CN1811944B - Semiconductor probe with resistive tip and method of fabricating the same - Google Patents
Semiconductor probe with resistive tip and method of fabricating the same Download PDFInfo
- Publication number
- CN1811944B CN1811944B CN2005101345166A CN200510134516A CN1811944B CN 1811944 B CN1811944 B CN 1811944B CN 2005101345166 A CN2005101345166 A CN 2005101345166A CN 200510134516 A CN200510134516 A CN 200510134516A CN 1811944 B CN1811944 B CN 1811944B
- Authority
- CN
- China
- Prior art keywords
- impurity
- resistive
- dielectric layer
- electrode areas
- resistive tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/16—Probe manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02M—SUPPLYING COMBUSTION ENGINES IN GENERAL WITH COMBUSTIBLE MIXTURES OR CONSTITUENTS THEREOF
- F02M29/00—Apparatus for re-atomising condensed fuel or homogenising fuel-air mixture
- F02M29/04—Apparatus for re-atomising condensed fuel or homogenising fuel-air mixture having screens, gratings, baffles or the like
- F02M29/06—Apparatus for re-atomising condensed fuel or homogenising fuel-air mixture having screens, gratings, baffles or the like generating whirling motion of mixture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02M—SUPPLYING COMBUSTION ENGINES IN GENERAL WITH COMBUSTIBLE MIXTURES OR CONSTITUENTS THEREOF
- F02M37/00—Apparatus or systems for feeding liquid fuel from storage containers to carburettors or fuel-injection apparatus; Arrangements for purifying liquid fuel specially adapted for, or arranged on, internal-combustion engines
- F02M37/0047—Layout or arrangement of systems for feeding fuel
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
- G01Q70/14—Particular materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1409—Heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q80/00—Applications, other than SPM, of scanning-probe techniques
Abstract
The invention provides a semi-conductor probe which is provided with a resistive point and a method for manufacturing the semi-conductor probe. The resistive point which is mixed with a first impurity comprises a resistive area which is formed on the top portion of the resistive point and is lightly mixed with a second impurity, wherein the polarity of the second impurity is opposite to the first impurity, a first semi-conductor electrode area and a second semi-conductor electrode area which are formed on the oblique lateral face of the resistive point and are heavily mixed with the second impurity. The semi-conductor probe comprises a resistive point, a suspension arm, and the resistive point is arranged on the end portion of the suspension arm, a dielectric layer which is arranged on the suspension arm and covers the restrictive area, and a metal mask which is arranged on the dielectric layer and is provided with an opening which is formed on the position which is corresponded with the resistive area. Thereby space resolution factor of the semi-conductor probe is improved.
Description
Technical field
The present invention relates to a kind of semiconductor probe and manufacturing approach thereof with resistive tip; More particularly, the present invention relates to a kind of semiconductor probe and a kind of method of making this semiconductor probe with metallic shield of the resistive region that exposes resistive tip.
Background technology
Because small sized product become more popular such as communication terminal, pocket PC, so to the demand growth of highly integrated non-volatile little recording medium.With existing hard disk miniaturization or the flash memory height is integrated and be not easy.Therefore, after deliberation adopt scan-probe information-storing device as alternative.
Probe is applied in various scanning probe microscopies (SPM) technology.For example; Probe is used for PSTM (STM), atomic force microscope (AFM), magnetic force microscopy (MFM), optical microscope for scanning near field (SNOM) and electrostatic force microscope (EFM); The electric current that the STM detection produces when between probe and sample, applying voltage is with information reproduction; AFM utilizes the atomic force between probe and the sample; MFM utilizes by the magnetic field of sample generation and the reciprocal force between the magnetized probe, and SNOM has overcome the limitation of the resolution that is caused by wavelength of visible light, and EFM is utilized in the electrostatic force between sample and the probe.
In order to adopt such SPM technology at full speed to write down and information reproduction, must detect the surface charge in the zonule that diameter is a tens nanometer with high density.In addition, cantilever is necessary for the form of array, with the speed that improves record and reproduce.
Fig. 1 discloses the resistive tip of disclosed semiconductor probe among No. 03/096409, the WO and the schematic cross sectional view of storage medium in international monopoly.Semiconductor probe is vertically formed on cantilever, and is outstanding from cantilever.Can make the array of semiconductor probe, the manufacture of each semiconductor probe can be the diameter with tens nanometers.
With reference to Fig. 1, the tip 50 of semiconductor probe comprises: body 58 is doped with first impurity; Resistive region 56 is formed on most advanced and sophisticated 50 top, and light dope has second impurity; First semiconductor electrode areas 52 and second semiconductor electrode areas 54 are formed on the prism at tip 50, resistive region 56 is arranged, and heavy doping have second impurity therebetween.Here, if first impurity is p type impurity, then second impurity is n type impurity, and if first impurity is n type impurity, then second impurity is p type impurity.
The intensity of the number affects electric field of the surface charge 57 of recording medium 53.The variation of electric field intensity causes the change of the resistance of resistive region 56.Can detect the polarity and the density of surface charge 57 by the changes in resistance of resistive region.
Though the depleted region 68 of resistive tip 50 does not extend to first semiconductor electrode areas 52 and second semiconductor electrode areas 54, owing to causing the volume of resistive region 56 to reduce as idioelectric depleted region 68.As a result, the resistance of resistive region 56 changes, thereby can detect the polarity and the density of surface charge 57.
Yet in traditional semiconductor probe with resistive tip 50, the semiconductor electrode areas 52 and 54 that is formed on the prism of resistive tip 50 receives the influence of surface charge 57, thereby has reduced the spatial resolution of resistive region 56.
Summary of the invention
The invention provides a kind of semiconductor probe with resistive tip of good spatial resolution.
The invention provides the method for semiconductor probe that a kind of manufacturing has the resistive tip of good spatial resolution.
According to an aspect of the present invention; A kind of semiconductor probe is provided; Comprise that the resistive tip, the resistive tip that are doped with first impurity are positioned at cantilever on its end, cover the dielectric layer of resistive region and be positioned on the dielectric layer and have the metallic shield of the opening that is formed on the position corresponding with resistive region, said resistive tip comprises: resistive region is formed on the top of resistive tip; Light dope has second impurity, and the polarity of second impurity and first impurity is opposite; First semiconductor electrode areas and second semiconductor electrode areas are formed on the prism of resistive tip, and heavy doping has second impurity.
Dielectric layer can be by a kind of the processing of selecting the group of forming from following material: SiO
2, Si
3N
4, ONO, Al
2O
3, type bore carbon (DLC), TiO
2, HfO
2, ZrO
2And NiO.
Metallic shield can be by a kind of the processing of selecting the group of forming from following material: Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IO
2, Ag, W and WC.
Metallic shield is deposited as the thickness of 10nm to 200nm.
According to a further aspect in the invention; A kind of semiconductor probe is provided; This semiconductor probe comprise be doped with that the first impurity resistance property is most advanced and sophisticated, resistive tip is positioned at cantilever on its end, be positioned on the cantilever and cover the dielectric layer of resistive region and be positioned on the dielectric layer and have the metallic shield of the opening that is formed on the position corresponding with resistive region; Said resistive tip comprises: resistive region; Be formed on the top of resistive tip, light dope has second impurity, and the polarity of second impurity and first impurity is opposite; First semiconductor electrode areas and second semiconductor electrode areas are formed on the prism of resistive tip, and heavy doping has second impurity, and wherein, dielectric layer is by a kind of the processing of selecting the group of forming from following material: SiO
2, Si
3N
4, ONO, Al
2O
3, DLC, TiO
2, HfO
2, ZrO
2And NiO, metallic shield is deposited as the thickness of 10nm to 200nm, and metallic shield is by a kind of the processing of selecting the group of forming from following material: Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IO
2, Ag, W and WC.
According to another aspect of the invention; A kind of method of making semiconductor probe is provided; This method comprises: (1) forms the resistive tip that is doped with first impurity on the top surface of substrate, this resistive tip comprises: resistive region is formed on the top of resistive tip; Light dope has second impurity, and the polarity of second impurity and first impurity is opposite; First semiconductor electrode areas and second semiconductor electrode areas are formed on the prism of resistive tip, and heavy doping has second impurity; (2) on substrate, form dielectric layer, the generation type of said dielectric layer is for arriving the end of resistive tip; (3) on dielectric layer, form metallic shield, metallic shield has opening, and this opening is corresponding to the resistive region of resistive tip; (4) basal surface through etch substrate forms cantilever, and the generation type of cantilever is the end that said resistive tip can be positioned at said cantilever.
Step (2) can comprise: on resistive tip, dielectric layer is formed preset thickness; Through chemically mechanical polishing (CMP) with the dielectric layer complanation, thereby make the end of resistive tip and dielectric layer have essentially identical height.
Step (1) can comprise: on the top surface of substrate, form the banded mask layer that is doped with first impurity; Form first semiconductor electrode areas and second semiconductor electrode areas through second impurity that the part that does not have masked layer to cover of substrate is mixed, the polarity of second impurity and first impurity is opposite; Through substrate annealing being reduced the gap between first semiconductor electrode areas and second semiconductor electrode areas, the resistive region of second impurity is arranged along the outside surface formation light dope of first semiconductor electrode areas and second semiconductor electrode areas; The top surface that covers through the mask layer that is not patterned that mask layer is patterned as predetermined shape and etch substrate forms resistive tip.
Description of drawings
Through exemplary embodiment of the present invention being carried out detailed description with reference to accompanying drawing, of the present inventionly above-mentionedly will become more obvious with other characteristics and advantage, wherein:
Fig. 1 discloses the resistive tip of disclosed semiconductor probe among No. 03/096409, the WO and the schematic cross sectional view of storage medium in international monopoly;
Fig. 2 is the schematic cross sectional view of the resistive tip of semiconductor probe according to an embodiment of the invention;
Fig. 3 is the sectional view of amplification of end of resistive tip of the semiconductor probe of Fig. 2;
Fig. 4 is the schematic cross sectional view of the resistive tip of semiconductor probe according to another embodiment of the present invention;
Fig. 5 A to Fig. 5 J is the skeleton view that illustrates according to the sequential steps of the method for the semiconductor probe of the shop drawings 4 of the embodiment of the invention;
Fig. 6 is the sectional view of the probe that uses in the emulation that illustrates the resolution of the resistance-type probe with metallic shield of Fig. 4 and the resolution comparison of the resistance-type probe that does not have metallic shield;
Fig. 7 is the curve map that illustrates when using the probe of Fig. 6 according to the variation of the leakage current of surface charge.
Embodiment
To describe the present invention more fully with reference to accompanying drawing, embodiments of the invention be shown in the accompanying drawing.For clarity, exaggerated the thickness in layer and zone in the drawings.
Fig. 2 is the schematic cross sectional view of the resistive tip of semiconductor probe according to an embodiment of the invention.
With reference to Fig. 2, the resistive tip 150 of semiconductor probe is vertically formed on cantilever 170, and its generation type goes out for the distal process from cantilever 170.Resistive tip 150 comprises: body 158 is doped with first impurity; Resistive region 156 is formed on the top of resistive tip 150, and light dope has second impurity; First semiconductor electrode areas 152 and second semiconductor electrode areas 154 are formed on the prism of resistive tip 150, resistive region 156 is arranged, and heavy doping have second impurity therebetween.Here, when first impurity was p type impurity, second impurity was n type impurity, and when first impurity was n type impurity, second impurity was p type impurity.Dielectric layer 160 sequentially is formed on first semiconductor electrode areas 152 and second semiconductor regions 154 with metallic shield 162.Dielectric layer 160 can be by a kind of the processing of selecting the group of forming from following material: SiO
2, Si
3N
4, oxide-nitride thing-oxide (oxide-nitride-oxide, ONO), Al
2O
3, type bore carbon (DLC), TiO
2, HfO
2, ZrO
2And NiO.
Metallic shield 162 can be by a kind of the processing of selecting the group of forming from following material: Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IO
2, Ag, W and WC.
The generation type of dielectric layer 160 and metallic shield 162 is for exposing resistive region 156.Metallic shield 162 prevents that the part of influence except resistive region 156 of surface charge 57 (see figure 1)s of recording medium 53 (see figure 1)s from being first semiconductor electrode areas 152 and second semiconductor electrode areas 154.Therefore, the resistance of the influence resistive region 156 that produces by surface charge 57, thus can accurately detect the polarity and the density of surface charge by changes in resistance.
Fig. 3 is the sectional view of amplification of end of resistive tip 150 of the semiconductor probe of Fig. 2.
Though the depleted region 168 of resistive tip 150 does not extend to first semiconductor electrode areas 152 and second semiconductor electrode areas 154, owing to causing the volume of resistive region 156 to reduce as idioelectric depleted region 168.As a result, the resistance of resistive region 156 changes, thereby can detect the polarity and the density of surface charge 157.Because the electric field that negative surface charge 157 produces is expanded towards first semiconductor electrode areas 152 and second semiconductor electrode areas 154 so be formed on resistive region 156 outer depleted region 168 gradually.
Simultaneously, metallic shield 162 prevents that influence is formed on first semiconductor electrode areas 152 and second semiconductor electrode areas 154 of resistive region 156 both sides, thereby improves the resolution of resistive tip 150.Yet, owing to the height (about 1 μ m or littler) of resistive tip 150 causes being difficult to use high-resolution imprint lithography to come construction drawing 2 and the metallic shield 162 shown in Fig. 3.
Fig. 4 is the schematic cross sectional view of the resistive tip of semiconductor probe according to another embodiment of the present invention.
With reference to Fig. 4, the resistive tip 250 of semiconductor probe is vertically formed on cantilever 270, and its generation type goes out for the distal process from cantilever 270.Resistive tip 250 comprises: body 258 is doped with first impurity; Resistive region 256 be formed on the top of resistive tip 250, and light dope has second impurity; First semiconductor electrode areas 252 and second semiconductor electrode areas 254 are formed on the prism of resistive tip 250, and laying equal stress on is doped with second impurity.Dielectric layer 260 is formed on the predetermined part of cantilever 270, and its generation type is for covering resistive region 256.Preferably, dielectric layer 260 covers the end of resistive region 256.
Metallic shield 262 is formed on the dielectric layer 260, and its generation type exposes resistive region 256 for having opening 263 through this opening 263.
Dielectric layer 260 can be by a kind of the processing of selecting the group of forming from following material: SiO
2, Si
3N
4, ONO, Al
2O
3, DLC, TiO
2, HfO
2, ZrO
2And NiO.
Metallic shield 262 can be by a kind of the processing of selecting the group of forming from following material: Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IO
2, Ag, W and WC.
The diameter of opening 263 can be about 100nm or littler, and resolution can determine according to diameter.The thickness range of metallic shield 262 can be from 10nm to 200nm.
Because the operation according to the semiconductor probe of the operation of the semiconductor probe of present embodiment and the embodiment shown in Fig. 2 and Fig. 3 shown in Fig. 4 is basic identical, so will not provide its detailed description.
Because the metallic shield 262 according to the semiconductor probe of present embodiment shown in Fig. 4 forms flat on dielectric layer 260, so make more easily than the semiconductor probe of the embodiment shown in Fig. 2 and Fig. 3.That is, even, also can form opening 263 with above-mentioned diameter through known common photolithography in the technical field of manufacturing semiconductors.In addition, when the storage medium that stores surface charge through contact when semiconductor probe comes reading of data, because semiconductor probe is the resistive probe with the metallic shield 262 on plane, so can reduce the pressure that is applied to storage medium.
Fig. 5 A to Fig. 5 J is the skeleton view that illustrates according to the sequential steps of the method for the semiconductor probe of the shop drawings 4 of the embodiment of the invention.
At first; With reference to Fig. 5 A; Mask layer 333 is formed on silicon substrate 331 such as silicon oxide layer or silicon nitride layer or is doped with on the surface of silicon-on-insulator (SOI) substrate of first impurity; Photoresist 335 is coated on the top surface of mask layer 333, and banded subsequently mask 338 is arranged on the top of photoresist 335.
Then, the structure that obtains is made public, is developed and is etched to the formation pattern.With reference to Fig. 5 B; Through the lithoprinting etch process banded mask layer 333a is formed on the substrate 331; The part heavy doping that does not have masked layer 333a to cover of substrate 331 has second impurity, thereby forms first semiconductor electrode areas 332 and second semiconductor electrode areas 334.Because the resistivity of first semiconductor electrode areas 332 and second semiconductor electrode areas 334 is low, so they are as conductor.
Then, through annealing process the width between first semiconductor electrode areas 332 and second semiconductor electrode areas 334 is decreased to the width less than mask layer 333a.With reference to Fig. 5 C; If expansion heavy doping has first semiconductor electrode areas 332 and second semiconductor electrode areas 334 of second impurity; Then second diffusion of contaminants arrives the part of being close to heavily doped first semiconductor electrode areas 332 and second semiconductor electrode areas 334, thereby forms the resistive region 336 that light dope has second impurity.Resistive region 336 below mask layer 333a contacts with each other and forms the point formation portion of resistive tip.Point formation portion can form in thermal oxidation technology, and this will make an explanation following.
Then,, photoresist 339 is coated on the substrate 331 with coverage mask layer 333a, subsequently the photomask 340 of band shape is arranged on the top of photoresist 339, perpendicular to mask layer 333a with reference to Fig. 5 D.With reference to Fig. 5 E, the structure that obtains made public, develop and etching forms photoresist layer 339a, and photoresist layer 339a has the shape identical with photomask 340.
Then, with reference to Fig. 5 F, the mask layer 333a dry ecthing that will do not covered by photoresist layer 339a, thus form rectangular mask layer 333b.
Then, with reference to Fig. 5 G, remove photoresist layer 339a.With reference to Fig. 5 H; Utilize rectangular mask layer 333b as mask; With substrate 331 dry ecthings or wet etching; Thereby first semiconductor electrode areas 332 and second semiconductor electrode areas 334 are arranged on the prism of resistive tip 330, the top alignment of resistive region 336 and resistive tip 330.
Then, remove mask layer 333b, substrate 331 is heated in oxygen atmosphere, thereby on the top surface of substrate 331, form the silicon oxide layer (not shown) of predetermined thickness.Oxide layer is removed so that the end of resistive region 336 comes to a point.Because thermal oxidation technology, resistive region 336 can contact with each other, and resistive tip 330 can come to a point simultaneously.
With reference to Fig. 5 I, dielectric layer 360 is positioned on the substrate 331, thereby covers resistive tip 330.Dielectric layer 360 can be by a kind of the processing of selecting the group of forming from following material: SiO
2, Si
3N
4, ONO, Al
2O
3, DLC, TiO
2, HfO
2, ZrO
2And NiO.Through chemically mechanical polishing (CMP) with 360 complanations of the dielectric layer on the end of resistive tip 330.From comprising Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IO
2, Ag, W and WC group in a kind of material of selecting be deposited on the dielectric layer 360, thereby form metallic shield 362.Metallic shield 362 is deposited as the thickness of about 10nm to 200nm.Through forming pattern with the removing of metallic shield 362 with resistive region 336 corresponding parts, thus the opening 363 that formation has predetermined diameter (for example, tens nanometers).
Then, with reference to Fig. 5 J, the basal surface of etch substrate 331 is so that resistive tip 330 can be arranged on an end of cantilever 370.First semiconductor electrode areas 332 and second semiconductor electrode areas 334 are connected to the electrode pads 384 through 382 insulation of the insulation course on the substrate 331, thereby have accomplished semiconductor probe.The electrode pads 394 that is used for ground voltage is formed on metallic shield 362.
In the method for manufacturing, before making resistive tip 330, carry out the ion implantation technology that is used to form first semiconductor electrode areas 332 and second semiconductor electrode areas 334 according to the semiconductor probe of present embodiment.Therefore, can carry out meticulous lithoprinting etch process, and can come easily to form resistive region 336 through thermal diffusion.In addition, after making resistive tip 330, dielectric layer 360 and metallic shield 362 be deposited on the substrate 331 and through forming pattern form opening 363, thereby can easily realize metallic shield 362.
Fig. 6 is the sectional view with the probe that uses in the emulation according to the resolution of the resistive probe with metallic shield of the embodiment shown in Fig. 4 and the resolution comparison of the probe that does not have metallic shield.Fig. 7 is the curve map that illustrates when using the probe of Fig. 6 according to the variation of the leakage current of surface charge.
With reference to Fig. 6; Source electrode 432 is formed on the both sides of resistive tip 430 with drain electrode 434; Metallic shield 460 is formed on the dielectric layer 460 that covers resistive tip 430, and this metallic shield 460 has opening 463 to expose the resistive region 436 of resistive tip 430.The diameter of the opening 436 of metallic shield 460 is 100nm, and metal and metallic shield 460 with suspension voltage (floating voltage) are apart from 15nm.Suspension voltage changes from+1V to-1V, through at mark move the leakage current that suspension voltage calculates probe 430 on the direction of arrow A.After measurement; The transition width (transition width) of resistive tip between two opposite charges (positive and negative) that does not have a metallic shield is 112nm, yet the resistive tip with metallic shield has the transition width of very sharp-pointed 23nm between relative electric charge (positive and negative).Can find out from measurement result, owing to metallic shield makes the resolution of resistive tip improve.
According to the semiconductor probe with resistive tip of the present invention, resistive tip is protected by dielectric layer, it is surperficial wide that resistive tip contacts with the surface of storage medium, thereby has reduced the pressure that semiconductor probe is applied to storage medium.In addition, owing to metallic shield makes the resolution of semiconductor probe improve.
According to making the method with semiconductor probe of resistive tip of the present invention, the metallic shield that is positioned on the plane is easy to make.
In addition, when semiconductor probe according to the present invention was applied to the extra small information-storing device of high capacity that has adopted the scanning probe microscopy technology, the electric charge that can detect existence in the zonule can form electric charge with recorded information with information reproduction in the zonule.
Though invention has been described to have shown the present invention and reference exemplary embodiment of the present invention particularly; But will be understood by those skilled in the art that; Under the situation that does not break away from the spirit and scope of the present invention that are defined by the claims, can make various changes to form among the present invention and details.
Claims (20)
1. semiconductor probe comprises:
Resistive tip is doped with first impurity, and said resistive tip comprises:
Resistive region is formed on the top of said resistive tip, and light dope has second impurity, and the polarity of said second impurity and said first impurity is opposite;
First semiconductor electrode areas and second semiconductor electrode areas are respectively formed on the prism of both sides of said resistive tip, and heavy doping has said second impurity;
Cantilever, said resistive tip are positioned on the end of said cantilever;
Dielectric layer covers said resistive region on said cantilever, and parallel with said cantilever;
Metallic shield is positioned on the said dielectric layer, and has the opening that is formed on the position corresponding with said resistive region.
2. semiconductor probe as claimed in claim 1, wherein, said dielectric layer is by a kind of the processing of selecting the group of forming from following material: SiO
2, Si
3N
4, ONO, Al
2O
3, DLC, TiO
2, HfO
2, ZrO
2And NiO.
3. semiconductor probe as claimed in claim 1, wherein, said metallic shield is by a kind of the processing of selecting the group of forming from following material: Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IO
2, Ag, W and WC.
4. semiconductor probe as claimed in claim 3 wherein, is deposited as said metallic shield the thickness of 10nm to 200nm.
5. semiconductor probe as claimed in claim 1, wherein, said first impurity is p type impurity, said second impurity is n type impurity.
6. semiconductor probe as claimed in claim 1, wherein, said first impurity is n type impurity, said second impurity is p type impurity.
7. semiconductor probe comprises:
Resistive tip is doped with first impurity, and said resistive tip comprises:
Resistive region is formed on the top of said resistive tip, and light dope has second impurity, and the polarity of said second impurity and said first impurity is opposite;
First semiconductor electrode areas and second semiconductor electrode areas are respectively formed on the prism of both sides of said resistive tip, and heavy doping has said second impurity;
Cantilever, said resistive tip are positioned on the end of said cantilever;
Dielectric layer is positioned on the said cantilever, covers said resistive region, and parallel with said cantilever;
Metallic shield is positioned on the said dielectric layer and has the opening that is positioned at the position corresponding with said resistive region,
Wherein, said dielectric layer is by a kind of the processing of selecting the group of forming from following material: SiO
2, Si
3N
4, ONO, Al
2O
3, DLC, TiO
2, HfO
2, ZrO
2And NiO, said metallic shield is deposited as the thickness of 10nm to 200nm, and said metallic shield is by a kind of the processing of selecting the group of forming from following material: Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IO
2, Ag, W and WC.
8. method of making semiconductor probe, said method comprises:
(1) on the top surface of substrate, forms the resistive tip that is doped with first impurity; Said resistive tip comprises: resistive region; Be formed on the top of said resistive tip, light dope has second impurity, and the polarity of said second impurity and said first impurity is opposite; First semiconductor electrode areas and second semiconductor electrode areas are respectively formed on the prism of both sides of said resistive tip, and heavy doping has said second impurity;
(2) on said substrate, form dielectric layer, the generation type of said dielectric layer is for arriving the end of said resistive tip, and said dielectric layer is parallel with said substrate;
(3) on said dielectric layer, form metallic shield, said metallic shield has opening, and said opening is corresponding to the said resistive region of said resistive tip;
(4) basal surface through the said substrate of etching forms cantilever, and the generation type of said cantilever is the end that said resistive tip is positioned at said cantilever.
9. method as claimed in claim 8, wherein, step (2) comprising:
Above said resistive tip, said dielectric layer is formed preset thickness;
Through chemically mechanical polishing with said dielectric layer complanation, thereby make the end of said resistive tip and said dielectric layer have essentially identical height.
10. method as claimed in claim 8, wherein, said dielectric layer is by a kind of the processing of selecting the group of forming from following material: SiO
2, Si
3N
4, ONO, Al
2O
3, DLC, TiO
2, HfO
2, ZrO
2And NiO.
11. method as claimed in claim 8, wherein, said metallic shield is by a kind of the processing of selecting the group of forming from following material: Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IO
2, Ag, W and WC.
12. method as claimed in claim 11 wherein, is deposited as said metallic shield the thickness of 10nm to 200nm.
13. method as claimed in claim 8, wherein, said step (1) comprising:
On the top surface of said substrate, form the mask layer of the band shape that is doped with said first impurity; Form said first semiconductor electrode areas and said second semiconductor electrode areas through said second impurity that the part that is not covered by said mask layer of said substrate is mixed, the polarity of said second impurity and said first impurity is opposite;
Through said substrate annealing being reduced the gap between said first semiconductor electrode areas and said second semiconductor electrode areas, the resistive region of said second impurity is arranged along the outside surface formation light dope of said first semiconductor electrode areas and said second semiconductor electrode areas;
The top surface that covers through the mask layer that is not patterned that said mask layer is patterned as predetermined shape and the said substrate of etching forms said resistive tip.
14. method as claimed in claim 13; Wherein, the formation step of said resistive region comprises: diffuse to that reaching contacts with each other and taper off to a point the formation part through making said resistive region from said first semiconductor electrode areas and second semiconductor electrode areas.
15. method as claimed in claim 13, wherein, the formation step of said resistive tip also comprises: form the banded photoresist layer vertical with said mask layer and said mask layer is etched to rectangular shape.
16. method as claimed in claim 13, wherein, the formation step of said resistive tip also comprises:
Remove the mask layer of said patterning;
Through under oxygen atmosphere, said substrate annealing being come on the surface of said substrate, to form the oxide layer of predetermined thickness;
Through removing said oxide layer the said end of said resistive region is come to a point.
17. method as claimed in claim 16, wherein, the formation step of said oxide layer comprises: diffuse to that reaching contacts with each other and taper off to a point the formation part through making said resistive region from said first semiconductor electrode areas and second semiconductor electrode areas.
18. method as claimed in claim 8, wherein, said first impurity is p type impurity, and said second impurity is n type impurity.
19. method as claimed in claim 8, wherein, said first impurity is n type impurity, and said second impurity is p type impurity.
20. a method of making semiconductor probe, said method comprises:
On the top surface of substrate, form the resistive tip that is doped with first impurity; The generation type of said resistive tip is for comprising the resistive region and first semiconductor electrode areas and second semiconductor electrode areas; Top and light dope that said resistive region is formed on said resistive tip have second impurity; The polarity of the polarity of said second impurity and said first impurity is opposite, and said first semiconductor electrode areas and said second semiconductor electrode areas are respectively formed to lay equal stress on the prism of both sides of said resistive tip and are doped with second impurity;
On said substrate, form dielectric layer, the generation type of said dielectric layer is the end that reaches said resistive tip, and said dielectric layer is parallel with said substrate;
On said dielectric layer, form metallic shield, the generation type of said metallic shield is in said metallic shield, to form opening, and said opening is positioned at the position corresponding with the said resistive region of said resistive tip;
Basal surface through the said substrate of etching forms cantilever, and the generation type of said cantilever is an end of the resistive tip end that is positioned at said cantilever,
Wherein, said dielectric layer is by a kind of the processing of selecting the group of forming from following material: SiO
2, Si
3N
4, ONO, Al
2O
3, DLC, TiO
2, HfO
2, ZrO
2And NiO, said metallic shield is deposited as the thickness of 10nm to 200nm, and said metallic shield is by a kind of the processing of selecting the group of forming from following material: Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IO
2, Ag, W and WC.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050003977A KR100682916B1 (en) | 2005-01-15 | 2005-01-15 | Semiconductor probe with resistive tip and method of fabricating the same |
| KR1020050003977 | 2005-01-15 | ||
| KR10-2005-0003977 | 2005-01-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1811944A CN1811944A (en) | 2006-08-02 |
| CN1811944B true CN1811944B (en) | 2012-04-04 |
Family
ID=36127302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005101345166A Expired - Fee Related CN1811944B (en) | 2005-01-15 | 2005-12-08 | Semiconductor probe with resistive tip and method of fabricating the same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7411210B2 (en) |
| EP (1) | EP1681548B1 (en) |
| JP (1) | JP4369430B2 (en) |
| KR (1) | KR100682916B1 (en) |
| CN (1) | CN1811944B (en) |
| DE (1) | DE602006000055T2 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100785006B1 (en) * | 2005-09-03 | 2007-12-12 | 삼성전자주식회사 | Semiconductor probe with resistive tip of high resolution and method of fabricating the same |
| KR100773556B1 (en) * | 2006-08-02 | 2007-11-07 | 삼성전자주식회사 | Electric field read/write head and method for manufacturing the same and information read/write device |
| KR100829565B1 (en) * | 2006-10-02 | 2008-05-14 | 삼성전자주식회사 | Semiconductor probe having resistive tip of wedge shape and method of fabricating the same |
| KR100790893B1 (en) * | 2006-10-20 | 2008-01-03 | 삼성전자주식회사 | Semiconductor probe having embossed resistive tip and method of fabricating the same |
| KR100790895B1 (en) | 2006-11-16 | 2008-01-03 | 삼성전자주식회사 | Semiconductor probe having resistive tip and method of fabricating the same |
| KR100785036B1 (en) * | 2006-12-12 | 2007-12-11 | 삼성전자주식회사 | Method of fabricating electrical field sensor having electrical field shield |
| KR20090055876A (en) * | 2007-11-29 | 2009-06-03 | 삼성전자주식회사 | Electric field effect read/write head, storage apparatus adopting the same, and manufacturing method of electric field effect read/write head |
| KR101260903B1 (en) * | 2007-12-24 | 2013-05-06 | 시게이트 테크놀로지 엘엘씨 | Electric field effect read/write head, storage apparatus adopting the same, and manufactuering method of electric field effect read/write head |
| JP5667350B2 (en) * | 2009-08-07 | 2015-02-12 | 株式会社神戸製鋼所 | Contact probe pin |
| EP2869071A1 (en) * | 2013-10-29 | 2015-05-06 | Imec | Probe configuration and method of fabrication thereof |
| SG11202003738VA (en) * | 2017-11-10 | 2020-05-28 | Ferrotec Material Tech Corporation | Ceramic, probe guiding member, probe card, and socket for package inspection |
| EP3599471A1 (en) | 2018-07-26 | 2020-01-29 | IMEC vzw | A device for measuring surface characteristics of a material |
| CN111089988B (en) * | 2019-12-27 | 2023-01-31 | 季华实验室 | High-uniformity magnetic probe and preparation method thereof |
| CN116749666B (en) * | 2023-08-23 | 2023-11-07 | 松诺盟科技有限公司 | Strain sensitive resistor pattern manufacturing method, device and storage medium |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5923033A (en) * | 1994-09-14 | 1999-07-13 | Olympus Optical Co., Ltd. | Integrated SPM sensor having a photodetector mounted on a probe on a free end of a supported cantilever |
| US6479892B1 (en) * | 2000-10-31 | 2002-11-12 | Motorola, Inc. | Enhanced probe for gathering data from semiconductor devices |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6913982B2 (en) * | 2001-05-08 | 2005-07-05 | Geunbae Lim | Method of fabricating a probe of a scanning probe microscope (SPM) having a field-effect transistor channel |
| KR100466158B1 (en) | 2001-11-21 | 2005-01-14 | 재단법인서울대학교산학협력재단 | Single/Multiple Cantilever Probe Having High Resolution for Atomic Force Microscopy and Method for Producing the Same |
| KR100436292B1 (en) * | 2001-11-28 | 2004-06-16 | 한국전자통신연구원 | Head for recording and reading optical data and a method of manufacturing the same |
| KR100468850B1 (en) * | 2002-05-08 | 2005-01-29 | 삼성전자주식회사 | Semiconductor probe with resistive tip and Method of fabricating thereof and Information recording apparatus, Information reproducing apparatus, and Information measuring apparatus comprising the same |
| KR100537508B1 (en) | 2003-04-10 | 2005-12-19 | 삼성전자주식회사 | Method of fabricating semiconductor probe with resistive tip |
-
2005
- 2005-01-15 KR KR1020050003977A patent/KR100682916B1/en not_active IP Right Cessation
- 2005-12-08 CN CN2005101345166A patent/CN1811944B/en not_active Expired - Fee Related
-
2006
- 2006-01-03 US US11/322,340 patent/US7411210B2/en not_active Expired - Fee Related
- 2006-01-10 JP JP2006003005A patent/JP4369430B2/en not_active Expired - Fee Related
- 2006-01-12 DE DE602006000055T patent/DE602006000055T2/en active Active
- 2006-01-12 EP EP06250144A patent/EP1681548B1/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5923033A (en) * | 1994-09-14 | 1999-07-13 | Olympus Optical Co., Ltd. | Integrated SPM sensor having a photodetector mounted on a probe on a free end of a supported cantilever |
| US6479892B1 (en) * | 2000-10-31 | 2002-11-12 | Motorola, Inc. | Enhanced probe for gathering data from semiconductor devices |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平11-30630A 1999.02.02 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100682916B1 (en) | 2007-02-15 |
| JP2006194879A (en) | 2006-07-27 |
| DE602006000055D1 (en) | 2007-09-20 |
| DE602006000055T2 (en) | 2008-04-30 |
| KR20060083066A (en) | 2006-07-20 |
| US20060157440A1 (en) | 2006-07-20 |
| US7411210B2 (en) | 2008-08-12 |
| EP1681548B1 (en) | 2007-08-08 |
| CN1811944A (en) | 2006-08-02 |
| EP1681548A1 (en) | 2006-07-19 |
| JP4369430B2 (en) | 2009-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1811944B (en) | Semiconductor probe with resistive tip and method of fabricating the same | |
| CN1747071B (en) | Method of fabricating semiconductor probe with resistive tip | |
| JP4050291B2 (en) | Manufacturing method of semiconductor probe provided with resistive tip | |
| KR100829565B1 (en) | Semiconductor probe having resistive tip of wedge shape and method of fabricating the same | |
| US7759954B2 (en) | Semiconductor probe having resistive tip and method of fabricating the same | |
| US7671616B2 (en) | Semiconductor probe having embossed resistive tip and method of fabricating the same | |
| US7605014B2 (en) | Method of fabricating resistive probe having self-aligned metal shield | |
| US7528371B2 (en) | Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120404 Termination date: 20161208 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |