle platform to test to the static properties of minute surface, deformation along with minute surface, the striped that Michelson interferometer comes out also will change as Fig. 6, Fig. 7, support the moving of micromotion platform of minute surface by control, make interference pattern return to original position, this moment, the displacement of micromotion platform was the deflection of distorting lens.Also can obtain the surface configuration of silicon fiml by means of the graceful interferometer of Thailand and ZYGO software.
4.1 determining of initial voltage:
Silicon fiml can the maintenance level when at first to study initial voltage be much.Can guarantee to work as the electromotive force V of silicon fiml two lateral electrodes by manufacture craft
T, V
ASilicon fiml can the maintenance level when being zero, as long as | V
T-V
M| with | V
A-V
M| keep variation in proportion, silicon fiml also can keep level, therefore to the ceiling voltage of single electrode without limits.Research separately now | V
T-V
M| with the relation of deformation quantity (μ m), this moment V
A=0, V
M=0, in their relation curve such as Fig. 8
The curve that is linked to be, and V
A(V
T=0, V
M=0) with the relation of deformation such as the curve that Fig. 8 " zero " is linked to be.Ordinate among Fig. 8 is represented deformation, and horizontal ordinate is represented voltage.As seen for onesize voltage, the downward deformation that transparency electrode generation deformation ratio driving electrode array upwards produces is little, and wants to keep the level of silicon fiml | V
T-V
M| with | V
A-V
M| ratio should be 1.70.There is a less maximum value in the voltage that is added on the driving electrode array, and this extreme voltage is 11 volts as can be seen from Fig. 8, and the whole maximum downward deformation quantity of corresponding silicon fiml is 14 μ m.When voltage during greater than this extreme voltage silicon fiml and drive electrode just can inhale together.This maximum deformation quantity should be
Thereby can release d
A=3*14=42 μ m.D as can be known
T=1.70*42 is about 72 μ m.
, generally at first apply 8.6 volts bias voltage and make silicon fiml be in the bias state of-7 μ m, the deformation that so just might produce both direction also as can be seen when only separately using drive electrode from Fig. 8 to silicon fiml.
4.2 center deformation and initial voltage:
In order to test the static properties of distorting lens, give four electrode application voltage v in center of driving electrode array
ElectrodeFig. 9, Figure 10's v under three kinds of different original states have drawn
ElectrodeAnd the relation between the largest deformation amount of minute surface center.The ordinate of figure is represented the deformation of modification mirror center with respect to original state, the deformation that makes progress (near transparency electrode) on the occasion of, downward deformation (away from transparency electrode) is negative value.The horizontal ordinate of figure is represented the voltage variety of four electrodes in center with respect to driving electrode array integral body.
The curve representation v that " * " number is linked to be among Fig. 9, Figure 10
T=0, v
M=0, v
AThe original state of=8.6V, this moment, silicon fiml was in the bias state of-7 μ m.The curve representation that "+" number is linked to be | v
T-v
M|=17V, | v
A-v
M| the original state of=10V, this moment, silicon fiml was in horizontal original state.The curve representation that " g " number is linked to be | v
T-v
M|=13V, | v
A-v
M|=22.1V silicon fiml is in the original state of level.
By Fig. 9, Figure 10 as can be known, when the initial voltage that changes the silicon fiml both sides, the deformation nature of silicon fiml also changes.For fixing deformation quantity requirement, introduce transparency electrode after required Δ Voltage much smaller, thereby introduce the easier generation deformation of minute surface after the transparency electrode as can be known.After introducing transparency electrode as can be known in conjunction with Fig. 8, rely on to change initial voltage, can obtain+the center largest deformation of 5 μ m, big many of this deformation that obtains than independent use drive electrode.
The dynamic property of distorting lens also needs further test.Can estimate, because the very little stress and the good toughness of silicon fiml make it can satisfy the requirement of general environment lower frequency.
Being applied to the voltage silicon fiml of ratio in silicon fiml two lateral electrodes as can be known by above analysis can the maintenance level.When four electrodes in driving electrode array center are used as an integral body, apply certain voltage, the distorting lens of this band transparency electrode can produce the largest deformation of-14 μ m under less driving voltage, also can produce+deformation of 5 μ m even bigger.The variation range that is to say distorting lens can reach 19 μ m, and this has greatly changed the performance of distorting lens.Test result shows that the introducing of the transparency electrode that transmissivity is high does not cause interference, and the design of the aperture of transparency electrode periphery has greatly improved the frequency response characteristic of transmitting mirror.
Claims (7)
1. deformable mirror, it comprises drive electrode and silicon fiml, it is characterized in that: drive electrode (7) is positioned at the below of silicon fiml (6), and the spacing between drive electrode (7) and the silicon fiml (6) is 35-45 μ m; The top of silicon fiml (6) is provided with transparency electrode (5), and the spacing between transparency electrode (5) and the silicon fiml (6) is 65-75 μ m; Silicon fiml (6), transparency electrode (5) fix with minute surface support (8) respectively, and drive electrode (7) is fixedlyed connected with minute surface support (8) by support column (9).
2. deformable mirror according to claim 1 is characterized in that: the number of electrode is 32-300 in the array of described drive electrode (7).
3. deformable mirror according to claim 1 is characterized in that: the lower surface sputter of described silicon fiml has the thick aluminium film of one deck 0.5 μ m.
4. deformable mirror according to claim 1 is characterized in that: the thickness of described silicon fiml is 10 μ m.
5. deformable mirror according to claim 1 is characterized in that: the described transparency electrode position that keeps to the side is provided with air vent.
6. deformable mirror according to claim 1, it is characterized in that: described transparency electrode mainly is made of Borofloat glass, anti-reflection film and indium tin oxide layer, top covering one deck anti-reflection film of Borofloat glass, the lower surface sputter indium oxide layer tin layer of Borofloat glass.
7. deformable mirror according to claim 6 is characterized in that: the thickness of described Borofloat glass is that 170 μ m, diameter are 17mm; The thickness of anti-reflection film is 100nm; The diameter of indium tin oxide layer is 14mm.
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| CNB2006100185677A CN100434963C (en) | 2006-03-16 | 2006-03-16 | Deformative reflector |
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| CNB2006100185677A CN100434963C (en) | 2006-03-16 | 2006-03-16 | Deformative reflector |
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| CN100434963C CN100434963C (en) | 2008-11-19 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100549753C (en) * | 2007-05-29 | 2009-10-14 | 中国科学院光电技术研究所 | ADAPTIVE OPTICS SYSTEMS based on self-reference wavefront sensor and continuous surface deformable mirror |
| CN102147524A (en) * | 2010-02-10 | 2011-08-10 | 中国科学院大连化学物理研究所 | Curvature-variable reflector device |
| CN103364944A (en) * | 2013-07-17 | 2013-10-23 | 清华大学 | Boundary temperature control array type wavefront control device and manufacturing method thereof |
| CN105676448A (en) * | 2016-04-14 | 2016-06-15 | 成都信息工程大学 | Focusing micro-mirror and focusing device |
| CN109270681A (en) * | 2018-11-19 | 2019-01-25 | 宁波大学 | A kind of transmission-type piezoelectric deforming mirror |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4311782B2 (en) * | 1998-03-05 | 2009-08-12 | オリンパス株式会社 | Optical device |
| JP2001307366A (en) * | 1999-08-02 | 2001-11-02 | Matsushita Electric Ind Co Ltd | Optical pickup device |
| JP2004163551A (en) * | 2002-11-12 | 2004-06-10 | Olympus Corp | Image pickup device and its control method |
| JP2005092175A (en) * | 2003-08-08 | 2005-04-07 | Olympus Corp | Variable optical-property optical element |
| CN1304872C (en) * | 2003-12-25 | 2007-03-14 | 华中科技大学 | Silicon base deformable reflector and its producing method |
-
2006
- 2006-03-16 CN CNB2006100185677A patent/CN100434963C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100549753C (en) * | 2007-05-29 | 2009-10-14 | 中国科学院光电技术研究所 | ADAPTIVE OPTICS SYSTEMS based on self-reference wavefront sensor and continuous surface deformable mirror |
| CN102147524A (en) * | 2010-02-10 | 2011-08-10 | 中国科学院大连化学物理研究所 | Curvature-variable reflector device |
| CN103364944A (en) * | 2013-07-17 | 2013-10-23 | 清华大学 | Boundary temperature control array type wavefront control device and manufacturing method thereof |
| CN103364944B (en) * | 2013-07-17 | 2016-02-24 | 清华大学 | Boundary temperature control array type wavefront control device and manufacture method thereof |
| CN105676448A (en) * | 2016-04-14 | 2016-06-15 | 成都信息工程大学 | Focusing micro-mirror and focusing device |
| CN105676448B (en) * | 2016-04-14 | 2018-12-11 | 成都信息工程大学 | A kind of focusing micro mirror and a kind of focus control |
| CN109270681A (en) * | 2018-11-19 | 2019-01-25 | 宁波大学 | A kind of transmission-type piezoelectric deforming mirror |
| CN109270681B (en) * | 2018-11-19 | 2024-03-22 | 宁波大学 | Transmission type piezoelectric deformable mirror |
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| CN100434963C (en) | 2008-11-19 |
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Granted publication date: 20081119 |