CN1804664A - Optical device, transmission lens, image pickup device and electronic device - Google Patents
Optical device, transmission lens, image pickup device and electronic device Download PDFInfo
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- CN1804664A CN1804664A CNA2006100051475A CN200610005147A CN1804664A CN 1804664 A CN1804664 A CN 1804664A CN A2006100051475 A CNA2006100051475 A CN A2006100051475A CN 200610005147 A CN200610005147 A CN 200610005147A CN 1804664 A CN1804664 A CN 1804664A
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Abstract
An optical device includes a transparent substrate, and a multi-layer film including a dielectric film having a multi-layer structure formed on the transparent substrate, and a transparent conductive thin film having a predetermined thickness formed at a part of the dielectric film. The transparent conductive thin film may be formed at the outermost layer of the dielectric film and may have a thickness of 5 to 20 nm.
Description
The cross reference of related application
The present invention comprises the relevant theme of submitting to Jap.P. office with on November 30th, 2005 of Japanese patent application JP 2005-346444, and its full content is incorporated herein by reference.
Technical field
The present invention relates to a kind of for example optical device of camera lens, optical filter etc. that is applicable to, a kind of lens barrel that is used to carry this optical device, with and on the image pick up equipment and the electronic equipment of this optical device are installed.
Background technology
By convention, at image pick-up device and for example lens, optical filter be used for the CCD analogs such as (charge-coupled devices) of camera, be deposited on chip on this apparatus surface or dust etc. and in fact can export as image, it has constituted and has caused most of factor that output descends in this manufacture course of products.Therefore, the deposition that prevents chip or dust becomes and improves an output major issue to be solved.
A measure as this problem of processing generally is to use a kind of method, wherein this components is carried out ultrasonic cleaning, in the dirt pocket of fully removing chip and dust this components is assembled in the target product then.Yet, provide ultrasonic cleaning machine and dirt pocket to need huge cost for this purpose, cause the increase of manufacturing cost, therefore cause the rise of this product price.
Consider above-mentioned reason, wishing has a kind of method that does not need ultrasonic cleaning machine or dirt pocket, and wherein the surface of lens or analog has anti-electrostatic effect and keeps anti-reflective function, thereby prevents the chip that may produce owing to static or the deposition of dust.At this technology that anti-electrostatic effect is provided simultaneously and keeps this antireflection effect, made many reports, wherein used transparent conductive film.For example, the open text No.Hei2-94296 of Jap.P. has proposed a kind of stacked film, constitute by transparent and transparent conductive film, be used for eliminating the electrostatic charge that on the surface panel of the cathode ray tube (CRT) of various graphoscopes, TV (TV) receiver etc., produces.
Summary of the invention
Yet all above-mentioned technology are characterised in that, by transparent conductive film ground connection is obtained anti-electrostatic effect, therefore need provide special-purpose electrode to be used to implement ground connection processing.Thereby, above-mentioned configuration being applied to optical device for example in the situation of camera lens, need realize wiring (wiring) and ground connection by considering the movable part that is used to focus, thereby be difficult to implement this wiring.And because need to take out this electrode so that this transparent conductive film ground connection so it need carry out etch processes after forming this stacked film, perhaps shields this electrod assembly during this film forms step, this has caused complicated manufacture process.
Thereby, a kind of optical device need be provided, have anti-electrostatic effect and optical multilayer effect simultaneously, and do not need to be used to prevent that the ground connection of electrostatic charge from handling, and a kind of image pick up equipment and electronic equipment that this optical device is installed on it is provided.
As for this anti-electrostatic effect degree, do not need to eliminate the strong electrostatic charge that on the surface panel of TV CRT or analog, produces, but need the dust floating in the spontaneous attraction place of the meeting of elimination and the weak electrostatic charge of chip.
In order to address the above problem and to satisfy above-mentioned needs, according to embodiments of the invention, provide a kind of optical device, comprising: transparent substrate; And multilayer film, described multilayer film is included in the dielectric film of the sandwich construction that forms on this transparent substrate surface and transparent conductive film that form, that have predetermined thickness on the part layer of the dielectric film of this sandwich construction.
According to said structure, by consider this transparent conductive film in this multilayer film the position and the thickness of every tunic form this film, thereby can access a kind of optical device that does not need ground connection to handle and have anti-electrostatic effect and optical multilayer effect simultaneously.
In above-mentioned optical device, preferably, on the outermost layer of the dielectric film of this sandwich construction, provide this transparent conductive film.
According to this configuration, do not compare with there being the situation of transparent conductive film on this outermost layer, can obtain the improvement of fragmental deposit preferably effect (anti-electrostatic effect).
In addition, in above-mentioned optical device, preferably, provide film in skin one side with respect to this transparent conductive film, the specific inductive capacity that the thickness of this film is no more than 150nm and/or this film is not more than 20.
According to this configuration, provide this film that satisfies above-mentioned condition in skin one side, thereby can obtain a kind of optical device that has anti-electrostatic effect and optical multilayer effect simultaneously more definitely with respect to this transparent conductive film.
According to another embodiment of the present invention, provide a kind of optical device is carried on lens barrel on the lens barrel, wherein this optical device comprises transparent substrate; And multilayer film, described multilayer film comprises the dielectric film that is formed on the lip-deep sandwich construction of this transparent substrate and transparent conductive film that form, that have predetermined thickness on the part layer of the dielectric film of this sandwich construction.
According to this configuration, because this optical device that is carried on this lens barrel does not need ground connection processing, and have anti-electrostatic effect and optical multilayer effect simultaneously, this lens barrel can be installed on image pick up equipment or the analog and unload from it, and can prevent in this installation and the deposition of chip or dust when unloading.
According to still another embodiment of the invention, provide a kind of have the optical device on the light path of being arranged on and the image pick up equipment of image pick-up device, wherein this optical device comprises transparent substrate; And multilayer film, this multilayer film comprises the dielectric film that is formed on the lip-deep sandwich construction of this transparent substrate and transparent conductive film that form, that have predetermined thickness on the part layer of the dielectric film of this sandwich construction.
According to this structure, because this optical device does not need ground connection to handle, so this optical device can be arranged on the movable part of the lens barrel of the lens barrel scalability types of image pick up equipment for example.And, because this optical device has anti-electrostatic effect and optical multilayer effect simultaneously, thus chip or dust deposition can be prevented on this optical device surface, and can pick up the image that influenced by chip or dust.
According to another embodiment of the present invention, a kind of electronic equipment is provided, be used to show by being arranged on the information that optical device on the light path transmits the light that this device interior produces, wherein this optical device comprises transparent substrate and multilayer film, and this multilayer film comprises the dielectric film that is formed on the lip-deep sandwich construction of this transparent substrate and transparent conductive film that form, that have predetermined thickness on the part layer of the dielectric film of this sandwich construction.
According to this configuration, because this optical device has anti-electrostatic effect and optical multilayer effect simultaneously, so can prevent chip or dust in the deposition that is arranged at this optical device surface on this light path, and can show the image that influenced by chip or dust.
According to the present invention, consider by the position of this transparent conductive film in this multilayer film that provides on this optical device and the specific inductive capacity that is arranged on the dielectric film of this transparent conductive film outer layer side are provided, thereby can access a kind of high-performance optics equipment, it has the anti-electrostatic effect of the deposition that is used to suppress chip or dust and simultaneously because the optical effect that sandwich construction produced, and does not need to implement ground connection processing.
Therefore, when the present invention being applied to the optical device of camera lens and infrared ray (IR) cutting wave filter (cut filter) for example, can reduce the possibility that chip or dust deposit on this optical device, thereby, can get rid of the needs that assemble the decontamination chamber of this components for the ultrasonic cleaning machine that is used for clean lens and being used at the manufacturing site location of lens barrel or analog.Thereby can significantly reduce manufacturing cost.
In addition, because got rid of the needs that the ground connection that is used to prevent electrostatic charge is handled, this optical device according to the present invention can be used in the camera lens that movable part for example has the focusing function.
In addition, when according to optical device applications of the present invention to image pick up equipment for example changeable-lens type camera or electronic equipment for example during projector, chip or the dust deposition on camera lens, IR cutting wave filter, solid-state image pickup apparatus etc. can be prevented, thereby the high quality graphic that influenced by chip or dust can be obtained.
Description of drawings
Fig. 1 has shown the example (1) that is equipped with according to the camera of optical device of the present invention;
Fig. 2 is the schematic cross sectional views of demonstration according to the configuration of the optical device of the embodiment of the invention;
Fig. 3 shows the schematic cross sectional views of the configuration of optical device according to another embodiment of the present invention;
Fig. 4 shows a kind of method that is used to measure about dust deposit improvement amount of the present invention;
Fig. 5 is the synoptic diagram that shows about the measurement result (1) of dust deposit improvement amount of the present invention;
Fig. 6 is the synoptic diagram that shows about the measurement result (2) of dust deposit improvement amount of the present invention;
Fig. 7 shows according to the thickness of transparent conductive film of the present invention and the synoptic diagram of reflection characteristic;
Fig. 8 is presented at according to forming MgF on the transparent conductive film of the present invention
2The synoptic diagram of the reflection characteristic in the situation of film;
Fig. 9 is the perspective schematic view of optical device according to still another embodiment of the invention;
Figure 10 shows optical device shown in Figure 9;
Figure 11 shows the example (2) that is equipped with according to the camera of optical device of the present invention;
Figure 12 shows the example that is equipped with according to the projector of optical device of the present invention.
Embodiment
Now, will describe embodiment in detail with reference to accompanying drawing below according to optical device of the present invention.
Fig. 1 shows the embodiment of application according to the camera (image pick up equipment) of optical device of the present invention.In Fig. 1, optical device 1 is a camera lens, is installed on the tube telescopic movable part 101 as the lens barrel work of camera 100.Optical device 1 is maintained on the tube of movable part 101.
Fig. 2 is the schematic cross sectional views of demonstration according to the configuration of the embodiment of optical device of the present invention.Optical device 1 in the present embodiment comprises, the transparent substrate 2 that forms by glass or plastics etc., multilayer film (antireflection film), this multilayer film is made of transparent dielectric layer 3 and transparent conductive film 4, and this transparent dielectric layer 3 is made of first to the 3rd different dielectric film 3a-3c of the refractive index that is used for the antireflection purpose.Though in this example, this dielectric layer 3 is to form by stacked these three layers of dielectric films, as long as can make dielectric layer 3 provide the antireflection effect of expection just enough, the number of plies of formation dielectric layer 3 is not limited to the numeral (3) in the present embodiment.In addition, Fig. 2 has also shown the relation between this multilayer, but does not show the relation between the film thickness of this multilayer.
In above-mentioned optical device 1, the first dielectric film 3a that forms at the upper surface of this transparent substrate 2, constitute dielectric layer 3 is that it has λ/4 (λ: thickness optical wavelength) by the middle refractive index material dielectric that forms such as aluminium oxide for example.And the second dielectric film 3b that forms at the upper surface of this first dielectric film 3a is by high index material Ta for example
2O
5In the dielectric that forms, it has the thickness of 2 λ/4.In addition, the 3rd dielectric film 3c is that it has the thickness of λ/4 by the low refractive index material dielectric that forms such as magnesium fluoride for example.The low refractive index examples of substances not only comprises magnesium fluoride, also comprises monox, fluorine-containing inorganics or organism, siliceous inorganics or organism and comprises any one potpourri at least in these materials.Thereby according to the thickness of this refractive index and this transparent conductive film 4 etc., with the stacked thickness setting of this first to the 3rd dielectric film be can the usable reflection exterior light optimal value.
And the example that constitutes the material of this optical device 1 outermost transparent conductive film 4 comprises, ITO (mixing indium tin oxide), FTO (fluorine doped tin oxide), ATO (antimony doped tin oxide), In
2O
3, SnO
2, the sull of ZnO etc. and gold, silver, copper, aluminium etc. metallic film.Also can adopt these combination.In the present example, this transparent conductive film 4 uses ITO.
The film that constitutes these materials of this antireflection film can form by the technology of for example vacuum evaporation, ion plating and vacuum coating.In the present embodiment, for example, form dielectric layer 3, wherein be evacuated to about 8.0e by vacuum vapor deposition method
-4(Pa) by resistance heated, electron beam heating etc. the material of this first to the 3rd dielectric film 3a-3c is heated successively in the vacuum chamber and vaporize, thereby on this transparent substrate 2, form film.Similarly, this transparent conductive film 4 can be for example forms by vacuum vapor deposition method, wherein when introducing oxygen in the vacuum chamber by heating such as electron beam heating with vaporize and form this film, in case be evacuated to about 8.0e
-4(Pa) pressure, thus about 2.5e obtained
-4(Pa) oxygen pressure.Thereby the sheet resistance (surface resistance) of this transparent conductive film 4 that forms is expected at about 10-3000 Ω/ (also being expressed as Ω or sq).Along with the reduction of this thin-film electro resistance, can obtain higher anti-electrostatic effect.
Now, with another embodiment that illustrates below according to optical device of the present invention.
The cut-open view of demonstration according to the configuration of another embodiment of optical device of the present invention has been shown among Fig. 3.Optical device 10 in the present embodiment has a kind of configuration, and a more outer side of the transparent conductive film 4 of optical device 1 wherein shown in Figure 2 provides dielectric film 5.Dielectric layer 5 preferably by use the low refractive index material for example magnesium fluoride form, and can utilize and above-mentionedly form as any method in the method that forms the antireflection film on the optical device 1.In addition, though in the present embodiment, dielectric film on these transparent conductive film 4 upper surfaces 5 is made of individual layer, and this dielectric layer 5 also can be the dielectric layer of sandwich construction.
Next local, in order to check anti-electrostatic effect, detect the minimizing that manually is deposited on the amount of dust on this optical device, thereby measure dust deposit improvement amount according to optical device of the present invention.This measuring method describes with reference to Fig. 4.
At first, prepare a sample, dielectric layer 3 wherein shown in Figure 2 forms on half surface, a left side of circular transparent substrate 2, comprises that the antireflection film of dielectric layer 3 and transparent conductive film 4 forms (referring to Fig. 4 left side) on right half surface of the residue of this substrate 2.That is to say, only on half of this sample, provide dielectric layer 3, and second half provide by coating with this optical device 1 in the antireflection film that disposes of same mode.Then, be ready to this dust is dispersed on the sample that produces above, will have optical device 1 counter-rotating of dust on it then so that face down (referring to Fig. 4 right side) by utilizing the bar file that lens paper is processed into the dust that filamentous form produces.Then, implement this check, wherein relatively after light is injected on this sample, remain in the amount of dust on this sample by a kind of method.This method is not limited only to this a kind of method, can be any method in the following scope, as long as this method has and manually is deposited on chip or dust on the optical device and measures the chip that remains on this optical device or the process of amount of dust after this optical device is exerted one's influence.
For optical device shown in Figure 3 10, similarly, also implement to measure, wherein only provide dielectric layer 3, and provide the antireflection film that comprises dielectric layer 3, transparent conductive film 4 and dielectric film 5 by coating on right half surface of the residue of this sample on half surface, a left side of this sample by preparing a sample.In addition,, have the sample of different-thickness, measure dust deposit improvement amount for the dielectric film 5 on this transparent conductive film 4 as for optical device 10.
The result of above-mentioned measurement will describe in conjunction with Fig. 5.In Fig. 5, abscissa axis is represented the dielectric film thickness (nm) that forms on this transparent conductive film, axis of ordinates representative with half lip-deep dust deposit improvement amount (%) of this sample of this optical device the same manner configuration; Thereby 100% dust deposit improvement scale shows this dust and is removed the situation that does not have dust to stay deposition fully.As can be seen from Figure 5, when on this transparent conductive film 4 not during this dielectric film (film thickness on this transparent conductive film: 0nm) this dust deposit improvement amount optimum, promptly when this transparent conductive film 4 forms the outermost layer of this antireflection film; In this case, the dust deposit of acquisition 90% prevents effect.
On the other hand, as can be seen, in situation about dielectric film 5 being layered on the transparent conductive film 4, promptly in the situation (referring to Fig. 3) of the configuration of this optical thin film 10, along with the increase that is layered in dielectric film 5 thickness on the transparent conductive film 4, this dust deposit improvement amount can reduce and the dust deposit improved effect can reduce.At last, when the thickness of this dielectric film surpasses 150nm, can not obtain the dust deposit improved effect.About this point, when using material type, can obtain and above-mentioned similar trend with material replacement formation this dielectric layer 3, transparent conductive film 4 and dielectric film 5 of being approximately equal to specific inductive capacity.
And, will describe experimental result same as described above and that except the material that changes dielectric film on this transparent conductive film 4, promptly change this specific inductive capacity.In Fig. 6, abscissa axis is represented the dielectric film thickness (nm) that forms on this transparent conductive film, axis of ordinates representative with half lip-deep dust deposit improvement amount (%) of this sample of this optical device the same manner configuration.By using five kinds to have respectively with respect to the material of the DIELECTRIC CONSTANT of permittivity of vacuum 4.5,5.5,7.0,12 and 20 and implement this experiment.In addition, the measurement result shown in Fig. 5 is to obtain according to 4.5 DIELECTRIC CONSTANT.
As can be seen, under the situation of the configuration of optical thin film 10, along with being layered in increasing of dielectric film 5 specific inductive capacity on the transparent conductive film 4, this dust deposit improvement amount can reduce, and the dust deposit improved effect can reduce.This be considered to because, when the specific inductive capacity of dielectric film 5 increased, the static capacity of dielectric film 5 can strengthen, and can accumulate more electric charge in skin one side of dielectric film 5, can easier generation to the absorption of dust.As can be seen, can be not more than about 20 and keep this dust absorption effect by specific inductive capacity is set at from this experimental result.
As mentioned above, dielectric film 5 is formed by the low refractive index material, its example comprises that not only magnesium fluoride also comprises for example monox and comprise any one potpourri at least in these materials of fluorine-containing inorganics or organism, siliceous inorganics or organism, and wherein the specific inductive capacity of these materials is not more than 20.
For example, calcium fluoride (CaF
2) have a specific inductive capacity 6.76, magnesium fluoride (MgF
2) have specific inductive capacity 4.87 (5.45), a silicon dioxide (SiO
2) have a specific inductive capacity 4.55 (4.49).Two values that value is the isomers of this material of the specific inductive capacity of one matter.
And, the example of organic fluorocompound (F base organism) comprises tetrafluoroethylene resin (PTFE), tetrafluoroethene-perfluoroalkyl vinyl ether polymer resin (PFA), hexafluoropropylene (HFP)/tetrafluoroethylene (TFE) polymer resin (FEP), tetrafluoroethene-vinyl polymerization resin (ETFE), pvdf resin (PVDF) and vinyl trifluorochlorethylene resin (PCTFE).In these materials, FEP has about 2.0 lowest dielectric constant, and PVDF has about 6.0 high-k.
In addition, siliceous organic example (silica-based organism) comprises polymethyl siloxane, prestox third siloxane (octamethyl trisiloxane), decamethyl tetrasiloxane (decamethyl tetrasiloxane), methyl phenyl silicone, and methylhydrogenpolysi,oxane (methyl hydrogen polysiloxane).These materials have the specific inductive capacity in 2.17 to 2.88 scopes.Pass between these materials and their specific inductive capacity ties up in the following table gathers.
Table 1: the example of material and specific inductive capacity
| Material | Temperature (℃) | DIELECTRIC CONSTANT |
| SiO 2 | 20 | 4.55(4.49) |
| MgF 2 | 25 | 4.87(5.45) |
| CaF 2 | - | 6.76 |
| Fluorine-based organism | - | 2.0-6.0 |
| Silica-based organism | - | 2.17-2.88 |
Using fluorine-containing material or silicon-containing material to form under the situation of these formation optical device 10 outermost dielectric films 5, can be expected on this optical device surface and can have anti-water effect.
Here, will study the thickness of the transparent conductive film of this optical device.The thickness of this transparent conductive film and the example of the relation between the reflectance characteristic have been shown among Fig. 7, and this transparent conductive film is to dispose in the mode identical with optical device as shown in Figure 11.
In Fig. 7, the abscissa axis representative is injected into the wavelength (nm) of the optical fiber on this optical device, and axis of ordinates is represented reflectance (%).In the figure, " ITO " represents this transparent conductive film 4, and " three layers of AR " represents dielectric film 3.Comparison curves A (not having ITO (having only three layers of AR)) and curve C (three layers of AR+ITO (30nm is thick)), curve C shows higher reflectance.This shows, (see figure 1) in the configuration of formation transparent conductive film 4 on this dielectric layer 3, this antireflection effect is lowered.
In order to handle this problem, on this dielectric layer 3, form in the configuration of transparent conductive film 4 (dielectric film on the transparent conductive film is that 0nm is thick), promptly under the situation of the film configuration identical, by transparent conductive film 4 being set to such an extent that approach as far as possible and be improved with optical device shown in Figure 11.Can be clear by curve B more shown in Figure 7 (three layers of AR+ITO (20nm is thick)) and curve C (three layers of AR+ITO (30nm is thick)), by with the thickness setting of transparent conductive film 4 for being not more than 30nm, can comprise visible light, approximately obtain to be not more than 2.0% reflectance characteristic on the wavelength coverage of 400-750nm.Though transparent conductive film 4 is thinner to be preferred, if this thickness is too little, just can not keep good electrical conductivity.Therefore, the thickness of transparent conductive film 4 is preferably the scope of about 5-20nm.
Usually, requiring to have in the optical device of better quality, it is said that the reflectance characteristic in expection wavelength coverage (for example visible region) is preferably 0.5% or lower.In view of the above, will study than the better antireflection property of above-mentioned reflectance characteristic requiring.Here, will describe, promptly by on transparent conductive film 4, further forming for example magnesium fluoride (MgF of low refractive index material to the following fact
2) dielectric film 5 improve this reflectance performance.
Fig. 8 shows the example of a reflectance characteristic, wherein is with MgF
2Film is formed on situation on the transparent conductive film 4 in the optical device 10 as dielectric film 5.In Fig. 8, the abscissa axis representative is injected into the wavelength (nm) of the optical fiber on this optical device, and axis of ordinates is represented reflectance (%).In the figure, curve D is illustrated in the MgF that 80nm is thick
2Film is formed on reflectance characteristic in the situation on the thick transparent conductive film of 20nm 4 upper surfaces as dielectric film 5.In this membrane structure example,, this reflectance characteristic can be brought up in fact and the identical level of the situation of this transparent conductive film 4 (curve A) not though this transparent conductive film 4 is formed the thickness of 20nm.
Low refractive index material as used herein, the same material described in also can the explanation of application drawing 3.That is to say that available example comprises that not only magnesium fluoride also comprises for example monox and comprise any one potpourri at least in these materials of fluorine-containing inorganics or organism, siliceous inorganics or organism.
Therefore as can be seen, under the situation to the given limit priority of dust deposit improved effect, can adopt this transparent conductive film 4 is the outermost configurations of this stacked film from the measurement result shown in Fig. 5-8.On the other hand, when obtaining the dust deposit improved effect of certain level, hope improves the situation of reflectance performance, preferably, in skin one side of this transparent conductive film 4, form low refractive index material MgF for example with 150nm or lower limited physics film thickness
2Dielectric film 5, thereby can obtain dust deposit improved effect and antireflection effect simultaneously.In addition, also can be set at and be not more than 20 and obtain the dust deposit improved effect by specific inductive capacity with dielectric film 5.
Thereby, have for example antireflection effect of anti-electrostatic effect and optical multilayer effect simultaneously according to optical device of the present invention, and the ground connection that does not need to be used for antistatic purpose is handled.Thereby, not only in the situation that this optical device applications is arrived common lens, and this optical device applications for example under the situation of optical filter, can both obtained anti-electrostatic effect to the optical device that shows the particular optical multiple layering effect when guaranteeing this single optical device function.In addition, because do not need ground connection processing, this optical device can be arranged on any diverse location.
In addition, because optical device according to the present invention has the high-antistatic effect, so this optical device applications for example in the situation of video camera and camera, can be picked up the high quality graphic that influenced by chip or dust to image pick up equipment.
In addition, though top the explanation on the more outer side with respect to this transparent conductive film forms MgF
2Or the dielectric film 5 of analog, but this film 5 is not to be formed by dielectric, but can form by any material with low refractive index.
Now, below will another embodiment according to optical device of the present invention be described.
Fig. 9 is the perspective schematic view of optical device according to another embodiment of the present invention.Optical device 30 shown in Figure 3 have with Fig. 2 in the configuration of identical film, wherein form transparent conductive film 4 at outermost layer.This transparent conductive film 4 has the diameter that equates with the effective aperture 31 of image pick up equipment, for example form on the part outermost layer of this optical device 30, and this transparent conductive film 4 does not form in the zone 32 of its outer periphery side.
Figure 10 shows optical device shown in Figure 9 30.As shown in figure 10, the center is shot in on the optical device 30 that is installed on the camera at the parallel luminous flux on this optical axis.In this example, the diameter on camera lens surface of luminous flux that passes the diaphragm diameter 35 of diaphragm (diaphragm) 34 is important, and this diameter is effective aperture 31.In order to ensure obtaining the dust deposit improved effect, in this diameter range, provide the multi-layer film structure that constitutes by dielectric layer 3 and transparent conductive film 4 to be absolutely necessary at least.Wish to consider zoom and the macroefficiency and the similar factor of camera, thereby set the diameter of this multilayer film according to the maximal value of this effective aperture.
Thereby, this multilayer film with effect of the present invention is to form in the zone of the part light path of the luminous flux that passes this optical device 30 (with the zone of this effective aperture overlapping), rather than in the zone 32 that this luminous flux does not pass through, form, thereby chip that the past deposits in this effective aperture and dust mostly will be as shown in arrow 36 and be attracted in this outer circumferential side zone 32, and especially, can reduce the chip that deposits in the light path in this effective aperture and the ratio of dust.
Though in the embodiment shown in Fig. 9 and 10, it is to form to reach predetermined diameter like this that transparent conductive film 4 is only arranged, dielectric layer 3 also can form like this to reach predetermined diameter.In this case, only in desired zone, form the multilayer film among the present invention, thereby can predict the saving of material and the reduction of cost.In addition, the embodiment shown in Fig. 9 and 10 also is available for the optical device 10 with film configuration shown in Figure 3 certainly.
Now, an embodiment will be described below, wherein both sides all be had the camera lens that arrives image pick up equipment according to the optical device applications of multilayer film of the present invention.In the present embodiment, use the example of camera as this image pick up equipment.
Figure 11 be show will optical device applications according to the present invention to the synoptic diagram of the embodiment of adjustable focus camera.Camera 120 has movable part 122, this movable part 122 has as the function of barrel and has the lens barrel Collapsible structure that is used to focus, and with on the camera lens of optical device applications of the present invention to the lens barrel that is installed in this movable part 122., optical device of the present invention do not need ground connection processing because can having anti-electrostatic effect, thus arrange that the degree of freedom of this optical device is higher, and this optical device can be installed on this movable part.
Provide this antireflection film in a side of this optical device 40 by coating if should be only, promptly only in the air side of this optical device 1, moving of this movable part 122 that is used to focus will produce convection current, chip that causes owing to this convection current and dust deposit can take place on the surface of camera body 121 sides of this transparent substrate 2, promptly should not provide the coating of optical device 1 on the surface with form shown in Figure 1, need be thereby cause by unloading the work that this movable part 122 (barrel) is wiped the chip and the dust of deposition.
Yet, when the camera lens both sides of installing on this movable part 22 provide according to antireflection film of the present invention, in optical device 40, when when moving this movable part 122 and move this optical device 40, can suppress the chip that causes owing to convection current and the deposition of dust in air side and camera body 121 sides.This has guaranteed any side in the air side of this optical device 40 and camera body 121 sides, can not produce the needs that deposit the work of chip and dust for wiping, thereby simplified for the control example of chip and dust as wiping the work of chip and dust, and the user is freed from the loaded down with trivial details work of this control by unloading this optical device 40.In addition, though the barrel of this image pick up equipment can be removed and install to be used for lens changing, even also be difficult for generation chip or dust in this case in the lip-deep deposition of the camera lens of this barrel.
In addition, though in optical device 40, the antireflection film that forms on the optical device 1 shown in Figure 2 is that the both sides of the transparent substrate 2 in Figure 11 form, but can also adopt another kind of configuration, wherein is the antireflection film that provides in the both sides of this transparent substrate 2 in the optical device 10 shown in Figure 3.Can also adopt another kind of configuration, wherein optical device 1 be made up to be applied to the both sides of transparent substrate 2 respectively with the different film configurations in the optical device 10.
Now, an embodiment will be described below, wherein will optical device applications according to the present invention to the camera lens of electronic equipment.In the present embodiment, use the example of projector (projection-type display) as this electronic equipment.
The embodiment that uses according to the projector of optical device of the present invention has been shown among Figure 12.This projector comprises three pipe projector, liquid crystal projection apparatus etc., and all these types all are configured to, and generate the light with pictorial information in this projector apparatus inside, and transmit this light so that be projected on the screen by projecting lens.Optical device of the present invention is used as the projecting lens of projector 200 shown in Figure 12.
In many cases, be provided for thermal-radiating fan, and produce the convection current that this fan causes in projector 200 inside.Therefore, when the camera lens both sides all have the optical device applications of antistatic structure to this projecting lens 201 as shown in figure 11, not only can prevent chip or dust in the outside of this projecting lens 201 deposition, and can also prevent in the inboard of this projecting lens 201 deposition.In addition, can certainly use the optical device that this antistatic film only is provided in a side.
As mentioned above, be applied to optical device, just can obtain to have simultaneously and suppress chip and the effect (anti-electrostatic effect) of dust deposit and the high-performance optics equipment of optical multilayer effect, and not need ground connection processing by the multilayer film that will as above dispose.
For example, be applied to optical device for example during camera lens when having stacked film according to transparent conductive film of the present invention, the deposition of chip or dust will be difficult for taking place, thereby eliminated for the ultrasonic clean machine of preparing to be used to clean this camera lens, be used for, thereby can significantly improve manufacturing cost at the decontamination chamber of the assembly work of the manufacturing site location of this barrel etc. and the needs of analog.In addition, for this optical device, lens barrel and the image pick up equipment of these assemblies is installed and the delivery process of electronic equipment in, also can prevent the generation of chip or dust deposit.
Though shown the example that optical device of the present invention is used for image pick up equipment (for example camera) and electronic equipment (for example projector) among the embodiment in above-mentioned Fig. 1,11 and 12, these equipment can be different on the size ratio between this image forming apparatus and this chip or the dust.For example, with image pick up equipment for example charge-coupled device (CCD) and the complementary metal oxide semiconductor (CMOS) (CMOS) in the camera compare with the liquid crystal board in the liquid crystal projection apparatus, image pick up equipment in the camera is less, thereby the influence in image pick up equipment of chip or dust is relatively large, and this camera is influenced by this chip or dust more.In addition, image processing system and the distance that is arranged between this optical device (for example optical low-pass filter) of side before or after this image processing system are relatively large in projector, and less relatively in camera, thereby should influence bigger once more in camera.Therefore, the picture quality that produced of dust deposit improved effect of the present invention (anti-electrostatic effect) strengthens at image pick up equipment for example for example more obvious in the projector than electronic equipment in the camera.
In addition, the invention is not restricted to the foregoing description, within the scope of the invention, other various configurations also are possible.
For example, though described in the above-described embodiments optical device applications to the example of camera lens, optical device of the present invention also go for other various optical devices for example infrared ray (IR) cutting wave filter, bend monolithic level camera lens of prism, optical low-pass filter, image pick-up device or the like.In addition, the present invention can also be applied to various the transparent substrates for example glass lens of glasses and plastic lens, the CRT of TV receiver, display unit of portable audio player or the like.
In addition, when optical device of the present invention being installed to image pick up equipment for example camera or electronic equipment is for example on the projector, the quantity of the optical device of this installation can be more than one (for example a plurality of), and can be according to the type of this equipment and suitably select for use.
Claims (18)
1. optical device comprises:
Transparent substrate; With
Multilayer film, it is included in the dielectric film of the sandwich construction that forms on the described transparent substrate surface and transparent conductive film that form, that have predetermined thickness on the part layer of the described dielectric film of described sandwich construction.
2. optical device as claimed in claim 1 is characterized in that:
Described transparent conductive film forms on the outermost layer of the dielectric film of described sandwich construction.
3. optical device as claimed in claim 1 or 2 is characterized in that:
Skin one side with respect to described transparent conductive film provide film and
The thickness of described film is no more than 150nm.
4. optical device as claimed in claim 1 or 2 is characterized in that:
Skin one side with respect to described transparent conductive film provide film and
The specific inductive capacity of described film is not more than 20.
5. optical device as claimed in claim 1 or 2 is characterized in that:
Skin one side with respect to described transparent conductive film provide film and
The thickness of described film is no more than 150nm, and the specific inductive capacity of described film is not more than 20.
6. as any described optical device among the claim 3-5, it is characterized in that:
The described film that provides in skin one side with respect to described transparent conductive film comprises fluorine-containing material as a kind of composition, and silicon-containing material perhaps comprises any one the potpourri at least in these materials as a kind of composition.
7. as any described optical device among the claim 3-5, it is characterized in that:
The described film that provides in skin one side with respect to described transparent conductive film comprises monox, magnesium fluoride, calcium fluoride or comprises in these compounds any one potpourri at least.
8. as any described optical device among the claim 3-5, it is characterized in that:
The described film that provides in skin one side with respect to described transparent conductive film comprises single or multiple lift.
9. optical device as claimed in claim 1 or 2 is characterized in that:
The thickness of described transparent conductive film is 5-20nm.
10. optical device as claimed in claim 9 is characterized in that:
Described transparent conductive film comprises to be mixed indium tin oxide, fluorine doped tin oxide, antimony doped tin oxide, gold, silver, copper, aluminium or comprises potpourri at least a in these materials.
11. optical device as claimed in claim 1 is characterized in that:
At least in the effective aperture of the equipment that is equipped with described optical device, form described multilayer film.
12. optical device as claimed in claim 1 further comprises
Multilayer film on described transparent substrate opposite side, described multilayer film comprises the dielectric film of sandwich construction, and forms the transparent conductive film with predetermined thickness in the part layer of the dielectric film of described sandwich construction.
13. a lens barrel, it has the optical device that remains on, wherein:
Described optical device comprises transparent substrate and multilayer film, and this multilayer film is included in the dielectric film of the sandwich construction that forms on the described transparent substrate surface and transparent conductive film that form, that have predetermined thickness on the part layer of the described dielectric film of described sandwich construction.
14. an image pick up equipment, it has optical device and image pick-up device on the light path of being arranged on, wherein:
Described optical device comprises transparent substrate and multilayer film, and this multilayer film is included in the dielectric film of the sandwich construction that forms on the described transparent substrate surface and transparent conductive film that form, that have predetermined thickness on the part layer of the described dielectric film of described sandwich construction.
15. image pick up equipment as claimed in claim 14 is characterized in that:
Described optical device is mounted on the movable part of described image pick up equipment.
16. image pick up equipment as claimed in claim 15 is characterized in that:
Described movable part is the structure of a scalability types, and wherein said optical device moves on optical axis direction.
17. an electronic equipment, be used for by the light transmission that will generate at described device interior by being arranged on optical device on the light path display message, wherein
Described optical device comprises transparent substrate and multilayer film, and this multilayer film is included in the dielectric film of the sandwich construction that forms on the described transparent substrate surface and transparent conductive film that form, that have predetermined thickness on the part layer of the described dielectric film of described sandwich construction.
18. electronic equipment as claimed in claim 17 is characterized in that:
The described light that generates in described electronic equipment internal is transmitted through described optical device, thereby projects on the screen.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005008040 | 2005-01-14 | ||
| JP2005008040 | 2005-01-14 | ||
| JP2005346444 | 2005-11-30 |
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| Publication Number | Publication Date |
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| CN1804664A true CN1804664A (en) | 2006-07-19 |
| CN100388013C CN100388013C (en) | 2008-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100051475A Expired - Fee Related CN100388013C (en) | 2005-01-14 | 2006-01-13 | Optical device, transmission lens, image pickup device and electronic device |
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| Country | Link |
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| CN (1) | CN100388013C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114107B (en) * | 2006-07-25 | 2010-08-18 | Hoya株式会社 | Imaging device |
| CN110456434A (en) * | 2019-09-18 | 2019-11-15 | 杭州科汀光学技术有限公司 | It is a kind of to inhibit reflecting mirror of surface dirt and preparation method thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2590133B2 (en) * | 1987-09-10 | 1997-03-12 | 日本板硝子株式会社 | Transparent plate having conductive anti-reflective coating |
| DE69620065T2 (en) * | 1995-07-06 | 2002-11-14 | Sony Corp | Electrically conductive, anti-reflective coating |
| JPH1062603A (en) * | 1996-04-08 | 1998-03-06 | Sumitomo Chem Co Ltd | Conductive reflection preventing plate, and optical part provided with it |
| JPH1062602A (en) * | 1996-08-26 | 1998-03-06 | Toppan Printing Co Ltd | Conductive anti-reflection film |
| JPH10206603A (en) * | 1997-01-20 | 1998-08-07 | Dainippon Printing Co Ltd | Reflection preventive film and manufacture thereof |
| EP0913712A1 (en) * | 1997-10-29 | 1999-05-06 | N.V. Bekaert S.A. | Multilayer electrically conductive anti-reflective coating |
| JP2000021336A (en) * | 1998-07-01 | 2000-01-21 | Nippon Sheet Glass Co Ltd | Glass article having conductive reflection preventive film and cathode-ray tube using it |
| US6657271B2 (en) * | 2001-05-01 | 2003-12-02 | Nidek Company, Limited | Transparent substrate with multilayer antireflection film having electrical conductivity |
| CN1389346A (en) * | 2001-06-04 | 2003-01-08 | 冠华科技股份有限公司 | Antireflective optical multilayer film |
| JP2004361662A (en) * | 2003-06-04 | 2004-12-24 | Ito Kogaku Kogyo Kk | Conductive transparent layered body |
-
2006
- 2006-01-13 CN CNB2006100051475A patent/CN100388013C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114107B (en) * | 2006-07-25 | 2010-08-18 | Hoya株式会社 | Imaging device |
| CN110456434A (en) * | 2019-09-18 | 2019-11-15 | 杭州科汀光学技术有限公司 | It is a kind of to inhibit reflecting mirror of surface dirt and preparation method thereof |
| CN110456434B (en) * | 2019-09-18 | 2022-12-13 | 杭州科汀光学技术有限公司 | Reflecting mirror capable of inhibiting surface dust and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100388013C (en) | 2008-05-14 |
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