CN1806471A - Light-emitting device, method for producing same, and display - Google Patents

Light-emitting device, method for producing same, and display Download PDF

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Publication number
CN1806471A
CN1806471A CN 200480016589 CN200480016589A CN1806471A CN 1806471 A CN1806471 A CN 1806471A CN 200480016589 CN200480016589 CN 200480016589 CN 200480016589 A CN200480016589 A CN 200480016589A CN 1806471 A CN1806471 A CN 1806471A
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light
electrode
substrate
emitting component
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CN100484351C (en
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小野雅行
堀贤哉
青山俊之
小田桐优
名古久美男
长谷川贤治
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

A light-emitting device is disclosed which comprises a transparent or semitransparent first substrate, a second substrate arranged opposite to the first substrate, a transparent or semitransparent first electrode formed on the first substrate, a second electrode which is so formed on the second substrate as to be opposite to the first electrode, and a light-emitting layer interposed between the first electrode and the second electrode. The light-emitting layer contains a metal oxide semiconductor porous body by the surface of which a light-emitting organic material is supported.

Description

Light-emitting component and manufacture method thereof, display unit
Technical field
The present invention relates to can be used as in active display, communication, illumination etc. light-emitting component that the various light sources that use use and should the display unit of this light-emitting component.
Background technology
In recent years, in the display unit of plane, electroluminescence (EL) element is expressed expectation.This EL element has following feature,, has advantages such as spontaneous luminescence, visuality is excellent, the visual angle is wide, response speed is fast that is.
In the current EL element that is practical, have as luminescent material and utilized the inorganic EL element of inorganic material and utilized the organic EL of organic material as light-emitting component.Used the inorganic EL element of inorganic material such as zinc sulphide, so have because it drive to need problems such as higher alternating voltage drive circuit complexity or brightness is low, practicability can't be made progress.
On the other hand, with the organic material is the organic EL of luminescent material, by at 2 layers of element that constitutes (for example, the Applied Physics Letters that hole transporting layer and organic luminous layer stacked above one another are formed by propositions such as Tang in 1987,51,1987, P913), with 10V or the driving voltage below it, obtain brightness 1000cd/m 2Or it is above luminous, and taking this as an opportunity, and until recently, research and development are in progress apace.
Below, for the current organic EL of generally being discussed, utilize Figure 23 to describe.This organic EL 200 is transparent or semitransparent hole injecting electrodes 2 of stacked above one another, hole transporting layer 3, emitter 6, electron injection electrode 7 and form on transparent substrate 1.In addition, also between hole injecting electrode 2 and hole transporting layer 3, hole injection layer is set sometimes, perhaps between emitter 6 and electron injection electrode 7, electron supplying layer is set, so with the interface of electron injection electrode 7 on electron injecting layer is set.
As hole injecting electrode, use ITO (indium tin oxide) film as nesa coating.The ITO film for making its transparency improve or reduce the purpose of resistivity, waits film forming by sputtering method, electron beam evaporation plating method, ion plating method.
As hole transporting layer, used N, N '-two (3-aminomethyl phenyl)-N, the diamine derivative that N '-diphenylbenzidine (TPD) etc., tang use.These materials, the general transparency is excellent, even also substantial transparent of the thickness about 80nm.
As emitter, same with the report of tang, normally the electron transport luminescent material with three (the 8-quinoline closes) aluminium (Alq3) etc. forms the structure that tens of nm thickness adopt by vacuum evaporation.For the purpose that realizes various glow colors etc., emitter is made as thin film sometimes, adopts about the stacked 20nm of electron supplying layer, so-called dual heterogeneous structure.
As electron injection electrode, adopt as the MgAg alloy of proposition such as tang or AlLi alloy etc., the alloy of the metal that metal that the low electronics injection barrier of work function is low and work function are relatively large and stable, the perhaps multilayer electrode of various electron injecting layers such as LiF and aluminium etc.
In addition, known have the organic EL display that in the driving of each pixel, adopts low-temperature polysilicon film transistor (TFT) (for example, Journal of the Society for InformationDisplay, Vol.8, No.2, P93-97).
And then, when realizing display unit, generally adopt circular polarizing disk in the lump.This is in order to prevent the alloy electrode surface at the MgAg alloy that is applied to electron injection electrode etc., the external light reflection that incident is come in display unit, the situation that contrast reduces.
Use in the past the display unit of organic EL, on transparency carrier, form transparent hole injecting electrode, organic layer, electron injection electrode in turn, become from the hole injecting electrode side-draw and go out luminous structure.And then under the situation of the display unit of the active array type that is provided with the thin-film transistor that drives each pixel, there is the shortcoming that is difficult to obtain bigger aperture opening ratio by configuration thin-film transistor on transparency carrier.
For the aperture opening ratio that improves active matrix type display is realized high brightnessization, below the substrate that has proposed to be formed with thin-film transistor is configured in, the structure of taking-up light above subtend (" helping high brightness, high meticulous Top Emission structure ", Trigger, October number (2001) pp12-13).
Utilize Figure 24 to illustrate from the organic EL of the structure of top taking-up light.This organic EL 210 is stacked above one another hole injecting electrode 2, hole transporting layer 3, emitter 6, transparent electron injection electrode 7, protective layers 211 and form on substrate 1.This organic EL, different with organic EL 200 shown in Figure 23, on electron injection electrode, need permeability.In above-mentioned motion, as transparent electron injection electrode, the thin layer that the MgAg alloy of propositions such as tang is made as about 10nm uses.In addition, use transparent resin film etc. as protective layer.
Under the situation of the light-emitting component of the structure of top taking-up light, just necessarily require permeability for the superincumbent electrode of configuration.Therefore, will form after the thin-film transistor on the back substrate below being configured in, stacked above one another comprises the luminescent layer of organic material etc., and then form transparency electrode thereafter, but generally as under the situation of the ITO that transparency electrode adopted because the thermal impact during film forming, with regard to the organic layer deterioration that produced lower floor or can not get sufficient charge carrier and inject such problem.In addition, as shown in figure 24, under the situation of the organic EL 210 of the structure that light takes out from above,, on light taking-up face, will use thin metal film or resin molding for electron injection electrode 7 is made as transparency electrode.General organic EL, can produce deteriorations such as brightness reduction and dim spot increase because of the influence that is subjected to moisture and oxygen, but when using on the taking-up face of light under the situation of thin metal film or resin molding, compare with glass substrate etc., because relatively poor in the block of moisture and oxygen, so problem that will the producing component lifetime.Like this, the light-emitting component from the structure of top taking-up light being easy to realize the opposite one side of bigger aperture opening ratio, is difficult to satisfy simultaneously high brightness and high reliability, longevity exactly.
In addition, as the characteristic of display unit, wish high brightness and longevity.But in the display unit of having used organic EL, produced following problem, that is, when increasing in order to improve brightness when flowing through as the current density on the organic material of luminescent material, the easy deterioration of organic material, the life-span will shorten.
On the other hand, realize the method for high brightnessization, the method for the contact area that increases electrode and emitter is arranged as the light beam that obtains by the emitter that increases by organic EL.In order to increase the contact area of electrode and emitter, for example have on the surface of the transparency carrier of light-emitting component, to form concavo-convex method, and and then the hole injecting electrode pattern is formed on method on concavo-convex etc.But in above-mentioned method, the surface area of organic EL only increases and is in the past about 2～3 times, fails to make leaping property of surface area ground to increase.
In addition, in organic EL display in the past, because each organic layer is a film, so, need critically control its thickness, when the membrane thickness unevenness of each organic layer, the inner evenness of luminosity is insufficient sometimes.
And then, in organic EL display in the past,, have because circular polarizing disk from the luminous problem that also decays of organic EL, in this, also is difficult to realize high brightness though proposed the external light reflection countermeasure that realizes by circular polarizing disk.
Summary of the invention
The purpose of this invention is to provide the good and long service life of the inner evenness of a kind of high brightness, luminosity, luminescent quality stable above get the light-emitting component of light structure, with and manufacture method and used the display unit of this light-emitting component.
Light-emitting component of the present invention is characterized in that, possesses:
The 1st transparent or semitransparent substrate;
The 2nd substrate that relatively is provided with above-mentioned the 1st substrate;
Be located at the 1st transparent or semitransparent electrode on above-mentioned the 1st substrate;
Relatively be located at the 2nd electrode on above-mentioned the 2nd substrate with above-mentioned the 1st electrode;
Comprise and carry on a shoulder pole the metal-oxide semiconductor (MOS) porous body of holding the photism organic material from the teeth outwards, be sandwiched in the emitter between above-mentioned the 1st electrode and above-mentioned the 2nd electrode.
In addition, above-mentioned metal-oxide semiconductor (MOS) porous body also can be the porous body that is made of the metal-oxide semiconductor (MOS) particle powder.And then above-mentioned metal-oxide semiconductor (MOS) particle powder is the particle powder that is made of n N-type semiconductor N material.And then above-mentioned photism organic material preferably utilizes chemisorbed to be held on the above-mentioned metal-oxide semiconductor (MOS) porous body surface by load.
In addition, it is characterized in that, between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, except above-mentioned emitter, further possesses at least 1 organic layer, above-mentioned organic layer contains the organic material with cementability, and the above-mentioned layer that contains the organic material with cementability as adhesive linkage, is fitted its layer up and down.In addition, above-mentioned organic material with cementability also can comprise the macromolecular material at least.
In addition, it is characterized in that above-mentioned transparent or semitransparent substrate is a glass substrate.
In addition, it is characterized in that further possessing the low-index layer that is clamped between above-mentioned transparent or semitransparent substrate and the above-mentioned electron injecting layer.
In addition, it is characterized in that, further possess in spreading all over whole above-mentioned organic layer scattered spacer, by above-mentioned spacer, stipulate the thickness of above-mentioned organic layer.And then it is characterized in that above-mentioned spacer is granular, and be transparent or semitransparent.And then it is characterized in that above-mentioned spacer is made of the insulating properties material.And then the particle diameter that it is characterized in that above-mentioned spacer is in the scope of 0.01 μ m～10 μ m.
In addition, it is characterized in that above-mentioned the 1st electrode is an electron injection electrode, above-mentioned the 2nd electrode is a hole injecting electrode, and above-mentioned organic layer is hole transporting layer, and above-mentioned hole transporting layer as adhesive linkage, is fitted its layer up and down.And then, also can further possess the electron supplying layer that is clamped between above-mentioned electron injection electrode and the above-mentioned emitter.In addition, also can further possess the hole injection layer that is clamped between above-mentioned hole injecting electrode and the above-mentioned hole transporting layer.
In addition, it is characterized in that above-mentioned the 1st electrode is a hole injecting electrode, above-mentioned the 2nd electrode is an electron injection electrode, and above-mentioned organic layer is hole transporting layer, as adhesive linkage, its layer is up and down fitted above-mentioned hole transporting layer.And then, also can further possess the electron supplying layer that is clamped between above-mentioned electron injection electrode and the above-mentioned emitter.In addition, also can further possess the hole injection layer that is clamped between above-mentioned hole injecting electrode and the above-mentioned hole transporting layer.
In addition, it is characterized in that, above-mentioned the 1st electrode is an electron injection electrode, above-mentioned the 2nd electrode is a hole injecting electrode, and except above-mentioned emitter, also possesses hole transporting layer between above-mentioned emitter and above-mentioned hole injecting electrode, and, above-mentioned organic layer is an electron supplying layer, as adhesive linkage, its layer is up and down fitted above-mentioned electron supplying layer.And then, also can further possess the hole injection layer that is clamped between above-mentioned hole injecting electrode and the above-mentioned hole transporting layer.
In addition, it is characterized in that, above-mentioned the 1st electrode is a hole injecting electrode, and above-mentioned the 2nd electrode is an electron injection electrode, and, except above-mentioned emitter, between above-mentioned emitter and above-mentioned hole injecting electrode, also possess hole transporting layer, and above-mentioned organic layer is an electron supplying layer, as adhesive linkage, its layer is up and down fitted above-mentioned electron supplying layer.And then, also can further possess the hole injection layer that is clamped between above-mentioned hole injecting electrode and the above-mentioned hole transporting layer.
In addition, it is characterized in that, above-mentioned the 1st electrode is an electron injection electrode, and above-mentioned the 2nd electrode is a hole injecting electrode, and, except above-mentioned emitter, between above-mentioned emitter and above-mentioned organic layer, also possess hole transporting layer, and above-mentioned organic layer is a hole injection layer, as adhesive linkage, its layer is up and down fitted above-mentioned hole injection layer.And then, also can further possess the electron supplying layer that is clamped between above-mentioned electron injection electrode and the above-mentioned emitter.
In addition, it is characterized in that, above-mentioned the 1st electrode is a hole injecting electrode, and above-mentioned the 2nd electrode is an electron injection electrode, and, except above-mentioned emitter, between above-mentioned emitter and above-mentioned organic layer, also possess hole transporting layer, and above-mentioned organic layer is a hole injection layer, as adhesive linkage, its layer is up and down fitted above-mentioned hole injection layer.And then, also can further possess the electron supplying layer that is clamped between above-mentioned electron injection electrode and the above-mentioned emitter.
In addition, be under the situation of hole injecting electrode at above-mentioned the 2nd electrode, it is characterized in that above-mentioned hole injecting electrode is black.And then, it is characterized in that the above-mentioned hole injecting electrode that is black is the electrode that is made of the p N-type semiconductor N.Thus, can prevent the outer reflection of light of incident in light-emitting component.
In addition, when being formed with on the above-mentioned electron injection electrode under the situation of the emitter that comprises above-mentioned metal-oxide semiconductor (MOS) porous body, it is characterized in that between above-mentioned electron injection electrode and the above-mentioned emitter that comprises the metal-oxide semiconductor (MOS) porous body, further possessing metal oxide semiconductor layer.And then, it is characterized in that above-mentioned metal oxide semiconductor layer is made of the n N-type semiconductor N.
In addition, it is characterized in that further possessing the thin-film transistor that is connected with above-mentioned the 2nd electrode.And then above-mentioned thin-film transistor also can be the OTFT that is made of the film that comprises organic material.
Display unit of the present invention is characterized in that, possesses
The two dimension assortment has the light-emitting device array of a plurality of above-mentioned light-emitting components;
The a plurality of x electrodes that extend in parallel to each other along the 1st direction parallel with the face of above-mentioned light-emitting device array;
Along a plurality of y electrodes parallel with the face of above-mentioned light-emitting device array and that extend abreast with the 2nd direction of above-mentioned the 1st direction quadrature;
The above-mentioned thin-film transistor of above-mentioned light-emitting device array is connected with above-mentioned x electrode and above-mentioned y electrode respectively.
In addition, it is characterized in that,, form and divide by the border of a plurality of light-emitting components of two-dimentional assortment by hold the zone of the metal-oxide semiconductor (MOS) porous body of black dyes in the surface load.
In addition, it is characterized in that further possessing the thin-film transistor that is connected with above-mentioned the 2nd electrode, and be clipped in above-mentioned the 2nd substrate that comprises above-mentioned thin-film transistor and the adhesive linkage between above-mentioned the 2nd electrode, and its layer is up and down fitted.
In addition, it is characterized in that further possessing scattered spacer in above-mentioned adhesive linkage, and stipulate the thickness of above-mentioned adhesive linkage by above-mentioned spacer.And then, it is characterized in that above-mentioned spacer is made of the insulating properties material.
The manufacture method of light-emitting component of the present invention is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent electron injection electrode;
On above-mentioned electron injection electrode, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole transporting layer;
Make above-mentioned porous body on above-mentioned the 1st substrate and the above-mentioned hole transporting layer on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
In addition, the manufacture method of light-emitting component of the present invention is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole transporting layer;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of electron injection electrode;
On above-mentioned electron injection electrode, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Make above-mentioned hole transporting layer on above-mentioned the 1st substrate and the above-mentioned porous body on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
In addition, make under the situation of above-mentioned the 1st substrate and above-mentioned the 2nd baseplate-laminating, further possess and make spacer spread all over the operation that above-mentioned hole transporting layer disperses interiorly with above-mentioned hole transporting layer.
In addition, the manufacture method of light-emitting component of the present invention is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent electron injection electrode;
On above-mentioned electron injection electrode, form the operation of electron supplying layer;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole transporting layer;
On above-mentioned hole transporting layer, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Make above-mentioned electron supplying layer on above-mentioned the 1st substrate and the above-mentioned porous body on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
In addition, the manufacture method of light-emitting component of the present invention is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole transporting layer;
On above-mentioned hole transporting layer, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of electron injection electrode;
On above-mentioned electron injection electrode, form the operation of electron supplying layer;
Make above-mentioned porous body on above-mentioned the 1st substrate and the above-mentioned electron supplying layer on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
In addition, make under the situation of above-mentioned the 1st substrate and above-mentioned the 2nd baseplate-laminating, further possess and make spacer spread all over the operation that above-mentioned electron supplying layer ground disperses with above-mentioned electron supplying layer.
In addition, it is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent electron injection electrode;
On above-mentioned electron injection electrode, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Comprising the operation that forms hole transporting layer on the emitter of above-mentioned porous body;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole injection layer;
Make above-mentioned hole transporting layer on above-mentioned the 1st substrate and the above-mentioned hole injection layer on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
In addition, it is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole injection layer;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of electron injection electrode;
On above-mentioned electron injection electrode, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Comprising the operation that forms hole transporting layer on the emitter of above-mentioned porous body;
Make above-mentioned hole injection layer on above-mentioned the 1st substrate and the above-mentioned hole transporting layer on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
In addition, make under the situation of above-mentioned the 1st substrate and above-mentioned the 2nd baseplate-laminating, further possessing the operation that spacer is disperseed with above-mentioned hole injection layer.
In addition, it is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent electron injection electrode;
On above-mentioned electron injection electrode, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Comprising the operation that forms hole transporting layer on the emitter of above-mentioned porous body;
On above-mentioned hole transporting layer, form the operation of hole injecting electrode;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of adhesive linkage;
Make above-mentioned hole injecting electrode on above-mentioned the 1st substrate and the above-mentioned adhesive linkage on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
In addition, under the situation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted, further possess and make spacer spread all over the operation that above-mentioned adhesive linkage disperses interiorly.
As previously discussed, according to the light-emitting component of formation of the present invention,, will carry on a shoulder pole the metal-oxide semiconductor (MOS) porous body of holding the photism organic material on the surface and be arranged on the electron injection electrode as emitter.Therefore, can increase the contact area of photism organic material, increase helps luminous area, can improve the brightness as light-emitting component.In addition,, can reduce the current density of the photism organic material of flowing through, suppress the deterioration of organic material being made as the brightness of light-emitting component under the situation of equal extent.And then, because be will comprise the organic layer of the organic material structure that its laminating up and down closed as adhesive linkage with cementability, so on the light taking-up face of top, can use the transparency carrier that constitutes by glass and ITO electrode etc., the light-emitting component block excellence, that reliability is high to moisture or oxygen can be provided.Because be the organic layer as adhesive linkage is made as plane (ベ ) film, and make spacer be dispersed in structure in the organic layer, therefore can carry out the one film forming by simple and cheap coating process, and under the situation that is made as the glass display device, with respect to each pixel, the aligning of the height when there is no need to fit can also be realized the simplicity of manufacturing process.And then, because by spacer regulation thickness, so can obtain in the lightness plane uniformly good luminous.And then, can use the black electrode as hole injecting electrode, can provide the light of having got rid of circular polarizing disk to take out the high light-emitting component of efficient.As previously discussed, except make high brightness and high reliability the two and deposit, light-emitting component and display unit easy manufacturing, that top light takes out structure can also be provided.
Description of drawings
Fig. 1 is the profile perpendicular to light-emitting area of the light-emitting component in the example 1 of the present invention.
Fig. 2 (a)～(e) is a profile of showing the manufacturing process of the light-emitting component in the example 1 of the present invention.
Fig. 3 is the stereogram of the light-emitting component in the example 2 of the present invention.
Fig. 4 is the plane skeleton diagram of the display unit in the example 3 of the present invention.
Fig. 5 is the profile perpendicular to light-emitting area of the display unit in the example 3 of the present invention.
Fig. 6 is the profile perpendicular to light-emitting area of the light-emitting component in the example 4 of the present invention.
Fig. 7 (a)～(e) is a profile of showing the manufacturing process of the light-emitting component in the example 4 of the present invention.
Fig. 8 is the stereogram of the light-emitting component in the example 5 of the present invention.
Fig. 9 is the profile perpendicular to light-emitting area of the display unit in the example 6 of the present invention.
Figure 10 is the profile perpendicular to light-emitting area of the light-emitting component in the example 7 of the present invention.
Figure 11 (a)～(f) is a profile of showing the manufacturing process of the light-emitting component in the example 7 of the present invention.
Figure 12 is the profile perpendicular to light-emitting area of the display unit in the example 9 of the present invention.
Figure 13 is the profile perpendicular to light-emitting area of the light-emitting component in the example 10 of the present invention.
Figure 14 (a)～(f) is a profile of showing the manufacturing process of the light-emitting component in the example 10 of the present invention.
Figure 15 is the profile perpendicular to light-emitting area of the display unit in the example 12 of the present invention.
Figure 16 is the profile perpendicular to light-emitting area of the light-emitting component in the example 13 of the present invention.
Figure 17 (a)～(f) is a profile of showing the manufacturing process of the light-emitting component in the example 13 of the present invention.
Figure 18 is the profile perpendicular to light-emitting area of the display unit in the example 15 of the present invention.
The profile that is perpendicular to light-emitting area of the light-emitting component in Figure 19 example 16 of the present invention.
Figure 20 (a)～(f) is a profile of showing the manufacturing process of the light-emitting component in the example 16 of the present invention.
Figure 21 is the profile perpendicular to light-emitting area of the display unit in the example 18 of the present invention.
Figure 22 is the profile perpendicular to light-emitting area of the display unit in the example 19 of the present invention.
Figure 23 is the profile perpendicular to light-emitting area of organic EL in the past.
Figure 24 is the profile perpendicular to light-emitting area of the organic EL of top light taking-up structure in the past.
Figure 25 is the profile perpendicular to light-emitting area of the light-emitting component in the example 20 of the present invention.
Figure 26 (a)～(e) is a profile of showing the manufacturing process of the light-emitting component in the example 20 of the present invention.
Figure 27 is the profile perpendicular to light-emitting area of the display unit in the example 22 of the present invention.
Figure 28 is the profile perpendicular to light-emitting area of the light-emitting component in the example 23 of the present invention.
Figure 29 (a)～(e) is a profile of showing the manufacturing process of the light-emitting component in the example 23 of the present invention.
Figure 30 is the profile perpendicular to light-emitting area of the display unit in the example 25 of the present invention.
Figure 31 is the profile perpendicular to light-emitting area of the light-emitting component in the example 26 of the present invention.
Figure 32 (a)～(f) is a profile of showing the manufacturing process of the light-emitting component in the example 26 of the present invention.
Figure 33 is the profile perpendicular to light-emitting area of the display unit in the example 28 of the present invention.
Figure 34 is the profile perpendicular to light-emitting area of the light-emitting component in the example 29 of the present invention.
Figure 35 (a)～(f) is a profile of showing the manufacturing process of the light-emitting component in the example 29 of the present invention.
Figure 36 is the profile perpendicular to light-emitting area of the display unit in the example 31 of the present invention.
Figure 37 is the profile perpendicular to light-emitting area of the light-emitting component in the example 32 of the present invention.
Figure 38 (a)～(f) is a profile of showing the manufacturing process of the light-emitting component in the example 32 of the present invention.
Figure 39 is the profile perpendicular to light-emitting area of the display unit in the example 34 of the present invention.
Figure 40 is the profile perpendicular to light-emitting area of the light-emitting component in the example 35 of the present invention.
Figure 41 (a)～(f) is a profile of showing the manufacturing process of the light-emitting component in the example 35 of the present invention.
Figure 42 is the profile perpendicular to light-emitting area of the display unit in the example 37 of the present invention.
Figure 43 is the profile perpendicular to light-emitting area of the display unit in the example 38 of the present invention.
Concrete example
Below, utilize accompanying drawing to the light-emitting component and the manufacture method thereof of example of the present invention, used the display unit of this light-emitting component and manufacture method thereof to describe.In addition, in the accompanying drawings, identical in fact parts are adopted identical label.
(example 1)
For the light-emitting component of example 1 of the present invention, utilize Fig. 1 to describe.Fig. 1 is the profile vertical with light-emitting area of this light-emitting component.This light-emitting component 10 adopts photism organic material 5 on luminescent material.This light-emitting component 10, possesses transparency carrier 8, with the substrate 1 of the setting of above-mentioned transparency carrier 8 subtends, be clamped between transparency carrier 8 and the substrate 1, be included in the emitter 6 of porous body that the surface load is held the metal-oxide semiconductor (MOS) particulate 4 of photism organic material 5.Say in further detail, this light-emitting component 10, stacked in turn tangible one-tenth the transparent electron injection electrode 7 on the transparency carrier 8, be formed on the substrate 1 hole injecting electrode 2 and between above-mentioned electron injection electrode 7 and hole injecting electrode 2 stacked emitter 6 and hole transporting layer 3.In addition, light as shown by arrows, is gone out from transparency carrier 8 one side-draws.In addition, except above-mentioned structure, also can between hole injecting electrode 2 and hole transporting layer 3, possess hole injection layer or conductive layer etc.In addition, also can between emitter 6 and electron injection electrode 7, possess electron supplying layer or conductive layer.And then hole injecting electrode 2 can be black.Thus, of the surface reflection of the outer light of incident in light-emitting component can be prevented, outer optical contrast ratio can be improved at hole injecting electrode 2.And then, also can between electron injection electrode 7 and transparency carrier 8, possess low-index layer.Thus, the light that can increase to the light-emitting component outside takes out efficient.And then, can and comprise between the porous body emitter 6 of metal-oxide semiconductor (MOS) particulate 4 possessing the thin layer that constitutes by n N-type semiconductor N material at electron injection electrode 7.Thus, just can work as the hole barrier layer, prevent the hole by the gap of the porous body of metal-oxide semiconductor (MOS) particulate 4, do not combine again and just arrive transparent electron injection electrode 7 with electronics, improve the joint efficiency again of hole and electronics.And then, in this light-emitting component 10, as emitter 6, because use the surface load holding the porous body of the metal-oxide semiconductor (MOS) particulate 4 of photism organic material 5, so can obtain the contact area of bigger photism organic material 5.Because electric current flows to the photism organic material via the porous body of metal-oxide semiconductor (MOS) particulate 4, so by the porous body of increase metal-oxide semiconductor (MOS) particulate 4 and the contact area of photism organic material 5, can increase and help luminous area, improve brightness as light-emitting component 10.To be made as the brightness of light-emitting component 10 under the situation of same degree, and can reduce the current density that the photism organic material 5 via emitter 6 flows through, and can suppress the deterioration of photism organic material 5.
Then, each component parts to light-emitting component 10 describes in detail.
At first, transparency carrier 8 is described.Transparency carrier 8 is so long as can support getting final product of porous body that comprises metal-oxide semiconductor (MOS) particulate 4 and the emitter 6 of carrying on a shoulder pole the photism organic material of holding 5 on its surface.In addition, for the luminous element-external that is fetched into that in carrying emitter 6, produces, so long as transparent or semitransparent material gets final product.As transparency carrier 8, can use for example common glass substrate of peaceful 1737 grades of section, perhaps other resin film etc. such as polyester.As more preferred example, basic ion that is comprised in the common glass etc. preferably uses alkali-free glass, silex glass, ceramic substrate, silicon substrate etc., but is not limited thereto the influence of light-emitting component.In addition, also can on glass surface, be coated with aluminium oxide etc. as the ion barrier layer.As resin film, as long as the material of useful life longevity, flexibility, the transparency, electrical insulating property, moisture resistance can use PETG class, the combination that reaches polytrifluorochloroethylene class and nylon 6 and fluorine type resin material etc.In addition, transparent or semitransparent by substrate 1 and hole injecting electrode 2 are made as in light-emitting component 10, thus can take out luminous from the two sides.
Then, electron injection electrode 7 is described.As electron injection electrode 7, can use ITO, InZnO (indium-zinc oxide), SnO 2(tin oxide), ZnO (zinc oxide), polyaniline etc.As more preferred example, preferably use ITO, InZnO, SnO 2, inorganic compound such as ZnO.But be not limited thereto.But, in organic EL shown in Figure 23 200 and organic EL 210 shown in Figure 24, as electron injection electrode, used work function low, with respect to the alloy of the few alkali metal of organic material layer electronics injection barriers such as luminescent layer and alkaline-earth metal, relative higher and stable metals such as Al, Ag with work function.On the other hand, as nesa coating, general ITO work function is up to 4.3～4.7eV, and is higher with respect to organic material layer electronics injection barriers such as luminescent layers, therefore can not carry out high efficiency electronics and inject.In the present invention, by the formation of emitter 6 described later, even the high ITO of work function etc. can realize also that to organic material layers such as emitter high efficiency electronics injects.
The ITO film for making its transparency improve or reduce the purpose of resistivity, can come film forming by film build methods such as sputtering method, electron beam evaporation plating method, ion plating methods.In addition, after film forming,, can apply surface treatments such as plasma treatment for the purpose of characteristics such as controlling resistance rate and work function.The thickness of electron injection electrode 7 is by being regarded as the decision of necessary film resistance value and visible light transmitance.In addition, in organic EL, comparatively speaking because drive current density height thereby wiring resistance become problem, so adopt 100nm or the thickness more than it mostly in order to reduce the film resistance value.
As mentioned above in the present invention, ITO etc. can be used, glass substrate etc. can be used as transparency carrier 8 as electron injection electrode 7.On the other hand, in organic EL shown in Figure 24 210, because make the electrode of the alloy of having used alkali metal or metals such as alkaline-earth metal and Al, Ag have permeability, so the thin layer about use 10nm.Thus, as the purpose of guard electrode, just need the protective layer of transparent resin film etc.But, relatively poor because in the structure of thin metal film and resin molding to the block of moisture and oxygen, so they will soak into to light-emitting component inside.Knownly there is phenomenon as described below in photism organic materials etc., that is, under the situation that has moisture and oxygen, because the loading of electric field and rayed etc., molecule ruptures in conjunction with meeting, causes luminescent properties to reduce.In the present invention,, use glass substrate etc., can improve block, realize high reliability, long-life light-emitting component moisture and oxygen as transparency carrier 8 by using ITO as electron injection electrode 7.
In addition, between transparency carrier 8 and electron injection electrode 7, preferably possesses low-index layer.Thus, the light that just can increase to element-external takes out efficient.As low-index layer, utilization is aerosil for example.Light takes out the relation of efficiency eta e and refractive index n, is generally represented by following formula (1).
η e＝1/2n 2····(1)
In general glass substrate, refractive index is about 1.6, and refractive index is 1.03 in aerosil, and therefore under the situation that aerosil is imported as low-index layer, light takes out efficient and can improve more than 2 times.
Then, emitter 6 is described.Emitter 6 comprises carries on a shoulder pole the metal-oxide semiconductor (MOS) porous body of holding photism organic material 5 from the teeth outwards.In addition, the metal-oxide semiconductor (MOS) porous body also can be dispersed in the matrix that is made of organic material.
At first, as the metal-oxide semiconductor (MOS) porous body, adopt the n N-type semiconductor N material that the electronics injection is good, do not possess absorption in the visible light zone.Mainly can use the oxide of Mg, Sr, Ba, Y, Ti, Zr, Hf, V, Nb, Ta, Mo, W, Mn, Ru, Zn, In, La, Ce etc.As more preferred example, can adopt by TiO 2(titanium oxide), ZnO (zinc oxide), Nb 2O 5(niobium oxide), SnO 2(tin oxide), In 2O 3(indium oxide), WO 3(tungsten oxide), ZrO 2(zirconia), Ta 2O 5(tantalum oxide), La 2O 3The oxide or the SrTiO of (lanthana) etc. 3, BaTiO 3, CaTiO 3, MgTiO 3, KNbO 3, SrPbO 3, (Ba, Sr) PbO 3, (Sr, La) PbO 3, Sr (Ti, Nb) O 3Deng the monocrystal of the oxide with perovskite structure etc., polycrystal, with and the resulting porous body of particle powder etc.In addition, also can be composite oxides based on above-mentioned metal oxide, MgIn is for example arranged 2O 4, CdSnO 3, CdIn 2O 4, ZnIn 2O 4, InGaZnO 4, In 4Sn 3O 12Deng.And then, also can be with 2 kinds or above-mentioned metal oxide more than it with the complex that ratio arbitrarily mixes, for example can use Nb 2O 5/ SrTiO 3, Nb 2O 5/ Ta 2O 5, Nb 2O 5/ ZrO 2, Nb 2O 5/ TiO 2, CeO 2/ SnO 2, ZnO/SnO 2Deng combination.And then dissimilar metal oxide that above-mentioned metal oxide is contained become the alms giver for the purpose that improves conductivity and fluorine, hydrogen etc. for example can use doped with Al, In, Ga, Si in ZnO, at TiO 2Middle doping Ta is at BaTiO 3Middle doping La, Ta are at In 2O 3Middle Sn, Ti are at SnO 2Middle doping Sb, P, F are at SrTiO 3Middle doping Nb, Ta, La are at MgIn 2O 4Middle doping H etc., but be not limited thereto.
The surface of metal-oxide semiconductor (MOS) porous body is laminated with the porous body structure that diameter is the metal-oxide semiconductor (MOS) particulate 4 about 5nm～200nm in order to increase the amount of the photism organic material 5 that load in its surface holds, to become.By forming this porous body structure, the surface area of the metal-oxide semiconductor (MOS) of each electrode unit are increases, and the amount of the photism organic material of holding 5 of carrying on a shoulder pole increases.
Manufacture method to this metal-oxide semiconductor (MOS) porous body layer describes.
(1) powder of metal-oxide semiconductor (MOS) particulate 4 utilizes metal halide or metal alkoxide or they is added the metal oxide sol that water resolves into, and obtains by sol-gel process.
(2) powder with metal-oxide semiconductor (MOS) particulate 4 utilizes coating dispenser, homogenizer, ultrasonic stirring device, mortar etc. to be dispersed in the solvent.In this case, for example, add polyethylene glycol etc., make uniform thickener.As the use amount of the powder of metal-oxide semiconductor (MOS) particulate 4, more preferably 5～60 quality %.
(3) thickener of this metal-oxide semiconductor (MOS) particulate 4 is coated on the electron injection electrode 7 on transparent basic 8, makes its drying.The rubbing method of the thickener of metal-oxide semiconductor (MOS) particulate 4 can use known rubbing methods such as ink-jet method, infusion method, spin-coating method, scraper rubbing method, scraper rubbing method, airblade coating method, reverse roll rubbing method, gravure roll rubbing method, extrusion coated method, the curtain rubbing method that falls, spraying process, chip rubbing method.
By above operation, can form the metal-oxide semiconductor (MOS) porous body layer that possesses mechanical strength and last stability (through the still stable performance of certain hour), but be not limited thereto.In addition, metal-oxide semiconductor (MOS) particulate 4 and comprise that the atomic thickener of metal-oxide semiconductor (MOS) also can be to sell on the market.In addition, after the thickener that has been coated with metal-oxide semiconductor (MOS) particulate 4, though according to the baseplate material difference, if under the temperature in 400 ℃～500 ℃ temperature range, baked 5～60 minutes, further enhance mechanical strength then, so more preferred.And then the metal-oxide semiconductor (MOS) porous body after baking, also can carry out plasma treatment, corona treatment, UV processing, acid or alkali treatment etc., perhaps other reprocessing.
As the photism organic material 5 that load on the surface of metal-oxide semiconductor (MOS) porous body is held,, can enumerate low branch subclass luminescent material and macromolecular luminescent material from distinguishing substantially.As the low subclass luminescent material that divides, use the condensed ring and the derivative thereof of naphthalene, anthracene, pyrene, aphthacene etc., the derivative of the heteroaromatic compounds of the inferior pyranose propane of cumarin and 4H-dintrile, thiophene evil hexazinone etc.As other low minute subclass luminescent material, can use polymethine compounds, stilbene compound, chelating metal complex, chelating lanthanum group complex, xanthene compounds and their derivative, but be not limited thereto.In addition, as the macromolecular luminescent material, the material that can use pi-conjugated polymer or σ conjugated polymer, pigment polymerization materialization is formed, polymer-metal complex etc.Poly-phenylene vinylene (ppv) support derivative (PPV derivative), polythiofuran derivative (PAT derivative), polyparaphenylene's derivative (PPP derivative), polyoxyethylene alkylphenyl support (PDAF), polyacetylene derivative (PA derivative), polysilane derivative (PS derivative), poly-N-vinyl carbazole (PVK) etc. are for example arranged, but be not limited thereto.And then, also can be the dendritic that has the medium oligomer of molecular weight or have the branch structure.And then, the doping pigment that in above-mentioned macromolecular material, also can add the low molecular material of carrier transport and be used to change glow color.
At this, be held on the surface of metal-oxide semiconductor (MOS) porous body making above-mentioned photism organic material 5 loads, the method that forms emitter 6 describes.In addition, manufacture method described later is an example, is not limited to these methods.As the method that photism organic material 5 is held to the surface of above-mentioned porous body load, can use the method for its chemisorbed.As the method for chemisorbed, for example, at first, carboxyl (COOH) can be imported photism organic material 5, makes the hydroxyl (OH) ester bond and fixing on the surface of itself and metal-oxide semiconductor (MOS) porous body.Esterification can be immersed in this solution or the dispersion liquid metal-oxide semiconductor (MOS) porous body and carry out by making 5 dissolvings of photism organic material or being dispersed in the solvent.In addition, by using ink-jet method, infusion method, spin-coating method and other known coating process also can similarly realize.By above processing, just can form and be included in the emitter 6 that the surface load has been held the metal-oxide semiconductor (MOS) porous body of photism organic material 5.In addition, replace carboxyl, can use thiocarboxyl group (CSOH), carbodithioic acid (CSSH), sulfo group (SO 3H), sulfino (SO 2H), inferior sulfo group (SOH), phosphono (PO (OH) 2), phosphino-(PH 2O 2), sulfydryl (SH), trimethoxy silicyl (Si (OCH 3)), silicochloroform base (SiCl 3), amide groups (CONH 2), amino (NH 2).And then, also can be coordinate bond with the metallic element of metal-oxide semiconductor (MOS) porous body.In addition, also can after make 5 absorption from the teeth outwards of photism organic material, carry out acid or base and handle.
More than to electron injection electrode 7 with comprise load and hold the emitter 6 of the metal-oxide semiconductor (MOS) porous body of photism organic material 5 and be described in detail.At this, describe even also can carry out this point that high efficiency electronics injects to organic material layers such as emitter to the high ITO of work function etc.Photism organic material 5 though be that monomer is the material with electron transport, has the bigger molecular structure of range of the pi-electron cloud of responsible electron transport.As previously mentioned, because photism organic material 5 carries out chemisorbed with respect to the surface of metal-oxide semiconductor (MOS) porous body, so range of the pi-electron cloud of photism organic material 5, affact on the surface of metal-oxide semiconductor (MOS) porous body, therefore can not be injected into the potential barrier obstruction and cause that electronics injects.And then, metal-oxide semiconductor (MOS) is used the n N-type semiconductor N, inject thereby can carry out high efficiency electronics by electron injection electrode 7.
And then the chemisorbed on the surface of photism organic material 5 and metal-oxide semiconductor (MOS) porous body is preventing because also effective aspect the deterioration of the light-emitting component that causes organic material and peeling off of electrode interface.
In addition, also can and comprise and possess between the emitter 6 of the porous body that obtains by metal-oxide semiconductor (MOS) particulate 4 because the thin layer that n N-type semiconductor N material constitutes at electron injection electrode 7.Thus, just can as prevent the hole by the gap of metal-oxide semiconductor (MOS) porous body, do not combine the hole barrier layer that the situation that just arrives electron injection electrode takes place again and work with electronics, improve the joint efficiency again of hole and electronics.For at this employed metal-oxide semiconductor (MOS), use and same composite oxides of metal-oxide semiconductor (MOS) particulate 4 or mixture etc.
Secondly, hole transporting layer 3 is described.For hole transporting layer 3, preferably comprise macromolecular material as described below, described macromolecular material is to bring into play materials with function as the contact layer that contacts with the above-mentioned substrate 1 that comprises emitter 6 and hole injecting electrode 2.As this hole transporting layer 3, so long as electric conductive polymer gets final product, and then the preferred so long as macromolecular material of the cavity conveying that the Hall mobility is high gets final product.For the macromolecular material of cavity conveying, pi-conjugated polymer or σ conjugated polymer and then low branchs subclass and go into to have the polymer etc. of the molecular configuration that shows cavity conveying in the strand group are for example organized the polymer of going into to have allylamine compounds etc.As these object lesson, can be set forth in the PMAm (PTPAMMA, PTPDMA) that has aromatic amine on the side chain, the polyethers (TPDPES, TPDPEK) that on main chain, has aromatic amine etc., but be not limited thereto, as more preferred example wherein, poly-N-vinyl carbazole (PVK) demonstrates up to 10 -6Cm 2The high Hall mobility of/Vs.And then, as other preferred example, polypropylene dihydroxy thiophene (PEDOT), polystyrolsulfon acid (PSS), polymethyl-benzene base silane (PMPS) etc. are arranged.
In addition, make the cavity conveying material of low branch subclass equally also passable in the mode that molecular forms is dispersed in conductivity or the non-conductive polymer.As the low hole transporting material that divides subclass, can enumerate TPD, N, N '-two (Alpha-Naphthyl)-N, N '-diphenylbenzidine (NPD) etc., employed diamine derivative such as Tang, the diamine derivative of disclosed Q1-G-Q2 structure etc. in No. the 2037475th, the Japan Patent particularly, but be not limited thereto.In addition, Q1 and Q2 are the bases that has nitrogen-atoms and at least 3 carbochains (their at least 1 is aromatic) individually.G is the concatenating group that encircles alkylene base, arylalkenyl, alkylene base or be made of carbon-carbon bond.Disperse the object lesson of class as molecule, have TPD high concentration ground molecule is dispersed in example in the Merlon, its Hall mobility is 10 -4Cm 2/ Vs～10 -5Cm 2About/Vs.
And then be preferably, be preferably in be included in the hole transporting layer 3 its near interface can by light or heat carry out crosslinked or polymerization bridging property or polymeric materials.Thus, when hole injecting electrode 2 on substrate 1 and the emitter on the transparency carrier 86 are fitted,, just can improve bonding force by applying light or heat.
As the film build method of hole transporting layer 3, can use ink-jet method, infusion method, spin-coating method and other known coating process.
Then, hole injecting electrode 2 is described.As hole injecting electrode 2, applicable work function is big and stable, visible light regional reflex rate certain substantially, constitute by metals such as Al, Ag, Cr, Mo, W, Ta, Nb, Ni, Pt, but be not limited thereto.In addition, hole injecting electrode 2 more preferably presents black.As this black electrode, more preferably have the hole injection and have the p N-type semiconductor N material of absorption in the visible light zone.This black electrode with the outer light of surface reflection incident in display unit of hole injecting electrode 2, plays the effect that the outer optical contrast ratio that prevents display unit worsens.When realizing display unit, on the light taking-up face of general light-emitting component circular polarizing disk is set.This is in order to eliminate the above-mentioned reverberation in the electrode surface on the substrate 1 by phase difference, to prevent the deterioration of outer optical contrast ratio.But circular polarizing disk has intrinsic transmitance, has the luminous drawback that itself decays that makes self-emission device.Now the transmitance of general employed circular polarizing disk is about 50%, and therefore taking out efficient from the light of light-emitting component just becomes approximately 1/2, becomes the obstacle of high brightnessization.Black electrode of the present invention, absorbance is big, absorbs the outer light that incident comes in display unit.By this effect, the good display unit of optical contrast ratio outside circular polarizing disk also can be realized.
As the object lesson of black electrode, can use CuO and Cu 2The mixture of O etc.Generally non-fixed than metal oxide in, the oxide of oxygen excess type or metal deficiency becomes the p N-type semiconductor N, this be because, in crystallization with respect to the metal ion of the deficiency that becomes vacancy (emptying aperture), the cause of balanced hole coexistence.Above-mentioned CuO and Cu 2Under the situation of the mixture of O, Cu 2O is the non-surely than oxide of metal deficiency.Because in crystallization, there is the vacancy of Cu, so demonstrate with the character of hole as the p N-type semiconductor N of charge carrier.One side's CuO is an atrament, and their mixture has both character.In addition, as other example, can use NiO (p N-type semiconductor N) and Ni 2O 3The mixture of (atrament), Fe 2O 3(p N-type semiconductor N) and FeO or Fe 3O 4The mixture of (atrament) etc.As the formation method of these electrodes, the wet method of dry method such as sputtering method or plated film are arranged, making that thickener applies then etc.And then above-mentioned black electrode also can use carbon materialses such as carbon black.
Secondly, utilize Fig. 2 that the manufacture method of this light-emitting component 10 is described.This light-emitting component 10 is made by following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent electron injection electrode 7 (Fig. 2 (a)).
(c) then, on above-mentioned electron injection electrode 7, formation comprises the emitter 6 (Fig. 2 (d)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding above-mentioned photism organic material 5 from the teeth outwards.Moreover, the formation method of emitter 6 such as above-mentioned.Prepared substrate A thus.
(d) on the other hand, prepared substrate 1.
(e) then, on aforesaid substrate 1, form hole injecting electrode 2 (Fig. 2 (c)).
(f) then, on above-mentioned hole injecting electrode 2, form hole transporting layer 3 (Fig. 2 (b)).Prepared substrate B thus.
(f) then, make the emitter 6 of the hole transporting layer 3 of substrate B and substrate A fit together relative to one another (Fig. 2 (e)).
By above operation, can form light-emitting component 10, but be not limited thereto.As the light-emitting component that top light taking-up is in the past constructed, under the situation of the stacked above one another mode that substrate 1 one sides from the configuration thin-film transistor begin, must be after forming hole transporting layer 3 and emitter 6 stacked electron injection electrode 7, otherwise the electron injection electrode 7 of formation high-quality with just must making photism organic material 5 deteriorations.On the contrary, even the mode of the stacked above one another that begins from transparency carrier 8, can not make hole transporting layer 3 deteriorations ground form thin-film transistor.Relative therewith, according to the manufacture method of light-emitting component of the present invention, by on substrate A, forming emitter 6 in advance, and fit with the substrate B that has formed hole injecting electrode 2, can more easily form light-emitting component 10.
In addition, above-mentioned operation is preferably under the dry environment and carries out, and then preferably carries out under low-oxygen environment.Thus, can seek characteristics such as operation voltage is low, high efficiency, long service life improves.
Secondly, the luminous mechanism to the light-emitting component 10 of such making describes.At first, from electron injection electrode 7 injected electrons, in emitter 6, move to its surface, and then move to the photism organic material 5 that carries out chemisorbed by ester bond by the metal-oxide semiconductor (MOS) porous body.On the other hand,, in hole transporting layer 3, move, reach photism organic material 5, combine again with above-mentioned electronics and show luminous at this from hole injecting electrode 2 injected holes.
(example 2)
Utilize Fig. 3 that the light-emitting component of example 2 of the present invention is described.Fig. 3 is the stereogram that the electrode of this light-emitting component 20 of expression constitutes.This light-emitting component 20 further possesses the thin-film transistor 21 that is connected with hole injecting electrode 2.On thin-film transistor, connecting x electrode 22 and y electrode 23.In this light-emitting component 20 because light goes out from transparency carrier 8 one side-draws, so can not depend on the thin-film transistor 21 on substrate 1 configuration obtain bigger aperture opening ratio.In addition, by using thin-film transistor 21, can make light-emitting component 20 have memory function.As this thin-film transistor 21, can use low temperature polycrystalline silicon or amorphous silicon film transistor etc.And then, also can be the OTFT that constitutes by the film that comprises organic material.
(example 3)
Utilize Fig. 4 that the display unit of example 3 of the present invention is described.Fig. 4 is the general view of the active matrix that is made of mutually orthogonal x electrode 22 and y electrode 23 of this display unit 30 of expression.This display unit 30 is the active matrix type displays with thin-film transistor.This active matrix type display 30 possesses: assortment has the light-emitting device array of the light-emitting component of a plurality of examples 2 shown in Figure 3 two-dimensionally; The a plurality of x electrodes 22 that on 1st direction parallel, extend in parallel to each other with the face of this light-emitting device array; At the upwardly extending a plurality of y electrodes 23 of the 2nd parallel with the face of this light-emitting device array and vertical side with the 1st direction.The thin-film transistor 21 of this light-emitting device array is connected with y electrode 23 with x electrode 22 respectively.By a pair of x electrode 22 and y electrode 23 specific light-emitting component constitute a pixel.According to this active matrix display devices 30, as previously mentioned, constitute the emitter 6 of the display element of each pixel, be included in the metal-oxide semiconductor (MOS) porous body that the surface load is held photism organic material 5.Thus, can obtain the surface area that bigger load is held photism organic material 5, can reduce current density, so can obtain long-life display unit by the photism organic material.
Secondly, utilize Fig. 5 that the manufacture method of the display unit of this example 3 is described.Fig. 5 is the profile another routine display unit 40, vertical and vertical with light-emitting area with y electrode 23 that further has different a plurality of pixel 41R, 41G, 41B.On substrate 1, form in turn after thin-film transistor 21 and x electrode 22, the y electrode 23, with the light-emitting component 10 of example 1 similarly, form hole injecting electrode 2, then, for example utilizing, the ink-jet method coating forms hole transporting layer 3.For a side transparency carrier 8, also with the light-emitting component 10 of example 1 similarly, form transparent electron injection electrode 7, emitter 6, and fit with substrate 1.By above operation, just can form display unit 30, but be not limited to these methods.Under the situation of colour display device, when forming emitter 6, utilize for example ink-jet method, will comprise the coating fluid of each photism organic material of RGB, with pel spacing adaptably, be coated on each pixel 41R, 41G, the 41B to the branch color.Before this operation, also can form the pixel separation zone 42 of dividing each pixel, and then more preferably this pixel separation zone 42 is black.For example, by comprising the coating fluid of insulating properties macromolecular material and black dyes, utilize ink-jet method to be coated with, thereby just can form pixel separation zone 42.Thus, when each photism organic material of coating RGB, can prevent to enter to pixel adjacent.And then, by being black, can obtain the effect same with above-mentioned black electrode.
(example 4)
With Fig. 6 the light-emitting component in the example 4 of the present invention is described.Fig. 6 is the profile perpendicular to light-emitting area of this light-emitting component.This light-emitting component 50, compare with the light-emitting component 10 in the example 1, difference is: transparent hole injecting electrode 2 is set on transparency carrier 8, electron injection electrode 7 is set on substrate 1, and become reversed polarity with respect to the light removing direction shown in the arrow.In addition, in this light-emitting component 50, difference is: being formed on the emitter 6 on the substrate 1 and being formed on hole injecting electrode 2 on the transparency carrier 8, fit together with the hole transporting layer 3 with cementability.Moreover, identical with light-emitting component in the example 1 in fact for other component parts, therefore omit explanation.And then, except above-mentioned formation, can also between transparent hole injecting electrode 2 and hole transporting layer 3, possess hole injection layer or conductive layer etc.In addition, can also between emitter 6 and electron injection electrode 7, possess electron supplying layer or conductive layer.Again and then, can also between transparent hole injecting electrode 2 and transparency carrier 8, possess low-index layer.Thus, the light that can increase to the light-emitting component outside takes out efficient.Again and then, can also between emitter 6 and electron injection electrode 7, possess the thin layer that constitutes by n N-type semiconductor N material.Thus, can be used as and prevent after the hole is by the gap of the porous body of metal-oxide semiconductor (MOS) particulate 4 that not the hole barrier layer that combines the situation that just arrives electron injection electrode 7 with electronics again works, and can improve the joint efficiency again of hole and electronics.
Secondly, each component parts to light-emitting component 50 at length describes.Moreover, in fact with identical parts of light-emitting component 10 in the example 1, omit explanation.
At first, hole injecting electrode 2 is described.As hole injecting electrode 2, compare with the light-emitting component 10 in the example 1, be different on the transparent or semitransparent this point.As hole injecting electrode 2, adopt the higher metal of work function, particularly the particle of the transparency electrode that is fit to as a comparison can adopt ITO or SnO 2As other example, can enumerate metals such as Ni, Au, Pt, Pd, Cr, Mo, W, Ta, Nb, perhaps their alloy.And then, can also adopt electroconductive resins such as polyaniline, but also be not limited thereto.ITO perhaps reduces resistivity in order to improve its transparency, can use film build method film forming such as sputtering method, electron beam evaporation plating method, ion plating method.In addition, after film forming,, also can implement surface treatments such as plasma treatment for controlling resistance rate and work function.Though the thickness of hole injecting electrode 2 is by required film resistance value and the decision of visible light transmitance, in light-emitting component 50, because drive current density is higher, wiring resistance is a problem, therefore in order to reduce the film resistance value, uses 100nm or its above thickness more.Moreover, transparent or semitransparent by substrate 1 and electron injection electrode 2 are made in this light-emitting component 50, can take out luminous from the two sides.
As previously discussed, in example 4 of the present invention,, ITO etc. can be used,, glass substrate etc. can be used as transparency carrier 8 as transparent hole injecting electrode 2.Thus, with light-emitting component 10 in the example 1 similarly, can realize high reliability, long-life light-emitting component.
Secondly, electron injection electrode 7 is described.As electron injection electrode 7, compare with the light-emitting component 10 in the example 1, be different on the nontransparent this point.As electron injection electrode 7, can adopt work function is lower and the electronics injection barrier the is less alkali metal or the alloy of alkaline soil metalloid and metals such as bigger, the stable Al of work function, Ag.By the electron injection electrode 7 that this alloy constitutes, stable and electronics injects and is easier to.Particularly suitable as a comparison example can adopt MgAg, AlLi etc., but be not limited thereto.In addition,, can adopt the metallic film that forms low work function in the organic layer side as other formation of electron injection electrode 7, and constituting and forming LiF or Al as the stacked metal film that constitutes by stable metal of guard electrode thereon 2O 3Film after form the various electrodes such as stacked formation of Al than heavy back.
In addition, as the film build method of electron injection electrode 6, can be with vacuum vapour deposition or well-known film build method such as sputtering method, silk screen print method.
Secondly, emitter 6 is described.As emitter 6, compare with the light-emitting component 10 in the example 1, be formed on nontransparent electron injection electrode 7 on this point different.In addition,, compare, be formed on the electron injection electrode 7 on the substrate 1 different on this point in coating with the light-emitting component 10 in the example 1 for the manufacture method of the emitter 6 that comprises the metal-oxide semiconductor (MOS) porous body.Moreover, the component parts that adopts for them, since identical with light-emitting component 10 in the example 1 in fact, explanation therefore omitted.
Secondly, hole transporting layer 3 is described.As hole transporting layer 3, compare with the light-emitting component 10 in the example 1, be formed on the transparent hole injecting electrode 2 on this point different.In addition, preferably contain the macromolecular material that the adhesive linkage as transparent hole injecting electrode 2 and emitter 6 works.Moreover, the component parts that adopts for them, since identical with light-emitting component 10 in the example 1 in fact, explanation therefore omitted.
Secondly, with Fig. 7 the manufacture method of this light-emitting component 50 is described.This light-emitting component 50 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent hole injecting electrode 2 (Fig. 7 (a)).
(c) then, on above-mentioned hole injecting electrode 2, form hole transporting layer 3 (Fig. 7 (b)).Prepared substrate C thus.
(d) on the other hand, prepared substrate 1.
(e) then, on aforesaid substrate 1, form electron injection electrode 7 (Fig. 7 (c)).
(f) then, on above-mentioned electron injection electrode 7, formation comprises above-mentioned emitter 6 (Fig. 7 (d)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding photism organic material 5 from the teeth outwards.Moreover, the formation method of emitter 6 such as above-mentioned.Prepared substrate D thus.
(g) then, make the emitter 6 of the hole transporting layer 3 of substrate C and substrate D fit together relative to one another (Fig. 7 (e)).
With above operation, can form light-emitting component 50, but be not limited thereto.
Moreover above-mentioned operation is preferably under the dry environment and carries out, and then is more preferably under low-oxygen environment and carries out.Thus, the characteristics such as reduction, high efficiency, long lifetime that can obtain operating voltage are improved.
(example 5)
With Fig. 8 the light-emitting component in the example 5 of the present invention is described.Fig. 8 is a stereogram of showing the electrode formation of this light-emitting component 60.This light-emitting component 60, compare with the light-emitting component 20 in the example 2, though different on thin-film transistor 21 this point on the electron injection electrode 7 that also possesses the light-emitting component 50 that is connected in the example 4, come down to identical formation, therefore omit explanation.
(example 6)
With Fig. 4 the display unit in the example 6 of the present invention is described.Fig. 4 is the general view of the active matrix of showing that orthogonal x electrode 22 and y electrode 23 by the display unit in the example 3 30 constitute, and this display unit is the active matrix type display with thin-film transistor.Display unit in this example 6, compare with the display unit 30 in the example 3, though different on possessing with the light-emitting device array this point of the light-emitting component 60 two-dimentional assortments in a plurality of examples 5, come down to identical formation, therefore omit explanation.
Secondly, the manufacture method of the display unit in this example 6 is described with Fig. 9.Fig. 9 be have display unit 70 in the example 6 of other examples of different a plurality of pixel 41R, 41G, 41B perpendicular to y electrode 23 and perpendicular to the profile of light-emitting area.On substrate 1, form thin-film transistor 21 and x electrode 22, y electrode 23 in turn, afterwards, with light-emitting component 50 in the example 4 similarly, form electron injection electrode 7, then, form emitter 6.Transparency carrier 8 for a side, also with example 4 in light-emitting component 50 similarly, form transparent hole injecting electrode 2, then, for example form hole transporting layer 3 with the ink-jet method coating, afterwards, make hole transporting layer 3 and emitter 6 toward each other, substrate 1 and transparency carrier 8 are fit together.With above operation, can form display unit 70, but be not limited thereto.Under the situation of the display unit of colour, when forming emitter 6, for example use ink-jet method, will contain the coating fluid of each photism organic material of RGB, cooperate pel spacing, the color separation coating is formed on each pixel 41R, 41G, the 41B.Before this operation, also can form the pixel separation zone 42 of dividing each pixel, can adopt the device same with example 3.
In addition, in this display unit 70, emitter 6 is owing to be formed on the substrate 1, therefore need have only substrate 1 side according to what pel spacing aligned, transparency carrier 8 sides, and transparent hole injecting electrode 2 and hole transporting layer 3 can be used as the flat film manufacturing.Thus, can relax the requirement of the positioning accuracy when fitting together, and operation can be oversimplified.
(example 7)
With Figure 10 the light-emitting component in the example 7 of the present invention is described.Figure 10 is the profile perpendicular to light-emitting area of this light-emitting component.This light-emitting component 80, compare with the light-emitting component 10 in the example 1, difference is: also possess electron supplying layer 81 between emitter 6 and transparent electron injection electrode 7, emitter 6 and the electron injection electrode 7 that is formed on the transparency carrier 8 with being formed on the substrate 1 fit together with the electron supplying layer 81 with cementability.In addition, at this moment, hole transporting layer 3 does not need to have cementability.Moreover, identical with light-emitting component 10 in the example 1 in fact for other formation, therefore omit explanation.And then, except above-mentioned formation, can also between hole injecting electrode 2 and hole transporting layer 3, possess hole injection layer or conductive layer etc.Again and then, can also between electron injection electrode 7 and transparency carrier 8, possess low-index layer.Thus, the light that can increase to the light-emitting component outside takes out efficient.Again and then, hole injecting electrode 2 also can be the black electrode.Thus, can improve outer optical contrast ratio.
Secondly, each component parts to light-emitting component 80 at length describes.Moreover, in fact with identical parts of light-emitting component 10 in the example 1, omit explanation.
At first, electron supplying layer 81 is described.As electron supplying layer 81, preferably contain the macromolecular material that the adhesive linkage as emitter 6 and electron injection electrode 7 works.As this electron supplying layer 81, so long as electric conductive polymer gets final product, be more preferably, so long as the macromolecular material of the higher electron transport of electron mobility gets final product.As the macromolecular material that possesses electron transport, particularly suitable as a comparison example can be enumerated poly--[2-(6-cyano group-6-methyl oxygen in heptan base)-1,4-penylene] (CN-PPV) and polyquinoxaline etc., but be not limited thereto.In addition, even low molecule and in strand group gone into to show that the polymer of molecular configuration of electron transport is equally also passable.And then molecule is dispersed with low molecule electron-like and carries the form of property material equally also passable in conductivity or non-conductive polymer.As the low molecular material that possesses electron transport, can Lie Ju oxadiazole derivative, triazole derivative, styrene phenyl derivatives, シ ロ one Le derivative, 1,10-phenanthroline derivative, hydroxyquinoline metal complex compound etc., and their dimer, tripolymer.As more preferred example, can enumerate 2-(4-biphenyl)-5-(4-tert-butylbenzene base)-1,3,4-oxadiazole (PBD), 3-(4-biphenyl)-4-phenyl-5-(4-tert-butylbenzene base)-1,2,4-triazole (TAZ), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), Alq3 etc., but be not limited thereto.
And then be preferably, be preferably in and be included in bridging property or the polymeric materials that its near interface utilizes light or heat to carry out crosslinked or polymerization on the electron supplying layer 81.Thus, when the electron injection electrode on emitter on the substrate 16 and the transparency carrier 87 is fitted,, just can improve bonding force by applying light or heat.
In addition, as the film build method of electron supplying layer 81, can use ink-jet method, infusion method, spin-coating method, other well-known coating process.
Secondly, with Figure 11 the manufacture method of this light-emitting component 80 is described.This light-emitting component 80 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent electron injection electrode 7 (Figure 11 (a)).
(c) then, on above-mentioned electron injection electrode 7, form electron supplying layer 8 (Figure 11 (b)).Prepared substrate E thus.
(d) on the other hand, prepared substrate 1.
(e) then, on aforesaid substrate 1, form hole injecting electrode 2 (Figure 11 (c)).
(f) then, on above-mentioned hole injecting electrode 2, form hole transporting layer 3 (Figure 11 (d)).
(g) then, on above-mentioned hole transporting layer 3, formation comprises above-mentioned emitter 6 (Figure 11 (e)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding photism organic material 5 from the teeth outwards.Moreover, the formation method of emitter 6 such as above-mentioned.Prepared substrate F thus.
(h) then, make the emitter 6 of the electron supplying layer 81 of substrate E and substrate F fit together relative to one another (Figure 11 (f)).
With above operation, can form light-emitting component 80, but be not limited thereto.
Moreover above-mentioned operation is preferably under the dry environment and carries out, and then is more preferably under low-oxygen environment and carries out.Thus, the characteristics such as reduction, high efficiency, long lifetime that can obtain operating voltage are improved.
(example 8)
With Fig. 3 the light-emitting component in the example 8 of the present invention is described.Fig. 3, though be the stereogram of showing the electrode formation of the light-emitting component 20 in the example 2, but the light-emitting component in the example 8, compare with the light-emitting component 20 in the example 2, on thin-film transistor 21 this point on the hole injecting electrode 2 that also possesses the light-emitting component 80 that is connected in the example 7, the difference, come down to identical formation.Thereby, omit detailed explanation.
(example 9)
With Fig. 4 the display unit in the example 9 of the present invention is described.Fig. 4 is the general view of the active matrix of showing that orthogonal x electrode 22 and y electrode 23 by the display unit in the example 3 30 constitute, and this display unit is the active matrix type display with thin-film transistor.Display unit in this example 9, compare with the display unit 30 in the example 3, though different on the light-emitting device array this point that possesses the assortment of the two dimension of the light-emitting component in a plurality of examples 8, come down to identical formation, therefore omit explanation.
Secondly, the manufacture method of the display unit in this example 9 is described with Figure 12.Figure 12, be have display unit 90 in the example 9 of other examples of different a plurality of pixel 41R, 41G, 41B perpendicular to y electrode 23, and perpendicular to the profile of light-emitting area.On substrate 1, form thin-film transistor 21 and x electrode 22, y electrode 23 in turn, afterwards, with light-emitting component 80 in the example 7 similarly, form hole injecting electrode 2, then, form hole transporting layer 3, then, form emitter 6.For a side transparency carrier 8, also with example 7 in light-emitting component 80 similarly, form transparent electron injection electrode 7, then, for example form electron supplying layer 81 with the ink-jet method coating, afterwards, itself and substrate 1 are fit together.With above operation, can form display unit 90, but be not limited thereto.Under the situation of the display unit of colour, when forming emitter 6, for example use ink-jet method, will contain the coating fluid of each photism organic material of RGB, cooperate pel spacing, the color separation coating is formed on each pixel 41R, 41G, the 41B.Before this operation, also can form the pixel separation zone 42 of dividing each pixel, can adopt the device same with example 3.
In addition, in this display unit 90, with example 6 similarly, need have only substrate 1 side according to what pel spacing aligned, transparency carrier 8 sides, transparent electron injection electrode 7 and electron supplying layer 81 can be used as the flat film manufacturing.Thus, can relax the requirement of the positioning accuracy when fitting together, and operation can be oversimplified.
(example 10)
With Figure 13 the light-emitting component in the example 10 of the present invention is described.Figure 13 is the profile perpendicular to light-emitting area of this light-emitting component.This light-emitting component 100, compare with the light-emitting component 50 in the example 4, difference is: also possess electron supplying layer 81 between emitter 6 and electron injection electrode 7, with the electron injection electrode 7 that is formed on the substrate 1, with the emitter 6 that is formed on the transparency carrier 8, fit together with electron supplying layer 81 with cementability.In addition, at this moment, hole transporting layer 3 does not need to have cementability.Moreover, for other component parts, since identical with light-emitting component 50 in the example 4 in fact, explanation therefore omitted.And then, except above-mentioned formation, can also between hole injecting electrode 2 and hole transporting layer 3, possess hole injection layer or conductive layer etc.Again and then, can also between hole injecting electrode 2 and transparency carrier 8, possess low-index layer.Thus, the light that can increase to the light-emitting component outside takes out efficient.
Secondly, each component parts to light-emitting component 100 describes.Moreover, in fact with identical parts of light-emitting component 50 in the example 4, omit explanation.In addition, constitute the parts of the electron supplying layer 81 of this light-emitting component 100, since identical with light-emitting component 80 in the example 7 in fact, explanation therefore omitted.
Secondly, with Figure 14 the manufacture method of this light-emitting component 100 is described.This light-emitting component 100 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent hole injecting electrode 2 (Figure 14 (a)).
(c) then, on above-mentioned hole injecting electrode 2, form hole transporting layer 3 (Figure 14 (b)).
(d) and then, on above-mentioned hole transporting layer 3, form and to comprise that above-mentioned load from the teeth outwards holds the emitter 6 (Figure 14 (c)) of the metal-oxide semiconductor (MOS) porous body 4 of photism organic material 5.Moreover, the formation method of emitter 6 such as above-mentioned.Prepared substrate G thus.
(e) on the other hand, prepared substrate 1.
(f) then, on aforesaid substrate 1, form electron injection electrode 7 (Figure 14 (d)).
(g) then, on above-mentioned electron injection electrode 7, form electron supplying layer 81 (Figure 14 (e)).Prepared substrate H thus.
(h) make the electron supplying layer 81 of the emitter 6 of substrate G and substrate H fit together relative to one another (Figure 14 (f)).
With above operation, can form light-emitting component 100, but be not limited thereto.
Moreover above-mentioned operation is preferably under the dry environment and carries out, and then is more preferably under low-oxygen environment and carries out.Thus, the characteristics such as reduction, high efficiency, long lifetime that can obtain operating voltage are improved.
(example 11)
With Fig. 7 the light-emitting component in the example 11 of the present invention is described.Fig. 7, though be the stereogram of showing the electrode formation of the light-emitting component 60 in the example 5, but the light-emitting component in the example 11, compare with the light-emitting component 60 in the example 5, on thin-film transistor 21 this point on the electron injection electrode 7 that also possesses the light-emitting component 100 that is connected in the example 10, the difference, come down to identical formation.Thereby, omit detailed explanation.
(example 12)
With Fig. 4 the display unit in the example 12 of the present invention is described.Fig. 4 is the general view of the active matrix of showing that orthogonal x electrode 22 and y electrode 23 by the display unit in the example 3 30 constitute, and this display unit is the active matrix type display with thin-film transistor.Display unit in this example 12, compare with the display unit 30 in the example 3, though different on the light-emitting device array this point that possesses the assortment of the two dimension of the light-emitting component in a plurality of examples 11, come down to identical formation, therefore omit explanation.
Secondly, the manufacture method of the display unit in this example 12 is described with Figure 15.Figure 15, be have display unit 110 in the example 12 of other examples of different a plurality of pixel 41R, 41G, 41B perpendicular to y electrode 23 and perpendicular to the profile of light-emitting area.On substrate 1, form thin-film transistor 21 and x electrode 22, y electrode 23 in turn, afterwards, with light-emitting component 100 in the example 10 similarly, form electron injection electrode 7, then, for example form electron supplying layer 81 with the ink-jet method coating.For a side transparency carrier 8, also with example 10 in light-emitting component 100 similarly, form transparent hole injecting electrode 2, then, form hole transporting layer 3, then, after forming emitter 6, itself and substrate 1 are fit together.With above operation, can form display unit 110, but be not limited thereto.Under the situation of the display unit of colour, when forming emitter 6, for example use ink-jet method, will contain the coating fluid of each photism organic material of RGB, cooperate pel spacing, the color separation coating is formed on each pixel 41R, 41G, the 41B.Before this operation, also can form the pixel separation zone 42 of dividing each pixel, can adopt the device same with example 3.
(example 13)
With Figure 16 the light-emitting component in the example 13 of the present invention is described.Figure 16 is the profile perpendicular to light-emitting area of this light-emitting component.This light-emitting component 120, compare with the light-emitting component 10 in the example 1, difference is: also possess hole injection layer 121 between hole injecting electrode 2 and hole transporting layer 3, hole injecting electrode 2 and the hole transporting layer 3 that is formed on the transparency carrier 8 with being formed on the substrate 1 fit together with the hole injection layer 121 with cementability.In addition, at this moment, hole transporting layer 3 does not need to have cementability.Moreover, for other component parts, since identical with light-emitting component 10 in the example 1 in fact, explanation therefore omitted.And then, except above-mentioned formation, can also between electron injection electrode 7 and emitter 6, possess electron supplying layer or conductive layer etc.Again and then, can also between electron injection electrode 7 and transparency carrier 8, possess low-index layer.Thus, the light that can increase to the light-emitting component outside takes out efficient.And then, can also and comprise between the emitter 6 of porous body of metal-oxide semiconductor (MOS) particulate 4 possessing the thin layer that constitutes by n N-type semiconductor N material at electron injection electrode 7.Thus, can be used as and prevent after the hole is by the gap of the porous body of metal-oxide semiconductor (MOS) particulate 4 that not the hole barrier layer that combines the situation that just arrives electron injection electrode 7 with electronics again works, and can improve the joint efficiency again of hole and electronics.Again and then, hole injecting electrode 2 also can be the black electrode.Thus, can improve outer optical contrast ratio.
Secondly, each component parts to light-emitting component 120 is described in detail.Moreover, in fact with identical parts of light-emitting component 10 in the example 1, omit explanation.
At first, hole injection layer 121 is described.As hole injection layer 121, preferably contain the macromolecular material that the adhesive linkage as the hole transporting layer 3 on hole injecting electrode on the substrate 12 and the transparency carrier 8 works.Be more preferably, so long as at the highest occupied molecular orbital(HOMO) (HOMO) of hole injection layer 121, and do not have potential barrier between the work function of hole injecting electrode 2, and the macromolecular material that carries out easily injecting in the hole gets final product.Particularly suitable as a comparison example can adopt polyaniline derivative etc., but be not limited thereto.In addition, the doping electronics is led and the composite bed that improved conductivity also has same effect in macromolecular material, for example, can be set forth in the material of mixed in the polypropylene dihydroxy thiophene (PEDOT) polystyrolsulfon acid (PSS), but be not limited thereto.Again and then, the form of hole injection layer material molecule dispersion in conductivity or non-conductive polymer of low branchs subclass equally also is fine.As the low hole injection layer material that divides subclass, can adopt ionization potential energy high-molecular-weight propylene amine less, that be called as CuPc (CuPc) star amine (ス one バ one ス ト ア ミ Application), but be not limited thereto.
Be more preferably, be preferably in the hole injection layer 121, being included in its near interface can be by light or hot bridging property or the polymeric materials that carries out crosslinked or polymerization.Thus, when the applying of the hole transporting layer 3 on hole injecting electrode on the substrate 12 and the transparency carrier 8,, can improve bonding force by applying light or heat.
In addition, as the film build method of hole injection layer 121, can use ink-jet method, infusion method, spin-coating method, other well-known coating process.
Secondly, with Figure 17 the manufacture method of this light-emitting component 120 is described.This light-emitting component 120 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent electron injection electrode 7 (Figure 17 (a)).
(c) then, on above-mentioned electron injection electrode 7, formation comprises above-mentioned emitter 6 (Figure 17 (b)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding photism organic material 5 from the teeth outwards.Moreover, the formation method of emitter 6 such as above-mentioned.
(d) then, on above-mentioned emitter 6, form hole transporting layer 3 (Figure 17 (c)).Prepared substrate I thus.
(e) on the other hand, prepared substrate 1.
(f) then, on aforesaid substrate 1, form hole injecting electrode 2 (Figure 17 (d)).
(g) then, on above-mentioned hole injecting electrode 2, form hole injection layer 121 (Figure 17 (e)).Prepared substrate J thus.
(h) then, make the hole injection layer 121 of the hole transporting layer 3 of substrate I and substrate J fit together relative to one another (Figure 17 (f)).
With above operation, can form light-emitting component 120, but be not limited thereto.
Moreover above-mentioned operation is preferably under the dry environment and carries out, and then is more preferably under low-oxygen environment and carries out.Thus, the characteristics such as reduction, high efficiency, long lifetime that can obtain operating voltage are improved.
(example 14)
With Fig. 3 the light-emitting component in the example 14 of the present invention is described.Fig. 3, though be the stereogram of showing the electrode formation of the light-emitting component 20 in the example 2, but the light-emitting component in the example 14, compare with the light-emitting component 20 in the example 2, on thin-film transistor 21 this point on the hole injecting electrode 2 that also possesses the light-emitting component 120 that is connected in the example 13, the difference, come down to identical formation.Thereby, omit detailed explanation.
(example 15)
With Fig. 4 the display unit in the example 15 of the present invention is described.Fig. 4 is the general view of the active matrix of showing that orthogonal x electrode 22 and y electrode 23 by the display unit in the example 3 30 constitute, and this display unit is the active matrix type display with thin-film transistor.Display unit in this example 15, compare with the display unit 30 in the example 3, though different on the light-emitting device array this point that possesses the assortment of the two dimension of the light-emitting component in a plurality of examples 14, come down to identical formation, therefore omit explanation.
Secondly, the manufacture method of the display unit in this example 15 is described with Figure 18.Figure 18 be have display unit 130 in the example 15 of other examples of different a plurality of pixel 41R, 41G, 41B perpendicular to y electrode 23, and perpendicular to the profile of light-emitting area.On substrate 1, form thin-film transistor 21 and x electrode 22, y electrode 23 in turn, afterwards, with light-emitting component 120 in the example 13 similarly, form hole injecting electrode 2, then, for example form hole injection layer 121 with the ink-jet method coating.For a side transparency carrier 8, also with example 13 in light-emitting component 120 similarly, form transparent electron injection electrode 7, then, form emitter 6, then, after forming hole transporting layer 3, itself and substrate 1 are fit together.With above operation, can form display unit 130, but be not limited thereto.Under the situation of the display unit of colour, when forming emitter 6, for example use ink-jet method, will contain the coating fluid of each photism organic material of RGB, cooperate pel spacing, the color separation coating is formed on each pixel 41R, 41G, the 41B.Before this operation, also can form the pixel separation zone 42 of dividing each pixel, can adopt the device same with example 3.
(example 16)
With Figure 19 the light-emitting component in the example 16 of the present invention is described.Figure 19 is the profile perpendicular to light-emitting area of this light-emitting component.This light-emitting component 140, compare with the light-emitting component 50 in the example 4, difference is: also possess hole injection layer 121 between hole injecting electrode 2 and hole transporting layer 3, with the hole transporting layer 3 that is formed on the substrate 1, with the hole injecting electrode 2 that is formed on the transparency carrier 8, fit together with hole injection layer 121 with cementability.In addition, at this moment, hole transporting layer 3 does not need to have cementability.Moreover, for other component parts, since identical with light-emitting component 50 in the example 4 in fact, explanation therefore omitted.And then, except above-mentioned formation, can also between emitter 6 and electron injection electrode 7, possess electron supplying layer or conductive layer etc.Again and then, can also between hole injecting electrode 2 and transparency carrier 8, possess low-index layer.Thus, the light that can increase to the light-emitting component outside takes out efficient.Again and then, can also and comprise between the emitter 6 of porous body of metal-oxide semiconductor (MOS) particulate 4 possessing the thin layer that constitutes by n N-type semiconductor N material at electron injection electrode 7.Thus, can be used as and prevent after the hole is by the gap of the porous body of metal-oxide semiconductor (MOS) particulate 4 that not the hole barrier layer that combines the situation that just arrives electron injection electrode 7 with electronics again works, and can improve the joint efficiency again of hole and electronics.And then hole injecting electrode 2 also can be the black electrode.Thus, can improve outer optical contrast ratio.
Secondly, each component parts to light-emitting component 140 is described in detail.Moreover, in fact with identical parts of light-emitting component 50 in the example 4, omit explanation.In addition, constitute the parts of the hole injection layer 121 of this light-emitting component 140, since identical with light-emitting component 120 in the example 13 in fact, explanation therefore omitted.
Secondly, with Figure 20 the manufacture method of this light-emitting component 140 is described.This light-emitting component 140 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent hole injecting electrode 2 (Figure 20 (a)).
(c) then, on above-mentioned hole injecting electrode 2, form hole injection layer 121 (Figure 20 (b)).Prepared substrate K thus.
(d) on the other hand, prepared substrate 1.
(e) then, on aforesaid substrate 1, form electron injection electrode 7 (Figure 20 (c)).
(f) then, on above-mentioned electron injection electrode 7, formation comprises above-mentioned emitter 6 (Figure 20 (d)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding photism organic material 5 from the teeth outwards.Moreover, the formation method of emitter 6 such as above-mentioned.
(g) then, on above-mentioned emitter 6, form hole transporting layer 3 (Figure 20 (e)).Prepared substrate L thus.
(h) then, make the hole transporting layer 3 of the hole injection layer 121 of substrate K and substrate L fit together relative to one another (Figure 20 (f)).
With above operation, can form light-emitting component 140, but be not limited thereto.
Moreover above-mentioned operation is preferably under the dry environment and carries out, and then is more preferably under low-oxygen environment and carries out.Thus, the characteristics such as reduction, high efficiency, long lifetime that can obtain operating voltage are improved.
(example 17)
With Fig. 8 the light-emitting component in the example 17 of the present invention is described.Fig. 8, though be the stereogram of showing the electrode formation of the light-emitting component 60 in the example 5, but the light-emitting component in the example 17, compare with the light-emitting component 60 in the example 5, on thin-film transistor 21 this point on the electron injection electrode 7 that also possesses the light-emitting component 140 that is connected in the example 16, the difference, come down to identical formation.Thereby, omit detailed explanation.
(example 18)
With Fig. 4 the display unit in the example 18 of the present invention is described.Fig. 4 is the general view of the active matrix of showing that orthogonal x electrode 22 and y electrode 23 by the display unit in the example 3 30 constitute, and this display unit is the active matrix type display with thin-film transistor.Display unit in this example 18, compare with the display unit 30 in the example 3, though different on the light-emitting device array this point that possesses the assortment of the two dimension of the light-emitting component in a plurality of examples 17, come down to identical formation, therefore omit explanation.
Secondly, the manufacture method of the display unit in this example 18 is described with Figure 21.Figure 21, be have display unit 130 in the example 18 of other examples of different a plurality of pixel 41R, 41G, 41B perpendicular to y electrode 23, and perpendicular to the profile of light-emitting area.On substrate 1, form thin-film transistor 21 and x electrode 22, y electrode 23 in turn, afterwards, with light-emitting component 140 in the example 16 similarly, form electron injection electrode 7, then, form emitter 6, then, form hole transporting layer 3.For a side transparency carrier 8, also with example 16 in light-emitting component 140 similarly, form transparent hole injecting electrode 2, then, for example form hole injection layer 121 with the ink-jet method coating, afterwards, itself and substrate 1 are fit together.With above operation, can form display unit 150, but be not limited thereto.Under the situation of the display unit of colour, when forming emitter 6, for example use ink-jet method, will contain the coating fluid of each photism organic material of RGB, cooperate pel spacing, the color separation coating is formed on each pixel 41R, 41G, the 41B.Before this operation, also can form the pixel separation zone 42 of dividing each pixel, can adopt the device same with example 3.
In addition, in this display unit 150, with example 6 similarly, need have only substrate 1 side according to what pel spacing aligned, transparency carrier 8 sides, transparent hole injecting electrode 2 and hole injection layer 121 can be used as the flat film manufacturing.Thus, can relax the requirement of the positioning accuracy when fitting together, and operation can be oversimplified.
(example 19)
With Figure 22 the display unit in the example 19 of the present invention is described.Figure 22, be have display unit 160 in the example 19 of different a plurality of pixel 41R, 41G, 41B perpendicular to y electrode 23, and perpendicular to the profile of light-emitting area.This display unit 160 is the active matrix type displays with thin-film transistor.This display unit 160 is compared with the display unit 30 in the example 3, and as adhesive linkage 161, it is different on this point that substrate 1 side and transparency carrier 8 sides are fit together in the part that hole injecting electrode 2 is linked to each other with thin-film transistor.In addition, adhesive linkage 161, possess as the conductive region 162 of the connecting portion of hole injecting electrode 2 and thin-film transistor 21 and in addition non-conductive regional 163.Thus, can simultaneously use from the manufacture method of the organic EL in the past of transparency carrier 8 side stacked above one another electron injection electrodes 7, emitter 6, hole transporting layer 3, hole injecting electrode 2, one side provides top light to take out the display unit of structure at an easy rate.In addition, at this moment, hole transporting layer 3 does not need to have cementability.For other component parts, since identical with light-emitting component 10 in the example 1 in fact, explanation therefore omitted.Moreover, the layer of above-mentioned display unit constitutes, be 2 layers of formation of emitter/hole transporting layer, but also can be to have only emitter, or hole transporting layer/emitter/electron supplying layer, hole injection layer/hole transporting layer/emitter/electron supplying layer etc., with 1 layer or the stacked formation of organic layer more than it.In addition, electron injection electrode also can be the formation of the reversed polarity that links together with thin-film transistor.
Secondly, each component parts to display unit 160 describes.Moreover, in fact with identical parts of light-emitting component 10 in the example 1, omit explanation.
Conductive region 162 in the adhesive linkage 161 can adopt well-known conductive pastes such as Ag thickener or carbon paste.In addition, as film build method, can be with well-known coating processes such as silk screen printing or ink-jet methods.On the other hand, for non-conductive regional 163, preferably contain the macromolecular material that the adhesive linkage as hole injecting electrode 2 on substrate 1 and the transparency carrier 8 or hole transporting layer 3 works.For example, can adopt well-known macromolecular materials such as polyethylene, polyvinyl alcohol, polyimides.In addition, for film build method, can be with well-known coating processes such as silk screen printing or ink-jet methods.Be more preferably, in non-conductive regional 163, comprise the bridging property or the polymeric materials that can utilize light or heat to carry out crosslinked or polymerization.Thus, when the applying of hole injecting electrode 2 on substrate 1 and the transparency carrier 8 or hole transporting layer 3,, can improve bonding force by applying light or heat.
Secondly, at length describe according to specific embodiment.
(embodiment 1)
With Fig. 1 the light-emitting component of embodiments of the invention 1 is described.In this light-emitting component and since have with example 1 in the identical formation of light-emitting component, therefore omit explanation to this formation.In this light-emitting component, as the transparency carrier 8 that forms electron injection electrode 7, that adopts market sale has an ITO film glass substrate.In addition, on the metal-oxide semiconductor (MOS) porous body, adopt TiO2 film porous body.Be held in the lip-deep photism organic material 5 of above-mentioned porous body as load, use 3-(2-[4-morpholinodithio base)-7-diethylin coumarin-4-carboxylic acid (BDCC).On substrate 1, use glass substrate, on hole injecting electrode 2, use Al, on hole transporting layer 3, use PVK.
Secondly, with Fig. 2 the manufacture method of this light-emitting component is described.This light-emitting component is with following operation manufacturing.
(a), prepare the glass substrate that has the ITO film (Fig. 2 (a)) of market sale as the transparency carrier 8 that forms electron injection electrode 7.It is carried out ultrasonic waves for cleaning with basic lotion, water, acetone, isopropyl alcohol (IPA), then from the IPA solution of boiling, mention the back drying.At last, carrying out UV/O3 cleans.
(b) on the above-mentioned glass substrate that has an ITO film as the metal-oxide semiconductor (MOS) porous body layer, form TiO 2The film porous body layer.
Below, to this TiO 2The manufacture method of film porous body layer describes.
(1) at first, at room temperature isopropyl titanate is splashed in the aqueous solution of nitric acid, make it add water decomposition then, be heated to 80 ℃, stir again about 8 hours, thereby obtain sol solution.
(2) secondly, by under 250 ℃, making its slaking 12 hours, make the TiO that contains about particle diameter 10nm～20nm with pressure cooker 2Atomic colloidal solution.
(3) after this colloidal solution is concentrated with rotary evaporator, add about 30% polyethylene glycol, make final TiO then 2Thickener.
(4) secondly, the TiO2 thickener is coated on the substrate 1 with scraping the method for the use of ink and water, at room temperature, with this TiO 2Film is at air drying after 10 minutes, with 450 ℃ of slakings 30 minutes.
(5) and then, with this TiO 2Film is immersed in TiCl 4After placing an evening in the aqueous solution, carry out water and clean, and use 450 ℃ of slakings 30 minutes once more.
By above operation,, form TiO as the metal-oxide semiconductor (MOS) porous body 2The film porous body.
(c) TiO on the ITO film that is formed on the above-mentioned ITO of having film glass substrate 2On the surface of film porous body, make its adsorboluminescence organic material 5 with following step.At first, with the ultrasonic stirring device BDCC is disperseed in ethanol.This dispersion liquid of one side continuous stirring, one side will form TiO 2The above-mentioned ITO of the having film glass substrate of film porous body soaks an evening therein.Thus, make the BDCC load of photism organic material be held in TiO 2On the surface of film porous body layer, thereby form emitter 6 (Fig. 2 (b)).With it as substrate A.
(d) on the other hand, as substrate 1, use glass substrate.After itself and the above-mentioned ITO of having film glass substrate are similarly cleaned,, prepare with the parts (Fig. 2 (c)) of vacuum vapour deposition with Al film forming on substrate 1 as hole injecting electrode 2.
(e) PVK is dissolved in chloroform, and be coated on the above-mentioned hole injecting electrode, as hole transporting layer 6 (Fig. 2 (d)) with spin-coating method.With it as substrate B.
(f) secondly, after just being coated with hole transporting layer 3, the hole transporting layer 3 of substrate B is overlapped substrate A emitter 6 above, leave standstill at normal temperatures then, substrate A and substrate B are fit together, thereby make light-emitting component (Fig. 2 (e)).
When additional direct voltage is estimated on the light-emitting component of making by this way, show 500cd/m with the 8V luminosity 2, luminous efficiency shows 3.5cd/A, and has shown the characteristics of luminescence identical with the light-emitting component of comparative example shown below.In addition, when the surface area of the metal-oxide semiconductor (MOS) porous body of in this embodiment 1, making with the inspection of BET specific area measuring method, the about 800 times area with plane electrode.When the initial stage luminosity is made as 300cd/m 2And when this light-emitting component implemented life test, brightness life-span that reduces by half was 13000 hours.This compares elongated with comparative example 1.
(embodiment 2)
With Fig. 5 the display unit in the embodiments of the invention 2 is described.This display unit 40 similarly has thin-film transistor 21 with display unit in the example 3, but different on the pixel 41R with this 3 look of RGB, 41G, 41B this point.In each pixel 41R, 41G, 41B, change in the mode of corresponding photism organic material respectively.In addition, in this display unit 40, be provided with the pixel separation zone 42 of separating between each pixel.In this pixel separation zone 42, the black dyes load is held on the surface of metal-oxide semiconductor (MOS) particle 4, thereby with each pixel separation.
Manufacture method to this display unit 40 describes.Therefore this display unit 40 is devices that assortment two-dimensionally has the light-emitting component in the example 1, can similarly carry out with the manufacture method of light-emitting component in the example 1 in fact.In the manufacture method of this display unit 40, on each pixel, use different photism organic materials.In addition, and each pixel between 42 corresponding positions, pixel separation zone, the black dyes load is held on the surface of metal-oxide semiconductor (MOS) particle 4.At this moment, form emitter 6, hole transporting layer 3 as adhesive linkage, is fit together the hole injecting electrode 2 of a side of substrate 1 and the emitter 6 of transparency carrier 8 sides then in a side of transparency carrier 8.Therefore, must carry on a shoulder pole and held the emitter 6 of photism organic material 5 and aligning of hole injecting electrode 2 separately.At this moment, in the configuration of pixel separation zone 42 and each pixel 41,,, also can not influence the part of adjacent pixels even if depart from a little the position of pixel 41 by set pixel separation zone 42 in advance slightly widely.
(embodiment 3)
With Fig. 1 the light-emitting component in the embodiments of the invention 3 is described.In this light-emitting component, compare with the light-emitting component among the embodiment 1, as hole injecting electrode, use CuO and Cu 2The mixture of O replaces on the Al this point different.Thus, hole injecting electrode is black.This hole injecting electrode, with the hole injecting electrode of embodiment 1 similarly, form with sputtering method.
The evaluation of contrast is with respect to the light-emitting area of the element white light from the angular illumination 100lx of 45 degree, is 300cd/m at luminosity 2Condition under, ratio during with the opening/closing light-emitting component and non-luminosity carries out.Contrast in the present embodiment 3 is 300: 1 or more than it.This is better than comparative example described later 1.
(embodiment 4)
With Fig. 6 the light-emitting component in the embodiments of the invention 4 is described.In this light-emitting component and since have with example 4 in the identical formation of light-emitting component, therefore omit explanation to its formation.In this light-emitting component, compare with the light-emitting component among the embodiment 1, as having formed the transparency carrier 8 of transparent hole injecting electrode 2, that uses market sale has an ITO film glass substrate, and uses on the MgAg this point different as electron injection electrode 7.Electron injection electrode 7 usefulness vacuum vapour depositions form.Moreover, in fact with identical parts, the manufacture method of light-emitting component among the embodiment 1, omit explanation.When the light-emitting component of making is estimated similarly to Example 1, obtained 550cd/m 2Brightness luminous.In addition, brightness life-span that reduces by half is 13000 hours.
(embodiment 5)
With Figure 10 the light-emitting component in the embodiments of the invention 5 is described.In this light-emitting component and since have with example 7 in the identical formation of light-emitting component, therefore omit explanation to its formation.In this light-emitting component, compare with the light-emitting component among the embodiment 1, using CN-PPV as the electron supplying layer 81 that is between emitter 6 and the electron injection electrode 7, and using on the InZnO this point different as electron injection electrode 7.Electron supplying layer 81 spin-coating method film forming, and electron injection electrode 7 is used sputtering film-forming.Moreover, in fact with identical parts, the manufacture method of light-emitting component among the embodiment 1, omit explanation.When the light-emitting component of making is estimated similarly to Example 1, obtained 520cd/m 2Brightness luminous.In addition, brightness life-span that reduces by half is 12000 hours.
(embodiment 6)
With Figure 13 the light-emitting component in the embodiments of the invention 6 is described.In this light-emitting component and since have with example 10 in the identical formation of light-emitting component, therefore omit explanation to its formation.In this light-emitting component, compare with the light-emitting component among the embodiment 4, using on the CN-PPV this point different as the electron supplying layer 81 that is between emitter 6 and the electron injection electrode 7.Electron supplying layer 81 spin-coating method film forming.Moreover, in fact with identical parts, the manufacture method of light-emitting component among the embodiment 4, omit explanation.When the light-emitting component of making is estimated similarly to Example 1, obtained 510cd/m 2Brightness luminous.In addition, brightness life-span that reduces by half is 12000 hours.
(embodiment 7)
With Figure 16 the light-emitting component in the embodiments of the invention 7 is described.In this light-emitting component and since have with example 13 in the identical formation of light-emitting component, therefore omit explanation to its formation.In this light-emitting component, compare with the light-emitting component among the embodiment 1, using on the PEDOT/PSS this point different as the hole injection layer 121 that is between hole injecting electrode 2 and the hole transporting layer 3.Hole injection layer 121 spin-coating method film forming.Moreover, in fact with identical parts, the manufacture method of light-emitting component among the embodiment 1, omit explanation.When the light-emitting component of making is estimated similarly to Example 1, obtained 560cd/m 2Brightness luminous.In addition, brightness life-span that reduces by half is 11000 hours.
(embodiment 8)
With Figure 19 the light-emitting component in the embodiments of the invention 8 is described.In this light-emitting component and since have with example 16 in the identical formation of light-emitting component, therefore omit explanation to its formation.In this light-emitting component, compare with the light-emitting component among the embodiment 4, using on the PEDOT/PSS this point different as the hole injection layer 121 that is between hole injecting electrode 2 and the hole transporting layer 3.Hole injection layer 121 spin-coating method film forming.Moreover, in fact with identical parts, the manufacture method of light-emitting component among the embodiment 1, omit explanation.When the light-emitting component of making is estimated similarly to Example 1, obtained 540cd/m 2Brightness luminous.In addition, brightness life-span that reduces by half is 12000 hours.
Moreover, in the above description, except the emitter 6 that comprises the metal-oxide semiconductor (MOS) porous body, showed that also the layer that comprises organic material is 1 or 2 layer a configuration example, but comprised that the layer of organic material also can be made of most layers.
(comparative example 1)
The transparency carrier 8 that has ITO film glass substrate and embodiment 1 of market sale is cleaned equally, afterwards, utilize vacuum evaporation, with behind TPD, 3-(2-[4-morpholinodithio base)-7-diethylin cumarin (coumarin 6) evaporation in turn with hole transporting layer, emitter film forming, and then form electron injection electrode behind the evaporation MgAg.Moreover, after having formed electron injection electrode, under low humidity low oxygen concentration environment, with obtaining light-emitting component after glass plate and the epoxy adhesive encapsulation.
When additional direct voltage is estimated on the light-emitting component of making by this way, show 350cd/m with the 7V luminosity 2, luminous efficiency shows 2.0cd/A.When under the identical condition of in the early stage brightness and embodiment 1 this light-emitting component being implemented life test, brightness life-span that reduces by half is 8000 hours.And then, when estimating contrast similarly to Example 3, be 170: 1.
(example 20)
With Figure 25 the light-emitting component in the example 20 of the present invention is described.Figure 25 is the profile perpendicular to light-emitting area of this light-emitting component 300.This light-emitting component 300 is compared with the light-emitting component 10 among the embodiment 1, and is different on scattered spacer 301 this point in ground in further possessing the hole transporting layer of spreading all over 3.By this spacer 301, can suppress the inequality of the thickness of above-mentioned hole transporting layer 3, and can roughly be controlled at homogeneous thickness.Thus, can improve the inner evenness of brightness.Moreover, identical with light-emitting component 10 in the example 1 in fact for other formation, omit explanation.Moreover, except above-mentioned formation, can also between emitter 6 and electron injection electrode 7, possess electron supplying layer with and/or conductive layer etc.And then, can also between hole injecting electrode 2 and hole transporting layer 3, possess hole injection layer with and/or conductive layer etc.Again and then, can also be between hole transporting layer 3 and other organic layer or electrode, possess the abrasive protective layer that is used to prevent with spacer 301.
Secondly, each component parts to this light-emitting component 10 describes.Moreover, in fact with the identical component parts of light-emitting component 10 in the example 1, omit explanation.
At first, spacer 301 is described.As spacer 301, can use last employed bead spacers such as display panels in the past.In addition, preferably constitute by the transparency and the good material of insulating properties, and the material that has good uniformity of particle diameter.As the bead spacer, generally have silicon dioxide system with resinous, but from being difficult for low temperature foam, defective this point when preventing film forming, being more preferably with hole transporting layer material coefficient of thermal expansion rate does not have the too resin system spacer of big-difference.At this moment as spacer 301 employed materials, be the cross-linked copolymer of main component preferably, but also be not limited thereto with divinylbenzene, styrene, acrylate copolymer etc.In addition, the shape perpendicular to the section of electrode surface of spacer 301 can be a shape arbitrarily such as circular, oval, trapezoidal, triangle, but the uniformity of thickness preferably circle be only.Again and then, in order to improve the close property with electrode surface, also can be to have implemented the surface-treated material.With regard to surface treatment, thermoplastic resins such as useful polyolefin or polyacrylic acid cover the methods such as surface of spacer 301.
Stipulate the thickness of hole transporting layer 3 by the particle diameter of spacer 301.The particle diameter of this spacer 301 is preferably in the scope of 0.01 μ m～10 μ m, is more preferably in the scope of 0.1 μ m～5 μ m.If the thickness of hole transporting layer 3 is below 0.01 μ m, just the surface roughness of hole injecting electrode 2 becomes problem.In order to reduce surface roughness, to have to append new manufacturing process, manufacturing cost just increases.On the other hand, if the thickness of hole transporting layer 3 surpasses 10 μ m, then driving voltage rises.The number in the hole of in hole transporting layer, moving, with hole mobility, auxiliary voltage square ,-3 powers of hole transporting layer thickness are proportional.Under the situation of the cavity conveying layer material of stating in the use,,, then can not flow through the electric current of fully guaranteeing brightness if the thickness of hole transporting layer surpasses 10 μ m with the voltage about the 10V of the driving that can realize thin-film transistor.
In addition, as the film build method of the hole transporting layer 3 that comprises spacer 301, can use the method identical with the film build method of above-mentioned hole transporting layer 3.When film forming, as pre-treatment with the hole transporting layer material dissolves in organic solvent, and make of well-known methods such as ultrasonic wave dispersions and make spacer be dispersed in dispersion liquid in this solution.Under the situation of resin system spacer, must carry out the selected of in organic solvent undissolved material or organic solvent.On the other hand, under the situation of silicon dioxide system spacer, with regard to the more this point of the options of organic solvent, better.Moreover, for the purpose of aid dispersion, also can add interfacial agent or it is divided into diffusing.
Like this, the hole transporting layer 3 that works as adhesive linkage when fitting can not carry out during except film forming the restriction of tight thickness, the mechanical strength after considering to fit etc., preferably thick film.On the other hand, for reproducibility provides luminous grade stable light-emitting component well, the homogenizing of the thickness of organic layer is essential, particularly compares with other organic layer, and the uniform film thicknessization of hole transporting layer 4 of thick film is extremely important with needing.As described above, by in the layer of hole transporting layer 3, importing spacer 301, can easily limit the thickness of hole transporting layer 3.
Secondly, with Figure 26 the manufacture method of this light-emitting component 300 is described.This light-emitting component 300 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent electron injection electrode 7 (Figure 26 (a)).
(c) then, on above-mentioned electron injection electrode 7, formation comprises the emitter 6 (Figure 26 (b)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding above-mentioned photism organic material 5 from the teeth outwards.Moreover, the formation method of emitter 6 such as above-mentioned.Prepared substrate M thus.
(d) on the other hand, prepared substrate 1.
(e) then, on aforesaid substrate 1, form hole injecting electrode 2 (Figure 26 (c)).
(f) then, in organic solvent, and spacer 301 ultrasonic waves are disperseed the hole transporting layer material dissolves.
(g) then, on above-mentioned hole injecting electrode 2, will disperse the solution coat film forming of the cavity conveying layer material of above-mentioned spacer 301, formed hole transporting layer 3 (Figure 26 (d)) then.Prepared substrate N thus.
(h) then, make the hole transporting layer 3 of the emitter 6 of substrate M and substrate N fit together relative to one another (Figure 26 (e)).
Can make light-emitting component 300 with above operation, but also be not limited thereto.
(example 21)
With Fig. 3 the light-emitting component in the example 21 of the present invention is described.Light-emitting component in the example 21 is compared with the light-emitting component 20 in the example 2 shown in Figure 3, and is different on light-emitting component 10 this point that replace in the examples 1 with the light-emitting component in the example 20 300.Moreover, identical with light-emitting component 20 in the example 2 in fact for other formation, omit explanation.
(example 22)
With Fig. 4 the display unit in the example 22 of the present invention is described.Display unit in the example 22 is compared with the display unit 30 in the example 3 shown in Figure 4, and is different on light-emitting component 20 this point that replace with the light-emitting component in the example 21 in the example 2.According to the display unit of this example 22, by the hole transporting layer 3 that is built-in with spacer 301 it is fit together as described above.Thus, the uniform film thicknessization of hole transporting layer 3, thus can obtain the display unit that uniform, the top light of luminosity takes out structure.Moreover, identical with display unit 30 in the example 3 in fact for other formation, omit explanation.
Secondly, with Figure 27 the manufacture method of the display unit in this example 22 is described.Figure 27, be in the example 22 of other examples of a plurality of pixel 41R, 41G with RGB3 look, 41B display unit 310 perpendicular to light-emitting area, and perpendicular to the profile of y electrode 23.By on each pixel 41R, 41G, 41B, the photism organic material in the emitter 65 and its illuminant colour are disposed accordingly, just become the full-color display unit of 3 primary colors.Its manufacture method is as follows, promptly at first forms thin-film transistor 21 and x electrode 22, y electrode 23 in turn on substrate 1, afterwards, with the light-emitting component 300 of example 21 similarly, form hole injecting electrode 2, then, form the hole transporting layer 3 that is built-in with spacer 301.For a side transparency carrier 8, also with the light-emitting component 300 of example 21 similarly, form transparent electron injection electrode 7, then, form emitter 6.At this moment, on substrate 1, thin-film transistor 21, x electrode 22, y electrode 23, hole injecting electrode 2 are formed according to each back, pixel 41 location, on a side transparency carrier 8, emitter 6 is formed according to each back, pixel 41 location.Be built-in with spacer 301 hole transporting layers 3, owing to can be flat film, therefore can be with silk screen printing or ink-jet method, other well-known painting process one film forming.Then, one side is located hole transporting layer 3 and emitter 6 relative to one another, and one side fits together substrate 1 and transparency carrier 8.By above operation, can form this display unit 310, but also be not limited thereto.
(example 23)
With Figure 28 the light-emitting component in the example 23 of the present invention is described.Figure 28 is the profile perpendicular to light-emitting area of this light-emitting component 320.This light-emitting component 320 is compared with the light-emitting component 50 in the example 4, further possess in whole hole transporting layer 3 on scattered spacer 301 this point different.By this spacer 301, can suppress the inequality of the thickness of above-mentioned hole transporting layer 3, and can roughly be controlled at homogeneous thickness.Thus, can improve the inner evenness of brightness.Moreover, identical with light-emitting component 50 in the example 4 in fact for other formation, omit explanation.Moreover, except above-mentioned formation, can also between emitter 6 and electron injection electrode 7, possess electron supplying layer with and/or conductive layer etc.And then, can also between hole injecting electrode 2 and hole transporting layer 3, possess hole injection layer with and/or conductive layer etc.Again and then, can also be between hole transporting layer 3 and other organic layer or electrode, possess the abrasive protective layer that is used to prevent with spacer 301.
For each component parts of this light-emitting component 320, since identical with light-emitting component 50 and the light-emitting component 300 in the example 20 in the example 4 in fact, the Therefore, omited explanation.
Secondly, with Figure 29 the manufacture method of this light-emitting component 320 is described.This light-emitting component 320 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent hole injecting electrode 2 (Figure 29 (a)).
(c) then, in organic solvent, and spacer 301 ultrasonic waves are disperseed the hole transporting layer material dissolves.
(d) then, on above-mentioned hole injecting electrode 2, will disperse the solution coat film forming of the cavity conveying layer material of above-mentioned spacer 301, formed hole transporting layer 3 (Figure 29 (b)) then.Prepared substrate O thus.
(e) on the other hand, prepared substrate 1.
(f) then, on aforesaid substrate 1, form electron injection electrode 7 (Figure 29 (c)).
(g) then, on above-mentioned electron injection electrode 7, form and be included in the emitter 6 (Figure 29 (d)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding photism organic material 5 on the above-mentioned surface.Moreover, the formation method of emitter 6 such as above-mentioned.Prepared substrate P thus.
(h) then, make the emitter 6 of the hole transporting layer 3 of substrate O and substrate P fit together relative to one another (Figure 29 (e)).
Can make light-emitting component 320 with above operation, but also be not limited thereto.
(example 24)
With Fig. 8 the light-emitting component in the example 24 of the present invention is described.Light-emitting component in the example 24 is compared with the light-emitting component 60 in the example 5 shown in Figure 8, and is different on light-emitting component 50 this point that replace in the examples 4 with the light-emitting component in the example 23 320.Moreover, identical with light-emitting component 50 in the example 4 in fact for other formation, omit explanation.
(example 25)
With Fig. 4 the display unit in the example 25 of the present invention is described.Display unit in the example 25 is compared with the display unit 30 in the example 3 shown in Figure 4, and is different on light-emitting component 60 this point that replace with the light-emitting component in the example 24 in the example 5.According to the display unit of this example 25, by the hole transporting layer 3 that is built-in with spacer 301 it is fit together as described above.Thus, the uniform film thicknessization of hole transporting layer 3, thus can obtain the display unit that uniform, the top light of luminosity takes out structure.Moreover, identical with display unit 30 in the example 3 in fact for other formation, omit explanation.
Secondly, with Figure 30 the manufacture method of the display unit in this example 25 is described.Figure 30, be in the example 25 of other examples of a plurality of pixel 41R, 41G with RGB3 look, 41B display unit 330 perpendicular to light-emitting area and perpendicular to the profile of y electrode 23.By on each pixel 41R, 41G, 41B, the photism organic material in the emitter 65 and its illuminant colour are disposed accordingly, just become the full-color display unit of 3 primary colors.Its manufacture method is as follows, promptly at first forms thin-film transistor 21 and x electrode 22, y electrode 23 on substrate 1 in turn, afterwards, with the light-emitting component 320 of example 24 similarly, form electron injection electrode 7, then, form emitter 6.For a side transparency carrier 8, also with the light-emitting component 320 of example 24 similarly, form transparent hole injecting electrode 2, then, form the hole transporting layer 3 that is built-in with spacer 301.At this moment, on substrate 1, thin-film transistor 21, x electrode 22, y electrode 23, electron injection electrode 7 and then emitter 6 are formed according to each back, pixel 41 location.Therefore, if will be from thin-film transistor 21 to emitter the continuous manufacturing process of 6 usefulness stacked.On the other hand, because hole injecting electrode 2 and hole transporting layer 3 on the transparency carrier 8 can be flat films, therefore can be with silk screen printing or ink-jet method, other well-known painting process one film forming.Thus, can relax the requirement of the positioning accuracy when making hole transporting layer 3 and emitter 6 that substrate 1 and transparency carrier 8 are fit together, and operation can be oversimplified.By above operation, can form this display unit 330, but also be not limited thereto.
(example 26)
With Figure 31 the light-emitting component in the example 26 of the present invention is described.Figure 31 is the profile perpendicular to light-emitting area of this light-emitting component 340.This light-emitting component 340 is compared with the light-emitting component 80 in the example 7, further possess in whole electron supplying layer 81 on scattered spacer 301 this point different.By this spacer 301, can suppress the inequality of the thickness of above-mentioned electron supplying layer 81, and can roughly be controlled at homogeneous thickness.Thus, can improve the inner evenness of brightness.Moreover, identical with light-emitting component 80 in the example 7 in fact for other formation, omit explanation.Moreover, except above-mentioned formation, can also between hole injecting electrode 2 and hole transporting layer 3, possess hole injection layer with and/or conductive layer etc.And then, can also be between electron supplying layer 81 and other organic layer or electrode, possess the abrasive protective layer that is used to prevent with spacer 301.
For each component parts of this light-emitting component 340, since identical with light-emitting component 80 and the light-emitting component 300 in the example 20 in the example 7 in fact, the Therefore, omited explanation.
Secondly, with Figure 32 the manufacture method of this light-emitting component 340 is described.This light-emitting component 340 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent electron injection electrode 7 (Figure 32 (a)).
(c) then, in organic solvent, and spacer 301 ultrasonic waves are disperseed the electron supplying layer material dissolves.
(d) then, on above-mentioned electron injection electrode 7, will disperse the solution coat film forming of the electron transport layer material of above-mentioned spacer 301, formed electron supplying layer 81 (Figure 32 (b)) then.Prepared substrate Q thus.
(e) on the other hand, prepared substrate 1.
(f) then, on aforesaid substrate 1, form hole injecting electrode 2 (Figure 32 (c)).
(g) then, on above-mentioned hole injecting electrode 2, form hole transporting layer 3 (Figure 32 (d)).
(h) then, formation comprises above-mentioned emitter 6 (Figure 32 (e)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding photism organic material 5 from the teeth outwards on above-mentioned hole transporting layer 3.Moreover, the formation method of emitter 6 such as above-mentioned.Prepared substrate R thus.
(i) then, make the emitter 6 of the electron supplying layer 81 of substrate Q and substrate R fit together relative to one another (Figure 32 (f)).
Can make light-emitting component 340 with above operation, but also be not limited thereto.
(example 27)
With Fig. 3 the light-emitting component in the example 27 of the present invention is described.Light-emitting component in the example 27 is compared with the light-emitting component 20 in the example 2 shown in Figure 3, and is different on light-emitting component 10 this point that replace in the examples 1 with the light-emitting component in the example 26 340.Moreover, identical with light-emitting component 20 in the example 2 in fact for other formation, omit explanation.
(example 28)
With Fig. 4 the display unit in the example 28 of the present invention is described.Display unit in the example 28 is compared with the display unit 30 in the example 3 shown in Figure 4, and is different on light-emitting component 20 this point that replace with the light-emitting component in the example 27 in the example 2.According to the display unit of this example 28, by the electron supplying layer 81 that is built-in with spacer 301 it is fit together as described above.Thus, the uniform film thicknessization of electron supplying layer 81, thus can obtain the display unit that uniform, the top light of luminosity takes out structure.Moreover, identical with display unit 30 in the example 3 in fact for other formation, omit explanation.
Secondly, with Figure 33 the manufacture method of the display unit in this example 28 is described.Figure 33 be in the example 28 of other examples of a plurality of pixel 41R, 41G with RGB3 look, 41B display unit 350 perpendicular to light-emitting area and perpendicular to the profile of y electrode 23.By on each pixel 41R, 41G, 41B, the photism organic material in the emitter 65 and its illuminant colour are disposed accordingly, just become the full-color display unit of 3 primary colors.Its manufacture method is as follows, promptly at first forms thin-film transistor 21 and x electrode 22, y electrode 23 on substrate 1 in turn, afterwards, with the light-emitting component 340 of example 26 similarly, form hole injecting electrode 2, then, form hole transporting layer 3, emitter 6.For a side transparency carrier 8, also with the light-emitting component 340 of example 26 similarly, form the electron supplying layer 81 that is built-in with spacer 301.At this moment, on substrate 1, thin-film transistor 21, x electrode 22, y electrode 23, hole injecting electrode 2 and then emitter 6 are formed according to each back, pixel 41 location.Therefore, if will be from thin-film transistor 21 to emitter the continuous manufacturing process of 6 usefulness stacked.On the other hand, because electron injection electrode 7 and electron supplying layer 81 on the transparency carrier 8 can be flat films, therefore can be with silk screen printing or ink-jet method, other well-known painting process one film forming.Thus, can relax the requirement of the positioning accuracy when making emitter 6 and electron supplying layer 81 that substrate 1 and transparency carrier 8 are fit together, and operation can be oversimplified.By above operation, can form this display unit 350, but also be not limited thereto.
(example 29)
With Figure 34 the light-emitting component in the example 29 of the present invention is described.Figure 34 is the profile perpendicular to light-emitting area of this light-emitting component 360.This light-emitting component 360 is compared with the light-emitting component 100 in the example 10, further possess in whole electron supplying layer 81 on scattered spacer 301 this point different.By this spacer 301, can suppress the inequality of the thickness of above-mentioned electron supplying layer 81, and can roughly be controlled at homogeneous thickness.Thus, can improve the inner evenness of brightness.Moreover, identical with light-emitting component 100 in the example 10 in fact for other formation, omit explanation.Moreover, except above-mentioned formation, can also between hole injecting electrode 2 and hole transporting layer 3, possess hole injection layer with and/or conductive layer etc.And then, can also be between electron supplying layer 81 and other organic layer or electrode, possess the abrasive protective layer that is used to prevent with spacer 301.
For each component parts of this light-emitting component 360, since identical with light-emitting component 100 and the light-emitting component 300 in the example 20 in the example 10 in fact, the Therefore, omited explanation.
Secondly, with Figure 35 the manufacture method of this light-emitting component 360 is described.This light-emitting component 360 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent hole injecting electrode 2 (Figure 35 (a)).
(c) then, on above-mentioned hole injecting electrode 2, form hole transporting layer 3 (Figure 35 (b)).
(d) then, on above-mentioned hole transporting layer 3, formation comprises above-mentioned emitter 6 (Figure 35 (c)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding photism organic material 5 from the teeth outwards.Moreover, the formation method of emitter 6 such as above-mentioned.Prepared substrate S thus.
(e) on the other hand, prepared substrate 1.
(f) then, on aforesaid substrate 1, form electron injection electrode 7 (Figure 35 (d)).
(g) then, in organic solvent, and spacer 301 ultrasonic waves are disperseed the electron supplying layer material dissolves.
(h) then, on above-mentioned electron injection electrode 7, will disperse the solution coat film forming of the electron transport layer material of above-mentioned spacer 301, formed electron supplying layer 81 (Figure 35 (e)) then.Prepared substrate T thus.
(i) then, make the electron supplying layer 81 of the emitter 6 of substrate S and substrate T fit together relative to one another (Figure 35 (f)).
Can make light-emitting component 360 with above operation, but also be not limited thereto.
(example 30)
With Fig. 7 the light-emitting component in the example 30 of the present invention is described.Light-emitting component in the example 30 is compared with the light-emitting component 60 in the example 5 shown in Figure 7, and is different on light-emitting component 50 this point that replace in the examples 4 with the light-emitting component in the example 29 360.Moreover, identical with light-emitting component 60 in the example 5 in fact for other formation, omit explanation.
(example 31)
With Fig. 4 the display unit in the example 31 of the present invention is described.Display unit in the example 31 is compared with the display unit 30 in the example 3 shown in Figure 4, and is different on light-emitting component 20 this point that replace with the light-emitting component in the example 30 in the example 2.According to the display unit of this example 31, by the electron supplying layer 81 that is built-in with spacer 301 it is fit together as described above.Thus, the uniform film thicknessization of electron supplying layer 81, thus can obtain the display unit that uniform, the top light of luminosity takes out structure.Moreover, identical with display unit 30 in the example 3 in fact for other formation, omit explanation.
Secondly, with Figure 36 the manufacture method of the display unit in this example 31 is described.Figure 36, be in the example 31 of other examples of a plurality of pixel 41R, 41G with RGB3 look, 41B display unit 370 perpendicular to light-emitting area and perpendicular to the profile of y electrode 23.By on each pixel 41R, 41G, 41B, the photism organic material in the emitter 65 and its illuminant colour are disposed accordingly, just become the full-color display unit of 3 primary colors.Its manufacture method is as follows, promptly at first forms thin-film transistor 21 and x electrode 22, y electrode 23 in turn on substrate 1, afterwards, with the light-emitting component 360 of example 29 similarly, form electron injection electrode 7, then, form the electron supplying layer 81 that is built-in with spacer 301.For a side transparency carrier 8, also with the light-emitting component 360 of example 29 similarly, form hole injecting electrode 2, then, form hole transporting layer 3, emitter 6.At this moment, on substrate 1,, form, on a side transparency carrier 8, emitter 6 is formed according to each back, pixel 41 location according to each back, pixel 41 location with thin-film transistor 21, x electrode 22, y electrode 23, electron injection electrode 7.Be built-in with the electron supplying layer 81 of spacer 301, owing to can be flat film, therefore can be with silk screen printing or ink-jet method, other well-known painting process one film forming.Then, one side is located electron supplying layer 81 and emitter 6 relative to one another, and one side fits together substrate 1 and transparency carrier 8.By above operation, can form this display unit 370, but also be not limited thereto.
(example 32)
With Figure 37 the light-emitting component in the example 32 of the present invention is described.Figure 37 is the profile perpendicular to light-emitting area of this light-emitting component 380.This light-emitting component 380 is compared with the light-emitting component 120 in the example 13, further possess in whole hole injection layer 121 on scattered spacer 301 this point different.By this spacer 301, can suppress the inequality of the thickness of above-mentioned hole injection layer 121, and can roughly be controlled at homogeneous thickness.Thus, can improve the inner evenness of brightness.Moreover, identical with light-emitting component 120 in the example 13 in fact for other formation, omit explanation.Moreover, except above-mentioned formation, can also between emitter 6 and electron injection electrode 7, possess electron supplying layer with and/or conductive layer etc.And then, can also be between hole injection layer 121 and other organic layer or electrode, possess the abrasive protective layer that is used to prevent with spacer 301.
For each component parts of this light-emitting component 380, since identical with light-emitting component 120 and the light-emitting component 300 in the example 20 in the example 13 in fact, the Therefore, omited explanation.
Secondly, with Figure 38 the manufacture method of this light-emitting component 380 is described.This light-emitting component 380 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent electron injection electrode 7 (Figure 38 (a)).
(c) then, formation comprises above-mentioned emitter 6 (Figure 38 (b)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding photism organic material 5 from the teeth outwards on above-mentioned electron injection electrode 7.Moreover, the formation method of emitter 6 such as above-mentioned.Prepared substrate U thus.
(d) then, on above-mentioned emitter 6, form hole transporting layer 3 (Figure 38 (c)).
(e) on the other hand, prepared substrate 1.
(f) then, on aforesaid substrate 1, form hole injecting electrode 2 (Figure 38 (d)).
(g) then, in organic solvent, and spacer 301 ultrasonic waves are disperseed the hole injection layer material dissolves.
(h) then, on above-mentioned hole injecting electrode 2, will disperse the solution coat film forming of the electron transport layer material of above-mentioned spacer 301, formed hole injection layer 121 (Figure 38 (e)) then.Prepared substrate U thus.
(i) then, make the hole injection layer 121 of the hole transporting layer 3 of substrate U and substrate V fit together relative to one another (Figure 38 (f)).
Can make light-emitting component 380 with above operation, but also be not limited thereto.
(example 33)
With Fig. 3 the light-emitting component in the example 33 of the present invention is described.Light-emitting component in the example 33 is compared with the light-emitting component 20 in the example 2 shown in Figure 3, and is different on light-emitting component 10 this point that replace in the examples 1 with the light-emitting component in the example 32 380.Moreover, identical with light-emitting component 20 in the example 2 in fact for other formation, omit explanation.
(example 34)
With Fig. 4 the display unit in the example 34 of the present invention is described.Display unit in the example 34 is compared with the display unit 30 in the example 3 shown in Figure 4, and is different on light-emitting component 20 this point that replace with the light-emitting component in the example 33 in the example 2.According to the display unit of this example 34, by the hole injection layer 121 that is built-in with spacer 301 it is fit together as described above.Thus, the uniform film thicknessization of hole injection layer 121, thus can obtain the display unit that uniform, the top light of luminosity takes out structure.Moreover, identical with display unit 30 in the example 3 in fact for other formation, omit explanation.
Secondly, with Figure 39 the manufacture method of the display unit in this example 34 is described.Figure 39, be in the example 34 of other examples of a plurality of pixel 41R, 41G with RGB3 look, 41B display unit 390 perpendicular to light-emitting area and perpendicular to the profile of y electrode 23.By on each pixel 41R, 41G, 41B, the photism organic material in the emitter 65 and its illuminant colour are disposed accordingly, can make the full-color display unit of 3 primary colors.Its manufacture method is as follows, promptly at first forms thin-film transistor 21 and x electrode 22, y electrode 23 in turn on substrate 1, afterwards, with the light-emitting component 380 of example 32 similarly, form hole injecting electrode 2, then, form the hole injection layer 121 that is built-in with spacer 301.For a side transparency carrier 8, also with the light-emitting component 380 of example 32 similarly, form electron injection electrode 7, then, form emitter 6, hole transporting layer 3.At this moment, on substrate 1,, form, on a side transparency carrier 8, emitter 6 is formed according to each back, pixel 41 location according to each back, pixel 41 location with thin-film transistor 21, x electrode 22, y electrode 23, hole injecting electrode 2.Be built-in with the hole injection layer 121 of spacer 301, owing to can be flat film, therefore can be with silk screen printing or ink-jet method, other well-known painting process one film forming.Then, one side is located hole injection layer 121 and hole transporting layer 3 relative to one another, and one side fits together substrate 1 and transparency carrier 8.By above operation, can form this display unit 390, but also be not limited thereto.
(example 35)
With Figure 40 the light-emitting component in the example 35 of the present invention is described.Figure 40 is the profile perpendicular to light-emitting area of this light-emitting component 400.This light-emitting component 400 is compared with the light-emitting component 140 in the example 16, further possess in whole hole injection layer 121 on scattered spacer 301 this point different.By this spacer 301, can suppress the inequality of the thickness of above-mentioned hole injection layer 121, and can roughly be controlled at homogeneous thickness.Thus, can improve the inner evenness of brightness.Moreover, identical with light-emitting component 140 in the example 16 in fact for other formation, omit explanation.Moreover, except above-mentioned formation, can also between emitter 6 and electron injection electrode 7, possess electron supplying layer with and/or conductive layer etc.And then, can also be between hole injection layer 121 and other organic layer or electrode, possess the abrasive protective layer that is used to prevent with spacer 301.
For each component parts of this light-emitting component 400, since identical with light-emitting component 140 and the light-emitting component 300 in the example 20 in the example 16 in fact, the Therefore, omited explanation.
Secondly, with Figure 41 the manufacture method of this light-emitting component 400 is described.This light-emitting component 400 is made of following operation.
(a) prepare transparency carrier 8.
(b) then, on above-mentioned transparency carrier 8, form transparent hole injecting electrode 2 (Figure 41 (a)).
(c) then, in organic solvent, and spacer 301 ultrasonic waves are disperseed the hole injection layer material dissolves.
(d) then, on above-mentioned hole injecting electrode 2, will disperse the solution coat film forming of the hole injection layer material of above-mentioned spacer 301, formed hole injection layer 121 (Figure 41 (b)) then.Prepared substrate W thus.
(e) on the other hand, prepared substrate 1.
(f) then, on aforesaid substrate 1, form electron injection electrode 7 (Figure 41 (c)).
(g) then, formation comprises above-mentioned emitter 6 (Figure 41 (d)) of carrying on a shoulder pole the metal-oxide semiconductor (MOS) porous body 4 of holding photism organic material 5 from the teeth outwards on above-mentioned electron injection electrode 7.Moreover, the formation method of emitter 6 such as above-mentioned.
(h) then, on above-mentioned emitter 6, form hole transporting layer 3 (Figure 41 (e)).Prepared substrate X thus.
(i) then, make the hole transporting layer 3 of the hole injection layer 121 of substrate W and substrate X fit together relative to one another (Figure 41 (f)).
Can make light-emitting component 400 with above operation, but also be not limited thereto.
(example 36)
With Fig. 3 the light-emitting component in the example 36 of the present invention is described.Light-emitting component in the example 36 is compared with the light-emitting component 20 in the example 2 shown in Figure 3, and is different on light-emitting component 10 this point that replace in the examples 1 with the light-emitting component in the example 35 400.Moreover, identical with light-emitting component 20 in the example 2 in fact for other formation, omit explanation.
(example 37)
With Fig. 4 the display unit in the example 37 of the present invention is described.Display unit in the example 37 is compared with the display unit 30 in the example 3 shown in Figure 4, and is different on light-emitting component 20 this point that replace with the light-emitting component in the example 36 in the example 2.According to the display unit of this example 37, by the hole injection layer 121 that is built-in with spacer 301 it is fit together as described above.Thus, the uniform film thicknessization of hole injection layer 121, thus can obtain the display unit that uniform, the top light of luminosity takes out structure.Moreover, identical with display unit 30 in the example 3 in fact for other formation, omit explanation.
Secondly, with Figure 42 the manufacture method of the display unit in this example 37 is described.Figure 42, be in the example 37 of other examples of a plurality of pixel 41R, 41G with RGB3 look, 41B display unit 410 perpendicular to light-emitting area, and perpendicular to the profile of y electrode 23.By on each pixel 41R, 41G, 41B, the photism organic material in the emitter 65 and its illuminant colour are disposed accordingly, just become the full-color display unit of 3 primary colors.Its manufacture method is as follows, promptly at first forms thin-film transistor 21 and x electrode 22, y electrode 23 on substrate 1 in turn, afterwards, with the light-emitting component 400 of example 35 similarly, form electron injection electrode 7, then, form emitter 6, hole transporting layer 3.For a side transparency carrier 8, also with the light-emitting component 400 of example 35 similarly, form the hole injection layer 121 that is built-in with spacer 301.At this moment, on substrate 1, thin-film transistor 21, x electrode 22, y electrode 23, electron injection electrode 7 and then emitter 6 are formed according to each back, pixel 41 location.Therefore, if will be from thin-film transistor 21 to emitter the continuous manufacturing process of 6 usefulness stacked.On the other hand, on transparency carrier 8, form the flat film of hole injecting electrode 2 and hole injection layer 121.Because the hole injection layer 121 that is built-in with spacer 301 can be a flat film, therefore can be with silk screen printing or ink-jet method, other well-known painting process one film forming.Thus, can relax the requirement of the positioning accuracy when making hole injection layer 121 and emitter 6 that substrate 1 and transparency carrier 8 are fit together, and operation can be oversimplified.By above operation, can form this display unit 410, but also be not limited thereto.
(example 38)
With Figure 43 the display unit in the example 38 of the present invention is described.Figure 43 is the x electrode 22 that is parallel to the display unit 420 in the example 38, and perpendicular to the profile of light-emitting area.This display unit 420 is the active matrix type displays with thin-film transistor.This display unit 420 is compared with the display unit 160 in the example 19, further possess in whole adhesive linkage 161 on scattered spacer 301 this point different.By this spacer 301, can suppress the inequality of the thickness of above-mentioned adhesive linkage 161, and can roughly be controlled to homogeneous thickness.Thus, can improve the inner evenness of brightness.Moreover, identical with light-emitting component 160 in the example 19 in fact for other formation, omit explanation.Moreover, the layer of this display unit 420 constitutes, be 2 layers of formation of emitter/hole transporting layer, but also can be to have only emitter, perhaps emitter/electron supplying layer, hole transporting layer/emitter/electron supplying layer, hole injection layer/hole transporting layer/emitter/electron supplying layer, hole injection layer/hole transporting layer/emitter/hole blocking layer/electron supplying layer etc. are with 1 layer or the stacked formation of organic layer more than it.In addition, electron injection electrode also can be the formation of the reversed polarity that links together with thin-film transistor.
For each component parts of this display unit 420, since identical with light-emitting component 160 and the light-emitting component 300 in the example 20 in the example 19 in fact, the Therefore, omited explanation.
Moreover, of the present invention from example 20～38 light-emitting component and the manufacturing process of display unit, be preferably in the dry environment and carry out, and then be more preferably in low-oxygen environment and carry out.Thus, the characteristics such as reduction, high efficiency, long lifetime that can obtain operating voltage are improved.
In addition, in the display unit in example 22,25,28,31,34,37 of the present invention and 38, the pixel separation zone 42 of separating between each pixel can be set also.In addition, by on all pixels 41, form using the emitter 6 of the photism organic material 5 that sends single look, and colour filter or color conversion layer are set, can obtain the full-color display unit of 3 primary colors of other examples in the place ahead that light takes out face.
In addition, each above-mentioned example is the form of having showed an example, and its formation is not limited to the formation of each example.
Secondly, illustrate in further detail according to specific embodiment.
(embodiment 9)
With Figure 25 the light-emitting component in the embodiments of the invention 9 is described.The formation of this light-emitting component and manufacture method are identical with light-emitting component 300 in the example 20 in fact.In addition, for each component parts that uses, except spacer 3, identical with embodiment 1 in fact.With regard to spacer 3, use the LCD spacer (ponding chemical industry system ミ Network ロ パ one Le SI, number average diameter 4 μ m) of market sale.
Secondly, with Figure 26 the manufacture method of this light-emitting component is described.This light-emitting component is made of following operation.
(a),, then from the IPA solution of boiling, mention the back drying with alkali-free glass substrate (NEG system OA-10) basic lotion, water, acetone, isopropyl alcohol (IPA) ultrasonic waves for cleaning of market sale as transparency carrier 8.At last, carry out UV/O 3Clean.
(b) secondly, on this glass substrate, as electron injection electrode 1 usefulness sputtering method with ITO film forming (thickness: 150nm, film resistance: 10 Ω/) (Figure 26 (a)).
(c) secondly, form TiO in above-mentioned having on the ITO film glass substrate as the metal-oxide semiconductor (MOS) porous body layer 2Film porous body layer (Figure 26 (b)).With it as substrate M.Moreover, TiO 2The manufacture method of film porous body layer is identical with embodiment 1, omits detailed explanation.
(d) as substrate 1, prepare the glass substrate identical with transparency carrier 8, and cleaning similarly.
(e) secondly, on this glass substrate, the MgAg alloy is become the mode film forming (Figure 26 (c)) of 100nm with thickness as electron injection electrode 7 usefulness vacuum vapour depositions.
(f) secondly, concentration with 1wt% is dissolved in the chloroform PVK, to in this solution, make the spacer particle add 10wt% and the solution of ultrasonic wave dispersion, have film forming on the ITO film glass substrate above-mentioned with silk screen print method with respect to PVK, and as hole transporting layer 3 (Figure 26 (d)).With it as substrate N.
(g) secondly, emitter 6 and the hole transporting layer 3 on the substrate N on the substrate M are overlapped relative to one another, then under nitrogen environment, add heat fixation with 150 ℃, thereby make substrate M and substrate N fit together (Figure 26 (e)).
(h) secondly, with the periphery encapsulation of epoxy adhesive with the substrate that fits together.
Thus, make light-emitting component 300.
When estimating the light-emitting component of making similarly to Example 1, having obtained luminosity is 500cd/m 2Green luminous.In addition, brightness life-span that reduces by half is 11000 hours.This compares with above-mentioned comparative example 1, the luminosity height, and the life-span is long.And then the embodiment 1 that make same with not using spacer compares, and it is better luminous to have obtained inner evenness.
(embodiment 10)
With Figure 28 the light-emitting component in the embodiments of the invention 10 is described.The formation of this light-emitting component and manufacture method are identical with light-emitting component 320 in the example 23 in fact.In addition, identical with embodiment 4 in fact except spacer 301 for each component parts that uses, therefore omit explanation.And then, for spacer 301, use the spacer identical with embodiment 9, in fact also identical for the film-forming method of the hole transporting layer 3 that is built-in with spacer 301 with embodiment 9, so omit detailed explanation.When estimating the light-emitting component of making similarly to Example 1, having obtained luminosity is 600cd/m 2Green luminous.In addition, brightness life-span that reduces by half is 13000 hours.This compares with above-mentioned comparative example 1, the luminosity height, and the life-span is long.And then the embodiment 4 that make same with not using spacer compares, and it is better luminous to have obtained inner evenness.
(embodiment 11)
With Figure 31 the light-emitting component in the embodiments of the invention 11 is described.The formation of this light-emitting component and manufacture method are identical with light-emitting component 340 in the example 26 in fact.In addition, identical with embodiment 5 in fact except spacer 301 for each component parts that uses, therefore omit explanation.And then, for spacer 301, use the spacer identical with embodiment 9, for the film-forming method of the electron supplying layer 81 that is built-in with spacer 301, in fact also the film build method with the hole transporting layer 3 of embodiment 9 is identical, so omits detailed explanation.When estimating the light-emitting component of making similarly to Example 1, having obtained luminosity is 530cd/m 2Green luminous.In addition, brightness life-span that reduces by half is 12000 hours.This compares with above-mentioned comparative example 1, the luminosity height, and the life-span is long.And then the embodiment 5 that make same with not using spacer compares, and it is better luminous to have obtained inner evenness.
(embodiment 12)
With Figure 34 the light-emitting component in the embodiments of the invention 12 is described.The formation of this light-emitting component and manufacture method are identical with light-emitting component 360 in the example 29 in fact.In addition, identical with embodiment 6 in fact except spacer 301 for each component parts that uses, therefore omit explanation.And then, for spacer 301, use the spacer identical with embodiment 9, for the film-forming method of the electron supplying layer 81 that is built-in with spacer 301, in fact also the film build method with the hole transporting layer 3 of embodiment 9 is identical, so omits detailed explanation.When estimating the light-emitting component of making similarly to Example 1, having obtained luminosity is 550cd/m 2Green luminous.In addition, brightness life-span that reduces by half is 13000 hours.This compares with above-mentioned comparative example 1, the luminosity height, and the life-span is long.And then the embodiment 6 that make same with not using spacer compares, and it is better luminous to have obtained inner evenness.
(embodiment 13)
With Figure 37 the light-emitting component in the embodiments of the invention 13 is described.The formation of this light-emitting component and manufacture method are identical with light-emitting component 380 in the example 32 in fact.In addition, identical with embodiment 7 in fact except spacer 301 for each component parts that uses, therefore omit explanation.And then, for spacer 301, use the spacer identical with embodiment 9, for the film-forming method of the hole injection layer 121 that is built-in with spacer 301, in fact also the film build method with the hole transporting layer 3 of embodiment 9 is identical, so omits detailed explanation.When estimating the light-emitting component of making similarly to Example 1, having obtained luminosity is 540cd/m 2Green luminous.In addition, brightness life-span that reduces by half is 11000 hours.This compares with above-mentioned comparative example 1, the luminosity height, and the life-span is long.And then the embodiment 7 that make same with not using spacer compares, and it is better luminous to have obtained inner evenness.
(embodiment 14)
With Figure 40 the light-emitting component in the embodiments of the invention 14 is described.The formation of this light-emitting component and manufacture method are identical with light-emitting component 400 in the example 35 in fact.In addition, identical with embodiment 8 in fact except spacer 301 for each component parts that uses, therefore omit explanation.And then, for spacer 301, use the spacer identical with embodiment 9, for the film-forming method of the hole injection layer 121 that is built-in with spacer 301, in fact also the film build method with the hole transporting layer 3 of embodiment 9 is identical, so omits detailed explanation.When estimating the light-emitting component of making similarly to Example 1, having obtained luminosity is 580cd/m 2Green luminous.In addition, brightness life-span that reduces by half is 12000 hours.This compares with above-mentioned comparative example 1, the luminosity height, and the life-span is long.And then the embodiment 8 that make same with not using spacer compares, and it is better luminous to have obtained inner evenness.
As described above, the present invention has been described in detail with desirable example, but the present invention is not limited to this, for the dealer, certainly in the scope of the technology of the present invention that the claim scope is put down in writing, can realize many desirable variation and revise example.

Claims (42)

1. light-emitting component wherein, possesses:
The 1st transparent or semitransparent substrate;
The 2nd substrate that relatively is provided with above-mentioned the 1st substrate;
Be located at the 1st transparent or semitransparent electrode on above-mentioned the 1st substrate;
Relatively be located at the 2nd electrode on above-mentioned the 2nd substrate with above-mentioned the 1st electrode;
Comprise that load is held the metal-oxide semiconductor (MOS) porous body of photism organic material from the teeth outwards, and be sandwiched in the emitter between above-mentioned the 1st electrode and above-mentioned the 2nd electrode.
2. light-emitting component as claimed in claim 1 is characterized in that, above-mentioned metal-oxide semiconductor (MOS) porous body is the porous body that is made of the metal-oxide semiconductor (MOS) particle powder.
3. light-emitting component as claimed in claim 2 is characterized in that, above-mentioned metal-oxide semiconductor (MOS) particle powder is the particle powder that is made of n N-type semiconductor N material.
4. as any described light-emitting component of claim 1～3, it is characterized in that above-mentioned photism organic material utilizes chemisorbed to be held on the above-mentioned metal-oxide semiconductor (MOS) porous body surface by load.
5. as any described light-emitting component of claim 1～4, it is characterized in that, between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, except above-mentioned emitter, also possesses at least 1 organic layer, above-mentioned organic layer contains the organic material with cementability, as adhesive linkage, its layer is up and down fitted on the above-mentioned layer that contains the organic material with cementability.
6. light-emitting component as claimed in claim 5 is characterized in that, also possesses scattered spacer in above-mentioned organic layer, is stipulated the thickness of above-mentioned organic layer by above-mentioned spacer.
7. light-emitting component as claimed in claim 6 is characterized in that above-mentioned spacer is granular, and is transparent or semitransparent.
8. as claim 6 or 7 described light-emitting components, it is characterized in that above-mentioned spacer is made of the insulating properties material.
9. as any described light-emitting component of claim 6～8, it is characterized in that the particle diameter of above-mentioned spacer is in the scope of 0.01 μ m～10 μ m.
10. light-emitting component as claimed in claim 5 is characterized in that, the organic material with cementability that is contained in the above-mentioned organic layer contains the macromolecular material at least.
11. any described light-emitting component as claim 5～10 is characterized in that above-mentioned the 1st substrate is a glass substrate.
12. any described light-emitting component as claim 5～11 is characterized in that, also possesses the low-index layer that is clipped between above-mentioned the 1st substrate and above-mentioned the 1st electrode.
13. any described light-emitting component as claim 5～12, it is characterized in that, above-mentioned the 1st electrode is an electron injection electrode, above-mentioned the 2nd electrode is a hole injecting electrode, and, above-mentioned organic layer is a hole transporting layer, as adhesive linkage, its layer is up and down fitted above-mentioned hole transporting layer.
14. any described light-emitting component as claim 5～12, it is characterized in that, above-mentioned the 1st electrode is a hole injecting electrode, above-mentioned the 2nd electrode is an electron injection electrode, and, above-mentioned organic layer is a hole transporting layer, as adhesive linkage, its layer is up and down fitted above-mentioned hole transporting layer.
15. any described light-emitting component as claim 5～12, it is characterized in that, above-mentioned the 1st electrode is an electron injection electrode, and above-mentioned the 2nd electrode is a hole injecting electrode, and, except above-mentioned emitter, between above-mentioned emitter and above-mentioned hole injecting electrode, also possess hole transporting layer, and above-mentioned organic layer is an electron supplying layer, as adhesive linkage, its layer is up and down fitted above-mentioned electron supplying layer.
16. any described light-emitting component as claim 5～12, it is characterized in that, above-mentioned the 1st electrode is a hole injecting electrode, and above-mentioned the 2nd electrode is an electron injection electrode, and, except above-mentioned emitter, between above-mentioned emitter and above-mentioned hole injecting electrode, also possess hole transporting layer, and above-mentioned organic layer is an electron supplying layer, as adhesive linkage, its layer is up and down fitted above-mentioned electron supplying layer.
17. any described light-emitting component as claim 5～12, it is characterized in that, above-mentioned the 1st electrode is an electron injection electrode, and above-mentioned the 2nd electrode is a hole injecting electrode, and, except above-mentioned emitter, between above-mentioned emitter and above-mentioned organic layer, also possess hole transporting layer, and above-mentioned organic layer is a hole injection layer, as adhesive linkage, its layer is up and down fitted above-mentioned hole injection layer.
18. any described light-emitting component as claim 5～12, it is characterized in that, above-mentioned the 1st electrode is a hole injecting electrode, and above-mentioned the 2nd electrode is an electron injection electrode, and, except above-mentioned emitter, between above-mentioned emitter and above-mentioned organic layer, also possess hole transporting layer, and above-mentioned organic layer is a hole injection layer, as adhesive linkage, its layer is up and down fitted above-mentioned hole injection layer.
19. any described light-emitting component as claim 13～16 is characterized in that also possessing the hole injection layer that is clipped between above-mentioned hole injecting electrode and the above-mentioned hole transporting layer.
20., it is characterized in that also possessing the electron supplying layer that is clipped between above-mentioned electron injection electrode and the above-mentioned emitter as claim 13,14, any described light-emitting component of 17 or 18.
21., it is characterized in that above-mentioned hole injecting electrode is black as claim 13,15 or 17 described light-emitting components.
22. light-emitting component as claimed in claim 21 is characterized in that, the above-mentioned hole injecting electrode that is black is the electrode that is made of p N-type semiconductor N material.
23. as claim 13,14,17 or 18 described light-emitting components, it is characterized in that, at above-mentioned electron injection electrode with comprise also possessing metal oxide semiconductor layer between the emitter of above-mentioned metal-oxide semiconductor (MOS) porous body.
24. light-emitting component as claimed in claim 23 is characterized in that, above-mentioned metal oxide semiconductor layer is made of n N-type semiconductor N material.
25. any described light-emitting component as claim 1～24 is characterized in that also possessing the thin-film transistor that is connected with above-mentioned the 2nd electrode.
26. light-emitting component as claimed in claim 25 is characterized in that, above-mentioned thin-film transistor is the OTFT that is made of the film that contains organic material.
27. a display unit is characterized in that possessing:
The assortment light-emitting device array of requirement 25 or 26 described a plurality of light-emitting components of having the right two-dimensionally;
The a plurality of x electrodes that extend in parallel to each other along the 1st direction parallel with the face of above-mentioned light-emitting device array:
Along a plurality of y electrodes parallel with the face of above-mentioned light-emitting device array and that extend abreast with the 2nd direction of above-mentioned the 1st direction quadrature;
The above-mentioned thin-film transistor of above-mentioned light-emitting device array is connected with above-mentioned x electrode and above-mentioned y electrode respectively.
28. display unit as claimed in claim 27 is characterized in that, by hold the zone of the metal-oxide semiconductor (MOS) porous body of black dyes in the surface load, forms the border that is used for dividing by a plurality of light-emitting components of two-dimentional assortment.
29. any described light-emitting component as claim 1～4, it is characterized in that, also possess the thin-film transistor that is connected with above-mentioned the 2nd electrode and be clipped in above-mentioned the 2nd substrate that comprises above-mentioned thin-film transistor and the adhesive linkage between above-mentioned the 2nd electrode, and its layer is up and down fitted.
30. light-emitting component as claimed in claim 29 is characterized in that, also possesses scattered spacer in above-mentioned adhesive linkage, and is stipulated the thickness of above-mentioned adhesive linkage by above-mentioned spacer.
31. light-emitting component as claimed in claim 30 is characterized in that, above-mentioned spacer is made of the insulating properties material.
32. the manufacture method of a light-emitting component is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent electron injection electrode;
On above-mentioned electron injection electrode, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole transporting layer;
Make above-mentioned porous body on above-mentioned the 1st substrate and the above-mentioned hole transporting layer on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
33. the manufacture method of a light-emitting component is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole transporting layer;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of electron injection electrode;
On above-mentioned electron injection electrode, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Make above-mentioned hole transporting layer on above-mentioned the 1st substrate and the above-mentioned porous body on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
34. the manufacture method as claim 32 or 33 described light-emitting components is characterized in that, also possesses the operation that spacer is disperseed in above-mentioned hole transporting layer.
35. the manufacture method of a light-emitting component is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent electron injection electrode;
On above-mentioned electron injection electrode, form the operation of electron supplying layer;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole transporting layer;
On above-mentioned hole transporting layer, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Make above-mentioned electron supplying layer on above-mentioned the 1st substrate and the above-mentioned porous body on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
36. the manufacture method of a light-emitting component is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole transporting layer;
On above-mentioned hole transporting layer, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of electron injection electrode;
On above-mentioned electron injection electrode, form the operation of electron supplying layer;
Make above-mentioned porous body on above-mentioned the 1st substrate and the above-mentioned electron supplying layer on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
37. the manufacture method as claim 35 or 36 described light-emitting components is characterized in that, also possesses the operation that spacer is disperseed in above-mentioned electron supplying layer.
38. the manufacture method of a light-emitting component is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent electron injection electrode;
On above-mentioned electron injection electrode, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Comprising the operation that forms hole transporting layer on the emitter of above-mentioned porous body;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole injection layer;
Make above-mentioned hole transporting layer on above-mentioned the 1st substrate and the above-mentioned hole injection layer on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
39. the manufacture method of a light-emitting component is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent hole injecting electrode;
On above-mentioned hole injecting electrode, form the operation of hole injection layer;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of electron injection electrode;
On above-mentioned electron injection electrode, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Comprising the operation that forms hole transporting layer on the emitter of above-mentioned porous body;
Make above-mentioned hole injection layer on above-mentioned the 1st substrate and the above-mentioned hole transporting layer on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
40. the manufacture method as claim 38 or 39 described light-emitting components is characterized in that, also possesses the operation that spacer is disperseed in above-mentioned hole injection layer.
41. the manufacture method of a light-emitting component is characterized in that, comprising:
Prepare the operation of the 1st transparent or semitransparent substrate;
On above-mentioned the 1st substrate, form the operation of transparent or semitransparent electron injection electrode;
On above-mentioned electron injection electrode, form the operation of the porous body that constitutes by the metal-oxide semiconductor (MOS) particle powder;
Make photism organic material load be held in the lip-deep operation of above-mentioned porous body;
Comprising the operation that forms hole transporting layer on the emitter of above-mentioned porous body;
On above-mentioned hole transporting layer, form the operation of hole injecting electrode;
Prepare the operation of the 2nd substrate;
On above-mentioned the 2nd substrate, form the operation of thin-film transistor;
On above-mentioned thin-film transistor, form the operation of adhesive linkage;
Make above-mentioned hole injecting electrode on above-mentioned the 1st substrate and the above-mentioned adhesive linkage on above-mentioned the 2nd substrate toward each other and the operation that aligns with cooperating pel spacing;
The operation that above-mentioned the 1st substrate and above-mentioned the 2nd substrate are fitted.
42. the manufacture method of light-emitting component as claimed in claim 41 is characterized in that, also possesses the operation that spacer is disperseed in above-mentioned adhesive linkage.
CNB2004800165899A 2003-06-13 2004-06-10 Light-emitting device, method for producing same, and display Expired - Fee Related CN100484351C (en)

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TWI635476B (en) * 2016-08-31 2018-09-11 南韓商Ｌｇ顯示器股份有限公司 Organic light emitting display device and driving method thereof
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