CN1797659A - Method for forming barrier between patternized film layer and plasma display - Google Patents
Method for forming barrier between patternized film layer and plasma display Download PDFInfo
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- CN1797659A CN1797659A CN 200410102429 CN200410102429A CN1797659A CN 1797659 A CN1797659 A CN 1797659A CN 200410102429 CN200410102429 CN 200410102429 CN 200410102429 A CN200410102429 A CN 200410102429A CN 1797659 A CN1797659 A CN 1797659A
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Abstract
The method includes steps: carrying out half-tone screen typography in order to form multiple first patterns on material layer; then patternizing the first patterns to form patternized film layer possessing multiple second patterns. The method reduces amount of material consumed in patternizing technical procedure so as to save technical cost.
Description
Technical field
The invention relates to a kind of Patternized technique (patterning process), and particularly about the formation method of the barrier (rib) of a kind of patterning rete of saving material and plasma display (Plasma Display Panel).
Background technology
Comparatively general Patternized technique comprises screen printing process and little shadow/etch process at present.Figure 1A to Fig. 1 D is a kind of flow process profile of known Patternized technique.Please refer to Figure 1A, it forms earlier skim layer 102 comprehensively on material layer 100.Then please refer to Figure 1B, utilize lithography process on rete 102, to form patterning photoresist layer 104.Then, please refer to Fig. 1 C, is mask with this patterning photoresist layer 104, removes the part rete 102 that patterning photoresist layer 104 is exposed.Please refer to Fig. 1 D afterwards, remove patterning photoresist layer 104, so that only there is patterning rete 108 on the material layer 100 from rete 102.
Hence one can see that, must remove unwanted part rete 102 in above-mentioned Patternized technique, to form patterning rete 108.Therefore, if the material price of rete 102 is comparatively expensive, then form the waste that patterning rete 108 will cause on the technology cost with above-mentioned Patternized technique.
From the above, form the problem that patterning rete 108 can solve above-mentioned too waste material with screen printing process.Yet therefore and do not meet the trend of assembly microminiaturization now, because screen printing technology can't form meticulousr pattern.
Summary of the invention
In view of this, the purpose of this invention is to provide the formation method of the barrier of a kind of patterning rete and plasma display, to save spent quantity of material in the technology.
The present invention proposes a kind of formation method of barrier of plasma display, is suitable for forming on the substrate barrier that comprises a plurality of second barrier patterns.The dielectric layer that wherein has been formed with a plurality of addressing electrodes (address electrodes) on this substrate and has covered these addressing electrodes.The formation method of this barrier is to carry out screen printing process earlier, to form a plurality of first barrier patterns on dielectric layer, then form the patterning photoresist layer on these barrier patterns, and this patterning photoresist layer exposes the part of each first barrier pattern.Then, be these first barrier patterns of mask etching with the patterning photoresist layer, removing the part first barrier pattern that exposes, and then on dielectric layer, form barrier with a plurality of second barrier patterns.Wherein, barrier is the part dielectric layer that exposes corresponding to these addressing electrodes.Remove the patterning photoresist layer afterwards again.
Described according to preferred embodiment of the present invention, above-mentioned screen printing process for example is that the half tone that will have a plurality of openings earlier is arranged on the dielectric layer, then barrier material is coated on the half tone, so that barrier material flow on the dielectric layer via the opening of half tone, to form the first above-mentioned barrier pattern.Wherein, the live width of these first barrier patterns for example is 200 microns.Then, again with this half tone by removing on the dielectric layer.In one embodiment, the spacing (pitch) of the first above-mentioned barrier pattern for example is 394 microns.
Described according to preferred embodiment of the present invention, these first barrier patterns of etching with the step that forms this barrier in, comprise that the live width of these second barrier patterns that make this barrier is 140 microns.In one embodiment, the spacing of these second barrier patterns for example is 394 microns.In addition, the second barrier pattern of this barrier for example is strip, trellis or cellular pattern.
Described according to preferred embodiment of the present invention, the first above-mentioned barrier method of patterning of etching for example is sandblast (sandblasting) technology.In addition, after removing the patterning photoresist layer, also comprise and carry out repeatedly typography, so that barrier reaches required specific thicknesses.
The present invention proposes a kind of formation method of patterning rete, and the method is to carry out screen printing process earlier, to form a plurality of first patterns on material layer.Follow these first patterns of patterning, have the patterning rete of a plurality of second patterns with formation.
Embodiment according to the present invention is described, and the step of first pattern that patterning is above-mentioned for example is to form the patterning photoresist layer earlier on these first patterns, and this patterning photoresist layer exposes the some of each first pattern.Then, be mask and part first pattern that etch exposed goes out with this patterning photoresist layer, have the patterning rete of the second above-mentioned pattern with formation.And then remove this patterning photoresist layer.
Embodiment according to the present invention is described, and part first method of patterning that etch exposed goes out comprises dry-etching or Wet-type etching.
Embodiment according to the present invention is described, above-mentioned screen printing process for example is that the half tone that will have a plurality of openings earlier is arranged on the material layer, then film material is coated on the half tone, so that film material flow on the dielectric layer via the opening of half tone, to form the first above-mentioned pattern.
The present invention utilizes screen printing technology to form a plurality of larger-size first patterns earlier on material layer, and these first patterns of patterning more afterwards are to form second pattern with the size that meets demand on material layer.With known technology of only carrying out patterning with little shadow/etch process by contrast, the quantity of material that the present invention can reduce in the Patternized technique to be removed, and then save the technology cost.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Embodiment
After the present invention utilized the mode of screen printing to form a plurality of first patterns, these first patterns of patterning again were to obtain to have second pattern of actual required size.Compare with technique known, the present invention not only can save the technology cost, also can form the comparatively meticulous rete of pattern.Below will the present invention be described, but it is not in order to limit the present invention for embodiment.The ordinary skill of technical field that the present invention belongs to can be done variation to following embodiment slightly according to the present invention's spirit, precisely because still belong in the present invention's the scope.
Fig. 2 A to Fig. 2 D is the formation flow process profile of patterning rete in one of the present invention preferred embodiment.Please, at first carry out screen printing process, on material layer 200, to form a plurality of first patterns 210 earlier with reference to Fig. 2 A.Wherein, this screen printing technology for example is earlier web plate 220 to be arranged on the material layer 200, then film material 202 is coated on the web plate 220,, thereby formed first pattern 210 so that film material 202 can flow on the material layer 200 via the opening 222 of web plate 220.Wherein, the step that film material 202 is coated on the Printing screen 220 for example can be finished through scraper 206.
It should be noted that the present invention does not limit 222 the shape and the arrangement mode opened of web plate 220, the ordinary skill of technical field that the present invention belongs to can be selected 222 the shape and the arrangement mode opened of web plate 220 according to the pattern of actual process institute desire formation.
Please refer to Fig. 2 B, on material layer 200, form after first pattern 210, follow web plate 220 by removing on the material layer 200.Then, on first pattern 210, form patterning photoresist layer 212.Wherein, the method that forms patterning photoresist layer 212 for example is to form photoresist layer 211 (as shown in Figure 3A) earlier on material layer, and then utilizes light source 215, and is mask to photoresist layer 211 expose (shown in Fig. 3 B) with light shield 214.Develop again afterwards, removing on the material layer 200 and the part photoresist layer 211 on first pattern 210, and then on first pattern 210, form the patterning photoresist layer 212 shown in Fig. 2 B.
Please refer to Fig. 2 C, is mask with patterning photoresist layer 212, and first pattern 210 is carried out etching, has the patterning rete 230 of a plurality of second patterns 232 with formation.Wherein, the method for etching first pattern 210 for example is dry-etching or Wet-type etching.
Afterwards, please refer to Fig. 2 D, patterning photoresist layer 212 by removing on the patterning rete 230, is promptly finished the technology of patterning rete 230 this moment.
To be example explanation the present invention below with the method for the barrier that forms plasma display.
Fig. 4 A to Fig. 4 D is the formation flow process profile of the barrier of one of the present invention preferred embodiment ionic medium display.Please refer to Fig. 4 A, at first carry out screen printing process, on dielectric layer 400, to form a plurality of first barrier patterns 410.Wherein, dielectric layer 400 for example is arranged on the substrate 401, and covers a plurality of addressing electrodes 403 on the substrate 401.
From the above, this screen printing technology is arranged at web plate 420 on the dielectric layer 400 earlier, then barrier material 402 is coated on the web plate 420,, thereby formed the first barrier pattern 410 so that barrier material 402 can flow on the dielectric layer 400 via the opening 422 of web plate 420.The video and graphic array (video graphics array, in plasma display VGA), the live width a of the first barrier pattern 410 for example is 200 microns, the spacing b between the first barrier pattern 410 then for example is 394 microns.In addition, the above-mentioned step that barrier material 402 is coated on the Printing screen 420 for example can be finished through scraper 406.
Similarly, the present invention does not limit the shape and the arrangement mode of the opening 422 of web plate 420, and the ordinary skill of technical field that the present invention belongs to can be selected the shape and the arrangement mode of the opening 422 of web plate 420 according to the pattern of actual process institute desire formation.
Please refer to Fig. 4 B, on dielectric layer 400, form after the first barrier pattern 410, follow web plate 420 by removing on the dielectric layer 400.Then, on the first barrier pattern 410, form patterning photoresist layer 412.Wherein, the method that forms patterning photoresist layer 412 for example is identical with the method for formation patterning photoresist layer 212 in the foregoing description, repeats no more herein.
Please refer to Fig. 4 C, is mask with patterning photoresist layer 412, and the first barrier pattern 410 is carried out etching, has the barrier 430 of a plurality of second barrier patterns 432 with formation.In the technology of the barrier of plasma display, it for example is to come the etching first barrier pattern 410 with blasting craft, to form barrier 430.At this, the second barrier pattern 432 that constitutes barrier 430 can be strip (stripe) (as shown in Figure 5), trellis (waffle) (as shown in Figure 6) or the pattern of cellular (honey comb) (as shown in Figure 7), and the present invention is not limited it.In addition, (video graphics array, plasma display VGA) are example, and the live width c of the second barrier pattern 432 of barrier 430 for example is 140 microns, and the spacing d of the second barrier pattern 432 then for example is 394 microns with the video and graphic array.
Afterwards, please refer to Fig. 4 D, by removing on the barrier 430, promptly finish the technology of the barrier 430 on dielectric layer 400 this moment, shown in Fig. 4 D with patterning photoresist layer 412.
In addition, please refer to Fig. 8, in the technology of the barrier of plasma display, after finishing the barrier 430 that Fig. 4 D illustrated, then can also see through repeatedly typography and reach the required specific thicknesses t of barrier 430, in one embodiment, the specific thicknesses t of barrier 430 for example is between 120 microns to 140 microns.
Though it should be noted that the foregoing description is that barrier with plasma display is that the example explanation is of the present invention, it is not in order to limiting the present invention's range of application, and the present invention also can be applied in the technology of other patterning rete.
In sum, the present invention utilizes screen printing technology to form a plurality of larger-size first patterns earlier, these first patterns of patterning more afterwards, and then form a plurality of second patterns with required size.Therefore the present invention can have following advantage:
1. compare with known technology of only carrying out patterning with little shadow/etch process, the quantity of material that the present invention can reduce in the Patternized technique to be removed, and then save the technology cost.
2. compare with known technology of only carrying out patterning with screen printing technology, the present invention can form comparatively meticulous pattern, therefore can conform to the trend of assembly microminiaturization now.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; the ordinary skill of any technical field that the present invention belongs to; in thought that does not break away from the present invention and scope; when can doing a little change and improvement, so the present invention's protection range is as the criterion when looking claims person of defining.
Description of drawings
Figure 1A to Fig. 1 D is a kind of flow process profile of known Patternized technique.
Fig. 2 A to Fig. 2 D is the formation flow process profile of patterning rete in one of the present invention preferred embodiment.
Fig. 3 A to Fig. 3 B is the formation flow process generalized section of the patterning photoresist layer of Fig. 2 B.
Fig. 4 A to Fig. 4 D is the formation flow process generalized section of the barrier of one of the present invention preferred embodiment ionic medium display.
Fig. 5 to Fig. 7 is respectively the schematic perspective view of the barrier of the plasma display that is formed among the present invention's the embodiment.
Fig. 8 is the generalized section of the barrier among one of the present invention embodiment.
The primary clustering description of symbols
100,200: material layer
102: rete
104,212,412: the patterning photoresist layer
108: the patterning rete
202: film material
206,406: scraper
210: the first patterns
211: photoresist layer
214: light shield
215: light source
220,420: half tone
222,422: the opening of half tone
230: the patterning rete
232: the second patterns
400: dielectric layer
401: substrate
402: barrier material
403: addressing electrode
410: the first barrier patterns
430: barrier
432: the second barrier patterns
T: the specific thicknesses of barrier
Claims (12)
1. the formation method of the barrier of a plasma display, be suitable on substrate, forming barrier, this barrier comprises a plurality of second barrier patterns, and the dielectric layer that has been formed with a plurality of addressing electrodes and has covered above-mentioned these addressing electrodes on this substrate is characterized in that the formation method of the barrier of this plasma display comprises:
Carry out screen printing technology, on this dielectric layer, to form a plurality of first barrier patterns;
Form the patterning photoresist layer on this barrier pattern, wherein this patterning photoresist layer exposes the part of each above-mentioned these first barrier pattern;
With this patterning photoresist layer is mask and part that above-mentioned these the first barrier patterns of etching expose, and to form this barrier on this dielectric layer, wherein this barrier exposes this dielectric layer of part corresponding to above-mentioned these addressing electrodes; And
Remove this patterning photoresist layer.
2. according to the formation method of the barrier of the described plasma display of claim 1, it is characterized in that this screen printing technology comprises:
Web plate is arranged on this dielectric layer, and this web plate has a plurality of openings;
Barrier material is coated on this web plate, so that this barrier material flow on this dielectric layer via above-mentioned these openings, to form above-mentioned these first patterns, the live width of wherein above-mentioned these first patterns is 200 microns; And
Remove this web plate.
3. according to the formation method of the barrier of the described plasma display of claim 2, it is characterized in that this screen printing technology comprises:
Web plate is arranged on this dielectric layer, and this web plate has a plurality of openings;
Barrier material is coated on this web plate, so that this barrier material flow on this dielectric layer via above-mentioned these openings, to form above-mentioned these first patterns, distance (pitch) is 394 microns between wherein above-mentioned these first patterns; And
Remove this web plate.
4. according to the formation method of the barrier of the described plasma display of claim 2, it is characterized in that above-mentioned these the first barrier patterns of etching with the step that forms this barrier in, comprise making that the live width of stating these second barrier patterns on this barrier is 140 microns.
5. according to the formation method of the barrier of the described plasma display of claim 4, it is characterized in that this barrier pattern of etching with the step that forms this barrier in, comprise that making the spacing (pitch) of stating these second barrier patterns on this barrier is 394 microns.
6. according to the formation method of the barrier of the described plasma display of claim 1, it is characterized in that this barrier pattern of etching with the step that forms this barrier in, comprise making that to state these second barrier patterns on this barrier be strip, trellis or honeycomb-like pattern.
7. according to the formation method of the barrier of the described plasma display of claim 1, it is characterized in that above-mentioned these the first barrier method of patterning of etching comprise blasting craft.
8. as the formation method of the barrier of the plasma display as described in according to claim 1, it is characterized in that after removing this patterning photoresist layer, also comprise and carry out repeatedly typography, so that this barrier reaches a specific thicknesses.
9. the formation method of a patterning rete is characterized in that comprising:
Carry out screen printing technology, on material layer, to form a plurality of first patterns; And
Above-mentioned these first patterns of patterning, to form the patterning rete, wherein this patterning rete has a plurality of second patterns.
10. according to the formation method of the described patterning rete of claim 9, it is characterized in that the step of above-mentioned these first patterns of patterning comprises:
Form the patterning photoresist layer on above-mentioned these first patterns, wherein this patterning photoresist layer exposes the part of each above-mentioned these first pattern;
With this patterning photoresist layer is the part of stating these first patterns on mask and etch exposed go out, has this patterning rete of above-mentioned these second patterns with formation; And
Remove this patterning photoresist layer.
11., it is characterized in that etch exposed states the method for the part of these first patterns on going out and comprise dry-etching or Wet-type etching according to the formation method of the described patterning rete of claim 10.
12., it is characterized in that this screen printing technology comprises according to the formation method of the described patterning rete of claim 9:
Web plate is arranged on this material layer, and this web plate has a plurality of openings;
Film material is coated on this web plate, so that this film material flow on this material layer via above-mentioned these openings, to form above-mentioned these first patterns; And
Remove this web plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101024298A CN100511556C (en) | 2004-12-24 | 2004-12-24 | Method for forming barrier between patternized film layer and plasma display |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101024298A CN100511556C (en) | 2004-12-24 | 2004-12-24 | Method for forming barrier between patternized film layer and plasma display |
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| Publication Number | Publication Date |
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| CN1797659A true CN1797659A (en) | 2006-07-05 |
| CN100511556C CN100511556C (en) | 2009-07-08 |
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| CNB2004101024298A Expired - Fee Related CN100511556C (en) | 2004-12-24 | 2004-12-24 | Method for forming barrier between patternized film layer and plasma display |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102431955A (en) * | 2011-11-25 | 2012-05-02 | 上海交通大学 | Preparation method of PDMS (polydimethylsiloxane) mask microstructure used for sandblast micro-processing |
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2004
- 2004-12-24 CN CNB2004101024298A patent/CN100511556C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102431955A (en) * | 2011-11-25 | 2012-05-02 | 上海交通大学 | Preparation method of PDMS (polydimethylsiloxane) mask microstructure used for sandblast micro-processing |
| CN102431955B (en) * | 2011-11-25 | 2014-08-27 | 上海交通大学 | Preparation method of PDMS (polydimethylsiloxane) mask microstructure used for sandblast micro-processing |
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| CN100511556C (en) | 2009-07-08 |
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Granted publication date: 20090708 Termination date: 20121224 |