CN1797207A - Lithographic apparatus and device manufacturing method - Google Patents
Lithographic apparatus and device manufacturing method Download PDFInfo
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- CN1797207A CN1797207A CNA2005100035482A CN200510003548A CN1797207A CN 1797207 A CN1797207 A CN 1797207A CN A2005100035482 A CNA2005100035482 A CN A2005100035482A CN 200510003548 A CN200510003548 A CN 200510003548A CN 1797207 A CN1797207 A CN 1797207A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
Abstract
A lithography apparatus including a projection system configured to project a beam of radiation onto a substrate as an array of sub-beams of radiation and an array of individually controllable elements configured to modulate the sub-beams of radiation. The apparatus also includes a data-path including at least one data manipulation device arranged to at least partly convert data defining a requested pattern to a control signal suitable for controlling the array of individually controllable elements to form substantially the requested pattern on the substrate. The data manipulation device is arranged to carry out the conversion by applying a pseudo-inverted form of a point-spread function matrix to a column vector representing the requested pattern. The point-spread function matrix includes information about the shape and relative position of the point-spread function of each spot to be exposed on the substrate by one of the sub-beams of radiation at a given time.
Description
Technical field
The present invention relates to lithographic equipment and device making method.
Background technology
Lithographic equipment is that required pattern is added in equipment on the target part of substrate (for example, workpiece, object, display etc.).Lithographic equipment can be used in the manufacturing of device that integrated circuit (IC) for example, flat-panel monitor and other contain fine structure.Pattern in the conventional lithography equipment forms the corresponding circuit pattern of individual layer that device (being also referred to as mask or master reticle) can be used for generation and IC (or other devices).Described pattern can be imaged on the target part (for example comprising the part of tube core, a tube core or a plurality of tube core) of the substrate (for example silicon wafer or glass plate) that scribbles one deck radiation-sensitive materials (for example photoresist).Pattern forms device can comprise that independent controllable array replaces mask to produce circuit pattern.Use the etching system of this array to be commonly referred to the maskless system.
In general, single substrate comprises several the adjacent target parts that will sequentially expose.Known lithographic equipment has and is referred to as stepping type and sweep type, in stepping type by once on the target part, each target partly being shone whole pattern exposure; In sweep type by radiation beam at assigned direction (" scanning " direction) scan pattern, or antiparallel parallel ground synchronous scanning substrate with described direction, thus each target is partly shone.
The user of this equipment determines to be formed on the required pattern on the substrate, and described pattern characterizes with specific dosage profile (dose-map).In the maskless system, the data of expression required dosage figure are handled with reference to correcting measured results, so that obtain to send to the drive signal of independent controllable array.High pattern intensity zone requires the spot that exposes on the substrate overlapped in dosage profile.Will find that under some environment, these overlapping area of the pattern can cause error in the processing of required dosage figure.
The process that an area of the pattern is connected to another area of the pattern is called stitching.Can carry out about (for example from single optical column, reception is from the input of an independent controllable array) each pattern stitching or between each pattern of different optical row (for example, receiving each input) from the independent controllable array of a separation stitching.Stitching under these situations can reduce the overlapping region gradually and realize by the dosage profile that disposes each overlapping pattern.Therefore this method is difficult to adjust, when particularly the overlapping region is very narrow.
Therefore, need a kind of lithographic equipment and device making method, it has improved for the processing that exceeds exposure spot overlapping region.
Summary of the invention
According to one embodiment of present invention, provide a kind of lithographic equipment, described lithographic equipment comprises projection system, independent controllable array and data routing.Projection system is configured to the form of radiation beam with sub-radiation beam array projected on the substrate.The controllable array configurations becomes the antithetical phrase radiation beam to modulate separately.Described data routing comprises at least one data converting apparatus, described data converting apparatus is configured to will determine at least in part that the data-switching of required pattern becomes to be fit to the control signal of the independent controllable array of control, so that form required pattern practically on substrate.Described data converting apparatus is arranged to by the pseudo-inverting form of point spread function matrix being applied to represent the column vector of required pattern realizes described conversion.Described point spread function matrix comprises that about the shape of the point spread function of each spot and the information of relative position described spot was exposed on substrate by one of described sub-radiation beam in preset time.
According to another embodiment of the invention, propose a kind of device making method, said method comprising the steps of: the form of radiation beam with sub-radiation beam array projected on the substrate; Modulate sub-radiation beam with independent controllable array; And will determine that at least in part the data-switching of required pattern becomes to be fit to the control signal of the independent controllable array of control, so that on substrate, form required pattern practically.Described data-switching is to finish in the data converting apparatus in data routing.Described data-switching is by the pseudo-inverting form of point spread function matrix being applied to represent the column vector of required pattern realizes.Described point spread function matrix comprises that about the shape of the point spread function of each spot and the information of relative position described spot was exposed on substrate by one of sub-radiation beam in preset time.
Describe additional embodiments of the present invention, feature and advantage with reference to the accompanying drawings in detail, and the structure of various embodiments of the invention and operation.
Description of drawings
Comprise in this manual and constitute accompanying drawing graphic extension the present invention of this instructions part, and explain principle of the present invention, make this area professional person can make and use the present invention with instructions.
Fig. 1 describes the lithographic equipment of the embodiment of the invention.
Fig. 2 describes the spot grid side view partly of independent controllable array, microlens array and the formation of the embodiment of the invention.
The form of the spot grid that Fig. 3 describes to expose.
Fig. 4 describes the data converting apparatus in the data routing.
Now with reference to description of drawings the present invention.Same numeral is represented identical or functionally similar parts in the accompanying drawing.
Embodiment
Summary and term
Although this paper may mention the use of lithographic equipment in integrated circuit (IC) manufacturing especially, also other application can be arranged but should understand this civilian described lithographic equipment, for example the manufacturing of the guiding of DNA chip, MEMS (micro electro mechanical system) (MEMS), micro-optic Mechatronic Systems (MOEMS), integrated optics system and magnetic domain memory and check pattern, flat-panel monitor, thin-film head, slight fluidic device etc.The professional person will understand, and can select in the environment of applications term at these " wafer " or " tube core " and any use can be considered as respectively and the term of broad sense more " substrate " or " the target part " synonym.Here said substrate can be before and after exposure, track (for example, generally at resist coating layer on the substrate and with the instrument of the photoresist developing of exposure) or on tolerance or the instrument that detects processing.In the occasion that is suitable for, content disclosed herein also can be applicable to like this and other substrate processing instrument.And described substrate can for example when making multilayer IC, make term substrate used herein also can refer to comprise the substrate of a plurality of machined layer through above processing of a step.
Term used herein " independent controllable array " should be broadly interpreted as and refer to any such device: described device can be used for giving the incident radiation beam having the cross section of pattern, thereby can partly form required pattern in substrate target." light valve " and " spatial light modulator " and (SLM) term also can be used in such linguistic context.The example that this pattern forms device is discussed below.
Mirror array able to programme can comprise the matrix-addressable surface with viscoelasticity key-course and reflecting surface.The ultimate principle of this device is that for example reflecting surface addressing zone reflects incident light as diffraction light, and the addressing zone does not reflect incident light as non-diffracted light.
Use suitable spatial light filter, described light filter can the elimination diffraction light, stays non-diffracted light and arrives substrate.By this way, radiation beam according to matrix-addressable surface addressing pattern patterning.Will be understood that as a kind of selection scheme, described non-diffracted light can stay diffraction light and arrive substrate from the reflection radiation beam elimination.Diffraction light MEMS (micro electro mechanical system) (MEMS) device array also can use in the corresponding way.Each diffraction light MEMS device can comprise a plurality of zones of reflections that can relatively be out of shape mutually, constitutes the grating that reflects incident light as diffraction light.
Another alternative embodiment comprises the mirror array able to programme of the micro mirror that adopts arranged, by applying suitable localization electric field or using the piezoelectricity actuating unit that each micromirror is tilted with respect to axle separately.Minute surface is again a matrix-addressable, makes the addressing minute surface to be different from not by the radiation beam of the direction of addressing minute surface reflection incident, and reflection radiation beam just is patterned by the addressing pattern of matrix-addressable minute surface by this way.Needed matrix addressing can be carried out with suitable electronic installation.
In the above two kinds of cases, the controllable array can comprise one or more mirror arrays able to programme separately.Relevant mirror array more information can for example find among United States Patent (USP) 5,296,891 and 5,523,193 and PCT patented claim WO 98/38597 and the WO98/33096, and above-mentioned patent documentation is incorporated into the application by comprehensive reference.Also can use the Programmable LCD array.This example of structure is at United States Patent (USP) 5,229, provides in 872, and described patent is incorporated among the application by quote comprehensively.
Should understand, for example use characteristic precompile, optical proximity correction features, phase change technology and multistep exposure technique are on controllable array separately " demonstrations " pattern and one deck or the pattern on the substrate of transferring to substrate at last can differ widely.Similarly, the last pattern that forms may and not correspond at the formed pattern constantly of taking up an official post of controllable array separately on substrate.This may be such situation, and wherein the final pattern that forms on each part of substrate is to form in certain period or through after the exposure of given number of times, and the pattern on the controllable array and/or the relative position of substrate change separately in this process.
Term used herein " radiation " and " beam " contain various types of electromagnetic radiation, comprise ultraviolet (UV) radiation (for example wavelength X be about 408,355,365,248,193,157 or 126nm) and extreme ultraviolet (EUV) radiation (for example wavelength coverage is about 5-20nm) and particle radiation bundle, for example ionizing radiation bundle or electron irradiation bundle.
Used term in the literary composition " projection system " should be broadly interpreted as and contain all kinds projection system, comprise dioptric system, reflective optics and catadioptric optical system, as long as be suitable for for example employed exposing radiation or for example the use of immersion liquid or the use of vacuum wait other conditions.Term used herein " lens " can be considered as and the term of broad sense more " projection system " synonym.
Irradiation system also can comprise all kinds optics, comprises refraction, reflection and catadioptric optics, is used for guiding, shaping or the control of projection radiation bundle, these parts, for example " lens ", also can (as hereinafter mentioning) be that make up or single.
Lithographic equipment can be the type with two (twin-stages) or two above loadings (or substrate) platform (and/or two or more mask platform).This " multistage " worktable that increases in the machine can use concurrently,, carries out preparation process on one or more platforms that is, expose at one or more other simultaneously.
Lithographic equipment also can be this type: wherein substrate immerses the liquid (for example water) with high index, so liquid is injected into the last location of projection system and the space between the substrate.Immersion liquid also can be applied to other parts of lithographic equipment, between first element of mask for example able to programme (being controlled cell array) and projection system, and/or between first element and substrate of projection system.As everyone knows, immersion technique has been used to increase the numerical aperture of projection system in the prior art.
And lithographic equipment can be equipped with liquid handling box (cell), so that interact (for example selectively compound being added to the surface structure of revising substrate on the substrate or selectively) between each raying part of permission liquid and substrate.
Lithographic equipment
Fig. 1 schematically represents the lithographic projection apparatus 100 according to the embodiment of the invention.Equipment 100 comprises radiating system 102, independent controllable array 104, objective table 106 (for example substrate table) and projection system (" lens ") 108 at least.
Radiating system 102 can be used for providing radiation beam 110 (for example UV radiation), and radiating system also comprises radiation source 112 under specific circumstances.
Controllable array 104 (mirror array for example able to programme) can be used for pattern is added on the radiation beam 110 separately.In general, the position of controllable array 104 can be fixing with respect to projection system 108 separately.Yet in another structure, controllable array 104 can link to each other with locating device (not shown) separately, thereby array is accurately located with respect to projection system 108.As described here, controllable array 104 is reflection-type (reflective array that for example has independent controllable) separately.
Objective table 106 can be equipped with substrate holder (not illustrating specially) to fix substrate 114 (for example scribbling the silicon wafer or the glass substrate of photoresist), objective table 106 can link to each other with locating device 116, so that substrate 114 is accurately located with respect to projection system 108.
Projection system 108 (for example quartz and/or CaF
2The mirror-lens system or the minute surface system of lens combination or the lens unit made by these materials) can be used for being incident upon the target part 120 (for example one or more tube core) of substrate 114 from the radiation beam that beam splitter 118 receives with pattern.Projection system 108 can be incident upon the picture of independent controllable array 104 on the substrate 114.Perhaps, projection system 108 can throw the picture of secondary source, and the unit of controllable array 104 plays fast gate action separately for secondary source.With discussed in detail, projection system 108 also can comprise microlens array (MLA) as below, is used to constitute secondary source and little spot is incident upon substrate 114.
Source 112 (for example Nd:YAG laser instrument of frequency tripling) can produce radiation beam 122.Radiation beam 122 is injected irradiation system (irradiator) 124, injects after perhaps directly injecting or pass the regulating device 126 of radiation beam extender for example.Irradiator 124 can comprise regulating device 128, and the latter is used to set the convergent-divergent multiplying power of the spot size of regulating radiation beam 122.In addition, irradiator 124 generally comprises various other unit, for example spot generator 130 and condenser 132.For example, spot generator 130 can be (but being not limited to) refraction or diffraction grating, splitter mirror array, waveguide etc.Like this, the radiation beam 110 that is radiated on the independent controllable array 104 has required convergent-divergent multiplying power, spot size, uniformity coefficient and intensity distributions on its cross section.
Should be pointed out that source 112 can be contained in the shell of lithographic projection apparatus 100 among Fig. 1.In alternative embodiment, source 112 also can be away from lithographic projection apparatus 100.In this case, radiation beam 122 will be imported into equipment 100 (for example by suitable guiding minute surface).Should be pointed out that both of these case is all in limit of consideration of the present invention.
After utilizing beam splitter 118 guiding, radiation beam 110 is penetrated subsequently on independent controllable array 104.Radiation beam 110 is subjected to the reflection of independent controllable array 104, passes projection system 108, and projection system focuses on radiation beam 100 on the target part 120 of substrate 114.
By means of locating device 116 (with the optional interferometric measuring means on base 136 134, it receives the interference radiation beam 138 via beam splitter 140), substrate table 106 can accurately move, thereby different target part 120 is arranged on the path of radiation beam 110.During use, the locating device of controllable array 104 for example can be used for accurately revising the position of independent controllable array 104 with respect to radiation beam 100 paths when scanning separately.In general, moving by means of long stroke assembly (coarse positioning) and short stroke assembly (fine tuning location) of objective table 106 realizes that these two assemblies do not draw in Fig. 1.Similarly system also can be used for locating independent controllable array 104.Should be pointed out that with another kind of method/additionally, radiation beam 110 can be movably, and objective table 106 and/or independent controllable array 104 can have fixing position, relatively move to provide needed.
But in an arrangement of present embodiment, objective table 106 can be fixed, and substrate 114 is removable on objective table 106.If so, objective table 106 has many openings on its flat upper surface, and gas is sent into by opening, so that the air cushion that can support substrate 114 to be provided.Traditionally this is called gas supporting configuration.Utilization can be with substrate 114 with respect to the pinpoint one or more actuators in the path of radiation beam 110 (not shown), mobile substrate 114 on objective table 106.Perhaps, by starting and stop the circulation of gas selectively by opening, can be on objective table 106 mobile substrate 114.
Although lithographic equipment 100 of the present invention is described as the resist exposure that is used on the substrate here, should be pointed out that the present invention is not limited to this application, equipment 100 also can throw the projected bundle 110 with pattern in the photoetching of no photoresist.
Described equipment 100 can use in five kinds of modes:
1. optics substep repetitive mode: once (be single " flash of light ") whole pattern on the independent controllable array 104 is incident upon on the target part 120.Objective table 106 moves to diverse location along x and/or y direction, makes each target part 120 be had radiation beam 110 irradiations of pattern.
2. scan mode: except giving the part 120 that sets the goal is not at single " flash of light " in expose, repetitive mode is identical step by step with optics basically for other.Different is, separately controllable array 104 assigned direction (described " direction of scanning ", y direction for example) move with speed v, to scan independent controllable array 104, produce radiation beam 110 with pattern.Concurrently, objective table 106 moves with speed V=Mv (M is the magnification of projection system 108 in the formula) along equidirectional or reverse direction simultaneously.Like this, the target part 120 that can expose bigger, and do not damage resolution.
3. pulse mode: controllable array 104 keeps static basically separately, utilizes impulse radiation system 102 that whole pattern is incident upon on the target part 120 of substrate 114.Objective table 106 moves with the speed of substantial constant, makes the radiation beam 110 with pattern cross substrate 106 like this and carries out line sweep.Upgrading pattern on the independent controllable array 104 between the pulse of radiating system 102 on demand, and with the such timing of pulse, so that with target part 120 exposures of the order of desired location on the substrate 114.Therefore, the radiation beam 110 with pattern can cross substrate 114 scannings, so as with complete pattern exposure on a substrate 114.Repeat described process, exposed line by line until entire substrate 114.
4. continuous sweep mode: identical with pulse mode basically, difference is to use constant basically radiating system 102, and along with the projected bundle 110 with pattern crosses substrate 114 scanning and exposure substrate and upgrades pattern on the independent controllable array 104.
5. pixel grid imaging mode: the continuous exposure of the spot by the directive array 104 that formed by spot generator 130 is implemented in the pattern that substrate 114 forms.Described exposure spot has essentially identical shape.Printing is with the spot of a substrate 114 of form printing of grid substantially.In an example, the size of spot is bigger than the spacing of the pixel grid of printing, but little more a lot of than the spot grid of exposure.By changing the spot intensity of printing, just can obtain pattern.Can be in the intensity distributions that changes between the flash of light of exposure on the spot.
Also can use combination and/or the modification or the diverse mode of aforesaid way.
Imaging system
Fig. 2 illustrates according to an embodiment of the invention a kind of configuration of controllable array 104 separately.According to shown in configuration, with each unit group in the array 104 together with " super pixel " 10 form imaging.But, the scheme of single pixel imaging separately (not being with super pixel) still is within the scope of the present invention.Each (surpassing) pixel 10 produces sub-radiation beam 35, and described sub-radiation beam is by optical system 30, and described optical system 30 is reduced to by two simple lenses 31 and 32 to be formed, and disposes aperture diaphragm 33 between two lens.Described locational aperture diaphragm 33 is used to reduce arrive the level of the useless radiation of substrate 114.By after the optical system 30, the radiation of each (surpass) pixel 10 drops on the lenticule 15 in the microlens array 16, lenticule 15 with each individual sub-radiation beam 35 focus on substrate 114 surfaces regional area or " spot " (20a-20d) on.The Typical Disposition of super pixel 10 shown in the figure also comprises the square node of one 5 * 5 unit.Can control the intensity of in spot grid 20 each spot of glistening each time of incident laser by controlling the degree of tilt of forming the unit of each (surpassing) pixel 10 in the independent controllable array 104.
The interval of spot can have about 300 microns in spot grid 20, and these data are big more a lot of than typical critical dimension (CD) (tolerance of minimum imaging features), and described critical dimension is usually about 3 microns.Can realize the pattern of the bigger density of partial exposure (" the spot grid of exposure "), its method is: utilize the lasing light emitter of cyclic flashing and move substrate along direction of scanning Y, simultaneously, one of axle 22 that makes rectangle spot grid departs from a low-angle (see figure 3) with respect to scan axis Y.According to described embodiment, described laser configurations becomes the frequency flash of light with 50KHz, and substrate moves with per second 62.5mm speed.Described result is that partial exposure is spaced apart 1.25 microns on the Y direction.Interval on the directions X vertical with direction of scanning Y depends on the angle of spot grid with respect to scan axis Y.(value that these values and other embodiment provide all provides with example, without limits.)
Fig. 3 schematically illustrates the configuration of real-time snapshot that expression is configured on substrate 114 to produce the spot grid of homogenizing agent spirogram or pattern.Solid circles is represented the position of each spot in spot grid preset time, and empty circles represent the spot that the front is written into several times (be their expressions " the exposure spot ", be also referred to as in the exposure grid " partial exposure ").Though shown in legend do not have overlappingly in interesting areas, the intensity section of each spot is all overlapping with its neighborhood usually.Substrate 114 moves forward with respect to projection system 108 and spot grid along Y-axis among the figure, and described spot grid keeps and page fix.For clarity sake, axle 22 has been striden greatly with the angle of Y-axis, the angle that is used for working equipment can be little a lot (spot at interval 24 with spot at interval 26 ratio also will be accordingly big a lot of than shown in the example).Spot 20a is corresponding with the focused laser beam of same way as numbering with Fig. 2 to spot 20d, and with observed different along axis 22.
According to described configuration, the neighborhood spot of Y direction (for example, spot 41 and 42) is with relative intensive imaging interval time, and be to be separated by the cycle of laser beam (0.02ms) described interval time.On the other hand, the neighborhood spot of directions X (for example, spot 43 and 44) is with diverse imaging interval time.For example, being spaced apart under 320 microns the situation in the spot grid between the spot, the distance of exposure spot will need 256 flashes of light when being 1.25 microns, so that to the next neighborhood exposure on the directions X.
Fig. 4 has provided the relevant with it data routing structure explanation partly of the present invention.As mentioned above, control signal is sent to array 104 along data routing 70.The unit is set in data routing, so that (provide to have form illustrated usually by input media 400, for example based on the form of vector) user of lithographic equipment required dosage profile or radiation pattern are converted to signal, described signal will make array 104 produce required dosage figure on substrate 114.These unit comprise the data converting apparatus 50 that Fig. 4 illustrates, described data converting apparatus is configured to analyze the required pattern version of input traffic (comprise (section processes) usually), and the signal that needs exported to array 104 or the device of data streams before data stream sends array 104 to.The partial function of data converting apparatus 50 is included as each pixel (for example, described pixel can be determined) of required dosage figure and determines the degree which super pixel of array 104 need drive and drive on the dot grid relative with substrate 114.Described data converting apparatus 50 is the intensity of the sub-radiation beam of calculating optimum effectively, is used for carrying out on substrate 114 each partial exposure.Generate required dosage figure in overtime back by the partial exposure array then, described partial exposure array is to move on the surface of substrate 114 and produce with the spot grid.The process that best sub-radiation beam intensity is provided for array 104 is because of laser flash is complicated each time, each super pixel produces (inhomogeneous) on substrate irradiation area is bigger than the irradiation area of substrate grid cell, make that required sub-radiation beam intensity will depend on required dosage figure in the partial exposure peripheral region for partial exposure each time.
Required dosage figure can be expressed as the column vector that comprises the unit, and described column vector is illustrated in the required intensity of row on each grid position of substrate 114.With in the coordinate system of tolerance system with respect to their coordinate: x
MF, y
MFCan be defined in the position of the described grid among the required dosage figure.As mentioned above, can generate required dosage figure according to the exposure dot set that derives from super pixel in the array 104.All these spots all will have definite point spread function, describe the spatial coherence between the cross-sectional strength.In addition, will occur in the position of institute's spottiness of desired locations changing in the spot grid, described variation is that the scrambling by the microlens array that is used for spot is focused on causes.The shape of the point spread function of speckle displacement and spot can input to data converting apparatus 50 by correction data stage arrangement 52.
Process with the method composing images is called the pixel grid imaging.Described process comprises that the contribution by each spot in all possible grid position on the substrate 114 generates required dosage figure.On the mathematics, required dosage figure equals the point spread function sum that institute's spot desirable strength that might expose on each exposure spot multiply by each spot that exposes.It can be in order to following The Representation Equation:
Wherein, I
nThe intensity of the single exposure spot that expression exposure spot n is required, PSF
n((x
MF-x
n), (y
MF-y
n)) expression point spread function (the position x of exposure spot n
MF, y
MFOn intensity contribution), x
nAnd y
nThe position of representing single exposure spot, and D (x
MF, y
MF) expression required dosage figure.
The problem that data converting apparatus 50 will solve has: the information (providing) of given required dosage figure and point spread function as correction data, and how much be intensity that need offer the single exposure spot of the accurate as far as possible required dosage figure of image?
Above-mentioned equation can be write conduct with vector form:
[D]＝[K]·[I]
Wherein column vector [D] is represented the required dosage figure of discrete (promptly stipulating) on concrete substrate grid position, the intensity of the single exposure spot of column vector [I] expression, and the discrete point spread function of matrix [K] expression.
Matrix [K] comprises the point spread function (position and shape) about every single exposure spot.Therefore, according to the present invention, need following information so that produce matrix [K]:
1) sweep velocity/laser-gated pulsed frequency;
2) position of microlens array spot;
3) shape of microlens array point spread function; And
4) microlens array is with respect to the position of rotation of substrate direction of scanning (Y-axis).
In order to address the above problem, data converting apparatus 50 is configured to determine the intensity of single exposure spot, makes [D]-[K] [I] minimum.Need carry out normalization in order to estimate this minimum value.Because described method is applicable to that pipeline environment (for example, not all exposure spot reads to write simultaneously substrate) the fact and MLA spot be used to print the fact of many exposure spots (utilizing many different laser pulses), just need to use general normalization, in described normalization, can not use the concrete knowledge of required pattern.Can be combined on the application of principle of these concrete knowledge, still will increase the cost of equipment.
Like this, least square method can be suitable for, and the problem that is solved by data converting apparatus 50 can be expressed as:
Have several method can be used to find the solution universal least square method problem:
1) method of geometry is utilized Jacobians (a kind of process of iteration) method etc.;
2) algebraic approach utilizes alternative manner (for example Gauss-Seidel); And
3) algebraic approach utilizes direct method (for example the Gauss-Jordan method is utilized inverse matrix).
The method that present embodiment uses belongs to the 3rd class.With respect to the iteration of need selecting and effective in real time least square fitting of realizing, the advantage that this method has faster (in case determining the inverting matrix).In addition, it shows the performance of determining: have predictable convergence and faster speed under various conditions.Opposite iterative scheme usually can not predict accurately how long it needs in order to solve convergence problem in acceptable extent of the error.And, for this method of avoiding reusing intermediate result, the problem that the rounds off minimum that causes by the limited wordlength of hardware in the data routing.At last, can off line in big word length territory (for example floating-point territory), carry out owing to prepare dyscalculia (for example, inverse matrix etc.), rather than (when data routing is handled mass data) has to realize extra computation in the actual imaging process.
The problem that present embodiment is faced is that matrix [K] is not a square formation.Its size is determined by the number of exposure spot n and discrete net point number, stipulated required dosage figure (length of column vector [D]) in net point.Like this, just can not utilize the inverting of standard mathematical method compute matrix [K].But can be by calculating " pseudo-inverting " realize (and for example see " LinearAlgebra and its Application ", the third edition, Gilbert Strang, pages 449 and 450, foregoing by comprehensively with reference to and in conjunction with in this application).In the following description, pseudo-inverting is represented as [K]
+For example can use the pseudo-inverting of Moore-Penrose definition, but also can use the definition of other simulation.Be elaborated below.
The inverting of Moore-Penrose matrix is called " matrix 1-inverting " the general type of pseudo-inverting in special circumstances.Be sometimes referred to as " general inverting ", or abbreviate as " pseudo-inverting ".The Moore-Penrose inverting [K] of matrix [K]
+Should satisfy following relation:
[K][K]
+[K]＝[K]，
[K]
+[K][K]
+＝[K]
+，
([K] [K]
+)
T=[K] [K]
+, and
([K]
+[K])
T＝[K]
+[K]。
The shortest the separating of least square method of problem [D]=[K] [I] (is expressed as
Above seeing) can be write as following form: [I]=[K]
+[D].
(if [K]
T[K]) inverting have so pseudo-inverting [K]
+Just can be expressed as:
[K]
+＝([K]
T[K]
-1[K]
T，
Wherein [K]
TBe transpose of a matrix.This can be by multiply by [K] on the both sides of equation [D]=[K] [I]
TGenerate square formation ([K]
T[K]) illustrate that described square formation is carried out inverting can be obtained:
[I]＝([K]
T[K])
-1[K]
T·[D]≡[K]
+·[D].
The zlasing mode that the embodiment of the invention is used is TEM
00, described pattern has provided the intensity profile map of Gauss shape, and described sectional view is maintained to by optical system until the entire path of substrate 114.But also can use other zlasing mode and intensity profile map.Continuous intensity pattern has overlapping adjacent exposure spot to realize by being arranged in slightly.As mentioned above, Zui Xiao exposure spot is spaced apart 1.25 microns according to one embodiment of present invention, and its Gaussian standard deviation is 0.75 micron.In the row (along determining with the most approaching parallel spot grid axle of the substrate of direction of scanning Y) of the spot grid relevant with given optical column, directions X (vertical with the direction of scanning Y of substrate) is gone up degree overlapping between the exposure spot can be by changing around the anglec of rotation control of the optical column of the axle parallel with the optic axis of projection system 108.But the area extension of the first row imaging of the feature of required dosage figure along directions X from the spot grid is to second imaging region of going from the spot grid, overlapping being controlled in the required scope between the pattern that can not be again each row be produced with mechanical mode is so that at the uniform dosage profile of the region generating of tie point.Therefore, need the spot grid each the row pattern all " stitching " together so that produce the method for uniform dosage profile.Owing to sewing up is the pattern that produces with the different piece that connects same optical column, thereby this stitching is called " the interior stitching of row ".
" inner array stitching " need expand to pattern by the second optical column imaging region from the first optical column imaging region.In above-mentioned stitching, overlapping can appearing at obviously than between the wider exposure spot of nominal range.When just occurring the third correlation circumstance when exposure intensity slows down the substrate sweep velocity artificially in order to increase.The wherein overlapping increase of exposure spot on the direction of scanning (for example laser frequency keeps constant).
When reaching given required dosage figure and calculate the intensity of required exposure spot, increasing the overlapping above-mentioned example of exposure spot will go wrong.Specifically, according to the pseudo-inverting of embodiments of the invention use point spread function, exposure spot very close to each other will be derived singular matrix [K], will obtain numerical instability when calculating pseudo-inverting.This can have a negative impact to the validity and the reliability of data converting means 50.
Under the situation about sewing up in row, instability problem can be observed significantly, that is, two exposure spots that have the identical point spread function are overlapping fully.This situation causes matrix [K] two row identical, this means matrix be unusual and can not inverting (minimum singular value is that the 0-singular value is determined by reference svd (SVD) method; See " Digital ImageProcessing ", by Kenneth R.Castleman, page 642, above-mentioned document is incorporated into the application by comprehensive reference).Very will derive very little singular value and high singular matrix near the exposure spot of (but not having accurately overlapping).A kind of actual influence of described numerical instability is and need provides big dynamic range to hardware that so that carry out accurate numerical evaluation, the changes in amplitude of described numerical value is very big.If relevant numerical value is very approaching in size, then calculates and to realize more effectively.Can be for the scope under the set matrix situation of giving by being called with matrix correlation " the condition numeral " to measure, how unusual matrix has provided relevant matrix is information.The condition numeral is defined as maximum singular value λ
MaxSingular value λ with minimum
MinRatio.
As mentioned above, for sewing up in the row, people are concerned about overlapping stitching between the two row exposure spots in the optical column usually.In the worst case, the overlapping region between the spot mesh row may diminish to 4 exposure spots.Overlapping quantity is determined by the position, angle of microlens array, the position, angle of objective table 106 and the site error of single spot.Can use the mode that phases down (wherein in principle, the intensity of each overline reduces gradually on the overlapping region), but in fact because the section that phases down is very many with respect to the point spread function inclination, the overlapping region will comprise that few like this exposure spot also is very difficult.In this case, avoid producing big error is very difficult (if perhaps these errors be reduced to that I haven't seen you for ages obviously increase manufacturing cost).Why Here it is regards that phasing down present embodiment provides the main cause of low resolution as.
Handle a large amount of exposure spot overlap problems and can use three kinds of methods.
At first, additional balance equation can be added to before it is as the additional row conversion in the matrix [K], and described row comprises from the inverting matrix that obtains removes balance equation.Two exposures of the additional enforcement that comprises spot can combine with the weight that adds to each effectively.
The second, the overlapping region that the less nuclear relevant with each optical column (being independent pseudo-inverting matrix) is sewed up between they are used to be listed as is sewn to together by the intensity contribution that phases down each relevant in overlapping region optical column.
The 3rd, as what below will describe in detail, svd (SVD) method can be used for matrix [K] is decomposed into the eigenvector and the singular value of quadrature before inverse matrix.In case with described method exposure/discriminating, described little singular value (described singular value is that numerical problem causes) can be removed, and refutation process is realized effectively.The little singular value that is eliminated can be that for example amplitude is less than the singular value (for example, range value is than 10% of maximum singular value amplitude also little singular value) of threshold amplitude.Its result is the processing overlapping zone more effectively, has also accelerated the speed of real-time implementation least square fitting.Two effect improvings the performance of lithographic equipment.
The exposure spot is handled in the application of balance equation effectively, and described exposure spot is close together as the exposure spot with separation of the weight that reduces or is overlapping.For example, two accurate overlapping exposure spots can split into the exposure spot of separation, and these exposure spots are on slightly different position, and radiation intensity has reduced by 50% (also can select other relevant weight).It's a pity and some spinoffs to occur in this way.Perhaps the most important thing is to be connection with the fact that the novel entities of representing with the exposure spot of two separation and weighting no longer resembles has identical spatial intensity distribution (having changed point spread function effectively) the single exposure spot in these problems.Owing to do not have appropriate consideration that required dosage figure is transformed into the signal that is applied to independent controllable array, and because this calculating depends on the single exposure spot that how much has some identical point spread functions, this unusual characteristic will cause error.
In general, balance equation will play a part to link together with adjacent exposure spot intensity, and generate big effective exposure spot and/or expand effective exposure spot with anisotropic mode.A result of this respect is that the intensity of such exposure spot will need to consider than the required wider dosage profile of common exposure spot.
The SVD method can not produce and identical problem discussed above, and can be used to be listed as and sew up between interior stitching, row that (wherein large matrix [K] is used to represent two or more optical columns, and one of them thinks overlapping by between the optical column of same matrix representation), and increase by reducing the overlapping of Y direction that sweep velocity causes.
The method of ignoring little singular value is better than other method on processing MURA problem.MURA as the specific question in the flat panel display applications is a significant disadvantages, and described shortcoming is owing to the viewing area is determined to occur than other zone is easier.Because the high strength of given area exposure spot allows required dosage figure to reach higher precision, described shortcoming can appear under the stitching situation, or appears under the situation of the spot spacing that reduces in the direction of scanning that slow scanning causes to expose.For example under the situation about sewing up in row, per about 300 microns (corresponding with spot grid repeat distance) just can find the exposure spot consistency of such increase usually.The cyclical variation that obtains in the resolution of dosage profile can be clearly.The method of ignoring little singular value has the effect of the exposure spot intensity that keeps more constant on the substrate, thereby has avoided the MURA phenomenon.Another advantage of described method is that it is low based on the sensitivity of the method that phases down to the remolding sensitivity that moves in the position, angle of optical column.
The problem of sewing up between row is different with the problem of stitching in the row, and the overlapping region in sewing up between row is a lot of greatly.Typical overlapping can be widely greater than 1mm, described spacing is corresponding with about 800 spots that expose.Thereby under the situation of the same precision problem that does not occur running into, to be used for the row inseam fashionable if phase down, and phases down in the middle of the pattern that can be used for being produced by the different optical row.But be to use [K]
+This situation of method particularly suitable of direct matrix inverting.This be because matrix [K] not as a whole (in conjunction with all optical columns) but utilized very little nuclear (one of each optical column, they constitute matrix [K]) to calculate by inverting.These are less endorses with inverting and be stitched together (utilizing phasing down of overlapping region) seriatim, so that obtain being sewn matrix [K]
Tapered +.
Described method also has such advantage, is not needing for each optical column produces under the situation of inverting matrix again, and (along X and Y) little moving can be proofreaied and correct between two optical columns.Different is, described correction can be set up and is used to determine the function that phases down.Described correction can be applied to for example spatial alternation algorithm, conversion between the pattern coordinate system of design and the pattern coordinate system of exposure (that is, the parameter set that provides from objective table calibration system/control system derive scanning moving coordinate system) is provided described algorithm.Structure according to the spatial alternation algorithm can be configured to provide each the less nuclear that has required dosage figure [D], and described required dosage figure will aim at computing grid, and described computing grid is used for generation and is used for optical column collection [K]
Tapered +Inverting phase down matrix.
Another problem relevant with stitching is the sign about seam area in the exposing patterns.As above said, use the pixel grid imaging, the exposing patterns on the substrate 114 is set up in overtime back, makes the exposure spot of ignoring usually with different time exposures.Because the pattern that it may not know projection printing where, so described scheme is difficult to differentiate is sewed up the area of the pattern that influences.This has just produced a problem,, when assesses the validity of sewing up strategy that is, more generally says so and when assesses the picture quality of the pattern that writes substrate.
Can solve this problem by near the place that will realize sewing up, disconnecting concrete pixel.Owing to sew up is because of (for sewing up between stitching in the row and row) appears in hardware characteristics, so the pixel of selecting is easy to differentiate.The intentional introducing of dead pixel causes on exposing patterns forming along the direction of scanning parallel fine rule, and these parallel lines can be used to represent the suture location of scanning area.For example, can select to show and sew up between row, can be used for stitching between the expression row near the pixel at optical column edge separately near the terminal pixel of given row in the spot grid (row of Que Dinging, along the axle of the spot grid the most parallel) before with direction of scanning Y.This mark of seam area can with activate independent controllable array, rather than carry out in the hardware relevant with the structure division of data routing.Because realize especially easily, thus straight parallel lines provided as an example, but can be with hardware programming so that provide other marker characteristic (for example dotted line) so that the place that the expression appearance is sewed up.
Conclusion
Though more than described various embodiment of the present invention, should be appreciated that just and introduce these embodiment by way of example, be not construed as limiting.The professional and technical personnel is obviously clear can be made the variation on form and the details and not to break away from the spirit and scope of the present invention.Therefore, range of the present invention and scope should not be subjected to the restriction of above-mentioned any one exemplary embodiment, and should determine according to accompanying claims and equivalent thereof.
Describing part in detail mainly is to be used for explaining claims.Summary and summary part are described one or more, but can not be all one exemplary embodiment of the present invention that the inventor considers, thereby are not confined to the scope of claims.
Claims (10)
1. lithographic equipment, it comprises:
Projection system, it is configured to the form of radiation beam with sub-radiation beam array projected on the substrate;
Independent controllable array, it is configured to modulate described sub-radiation beam; And
The data routing that comprises at least one data converting apparatus, described at least one data converting apparatus is configured to will determine at least in part that the data-switching of required pattern becomes to be fit to the control signal of the described independent controllable array of control, so that on described substrate, become described required pattern practically
Wherein, described at least one data converting apparatus is configured to be applied to represent that by the pseudo-inverting form with the point spread function matrix column vector of described required pattern realizes described conversion, described point spread function matrix comprises the shape of point spread function of relevant spot and the information of relative position, and described spot was exposed on substrate by one of described sub-radiation beam in preset time.
2. lithographic equipment as claimed in claim 1, wherein, described pseudo-inverting matrix has the form that the svd by described point spread function matrix obtains.
3. lithographic equipment as claimed in claim 2, wherein, in the front-seat singular value of removing amplitude less than the described point spread function of threshold amplitude of inverting.
4. lithographic equipment as claimed in claim 3, wherein, described threshold amplitude approximates 50% of maximum singular value amplitude.
5. lithographic equipment as claimed in claim 1, wherein, described column vector is illustrated in the described required pattern that a plurality of grid positions are determined on the described substrate.
6. device making method, it comprises:
The form of radiation beam with sub-radiation beam array projected on the substrate;
Modulate described sub-radiation beam with independent controllable array; And
The data-switching that to determine required pattern in the data converting apparatus on data routing at least in part becomes to be suitable for controlling the control signal of described independent controllable array, so that on described substrate, form described required pattern practically,
Wherein, carry out the described operation that data to small part is converted to the column vector of the described required pattern of expression by the pseudo-inverting form of point of application spread function matrix, described point spread function matrix comprises the shape of point spread function of relevant spot and the information of relative position, described spot preset time by the exposure of one of described sub-radiation beam on described substrate.
7. device making method as claimed in claim 6, wherein pseudo-inverting matrix obtains by following steps:
Utilize singular value decomposition method decomposition point spread function matrix and obtain singular value; And
Obtain the pseudo-inverting form of point spread function matrix according to the point spread function matrix of described decomposition.
8. device making method as claimed in claim 7, wherein, the eliminating amplitude is less than the singular value of the point spread function matrix of threshold amplitude before inverting.
9. device making method as claimed in claim 8, wherein, described threshold amplitude approximate maximum singular value amplitude 10%.
10. device making method as claimed in claim 1, wherein, described column vector is illustrated in the described required pattern that a plurality of grid positions are determined on the described substrate.
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|---|---|---|---|
| US11/020642 | 2004-12-27 | ||
| US11/020,642 US7126672B2 (en) | 2004-12-27 | 2004-12-27 | Lithographic apparatus and device manufacturing method |
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| CN100524030C CN100524030C (en) | 2009-08-05 |
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|---|---|
| US (2) | US7126672B2 (en) |
| EP (1) | EP1674934B1 (en) |
| JP (1) | JP4223036B2 (en) |
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| CN (1) | CN100524030C (en) |
| DE (1) | DE602005007563D1 (en) |
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| CN103946750B (en) * | 2011-11-29 | 2019-03-29 | Asml荷兰有限公司 | Lithographic equipment, device making method and computer program |
| CN103293871A (en) * | 2012-03-01 | 2013-09-11 | 台湾积体电路制造股份有限公司 | Non-directional dithering methods |
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| JP4223036B2 (en) | 2009-02-12 |
| DE602005007563D1 (en) | 2008-07-31 |
| US7126672B2 (en) | 2006-10-24 |
| EP1674934B1 (en) | 2008-06-18 |
| KR20060074870A (en) | 2006-07-03 |
| JP2006186364A (en) | 2006-07-13 |
| EP1674934A1 (en) | 2006-06-28 |
| US20070030470A1 (en) | 2007-02-08 |
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