CN1808707A - Manufacturing method of resonant-tunneling diode and high-electron mobility transistor components - Google Patents
Manufacturing method of resonant-tunneling diode and high-electron mobility transistor components Download PDFInfo
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- CN1808707A CN1808707A CN 200510004572 CN200510004572A CN1808707A CN 1808707 A CN1808707 A CN 1808707A CN 200510004572 CN200510004572 CN 200510004572 CN 200510004572 A CN200510004572 A CN 200510004572A CN 1808707 A CN1808707 A CN 1808707A
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- mobility transistor
- electron mobility
- tunneling diode
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Abstract
This invention relates to resonance breaker diode and high electron mobility transistor process method, which comprises the following steps: growing the high electron mobility transistor and diode structure by use of molecule beam extending outside on semi-isolator Gas; forming the diode bench by use of etching and wet erosion technique; forming isolation groove by use of etching technique and erosion method; processing the metal ohm touch of resonance breaker diode, transistor source electrode and leakage electrode on the bench and then annealing; processing emission electrode and annealing on the diode surface; erosion grating tank and stopping erosion when the leakage and source electrodes saturate; using molecule beam to vapor isolation groove to process grating electrode; processing one air bridge and second gas bridge; connecting the resonance diode and mobility transistor.
Description
Technical field
The present invention relates to the integrated technique of technology and the resonant-tunneling diode (RTD) and the High Electron Mobility Transistor (HEMT) of the making of resonant-tunneling diode (RTD) and High Electron Mobility Transistor (HEMT) discrete device.
Background technology
Along with the design size of integrated circuit is dwindled to submicron order from micron order, quantum effect will influence the performance of device.The development of very lagre scale integrated circuit (VLSIC) is restricted, and quantum device will be the replacer of traditional devices.Advantages such as resonant-tunneling diode (RTD) is the basis of most of quantum devices, has the negative resistance differential effect, and change-over time is extremely short, it is applied in the circuit, to improve the speed of circuit greatly, reduce the number of integrated circuit required device, huge utilization prospect will be arranged in digital circuit.
Along with the modulation doping technology that molecular beam epitaxy technique (MBE) and Metalorganic Chemical Vapor Deposition (MOVCD) grow up, make people's ratio be easier to make High Electron Mobility Transistor (HEMT).High Electron Mobility Transistor (HEMT) is owing to existing two dimensional electron gas, so it has very high cut-off frequency.
For negative resistance derivative characteristic and the outstanding high frequency characteristics of High Electron Mobility Transistor (HEMT) of utilizing resonant-tunneling diode (RTD), we can integrate RTD and HEMT, realize trigger, mould one number converter or the like functional circuit.
Document IEEE Electron Device Lett., Vol 16, No.3, pp.127-129,1996 have carried out the integrated of RTD and HEMT device, simply introduced integrated technique: be the cathode layer that corrosive liquid etches into the n-InGaAs below the double potential barrier quantum well at first with sulfuric acid, thereby determining the RTD table top, is that the corrosive liquid selective etch is to the InAlAs barrier layer, and then by slight non-selective etching with citric acid then, eliminate etching barrier layer, expose HEMT cap layer.After the recessed grid etching, deposition Pt/Ti/Pt/Au gate electrode.
Document IEEE Electron Device Lett., vol.19, NO.12,1998:478-480 have studied the plane integrated technology of resonance resonance tunnel-through diode (RTD) with counterfeit High Electron Mobility Transistor (PHEMT).This technology replaces traditional deep mesa corrosion technology with implant isolation technique and self-registered technology, thereby the plane of realizing RTD and PHEMT is integrated.
Summary of the invention
The objective of the invention is to, a kind of resonant-tunneling diode and High Electron Mobility Transistor devices manufacture method are provided, on the basis that absorbs forefathers' design advantage, proposed practicablely in conjunction with the existing processes condition, relatively simple discrete device is made and the integrated manufacture method of device.
The integrated technology of element manufacturing of the present invention and device is:
A kind of resonant-tunneling diode of the present invention and High Electron Mobility Transistor devices manufacture method is characterized in that, comprise the steps:
Step 1: on the Semi-insulating GaAs substrate successively with molecular beam epitaxial device growth High Electron Mobility Transistor and resonant-tunneling diode structure;
Step 2: the table top that forms resonant-tunneling diode on the surface of epitaxial wafer with photoetching technique and wet etching;
Step 3: the isolation with between photoetching technique and wet etching realization High Electron Mobility Transistor and the resonant-tunneling diode device forms isolating trenches;
Step 4: on the High Electron Mobility Transistor table top, carry out the metal ohmic contact of source electrode, drain electrode and the resonant-tunneling diode bottom electrode of High Electron Mobility Transistor and make, anneal then;
Step 5: the upper surface at resonant-tunneling diode carries out metal ohmic contact making emitter, annealing then;
Step 6: erode away the grid groove, when saturation current appears in source-drain electrode, stop corrosion;
Step 7: in isolating trenches, make grid with the molecular beam evaporation;
Step 8: make the empty and second gas bridge of first air bridges, resonant-tunneling diode and High Electron Mobility Transistor are connected with each other.
Wherein form the resonant-tunneling diode table top and realize that the used corrosive liquid of isolation between the device is the corrosive liquid of ammoniacal liquor base with wet etching.
The wherein source electrode of High Electron Mobility Transistor, drain electrode, the resonant-tunneling diode used metal of utmost point metal ohmic contact up and down are the gold germanium nickel alloy.
Wherein during the grid groove corrosion, used corrosive liquid is the GaAs selective corrosion liquid of aluminium arsenide/GaAs.
The metal that wherein said grid is made usefulness is the titanium platinum alloy.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is RTD of the present invention and the in parallel integrated sectional view of HEMT.
Embodiment
See also shown in Figure 1ly, a kind of resonant-tunneling diode of the present invention and High Electron Mobility Transistor devices manufacture method comprise the steps:
Step 1: on semi-insulating GaAs (GaAs) substrate 1 successively with molecular beam epitaxial device growth High Electron Mobility Transistor 2 and resonant-tunneling diode 3 structures;
Step 2: the table top 31 that forms resonant-tunneling diode 3 on the surface of epitaxial wafer with photoetching technique and wet etching; Wherein form resonant-tunneling diode 3 table tops 31 and realize that the used corrosive liquid of isolation between the device is the corrosive liquid of ammoniacal liquor base with wet etching;
Step 3: the isolation with between photoetching technique and wet etching realization High Electron Mobility Transistor 2 and resonant-tunneling diode 3 devices forms isolating trenches a;
Step 4: on High Electron Mobility Transistor 2 table tops 21, carry out the metal ohmic contact of source electrode 8, drain electrode 6 and resonant-tunneling diode 3 upper/lower electrodes 4,5 of High Electron Mobility Transistor 2 and make, anneal then; The wherein source electrode 8 of High Electron Mobility Transistor 2, drain electrode 6, the resonant-tunneling diode 3 used metal of the utmost point 4,5 metal ohmic contact up and down is the gold germanium nickel alloy
Step 5: the upper surface at resonant-tunneling diode 3 carries out metal ohmic contact making emitter 4, annealing then;
Step 6: erode away grid groove b, when saturation current appears in source-drain electrode, stop corrosion; When wherein grid groove b corroded, used corrosive liquid was the GaAs selective corrosion liquid of aluminium arsenide/GaAs;
Step 7: make grid 7 with the molecular beam evaporation in isolating trenches a, the metal that wherein said grid 7 is made usefulness is the titanium platinum alloy;
Step 8: make the empty 10 and second gas bridge 11 of first air bridges, resonant-tunneling diode 3 and High Electron Mobility Transistor 2 are connected with each other.
Embodiment
(1) on the Semi-insulating GaAs substrate successively with molecular beam epitaxial device growth High Electron Mobility Transistor and resonant-tunneling diode structure.
(2) corrosion RTD table top
Corrosive liquid is selected NH for use
4OH: H
2O
2: H
2O=3: 1: 96 (volume ratio), must detect the cut-in voltage of epitaxial film materials in real time, etching time is about 60 seconds.
(3) isolation of part table
Corrosive liquid is selected NH for use
4OH: H
2O
2: H
2O=3: 1: 96 (volume ratio), etching time be greater than 130 seconds, when cut-in voltage greater than 60V, corrosion finishes.
(4) leak and the making of RTD bottom electrode ohmic contact in the PHEMT source
Sputter 50 Ni/1000 AuGe/2000 Au deposit 1500 SiO then
2Layer, annealing temperature is 390 ℃, annealing time is 40 seconds.
(5) RTD top electrode ohmic contact is made
Sputter 50 Ni/1000 AuGe/2000 Au, annealing temperature is 380 ℃, annealing time is 15 seconds.
(6) PHEMT grid groove corrosion
The grid groove corrosion is selected citric acid for use: H
2O
2=7: 1 (vol) corrosive liquid when the source occurring and spill now saturated trend, reduces to corrode blanking time, when saturation current reaches particular value, stops corrosion.
(7) the PHEMT gate electrode is made
Because the sputter meeting causes the damage of material, will influence the modulation of grid to the raceway groove two-dimensional electron gas, so select evaporated metal Ti/Pt/Au, thickness is about 2500 .
(8) make air bridges
A, with PECVD deposition one deck SiO
2Film, about 2000 ;
B, coating photoresist, exposure, development are fallen part Si O with the HF solution corrosion then
2Film requires the area of the area of corrosion less than metal;
C, for the second time apply photoresist, exposure, development and open metal bridge pier window, sputter 500 Cr/1000 Au on entire chip;
D, apply photoresist for the third time, exposure, develop and open bridge pier and bridge floor window, electroplate;
E, the 4th time apply photoresist, exposure, development, corroding metal film, and remove photoresist bridge floor under, formation air bridges with organic solvent.
Claims (5)
1, a kind of resonant-tunneling diode and High Electron Mobility Transistor devices manufacture method is characterized in that, comprise the steps:
Step 1: on semi-insulating substrate successively with molecular beam epitaxial device growth High Electron Mobility Transistor and resonant-tunneling diode structure;
Step 2: the table top that forms resonant-tunneling diode on the surface of epitaxial wafer with photoetching technique and wet etching;
Step 3: the isolation with between photoetching technique and wet etching realization High Electron Mobility Transistor and the resonant-tunneling diode device forms isolating trenches;
Step 4: on the High Electron Mobility Transistor table top, carry out the metal ohmic contact of source electrode, drain electrode and the resonant-tunneling diode bottom electrode of High Electron Mobility Transistor and make, anneal then;
Step 5: the upper surface at resonant-tunneling diode carries out metal ohmic contact making emitter, annealing then;
Step 6: erode away the grid groove, when saturation current appears in source-drain electrode, stop corrosion;
Step 7: in isolating trenches, make grid with the molecular beam evaporation;
Step 8: make the empty and second gas bridge of first air bridges, resonant-tunneling diode and High Electron Mobility Transistor are connected with each other.
2, resonant-tunneling diode according to claim 1 and High Electron Mobility Transistor devices manufacture method, it is characterized in that, wherein form the resonant-tunneling diode table top and realize that the used corrosive liquid of isolation between the device is the corrosive liquid of ammoniacal liquor base with wet etching.
3, resonant-tunneling diode according to claim 1 and High Electron Mobility Transistor devices manufacture method, it is characterized in that, the wherein source electrode of High Electron Mobility Transistor, drain electrode, the resonant-tunneling diode used metal of utmost point metal ohmic contact up and down are the gold germanium nickel alloy.
4, resonant-tunneling diode according to claim 1 and High Electron Mobility Transistor devices manufacture method is characterized in that, wherein during the grid groove corrosion, used corrosive liquid is the GaAs selective corrosion liquid of aluminium arsenide/GaAs.
5, resonant-tunneling diode according to claim 1 and High Electron Mobility Transistor devices manufacture method is characterized in that, the metal that wherein said grid is made usefulness is the titanium platinum alloy.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200510004572 CN1808707A (en) | 2005-01-18 | 2005-01-18 | Manufacturing method of resonant-tunneling diode and high-electron mobility transistor components |
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| CN 200510004572 CN1808707A (en) | 2005-01-18 | 2005-01-18 | Manufacturing method of resonant-tunneling diode and high-electron mobility transistor components |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447485B (en) * | 2007-11-28 | 2010-11-03 | 中国科学院微电子研究所 | Structure of single chip integrated GaAs-based PHEMT and PIN diode material |
| TWI474483B (en) * | 2011-09-26 | 2015-02-21 | Transphorm Japan Inc | Compound semiconductor device and method of manufacturing the same |
| CN104659145A (en) * | 2015-03-06 | 2015-05-27 | 中国科学院半导体研究所 | Resonant tunneling diode based high-sensitivity detector with low dark current |
| CN109216331A (en) * | 2018-07-23 | 2019-01-15 | 西安电子科技大学 | A kind of the millimeter wave predistortion integrated circuit and production method of PIN-based diode |
-
2005
- 2005-01-18 CN CN 200510004572 patent/CN1808707A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447485B (en) * | 2007-11-28 | 2010-11-03 | 中国科学院微电子研究所 | Structure of single chip integrated GaAs-based PHEMT and PIN diode material |
| TWI474483B (en) * | 2011-09-26 | 2015-02-21 | Transphorm Japan Inc | Compound semiconductor device and method of manufacturing the same |
| CN104659145A (en) * | 2015-03-06 | 2015-05-27 | 中国科学院半导体研究所 | Resonant tunneling diode based high-sensitivity detector with low dark current |
| CN104659145B (en) * | 2015-03-06 | 2017-01-25 | 中国科学院半导体研究所 | Resonant tunneling diode based high-sensitivity detector with low dark current |
| CN109216331A (en) * | 2018-07-23 | 2019-01-15 | 西安电子科技大学 | A kind of the millimeter wave predistortion integrated circuit and production method of PIN-based diode |
| CN109216331B (en) * | 2018-07-23 | 2020-07-17 | 西安电子科技大学 | Millimeter wave predistortion integrated circuit based on PIN diode and manufacturing method |
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