CN1808697A - Semiconductor substrate treating method, semiconductor component and electronic appliance - Google Patents
Semiconductor substrate treating method, semiconductor component and electronic appliance Download PDFInfo
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- CN1808697A CN1808697A CN 200510133836 CN200510133836A CN1808697A CN 1808697 A CN1808697 A CN 1808697A CN 200510133836 CN200510133836 CN 200510133836 CN 200510133836 A CN200510133836 A CN 200510133836A CN 1808697 A CN1808697 A CN 1808697A
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Abstract
The invention discloses a semiconductor plaque treating method, which adopts treatment solution containing NH4OH and HF to treat the semiconductor solution. When the concentration of the NH4OH in the treatment solution is X (mol/L) and the concentration of the HF in the treatment solution is arranged to be Y (mol/L), the relations that X/Y is less or equal to 0.78 and more or equal to 0.30 and Y is less or equal to 6.0 and more or equal to 0.03 are satisfied. Substantially, H2O2 is not contained in the treatment solution preferably. In addition, the semiconductor provided for the treating method of the invention is preferably constructed at least partially by refractory metal near the surface. Thereby, the invention provides a semiconductor plaque treating method which can remove selectively the pollutant (useless matter) near the surface of the semiconductor plaque, provides a highly- reliable semiconductor component made by adopting such method and provides a highly- reliable electronic machine which is provided with the semiconductor component.
Description
Technical field
The present invention relates to a kind of processing method, semiconductor device and e-machine of semiconductor substrate.
Background technology
In recent years, highly integrated along with equipment, strong request further purifies the surface of semiconductor substrate (semiconductor wafer).
If there are particle contamination materials (also being called particle) such as silicon grain or dust on the surface of semiconductor substrate; then become the wiring broken string of equipment or the reason of short circuit; and; if having metal such as transition metal is polluter, oxidation then occurs and induce stacked generation of defects or life-span to reduce such problem.Therefore, though carried out being used for matting that these polluters are removed, also must avoid contaminated when cleaning.
Cleaning method as in the past semiconductor substrate, carry out method as described below: the method that (1) is cleaned with the diluted hydrofluoric acid aqueous solution, (2) method of cleaning, and (3) method of cleaning with the mixed aqueous solution of ammonia and hydrogen peroxide with the mixed aqueous solution of hydrochloric acid or sulfuric acid and hydrogen peroxide.About the employed cleaning fluid of these various ablutions, using power reduction particle contamination material to the utmost or metal is the highly purified drug class or the water of polluter.
In cleaning method in the past, method (1) is though good aspect the removal ability (solvability) of polluters such as oxide, and existence is difficult to reduce the problem of particle contamination material.In addition, under the situation of the semiconductor substrate that method (1) is used to have oxide-film, the problem points that exists is, the selectivity of the oxide that should remove and oxide-film that should be remaining is lower, in the oxide dissolution that should remove (etching) in addition oxide-film that should be remaining also dissolve (etching) together.
Method (2) does not have the ability of dissolved oxygen thing though to have utilized for metal be the high-solvency of polluter.
Method (3) is because of having the effect of dissolves silicon itself, so it is higher to remove in the above the effect of the particle contamination material that exists or resist residue or etch reaction products, easily take in the character that metal is a polluter etc. but have in cleaning fluid, therefore probably with the semiconductor substrate recontamination.In addition, under the situation of employing method (3), known meeting is W refractory metals such as (tungsten) dissolving, roughness increased after perhaps destroying the Si substrate surface, causes making the performance degradation of semiconductor element.
In addition, method as the problem of eliminating above-mentioned previous methods, a kind of method that is referred to as light etching (slight etch) (for example, with reference to non-patent literature 1) that semiconductor substrate (silicon wafer) back is cleaned of flooding in the nitric acid of 60wt% and the hydrofluoric mixed aqueous solution below the 0.1wt% has been proposed.But, even be referred to as the nitric acid of semiconductor with the highest purity of grade, because containing the metal of ppb level or inferior ppb level is polluter (for example Al, Ca, Cu, Fe, K, Na, Za etc.), therefore the concentration that contains metal in the cleaning fluid of the high concentration nitric acid that reaches 60wt% and be polluter is higher, in addition, when the rinse bath that uses quartz glass to make, behind the metal impurities wash-out in the quartz glass, its concentration can uprise more.And, because of the strong oxidability of high concentration nitric acid after the surface of semiconductor substrate forms oxide-film, the metal in the cleaning fluid is that polluter is ingested in the oxide-film easily.Therefore, even have to adopt light engraving method, also be limited aspect the height purification of silicon wafer.
In addition, the aqueous solution of hydrogen peroxide of a kind of hydrogen fluoride that will contain the above hydrochloric acid of 0.10wt%, 0.05～10wt% and 0.05～10wt% has been proposed as the method (for example, with reference to patent documentation 1) of cleaning fluid.Yet under the situation of using such cleaning fluid, the problem of existence is, and is same with the diluted hydrofluoric acid aqueous solution, exists even answers the remaining also dissolved problem of oxide-film.And such aqueous solution owing to W refractory metals such as (tungsten) can be melted, therefore for containing the semiconductor substrate (for example, have the semiconductor substrate of the gate electrode that the material that contain W be made of etc.) of such metal material as inscape, can't be used.
Non-patent literature 1:Rituo Takizawa etc., " Extended Abstracts of Solid StateDevices and Materials ", 1988, P.475
Patent documentation 1: special fair 8-18920 communique (scope of patent request)
Summary of the invention
The objective of the invention is to, provide a kind of processing method that can optionally remove the semiconductor substrate of the polluter (particle contamination material or resist residue or etch reaction products) that exists at the near surface of semiconductor substrate (especially can effectively prevent oxide-film (especially heat oxide film), or by Si, Poly-Si, should being removed in remaining zone of formations such as refractory metal, remove the processing method of the semiconductor substrate of polluter (useless material) simultaneously), a kind of high semiconductor device of reliability that adopts such method to make is provided, in addition, also provide a kind of high e-machine of reliability that possesses above-mentioned semiconductor component.
Such purpose is realized by following the present invention.
The processing method of semiconductor substrate of the present invention is characterized in that, is that a kind of use contains NH
4The method that the treatment fluid of OH and HF is handled semiconductor substrate,
NH in establishing above-mentioned treatment fluid
4OH concentration is X[mol/L], the concentration of establishing the HF in the above-mentioned treatment fluid is Y[mol/L] time, satisfy 0.30≤X/Y≤0.78 the relation and relation of 0.03≤Y≤6.0.
Like this, can provide a kind of processing method that can optionally remove the semiconductor substrate of the polluter (useless material) that exists at the near surface of semiconductor substrate.Particularly providing a kind of can effectively prevent oxide-film (especially heat oxide film) or by should being removed in remaining zone that Si, Poly-Si, refractory metal etc. constitute, can remove the processing method of the semiconductor substrate of polluter (useless material) simultaneously.
In the processing method of semiconductor substrate of the present invention, preferably use above-mentioned treatment fluid, the oxide-film that will exist at the near surface of above-mentioned semiconductor substrate, become embrane method to form by gas phase is removed.
For example, have under the situation that becomes oxide-film that embrane method forms and heat oxide film by gas phase at the semiconductor substrate that should handle, in the past, become the etching selectivity of the oxide-film that embrane method forms lower by gas phase, optionally remove difficulty, but according to the present invention, can fully prevent harmful effect, remove the oxide-film that becomes embrane method to form by gas phase simultaneously heat oxide film etc.
In the processing method of semiconductor substrate of the present invention, the NH in establishing above-mentioned treatment fluid
4The concentration of OH is X[mol/L], the concentration of establishing the HF in the above-mentioned treatment fluid is Y[mol/L] time, preferably satisfy 0.30≤X/Y≤0.43 the relation and relation of 0.03≤Y≤6.0.
Like this, can more effectively prevent the oxide-film that will exist at the near surface of semiconductor substrate efficiently simultaneously, become embrane method to form by gas phase to should remaining zone causing damage.Particularly, can prevent from more effectively to cause damage, will remove by the oxide-film that gas phase become embrane method to form efficiently simultaneously to the heat oxide film that exists at the near surface of semiconductor substrate etc.That is, even identical oxide-film also can form the difference of method and suitably optionally removes according to it.
In the processing method of semiconductor substrate of the present invention, preferably use above-mentioned treatment fluid, etch reaction products or its modified material that will exist at the near surface of above-mentioned semiconductor substrate are removed.
Near surface at semiconductor substrate, if the remaining etch reaction products that should remove or its modified material, the reliability of resulting semiconductor device is significantly reduced, but according to the present invention, can fully prevent to bring harmful effect, simultaneously etch reaction products or its modified material be removed to other position of semiconductor substrate.
In the processing method of semiconductor substrate of the present invention, the NH in establishing above-mentioned treatment fluid
4The concentration of OH is X[mol/L], the concentration of establishing the HF in the above-mentioned treatment fluid is Y[mol/L] time, preferably satisfy 0.43≤X/Y≤0.78 the relation and relation of 0.03≤Y≤6.0.
Like this, can prevent more effectively that etch reaction products or its modified material that will exist at the near surface of semiconductor substrate efficiently removed simultaneously to causing damage in remaining zone.
In the processing method of semiconductor substrate of the present invention,, mix at least and contain NH preferably by in the device that above-mentioned semiconductor substrate is handled
4The 1st liquid of OH and contain the 2nd liquid of HF is modulated above-mentioned treatment fluid.
Like this, can be easy and infalliblely to the NH in the treatment fluid
4The concentration ratio of OH and HF is regulated.In addition, the kind of the semiconductor substrate that foundation should be handled etc. can be easy and infalliblely to NH
4The concentration ratio of OH and HF etc. changes.
In the processing method of semiconductor substrate of the present invention, preferably contain NH by in the device that above-mentioned semiconductor substrate is handled, mixing at least
4The 1st liquid of OH, contain the 2nd liquid and the pure water of HF, modulate above-mentioned treatment fluid.
Like this, can be easy and infalliblely to the NH in the treatment fluid
4The concentration ratio of OH and HF is regulated.In addition, the kind of the semiconductor substrate that foundation should be handled etc. can be easy and infalliblely to NH
4The concentration of OH or HF, NH
4The concentration ratio of OH and HF etc. changes.
In the processing method of semiconductor substrate of the present invention, above-mentioned treatment fluid does not preferably contain H in fact
2O
2Treatment fluid.
Like this, even semiconductor substrate (semiconductor device that should make) is even have the zone that is made of the material that contains W refractory metals such as (tungsten), can prevent more effectively that also such zone is subjected to the infringement of treatment fluid, the polluter (useless material) that optionally will exist at the near surface of semiconductor substrate is removed simultaneously.
In the processing method of semiconductor substrate of the present invention, at least a portion of preferred its near surface of above-mentioned semiconductor substrate is made of metal materials such as refractory metals.
With regard to the semiconductor substrate that should handle, under the situation that at least a portion of its near surface is made of refractory metal, in method in the past, the selective removal of polluter (useless material) is difficult especially, but according to the present invention, can prevent fully that other position (the especially position that is made of refractory metal) to semiconductor substrate from bringing harmful effect, polluter be removed simultaneously easy and infalliblely.
Semiconductor device of the present invention is characterized in that, uses method manufacturing of the present invention.
Like this, can provide a kind of reliability high semiconductor device.
E-machine of the present invention is characterized in that, possesses semiconductor device of the present invention.
Like this, can provide a kind of reliability high e-machine.
Description of drawings
Fig. 1 is the profile of the suitable execution mode of the processing method of expression semiconductor substrate of the present invention.
Fig. 2 uses the profile of an example of the method for the semiconductor device that method manufacturing of the present invention has many metal gate electrodes for expression.
Fig. 3 is the profile of an example of the method for expression application method manufacturing compensated semiconductor device of the present invention (CMOS).
Fig. 4 is the profile of an example of the method for expression application method manufacturing compensated semiconductor device of the present invention (CMOS).
Fig. 5 is the figure of ageing variation that is illustrated in the etch quantity of the oxide-film when removing semiconductor substrate behind the Etching mask and use the processing of treatment fluid.
Fig. 6 is the figure of the etch-rate of the heat oxide film (needing remaining portion) when being illustrated in the flow that makes the 1st liquid, the 2nd liquid and carrying out all change.
Among the figure: 5-semiconductor substrate, 51-need removal portions, and 52-needs remaining portion, the 61-silicon substrate, 62-grid oxidation film, the many metal gate electrodes of 63-, the 631-polysilicon film, 632-tungsten nitride film, 633-tungsten film, the 64-silicon nitride film, 65-resist figure, the useless material of 69-(needing removal portion), the 71-silicon substrate, the 72-element separates, the 73-gate insulating film, the 74-polysilicon film, 75-potential barrier metal film, 76-high melting point metal film, the 77-silicon nitride film, 78-the 1st gate electrode, 79-the 2nd gate electrode, 80-the 1st resist figure, 81-the 1st source region, 82-the 1st drain region, 83-oxide-film, the 84-particle, 85-the 2nd resist figure, 86-the 2nd source region, 87-the 2nd drain region, Rnmos-n type MOSFET forms the zone, and Rpmos-P type MOSFET forms the zone.
Embodiment
Below, the suitable execution mode about processing method, semiconductor device and the e-machine of semiconductor substrate of the present invention describes with reference to accompanying drawing.
At first, the processing method of semiconductor substrate of the present invention and the suitable execution mode of semiconductor device are described, thereafter, the e-machine that possesses above-mentioned semiconductor component is described.
Fig. 1 is the profile of the suitable execution mode of the processing method of expression semiconductor substrate of the present invention.
As shown in Figure 1, in the present embodiment, have treatment fluid and give operation (1b), it is by composing with treatment fluid the semiconductor substrate 5 (1a) that has the needs removal portion 51 that should remove at its near surface, thus the needs removal portion 51 of optionally removing semiconductor substrate 5.
(semiconductor substrate)
And semiconductor substrate is used in the manufacturing of such as described later semiconductor device of the present invention.In other words, semiconductor substrate is semiconductor device of the present invention described later by adopting method of the present invention processed (as required, and then passing through to implement processing such as film forming, etching), becoming.
As mentioned above, semiconductor substrate 5 has the needs removal portion 51 that should remove at its near surface.And, need other zone of the one side side that removal portion 51 exists, become should be remaining remaining 52 of needs.Need removal portion 51 for example by the etch products that generates by various etch processes (particularly having used CF is the dry ecthing of gas) (for example fluorocarbon be material or fluorocarbon be material oxide, have the compound of the such part-structure of Si-C-F-O etc.) or the residue of ashing (ashing) in handling, the formations such as oxide-film that become embrane method etc. to form by gas phases such as CVD.
(treatment fluid is given operation)
To above-mentioned such semiconductor substrate 5, compose treatment fluid to describe in detail later.Like this, can optionally remove the needs removal portion 51 of semiconductor substrate 5.In other words, can prevent effectively that needs removal portion 51 zone in addition of semiconductor substrate 5 is subjected to the infringement of treatment fluid, can remove the removal portion 51 that needs simultaneously.
To the method for semiconductor substrate 5 taxes with treatment fluid, be not specially limited, for example can enumerate rubbing methods such as scraper (doctor blade), brushing, roller coat (roll coater), ink-jet method, the spray-on process, infusion process (dipping (dipping) cleans), the sheet-fed (Mei Leaf that are undertaken by splash etc.) rotation cleans etc.
In addition, in this operation, for example can heat (heating) to treatment fluid, semiconductor substrate 5.Like this, can remove needs removal portion 51 expeditiously.In this case, as heating-up temperature, for example preferred 20～80 ℃, more preferably 20～30 ℃.
And, in this operation, for example can cool off treatment fluid, semiconductor substrate 5.Like this, can need the removal of removal portion 51 with higher selectivity infalliblely.In this case, as chilling temperature, for example preferred 0～20 ℃, more preferably 4～15 ℃.
In addition, in this operation, treatment fluid needs a side of 51 in removal portion to get final product so long as be assigned to having at least of semiconductor substrate 5.
And this operation can be carried out under any atmosphere such as oxidizing atmosphere, reducing atmosphere, inert atmosphere.
(matting)
Carrying out after above-mentioned such treatment fluid gives operation, cleaning usually and removed the operation that needs the semiconductor substrate 5 (semiconductor device) after the removal portion 51.The remaining NH of near surface that like this, just can effectively prevent at semiconductor substrate 5 (semiconductor device)
4OH (NH
3), the constitute of treatment fluid such as HF, make the reliability of the semiconductor device that finally obtains very high.
(treatment fluid)
The treatment fluid that uses among the present invention contains NH
4OH and HF, the NH in establishing treatment fluid
4OH concentration is X[mol/L], the HF concentration of establishing in the treatment fluid is Y[mol/L] time, satisfy 0.30≤X/Y≤0.78 the relation and relation of 0.03≤Y≤6.0.Like this, the invention is characterized in, contain NH with the normal concentration ratio by using
4The treatment fluid of OH and HF, the needs removal portion that can optionally remove semiconductor substrate.Particularly also find it is characterized in that, even need removal portion be by as oxide-film (especially heat oxide film) or W refractory metals such as (tungsten) material, Si, polysilicon etc. in treatment fluid in the past predispose to damage material constitute, can prevent effectively that also remaining of needs are undermined, remove the removal portion that needs simultaneously definitely.In addition, with regard to satisfying the treatment fluid that concerns as mentioned above, its pH is than HF height.Therefore, by adopting the satisfied treatment fluid of relation as mentioned above semiconductor substrate is handled, thereby, can make effect that the residue that prevents the polymer removed by treatment fluid on the surface of semiconductor substrate etc., modifier, particle etc. adhere to again to semiconductor substrate surface than HF height according to the relation of zeta potential.Its result is that the reliability of resulting semiconductor device is very high.
And the treatment in accordance with the present invention method does not also need large-scale device, by easier operation, just can handle semiconductor substrate efficiently.And,, therefore for example, can carry out a series of operation of the manufacturing of semiconductor device efficiently owing to do not need large-scale device.
Relative therewith, when the not enough above-mentioned lower limit of the value of X/Y, when perhaps the value of X/Y surpassed above-mentioned higher limit, optionally removing needed the removal portion difficulty that becomes.Promptly, when the not enough above-mentioned lower limit of the value of X/Y, perhaps, when the value of X/Y surpasses above-mentioned higher limit, remove needs very difficulty of removal portion infalliblely, and perhaps producing to need remaining portion to come along the harmful effect influence of bringing for the remaining portion of needs except that waiting together with needs removal portion.
As mentioned above, in the present invention, as long as the NH in the treatment fluid
4The concentration X[mol/L of OH], with treatment fluid in HF concentration be Y[mol/L], satisfy 0.30≤X/Y≤0.78 the relation and the relation of 0.03≤Y≤6.0 and get final product, the needs removal portion 51 that the value of X/Y can have according to the semiconductor substrate 5 that should handle, the combination of the remaining portion of needs etc. are suitably regulated.
For example, be to become by gas phase under the situation of the oxide-film (for example silicon oxide film) that embrane method forms in needs removal portion 51, preferably satisfy the relation of 0.30≤X/Y≤0.43, more preferably satisfy the relation of 0.37≤X/Y≤0.41.Like this, just can effectively prevent to need remaining 52 infringement that is subjected to removing liquid, efficiently simultaneously (short time and easily) will need removal portion 51 to remove.Particularly,, also can prevent from more effectively to bring infringement, will need removal portion 51 to remove simultaneously efficiently to this heat oxide film even have at semiconductor substrate 5 under the situation of heat oxide film.That is, even identical oxide-film also can suitably optionally be removed according to its difference that forms method.Relative therewith, when the not enough above-mentioned lower limit of the value of X/Y, or when surpassing above-mentioned higher limit, the problem of existence is, the etching selectivity deterioration of heat oxide film and the oxide-film that becomes embrane method formation by gas phase is bigger to the infringement of heat oxide film.
And, in needs removal portion 51 by etch reaction products or its modified material (for example is, residue when to have used CF be the dry ecthing of gas, perhaps, the fluorocarbon that generates by this dry ecthing be material or fluorocarbon be material oxide, have the etch products of the such part-structure of Si-C-F-O) under the situation about constituting, the preferred relation that satisfies 0.43≤X/Y≤0.78 more preferably satisfies the relation of 0.43≤X/Y≤0.5.Like this, need can more effectively prevent from remaining 52 infringement of being removed liquid, (short time and easy) will need removal portion 51 to remove efficiently simultaneously.Especially,, also the etch-rate of this oxide-film can be suppressed at Min., will need removal portion 51 to remove simultaneously efficiently even semiconductor substrate 5 has as the oxide-film (for example silicon oxide film) that needs remaining 52.On the contrary, if the not enough above-mentioned lower limit of the value of X/Y exists remaining of needs under the situation of oxide-film, might the etching oxidation film, the infringement of the remaining portion of needs is become big.In addition,, exist remaining of needs under the situation of Si or Poly-Si if the value of X/Y surpasses above-mentioned higher limit, might etching Si or Poly-Si, the infringement of the remaining portion of needs is become big.
And, in the concentration that treatment fluid is given each constituent of the treatment fluid that is endowed in the operation, can be substantive constant in this operation, also can change in time.For example.By making the blending ratio of the 1st such liquid of aftermentioned, the 2nd liquid (also having pure water), change in time, the interim ground of ratio or the continuity ground of each constituent are changed.
Treatment fluid used in the present invention does not preferably contain H in fact
2O
2Like this, even need remaining 52 need also can prevent from remaining 52 infringement that is subjected to treatment fluid more infalliblely, optionally will require removal portion 51 to remove simultaneously by the material formation that contains W refractory metals such as (tungsten).
The treatment fluid of giving for semiconductor substrate 5 can be modulated in advance, for example, and can to give in the device of operation (in the cleaning device) modulated carrying out treatment fluid.Like this, by giving (in the cleaning device) modulation treatment liquid in the device of operation carrying out treatment fluid, can regulate NH in the treatment fluid easy and infalliblely
4The concentration ratio of OH and HF.In addition, the kind of the semiconductor substrate 5 that foundation should be handled etc. can be easy and infalliblely to NH
4The concentration ratio of OH and HF etc. changes.In addition, cooperate NH with using ratio by with regulation
4OH compares with the situation of the treatment fluid that HF is modulated, and can reduce the manufacturing cost of semiconductor device.As giving the method for (in the cleaning device) modulation treatment liquid in the device of operation carrying out treatment fluid, for example can enumerate at least and will contain NH
4The method that the 1st treatment fluid of OH mixes with the 2nd liquid that contains HF etc.By adopting such method, thereby make aforesaid effect more remarkable.In addition, in the modulation of treatment fluid, except containing NH
4The 1st liquid of OH, contain outside the 2nd liquid of HF, also use pure water, obtain effect same when not using pure water thus, can will contain NH simultaneously
4The 1st liquid of OH suppresses lowlyer with the concentration that contains the 2nd liquid of HF.Therefore, can make operation be easier to finish to cleaning at the semiconductor substrate 5 (semiconductor device) that will need removal portion 51 to remove that carries out carrying out usually after treatment fluid is given operation.Like this, the NH that can will exist at the near surface of semiconductor substrate 5 (semiconductor device) very soon
4OH (NH
3), the constitute of treatment fluid such as HF removes.In addition, give (in the cleaning device) in the device of operation, can use to have the accommodation section that holds the 1st liquid, the 2nd liquid (also having pure water) respectively, device with mixing portion (mixing channel) that they are mixed as carrying out treatment fluid.Like this, just can give full play to aforesaid effect, will mix enough uniform treatment fluid simultaneously and compose to semiconductor substrate.In addition, as the 1st liquid, for example can enumerate ammoniacal liquor etc.In addition, as the 2nd liquid, for example can enumerate hydrofluoric acid etc.
(semiconductor device)
Semiconductor device of the present invention obtains by aforesaid method of the present invention being imposed handle.
The semiconductor device that obtains like this can will be removed the reliability height by not preferred polluter (useless material) infalliblely for semiconductor device.
In addition, in the above description, though give operation and be described with regard to only carrying out 1 treatment fluid, in the manufacturing of semiconductor device, treatment fluid is given operation and also can be carried out repeatedly.For example, give operation (the 1st treatment fluid is given operation) afterwards carrying out treatment fluid, impose processing such as film forming, oxidation, and then can carry out treatment fluid and give operation (the 1st treatment fluid is given operation).Like this, just, can access the higher semiconductor device of reliability.In addition, more complicated even the semiconductor device that should make constitutes, also can make its reliability enough high.
In addition, as mentioned above, give under the situation of operation repeatedly carrying out treatment fluid, can carry out these operations under the substantially identical condition, also can under different conditions, carry out (for example, can be the different situation of concentration of each constituent of treatment fluid).
Then, the execution mode more specifically to method of the present invention describes.
Fig. 2 is the profile of an example of the expression method of using the semiconductor device that method manufacturing of the present invention has many metal gates.
At first, shown in Fig. 2 (2a), on silicon substrate 61, form after the grid oxidation film 62 by thermal oxidation method, on grid oxidation film 62, pile up polysilicon film 631, tungsten nitride film 632 and the tungsten film 633 of the material that becomes many metal gate electrodes successively, on tungsten film 633 pile up silicon nitride film 64 thereafter.Then, on nitride film silicon 64, form gate electrode is formed the resist figure 65 that the zone covers.
Then, shown in Fig. 2 (2b), with resist figure 65 as mask, successively silicon nitride film 64, tungsten film 633, tungsten nitride film 632 and polysilicon film 631 are carried out dry ecthing, on silicon substrate 61, form many metal gate electrodes 63 of forming by polysilicon film 631, tungsten nitride film 632 and tungsten film 633 by grid oxidation film 62.
Then, shown in Fig. 2 (2c), resist figure 65 is removed by ashing.
Then, use aforesaid treatment fluid, clean silicon substrate 61.Like this, just, useless material 69 such as resist residue, particle and polymer (dry ecthing polymer) is removed (with reference to (2c) (2d)).Particularly, can fully prevent from the position that should not remove (for example, constituting the tungsten nitride film 632 of many metal gate electrodes 63 and tungsten film 633 etc.) brought harmful effect, aforesaid useless material 69 (needing removal portion) be removed simultaneously infalliblely.
In addition, in the above description, though use tungsten (W) as refractory metal, but for example also can use Mo, Ta etc. as refractory metal, the metal silicide film (WSix, MoSix, TaSix, TiSix) of W, Mo, Ta, Ti etc. etc. can also be used, nitride or Al, AlCu, the metal materials such as AlSiCu, Cu etc. of W, Mo, Ta, Ti etc. can also be used.
Then, describe using the method that the present invention makes compensated semiconductor device (CMOS).
Fig. 3, Fig. 4 are the profile of an example of the method for expression application method manufacturing compensated semiconductor device of the present invention (CMOS).
At first, on silicon substrate 71, form the element of forming by STI and separate 72, n type MOSFET formation region R nmos and p type MOSFET formation region R pmos are stipulated (with reference to (3a)).Then, on silicon substrate 71, pile up refractory metal film 76 and silicon nitride films 77 such as the gate insulating film 73 formed by silicon oxide film, polysilicon film 74, potential barrier metal film 75, for example tungsten film successively.Then, after use forms gate electrode resist figure (omitting diagram) that the zone covers silicon nitride film 77 is carried out etching, by ashing this resist figure is removed, thereafter, use forms the silicon nitride film 77 (hard mask) behind the figure, and high melting point metal film 76, potential barrier metal film 75, polysilicon film 74 and gate insulating film 73 are carried out etching.Like this, shown in Fig. 3 (3a), on the n type MOSFET formation region R nmos and on the p type MOSFET formation region R pmos, form the 1st gate electrode 78 and the 2nd gate electrode 79 that constitute by polysilicon film 74, potential barrier metal film 75 and high melting point metal film 76 respectively.
Then, shown in Fig. 3 (3b), after 80s at the 1st resist figure that forms the p type MOSFET formation region R pmos covering that will comprise above the 2nd gate electrode 79, the 1st resist figure 80 and the 1st gate electrode 78 are injected n type impurity (for example arsenic) as mask to silicon substrate 71.Like this, form formation the 1st source region 81 and the 1st drain region 82 on the region R nmos at n type MOSFET.
Then, shown in Fig. 3 (3c),, the 1st resist figure 80 is removed by having used the ashing treatment of oxygen plasma.At this moment, form thin oxide-film 83, separate on 72 or the remaining particle 84 in side of the 2nd gate electrode 79 at element simultaneously on the surface of silicon substrate 71 or on the surface of polysilicon film 74 that constitutes the 2nd gate electrode 79 and high melting point metal film 76 etc.When injecting above-mentioned impurity (for example arsenic), suffer damage especially easily because element separates the end of the 1st resist figure 80 on 72, so particle 84 remaining many especially trend are arranged in the element separation 72.
Therefore, in the present embodiment, after the 1st resist figure 80 being removed, shown in Fig. 4 (4a),, can efficiently particle 84 be come along together with oxide-film 83 and remove by using the processing of aforesaid treatment fluid by ashing treatment.Like this, just, can be infalliblely the surface of silicon substrate 71 be purified.
Then, shown in Fig. 4 (4b), after the 2nd resist figure 85 that forms the n type MOSFET formation region R nmos covering that will include on the 1st gate electrode 78, the 2nd resist figure 85 and the 2nd gate electrode 79 are injected p type impurity, for example boron as mask to silicon substrate 71.Like this, form region R pmos at p type MOSFET and form the 2nd source region 86 and the 2nd drain region 87.
Then, shown in Fig. 4 (4c), after the 2nd resist figure 85 was removed in the ashing by having used oxygen plasma, the processing by using aforesaid treatment fluid was with the surface cleaning of silicon substrate 71.
By the operation of above explanation, obtain having the CMOS of n type MOSFET and p type MOSFET.
According to present embodiment, owing to use aforesaid treatment fluid, the substrate that forms gate electrode is cleaned, therefore, for example compare with the situation that use contains the cleaning fluid of aquae hydrogenii dioxidi, etch-rate be can reduce greatly, particle, resist residue, polymer etc. removed simultaneously infalliblely for refractory metal.Therefore, owing to the dissolving of the refractory metal that can prevent to contain in the gate electrode, while infallible ground cleaning base plate is so can obtain the high semiconductor device of reliability more infalliblely.
Then, describe possessing the semi-conductive e-machine (electronic equipment) of using aforesaid method of the present invention and obtaining.
E-machine of the present invention possesses the semiconductor device of using aforesaid method of the present invention and obtaining.As such e-machine, for example can enumerate: liquid crystal panel, and the projection type image display apparatus (crystal projection view) that possesses this liquid crystal panel, PC, portable phone, digital camera, ink jet type blowoff (for example ink-jet printer), television set, video tape recorder, automobile navigation apparatus, beep-pager, electronic memo (also subsidiary communication function), electronic computer, electronic game machine, word processor, work station, visual telephone, the delinquency prevention televimonitor, the electronics binoculars, the POS terminal, medical machine (electrothermometer for example, sphygmomanometer, blood-glucose meter, the electrocardiogram measuring device, diagnostic ultrasound equipment, fujinon electronic video endoscope), fish finder, various mensuration machines, instrument class (vehicle for example, airborne vehicle, the instrument class of boats and ships), aerolog etc.
More than, according to illustrated execution mode, processing method, semiconductor device and the e-machine of semiconductor substrate of the present invention is described, but the present invention is not limited only to this.
For example, in processing method of the present invention, can append the operation of the above any purpose in 1 road or 2 roads.For example, also can have the matting of having used aforesaid treatment fluid liquid in addition.
And in the above description, treatment fluid used in the present invention is as containing NH
4The liquid of OH and HF is illustrated, but also can contain composition (for example, O in addition
3Deng).
(embodiment 1)
[making of semiconductor substrate]
At first, prepared silicon substrate.
At O
2/ N
2In the mixed-gas atmosphere, this silicon substrate is imposed 750 ℃ * 47 minutes thermal oxidation, thereby form oxide-film on the surface of silicon substrate.The thickness of formed oxide-film is 5.5nm.
Thereafter, on above-mentioned heat oxide film, at the Si of 0.10kPa (OC
2H
5)
4Make TEOS film (cvd film) carry out the film forming of 20nm in the gas atmosphere and under 660 ℃ * 4.9 minutes condition, and then on the TEOS film, at the SiH of 0.03kPa
2Cl
2/ NH
3/ N
2Make Si in the mixed-gas atmosphere and under 760 ℃ * 59 minutes condition
3N
4Film carries out the film forming of 150nm.
Then, on the surface of oxide-film, cover Etching mask.
Then, be gas (CF by having used CF
4/ O
2/ HBr/Cl
2Mist) dry ecthing, with the Si of the part that do not cover by Etching mask
3N
4Film is removed fully.The thickness of the oxide-film after the dry ecthing (the not position that is covered by Etching mask) is 15nm, and heat oxide film and TEOS film do not have etched and residual.
Then, pass through O
2Etching mask is removed in the ashing of gas, obtains being applied to the semiconductor substrate of processing as described below (using the processing of treatment fluid).The surface of the semiconductor substrate after carrying out ashing (silicon substrate) with oxide-film, the remaining modifier that Etching mask arranged, residue etc. (useless material).
(processing of being undertaken by treatment fluid)
For the semiconductor substrate that obtains as mentioned above, use ratio to contain HF and NH with regulation
4The treatment fluid of OH is handled.
By the processing that treatment fluid carries out, carry out according to following.
At first, place the semiconductor substrate that obtains as mentioned above in the sheet-fed rotary cleaning device and be fixed on the treatment bench, make it to rotate simultaneously,, give and to contain NH to semiconductor substrate by nozzle towards semiconductor substrate with platform
4The 1st liquid of OH and contain the 2nd liquid of HF and the treatment fluid that pure water mixes.Wherein, the modulation of this treatment fluid is to be undertaken by mixing the 1st liquid, the 2nd liquid and pure water in pipe arrangement mixing portion midway.Processing time by treatment fluid is 1 minute.At this moment, use NH
4OH concentration is 7.45[mol/L] ammoniacal liquor (mixture of ammonia and pure water) as the 1st liquid; Use HF concentration to be 28.65[mol/L] hydrofluoric acid (mixture of hydrogen fluoride and pure water) as the 2nd liquid.In addition, be adjusted in the flow of the mixed various liquid of mixing portion, and to make the flow of the 1st liquid be that the flow of 35ml/ branch, the 2nd liquid is that the flow of 20ml/ branch, pure water is the 2000ml/ branch.That is, with the NH in the treatment fluid
4The concentration X[mol/L of OH] with the concentration Y[mol/L of HF] ratio (X/Y) be 0.46 and the mode of X=0.129, Y=0.28 regulate.
, stop to supply with 1st liquid, 2nd liquid, carry out the cleaning (washing) of semiconductor substrate by pure water thereafter.In imposing the semiconductor substrate of handling as mentioned above, the thickness of oxide-film (position that does not have Etching mask to cover) is 5.4nm, and after the TEOS film was removed, the remaining infalliblely heat oxide film of meeting or not substantially not suffer damage.
(removal of the oxide-film by wet etching)
To imposing the semiconductor substrate (semiconductor device) after the aforesaid processing, implement to have used the wet etching of diluted hydrofluoric acid, the etch quantity of research wet etching time and oxide-film relevant.Its result is, shown in the solid line of Fig. 5, the relevant straight line of expression wet etching time and the etch quantity of oxide-film is through zero crossing.Hence one can see that, by having used the processing of aforesaid treatment fluid, can be infalliblely useless materials (polluter) such as the modifier of Etching mask, residue be removed.
Then, as shown in table 1 except using like that to NH
4Beyond the treatment fluid that the concentration of OH, HF changes, to the semiconductor substrate of above-mentioned same making, with above-mentioned processing, the washing of carrying out equally by treatment fluid.Its result is as treatment fluid, to use NH
4The concentration X[mol/L of OH] and the concentration Y[mol/L of HF] between set up under the situation of liquid of relation of X/Y＜030 or X/Y＞0.78, can expose the silicon of substrate with being that the oxide-film at the gas position that imposes dry ecthing is removed by CF.That is,, under the situation of the liquid that the relation of using X/Y＜030 or X/Y＞0.78 is set up, the oxide-film as the remaining portion of needs can be removed, bring infringement to semiconductor substrate as treatment fluid.
, about these semiconductor substrates (semiconductor device), with above-mentioned same, implement wet etching by diluted hydrofluoric acid, the etch quantity of research wet etching time and oxide-film relevant thereafter.Here, the relevant straight line that will represent the etch quantity of wet etching time and oxide-film shown in solid line among Fig. 5 like that is zero through the average evaluation of zero crossing; With the relevant straight line of representing wet etching time and the etch quantity of oxide-film as shown in phantom in Figure 5 like that not through the average evaluation of zero crossing for *, its result is as shown in table 1.In addition, NH
4The concentration change of OH, HF is to carry out from the quantity delivered of the various liquid (the 1st liquid, the 2nd liquid and pure water) of each nozzle by change.
Table 1
| Treatment fluid No. | The 1st fluid flow (ml/ branch) | The 2nd fluid flow (ml/ branch) | Pure water flow (ml/ branch) | X[mol/L] | Y[mol/L] | X/Y | Infringement to semiconductor substrate | The removal of useless material |
| 1 | 0 | 20 | 4000 | 0 | 0.14 | 0 | Have | ○ |
| 2 | 15 | 20 | 4000 | 0.027 | 0.14 | 0.20 | Have | ○ |
| 3 | 20 | 20 | 4000 | 0.037 | 0.14 | 0.26 | Have | ○ |
| 4 | 25 | 20 | 4000 | 0.046 | 0.14 | 0.33 | Do not have | ○ |
| 5 | 30 | 20 | 4000 | 0.055 | 0.14 | 0.39 | Do not have | ○ |
| 6 | 35 | 20 | 4000 | 0.065 | 0.14 | 0.45 | Do not have | ○ |
| 7 | 40 | 20 | 4000 | 0.074 | 0.14 | 0.52 | Do not have | ○ |
| 8 | 45 | 20 | 4000 | 0.083 | 0.14 | 0.58 | Do not have | ○ |
| 9 | 50 | 20 | 4000 | 0.092 | 0.14 | 0.65 | Do not have | ○ |
| 10 | 55 | 20 | 4000 | 0.101 | 0.14 | 0.72 | Do not have | ○ |
| 11 | 60 | 20 | 4000 | 0.110 | 0.14 | 0.78 | Do not have | ○ |
| 12 | 65 | 20 | 4000 | 0.119 | 0.14 | 0.85 | Do not have | × |
| 13 | 70 | 20 | 4000 | 0.128 | 0.14 | 0.91 | Do not have | × |
Can know clearly by table 1,, use NH as treatment fluid
4The concentration X[mol/L of OH] and the concentration Y[mol/L of HF] satisfy under the situation of liquid of 0.30≤X/Y≤0.78 the relation and the relation of 0.03≤Y≤6.0, the relevant straight line of expression wet etching time and the etch quantity of oxide-film is through zero crossing.Relative therewith, as treatment fluid, using NH
4The concentration X[mol/L of OH] and the concentration Y[mol/L of HF] between under the situation of the liquid set up of the relation of X/Y＜030 or X/Y＞0.78, the relevant straight line of expression wet etching time and the etch quantity of oxide-film is without zero point.Hence one can see that, under the situation of using such treatment fluid, can't be infalliblely useless materials (polluter) such as the modifier of Etching mask, residue be removed.
(embodiment 2)
[making of semiconductor substrate]
At first, prepared silicon substrate.
At O
2/ N
2In the mixed-gas atmosphere, impose 750 ℃ * 47 minutes thermal oxidation, form heat oxide film on the surface of silicon substrate thus for this silicon substrate.The thickness of formed heat oxide film is 5.5nm.
Thereafter, on above-mentioned heat oxide film, at the Si of 0.10kPa (OC
2H
5)
4Make TEOS film (cvd film) carry out the film forming of 10nm in the gas atmosphere and under 660 ℃ * 2.5 minutes condition, and then on the TEOS film, at the SiH of 0.04kPa
4Make the Poly-Si film carry out the film forming of 200nm in the mixed-gas atmosphere and under 610 ℃ * 22.5 minutes condition.
Then, on the surface of heat oxide film, cover Etching mask.
Then, be gas (CF by having used CF
4/ O
2/ HBr/Cl
2Mist) dry ecthing, the Poly-Si of the part that do not covered by Etching mask is removed fully.That is, by imposing dry ecthing, the Poly-Si at the position that will be covered by Etching mask is residual, and the Poly-Si at the position beyond it is removed.The thickness of the oxide-film (the not position that is covered by Etching mask) after the dry ecthing is 15nm, and heat oxide film and TEOS film are not etched and residual.
Then, pass through O
2Etching mask is removed in the ashing of gas, obtains being applied to the semiconductor substrate of processing as described below (using the processing of treatment fluid).The surface of the semiconductor substrate after carrying out ashing (silicon substrate) with heat oxide film, CVD oxide-film, Poly-Si film, (useless materials) such as the modifier of remaining Etching mask, residues.
(processing of being undertaken by heat treatment solution)
For the semiconductor substrate that obtains as mentioned above, use ratio to contain HF and NH with regulation
4The treatment fluid of OH is handled.
By the processing that treatment fluid carries out, carry out according to following.
At first, place the semiconductor substrate that obtains as mentioned above in the sheet-fed rotary cleaning device and be fixed on the treatment bench, make it to rotate simultaneously,, give and to contain NH to semiconductor substrate from nozzle towards semiconductor substrate with platform
4The 1st liquid of OH and contain the treatment fluid that the 2nd liquid of HF mixes, the appearance of observing at this moment heat oxide film, Poly-Si film and CVD oxide-film.In addition, the modulation of this treatment fluid is by in pipe arrangement mixing portion midway the 1st liquid and the mixing of the 2nd liquid being carried out.At this moment, use NH
4The concentration of OH is 7.45[mol/L] ammoniacal liquor (mixture of ammonia and pure water) as the 1st liquid; Use the concentration of HF to be 28.65[mol/L] hydrofluoric acid (mixture of hydrogen fluoride and pure water) as the 2nd liquid.
In addition, for with the semiconductor substrate of above-mentioned same making, change the flow (quantity delivered) of the 1st liquid, the 2nd liquid respectively, in addition, with the above-mentioned processing of carrying out equally by treatment fluid, observe the appearance of at this moment heat oxide film, Poly-Si film and CVD oxide-film.
Its result is under the situation of using the treatment fluid that satisfies 0.30≤X/Y≤0.78 the relation and the relation of 0.03≤Y≤6.0, fully to prevent from heat oxide film, Poly-Si etc. is brought harmful effect the rapid simultaneously CVD oxide-film of removing.Especially under the situation of the treatment fluid that uses the relation that satisfies 0.30≤X/Y≤0.43, can fully prevent from heat oxide film, Poly-Si etc. is brought harmful effect, in shorter time, the CVD oxide-film be removed simultaneously infalliblely.Relative therewith, under the situation of the treatment fluid that uses the relation that does not satisfy 0.30≤X/Y≤0.78, promptly, as treatment fluid, under the situation of the liquid that the relation of using X/Y＜0.30 or X/Y＞0.78 is set up, the problem that exists has: will come along together with the CVD oxide-film of removing portion as needs as the heat oxide film of the remaining portion of needs and remove, and bring infringement perhaps for the Poly-Si as the remaining portion of needs, and perhaps can not fully remove as the CVD oxide-film that needs removal portion etc.
And as mentioned above, the etch-rate of the heat oxide film during with the flow generation many variations that makes the 1st liquid, the 2nd liquid (needing remaining portion) is shown in Fig. 6.
As shown in Figure 6, under the situation of the treatment fluid that uses the relation that satisfies 0.30≤X/Y≤0.78, can make the etch-rate of heat oxide film enough little.
(embodiment 3)
The method illustrated according to above-mentioned execution mode made the semiconductor device with many metal gate electrodes as shown in Figure 2.
At this moment, same with the foregoing description, make the NH in the treatment fluid
4The concentration X[mol/L of OH] and the concentration Y[mol/L of HF] change.
Its result is to obtain the result same with the foregoing description.Promptly, under the situation of using the treatment fluid that satisfies 0.30≤X/Y≤0.78 the relation and the relation of 0.03≤Y≤6.0, can give not need remaining (constituting the tungsten nitride film 632 of many metal gate electrodes 63 and tungsten film 633 etc.) to bring harmful effect, can useless material such as resist residue, particle and polymer (dry ecthing polymer) be removed infalliblely.Relative therewith, under the situation of the treatment fluid that uses the relation that does not satisfy 0.30≤X/Y≤0.78, promptly, under the situation of liquid that the relation of using X/Y＜0.30 or X/Y＞0.78 is set up as treatment fluid, the problem that exists has: will need remaining portion to come along together with useless material and remove, and perhaps can't fully useless material (needing removal portion) be removed etc.
(embodiment 4)
By Fig. 3～method shown in Figure 4 that illustrates in the above-described embodiment, make compensated semiconductor device (CMOS).
At this moment, same with the foregoing description, make the NH in the treatment fluid
4The concentration X[mol/L of OH] and the concentration Y[mol/L of HF] change.
Its result is to obtain the result same with the foregoing description.Promptly, under the situation of using the treatment fluid that satisfies 0.30≤X/Y≤0.78 the relation and the relation of 0.03≤Y≤6.0, can give not need remaining (position that constitutes by refractory metal etc.) to bring harmful effect, can useless material such as resist residue, particle and polymer (dry ecthing polymer) be removed infalliblely.Relative therewith, under the situation of the treatment fluid that uses the relation that does not satisfy 0.30≤X/Y≤0.78, promptly, under the situation of liquid that the relation of using X/Y＜0.30 or X/Y＞0.78 is set up as treatment fluid, the problem that exists has: will need remaining portion to come along and remove together with useless material, and perhaps can't be fully with useless material (needing removal portion).
(embodiment 5)
Same with above-mentioned execution mode, use the treatment fluid that satisfies 0.30≤X/Y≤0.78 the relation and the relation of 0.03≤Y≤6.0, make liquid crystal panel, and then make the projection type image display apparatus that possesses this liquid crystal panel.Its result, in the projection type image display apparatus that obtains, can be in considerable time the image of clear display and excellent contrast.That is, possess the e-machine of semiconductor device of the present invention, reliability is very high.
Claims (11)
1, a kind of processing method of semiconductor substrate, its use contains NH
4The treatment fluid of OH and HF is handled semiconductor substrate,
NH in establishing described treatment fluid
4The concentration of OH is X[mol/L], the concentration of establishing the HF in the described treatment fluid is Y[mol/L] time, satisfy 0.30≤X/Y≤0.78 the relation and relation of 0.03≤Y≤6.0.
2, the processing method of semiconductor substrate according to claim 1, wherein,
Use described treatment fluid, the oxide-film that will exist at the near surface of described semiconductor substrate, become embrane method to form by gas phase is removed.
3, the processing method of semiconductor substrate according to claim 2, wherein,
NH in establishing described treatment fluid
4The concentration of OH is X[mol/L], the concentration of establishing the HF in the described treatment fluid is Y[mol/L] time, satisfy 0.30≤X/Y≤0.43 the relation and relation of 0.03≤Y≤6.0.
4, the processing method of semiconductor substrate according to claim 1, wherein,
Use described treatment fluid, etch reaction products or its modified material that will exist at the near surface of described semiconductor substrate are removed.
5, the processing method of semiconductor substrate according to claim 4, wherein,
NH in establishing described treatment fluid
4The concentration of OH is X[mol/L], the concentration of establishing the HF in the described treatment fluid is Y[mol/L] time, satisfy 0.43≤X/Y≤0.78 the relation and relation of 0.03≤Y≤6.0.
6, the processing method of semiconductor substrate according to claim 1, wherein,
In the device that described semiconductor substrate is handled, contain NH by mixing at least
4The 1st liquid of OH and contain the 2nd liquid of HF is modulated described treatment fluid.
7, the processing method of semiconductor substrate according to claim 1, wherein,
In the device that described semiconductor substrate is handled, contain NH by mixing at least
4The 1st liquid of OH, contain the 2nd liquid and the pure water of HF, modulate described treatment fluid.
8, the processing method of semiconductor substrate according to claim 1, wherein,
Described treatment fluid does not contain H in fact
2O
2
9, the processing method of semiconductor substrate according to claim 1, wherein,
Described semiconductor substrate, at least a portion of its near surface is made of metal materials such as refractory metals.
10, a kind of semiconductor device, wherein,
Use the described method of claim 1 to make.
11, a kind of e-machine, wherein,
Possesses the described semiconductor device of claim 10.
Applications Claiming Priority (3)
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|---|---|---|---|
| JP2004370228 | 2004-12-21 | ||
| JP2004370228 | 2004-12-21 | ||
| JP2005274764 | 2005-09-21 |
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| Publication Number | Publication Date |
|---|---|
| CN1808697A true CN1808697A (en) | 2006-07-26 |
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ID=36840505
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|---|---|---|---|
| CN 200510133836 Pending CN1808697A (en) | 2004-12-21 | 2005-12-21 | Semiconductor substrate treating method, semiconductor component and electronic appliance |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI648792B (en) * | 2016-09-26 | 2019-01-21 | 日商斯庫林集團股份有限公司 | Method for preparing substrate cleaning formula, device for preparing substrate cleaning formula, and computer program product |
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2005
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI648792B (en) * | 2016-09-26 | 2019-01-21 | 日商斯庫林集團股份有限公司 | Method for preparing substrate cleaning formula, device for preparing substrate cleaning formula, and computer program product |
| CN109661718A (en) * | 2016-09-26 | 2019-04-19 | 株式会社斯库林集团 | Substrate-cleaning method, base-plate cleaning regulation creating method and base-plate cleaning regulation implementing device |
| CN109661718B (en) * | 2016-09-26 | 2023-05-05 | 株式会社斯库林集团 | Substrate cleaning method, substrate cleaning protocol creating method, and substrate cleaning protocol creating apparatus |
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